JP2006042146A - 固体撮像装置及び固体撮像装置の動作方法 - Google Patents
固体撮像装置及び固体撮像装置の動作方法 Download PDFInfo
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- JP2006042146A JP2006042146A JP2004221783A JP2004221783A JP2006042146A JP 2006042146 A JP2006042146 A JP 2006042146A JP 2004221783 A JP2004221783 A JP 2004221783A JP 2004221783 A JP2004221783 A JP 2004221783A JP 2006042146 A JP2006042146 A JP 2006042146A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims description 24
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- 238000010586 diagram Methods 0.000 description 18
- 230000005484 gravity Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 7
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- 230000007423 decrease Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
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- 238000003491 array Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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Abstract
【解決手段】 固体撮像装置は、2次元状に配列される多数の画素と、前記各画素に対応して配列される複数色のカラーフィルタであって、少なくとも解像度を決定する主たる色において、水平或いは垂直方向に隣接する2画素に対応する色が同一となるように配列されるカラーフィルタとを有する。少なくとも解像度を決定する主たる色に対応する巣水平方向に隣接する2画素の信号を加算するに際して、該加算の空間的組み合わせを加算後の隣接する水平ライン間で空間位相が180度異なるように加算する。
【選択図】 図2
Description
垂直電荷転送装置214は、図示しない垂直転送チャネルと該垂直転送チャネル上方に、絶縁膜(図示せず)を挟んで形成される転送電極が光電変換素子212の間隙を蛇行するように水平方向に形成されている。
Claims (8)
- 2次元状に配列される多数の画素と、
前記各画素に対応して配列される複数色のカラーフィルタであって、少なくとも解像度を決定する主たる色において、水平或いは垂直方向に隣接する2画素に対応する色が同一となるように配列されるカラーフィルタと
を有する固体撮像装置。 - 前記カラーフィルタの配列は、水平或いは垂直方向に隣接する2画素に対応する色が同一である請求項1記載の固体撮像装置。
- 前記複数色のカラーフィルタは、緑色カラーフィルタと赤色カラーフィルタと青色カラーフィルタとを含み、
前記緑色のカラーフィルタは、正方或いは直方格子点上に配置され、
前記赤色カラーフィルタと青色カラーフィルタは、水平方向に2つ一組で交互に配列されるとともに、緑色のカラーフィルタに対して、空間位相が180度異なる請求項1又は2記載の固体撮像装置。 - 前記複数色のカラーフィルタは、緑色カラーフィルタと赤色カラーフィルタと青色カラーフィルタとを含み、
前記緑色のカラーフィルタは、正方或いは直方格子点上に配置され、
前記赤色カラーフィルタと青色カラーフィルタは、緑色のカラーフィルタで形成される水平ライン間に交互にライン状に配列されるとともに、緑色のカラーフィルタに対して、空間位相が180度異なる請求項1〜3のいずれか1項に記載の固体撮像装置。 - 少なくとも解像度を決定する主たる色に対応する水平方向に隣接する2画素の信号を加算するに際して、該加算の空間的組み合わせを加算後の隣接する水平ライン間で空間位相が180度異なるように加算する請求項1〜4のいずれか1項に記載の固体撮像装置の動作方法。
- 4画素加算を行う際には、水平及び垂直方向に隣接する同一色のカラーフィルタに対応する4画素を加算する請求項5記載の固体撮像装置の動作方法。
- 4画素加算を行う際には、水平及び垂直方向に隣接する同一色のカラーフィルタに対応する4画素を加算し、少なくとも解像度を決定する主たる色において該加算の加算重心が加算後の水平ラインごとに空間位相が互いに180度異なる請求項5記載の固体撮像装置の動作方法。
- 標準撮影状態或いは暗いシーンの撮影時には、画素を加算して出力し、特別に解像度を必要とする場合には、全画素を独立して出力する請求項1〜7のいずれか1項に記載の固体撮像装置の動作方法。
Priority Applications (2)
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JP2004221783A JP4587450B2 (ja) | 2004-07-29 | 2004-07-29 | 固体撮像装置 |
US11/191,002 US7465910B2 (en) | 2004-07-29 | 2005-07-28 | Solid state imaging device with increased vertical and horizontal resolutions in interlace scanning method |
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JP2004221783A JP4587450B2 (ja) | 2004-07-29 | 2004-07-29 | 固体撮像装置 |
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JP2004221783A Expired - Fee Related JP4587450B2 (ja) | 2004-07-29 | 2004-07-29 | 固体撮像装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015049402A (ja) * | 2013-09-02 | 2015-03-16 | キヤノン株式会社 | 焦点ずれ量検出装置およびその制御方法、撮像装置 |
CN107529046A (zh) * | 2017-02-23 | 2017-12-29 | 深圳安芯微电子有限公司 | 一种色彩滤镜阵列及图像传感器 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5183880B2 (ja) * | 2006-03-14 | 2013-04-17 | ソニー株式会社 | カラーフィルタおよび撮像素子 |
JP2008104013A (ja) * | 2006-10-19 | 2008-05-01 | Fujifilm Corp | 固体撮像素子の駆動方法及び撮像装置。 |
CN104012085B (zh) * | 2011-12-27 | 2016-06-29 | 富士胶片株式会社 | 彩色摄像元件 |
Citations (5)
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JP2000023171A (ja) * | 1998-06-30 | 2000-01-21 | Nikon Corp | 撮像装置 |
JP2002010276A (ja) * | 2000-06-22 | 2002-01-11 | Olympus Optical Co Ltd | 撮像装置 |
WO2002085002A1 (fr) * | 2001-04-12 | 2002-10-24 | Nikon Corporation | Capteur d'images a semi-conducteurs |
JP2003078919A (ja) * | 2001-09-06 | 2003-03-14 | Fuji Film Microdevices Co Ltd | 撮像装置 |
JP2003299112A (ja) * | 2002-03-29 | 2003-10-17 | Fuji Photo Film Co Ltd | デジタルカメラ |
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FR2522235B1 (fr) * | 1982-02-19 | 1986-02-21 | Thomson Brandt | Camera de television en couleurs comportant un filtre matriciel trichrome |
US5150204A (en) * | 1988-04-27 | 1992-09-22 | Canon Kabushiki Kaisha | Solid state image pickup having plural pixels arranged on plural lines |
US4876590A (en) * | 1988-06-17 | 1989-10-24 | Eastman Kodak Company | Low resolution verifier for a still video image |
US5374956A (en) * | 1992-05-29 | 1994-12-20 | Eastman Kodak Company | Electronic imaging apparatus with dithered color filter array |
JP2891880B2 (ja) * | 1994-08-31 | 1999-05-17 | 日本電気株式会社 | 固体撮像装置 |
JP3551571B2 (ja) * | 1995-08-11 | 2004-08-11 | ソニー株式会社 | カラーccd固体撮像素子 |
US5956086A (en) * | 1995-10-06 | 1999-09-21 | Asahi Kogaku Kogyo Kabushiki Kaisha | Image indicating device and imaging device |
JP3724882B2 (ja) * | 1996-08-14 | 2005-12-07 | シャープ株式会社 | カラー固体撮像装置 |
JP3830590B2 (ja) | 1996-10-30 | 2006-10-04 | 株式会社東芝 | 固体撮像装置 |
JP3459738B2 (ja) * | 1996-12-20 | 2003-10-27 | キヤノン株式会社 | 撮像装置 |
US6999119B1 (en) * | 1998-04-10 | 2006-02-14 | Nikon Corporation | Image-capturing element, image-capturing circuit for processing signal from image-capturing element, image-capturing device, driving method of image-capturing element |
US6992714B1 (en) * | 1999-05-31 | 2006-01-31 | Canon Kabushiki Kaisha | Image pickup apparatus having plural pixels arranged two-dimensionally, and selective addition of different pixel color signals to control spatial color arrangement |
JP4497688B2 (ja) * | 1999-09-27 | 2010-07-07 | 富士フイルム株式会社 | 固体撮像装置 |
JP3636291B2 (ja) * | 2000-01-31 | 2005-04-06 | オリンパス株式会社 | 撮像装置 |
-
2004
- 2004-07-29 JP JP2004221783A patent/JP4587450B2/ja not_active Expired - Fee Related
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- 2005-07-28 US US11/191,002 patent/US7465910B2/en not_active Expired - Fee Related
Patent Citations (5)
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JP2000023171A (ja) * | 1998-06-30 | 2000-01-21 | Nikon Corp | 撮像装置 |
JP2002010276A (ja) * | 2000-06-22 | 2002-01-11 | Olympus Optical Co Ltd | 撮像装置 |
WO2002085002A1 (fr) * | 2001-04-12 | 2002-10-24 | Nikon Corporation | Capteur d'images a semi-conducteurs |
JP2003078919A (ja) * | 2001-09-06 | 2003-03-14 | Fuji Film Microdevices Co Ltd | 撮像装置 |
JP2003299112A (ja) * | 2002-03-29 | 2003-10-17 | Fuji Photo Film Co Ltd | デジタルカメラ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015049402A (ja) * | 2013-09-02 | 2015-03-16 | キヤノン株式会社 | 焦点ずれ量検出装置およびその制御方法、撮像装置 |
CN107529046A (zh) * | 2017-02-23 | 2017-12-29 | 深圳安芯微电子有限公司 | 一种色彩滤镜阵列及图像传感器 |
CN107529046B (zh) * | 2017-02-23 | 2024-03-08 | 思特威(深圳)电子科技有限公司 | 一种色彩滤镜阵列及图像传感器 |
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JP4587450B2 (ja) | 2010-11-24 |
US7465910B2 (en) | 2008-12-16 |
US20060022117A1 (en) | 2006-02-02 |
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