JP2006019396A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To cope with the enlargement of a substrate efficiently and reasonably in a substrate processing device which supplies to or applies a processing solution on the processing substrate performed by a nonspinning method. <P>SOLUTION: This resist application unit (CT) 82 has a stage 112 which extends lengthwise in the direction of process line A (X direction). A substrate G on this stage 112 is floated by air pressure from a rocket engine jets 120 on this stage 112 and conveyed in a flat line in this direction (X direction). From the fixed type of a resist nozzle 114 arranged in the upper part of the stage 112, resist liquid is supplied on the substrate G so that a resist coating film may be formed in the substrate upper surface by fixed film thickness. With respect to each rocket engine jet 120 belonging to a carrying-in and a carrying-out areas of the both ends of the stage 112, the rocket engine jets (flow rate switching directional control valve) are arranged inside the stage 112 for switching individually and automatically the relative positional relationship with substrate G about the amount of outflows of air. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a technique for supplying a processing liquid onto a substrate to be processed, and more particularly to a substrate processing apparatus for supplying a processing liquid onto a substrate in a spinless manner.

  Recently, in a photolithography process in a flat panel display (FPD) manufacturing process, as a resist coating method that is advantageous for increasing the size of a substrate to be processed (for example, a glass substrate), a resist solution is continuously applied to the substrate with a small diameter from a resist nozzle. A spinless method in which a resist solution is applied with a desired film thickness on a substrate without requiring a rotational movement by relatively moving, that is, scanning, a resist nozzle while being discharged is widely used.

A conventional resist coating apparatus using a spinless method is, for example, as described in Patent Document 1, a micrometer of several hundred μm or less between a substrate placed horizontally on a mounting table or a stage and a discharge port of a resist nozzle. A gap is set and the resist solution is discharged onto the substrate while moving the resist nozzle above the substrate in the scanning direction (generally in the horizontal direction perpendicular to the longitudinal direction of the nozzle). This type of resist nozzle has a discharge port with a very small diameter (for example, about 100 μm), and is configured to discharge the resist solution at a considerably high pressure. It is formed in a horizontally long or long shape, and fine-diameter discharge ports are arranged in a porous structure with a constant pitch in the longitudinal direction, or a continuous slit structure is formed.
JP-A-10-156255

  However, in the spinless type resist coating apparatus as described above, since the size and weight of the long resist nozzle increase as the substrate size increases, such a heavy and long resist nozzle is positioned above the stage. It has become difficult to stably move horizontally at a constant speed while keeping the (narrow gap) constant. At present, the increase in the size and performance of the nozzle scanning mechanism is supported by the increase in the size of the substrate and the nozzle, but the limit is almost reached.

  The present invention has been made in view of the above-described problems of the prior art, and is a substrate that can easily and efficiently cope with an increase in size of the substrate when supplying or coating a processing liquid on the substrate to be processed by a spinless method. An object is to provide a processing apparatus.

  In order to achieve the above object, the substrate processing apparatus of the present invention has a number of jet holes on the upper surface of the stage, and a stage that floats the substrate to be processed to a desired height by the pressure of the gas jetted from the jet holes, A substrate transport unit that moves the substrate floating on the stage in a predetermined direction; a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate above the stage; and a predetermined region of the stage Each of the jet outlets to which the nozzle belongs belongs to a jet control unit that switches a gas jet flow rate depending on whether or not the substrate is closer than a predetermined distance and above the jet outlet.

  In the above configuration, the substrate is floated in the air by the pressure of the gas (for example, compressed air) ejected from the jet nozzle on the upper surface of the stage and transported by the substrate transport unit, and the processing liquid is supplied from the processing liquid supply unit onto the substrate during transport. By supplying, the processing liquid can be applied to the entire upper surface of the substrate or a desired part. The flow rate of the gas ejected from each ejection port on the upper surface of the stage is switched to a large flow rate when the substrate is approaching upward by the function of the ejection control unit, and is switched to a small flow rate when the substrate leaves the top.

  According to a preferred aspect of the present invention, the ejection control unit has a valve chamber having an outlet communicating with the ejection outlet formed in the stage and an inlet opposed to the outlet, and gas from the inlet to the valve chamber. A gas supply unit that is movably provided in the valve chamber and is displaced according to the difference between the pressure on the inlet side and the pressure on the outlet side, and the substrate has a predetermined distance above the ejection port. The valve body is displaced to the first position close to the inlet in the valve chamber to increase the flow rate of the gas discharged from the outlet to the outlet, and the substrate is located above the outlet. Or the valve body is displaced to a second position close to the outlet in the valve chamber to limit the flow rate of the gas discharged from the outlet to the jet outlet. In such a configuration, a flow rate switching valve is formed by the valve chamber and the valve body, and the gas ejection flow rate of the corresponding ejection port is set to the substrate by the automatic switching operation according to the ambient pressure of the flow rate switching valve. It can be switched individually and automatically in relative positional relationship, and gas consumption can be minimized.

  In this case, a configuration in which a valve seat is provided near the outlet in the valve chamber and the valve body is in close contact with the valve seat at the first position is preferable. Further, it is preferable that a gap is formed between the valve body and the valve seat so that compressed air is leaked to the ejection port side while the valve body is in close contact with the valve seat. In addition, the outlet and the inlet face in the vertical direction in the valve chamber, and the valve body is provided so as to be movable in the vertical direction in the valve chamber, depending on the vertical upward force corresponding to the pressure on the inlet side and the pressure on the outlet side. It is preferable to receive a vertical downward force. For example, the valve chamber preferably has a spherical inner wall or a cylindrical inner wall. The sphere is preferably in the shape of, for example, a sphere, a cylinder, a disk, or a cone. Alternatively, the valve body has a base end portion fixed to the side wall of the valve chamber and a movable portion extending from the base end portion into the valve chamber, and the movable portion is in the first position with the base end portion as a fulcrum. And a configuration that is displaced between the second position and the second position. A gas flow path for supplying gas from a gas supply source to the valve chamber may be provided inside the stage.

  In another preferred embodiment, the ejection control unit divides the ejection ports on the stage into a plurality of groups at a predetermined pitch in the direction in which the substrate moves, and each group is connected via an individual on-off valve. When a gas is supplied and a substrate is above each set of jets, the on-off valve corresponding to the set is opened, and when there is no substrate above each set of jets, the open / close corresponding to the set is opened. The structure which makes a valve a closed state may be sufficient. In this case, preferably, each set of jet outlets on the stage is arranged in a row (or more than two rows are possible) in a direction orthogonal to the direction in which the substrate moves. In this configuration or method, the ejection control unit individually controls opening and closing of each set of on-off valves in the substrate transport direction according to the current substrate position during transport, whereby the amount of gas ejected at each pair of spouts Or consumption can be minimized.

  According to a preferred aspect of the present invention, the substrate transport unit includes guide rails disposed on both sides of the stage so as to extend in parallel with the direction of movement of the substrate, and a slider movable along the guide rails. And a conveyance drive unit that drives the slider to move along the guide rail, and a holding unit that extends from the slider toward the center of the stage and detachably holds the edge of the substrate.

  In addition, the holding part can be detachably coupled to the edge of the substrate, the base end is fixed to the slider, and the distal end is coupled to the pad, depending on the height position of the substrate. A pad support portion whose vertical position is displaced in the vertical direction. In this case, the pad is preferably a vacuum adsorption type.

  The processing liquid supply unit may include a nozzle that discharges or drops the processing liquid from above the stage toward the upper surface of the substrate. This nozzle may be a moving type or a stationary type. In the case of the stationary type, the processing liquid may be supplied to the substrate within a fixed processing liquid supply region set on the stage. In the processing liquid supply region, it is preferable to control the air pressure for floating the substrate to be substantially constant regardless of whether the substrate is present or not. For this purpose, a suction port for sucking air is provided on the upper surface of the stage so as to be mixed with the ejection port, and the vertical upward pressure by the ejection port and the vertical downward direction by the suction port so that the substrate floats from the upper surface of the stage at a predetermined height position. It is preferable that the balance with the pressure be controlled. In order to efficiently supply the processing liquid to the entire surface of the substrate by carrying the substrate once, it is preferable that the nozzle has a discharge port extending in the horizontal direction perpendicular to the direction in which the substrate moves.

  According to the substrate processing apparatus of the present invention, the substrate is floated in the air by using the gas pressure ejected from the ejection port provided on the upper surface of the stage, and the floating substrate is transported by the above-described configuration and operation. However, since the processing liquid was supplied and applied on the substrate, the flow rate of the pressure gas ejected from each ejection port was switched according to the positional relationship with the substrate so that the consumption of the pressure gas could be saved. Therefore, it is possible to cope with the increase in size of the substrate without difficulty.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a coating and developing treatment system as one configuration example to which the substrate processing apparatus of the present invention can be applied. This coating / development processing system 10 is installed in a clean room. For example, an LCD substrate is a substrate to be processed, and a series of processes such as cleaning, resist coating, pre-baking, developing, and post-baking in a photolithography process are performed in the LCD manufacturing process. Is what you do. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this processing system.

In the coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are disposed at both ends in the longitudinal direction (X direction). ) 18.
The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and up to four cassettes C can be accommodated in a horizontal direction, for example, in the Y direction by stacking square glass substrates G in multiple stages. A cassette stage 20 that can be placed side by side and a transport mechanism 22 that puts and removes the substrate G to and from the cassette C on the stage 20 are provided. The transport mechanism 22 has a means for holding the substrate G, for example, a transport arm 22a, can be operated with four axes of X, Y, Z, and θ, and is adjacent to the adjacent process station (P / S) 16 side and the substrate G. Delivery is now possible.

  In the process station (P / S) 16, the processing units are arranged in the order of the process flow or process on a pair of parallel and opposite lines A and B extending in the system longitudinal direction (X direction). More specifically, the upstream process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side includes a cleaning process unit 24, a first thermal processing unit 26, and The coating process section 28 and the second thermal processing section 30 are arranged in a horizontal row. On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a second thermal processing unit 30, a development processing unit 32, and a decolorization process are provided. The unit 34 and the third thermal processing unit 36 are arranged in a horizontal row. In this line configuration, the second thermal processing unit 30 is located at the end of the upstream process line A and at the beginning of the downstream process line B, and straddles between both lines A and B. ing.

  An auxiliary transfer space 38 is provided between the process lines A and B, and a shuttle 40 that can horizontally place the substrate G in units of one sheet is bidirectional in the line direction (X direction) by a drive mechanism (not shown). Can be moved to.

  In the upstream process line A, the cleaning process unit 24 includes a scrubber cleaning unit (SCR) 42, and an excimer is disposed at a location adjacent to the cassette station (C / S) 10 in the scrubber cleaning unit (SCR) 42. A UV irradiation unit (e-UV) 41 is arranged. The cleaning unit in the scrubber cleaning unit (SCR) 42 performs brushing cleaning and blow cleaning on the upper surface (surface to be processed) of the substrate G while transporting the substrate G in the horizontal direction A by roller transport or belt transport. It has become.

  The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical transfer mechanism 46 in the center along the process line A, and a plurality of single-wafer oven units are provided on both front and rear sides thereof. A multi-stage unit section or oven towers (TB) 44 and 48 are provided which are stacked in multiple stages together with a substrate transfer pass unit.

For example, as shown in FIG. 2, an upstream oven tower (TB) 44 includes a substrate carrying pass unit (PASS _L ) 50, dehydrating baking heating units (DHP) 52 and 54, and an adhesion unit. (AD) 56 are stacked in order from the bottom. Here, the pass unit (PASS _L ) 50 provides a space for carrying the substrate G after the cleaning process from the scrubber cleaning unit (SCR) 42 into the first thermal processing unit 26. The oven tower (TB) 48 on the downstream side includes a pass unit (PASS _R ) 60 for carrying out the substrate, cooling units (CL) 62 and 64 for adjusting the substrate temperature, and an adhesion unit (AD) 66 in order from the bottom. Stacked. Here, pass unit (PASS _R) 60 provides a space for unloading the substrate G having undergone the required heat treatment at a first thermal processing unit 26 to the downstream side of the coating process portion 28.

  In FIG. 2, the transport mechanism 46 includes a lift transport body 70 that can be moved up and down along a guide rail 68 that extends in the vertical direction, and a swivel transport body 72 that can rotate or turn in the θ direction on the lift transport body 70. And a transport arm or tweezers 74 that can move back and forth or extend and retract in the front-rear direction while supporting the substrate G on the revolving transport body 72. A drive unit 76 for driving the lifting and lowering conveyance body 70 up and down is provided on the base end side of the vertical guide rail 68, and a driving unit 78 for driving the swiveling conveyance body 72 to rotate is attached to the lifting and lowering conveyance body 70. A drive unit 80 for advancing and retracting 74 is attached to the rotary transport body 72. Each drive part 76,78,80 may be comprised by the electric motor etc., for example.

  The transport mechanism 46 configured as described above can access any unit in the oven towers (TB) 44 and 48 adjacent to each other by moving up and down at high speed, and the shuttle 40 on the auxiliary transport space 38 side. In both cases, the substrate G can be delivered.

  The coating process unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82 and a vacuum drying unit (VD) 84 along the process line A as shown in FIG. Arranged in a row. The configuration in the coating process unit 28 will be described in detail later.

  The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as that of the first thermal processing unit 26, and a vertical type between the process lines A and B. The transfer mechanism 90 is provided, one oven tower (TB) 88 is provided on the process line A side (last), and the other oven tower (TB) 92 is provided on the process line B side (lead).

Although not shown, for example, in the oven tower (TB) 88 on the process line A side, a substrate loading pass unit (PASS _L ) is disposed at the bottom, and a pre-baking heating unit (PREBAKE) is disposed thereon. For example, they may be stacked in three stages. Further, in the oven tower (TB) 92 on the process line B side, a pass unit (PASS _R ) for carrying out the substrate is disposed at the lowest stage, and a cooling unit (COL) for adjusting the substrate temperature is provided thereon, for example, one stage. The heating unit (PREBAKE) for pre-baking may be stacked thereon, for example, in a two-stage stack.

The transport mechanism 90 in the second thermal processing unit 30 includes the coating process unit 28 and the development process unit 32 via the pass units (PASS _L ) and (PASS _R ) of both oven towers (TB) 88 and 92. Not only can the substrates G be transferred in units of one sheet, but also the substrates G can be transferred in units of sheets to the shuttle 40 in the auxiliary transport space 38 and the interface station (I / F) 18 described later.

  In the downstream process line B, the development process unit 32 includes a so-called flat-flow development unit (DEV) 94 that performs a series of development processing steps while transporting the substrate G in a horizontal posture.

  A third thermal processing unit 36 is disposed downstream of the development process unit 32 with the decolorization process unit 34 interposed therebetween. The decoloring process unit 34 includes an i-ray UV irradiation unit (i-UV) 96 for performing a decoloring process by irradiating the surface to be processed of the substrate G with i-line (wavelength 365 nm).

  The third thermal processing unit 36 has the same configuration as that of the first thermal processing unit 26 and the second thermal processing unit 30, and the vertical transport mechanism 100 along the process line B. A pair of oven towers (TB) 98 and 102 are provided on both the front and rear sides.

Although not shown, for example, in the upstream oven tower (TB) 98, a pass unit (PASS _L ) for carrying a substrate is placed at the lowest stage, and a heating unit (POBAKE) for post-baking is placed thereon, for example. May be stacked in three stacks. Further, in the oven tower (TB) 102 on the downstream side, a post baking unit (POBAKE) is placed at the lowermost stage, and a pass cooling unit (PASS _R · COL) for carrying out and cooling the substrate is placed on the post baking unit (POSBAKE). The heating unit (POBAKE) for post-baking may be stacked in two layers.

The transport mechanism 100 in the third thermal processing unit 36 irradiates with i-line UV via the pass units (PASS _L ) and pass cooling units (PASS _R · COL) of both multi-stage unit parts (TB) 98 and 102. Not only can the unit (i-UV) 96 and cassette station (C / S) 14 and the substrate G be transferred in units of one sheet, but also the substrate G can be transferred in units of one unit to the shuttle 40 in the auxiliary transport space 38. ing.

  The interface station (I / F) 18 includes a transfer device 104 for exchanging the substrate G with the adjacent exposure device 12, and a buffer stage (BUF) 106 and an extension / cooling stage (EXT / COL) around the transfer device 104. ) 108 and peripheral device 110 are arranged. A stationary buffer cassette (not shown) is placed on the buffer stage (BUF) 106. The extension / cooling stage (EXT / COL) 108 is a stage for transferring a substrate having a cooling function, and is used when the substrate G is exchanged with the process station (P / S) 16 side. For example, the peripheral device 110 may have a configuration in which a titler (TITLER) and a peripheral exposure device (EE) are stacked vertically. The transfer device 104 has a means for holding the substrate G, for example, a transfer arm 104a, and transfers the substrate G to and from the adjacent exposure device 12, each unit (BUF) 106, (EXT / COL) 108, (TITLER / EE) 110. Can be done.

FIG. 3 shows a processing procedure in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from any of the cassettes C on the stage 20, and the cleaning process unit 24 of the process station (P / S) 16. It is carried into the excimer UV irradiation unit (e-UV) 41 (step S ₁ ).

Excimer UV irradiation unit (e-UV) substrate G in the 41 is subjected to dry cleaning by UV irradiation (step S _2). This UV cleaning mainly removes organic substances on the substrate surface. After completion of the ultraviolet cleaning, the substrate G is moved to the scrubber cleaning unit (SCR) 42 of the cleaning process unit 24 by the transport mechanism 22 of the cassette station (C / S) 14.

In the scrubber cleaning unit (SCR) 42, as described above, the substrate G is brushed or blown onto the upper surface (surface to be processed) of the substrate G while being transported in a horizontal position in the horizontal direction by roller transport or belt transport. By performing cleaning, particulate dirt is removed from the substrate surface (step S ₃ ). After the cleaning, the substrate G is rinsed while being conveyed in a flat flow, and finally the substrate G is dried using an air knife or the like.

The substrate G that has been cleaned in the scrubber cleaning unit (SCR) 42 is carried into the pass unit (PASS _L ) 50 in the upstream oven tower (TB) 44 of the first thermal processing section 26 in a flat flow. The

In the first thermal processing unit 26, the substrate G is sequentially transferred to a predetermined oven unit in a predetermined sequence by the transport mechanism 46. For example, the substrate G is first transferred from the pass unit (PASS _L ) 50 to one of the heating units (DHP) 52 and 54, where it is subjected to dehydration (step S ₄ ). Next, the substrate G is transferred to one of the cooling units (COL) 62 and 64 where it is cooled to a constant substrate temperature (step S ₅ ). Thereafter, the substrate G is transferred to an adhesion unit (AD) 56 where it is subjected to a hydrophobic treatment (step S ₆ ). After completion of the hydrophobic treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62 and 64 (step S ₇ ). Finally, the substrate G is transferred to the pass unit (PASS _R ) 60 in the downstream oven tower (TB) 48.

  As described above, in the first thermal processing unit 26, the substrate G is arbitrarily transferred between the upstream multi-stage oven tower (TB) 44 and the downstream oven tower (TB) 48 via the transport mechanism 46. You can come and go. The second and third thermal processing units 30 and 36 perform the same substrate transfer operation.

The substrate G that has undergone a series of thermal or thermal processing as described above in the first thermal processing unit 26 is applied from the pass unit (PASS _R ) 60 in the downstream oven tower (TB) 48 to the coating process unit. It is moved to 28 resist coating units (CT) 82.

In the resist coating unit (CT) 82, the substrate G is coated with a resist solution on the upper surface (surface to be processed) by a spinless method using a long resist nozzle as will be described later. Next, the substrate G is subjected to a drying process by a reduced pressure drying unit (VD) 84 adjacent to the downstream side (step S ₈ ).

The substrate G subjected to the resist coating process as described above is transferred from the reduced pressure drying unit (VD) 84 to the pass unit (PASS _L ) in the upstream oven tower (TB) 88 of the adjacent second thermal processing unit 30. It is brought in.

Within the second thermal processing unit 30, the substrate G is sequentially transferred to a predetermined unit by the transport mechanism 90 in a predetermined sequence. For example, the substrate G is first transferred from the pass unit (PASS _L) to one of the heating units (PREBAKE), where it undergoes a heat treatment of pre-baking (Step S _9). Next, the substrate G is transferred to one of the cooling units (COL), where it is cooled to a constant substrate temperature (step S ₁₀ ). Thereafter, the substrate G passes through the pass unit (PASS _R ) on the downstream oven tower (TB) 92 side or without the extension cooling stage (EXT COL) on the interface station (I / F) 18 side. ) 108.

In the interface station (I / F) 18, the substrate G is transferred from the extension / cooling stage (EXT / COL) 108 to the peripheral exposure device (EE) of the peripheral device 110, where the resist adhering to the peripheral portion of the substrate G is removed. After receiving an exposure for removal during development, the image is sent to the adjacent exposure apparatus 12 (step S ₁₁ ).

In the exposure device 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S ₁₁ ), it is first carried into a titler (TITLER) of the peripheral device 110, where it is placed on the substrate. Predetermined information is written in a predetermined part (step S ₁₂ ). Thereafter, the substrate G is returned to the extension / cooling stage (EXT / COL) 108. Transfer of the substrate G in the interface station (I / F) 18 and exchange of the substrate G with the exposure apparatus 12 is performed by the transfer device 104.

In the process station (P / S) 16, the transport mechanism 90 receives the exposed substrate G from the extension / cooling stage (EXT / COL) 108 in the second thermal processing unit 30, and the oven tower ( TB) is transferred to the developing process section 32 via the pass unit (PASS _R ) in the 92.

In the development process unit 32, the substrate G received from the pass unit (PASS _R ) in the oven tower (TB) 92 is carried into the development unit (DEV) 94. Substrate G in the developing unit (DEV) 94 is conveyed by the flat flow manner toward the downstream process line B, developing during the transport, rinse, a series of development processing step drying is performed (step S _13).

The substrate G subjected to the development process in the development process unit 32 is carried into the decolorization process unit 34 adjacent to the downstream side in a flat flow, where it is subjected to a decolorization process by i-line irradiation (step S ₁₄ ). The substrate G that has been subjected to the decoloring process is carried into the pass unit (PASS _L ) in the upstream oven tower (TB) 98 of the third thermal processing unit 36.

In the third thermal processing unit 36, the substrate G is transferred to the first one of the heating units (POBAKE) from the pass unit (PASS _L), where it undergoes a heat treatment of the post-baking (Step S _15). Next, the substrate G is transferred to a path cooling unit (PASS _R · COL) in the downstream oven tower (TB) 102, where it is cooled to a predetermined substrate temperature (step S ₁₆ ). The transport mechanism 100 transports the substrate G in the third thermal processing unit 36.

On the cassette station (C / S) 14 side, the transport mechanism 22 receives the substrate G that has completed all the steps of the coating and developing process from the pass cooling unit (PASS _R COL) of the third thermal processing unit 36, The received substrate G is accommodated in one of the cassettes C on the stage 20 (step S ₁ ).

  In this coating and developing treatment system 10, the present invention can be applied to the resist coating unit (CT) 82 of the coating process unit 28. Hereinafter, an embodiment in which the present invention is applied to a resist coating unit (CT) 82 will be described with reference to FIGS.

  As shown in FIGS. 4 and 5, the resist coating unit (CT) 82 according to the embodiment of the present invention has a stage 112 extending long in the direction of the process line A (X direction). A resist solution R is supplied onto the substrate G from a resist nozzle 114 disposed above the stage 112 while the substrate G is transported in the same direction (X direction) while being constant on the upper surface (surface to be processed). The resist coating film is formed with a thickness of 5 mm. Here, the stage 112 does not function as a mounting table for mounting and holding the substrate G as in the prior art, but functions as a substrate floating table for floating the substrate G in the air by the force of air pressure. Then, the rectilinear motion type substrate transfer units 116 disposed on both sides of the stage 112 detachably hold both side edges of the substrate G floating on the stage 112, and the direction of the process line A or the longitudinal direction of the stage The substrate G is transported in the (X direction). The resist nozzle 114 is a stationary type, not a moving type or a scanning type, and is fixedly installed above the center of the stage 112 in the transport direction (X direction).

More specifically, the stage 112 is divided into _five regions M ₁ , M ₂ , M ₃ , M ₄ , and M ₅ in the longitudinal direction (X direction) (FIG. 5). The leftmost area M ₁ is a carry-in area, and the substrate G transferred from the upstream side unit, that is, the pass unit (PASS _R ) 60 (FIG. 2) of the oven tower (TB) 48 is carried into this area M ₁ . Is done. In the carry-in area M ₁ , a plurality of lift pins 118 (for example, four) that can move up and down for receiving the substrate G from a transfer arm (not shown) are provided at a predetermined interval. Further, the carrying-area M ₁ is also the area substrate transfer of a floating starts, high-pressure or positive pressure of the compressed air the substrate G on the stage upper surface of the region in order to float at the desired height H _a A large number of outlets 120 are provided at a constant density. Here, the height position or the raised position H _a of the substrate G viewed from the upper surface of the stage 112 in the carrying region M ₁ does not require a particularly high accuracy, for example if kept in the range of 100-150 .mu.m. Further, it is preferable that the size of the carry-in area M ₁ exceeds the size of the substrate G in the transport direction (X direction).

A region M ₃ set at the center of the stage 112 is a resist solution supply region or a coating region, and the substrate G is supplied with the resist solution R from the upper resist nozzle 114 when passing through this region M ₃ . _On the upper surface of the stage in the coating region M ₃ , there are fixed a jet port 120 for jetting high-pressure or positive-pressure compressed air and a suction port 122 for sucking air with negative pressure in order to float the substrate G at a desired flying position H _b . Many are provided in a mixed density.

The reason why the positive pressure outlet 120 and the negative pressure inlet 122 are mixed is to maintain the floating position _Hb at a set value (for example, 50 μm) with high accuracy. That is, floating position H _b in the coating area M ₃ are, defines a gap S (e.g. 100 [mu] m) between the nozzle lower end (discharge port) and the substrate upper surface (surface to be processed). The gap S is an important parameter that influences the resist coating film and the resist consumption, and needs to be kept constant with high accuracy. In this embodiment, a vertical upward force by compressed air is applied to the portion of the substrate G passing through the coating region M ₃ from the jet port 120 and at the same time, a vertical downward force by the negative pressure suction force from the suction port 122. By applying this force, the balance of the combined pressure in both directions is controlled to maintain the flying position _Hb at a set value (50 μm). For this floating position control, a feedback control mechanism including a height detection sensor (not shown) for detecting the height position of the substrate G may be provided. Note that the size of the coating region M ₃ in the transport direction (X direction) only needs to be large enough to stably form the narrow gap S as described above immediately below the resist nozzle 114, and is usually larger than the size of the substrate G. Can be small.

Middle area M ₂ that is set between the loading area M ₁ and the application area M ₃ are, coating area the height position of the substrate G during transport from the floating position H _a in the carrying region M ₁ (100-150 .mu.m) This is a transition region for changing or transitioning to the flying position H _b (50 μm) in M ₃ . Even in the transition region M ₂ , the jet port 120 and the suction port 122 are mixedly arranged on the upper surface of the stage 112. However, and the density of the suction port 122 gradually increases along the conveying direction, thereby so that the floating position of the substrate G during transport moves from gradual or linearly H _a in H _b.

In the region M ₄ adjacent to the downstream side of the coating region M ₃ , the height position of the substrate G is changed from the floating position H _b (50 μm) for coating to the floating position H _c (for example, 100 to 150 μm) for unloading. It is a transition area for. _On the upper surface of the stage in the transition region M ₄ , the jet outlet 120 and the suction port 122 are arranged in a mixed manner in an arrangement pattern that is in contrast to the upstream transition region M ₂ described above in the transport direction.

A region M ₅ at the downstream end (right end) of the stage 112 is a carry-out region. The resist coating unit (CT) 82 substrate G that have undergone resist coating process in is carried out to the vacuum drying unit (VD) 84 on the downstream side next to the carrier arm (not shown) from the unloading area M _5. The carry-out area M ₅ is spatially contrasted with the carry-in area M ₁ described above, and a plurality of lift pins 124 (for example, four) that can be moved up and down for delivery of the substrate G are provided at a predetermined interval. ) together is provided, spout 120 for floating the substrate G in the floating position H _c are provided a number with a constant density to the stage top surface.

  The resist nozzle 114 has a long nozzle body 126 extending in the Y direction with a length that can cover the substrate G on the stage 112 from one end to the other end, and a resist solution from a resist solution supply source (not shown). A supply pipe 128 is connected. The nozzle body 126 is supported by a gate-shaped or inverted U-shaped nozzle support (not shown), and has a slit-shaped or porous fine-diameter discharge port (in the Y-direction) at the lower end thereof. (Not shown) is formed. Although the resist nozzle 114 is a stationary type, it is preferable that the resist nozzle 114 is movable in the vertical direction (height adjustment is possible) in order to adjust the gap S with the substrate G passing underneath.

  As shown in FIGS. 4, 6, and 7, the substrate transport unit 116 includes a pair of left and right guide rails 130 arranged in parallel on both sides of the stage 112 and an axial direction (X direction) on both guide rails 130. A pair of left and right sliders 132 that are movably attached, a transport drive unit 134 that simultaneously moves the sliders 132 on both guide rails 130, and a slider G that extends from both sliders 132 toward the center of the stage 112. It has a pair of left and right holding parts 136 that hold both edges detachably.

  Here, the conveyance drive unit 134 may be configured by a linear drive mechanism such as a linear motor. The holding portion 136 supports the vacuum suction pad 138 that is sucked by a vacuum suction force on the lower surface side edge of the substrate G, and supports the vacuum suction pad 136 at the tip portion, with the base end portion fixed to the slider 132 as a fulcrum. It has a leaf spring type pad support 140 that can be elastically deformed so that the height position of the tip can be changed. The vacuum suction pads 138 are arranged in a line at a constant pitch, and the pad support 140 supports the vacuum suction pads 138 independently. As a result, the substrate G can be stably held at individual height positions (even at different height positions) by the individual vacuum suction pads 138 and the pad support portions 140.

  As shown in FIG. 8, the vacuum suction pad 138 is provided with a plurality of suction ports 138b on the upper surface of a rectangular parallelepiped pad body 138a made of, for example, synthetic rubber. The illustrated suction port 138b is a slit-like long hole, but may be a round or rectangular small hole. To the vacuum suction pad 138, for example, a belt-like vacuum tube 142 made of synthetic rubber is connected. The pipe 142a of the vacuum pipe 142 communicates with a vacuum source (not shown) such as a vacuum pump. As shown in FIGS. 6 and 7, the vacuum tube 142 is supported by a hinge 144 attached to the upper surface of the slider 130, and is elastically deformed so as to follow the vacuum suction pad 138. The height position can be changed.

  As shown in FIG. 4, the holding portion 136 preferably has a separation type or completely independent type configuration in which one side of the vacuum suction pad 138 and the pad support portion 140 are separated for each set. However, as shown in FIG. 9, a single plate spring provided with a notch 141 forms a pad support portion 140 for one row on one side, and a vacuum suction pad 138 on one side is disposed thereon. Configuration is also possible.

As described above, a large number of jet outlets 120 are provided on the upper surface of the stage 112. In this embodiment, an ejection control unit that individually and automatically switches the air ejection flow rate for each ejection port 120 belonging to the carry-in area M ₁ and the carry-out area M ₅ of the stage 112 according to the relative positional relationship with the substrate G. 144 is provided in the stage 112 in the form of a flow rate switching valve.

  In FIG. 10, the structure of the ejection control part 144 by one Example is shown. The ejection control unit 144 includes a valve chamber 146 having a spherical wall surface formed inside the stage 112, and a spherical valve body 148 movably provided in the valve chamber 146. Yes. An outlet 146a and an inlet 146b that are opposed to each other in the vertical direction are formed at the top and bottom of the valve chamber 146, respectively. The outlet 146a communicates with the jet outlet 120 corresponding to the jet control unit 144. The inlet 146b communicates with the compressed air supply path 150 running under the stage 112.

  FIG. 11 shows an example of a piping pattern of the compressed air supply path 150 in the stage 112. For example, compressed air from a compressed air source (not shown) such as a compressor flows through the external pipe 152 and is introduced into the compressed air introduction unit 154 in the stage 112. The compressed air introduced into the compressed air introduction part 154 is distributed to a large number of compressed air supply paths 150 extending from there to the stage 112.

In FIG. 10, a valve seat is formed around the outlet 146a of the valve chamber 146. In this valve seat, a plurality of (four) grooves 146c extending radially from the outlet 146a are formed at predetermined intervals (for example, 90 ° intervals) in the circumferential direction. Thereby, even if the valve body 148 closely contacts or sits on the valve seat and closes the outlet 146a, the compressed air leaks from the valve chamber 146 through the groove portion 146c to the jet outlet 120 side. The valve body 148 is, for example, a resin sphere having a diameter one or two times smaller than the inner diameter of the valve chamber 146, and a vertical upward force P _U corresponding to the air pressure on the inlet 146b side is applied to the lower half of the spherical surface. receiving with a vertical downward force in accordance with the air pressure in the outlet 146a side in the upper half of the sphere (reaction) subjected to P _D. Further, gravity P _G (a constant value) corresponding to the mass of the valve body 148 always acts vertically downward. The valve body 148 changes the vertical position (height position) in the valve chamber 146 in accordance with the difference between the vertical upward force P _U and the vertical downward force (P _D + P _G ) as described above.

  In this embodiment, as shown in FIG. 10, depending on whether or not the substrate G is present above each ejection port 120, the ejection control unit 144 directly below the ejection port 120 has a valve body in the valve chamber 146. The height position of 148 is switched to either the first position where it is in close contact with the valve seat on the outlet 146a side or the second position where it is separated from the valve seat and floats in the valve chamber 146. It has become.

That is, when each spout 120 upward of (strictly setting floating position H _a following approach distance) there is the substrate G, the spout 120 near or valve chamber immediately below the counteraction from the substrate G 146 As the air pressure in the vicinity of the outlet 146a increases, the vertical downward force (especially P _D ) acting on the valve body 148 increases so as to be equal to or slightly higher than the vertical upward force P _U , It is separated from the valve seat on the 146a side. As a result, the outlet 146a is opened, and the compressed air introduced into the valve chamber 146 from the inlet 146b passes through the outlet 146a at a large flow rate and is ejected from the outlet 120.

However, when the spout 120 upward of (strictly setting floating position H _a following approach distance) no substrate G, the air pressure in the vicinity of the outlet 146a of the spout 120 to the valve chamber 146 immediately below the lower Therefore, the vertical upward force P _U is larger than the vertical downward force (P _D + P _G ) acting on the valve body 148 so that the valve body 148 is pressed against the valve seat near the outlet 146a from below. In close contact. As a result, the outlet 146a is substantially closed, but the compressed air in the valve chamber 146 leaks through the groove 146c and exits from the jet outlet 120 with a small flow rate.

  Next, the overall operation or action of the resist coating unit (CT) 82 of this embodiment will be described.

As described above, the substrate G that has undergone the predetermined heat treatment in the first thermal processing section 26 (FIG. 1) is transferred from the pass unit (PASS _R ) 60 (FIG. 2) in the downstream oven tower (TB) 48 to the resist. It is transferred to the coating unit (CT) 82 and is carried into the carry-in area M ₁ of the stage 112 by a transfer arm (not shown).

At this time, in the carry-in area M ₁ , the lift pins 118 rise or protrude from the upper surface of the stage 112 to the height position for transferring the substrate as shown by a dotted line in FIG. That height position of the conveyance remains down to the floating position H _a. At this time, the ejection flow rate of air in each ejection port 120 of the carry-area M ₁ is ejected controller as described above by the action of (flow rate switching valve) 144 (FIG. 10), before the substrate G arrives at the floating position H _a (because the valve body 148 closes the outlet 146a of the valve chamber 146) low flow rate is limited to, Ya substrate G descend the floating position H _a soon (ejection port 120 a valve body pressure is increased in the vicinity of 148 switches to a higher flow rate by leaving the outlet 146a in the valve chamber 146. Thus, the substrate G is subjected to vertical upward force on the entire substrate at a required pressure floating position H _a from the stage upper surface (ejection port 120) of the preset can float in the air while maintaining a horizontal attitude.

Further, the slider 132 and the holding unit 136 of the substrate transport unit 116 are also waiting in the carry-in area M ₁ . When both side edge portions of the substrate G is lowered to the floating position H _a by lift pins 118 rests vacuum suction pad 138 of the holder 136, a vacuum force from the vacuum source is supplied to the vacuum suction pad 138, the substrate G is both side edges Is supported by the holding part 136 or the slider 132.

When the substrate carrying-in operation is completed as described above, the substrate carrying unit 116 activates the carrying driving unit 134 to move the left and right sliders 132 simultaneously or in parallel along the guide rail 130 in the carrying direction (X direction) at a constant speed. Move. Thus, the substrate G is transferred from the carry-in area M ₁ to the coating area M ₃ through the transition area M ₂ while floating in the air while maintaining a horizontal posture on the stage 112.

At each ejection port 120 in the carry-in area M ₁ , the substrate G leaves in the order from the left end side. Then, the flow rate of the air at each of the spouts 120 is changed from a large flow rate for floating the substrate to a small flow rate for standby by the action of the above-described ejection control unit (flow rate switching valve) 144 (FIG. 10). Switch. That is, when the substrate G leaves from the upper side of each jet port 120, the air pressure in the vicinity of the jet port 120 or the outlet 146a of the valve chamber 146 just below the jet port 120 becomes low, and the valve body 148 closes the outlet 146a.

Thus, the ejection amount of the left-side ejection port 120 in the order from the loading area M ₁ is switched off from substantially on the trailing edge of the substrate G leaves the loading area M _1, all in the loading area M ₁ The ejection amount of the ejection port 120 is substantially turned off, and this off state is maintained until the next substrate G is loaded. As a result, the consumption of the use force (compressed air) for floating the substrate in the carry-in area M ₁ can be greatly saved.

In the coating region M ₃ , the resist nozzle 114 discharges or drops the strip-shaped resist solution R from the slit-shaped fine-diameter discharge port toward the upper surface of the substrate G that passes directly below, whereby the substrate in the transport direction (X direction). A resist solution R is sequentially applied to each part of the substrate G from the start end to the rear end, and a resist coating film is formed over the entire upper surface of the substrate with a constant film thickness. In addition, the peripheral part of the board | substrate G can be made into a blank area | region, and it can avoid applying the resist liquid R to this area | region. As a result, a process and an apparatus (edge remover) for removing an excess resist film from the peripheral edge of the substrate G after applying the resist can be omitted.

The substrate G coated with the resist solution R in the coating region M ₃ as described above is transferred to the carry-out region M ₅ through the transition region M ₄ . In the carry-out area M ₅ , an operation completely opposite (reverse) to the carry-in area M ₁ is performed in terms of space and timing. That is, the ejection flow rate of air in each ejection port 120 of the application region M ₅ is ejected controller as described above by the action of (flow rate switching valve) 144 (FIG. 10), the substrate G is to floating position H _a just above previously it conveyed (because the valve body 148 closes the outlet 146a of the valve chamber 146) low flow rate is limited to (oFF state), the substrate G comes to floating position H _a right above as soon as The flow rate is switched to a large flow rate (ON state) (by the pressure in the vicinity of the jet port 120 increasing and the valve body 148 is separated from the outlet 146a in the valve chamber 146). This ON state continues until the substrate G leaves, that is, until the lift pins 120 lift the substrate G to the height position for unloading. When the substrate G leaves (is lifted), the air ejection amount at each ejection port 120 is switched from on to off. Then, the off-state is maintained until the next substrate G is conveyed from the coating area M _3. Thus, it is possible to considerably save the consumption of the utility for substrate floating (compressed air) is also in the unloading area M _5.

In this embodiment, the above-described ejection control unit (flow rate switching valve) 144 can be applied to the ejection port 120 in the application region M ₃ and the transition regions M ₂ and M ₄ . In these regions M ₂ , M ₃ , and M ₄ , not only the ejection port 120 but also a negative pressure suction port 122 is provided. Therefore, when the ejection control unit 144 switches on / off the air ejection at each ejection port 120, it is preferable to perform a control to turn on / off the nearby suction port 122 in conjunction with this.

  12 to 15 show modifications of the ejection control unit (flow rate switching valve) 144 in the above-described embodiment.

  In the modification shown in FIG. 12, the valve chamber 146 is formed in a cylinder shape having a cylindrical inner wall, and the valve body 148 is formed in a cylindrical body. Also in this configuration example, the size of the valve body 148 is made one or two times smaller than the indoor space of the valve chamber 146 so that a sufficient gap or flow path is formed between the two when the ejection flow rate is on. Good.

  In the modification shown in FIGS. 13A and 13B, the valve chamber 146 is formed in a cylinder shape having a cylindrical inner wall, and the valve body 148 is formed in a disc body. As shown in the drawing, it is possible to form a plurality of protrusions 148a on the upper surface of the valve body 148 with appropriate intervals in the circumferential direction. When the valve body 148 closes the outlet 146a in the off state, the projection 148a contacts the valve seat, and a gap is formed between the valve body 148 and the valve chamber 146, and compressed air flows from the gap to the jet outlet 120 side. Can be leaked.

  The modification of FIG. 14 is obtained by replacing the shape of the valve body 148 from a cylindrical body to a cone in the configuration of FIG.

In the modification of FIG. 15A, the valve body 148 is configured as a leaf spring type. Specifically, the plate-shaped valve body 148 has a base end portion 148b fixed to the side wall of the valve chamber 146, and a movable portion 148c extending from the base end portion 148b into the valve chamber 146. Then, according to the magnitude relationship between the vertical upward force P _U acting on the movable portion 148c and the vertical downward force P _D (gravity P _G can be substantially ignored), the movable portion 148c supports the base end portion 148b as a fulcrum. As described above, it is elastically displaced between a first position where the valve seat on the outlet 146a side is seated and a second position which is separated from the valve seat. As shown in FIG. 15B, such a plate-like valve element 148 can be formed in a unit of region by punching a single resin film or sheet 156, for example. Of course, it can also be created by molding.

  In FIG. 16, the structure of the principal part of the ejection control mechanism in another embodiment of this invention is shown. In the above-described embodiment, the flow rate switching valve type ejection control unit 144 is provided inside the stage 112 for each ejection port 120, whereas in this embodiment, the stage 112 in the direction in which the substrate G moves (X direction). The upper spout 120 is divided into a plurality of sets at a predetermined pitch (in the illustrated example, one row unit), and compressed air is supplied to each set (row) via an individual on-off valve 162. When the substrate G exists above the (row) spout 120, the on-off valve 162 corresponding to the set (row) is opened, and there is no substrate G above the spout 120 of each set (row). At that time, the on-off valve 162 corresponding to the set (row) is closed.

  In order to configure the ejection control unit as described above, as shown in the figure, external compressed air supply pipes 158 from a compressed air source (not shown) are connected to the stages of each row via branch pipes 160 assigned to each row. Each branch pipe 160 is provided with an on-off valve 162 for each row. Each on-off valve 162 is individually turned on / off by electronic control by a control unit (not shown). The control unit monitors the current position of the substrate G through, for example, a linear scale or linear encoder attached to the substrate transport unit 116, or an optical sensor disposed at an appropriate position, and opens and closes each on-off valve based on the current position information. 162 can be individually turned on and off.

  In addition, instead of providing the opening / closing valve 162 for each row, it is also possible to fill one opening / closing valve 162 in a plurality of rows, for example, 2 to 5 rows, thereby reducing the number of parts and simplifying the configuration. it can.

In the above-described embodiment, the flow rate switching valve type ejection control unit 144 is provided for each ejection port 120 in each of the regions M _{1 to} M ₅ of the stage 112. For example, the regions M ₁ , M ₂ , M ₄ , M only at ₅ provided ejection control section 144 of the flow rate switching valve type, always without providing the coating area M ₃ in the ejection control unit 144 jet, it is also possible to adopt a configuration to suction. As a result, the structure of the application region M ₃ can be simplified, and the reliability of the substrate floating accuracy in the vicinity immediately below the resist nozzle 114 can be improved. Further, for the application region M ₃ , the ejection flow rate may be switched by the ejection control unit shown in FIG. In this case, the air consumption increases as compared with the case where the flow control valve type jet control unit 144 is configured. However, the simplification of the configuration improves the reliability of the apparatus, and the air consumption is higher than the case where the jet is constantly jetted. There is an advantage that can be reduced. Moreover, although the pressure gas for substrate floating used by this invention is usually compressed air, it cannot be overemphasized that other gas, such as nitrogen, may be ejected and a board | substrate may be levitated.

  Various other modifications are possible within the scope of the technical idea of the present invention. For example, in the above-described embodiment, the resist nozzle 114 is a stationary type, but may be horizontally movable as necessary. In addition, the holding unit 136 of the substrate transport unit 116 in the above-described embodiment has the vacuum suction type pad 138. However, a pad or the like that holds the edge of the substrate G mechanically (for example, tightly attached) may also be used. Is possible. Further, if necessary, the substrate G can be temporarily stopped during the transfer on the stage 112, and the transfer speed can be varied.

  The above-described embodiment relates to a resist coating apparatus in a coating / development processing system for LCD manufacturing. However, the present invention is applicable to any processing apparatus or application that supplies a processing liquid onto a substrate to be processed. Therefore, as the processing liquid in the present invention, in addition to the resist liquid, for example, a coating liquid such as an interlayer insulating material, a dielectric material, and a wiring material can be used, and a developing liquid or a rinsing liquid can also be used. The substrate to be processed in the present invention is not limited to an LCD substrate, and other flat panel display substrates, semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates, and the like are also possible.

It is a top view which shows the structure of the application | coating development processing system which can apply this invention. It is a side view which shows the structure of the thermal process part in the application | coating development processing system of embodiment. It is a flowchart which shows the procedure of the process in the application | coating development processing system of embodiment. 1 is a perspective view showing an overall configuration of a resist coating unit in a coating and developing treatment system of an embodiment. It is a schematic front view which shows the whole structure of the resist coating unit in embodiment. It is a partial cross section schematic side view which shows the structure of the board | substrate conveyance part in the resist coating unit of embodiment. It is an expanded sectional view showing composition of a holding part of a substrate conveyance part in a resist application unit of an embodiment. It is a perspective view which shows the structure of the pad part of the board | substrate conveyance part in the resist coating unit of embodiment. It is a perspective view which shows one modification of the holding | maintenance part of the board | substrate conveyance part in the resist coating unit of embodiment. It is sectional drawing which shows the structure of the ejection control part in the resist application unit of embodiment. It is a fragmentary sectional view showing composition of a channel inside a stage in a resist application unit of an embodiment. It is sectional drawing which shows the modification of the ejection control part in the resist coating unit of embodiment. It is sectional drawing which shows another modification of the ejection control part in the resist application unit of embodiment. It is a top view which shows the structure of the valve body in the modification of FIG. 13A. It is sectional drawing which shows another modification of the ejection control part in the resist application unit of embodiment. It is sectional drawing which shows another modification of the ejection control part in the resist application unit of embodiment. It is a top view which shows the structure of the valve body in the modification of FIG. 15A. It is sectional drawing which shows the structure of the ejection control part in another embodiment.

Explanation of symbols

10 Process Station 28 Application Process Unit 82 Resist Application Unit (CT)
112 Stage 114 Resist nozzle 116 Substrate transport unit 120 Jet port 122 Suction port 130 Guide rail 132 Slider 134 Transport drive unit 136 Holding unit 138 Vacuum suction pad 140 Pad support unit 142 Vacuum pipe 144 Ejection control unit 146 Valve chamber 146a Outlet 146b Inlet 146c Groove
148 Valve body 150 In-stage flow path 160 Branch pipe 162 Open / close valve

Claims (23)

A stage having a number of jets on the upper surface of the stage, and a stage for floating the substrate to be processed to a desired height by the pressure of gas jetted from the jets;
A substrate transport unit that moves the substrate in a floating state on the stage in a predetermined direction;
A processing liquid supply unit for supplying a processing liquid to the upper surface of the substrate above the stage;
An ejection control unit that switches a gas ejection amount for each of the ejection ports belonging to a predetermined region of the stage according to whether or not the substrate is closer than a predetermined distance and above the ejection port; A substrate processing apparatus. The ejection control unit is
A valve chamber having an outlet communicating with the jet outlet formed in the stage and an inlet facing the outlet;
A gas supply unit for supplying gas from the inlet to the valve chamber;
A valve body that is movably provided in the valve chamber and is displaced according to a difference between the pressure on the inlet side and the pressure on the outlet side,
When the substrate is closer than the predetermined distance above the spout, the valve body is displaced to a first position close to the inlet in the valve chamber, and the spout from the outlet. Increase the flow rate of gas discharged to
When the substrate is not above the jet port or is not closer than the predetermined distance, the valve body is displaced to a second position close to the outlet in the valve chamber, and from the outlet. The substrate processing apparatus of Claim 1 which restrict | limits the flow volume of the gas discharged | emitted by the said jet nozzle.   The substrate processing apparatus according to claim 2, wherein a valve seat is provided near the outlet in the valve chamber, and the valve body is in close contact with the valve seat at the first position.   The substrate processing apparatus according to claim 3, wherein a gap is formed between the valve body and the valve seat to allow gas to leak to the jet port side in a state where the valve body is in close contact with the valve seat. . In the valve chamber, the outlet and the inlet face in the vertical direction,
The valve body is provided so as to be movable in the vertical direction in the valve chamber, and a vertical upward force corresponding to the pressure on the inlet side, a vertical downward force corresponding to the pressure on the outlet side, and a vertical downward force due to gravity. The substrate processing apparatus as described in any one of Claims 2-4 which receive.   The substrate processing apparatus according to claim 2, wherein the valve chamber has a spherical inner wall.   The substrate processing apparatus according to claim 2, wherein the valve chamber has a cylindrical inner wall.   The substrate processing apparatus according to claim 2, wherein the valve body has a spherical shape.   The substrate processing apparatus according to claim 2, wherein the valve body has a cylindrical shape.   The substrate processing apparatus according to claim 2, wherein the valve body has a conical shape.   The substrate processing apparatus according to claim 2, wherein the valve body has a disk shape. The valve body has a base end portion fixed to a side wall of the valve chamber, and a movable portion extending from the base end portion into the valve chamber,
The substrate processing apparatus according to claim 2, wherein the movable portion is displaced between the first position and the second position with the base end portion as a fulcrum.   The substrate processing apparatus according to claim 2, wherein the gas supply unit includes a gas flow path provided inside the stage for supplying gas from a gas supply source to the valve chamber. The ejection control unit is
Dividing the jet nozzles on the stage into a plurality of groups at a predetermined pitch in the direction of movement of the substrate, and supplying gas via individual on-off valves for each group;
When the substrate is present above each group of jets, the on-off valve corresponding to the group is opened,
2. The substrate processing apparatus according to claim 1, wherein when the substrate is not present above each group of ejection ports, the on-off valve corresponding to the group is closed.   The substrate processing apparatus according to claim 14, wherein each set of jet nozzles on the stage is arranged in a line in a direction orthogonal to a direction in which the substrate moves. The substrate transport unit is
Guide rails arranged on both sides of the stage so as to extend in parallel with the moving direction of the substrate;
A slider movable along the guide rail;
A transport driving unit that drives the slider to move along the guide rail;
The substrate processing apparatus according to claim 1, further comprising: a holding portion that extends from the slider toward a center portion of the stage and detachably holds an edge portion of the substrate. The holding part is
A pad removably connectable to an edge of the substrate;
A base end portion is fixed to the slider, a tip end portion is coupled to the pad, and a pad support portion in which a height position of the tip end portion is displaced in a vertical direction in accordance with a height position of the substrate. Item 17. The substrate processing apparatus according to Item 16.   The substrate processing apparatus according to claim 17, wherein the pad comprises a vacuum suction pad that is bonded to the substrate by a vacuum suction force.   The substrate processing apparatus according to claim 1, wherein the processing liquid supply unit includes a nozzle that discharges or drops the processing liquid from above the stage toward an upper surface of the substrate.   The substrate processing apparatus according to claim 19, wherein the nozzle has a discharge port that extends in a horizontal direction orthogonal to a direction in which the substrate moves.   21. The substrate processing apparatus according to claim 1, wherein the processing liquid supply unit supplies the processing liquid to the substrate within a certain processing liquid supply region set on the stage.   The substrate processing apparatus according to any one of claims 1 to 21, wherein in the processing liquid supply region, a gas pressure for floating the substrate is controlled to be substantially constant regardless of whether or not the substrate is present. In the treatment liquid supply region, a suction port for sucking gas is provided on the upper surface of the stage so as to be mixed with the jet port, and the substrate is vertically directed upward by the jet port so that the substrate floats from the upper surface of the stage at a predetermined height position. 23. The substrate processing apparatus according to claim 22, wherein a balance between the pressure of the gas and the vertical downward pressure by the suction port is controlled.

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