JP2005534193A5 - - Google Patents

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Publication number
JP2005534193A5
JP2005534193A5 JP2004527657A JP2004527657A JP2005534193A5 JP 2005534193 A5 JP2005534193 A5 JP 2005534193A5 JP 2004527657 A JP2004527657 A JP 2004527657A JP 2004527657 A JP2004527657 A JP 2004527657A JP 2005534193 A5 JP2005534193 A5 JP 2005534193A5
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JP
Japan
Prior art keywords
magnetic
shielding layer
layer
magnetic sensing
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004527657A
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English (en)
Japanese (ja)
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JP2005534193A (ja
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Publication date
Priority claimed from US10/201,381 external-priority patent/US7037604B2/en
Application filed filed Critical
Publication of JP2005534193A publication Critical patent/JP2005534193A/ja
Publication of JP2005534193A5 publication Critical patent/JP2005534193A5/ja
Withdrawn legal-status Critical Current

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JP2004527657A 2002-07-23 2003-07-23 磁気検知装置 Withdrawn JP2005534193A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/201,381 US7037604B2 (en) 2002-07-23 2002-07-23 Magnetic sensing device
PCT/US2003/023389 WO2004015437A1 (en) 2002-07-23 2003-07-23 Magnetic sensing device

Publications (2)

Publication Number Publication Date
JP2005534193A JP2005534193A (ja) 2005-11-10
JP2005534193A5 true JP2005534193A5 (enExample) 2006-09-14

Family

ID=30769637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004527657A Withdrawn JP2005534193A (ja) 2002-07-23 2003-07-23 磁気検知装置

Country Status (8)

Country Link
US (1) US7037604B2 (enExample)
EP (1) EP1540362B1 (enExample)
JP (1) JP2005534193A (enExample)
CN (1) CN1672058A (enExample)
AU (1) AU2003265301A1 (enExample)
CA (1) CA2493438A1 (enExample)
DE (1) DE60327781D1 (enExample)
WO (1) WO2004015437A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040037818A1 (en) * 1998-07-30 2004-02-26 Brand Stephen J. Treatment for diabetes
US7239000B2 (en) * 2003-04-15 2007-07-03 Honeywell International Inc. Semiconductor device and magneto-resistive sensor integration
US6883241B2 (en) * 2003-07-31 2005-04-26 Medtronic, Inc. Compass-based indicator with magnetic shielding
US7126330B2 (en) * 2004-06-03 2006-10-24 Honeywell International, Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
KR20060021649A (ko) * 2004-09-03 2006-03-08 엘지전자 주식회사 고밀도 미세 패턴의 단락 도선 위치 검출을 위한 자기 센서
US7064558B1 (en) * 2004-12-16 2006-06-20 Honeywell International Inc. Millivolt output circuit for use with programmable sensor compensation integrated circuits
DE102005047414B4 (de) 2005-02-21 2012-01-05 Infineon Technologies Ag Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
US7545662B2 (en) * 2005-03-25 2009-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for magnetic shielding in semiconductor integrated circuit
DE602005017900D1 (de) * 2005-10-10 2010-01-07 Infineon Technologies Sensonor Niederfrequenzempfänger mit Magnetfelddetektor
TWI295102B (en) * 2006-01-13 2008-03-21 Ind Tech Res Inst Multi-functional substrate structure
SG135077A1 (en) * 2006-02-27 2007-09-28 Nanyang Polytechnic Apparatus and method for non-invasively sensing pulse rate and blood flow anomalies
BRPI0605714B1 (pt) * 2006-03-07 2018-06-26 José Gouveia Abrunhosa Jorge Dispositivo e processo para detecção de materiais magnéticos em sistemas antifurtos de tecnologia eletromagnética
EP2360489B1 (en) * 2010-02-04 2013-04-17 Nxp B.V. Magnetic field sensor
TWI467821B (zh) * 2010-12-31 2015-01-01 Voltafield Technology Corp 磁阻感測器及其製造方法
TWI443360B (zh) * 2011-02-22 2014-07-01 Voltafield Technology Corp 磁阻感測器及其製造方法
US20140347047A1 (en) * 2011-02-22 2014-11-27 Voltafield Technology Corporation Magnetoresistive sensor
ITTO20120614A1 (it) * 2012-07-11 2014-01-12 St Microelectronics Srl Sensore magnetoresistivo integrato multistrato e relativo metodo di fabbricazione
CN105929345A (zh) * 2013-03-26 2016-09-07 旭化成微电子株式会社 磁传感器及其磁检测方法
DE202013003631U1 (de) * 2013-04-18 2013-04-26 Steiner-Optik Gmbh Batteriefachschirmung
US9497846B2 (en) 2013-10-24 2016-11-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Plasma generator using spiral conductors
US10180341B2 (en) * 2013-10-24 2019-01-15 The United States Of America As Represented By The Administrator Of Nasa Multi-layer wireless sensor construct for use at electrically-conductive material surfaces
US10193228B2 (en) 2013-10-24 2019-01-29 The United States Of America As Represented By The Administrator Of Nasa Antenna for near field sensing and far field transceiving
CN103647022B (zh) * 2013-12-25 2016-04-27 杭州士兰集成电路有限公司 各向异性磁阻传感器垂直结构及其制造方法
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
CN106229406A (zh) * 2016-10-10 2016-12-14 杭州士兰集成电路有限公司 集成型磁开关及其制造方法
US10591320B2 (en) * 2017-12-11 2020-03-17 Nxp B.V. Magnetoresistive sensor with stray field cancellation and systems incorporating same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041780A (en) * 1988-09-13 1991-08-20 California Institute Of Technology Integrable current sensors
JPH02129882U (enExample) 1989-03-31 1990-10-25
US5247278A (en) * 1991-11-26 1993-09-21 Honeywell Inc. Magnetic field sensing device
US5570015A (en) * 1992-02-05 1996-10-29 Mitsubishi Denki Kabushiki Kaisha Linear positional displacement detector for detecting linear displacement of a permanent magnet as a change in direction of magnetic sensor unit
US5757591A (en) * 1996-11-25 1998-05-26 International Business Machines Corporation Magnetoresistive read/inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection and method for manufacturing same
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head
JPH11154309A (ja) * 1997-11-20 1999-06-08 Sony Corp 磁気抵抗効果型磁気ヘッド
US6048739A (en) * 1997-12-18 2000-04-11 Honeywell Inc. Method of manufacturing a high density magnetic memory device
US6072382A (en) * 1998-01-06 2000-06-06 Nonvolatile Electronics, Incorporated Spin dependent tunneling sensor
CN1451157A (zh) 1999-10-05 2003-10-22 西加特技术有限责任公司 用于保护磁阻磁头避免静电放电的集成板上器件和方法
US6462541B1 (en) 1999-11-12 2002-10-08 Nve Corporation Uniform sense condition magnetic field sensor using differential magnetoresistance
WO2001071713A1 (en) * 2000-03-22 2001-09-27 Nve Corporation Read heads in planar monolithic integrated circuit chips
US6717241B1 (en) * 2000-08-31 2004-04-06 Micron Technology, Inc. Magnetic shielding for integrated circuits
US6452253B1 (en) * 2000-08-31 2002-09-17 Micron Technology, Inc. Method and apparatus for magnetic shielding of an integrated circuit
US6515352B1 (en) * 2000-09-25 2003-02-04 Micron Technology, Inc. Shielding arrangement to protect a circuit from stray magnetic fields
JP3659898B2 (ja) * 2000-11-27 2005-06-15 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
JP2002184945A (ja) * 2000-12-11 2002-06-28 Fuji Electric Co Ltd 磁気素子一体型半導体デバイス
US6724027B2 (en) * 2002-04-18 2004-04-20 Hewlett-Packard Development Company, L.P. Magnetic shielding for MRAM devices
US6936763B2 (en) * 2002-06-28 2005-08-30 Freescale Semiconductor, Inc. Magnetic shielding for electronic circuits which include magnetic materials

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