CA2493438A1 - Magnetic sensing device - Google Patents
Magnetic sensing device Download PDFInfo
- Publication number
- CA2493438A1 CA2493438A1 CA002493438A CA2493438A CA2493438A1 CA 2493438 A1 CA2493438 A1 CA 2493438A1 CA 002493438 A CA002493438 A CA 002493438A CA 2493438 A CA2493438 A CA 2493438A CA 2493438 A1 CA2493438 A1 CA 2493438A1
- Authority
- CA
- Canada
- Prior art keywords
- magnetic
- integrated circuit
- sensing device
- layer
- magnetic sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 231
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000013011 mating Effects 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 8
- 229910000595 mu-metal Inorganic materials 0.000 claims description 7
- 229910000889 permalloy Inorganic materials 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017881 Cu—Ni—Fe Inorganic materials 0.000 description 1
- 238000006842 Henry reaction Methods 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/201,381 | 2002-07-23 | ||
| US10/201,381 US7037604B2 (en) | 2002-07-23 | 2002-07-23 | Magnetic sensing device |
| PCT/US2003/023389 WO2004015437A1 (en) | 2002-07-23 | 2003-07-23 | Magnetic sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2493438A1 true CA2493438A1 (en) | 2004-02-19 |
Family
ID=30769637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002493438A Abandoned CA2493438A1 (en) | 2002-07-23 | 2003-07-23 | Magnetic sensing device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7037604B2 (enExample) |
| EP (1) | EP1540362B1 (enExample) |
| JP (1) | JP2005534193A (enExample) |
| CN (1) | CN1672058A (enExample) |
| AU (1) | AU2003265301A1 (enExample) |
| CA (1) | CA2493438A1 (enExample) |
| DE (1) | DE60327781D1 (enExample) |
| WO (1) | WO2004015437A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040037818A1 (en) * | 1998-07-30 | 2004-02-26 | Brand Stephen J. | Treatment for diabetes |
| US7239000B2 (en) * | 2003-04-15 | 2007-07-03 | Honeywell International Inc. | Semiconductor device and magneto-resistive sensor integration |
| US6883241B2 (en) * | 2003-07-31 | 2005-04-26 | Medtronic, Inc. | Compass-based indicator with magnetic shielding |
| US7126330B2 (en) * | 2004-06-03 | 2006-10-24 | Honeywell International, Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
| KR20060021649A (ko) * | 2004-09-03 | 2006-03-08 | 엘지전자 주식회사 | 고밀도 미세 패턴의 단락 도선 위치 검출을 위한 자기 센서 |
| US7064558B1 (en) * | 2004-12-16 | 2006-06-20 | Honeywell International Inc. | Millivolt output circuit for use with programmable sensor compensation integrated circuits |
| DE102005047414B4 (de) | 2005-02-21 | 2012-01-05 | Infineon Technologies Ag | Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben |
| US7545662B2 (en) * | 2005-03-25 | 2009-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for magnetic shielding in semiconductor integrated circuit |
| DE602005017900D1 (de) * | 2005-10-10 | 2010-01-07 | Infineon Technologies Sensonor | Niederfrequenzempfänger mit Magnetfelddetektor |
| TWI295102B (en) * | 2006-01-13 | 2008-03-21 | Ind Tech Res Inst | Multi-functional substrate structure |
| SG135077A1 (en) * | 2006-02-27 | 2007-09-28 | Nanyang Polytechnic | Apparatus and method for non-invasively sensing pulse rate and blood flow anomalies |
| BRPI0605714B1 (pt) * | 2006-03-07 | 2018-06-26 | José Gouveia Abrunhosa Jorge | Dispositivo e processo para detecção de materiais magnéticos em sistemas antifurtos de tecnologia eletromagnética |
| EP2360489B1 (en) * | 2010-02-04 | 2013-04-17 | Nxp B.V. | Magnetic field sensor |
| TWI467821B (zh) * | 2010-12-31 | 2015-01-01 | Voltafield Technology Corp | 磁阻感測器及其製造方法 |
| TWI443360B (zh) * | 2011-02-22 | 2014-07-01 | Voltafield Technology Corp | 磁阻感測器及其製造方法 |
| US20140347047A1 (en) * | 2011-02-22 | 2014-11-27 | Voltafield Technology Corporation | Magnetoresistive sensor |
| ITTO20120614A1 (it) * | 2012-07-11 | 2014-01-12 | St Microelectronics Srl | Sensore magnetoresistivo integrato multistrato e relativo metodo di fabbricazione |
| EP2878966B1 (en) * | 2013-03-26 | 2017-07-26 | Asahi Kasei Microdevices Corporation | Magnetic sensor and magnetic detecting method |
| DE202013003631U1 (de) * | 2013-04-18 | 2013-04-26 | Steiner-Optik Gmbh | Batteriefachschirmung |
| US10180341B2 (en) * | 2013-10-24 | 2019-01-15 | The United States Of America As Represented By The Administrator Of Nasa | Multi-layer wireless sensor construct for use at electrically-conductive material surfaces |
| US10193228B2 (en) | 2013-10-24 | 2019-01-29 | The United States Of America As Represented By The Administrator Of Nasa | Antenna for near field sensing and far field transceiving |
| US9497846B2 (en) * | 2013-10-24 | 2016-11-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Plasma generator using spiral conductors |
| CN103647022B (zh) * | 2013-12-25 | 2016-04-27 | 杭州士兰集成电路有限公司 | 各向异性磁阻传感器垂直结构及其制造方法 |
| US10145906B2 (en) | 2015-12-17 | 2018-12-04 | Analog Devices Global | Devices, systems and methods including magnetic structures |
| CN106229406A (zh) * | 2016-10-10 | 2016-12-14 | 杭州士兰集成电路有限公司 | 集成型磁开关及其制造方法 |
| US10591320B2 (en) * | 2017-12-11 | 2020-03-17 | Nxp B.V. | Magnetoresistive sensor with stray field cancellation and systems incorporating same |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
| JPH02129882U (enExample) | 1989-03-31 | 1990-10-25 | ||
| US5247278A (en) * | 1991-11-26 | 1993-09-21 | Honeywell Inc. | Magnetic field sensing device |
| US5570015A (en) * | 1992-02-05 | 1996-10-29 | Mitsubishi Denki Kabushiki Kaisha | Linear positional displacement detector for detecting linear displacement of a permanent magnet as a change in direction of magnetic sensor unit |
| US5757591A (en) * | 1996-11-25 | 1998-05-26 | International Business Machines Corporation | Magnetoresistive read/inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection and method for manufacturing same |
| US5902690A (en) * | 1997-02-25 | 1999-05-11 | Motorola, Inc. | Stray magnetic shielding for a non-volatile MRAM |
| US5898548A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Shielded magnetic tunnel junction magnetoresistive read head |
| JPH11154309A (ja) * | 1997-11-20 | 1999-06-08 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
| US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
| US6072382A (en) * | 1998-01-06 | 2000-06-06 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling sensor |
| CN1451157A (zh) | 1999-10-05 | 2003-10-22 | 西加特技术有限责任公司 | 用于保护磁阻磁头避免静电放电的集成板上器件和方法 |
| US6462541B1 (en) | 1999-11-12 | 2002-10-08 | Nve Corporation | Uniform sense condition magnetic field sensor using differential magnetoresistance |
| WO2001071713A1 (en) * | 2000-03-22 | 2001-09-27 | Nve Corporation | Read heads in planar monolithic integrated circuit chips |
| US6452253B1 (en) * | 2000-08-31 | 2002-09-17 | Micron Technology, Inc. | Method and apparatus for magnetic shielding of an integrated circuit |
| US6717241B1 (en) * | 2000-08-31 | 2004-04-06 | Micron Technology, Inc. | Magnetic shielding for integrated circuits |
| US6515352B1 (en) * | 2000-09-25 | 2003-02-04 | Micron Technology, Inc. | Shielding arrangement to protect a circuit from stray magnetic fields |
| JP3659898B2 (ja) * | 2000-11-27 | 2005-06-15 | Ｔｄｋ株式会社 | 薄膜磁気ヘッドおよびその製造方法 |
| JP2002184945A (ja) * | 2000-12-11 | 2002-06-28 | Fuji Electric Co Ltd | 磁気素子一体型半導体デバイス |
| US6724027B2 (en) * | 2002-04-18 | 2004-04-20 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for MRAM devices |
| US6936763B2 (en) * | 2002-06-28 | 2005-08-30 | Freescale Semiconductor, Inc. | Magnetic shielding for electronic circuits which include magnetic materials |
-
2002
- 2002-07-23 US US10/201,381 patent/US7037604B2/en not_active Expired - Fee Related
-
2003
- 2003-07-23 CA CA002493438A patent/CA2493438A1/en not_active Abandoned
- 2003-07-23 WO PCT/US2003/023389 patent/WO2004015437A1/en not_active Ceased
- 2003-07-23 JP JP2004527657A patent/JP2005534193A/ja not_active Withdrawn
- 2003-07-23 DE DE60327781T patent/DE60327781D1/de not_active Expired - Fee Related
- 2003-07-23 AU AU2003265301A patent/AU2003265301A1/en not_active Abandoned
- 2003-07-23 CN CNA038175053A patent/CN1672058A/zh active Pending
- 2003-07-23 EP EP03784822A patent/EP1540362B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1540362A1 (en) | 2005-06-15 |
| US20040019272A1 (en) | 2004-01-29 |
| EP1540362B1 (en) | 2009-05-27 |
| DE60327781D1 (de) | 2009-07-09 |
| WO2004015437A1 (en) | 2004-02-19 |
| AU2003265301A1 (en) | 2004-02-25 |
| JP2005534193A (ja) | 2005-11-10 |
| US7037604B2 (en) | 2006-05-02 |
| CN1672058A (zh) | 2005-09-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |