CN1672058A - 磁检测装置 - Google Patents

磁检测装置 Download PDF

Info

Publication number
CN1672058A
CN1672058A CNA038175053A CN03817505A CN1672058A CN 1672058 A CN1672058 A CN 1672058A CN A038175053 A CNA038175053 A CN A038175053A CN 03817505 A CN03817505 A CN 03817505A CN 1672058 A CN1672058 A CN 1672058A
Authority
CN
China
Prior art keywords
magnetic
integrated circuit
detection device
layer
magnetic detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038175053A
Other languages
English (en)
Chinese (zh)
Inventor
W·F·维特克拉夫特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1672058A publication Critical patent/CN1672058A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
CNA038175053A 2002-07-23 2003-07-23 磁检测装置 Pending CN1672058A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/201,381 2002-07-23
US10/201,381 US7037604B2 (en) 2002-07-23 2002-07-23 Magnetic sensing device

Publications (1)

Publication Number Publication Date
CN1672058A true CN1672058A (zh) 2005-09-21

Family

ID=30769637

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038175053A Pending CN1672058A (zh) 2002-07-23 2003-07-23 磁检测装置

Country Status (8)

Country Link
US (1) US7037604B2 (enExample)
EP (1) EP1540362B1 (enExample)
JP (1) JP2005534193A (enExample)
CN (1) CN1672058A (enExample)
AU (1) AU2003265301A1 (enExample)
CA (1) CA2493438A1 (enExample)
DE (1) DE60327781D1 (enExample)
WO (1) WO2004015437A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378695A (zh) * 2006-02-27 2009-03-04 南洋理工学院 无创传感脉率和血流异常的装置和方法
CN101401134B (zh) * 2006-03-07 2010-09-29 豪尔赫·何塞·古维亚·阿布伦霍萨 在电子商品防盗（eas）电磁系统中用于磁物质检测的装置和方法
CN102147452A (zh) * 2010-02-04 2011-08-10 Nxp股份有限公司 磁场传感器
CN102544351A (zh) * 2010-12-31 2012-07-04 宇能电科技股份有限公司 磁阻传感器及其制造方法
CN103647022A (zh) * 2013-12-25 2014-03-19 杭州士兰集成电路有限公司 各向异性磁阻传感器垂直结构及其制造方法
CN105143955A (zh) * 2013-04-18 2015-12-09 施泰纳光学有限公司 电池箱的屏蔽装置
CN105929345A (zh) * 2013-03-26 2016-09-07 旭化成微电子株式会社 磁传感器及其磁检测方法
CN109917309A (zh) * 2017-12-11 2019-06-21 恩智浦有限公司 具有杂散场抵消的磁阻式传感器及并有此类传感器的系统

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040037818A1 (en) * 1998-07-30 2004-02-26 Brand Stephen J. Treatment for diabetes
US7239000B2 (en) * 2003-04-15 2007-07-03 Honeywell International Inc. Semiconductor device and magneto-resistive sensor integration
US6883241B2 (en) * 2003-07-31 2005-04-26 Medtronic, Inc. Compass-based indicator with magnetic shielding
US7126330B2 (en) * 2004-06-03 2006-10-24 Honeywell International, Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
KR20060021649A (ko) * 2004-09-03 2006-03-08 엘지전자 주식회사 고밀도 미세 패턴의 단락 도선 위치 검출을 위한 자기 센서
US7064558B1 (en) * 2004-12-16 2006-06-20 Honeywell International Inc. Millivolt output circuit for use with programmable sensor compensation integrated circuits
DE102005047414B4 (de) 2005-02-21 2012-01-05 Infineon Technologies Ag Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
US7545662B2 (en) * 2005-03-25 2009-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for magnetic shielding in semiconductor integrated circuit
DE602005017900D1 (de) * 2005-10-10 2010-01-07 Infineon Technologies Sensonor Niederfrequenzempfänger mit Magnetfelddetektor
TWI295102B (en) * 2006-01-13 2008-03-21 Ind Tech Res Inst Multi-functional substrate structure
TWI443360B (zh) * 2011-02-22 2014-07-01 Voltafield Technology Corp 磁阻感測器及其製造方法
US20140347047A1 (en) * 2011-02-22 2014-11-27 Voltafield Technology Corporation Magnetoresistive sensor
ITTO20120614A1 (it) * 2012-07-11 2014-01-12 St Microelectronics Srl Sensore magnetoresistivo integrato multistrato e relativo metodo di fabbricazione
US9497846B2 (en) * 2013-10-24 2016-11-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Plasma generator using spiral conductors
US10193228B2 (en) 2013-10-24 2019-01-29 The United States Of America As Represented By The Administrator Of Nasa Antenna for near field sensing and far field transceiving
US10180341B2 (en) * 2013-10-24 2019-01-15 The United States Of America As Represented By The Administrator Of Nasa Multi-layer wireless sensor construct for use at electrically-conductive material surfaces
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
CN106229406A (zh) * 2016-10-10 2016-12-14 杭州士兰集成电路有限公司 集成型磁开关及其制造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041780A (en) * 1988-09-13 1991-08-20 California Institute Of Technology Integrable current sensors
JPH02129882U (enExample) 1989-03-31 1990-10-25
US5247278A (en) * 1991-11-26 1993-09-21 Honeywell Inc. Magnetic field sensing device
US5570015A (en) * 1992-02-05 1996-10-29 Mitsubishi Denki Kabushiki Kaisha Linear positional displacement detector for detecting linear displacement of a permanent magnet as a change in direction of magnetic sensor unit
US5757591A (en) * 1996-11-25 1998-05-26 International Business Machines Corporation Magnetoresistive read/inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection and method for manufacturing same
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
US6404191B2 (en) * 1997-08-08 2002-06-11 Nve Corporation Read heads in planar monolithic integrated circuit chips
US5898548A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Shielded magnetic tunnel junction magnetoresistive read head
JPH11154309A (ja) * 1997-11-20 1999-06-08 Sony Corp 磁気抵抗効果型磁気ヘッド
US6048739A (en) * 1997-12-18 2000-04-11 Honeywell Inc. Method of manufacturing a high density magnetic memory device
US6072382A (en) * 1998-01-06 2000-06-06 Nonvolatile Electronics, Incorporated Spin dependent tunneling sensor
JP2003520419A (ja) 1999-10-05 2003-07-02 シーゲイト テクノロジー エルエルシー 静電放電から磁気抵抗ヘッドを保護するための基板集積型デバイスと方法
US6462541B1 (en) 1999-11-12 2002-10-08 Nve Corporation Uniform sense condition magnetic field sensor using differential magnetoresistance
US6452253B1 (en) * 2000-08-31 2002-09-17 Micron Technology, Inc. Method and apparatus for magnetic shielding of an integrated circuit
US6717241B1 (en) * 2000-08-31 2004-04-06 Micron Technology, Inc. Magnetic shielding for integrated circuits
US6515352B1 (en) * 2000-09-25 2003-02-04 Micron Technology, Inc. Shielding arrangement to protect a circuit from stray magnetic fields
JP3659898B2 (ja) * 2000-11-27 2005-06-15 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
JP2002184945A (ja) * 2000-12-11 2002-06-28 Fuji Electric Co Ltd 磁気素子一体型半導体デバイス
US6724027B2 (en) * 2002-04-18 2004-04-20 Hewlett-Packard Development Company, L.P. Magnetic shielding for MRAM devices
US6936763B2 (en) * 2002-06-28 2005-08-30 Freescale Semiconductor, Inc. Magnetic shielding for electronic circuits which include magnetic materials

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378695A (zh) * 2006-02-27 2009-03-04 南洋理工学院 无创传感脉率和血流异常的装置和方法
CN101401134B (zh) * 2006-03-07 2010-09-29 豪尔赫·何塞·古维亚·阿布伦霍萨 在电子商品防盗（eas）电磁系统中用于磁物质检测的装置和方法
CN102147452A (zh) * 2010-02-04 2011-08-10 Nxp股份有限公司 磁场传感器
US8564287B2 (en) 2010-02-04 2013-10-22 Nxp B.V. Magnetic field sensor
CN102147452B (zh) * 2010-02-04 2013-11-20 Nxp股份有限公司 磁场传感器
CN102544351A (zh) * 2010-12-31 2012-07-04 宇能电科技股份有限公司 磁阻传感器及其制造方法
CN105929345A (zh) * 2013-03-26 2016-09-07 旭化成微电子株式会社 磁传感器及其磁检测方法
CN105143955A (zh) * 2013-04-18 2015-12-09 施泰纳光学有限公司 电池箱的屏蔽装置
CN103647022A (zh) * 2013-12-25 2014-03-19 杭州士兰集成电路有限公司 各向异性磁阻传感器垂直结构及其制造方法
CN103647022B (zh) * 2013-12-25 2016-04-27 杭州士兰集成电路有限公司 各向异性磁阻传感器垂直结构及其制造方法
CN109917309A (zh) * 2017-12-11 2019-06-21 恩智浦有限公司 具有杂散场抵消的磁阻式传感器及并有此类传感器的系统
CN109917309B (zh) * 2017-12-11 2023-06-30 恩智浦有限公司 具有杂散场抵消的磁阻式传感器及并有此类传感器的系统

Also Published As

Publication number Publication date
CA2493438A1 (en) 2004-02-19
EP1540362B1 (en) 2009-05-27
AU2003265301A1 (en) 2004-02-25
US7037604B2 (en) 2006-05-02
WO2004015437A1 (en) 2004-02-19
DE60327781D1 (de) 2009-07-09
US20040019272A1 (en) 2004-01-29
JP2005534193A (ja) 2005-11-10
EP1540362A1 (en) 2005-06-15

Similar Documents

Publication Publication Date Title
CN1672058A (zh) 磁检测装置
JP4105142B2 (ja) 電流センサ
EP1720027B1 (en) Magnetic field detector and current detection device, position detection device and rotation detection device using the magnetic field detector
Daughton et al. Magnetic field sensors using GMR multilayer
US7394240B2 (en) Current sensor
US7642768B1 (en) Current sensor having field screening arrangement including electrical conductors sandwiching magnetic permeability layer
US20060012459A1 (en) Sensor and method for measuring a current of charged particles
JP2009250931A (ja) 磁気センサおよびその動作方法、および磁気センサシステム
JP4741152B2 (ja) 磁場を測定する装置および磁場を測定する装置を作製する方法
US11340317B2 (en) Magnetic sensor device
KR19990022160A (ko) 자기 저항성 브리지 소자의 브리지 회로를 포함하는자장 센서
US7064649B2 (en) Magneto-resistive layer arrangement and gradiometer with said layer arrangement
Olson et al. Integrating giant magnetoresistive current and thermal sensors in power electronic modules
US12481014B2 (en) Hybrid Hall-effect/Magnetoresistance (MR) magnetometer with self-calibration
JP2012063203A (ja) 磁気センサ
US20230066358A1 (en) Strayfield insensitive magnetic sensing device and method using spin orbit torque effect
JP2013047610A (ja) 磁気平衡式電流センサ
JP3067484B2 (ja) 磁気式位置、回転検出用素子
KR20050019925A (ko) 자기 센싱 장치
Schmidtpeter et al. Exchange-Biased multi-ring Planar Hall Magnetoresistive Sensors with nT resolution in Non-Shielded Environments
US20040096700A1 (en) Magnetic sensor system
JP7244157B1 (ja) 磁気センサおよび磁気検出方法
JPH10270775A (ja) 磁気抵抗効果素子及びそれを用いた回転センサ
CN120403717A (zh) 磁传感器
JP2004271323A (ja) 漏洩磁場検出装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20050921