JP2005532620A - フラッシュメモリ用の保持電源 - Google Patents

フラッシュメモリ用の保持電源 Download PDF

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Publication number
JP2005532620A
JP2005532620A JP2004518198A JP2004518198A JP2005532620A JP 2005532620 A JP2005532620 A JP 2005532620A JP 2004518198 A JP2004518198 A JP 2004518198A JP 2004518198 A JP2004518198 A JP 2004518198A JP 2005532620 A JP2005532620 A JP 2005532620A
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JP
Japan
Prior art keywords
power supply
power
holding
flash memory
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004518198A
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English (en)
Japanese (ja)
Other versions
JP2005532620A5 (enExample
Inventor
オット，ウィリアム・イー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2005532620A publication Critical patent/JP2005532620A/ja
Publication of JP2005532620A5 publication Critical patent/JP2005532620A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Power Sources (AREA)
JP2004518198A 2002-07-01 2003-06-30 フラッシュメモリ用の保持電源 Pending JP2005532620A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/186,516 US6735117B2 (en) 2002-07-01 2002-07-01 Hold-up power supply for flash memory
PCT/US2003/020797 WO2004003928A2 (en) 2002-07-01 2003-06-30 Backup power supply for flash memory

Publications (2)

Publication Number Publication Date
JP2005532620A true JP2005532620A (ja) 2005-10-27
JP2005532620A5 JP2005532620A5 (enExample) 2006-07-27

Family

ID=29779909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004518198A Pending JP2005532620A (ja) 2002-07-01 2003-06-30 フラッシュメモリ用の保持電源

Country Status (6)

Country Link
US (1) US6735117B2 (enExample)
EP (1) EP1530795B1 (enExample)
JP (1) JP2005532620A (enExample)
AU (1) AU2003256361A1 (enExample)
DE (1) DE60327325D1 (enExample)
WO (1) WO2004003928A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006163753A (ja) * 2004-12-07 2006-06-22 Hitachi Ulsi Systems Co Ltd 記憶装置
JP2011108219A (ja) * 2009-10-19 2011-06-02 Ricoh Co Ltd 電源制御装置、画像形成装置および電源制御方法
JP2011210322A (ja) * 2010-03-30 2011-10-20 Panasonic Corp フラッシュメモリ用電源装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
DE102007052107B4 (de) * 2006-11-02 2017-09-21 Hitachi, Ltd. Elektronische Steuerungseinrichtung und Verfahren zum Eintragen von Backup-Daten in dieselbe
CN201075737Y (zh) 2007-07-20 2008-06-18 忆正存储技术(深圳)有限公司 一种掉电保护电路
JP2009181624A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 不揮発性半導体記憶装置
TWI451424B (zh) * 2009-04-17 2014-09-01 Mstar Semiconductor Inc 應用於快閃記憶體之保護電路及電源系統
US8228753B2 (en) 2009-07-29 2012-07-24 Stec, Inc. System and method of maintaining data integrity in a flash storage device
DE102010011749B4 (de) * 2010-03-17 2018-05-03 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur FRAM-Spannungsversorgungsverwaltung
ITMI20111201A1 (it) * 2011-06-29 2012-12-30 St Microelectronics Srl Sistema di controllo per dispositivo di memoria
US8767354B1 (en) * 2011-12-08 2014-07-01 Western Digital Technologies, Inc. Data storage device employing cascaded voltage regulators during power failure
US8957655B2 (en) * 2012-03-16 2015-02-17 Micrel, Inc. Last gasp hold-up circuit using adaptive constant on time control
CN103366815A (zh) * 2012-04-06 2013-10-23 鸿富锦精密工业（深圳）有限公司 断电保护电路及具有该断电保护电路的电子装置
CN103762966A (zh) * 2014-01-10 2014-04-30 美的集团股份有限公司 掉电记忆电路及其掉电记忆方法
US10497404B2 (en) * 2014-10-03 2019-12-03 Hewlett-Packard Development Company, L.P. Clamping circuit
FR3041807B1 (fr) 2015-09-24 2017-12-08 Stmicroelectronics Rousset Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant
US10521305B2 (en) 2016-04-29 2019-12-31 Toshiba Memory Corporation Holdup time measurement for solid state drives
CN107402520A (zh) * 2016-05-18 2017-11-28 佛山市顺德区美的电热电器制造有限公司 烹饪电器及其掉电控制方法、启动控制方法
US12301745B2 (en) * 2021-11-24 2025-05-13 Visual Defence Inc. Hybrid smart phone smart camera system based on methods and system for modifying a smart phone
TWI806628B (zh) * 2022-05-25 2023-06-21 瑞昱半導體股份有限公司 固態硬碟控制器與電路控制器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438549A (en) * 1994-02-28 1995-08-01 Intel Corporation Nonvolatile memory with volatile memory buffer and a backup power supply system
US5608684A (en) * 1994-10-13 1997-03-04 Hewlett-Packard Company System and method for RAM power and data backup utilizing a capacitor and ROM
US5768208A (en) * 1996-06-18 1998-06-16 Microchip Technology Incorporated Fail safe non-volatile memory programming system and method therefor
JP3916837B2 (ja) * 2000-03-10 2007-05-23 株式会社東芝 強誘電体メモリ
JP2002007000A (ja) * 2000-06-27 2002-01-11 Toshiba Tec Corp 電子機器
US6862651B2 (en) * 2000-12-20 2005-03-01 Microsoft Corporation Automotive computing devices with emergency power shut down capabilities

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006163753A (ja) * 2004-12-07 2006-06-22 Hitachi Ulsi Systems Co Ltd 記憶装置
JP2011108219A (ja) * 2009-10-19 2011-06-02 Ricoh Co Ltd 電源制御装置、画像形成装置および電源制御方法
JP2011210322A (ja) * 2010-03-30 2011-10-20 Panasonic Corp フラッシュメモリ用電源装置

Also Published As

Publication number Publication date
US6735117B2 (en) 2004-05-11
AU2003256361A1 (en) 2004-01-19
DE60327325D1 (de) 2009-06-04
AU2003256361A8 (en) 2004-01-19
EP1530795B1 (en) 2009-04-22
EP1530795A2 (en) 2005-05-18
WO2004003928A3 (en) 2004-10-28
US20040001359A1 (en) 2004-01-01
WO2004003928A2 (en) 2004-01-08

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