AU2003256361A1 - Backup power supply for flash memory - Google Patents

Backup power supply for flash memory

Info

Publication number
AU2003256361A1
AU2003256361A1 AU2003256361A AU2003256361A AU2003256361A1 AU 2003256361 A1 AU2003256361 A1 AU 2003256361A1 AU 2003256361 A AU2003256361 A AU 2003256361A AU 2003256361 A AU2003256361 A AU 2003256361A AU 2003256361 A1 AU2003256361 A1 AU 2003256361A1
Authority
AU
Australia
Prior art keywords
power supply
flash memory
backup power
backup
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003256361A
Other languages
English (en)
Other versions
AU2003256361A8 (en
Inventor
William E. Ott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003256361A1 publication Critical patent/AU2003256361A1/en
Publication of AU2003256361A8 publication Critical patent/AU2003256361A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Power Sources (AREA)
AU2003256361A 2002-07-01 2003-06-30 Backup power supply for flash memory Abandoned AU2003256361A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/186,516 US6735117B2 (en) 2002-07-01 2002-07-01 Hold-up power supply for flash memory
US10/186,516 2002-07-01
PCT/US2003/020797 WO2004003928A2 (en) 2002-07-01 2003-06-30 Backup power supply for flash memory

Publications (2)

Publication Number Publication Date
AU2003256361A1 true AU2003256361A1 (en) 2004-01-19
AU2003256361A8 AU2003256361A8 (en) 2004-01-19

Family

ID=29779909

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003256361A Abandoned AU2003256361A1 (en) 2002-07-01 2003-06-30 Backup power supply for flash memory

Country Status (6)

Country Link
US (1) US6735117B2 (enExample)
EP (1) EP1530795B1 (enExample)
JP (1) JP2005532620A (enExample)
AU (1) AU2003256361A1 (enExample)
DE (1) DE60327325D1 (enExample)
WO (1) WO2004003928A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4748563B2 (ja) * 2004-12-07 2011-08-17 株式会社日立超エル・エス・アイ・システムズ 記憶装置
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
DE102007052107B4 (de) * 2006-11-02 2017-09-21 Hitachi, Ltd. Elektronische Steuerungseinrichtung und Verfahren zum Eintragen von Backup-Daten in dieselbe
CN201075737Y (zh) 2007-07-20 2008-06-18 忆正存储技术(深圳)有限公司 一种掉电保护电路
JP2009181624A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 不揮発性半導体記憶装置
TWI451424B (zh) * 2009-04-17 2014-09-01 Mstar Semiconductor Inc 應用於快閃記憶體之保護電路及電源系統
US8228753B2 (en) 2009-07-29 2012-07-24 Stec, Inc. System and method of maintaining data integrity in a flash storage device
JP5556405B2 (ja) * 2009-10-19 2014-07-23 株式会社リコー 電源制御装置、画像形成装置および電源制御方法
DE102010011749B4 (de) * 2010-03-17 2018-05-03 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur FRAM-Spannungsversorgungsverwaltung
JP5381864B2 (ja) * 2010-03-30 2014-01-08 パナソニック株式会社 フラッシュメモリ用電源装置
ITMI20111201A1 (it) * 2011-06-29 2012-12-30 St Microelectronics Srl Sistema di controllo per dispositivo di memoria
US8767354B1 (en) * 2011-12-08 2014-07-01 Western Digital Technologies, Inc. Data storage device employing cascaded voltage regulators during power failure
US8957655B2 (en) * 2012-03-16 2015-02-17 Micrel, Inc. Last gasp hold-up circuit using adaptive constant on time control
CN103366815A (zh) * 2012-04-06 2013-10-23 鸿富锦精密工业（深圳）有限公司 断电保护电路及具有该断电保护电路的电子装置
CN103762966A (zh) * 2014-01-10 2014-04-30 美的集团股份有限公司 掉电记忆电路及其掉电记忆方法
US10497404B2 (en) * 2014-10-03 2019-12-03 Hewlett-Packard Development Company, L.P. Clamping circuit
FR3041807B1 (fr) 2015-09-24 2017-12-08 Stmicroelectronics Rousset Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant
US10521305B2 (en) 2016-04-29 2019-12-31 Toshiba Memory Corporation Holdup time measurement for solid state drives
CN107402520A (zh) * 2016-05-18 2017-11-28 佛山市顺德区美的电热电器制造有限公司 烹饪电器及其掉电控制方法、启动控制方法
US12301745B2 (en) * 2021-11-24 2025-05-13 Visual Defence Inc. Hybrid smart phone smart camera system based on methods and system for modifying a smart phone
TWI806628B (zh) * 2022-05-25 2023-06-21 瑞昱半導體股份有限公司 固態硬碟控制器與電路控制器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438549A (en) * 1994-02-28 1995-08-01 Intel Corporation Nonvolatile memory with volatile memory buffer and a backup power supply system
US5608684A (en) * 1994-10-13 1997-03-04 Hewlett-Packard Company System and method for RAM power and data backup utilizing a capacitor and ROM
US5768208A (en) * 1996-06-18 1998-06-16 Microchip Technology Incorporated Fail safe non-volatile memory programming system and method therefor
JP3916837B2 (ja) * 2000-03-10 2007-05-23 株式会社東芝 強誘電体メモリ
JP2002007000A (ja) * 2000-06-27 2002-01-11 Toshiba Tec Corp 電子機器
US6862651B2 (en) * 2000-12-20 2005-03-01 Microsoft Corporation Automotive computing devices with emergency power shut down capabilities

Also Published As

Publication number Publication date
US6735117B2 (en) 2004-05-11
JP2005532620A (ja) 2005-10-27
DE60327325D1 (de) 2009-06-04
AU2003256361A8 (en) 2004-01-19
EP1530795B1 (en) 2009-04-22
EP1530795A2 (en) 2005-05-18
WO2004003928A3 (en) 2004-10-28
US20040001359A1 (en) 2004-01-01
WO2004003928A2 (en) 2004-01-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase