JP2005529190A5 - - Google Patents
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- JP2005529190A5 JP2005529190A5 JP2003561015A JP2003561015A JP2005529190A5 JP 2005529190 A5 JP2005529190 A5 JP 2005529190A5 JP 2003561015 A JP2003561015 A JP 2003561015A JP 2003561015 A JP2003561015 A JP 2003561015A JP 2005529190 A5 JP2005529190 A5 JP 2005529190A5
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- JP
- Japan
- Prior art keywords
- aryl
- formula
- composition
- oligomer
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 claims description 70
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 59
- 229920001187 thermosetting polymer Polymers 0.000 claims description 53
- 125000003118 aryl group Chemical group 0.000 claims description 47
- 229920000642 polymer Polymers 0.000 claims description 38
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 30
- 125000000217 alkyl group Chemical group 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 29
- 239000000178 monomer Substances 0.000 claims description 29
- 239000003361 porogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 27
- 125000003107 substituted aryl group Chemical group 0.000 claims description 26
- ZICQBHNGXDOVJF-UHFFFAOYSA-N diamantane Chemical compound C1C2C3CC(C4)CC2C2C4C3CC1C2 ZICQBHNGXDOVJF-UHFFFAOYSA-N 0.000 claims description 22
- 229910052736 halogen Inorganic materials 0.000 claims description 17
- 150000002367 halogens Chemical class 0.000 claims description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 17
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 239000002318 adhesion promoter Substances 0.000 claims description 12
- 125000002947 alkylene group Chemical group 0.000 claims description 12
- 125000000732 arylene group Chemical group 0.000 claims description 12
- 125000001072 heteroaryl group Chemical group 0.000 claims description 12
- 125000001424 substituent group Chemical group 0.000 claims description 12
- 229920002554 vinyl polymer Polymers 0.000 claims description 12
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 11
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 125000000524 functional group Chemical group 0.000 claims description 10
- 239000013638 trimer Substances 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000000304 alkynyl group Chemical group 0.000 claims description 9
- 150000008378 aryl ethers Chemical class 0.000 claims description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 9
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 9
- 125000005020 hydroxyalkenyl group Chemical group 0.000 claims description 9
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 9
- 125000005016 hydroxyalkynyl group Chemical group 0.000 claims description 9
- 125000005027 hydroxyaryl group Chemical group 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 9
- 230000001588 bifunctional effect Effects 0.000 claims description 8
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 8
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 5
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- FUCXRENHTUFVDM-UHFFFAOYSA-N 1-ethylcyclohexan-1-amine Chemical compound CCC1(N)CCCCC1 FUCXRENHTUFVDM-UHFFFAOYSA-N 0.000 claims description 3
- QXSWHQGIEKUBAS-UHFFFAOYSA-N 1-ethynyl-4-fluorobenzene Chemical group FC1=CC=C(C#C)C=C1 QXSWHQGIEKUBAS-UHFFFAOYSA-N 0.000 claims description 3
- AODMJIOEGCBUQL-UHFFFAOYSA-N 3-ethynylphenol Chemical group OC1=CC=CC(C#C)=C1 AODMJIOEGCBUQL-UHFFFAOYSA-N 0.000 claims description 3
- JXYITCJMBRETQX-UHFFFAOYSA-N 4-ethynylaniline Chemical compound NC1=CC=C(C#C)C=C1 JXYITCJMBRETQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004305 biphenyl Chemical group 0.000 claims description 3
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- 229920001519 homopolymer Polymers 0.000 claims description 3
- 125000000962 organic group Chemical group 0.000 claims description 3
- 229920001610 polycaprolactone Polymers 0.000 claims description 3
- 239000004632 polycaprolactone Substances 0.000 claims description 3
- 229920003257 polycarbosilane Polymers 0.000 claims description 3
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 claims description 3
- 125000004417 unsaturated alkyl group Chemical group 0.000 claims description 3
- 239000000539 dimer Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 0 I=C1C=CC*C1 Chemical compound I=C1C=CC*C1 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35018702P | 2002-01-15 | 2002-01-15 | |
| US35055702P | 2002-01-22 | 2002-01-22 | |
| US35301102P | 2002-01-30 | 2002-01-30 | |
| US37621902P | 2002-04-29 | 2002-04-29 | |
| US37842402P | 2002-05-07 | 2002-05-07 | |
| US10/158,548 US6740685B2 (en) | 2001-05-30 | 2002-05-30 | Organic compositions |
| PCT/US2003/000972 WO2003061029A2 (en) | 2002-01-15 | 2003-01-14 | Organic compositions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005529190A JP2005529190A (ja) | 2005-09-29 |
| JP2005529190A5 true JP2005529190A5 (https=) | 2006-03-23 |
Family
ID=27558469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003561015A Withdrawn JP2005529190A (ja) | 2002-01-15 | 2003-01-14 | 有機組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6740685B2 (https=) |
| EP (1) | EP1466355A2 (https=) |
| JP (1) | JP2005529190A (https=) |
| KR (1) | KR20040083080A (https=) |
| CN (1) | CN1643670A (https=) |
| AU (1) | AU2003224597A1 (https=) |
| WO (1) | WO2003061029A2 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7141188B2 (en) * | 2001-05-30 | 2006-11-28 | Honeywell International Inc. | Organic compositions |
| US7060204B2 (en) * | 2002-04-29 | 2006-06-13 | Honeywell International Inc. | Organic compositions |
| US20050090596A1 (en) * | 2002-05-30 | 2005-04-28 | Apen Paul G. | Organic composition |
| US6878641B2 (en) * | 2002-10-01 | 2005-04-12 | Advanced Technology Materials, Inc. | Composition and chemical vapor deposition method for forming organic low k dielectric films |
| US7187081B2 (en) * | 2003-01-29 | 2007-03-06 | International Business Machines Corporation | Polycarbosilane buried etch stops in interconnect structures |
| US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US7217648B2 (en) * | 2004-12-22 | 2007-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-ESL porogen burn-out for copper ELK integration |
| US7531209B2 (en) | 2005-02-24 | 2009-05-12 | Michael Raymond Ayers | Porous films and bodies with enhanced mechanical strength |
| JP2006253577A (ja) * | 2005-03-14 | 2006-09-21 | Fuji Photo Film Co Ltd | 絶縁膜、その製造方法及び該絶縁膜を有するデバイス |
| JP4542927B2 (ja) * | 2005-03-17 | 2010-09-15 | 富士フイルム株式会社 | 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス |
| JP2007031663A (ja) * | 2005-07-29 | 2007-02-08 | Fujifilm Corp | 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス |
| US7482265B2 (en) * | 2006-01-10 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV curing of low-k porous dielectrics |
| US20070195682A1 (en) * | 2006-02-21 | 2007-08-23 | Duerig Urs T | Method for high density data storage and imaging |
| US8102753B2 (en) * | 2006-02-21 | 2012-01-24 | International Business Machines Corporation | Method for forming deformed regions in a resin layer |
| US7919188B2 (en) | 2006-05-31 | 2011-04-05 | Roskilde Semiconductor Llc | Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials |
| US7790234B2 (en) | 2006-05-31 | 2010-09-07 | Michael Raymond Ayers | Low dielectric constant materials prepared from soluble fullerene clusters |
| US7875315B2 (en) | 2006-05-31 | 2011-01-25 | Roskilde Semiconductor Llc | Porous inorganic solids for use as low dielectric constant materials |
| US7883742B2 (en) | 2006-05-31 | 2011-02-08 | Roskilde Semiconductor Llc | Porous materials derived from polymer composites |
| US20080076903A1 (en) * | 2006-08-31 | 2008-03-27 | Duerig Urs T | Data storage medium and method for high density data storage |
| CN100462383C (zh) * | 2006-12-29 | 2009-02-18 | 西安交通大学 | 一种分子主链含有金刚烷结构环氧树脂的合成方法 |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| JP5113466B2 (ja) * | 2007-09-27 | 2013-01-09 | 富士フイルム株式会社 | 絶縁膜の製造方法、及び、絶縁膜 |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP5407836B2 (ja) * | 2009-12-18 | 2014-02-05 | 住友ベークライト株式会社 | 膜形成用組成物、絶縁膜および半導体装置 |
| JP5407851B2 (ja) * | 2009-12-25 | 2014-02-05 | 住友ベークライト株式会社 | 膜形成用組成物、絶縁膜および半導体装置 |
| US8889544B2 (en) * | 2011-02-16 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dielectric protection layer as a chemical-mechanical polishing stop layer |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US9330989B2 (en) | 2012-09-28 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for chemical-mechanical planarization of a metal layer |
| KR102168174B1 (ko) | 2014-03-19 | 2020-10-20 | 삼성전자주식회사 | 니켈 화합물 및 이를 이용한 박막 형성 방법 |
| US11236196B2 (en) | 2014-11-18 | 2022-02-01 | Rensselaer Polytechnic Institute | Polymers and methods for their manufacture |
| WO2016081432A1 (en) * | 2014-11-18 | 2016-05-26 | Rensselaer Polytechnic Institute | Novel polymers and methods for their manufacture |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| CN106152108B (zh) * | 2016-08-29 | 2018-08-03 | 苏州龙杰特种纤维股份有限公司 | 一种联苯热加入系统 |
| WO2018119020A1 (en) | 2016-12-20 | 2018-06-28 | Rensselaer Polytechnic Institute | Proton exchange membrane material and methods of making the same |
| US20200238272A1 (en) | 2017-07-06 | 2020-07-30 | Rensselaer Polytechnic Institute | Ionic functionalization of aromatic polymers for ion exchange membranes |
| US12448508B2 (en) | 2018-04-24 | 2025-10-21 | Rensselaer Polytechnic Institute | Crosslinking of aromatic polymers for anion exchange membranes |
| US11787987B2 (en) | 2018-07-23 | 2023-10-17 | Xerox Corporation | Adhesive with substrate compatibilizing particles |
| CN113366680B (zh) | 2018-11-26 | 2024-06-07 | 伦斯勒理工学院 | 磷酸根阴离子-季铵离子对配位的聚合物膜 |
| EP4065753A1 (en) | 2019-11-25 | 2022-10-05 | Twelve Benefit Corporation | Membrane electrode assembly for co x reduction |
| US20210206939A1 (en) * | 2020-01-02 | 2021-07-08 | Palo Alto Research Center Incorporated | Transparent, colorless, porous polymers derived from multiphasic polymer networks |
| US11465139B2 (en) | 2020-03-20 | 2022-10-11 | Rensselaer Polytechnic Institute | Thermally stable hydrocarbon-based anion exchange membrane and ionomers |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3563919A (en) * | 1969-03-25 | 1971-02-16 | Sun Oil Co | Copolymers of adamantane and benzene |
| US6323249B1 (en) * | 1988-09-26 | 2001-11-27 | Purolite International, Ltd. | Macroporous resins having large pores but with high crush strength |
| US5053434A (en) * | 1989-10-25 | 1991-10-01 | Mobil Oil Corporation | Diamondoid polymeric compositions |
| JP2531906B2 (ja) * | 1991-09-13 | 1996-09-04 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 発泡重合体 |
| US5347063A (en) * | 1993-03-09 | 1994-09-13 | Mobil Oil Corporation | Method for direct arylation of diamondoids |
| US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
| JP3415741B2 (ja) * | 1997-03-31 | 2003-06-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
| WO2000031183A1 (en) | 1998-11-24 | 2000-06-02 | The Dow Chemical Company | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom |
| US6172128B1 (en) * | 1999-04-09 | 2001-01-09 | Honeywell International Inc. | Nanoporous polymers crosslinked via cyclic structures |
| US6156812A (en) * | 1999-04-09 | 2000-12-05 | Honeywell International Inc. | Nanoporous material fabricated using polymeric template strands |
| US6146749A (en) * | 1999-05-03 | 2000-11-14 | Jsr Corporation | Low dielectric composition, insulating material, sealing material, and circuit board |
| US6214746B1 (en) * | 1999-05-07 | 2001-04-10 | Honeywell International Inc. | Nanoporous material fabricated using a dissolvable reagent |
| US6268072B1 (en) * | 1999-10-01 | 2001-07-31 | Eastman Kodak Company | Electroluminescent devices having phenylanthracene-based polymers |
| US6171687B1 (en) * | 1999-10-18 | 2001-01-09 | Honeywell International Inc. | Infiltrated nanoporous materials and methods of producing same |
| US6107357A (en) * | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
| US6342454B1 (en) * | 1999-11-16 | 2002-01-29 | International Business Machines Corporation | Electronic devices with dielectric compositions and method for their manufacture |
| US6359091B1 (en) * | 1999-11-22 | 2002-03-19 | The Dow Chemical Company | Polyarylene compositions with enhanced modulus profiles |
| US6509415B1 (en) * | 2000-04-07 | 2003-01-21 | Honeywell International Inc. | Low dielectric constant organic dielectrics based on cage-like structures |
| US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
| US6423811B1 (en) * | 2000-07-19 | 2002-07-23 | Honeywell International Inc. | Low dielectric constant materials with polymeric networks |
| US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
-
2002
- 2002-05-30 US US10/158,548 patent/US6740685B2/en not_active Expired - Fee Related
-
2003
- 2003-01-14 AU AU2003224597A patent/AU2003224597A1/en not_active Abandoned
- 2003-01-14 WO PCT/US2003/000972 patent/WO2003061029A2/en not_active Ceased
- 2003-01-14 KR KR10-2004-7011023A patent/KR20040083080A/ko not_active Withdrawn
- 2003-01-14 JP JP2003561015A patent/JP2005529190A/ja not_active Withdrawn
- 2003-01-14 EP EP03721273A patent/EP1466355A2/en not_active Withdrawn
- 2003-01-14 CN CNA038059444A patent/CN1643670A/zh active Pending
- 2003-12-12 US US10/735,579 patent/US20050020702A1/en not_active Abandoned
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