KR20040083080A - 유기 조성물 - Google Patents
유기 조성물 Download PDFInfo
- Publication number
- KR20040083080A KR20040083080A KR10-2004-7011023A KR20047011023A KR20040083080A KR 20040083080 A KR20040083080 A KR 20040083080A KR 20047011023 A KR20047011023 A KR 20047011023A KR 20040083080 A KR20040083080 A KR 20040083080A
- Authority
- KR
- South Korea
- Prior art keywords
- formula
- aryl
- adamantane
- composition
- oligomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 0 C*1[C@@](C2)(CC3)CC33C12C3(C)C1C(C2)C(*3)C3C2C1 Chemical compound C*1[C@@](C2)(CC3)CC33C12C3(C)C1C(C2)C(*3)C3C2C1 0.000 description 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/10—Preparation of halogenated hydrocarbons by replacement by halogens of hydrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/26—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
- C07C17/263—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
- C07C17/266—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of hydrocarbons and halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/18—Polycyclic aromatic halogenated hydrocarbons
- C07C25/22—Polycyclic aromatic halogenated hydrocarbons with condensed rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/24—Halogenated aromatic hydrocarbons with unsaturated side chains
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/695—Organic materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Laminated Bodies (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35018702P | 2002-01-15 | 2002-01-15 | |
| US60/350,187 | 2002-01-15 | ||
| US35055702P | 2002-01-22 | 2002-01-22 | |
| US60/350,557 | 2002-01-22 | ||
| US35301102P | 2002-01-30 | 2002-01-30 | |
| US60/353,011 | 2002-01-30 | ||
| US37621902P | 2002-04-29 | 2002-04-29 | |
| US60/376,219 | 2002-04-29 | ||
| US37842402P | 2002-05-07 | 2002-05-07 | |
| US60/378,424 | 2002-05-07 | ||
| US10/158,548 US6740685B2 (en) | 2001-05-30 | 2002-05-30 | Organic compositions |
| US10/158,548 | 2002-05-30 | ||
| US60/ | 2002-10-30 | ||
| PCT/US2003/000972 WO2003061029A2 (en) | 2002-01-15 | 2003-01-14 | Organic compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040083080A true KR20040083080A (ko) | 2004-09-30 |
Family
ID=27558469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7011023A Withdrawn KR20040083080A (ko) | 2002-01-15 | 2003-01-14 | 유기 조성물 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6740685B2 (https=) |
| EP (1) | EP1466355A2 (https=) |
| JP (1) | JP2005529190A (https=) |
| KR (1) | KR20040083080A (https=) |
| CN (1) | CN1643670A (https=) |
| AU (1) | AU2003224597A1 (https=) |
| WO (1) | WO2003061029A2 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7141188B2 (en) * | 2001-05-30 | 2006-11-28 | Honeywell International Inc. | Organic compositions |
| US7060204B2 (en) * | 2002-04-29 | 2006-06-13 | Honeywell International Inc. | Organic compositions |
| US20050090596A1 (en) * | 2002-05-30 | 2005-04-28 | Apen Paul G. | Organic composition |
| US6878641B2 (en) * | 2002-10-01 | 2005-04-12 | Advanced Technology Materials, Inc. | Composition and chemical vapor deposition method for forming organic low k dielectric films |
| US7187081B2 (en) * | 2003-01-29 | 2007-03-06 | International Business Machines Corporation | Polycarbosilane buried etch stops in interconnect structures |
| US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US7217648B2 (en) * | 2004-12-22 | 2007-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-ESL porogen burn-out for copper ELK integration |
| US7531209B2 (en) | 2005-02-24 | 2009-05-12 | Michael Raymond Ayers | Porous films and bodies with enhanced mechanical strength |
| JP2006253577A (ja) * | 2005-03-14 | 2006-09-21 | Fuji Photo Film Co Ltd | 絶縁膜、その製造方法及び該絶縁膜を有するデバイス |
| JP4542927B2 (ja) * | 2005-03-17 | 2010-09-15 | 富士フイルム株式会社 | 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス |
| JP2007031663A (ja) * | 2005-07-29 | 2007-02-08 | Fujifilm Corp | 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス |
| US7482265B2 (en) * | 2006-01-10 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV curing of low-k porous dielectrics |
| US20070195682A1 (en) * | 2006-02-21 | 2007-08-23 | Duerig Urs T | Method for high density data storage and imaging |
| US8102753B2 (en) * | 2006-02-21 | 2012-01-24 | International Business Machines Corporation | Method for forming deformed regions in a resin layer |
| US7919188B2 (en) | 2006-05-31 | 2011-04-05 | Roskilde Semiconductor Llc | Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials |
| US7790234B2 (en) | 2006-05-31 | 2010-09-07 | Michael Raymond Ayers | Low dielectric constant materials prepared from soluble fullerene clusters |
| US7875315B2 (en) | 2006-05-31 | 2011-01-25 | Roskilde Semiconductor Llc | Porous inorganic solids for use as low dielectric constant materials |
| US7883742B2 (en) | 2006-05-31 | 2011-02-08 | Roskilde Semiconductor Llc | Porous materials derived from polymer composites |
| US20080076903A1 (en) * | 2006-08-31 | 2008-03-27 | Duerig Urs T | Data storage medium and method for high density data storage |
| CN100462383C (zh) * | 2006-12-29 | 2009-02-18 | 西安交通大学 | 一种分子主链含有金刚烷结构环氧树脂的合成方法 |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| JP5113466B2 (ja) * | 2007-09-27 | 2013-01-09 | 富士フイルム株式会社 | 絶縁膜の製造方法、及び、絶縁膜 |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP5407836B2 (ja) * | 2009-12-18 | 2014-02-05 | 住友ベークライト株式会社 | 膜形成用組成物、絶縁膜および半導体装置 |
| JP5407851B2 (ja) * | 2009-12-25 | 2014-02-05 | 住友ベークライト株式会社 | 膜形成用組成物、絶縁膜および半導体装置 |
| US8889544B2 (en) * | 2011-02-16 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dielectric protection layer as a chemical-mechanical polishing stop layer |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US9330989B2 (en) | 2012-09-28 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for chemical-mechanical planarization of a metal layer |
| KR102168174B1 (ko) | 2014-03-19 | 2020-10-20 | 삼성전자주식회사 | 니켈 화합물 및 이를 이용한 박막 형성 방법 |
| US11236196B2 (en) | 2014-11-18 | 2022-02-01 | Rensselaer Polytechnic Institute | Polymers and methods for their manufacture |
| WO2016081432A1 (en) * | 2014-11-18 | 2016-05-26 | Rensselaer Polytechnic Institute | Novel polymers and methods for their manufacture |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| CN106152108B (zh) * | 2016-08-29 | 2018-08-03 | 苏州龙杰特种纤维股份有限公司 | 一种联苯热加入系统 |
| WO2018119020A1 (en) | 2016-12-20 | 2018-06-28 | Rensselaer Polytechnic Institute | Proton exchange membrane material and methods of making the same |
| US20200238272A1 (en) | 2017-07-06 | 2020-07-30 | Rensselaer Polytechnic Institute | Ionic functionalization of aromatic polymers for ion exchange membranes |
| US12448508B2 (en) | 2018-04-24 | 2025-10-21 | Rensselaer Polytechnic Institute | Crosslinking of aromatic polymers for anion exchange membranes |
| US11787987B2 (en) | 2018-07-23 | 2023-10-17 | Xerox Corporation | Adhesive with substrate compatibilizing particles |
| CN113366680B (zh) | 2018-11-26 | 2024-06-07 | 伦斯勒理工学院 | 磷酸根阴离子-季铵离子对配位的聚合物膜 |
| EP4065753A1 (en) | 2019-11-25 | 2022-10-05 | Twelve Benefit Corporation | Membrane electrode assembly for co x reduction |
| US20210206939A1 (en) * | 2020-01-02 | 2021-07-08 | Palo Alto Research Center Incorporated | Transparent, colorless, porous polymers derived from multiphasic polymer networks |
| US11465139B2 (en) | 2020-03-20 | 2022-10-11 | Rensselaer Polytechnic Institute | Thermally stable hydrocarbon-based anion exchange membrane and ionomers |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3563919A (en) * | 1969-03-25 | 1971-02-16 | Sun Oil Co | Copolymers of adamantane and benzene |
| US6323249B1 (en) * | 1988-09-26 | 2001-11-27 | Purolite International, Ltd. | Macroporous resins having large pores but with high crush strength |
| US5053434A (en) * | 1989-10-25 | 1991-10-01 | Mobil Oil Corporation | Diamondoid polymeric compositions |
| JP2531906B2 (ja) * | 1991-09-13 | 1996-09-04 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 発泡重合体 |
| US5347063A (en) * | 1993-03-09 | 1994-09-13 | Mobil Oil Corporation | Method for direct arylation of diamondoids |
| US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
| JP3415741B2 (ja) * | 1997-03-31 | 2003-06-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
| WO2000031183A1 (en) | 1998-11-24 | 2000-06-02 | The Dow Chemical Company | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom |
| US6172128B1 (en) * | 1999-04-09 | 2001-01-09 | Honeywell International Inc. | Nanoporous polymers crosslinked via cyclic structures |
| US6156812A (en) * | 1999-04-09 | 2000-12-05 | Honeywell International Inc. | Nanoporous material fabricated using polymeric template strands |
| US6146749A (en) * | 1999-05-03 | 2000-11-14 | Jsr Corporation | Low dielectric composition, insulating material, sealing material, and circuit board |
| US6214746B1 (en) * | 1999-05-07 | 2001-04-10 | Honeywell International Inc. | Nanoporous material fabricated using a dissolvable reagent |
| US6268072B1 (en) * | 1999-10-01 | 2001-07-31 | Eastman Kodak Company | Electroluminescent devices having phenylanthracene-based polymers |
| US6171687B1 (en) * | 1999-10-18 | 2001-01-09 | Honeywell International Inc. | Infiltrated nanoporous materials and methods of producing same |
| US6107357A (en) * | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
| US6342454B1 (en) * | 1999-11-16 | 2002-01-29 | International Business Machines Corporation | Electronic devices with dielectric compositions and method for their manufacture |
| US6359091B1 (en) * | 1999-11-22 | 2002-03-19 | The Dow Chemical Company | Polyarylene compositions with enhanced modulus profiles |
| US6509415B1 (en) * | 2000-04-07 | 2003-01-21 | Honeywell International Inc. | Low dielectric constant organic dielectrics based on cage-like structures |
| US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
| US6423811B1 (en) * | 2000-07-19 | 2002-07-23 | Honeywell International Inc. | Low dielectric constant materials with polymeric networks |
| US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
-
2002
- 2002-05-30 US US10/158,548 patent/US6740685B2/en not_active Expired - Fee Related
-
2003
- 2003-01-14 AU AU2003224597A patent/AU2003224597A1/en not_active Abandoned
- 2003-01-14 WO PCT/US2003/000972 patent/WO2003061029A2/en not_active Ceased
- 2003-01-14 KR KR10-2004-7011023A patent/KR20040083080A/ko not_active Withdrawn
- 2003-01-14 JP JP2003561015A patent/JP2005529190A/ja not_active Withdrawn
- 2003-01-14 EP EP03721273A patent/EP1466355A2/en not_active Withdrawn
- 2003-01-14 CN CNA038059444A patent/CN1643670A/zh active Pending
- 2003-12-12 US US10/735,579 patent/US20050020702A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US6740685B2 (en) | 2004-05-25 |
| US20030114598A1 (en) | 2003-06-19 |
| AU2003224597A1 (en) | 2003-07-30 |
| EP1466355A2 (en) | 2004-10-13 |
| CN1643670A (zh) | 2005-07-20 |
| JP2005529190A (ja) | 2005-09-29 |
| AU2003224597A8 (en) | 2003-07-30 |
| WO2003061029A2 (en) | 2003-07-24 |
| US20050020702A1 (en) | 2005-01-27 |
| WO2003061029A3 (en) | 2004-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20040715 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |