CN1643670A - 有机组合物 - Google Patents

有机组合物 Download PDF

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Publication number
CN1643670A
CN1643670A CNA038059444A CN03805944A CN1643670A CN 1643670 A CN1643670 A CN 1643670A CN A038059444 A CNA038059444 A CN A038059444A CN 03805944 A CN03805944 A CN 03805944A CN 1643670 A CN1643670 A CN 1643670A
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CN
China
Prior art keywords
formula
adamantane
aryl
composition
oligomer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038059444A
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English (en)
Chinese (zh)
Inventor
B·李
E·J·苏里范
K·S·劳
P·G·阿彭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1643670A publication Critical patent/CN1643670A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/26Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00Preparation of halogenated hydrocarbons
    • C07C17/093Preparation of halogenated hydrocarbons by replacement by halogens
    • C07C17/10Preparation of halogenated hydrocarbons by replacement by halogens of hydrogen atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00Preparation of halogenated hydrocarbons
    • C07C17/26Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
    • C07C17/263Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
    • C07C17/266Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of hydrocarbons and halogenated hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/18Polycyclic aromatic halogenated hydrocarbons
    • C07C25/22Polycyclic aromatic halogenated hydrocarbons with condensed rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/24Halogenated aromatic hydrocarbons with unsaturated side chains
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/695Organic materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/024Dielectric details, e.g. changing the dielectric material around a transmission line
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665Porous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Laminated Bodies (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CNA038059444A 2002-01-15 2003-01-14 有机组合物 Pending CN1643670A (zh)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,548 US6740685B2 (en) 2001-05-30 2002-05-30 Organic compositions
US10/158,548 2002-05-30

Publications (1)

Publication Number Publication Date
CN1643670A true CN1643670A (zh) 2005-07-20

Family

ID=27558469

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038059444A Pending CN1643670A (zh) 2002-01-15 2003-01-14 有机组合物

Country Status (7)

Country Link
US (2) US6740685B2 (https=)
EP (1) EP1466355A2 (https=)
JP (1) JP2005529190A (https=)
KR (1) KR20040083080A (https=)
CN (1) CN1643670A (https=)
AU (1) AU2003224597A1 (https=)
WO (1) WO2003061029A2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141188B2 (en) * 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
US7060204B2 (en) * 2002-04-29 2006-06-13 Honeywell International Inc. Organic compositions
US20050090596A1 (en) * 2002-05-30 2005-04-28 Apen Paul G. Organic composition
US6878641B2 (en) * 2002-10-01 2005-04-12 Advanced Technology Materials, Inc. Composition and chemical vapor deposition method for forming organic low k dielectric films
US7187081B2 (en) * 2003-01-29 2007-03-06 International Business Machines Corporation Polycarbosilane buried etch stops in interconnect structures
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7217648B2 (en) * 2004-12-22 2007-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Post-ESL porogen burn-out for copper ELK integration
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP2006253577A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 絶縁膜、その製造方法及び該絶縁膜を有するデバイス
JP4542927B2 (ja) * 2005-03-17 2010-09-15 富士フイルム株式会社 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
US7482265B2 (en) * 2006-01-10 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. UV curing of low-k porous dielectrics
US20070195682A1 (en) * 2006-02-21 2007-08-23 Duerig Urs T Method for high density data storage and imaging
US8102753B2 (en) * 2006-02-21 2012-01-24 International Business Machines Corporation Method for forming deformed regions in a resin layer
US7919188B2 (en) 2006-05-31 2011-04-05 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
US20080076903A1 (en) * 2006-08-31 2008-03-27 Duerig Urs T Data storage medium and method for high density data storage
CN100462383C (zh) * 2006-12-29 2009-02-18 西安交通大学 一种分子主链含有金刚烷结构环氧树脂的合成方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5113466B2 (ja) * 2007-09-27 2013-01-09 富士フイルム株式会社 絶縁膜の製造方法、及び、絶縁膜
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5407836B2 (ja) * 2009-12-18 2014-02-05 住友ベークライト株式会社 膜形成用組成物、絶縁膜および半導体装置
JP5407851B2 (ja) * 2009-12-25 2014-02-05 住友ベークライト株式会社 膜形成用組成物、絶縁膜および半導体装置
US8889544B2 (en) * 2011-02-16 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric protection layer as a chemical-mechanical polishing stop layer
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9330989B2 (en) 2012-09-28 2016-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for chemical-mechanical planarization of a metal layer
KR102168174B1 (ko) 2014-03-19 2020-10-20 삼성전자주식회사 니켈 화합물 및 이를 이용한 박막 형성 방법
US11236196B2 (en) 2014-11-18 2022-02-01 Rensselaer Polytechnic Institute Polymers and methods for their manufacture
WO2016081432A1 (en) * 2014-11-18 2016-05-26 Rensselaer Polytechnic Institute Novel polymers and methods for their manufacture
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
CN106152108B (zh) * 2016-08-29 2018-08-03 苏州龙杰特种纤维股份有限公司 一种联苯热加入系统
WO2018119020A1 (en) 2016-12-20 2018-06-28 Rensselaer Polytechnic Institute Proton exchange membrane material and methods of making the same
US20200238272A1 (en) 2017-07-06 2020-07-30 Rensselaer Polytechnic Institute Ionic functionalization of aromatic polymers for ion exchange membranes
US12448508B2 (en) 2018-04-24 2025-10-21 Rensselaer Polytechnic Institute Crosslinking of aromatic polymers for anion exchange membranes
US11787987B2 (en) 2018-07-23 2023-10-17 Xerox Corporation Adhesive with substrate compatibilizing particles
CN113366680B (zh) 2018-11-26 2024-06-07 伦斯勒理工学院 磷酸根阴离子-季铵离子对配位的聚合物膜
EP4065753A1 (en) 2019-11-25 2022-10-05 Twelve Benefit Corporation Membrane electrode assembly for co x reduction
US20210206939A1 (en) * 2020-01-02 2021-07-08 Palo Alto Research Center Incorporated Transparent, colorless, porous polymers derived from multiphasic polymer networks
US11465139B2 (en) 2020-03-20 2022-10-11 Rensselaer Polytechnic Institute Thermally stable hydrocarbon-based anion exchange membrane and ionomers

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563919A (en) * 1969-03-25 1971-02-16 Sun Oil Co Copolymers of adamantane and benzene
US6323249B1 (en) * 1988-09-26 2001-11-27 Purolite International, Ltd. Macroporous resins having large pores but with high crush strength
US5053434A (en) * 1989-10-25 1991-10-01 Mobil Oil Corporation Diamondoid polymeric compositions
JP2531906B2 (ja) * 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
US5347063A (en) * 1993-03-09 1994-09-13 Mobil Oil Corporation Method for direct arylation of diamondoids
US5895263A (en) * 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
WO2000031183A1 (en) 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
US6172128B1 (en) * 1999-04-09 2001-01-09 Honeywell International Inc. Nanoporous polymers crosslinked via cyclic structures
US6156812A (en) * 1999-04-09 2000-12-05 Honeywell International Inc. Nanoporous material fabricated using polymeric template strands
US6146749A (en) * 1999-05-03 2000-11-14 Jsr Corporation Low dielectric composition, insulating material, sealing material, and circuit board
US6214746B1 (en) * 1999-05-07 2001-04-10 Honeywell International Inc. Nanoporous material fabricated using a dissolvable reagent
US6268072B1 (en) * 1999-10-01 2001-07-31 Eastman Kodak Company Electroluminescent devices having phenylanthracene-based polymers
US6171687B1 (en) * 1999-10-18 2001-01-09 Honeywell International Inc. Infiltrated nanoporous materials and methods of producing same
US6107357A (en) * 1999-11-16 2000-08-22 International Business Machines Corporatrion Dielectric compositions and method for their manufacture
US6342454B1 (en) * 1999-11-16 2002-01-29 International Business Machines Corporation Electronic devices with dielectric compositions and method for their manufacture
US6359091B1 (en) * 1999-11-22 2002-03-19 The Dow Chemical Company Polyarylene compositions with enhanced modulus profiles
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
US6271273B1 (en) * 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
US6451712B1 (en) * 2000-12-18 2002-09-17 International Business Machines Corporation Method for forming a porous dielectric material layer in a semiconductor device and device formed

Also Published As

Publication number Publication date
US6740685B2 (en) 2004-05-25
US20030114598A1 (en) 2003-06-19
AU2003224597A1 (en) 2003-07-30
EP1466355A2 (en) 2004-10-13
KR20040083080A (ko) 2004-09-30
JP2005529190A (ja) 2005-09-29
AU2003224597A8 (en) 2003-07-30
WO2003061029A2 (en) 2003-07-24
US20050020702A1 (en) 2005-01-27
WO2003061029A3 (en) 2004-03-18

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