JP2005529190A - 有機組成物 - Google Patents

有機組成物 Download PDF

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Publication number
JP2005529190A
JP2005529190A JP2003561015A JP2003561015A JP2005529190A JP 2005529190 A JP2005529190 A JP 2005529190A JP 2003561015 A JP2003561015 A JP 2003561015A JP 2003561015 A JP2003561015 A JP 2003561015A JP 2005529190 A JP2005529190 A JP 2005529190A
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JP
Japan
Prior art keywords
formula
aryl
adamantane
composition
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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JP2003561015A
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English (en)
Japanese (ja)
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JP2005529190A5 (https=
Inventor
リー，ボー
サリヴァン，エドワード・ジェイ
ロー，クライスラー・エス
エイペン，ポール・ジー
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Honeywell International Inc
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Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2005529190A publication Critical patent/JP2005529190A/ja
Publication of JP2005529190A5 publication Critical patent/JP2005529190A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00—Preparation of halogenated hydrocarbons
    • C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
    • C07C17/10—Preparation of halogenated hydrocarbons by replacement by halogens of hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00—Preparation of halogenated hydrocarbons
    • C07C17/26—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
    • C07C17/263—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
    • C07C17/266—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of hydrocarbons and halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/18—Polycyclic aromatic halogenated hydrocarbons
    • C07C25/22—Polycyclic aromatic halogenated hydrocarbons with condensed rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/24—Halogenated aromatic hydrocarbons with unsaturated side chains
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Laminated Bodies (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
JP2003561015A 2002-01-15 2003-01-14 有機組成物 Withdrawn JP2005529190A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US35055702P 2002-01-22 2002-01-22
US35301102P 2002-01-30 2002-01-30
US37621902P 2002-04-29 2002-04-29
US37842402P 2002-05-07 2002-05-07
US10/158,548 US6740685B2 (en) 2001-05-30 2002-05-30 Organic compositions
PCT/US2003/000972 WO2003061029A2 (en) 2002-01-15 2003-01-14 Organic compositions

Publications (2)

Publication Number Publication Date
JP2005529190A true JP2005529190A (ja) 2005-09-29
JP2005529190A5 JP2005529190A5 (https=) 2006-03-23

Family

ID=27558469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003561015A Withdrawn JP2005529190A (ja) 2002-01-15 2003-01-14 有機組成物

Country Status (7)

Country Link
US (2) US6740685B2 (https=)
EP (1) EP1466355A2 (https=)
JP (1) JP2005529190A (https=)
KR (1) KR20040083080A (https=)
CN (1) CN1643670A (https=)
AU (1) AU2003224597A1 (https=)
WO (1) WO2003061029A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081332A (ja) * 2007-09-27 2009-04-16 Fujifilm Corp 絶縁膜の製造方法、及び、絶縁膜
JP2011129789A (ja) * 2009-12-18 2011-06-30 Sumitomo Bakelite Co Ltd 膜形成用組成物、絶縁膜および半導体装置
JP2011138821A (ja) * 2009-12-25 2011-07-14 Sumitomo Bakelite Co Ltd 膜形成用組成物、絶縁膜および半導体装置

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US7141188B2 (en) * 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
US7060204B2 (en) * 2002-04-29 2006-06-13 Honeywell International Inc. Organic compositions
US20050090596A1 (en) * 2002-05-30 2005-04-28 Apen Paul G. Organic composition
US6878641B2 (en) * 2002-10-01 2005-04-12 Advanced Technology Materials, Inc. Composition and chemical vapor deposition method for forming organic low k dielectric films
US7187081B2 (en) * 2003-01-29 2007-03-06 International Business Machines Corporation Polycarbosilane buried etch stops in interconnect structures
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7217648B2 (en) * 2004-12-22 2007-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Post-ESL porogen burn-out for copper ELK integration
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP2006253577A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 絶縁膜、その製造方法及び該絶縁膜を有するデバイス
JP4542927B2 (ja) * 2005-03-17 2010-09-15 富士フイルム株式会社 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
US7482265B2 (en) * 2006-01-10 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. UV curing of low-k porous dielectrics
US20070195682A1 (en) * 2006-02-21 2007-08-23 Duerig Urs T Method for high density data storage and imaging
US8102753B2 (en) * 2006-02-21 2012-01-24 International Business Machines Corporation Method for forming deformed regions in a resin layer
US7919188B2 (en) 2006-05-31 2011-04-05 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
US20080076903A1 (en) * 2006-08-31 2008-03-27 Duerig Urs T Data storage medium and method for high density data storage
CN100462383C (zh) * 2006-12-29 2009-02-18 西安交通大学 一种分子主链含有金刚烷结构环氧树脂的合成方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8889544B2 (en) * 2011-02-16 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric protection layer as a chemical-mechanical polishing stop layer
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9330989B2 (en) 2012-09-28 2016-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for chemical-mechanical planarization of a metal layer
KR102168174B1 (ko) 2014-03-19 2020-10-20 삼성전자주식회사 니켈 화합물 및 이를 이용한 박막 형성 방법
US11236196B2 (en) 2014-11-18 2022-02-01 Rensselaer Polytechnic Institute Polymers and methods for their manufacture
WO2016081432A1 (en) * 2014-11-18 2016-05-26 Rensselaer Polytechnic Institute Novel polymers and methods for their manufacture
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
CN106152108B (zh) * 2016-08-29 2018-08-03 苏州龙杰特种纤维股份有限公司 一种联苯热加入系统
WO2018119020A1 (en) 2016-12-20 2018-06-28 Rensselaer Polytechnic Institute Proton exchange membrane material and methods of making the same
US20200238272A1 (en) 2017-07-06 2020-07-30 Rensselaer Polytechnic Institute Ionic functionalization of aromatic polymers for ion exchange membranes
US12448508B2 (en) 2018-04-24 2025-10-21 Rensselaer Polytechnic Institute Crosslinking of aromatic polymers for anion exchange membranes
US11787987B2 (en) 2018-07-23 2023-10-17 Xerox Corporation Adhesive with substrate compatibilizing particles
CN113366680B (zh) 2018-11-26 2024-06-07 伦斯勒理工学院 磷酸根阴离子-季铵离子对配位的聚合物膜
EP4065753A1 (en) 2019-11-25 2022-10-05 Twelve Benefit Corporation Membrane electrode assembly for co x reduction
US20210206939A1 (en) * 2020-01-02 2021-07-08 Palo Alto Research Center Incorporated Transparent, colorless, porous polymers derived from multiphasic polymer networks
US11465139B2 (en) 2020-03-20 2022-10-11 Rensselaer Polytechnic Institute Thermally stable hydrocarbon-based anion exchange membrane and ionomers

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US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081332A (ja) * 2007-09-27 2009-04-16 Fujifilm Corp 絶縁膜の製造方法、及び、絶縁膜
JP2011129789A (ja) * 2009-12-18 2011-06-30 Sumitomo Bakelite Co Ltd 膜形成用組成物、絶縁膜および半導体装置
JP2011138821A (ja) * 2009-12-25 2011-07-14 Sumitomo Bakelite Co Ltd 膜形成用組成物、絶縁膜および半導体装置

Also Published As

Publication number Publication date
US6740685B2 (en) 2004-05-25
US20030114598A1 (en) 2003-06-19
AU2003224597A1 (en) 2003-07-30
EP1466355A2 (en) 2004-10-13
KR20040083080A (ko) 2004-09-30
CN1643670A (zh) 2005-07-20
AU2003224597A8 (en) 2003-07-30
WO2003061029A2 (en) 2003-07-24
US20050020702A1 (en) 2005-01-27
WO2003061029A3 (en) 2004-03-18

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