JP2005517530A - 常圧プラズマ洗浄装置 - Google Patents
常圧プラズマ洗浄装置 Download PDFInfo
- Publication number
- JP2005517530A JP2005517530A JP2003569341A JP2003569341A JP2005517530A JP 2005517530 A JP2005517530 A JP 2005517530A JP 2003569341 A JP2003569341 A JP 2003569341A JP 2003569341 A JP2003569341 A JP 2003569341A JP 2005517530 A JP2005517530 A JP 2005517530A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- reaction gas
- atmospheric pressure
- gas supply
- pressure plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 87
- 239000012495 reaction gas Substances 0.000 claims abstract description 156
- 239000007789 gas Substances 0.000 claims abstract description 100
- 230000005684 electric field Effects 0.000 claims abstract description 30
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004071 soot Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000255777 Lepidoptera Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning In General (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0009068A KR100466016B1 (ko) | 2002-02-20 | 2002-02-20 | 반도체 상압 플라즈마 세정장치 |
KR10-2003-0008312A KR100483063B1 (ko) | 2002-02-20 | 2003-02-10 | 상압 플라즈마 세정장치 |
PCT/KR2003/000343 WO2003070390A2 (fr) | 2002-02-20 | 2003-02-20 | Appareil de nettoyage utilisant un plasma a pression atmospherique |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005517530A true JP2005517530A (ja) | 2005-06-16 |
Family
ID=27759801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003569341A Pending JP2005517530A (ja) | 2002-02-20 | 2003-02-20 | 常圧プラズマ洗浄装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2005517530A (fr) |
AU (1) | AU2003208625A1 (fr) |
TW (1) | TW591714B (fr) |
WO (1) | WO2003070390A2 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101172163B1 (ko) * | 2010-06-24 | 2012-08-07 | 현대하이스코 주식회사 | 연료전지용 분리판 및 그 제조 방법 |
RU2649695C1 (ru) * | 2017-06-21 | 2018-04-04 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ очистки подложек из ситалла в струе высокочастотной плазмы пониженного давления |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0280074B1 (fr) * | 1987-02-24 | 1995-12-20 | International Business Machines Corporation | Réacteur à plasma |
US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
JP2845773B2 (ja) * | 1995-04-27 | 1999-01-13 | 山形日本電気株式会社 | 常圧cvd装置 |
US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
WO2000070117A1 (fr) * | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Dispositif de flux de plasma a grande plage de pressions compatible a basse temperature |
AU2434201A (en) * | 1999-12-15 | 2001-06-25 | Plasmasol Corp. | Segmented electrode capillary discharge, non-thermal plasma apparatus and process for promoting chemical reactions |
-
2003
- 2003-02-19 TW TW092103453A patent/TW591714B/zh not_active IP Right Cessation
- 2003-02-20 JP JP2003569341A patent/JP2005517530A/ja active Pending
- 2003-02-20 WO PCT/KR2003/000343 patent/WO2003070390A2/fr active Application Filing
- 2003-02-20 AU AU2003208625A patent/AU2003208625A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2003208625A8 (en) | 2003-09-09 |
TW591714B (en) | 2004-06-11 |
WO2003070390A2 (fr) | 2003-08-28 |
TW200303582A (en) | 2003-09-01 |
AU2003208625A1 (en) | 2003-09-09 |
WO2003070390A3 (fr) | 2003-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6424091B1 (en) | Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus | |
JP4409439B2 (ja) | 大気圧プラズマを利用した表面処理装置 | |
CN102592936B (zh) | 聚焦环和具有该聚焦环的基板处理装置 | |
JP2004259484A (ja) | プラズマプロセス装置 | |
KR100749406B1 (ko) | 불용방전 방지를 위한 전극 구조를 갖는 대기압 플라즈마발생장치 | |
KR100723019B1 (ko) | 표면처리를 위한 플라즈마 발생 장치 | |
KR100988291B1 (ko) | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마 표면처리 장치 | |
JP4161533B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP2005517530A (ja) | 常圧プラズマ洗浄装置 | |
JP4016540B2 (ja) | プラズマ処理システム | |
US6917508B2 (en) | Apparatus for manufacturing semiconductor device | |
JP4075237B2 (ja) | プラズマ処理システム及びプラズマ処理方法 | |
KR100483063B1 (ko) | 상압 플라즈마 세정장치 | |
JP3489351B2 (ja) | 表面処理装置およびその表面処理方法 | |
KR100988290B1 (ko) | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마표면처리 장치 | |
KR100561194B1 (ko) | 대기압 플라즈마 시스템 | |
KR20050051287A (ko) | 대기압 플라즈마 시스템 | |
KR100760651B1 (ko) | 처리가스 공급관을 구비하는 기판 표면처리장치 | |
KR100755517B1 (ko) | 대기압 리모트 플라스마를 이용한 고밀도 플라스마발생장치 | |
KR100707730B1 (ko) | 슬롯형 리모트 대기압 플라즈마 반응기 | |
JPH04259210A (ja) | 半導体装置の製造方法 | |
WO2004079812A1 (fr) | Procede et dispositif ameliores pour elimination de contaminants sur la surface d'un substrat | |
JP2003168596A (ja) | 放電プラズマ電極及びそれを用いた放電プラズマ処理装置 | |
JP2004097966A (ja) | 洗浄処理方法 | |
JP2007087872A (ja) | プラズマ表面処理方法および装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070420 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070529 |