JP2005516613A5 - - Google Patents

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Publication number
JP2005516613A5
JP2005516613A5 JP2003566169A JP2003566169A JP2005516613A5 JP 2005516613 A5 JP2005516613 A5 JP 2005516613A5 JP 2003566169 A JP2003566169 A JP 2003566169A JP 2003566169 A JP2003566169 A JP 2003566169A JP 2005516613 A5 JP2005516613 A5 JP 2005516613A5
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JP
Japan
Prior art keywords
seq
amino acid
nucleotide sequence
acid sequence
group
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Pending
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JP2003566169A
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English (en)
Japanese (ja)
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JP2005516613A (ja
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Priority claimed from PCT/US2003/003534 external-priority patent/WO2003066818A2/en
Publication of JP2005516613A publication Critical patent/JP2005516613A/ja
Publication of JP2005516613A5 publication Critical patent/JP2005516613A5/ja
Pending legal-status Critical Current

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JP2003566169A 2002-02-08 2003-02-06 バチルス・クラウジにおける分泌、転写、及び胞子形成遺伝子 Pending JP2005516613A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35525802P 2002-02-08 2002-02-08
PCT/US2003/003534 WO2003066818A2 (en) 2002-02-08 2003-02-06 Secretion, transcription and sporulation genes in bacillus clausii

Publications (2)

Publication Number Publication Date
JP2005516613A JP2005516613A (ja) 2005-06-09
JP2005516613A5 true JP2005516613A5 (enExample) 2006-03-09

Family

ID=27734490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003566169A Pending JP2005516613A (ja) 2002-02-08 2003-02-06 バチルス・クラウジにおける分泌、転写、及び胞子形成遺伝子

Country Status (6)

Country Link
US (4) US7247450B2 (enExample)
EP (1) EP1487853A4 (enExample)
JP (1) JP2005516613A (enExample)
CN (1) CN1639183A (enExample)
AU (4) AU2003215062B2 (enExample)
WO (1) WO2003066818A2 (enExample)

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CN101395264B (zh) 2006-02-16 2013-01-23 花王株式会社 重组微生物
JP5140285B2 (ja) * 2006-02-16 2013-02-06 花王株式会社 組換え微生物
US8198046B2 (en) 2006-07-11 2012-06-12 Danisco Us Inc. KEX2 cleavage regions of recombinant fusion proteins
US20080026376A1 (en) * 2006-07-11 2008-01-31 Huaming Wang KEX2 cleavage regions of recombinant fusion proteins
JP5140307B2 (ja) * 2007-04-10 2013-02-06 花王株式会社 組換え微生物
CN101679489B (zh) * 2007-05-10 2014-05-28 丹尼斯科美国公司 增加细菌内多肽表达的修饰的分泌系统
JP2009017840A (ja) * 2007-07-13 2009-01-29 Japan Agengy For Marine-Earth Science & Technology 外来遺伝子を細胞に安定に保持する方法
US8399310B2 (en) 2010-10-29 2013-03-19 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8389365B2 (en) 2011-03-31 2013-03-05 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8564044B2 (en) 2011-03-31 2013-10-22 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8906764B2 (en) 2012-01-04 2014-12-09 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8669158B2 (en) 2012-01-04 2014-03-11 Mark D. Hall Non-volatile memory (NVM) and logic integration
US8658497B2 (en) 2012-01-04 2014-02-25 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
WO2013107522A1 (en) 2012-01-20 2013-07-25 Hewlett-Packard Indigo B.V. Concentrating an ink composition
US8951863B2 (en) 2012-04-06 2015-02-10 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8722493B2 (en) 2012-04-09 2014-05-13 Freescale Semiconductor, Inc. Logic transistor and non-volatile memory cell integration
US9087913B2 (en) 2012-04-09 2015-07-21 Freescale Semiconductor, Inc. Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logic
US8728886B2 (en) 2012-06-08 2014-05-20 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell using a high-k dielectric
US8574987B1 (en) 2012-06-08 2013-11-05 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell using an interlayer dielectric
US9111865B2 (en) 2012-10-26 2015-08-18 Freescale Semiconductor, Inc. Method of making a logic transistor and a non-volatile memory (NVM) cell
US8716089B1 (en) 2013-03-08 2014-05-06 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
US8741719B1 (en) 2013-03-08 2014-06-03 Freescale Semiconductor, Inc. Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate technique
US9006093B2 (en) 2013-06-27 2015-04-14 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high voltage transistor integration
US8871598B1 (en) 2013-07-31 2014-10-28 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US8877585B1 (en) 2013-08-16 2014-11-04 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integration
US9129996B2 (en) 2013-07-31 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell and high-K and metal gate transistor integration
US9082837B2 (en) 2013-08-08 2015-07-14 Freescale Semiconductor, Inc. Nonvolatile memory bitcell with inlaid high k metal select gate
US9252246B2 (en) 2013-08-21 2016-02-02 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic device
US9082650B2 (en) 2013-08-21 2015-07-14 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic structure
US8932925B1 (en) 2013-08-22 2015-01-13 Freescale Semiconductor, Inc. Split-gate non-volatile memory (NVM) cell and device structure integration
US9275864B2 (en) 2013-08-22 2016-03-01 Freescale Semiconductor,Inc. Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
US9136129B2 (en) 2013-09-30 2015-09-15 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-last methodology
US8901632B1 (en) 2013-09-30 2014-12-02 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
US9129855B2 (en) 2013-09-30 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US9231077B2 (en) 2014-03-03 2016-01-05 Freescale Semiconductor, Inc. Method of making a logic transistor and non-volatile memory (NVM) cell
US9112056B1 (en) 2014-03-28 2015-08-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9252152B2 (en) 2014-03-28 2016-02-02 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9472418B2 (en) 2014-03-28 2016-10-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9379222B2 (en) 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
US9343314B2 (en) 2014-05-30 2016-05-17 Freescale Semiconductor, Inc. Split gate nanocrystal memory integration
US9257445B2 (en) 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
US20170335360A1 (en) * 2014-10-30 2017-11-23 Merck Sharp & Dohme Corp. Bacillus megaterium recombinant protein expression system
US12065652B2 (en) * 2017-07-21 2024-08-20 Basf Se Promoter for heterologous expression
CN108929883B (zh) * 2018-08-06 2020-05-01 齐鲁工业大学 芽孢形成相关基因spoⅡE在影响菌株生长及产酶中的应用
CN108949784B (zh) * 2018-08-06 2020-01-10 齐鲁工业大学 芽孢形成相关基因sigmaF在产酶中的应用
CN109355303B (zh) * 2018-11-14 2022-05-06 天津大学 抑制和/或敲除基因在提高单克隆抗体的表达量中的应用
CN109837228B (zh) * 2019-04-03 2020-03-03 南京工业大学 一株利迪链霉菌及其在防治火疫病中的应用

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US5322770A (en) 1989-12-22 1994-06-21 Hoffman-Laroche Inc. Reverse transcription with thermostable DNA polymerases - high temperature reverse transcription
JPH05153979A (ja) * 1991-11-29 1993-06-22 Rikagaku Kenkyusho ｓｅｃＹタンパク質遺伝子
ATE252641T1 (de) * 1997-07-15 2003-11-15 Genencor Int Erhöhung der proteinproduktion in gram-positiven mikroorganismen
EP1355931A2 (en) * 2000-10-06 2003-10-29 Novozymes Biotech, Inc. Methods for monitoring multiple gene expression

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