JP2005516613A - バチルス・クラウジにおける分泌、転写、及び胞子形成遺伝子 - Google Patents

バチルス・クラウジにおける分泌、転写、及び胞子形成遺伝子 Download PDF

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JP2005516613A
JP2005516613A JP2003566169A JP2003566169A JP2005516613A JP 2005516613 A JP2005516613 A JP 2005516613A JP 2003566169 A JP2003566169 A JP 2003566169A JP 2003566169 A JP2003566169 A JP 2003566169A JP 2005516613 A JP2005516613 A JP 2005516613A
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seq
amino acid
sequence
protein
acid sequence
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JP2005516613A5 (enExample
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フェラーリ、ユージニオ
ヴァン、キメナード・アニータ
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ジェネンコー・インターナショナル・インク
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • C07K14/195—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria
    • C07K14/32—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria from Bacillus (G)

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Biochemistry (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Genetics & Genomics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Peptides Or Proteins (AREA)
  • Enzymes And Modification Thereof (AREA)
JP2003566169A 2002-02-08 2003-02-06 バチルス・クラウジにおける分泌、転写、及び胞子形成遺伝子 Pending JP2005516613A (ja)

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Application Number Priority Date Filing Date Title
US35525802P 2002-02-08 2002-02-08
PCT/US2003/003534 WO2003066818A2 (en) 2002-02-08 2003-02-06 Secretion, transcription and sporulation genes in bacillus clausii

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JP2005516613A true JP2005516613A (ja) 2005-06-09
JP2005516613A5 JP2005516613A5 (enExample) 2006-03-09

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US (4) US7247450B2 (enExample)
EP (1) EP1487853A4 (enExample)
JP (1) JP2005516613A (enExample)
CN (1) CN1639183A (enExample)
AU (4) AU2003215062B2 (enExample)
WO (1) WO2003066818A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094136A1 (ja) * 2006-02-16 2007-08-23 Kao Corporation 組換え微生物
JP2008099660A (ja) * 2006-02-16 2008-05-01 Kao Corp 組換え微生物
JP2008259432A (ja) * 2007-04-10 2008-10-30 Kao Corp 組換え微生物
JP2009017840A (ja) * 2007-07-13 2009-01-29 Japan Agengy For Marine-Earth Science & Technology 外来遺伝子を細胞に安定に保持する方法

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US8198046B2 (en) 2006-07-11 2012-06-12 Danisco Us Inc. KEX2 cleavage regions of recombinant fusion proteins
US20080026376A1 (en) * 2006-07-11 2008-01-31 Huaming Wang KEX2 cleavage regions of recombinant fusion proteins
CN101679489B (zh) * 2007-05-10 2014-05-28 丹尼斯科美国公司 增加细菌内多肽表达的修饰的分泌系统
US8399310B2 (en) 2010-10-29 2013-03-19 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8389365B2 (en) 2011-03-31 2013-03-05 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8564044B2 (en) 2011-03-31 2013-10-22 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8906764B2 (en) 2012-01-04 2014-12-09 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8669158B2 (en) 2012-01-04 2014-03-11 Mark D. Hall Non-volatile memory (NVM) and logic integration
US8658497B2 (en) 2012-01-04 2014-02-25 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
WO2013107522A1 (en) 2012-01-20 2013-07-25 Hewlett-Packard Indigo B.V. Concentrating an ink composition
US8951863B2 (en) 2012-04-06 2015-02-10 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8722493B2 (en) 2012-04-09 2014-05-13 Freescale Semiconductor, Inc. Logic transistor and non-volatile memory cell integration
US9087913B2 (en) 2012-04-09 2015-07-21 Freescale Semiconductor, Inc. Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logic
US8728886B2 (en) 2012-06-08 2014-05-20 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell using a high-k dielectric
US8574987B1 (en) 2012-06-08 2013-11-05 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell using an interlayer dielectric
US9111865B2 (en) 2012-10-26 2015-08-18 Freescale Semiconductor, Inc. Method of making a logic transistor and a non-volatile memory (NVM) cell
US8716089B1 (en) 2013-03-08 2014-05-06 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
US8741719B1 (en) 2013-03-08 2014-06-03 Freescale Semiconductor, Inc. Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate technique
US9006093B2 (en) 2013-06-27 2015-04-14 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high voltage transistor integration
US8871598B1 (en) 2013-07-31 2014-10-28 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US8877585B1 (en) 2013-08-16 2014-11-04 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integration
US9129996B2 (en) 2013-07-31 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell and high-K and metal gate transistor integration
US9082837B2 (en) 2013-08-08 2015-07-14 Freescale Semiconductor, Inc. Nonvolatile memory bitcell with inlaid high k metal select gate
US9252246B2 (en) 2013-08-21 2016-02-02 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic device
US9082650B2 (en) 2013-08-21 2015-07-14 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic structure
US8932925B1 (en) 2013-08-22 2015-01-13 Freescale Semiconductor, Inc. Split-gate non-volatile memory (NVM) cell and device structure integration
US9275864B2 (en) 2013-08-22 2016-03-01 Freescale Semiconductor,Inc. Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
US9136129B2 (en) 2013-09-30 2015-09-15 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-last methodology
US8901632B1 (en) 2013-09-30 2014-12-02 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
US9129855B2 (en) 2013-09-30 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US9231077B2 (en) 2014-03-03 2016-01-05 Freescale Semiconductor, Inc. Method of making a logic transistor and non-volatile memory (NVM) cell
US9112056B1 (en) 2014-03-28 2015-08-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9252152B2 (en) 2014-03-28 2016-02-02 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9472418B2 (en) 2014-03-28 2016-10-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9379222B2 (en) 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
US9343314B2 (en) 2014-05-30 2016-05-17 Freescale Semiconductor, Inc. Split gate nanocrystal memory integration
US9257445B2 (en) 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
US20170335360A1 (en) * 2014-10-30 2017-11-23 Merck Sharp & Dohme Corp. Bacillus megaterium recombinant protein expression system
US12065652B2 (en) * 2017-07-21 2024-08-20 Basf Se Promoter for heterologous expression
CN108929883B (zh) * 2018-08-06 2020-05-01 齐鲁工业大学 芽孢形成相关基因spoⅡE在影响菌株生长及产酶中的应用
CN108949784B (zh) * 2018-08-06 2020-01-10 齐鲁工业大学 芽孢形成相关基因sigmaF在产酶中的应用
CN109355303B (zh) * 2018-11-14 2022-05-06 天津大学 抑制和/或敲除基因在提高单克隆抗体的表达量中的应用
CN109837228B (zh) * 2019-04-03 2020-03-03 南京工业大学 一株利迪链霉菌及其在防治火疫病中的应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264366A (en) 1984-05-29 1993-11-23 Genencor, Inc. Protease deficient bacillus
US5322770A (en) 1989-12-22 1994-06-21 Hoffman-Laroche Inc. Reverse transcription with thermostable DNA polymerases - high temperature reverse transcription
JPH05153979A (ja) * 1991-11-29 1993-06-22 Rikagaku Kenkyusho ｓｅｃＹタンパク質遺伝子
ATE252641T1 (de) * 1997-07-15 2003-11-15 Genencor Int Erhöhung der proteinproduktion in gram-positiven mikroorganismen
EP1355931A2 (en) * 2000-10-06 2003-10-29 Novozymes Biotech, Inc. Methods for monitoring multiple gene expression

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094136A1 (ja) * 2006-02-16 2007-08-23 Kao Corporation 組換え微生物
JP2008099660A (ja) * 2006-02-16 2008-05-01 Kao Corp 組換え微生物
US8460893B2 (en) 2006-02-16 2013-06-11 Kao Corporation Recombinant microorganism expressing a secY gene and method of use thereof
JP2008259432A (ja) * 2007-04-10 2008-10-30 Kao Corp 組換え微生物
JP2009017840A (ja) * 2007-07-13 2009-01-29 Japan Agengy For Marine-Earth Science & Technology 外来遺伝子を細胞に安定に保持する方法

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Publication number Publication date
AU2008216972B2 (en) 2012-07-26
AU2003215062A1 (en) 2003-09-02
US7544488B2 (en) 2009-06-09
AU2008216971B2 (en) 2012-07-26
WO2003066818A2 (en) 2003-08-14
EP1487853A4 (en) 2006-06-28
US7544489B2 (en) 2009-06-09
US20050209448A1 (en) 2005-09-22
WO2003066818A3 (en) 2004-10-07
AU2003215062B2 (en) 2008-06-19
AU2008216972A1 (en) 2008-10-09
US20080009033A1 (en) 2008-01-10
EP1487853A2 (en) 2004-12-22
AU2008216971A1 (en) 2008-10-09
AU2008216973B2 (en) 2012-07-26
AU2008216973A1 (en) 2008-10-09
CN1639183A (zh) 2005-07-13
US20070172922A1 (en) 2007-07-26
US7247450B2 (en) 2007-07-24
US20070172921A1 (en) 2007-07-26
US7544490B2 (en) 2009-06-09

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