JP2005513777A5 - - Google Patents
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- Publication number
- JP2005513777A5 JP2005513777A5 JP2003553609A JP2003553609A JP2005513777A5 JP 2005513777 A5 JP2005513777 A5 JP 2005513777A5 JP 2003553609 A JP2003553609 A JP 2003553609A JP 2003553609 A JP2003553609 A JP 2003553609A JP 2005513777 A5 JP2005513777 A5 JP 2005513777A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- dielectric
- manufacturing
- sol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000004377 microelectronic Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
Claims (4)
- 誘電性層の製造方法において、多官能性カルボシランのゾル−ゲル−生成物を熱処理することを特徴とする、誘電性層の製造方法。
- 請求項１記載の方法により製造可能である、誘電性層。
- 層が０．０１−１００μｍの層厚を有している、請求項２記載の誘電性層。
- 高集積された超小形電子回路の製造において、チップ−パッケージングの際に、マルチチップ−モジュールを組み立てるため、並びに積層プリント基板及びディスプレイの製造のための絶縁層としての、請求項２記載の誘電性層の使用。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10162443A DE10162443A1 (de) | 2001-12-19 | 2001-12-19 | Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane |
| PCT/EP2002/013834 WO2003052809A1 (de) | 2001-12-19 | 2002-12-06 | Verfahren zur herstellung von dielektrischen schichten unter verwendung multifunktioneller carbosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005513777A JP2005513777A (ja) | 2005-05-12 |
| JP2005513777A5 true JP2005513777A5 (ja) | 2006-01-05 |
Family
ID=7709842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003553609A Pending JP2005513777A (ja) | 2001-12-19 | 2002-12-06 | 多官能性カルボシランを用いる誘電性層の製造方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7090896B2 (ja) |
| EP (1) | EP1468446A1 (ja) |
| JP (1) | JP2005513777A (ja) |
| KR (1) | KR20040068274A (ja) |
| CN (1) | CN100336183C (ja) |
| AU (1) | AU2002366351A1 (ja) |
| DE (1) | DE10162443A1 (ja) |
| HK (1) | HK1076918A1 (ja) |
| TW (1) | TWI265964B (ja) |
| WO (1) | WO2003052809A1 (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040038048A1 (en) * | 2000-02-02 | 2004-02-26 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
| DE102004027857A1 (de) * | 2004-06-08 | 2006-01-05 | Siemens Ag | Verfahren zum Herstellen eines keramischen Werkstoffs, keramischer Werkstoff und Keramikkörper mit dem keramischen Werkstoff |
| US7575979B2 (en) * | 2004-06-22 | 2009-08-18 | Hewlett-Packard Development Company, L.P. | Method to form a film |
| US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
| JP5324734B2 (ja) * | 2005-01-21 | 2013-10-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 誘電体材料とその製造方法 |
| JP4935111B2 (ja) | 2006-02-22 | 2012-05-23 | 富士通株式会社 | 絶縁膜形成用組成物、半導体装置用絶縁膜、その製造方法および半導体装置 |
| US20080012074A1 (en) * | 2006-07-14 | 2008-01-17 | Air Products And Chemicals, Inc. | Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors |
| KR20110021951A (ko) * | 2008-05-26 | 2011-03-04 | 바스프 에스이 | 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질 |
| US10361137B2 (en) * | 2017-07-31 | 2019-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677410A (en) * | 1995-05-16 | 1997-10-14 | Bayer Ag | Carbosilane-dendrimers, carbosilane-hybrid materials, methods for manufacturing them and a method for manufacturing coatings from the carbosilane-dendrimers |
| JPH09143420A (ja) * | 1995-09-21 | 1997-06-03 | Asahi Glass Co Ltd | 低誘電率樹脂組成物 |
| US6005131A (en) * | 1996-01-30 | 1999-12-21 | Bayer Aktiengesellschaft | Multi-functional, cyclic organosiloxanes, process for the production thereof and use thereof |
| DE19603241C1 (de) * | 1996-01-30 | 1997-07-10 | Bayer Ag | Multifunktionelle, cyclische Organosiloxane, Verfahren zu deren Herstellung und deren Verwendung |
| US6043330A (en) * | 1997-04-21 | 2000-03-28 | Alliedsignal Inc. | Synthesis of siloxane resins |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| AU7653698A (en) * | 1997-05-23 | 1998-12-11 | Agfa-Gevaert A.G. | Organosilane oligomers |
| US6042994A (en) * | 1998-01-20 | 2000-03-28 | Alliedsignal Inc. | Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content |
| US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
| US6054206A (en) * | 1998-06-22 | 2000-04-25 | Novellus Systems, Inc. | Chemical vapor deposition of low density silicon dioxide films |
| US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
| US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
| EP1150346B1 (en) * | 2000-04-28 | 2011-12-28 | LG Chem Investment, Ltd | A process for preparing insulating material having low dielectric constant |
| US6514091B2 (en) * | 2000-11-28 | 2003-02-04 | Sumitomo Wiring Systems, Ltd. | Electrical junction box for a vehicle |
| US7270941B2 (en) * | 2002-03-04 | 2007-09-18 | Tokyo Electron Limited | Method of passivating of low dielectric materials in wafer processing |
| JP4139710B2 (ja) * | 2003-03-10 | 2008-08-27 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| KR100507967B1 (ko) * | 2003-07-01 | 2005-08-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
-
2001
- 2001-12-19 DE DE10162443A patent/DE10162443A1/de not_active Withdrawn
-
2002
- 2002-12-06 EP EP02804878A patent/EP1468446A1/de not_active Withdrawn
- 2002-12-06 JP JP2003553609A patent/JP2005513777A/ja active Pending
- 2002-12-06 WO PCT/EP2002/013834 patent/WO2003052809A1/de not_active Application Discontinuation
- 2002-12-06 CN CNB028253167A patent/CN100336183C/zh not_active Expired - Fee Related
- 2002-12-06 KR KR10-2004-7009515A patent/KR20040068274A/ko not_active Application Discontinuation
- 2002-12-06 AU AU2002366351A patent/AU2002366351A1/en not_active Abandoned
- 2002-12-13 US US10/319,121 patent/US7090896B2/en not_active Expired - Fee Related
- 2002-12-18 TW TW091136453A patent/TWI265964B/zh not_active IP Right Cessation
-
2005
- 2005-09-30 HK HK05108731A patent/HK1076918A1/xx not_active IP Right Cessation
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