JP2005512322A5 - - Google Patents
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- Publication number
- JP2005512322A5 JP2005512322A5 JP2003550266A JP2003550266A JP2005512322A5 JP 2005512322 A5 JP2005512322 A5 JP 2005512322A5 JP 2003550266 A JP2003550266 A JP 2003550266A JP 2003550266 A JP2003550266 A JP 2003550266A JP 2005512322 A5 JP2005512322 A5 JP 2005512322A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- tantalum
- layer
- surface region
- tantalum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 25
- 238000000034 method Methods 0.000 claims 17
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 7
- 239000002131 composite material Substances 0.000 claims 7
- 229910052715 tantalum Inorganic materials 0.000 claims 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 7
- 238000000137 annealing Methods 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 230000009977 dual effect Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/001,805 | 2001-12-05 | ||
| US10/001,805 US6645853B1 (en) | 2001-12-05 | 2001-12-05 | Interconnects with improved barrier layer adhesion |
| PCT/US2002/038820 WO2003049161A1 (en) | 2001-12-05 | 2002-12-04 | Interconnects with improved barrier layer adhesion |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005512322A JP2005512322A (ja) | 2005-04-28 |
| JP2005512322A5 true JP2005512322A5 (enExample) | 2006-01-26 |
| JP4740538B2 JP4740538B2 (ja) | 2011-08-03 |
Family
ID=21697916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003550266A Expired - Lifetime JP4740538B2 (ja) | 2001-12-05 | 2002-12-04 | 半導体デバイスの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6645853B1 (enExample) |
| EP (1) | EP1451858B1 (enExample) |
| JP (1) | JP4740538B2 (enExample) |
| KR (2) | KR100922420B1 (enExample) |
| CN (1) | CN1316566C (enExample) |
| AU (1) | AU2002362062A1 (enExample) |
| TW (1) | TWI265593B (enExample) |
| WO (1) | WO2003049161A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW518712B (en) * | 2002-01-25 | 2003-01-21 | Taiwan Semiconductor Mfg | Manufacture method of low resistance barrier layer of copper metallization process |
| US6664185B1 (en) * | 2002-04-25 | 2003-12-16 | Advanced Micro Devices, Inc. | Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect |
| US7060557B1 (en) * | 2002-07-05 | 2006-06-13 | Newport Fab, Llc, Inc. | Fabrication of high-density capacitors for mixed signal/RF circuits |
| US6780789B1 (en) * | 2002-08-29 | 2004-08-24 | Advanced Micro Devices, Inc. | Laser thermal oxidation to form ultra-thin gate oxide |
| US7825516B2 (en) * | 2002-12-11 | 2010-11-02 | International Business Machines Corporation | Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures |
| US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US6992390B2 (en) * | 2003-11-07 | 2006-01-31 | International Business Machines Corp. | Liner with improved electromigration redundancy for damascene interconnects |
| KR100515370B1 (ko) * | 2003-12-31 | 2005-09-14 | 동부아남반도체 주식회사 | 반도체 소자의 플러그 제조 방법 |
| US6952052B1 (en) * | 2004-03-30 | 2005-10-04 | Advanced Micro Devices, Inc. | Cu interconnects with composite barrier layers for wafer-to-wafer uniformity |
| US7605469B2 (en) * | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
| US7223670B2 (en) * | 2004-08-20 | 2007-05-29 | International Business Machines Corporation | DUV laser annealing and stabilization of SiCOH films |
| US7087521B2 (en) * | 2004-11-19 | 2006-08-08 | Intel Corporation | Forming an intermediate layer in interconnect joints and structures formed thereby |
| US20060113675A1 (en) * | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
| US7528028B2 (en) * | 2005-06-17 | 2009-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Super anneal for process induced strain modulation |
| KR100640662B1 (ko) * | 2005-08-06 | 2006-11-01 | 삼성전자주식회사 | 장벽금속 스페이서를 구비하는 반도체 소자 및 그 제조방법 |
| KR100687436B1 (ko) * | 2005-12-26 | 2007-02-26 | 동부일렉트로닉스 주식회사 | 반도체소자의 구리배선막 형성방법 |
| US20070235876A1 (en) * | 2006-03-30 | 2007-10-11 | Michael Goldstein | Method of forming an atomic layer thin film out of the liquid phase |
| US7800228B2 (en) * | 2006-05-17 | 2010-09-21 | International Business Machines Corporation | Reliable via contact interconnect structure |
| KR100853098B1 (ko) * | 2006-12-27 | 2008-08-19 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 및 이의 제조 방법 |
| US7851343B2 (en) * | 2007-06-14 | 2010-12-14 | Cree, Inc. | Methods of forming ohmic layers through ablation capping layers |
| US20090102052A1 (en) * | 2007-10-22 | 2009-04-23 | Sang Wook Ryu | Semiconductor Device and Fabricating Method Thereof |
| US20090179328A1 (en) * | 2008-01-14 | 2009-07-16 | International Business Machines Corporation | Barrier sequence for use in copper interconnect metallization |
| CN101494191B (zh) * | 2008-01-24 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 一种双镶嵌结构的制造方法 |
| US8105937B2 (en) * | 2008-08-13 | 2012-01-31 | International Business Machines Corporation | Conformal adhesion promoter liner for metal interconnects |
| US20100099251A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc. | Method for nitridation pretreatment |
| KR101277272B1 (ko) | 2008-12-08 | 2013-06-20 | 한국전자통신연구원 | 조류인플루엔자 바이러스의 포획 및 억제용 펩타이드 화합물 및 그의 응용 |
| RU2415964C1 (ru) * | 2009-10-26 | 2011-04-10 | Государственное образовательное учреждение высшего профессионального образования Московский автомобильно-дорожный институт (Государственный технический университет) | Способ низкотемпературного азотирования стальных деталей |
| CN102420176A (zh) * | 2011-06-15 | 2012-04-18 | 上海华力微电子有限公司 | 一种改善半导体晶片翘曲的方法 |
| US8420531B2 (en) * | 2011-06-21 | 2013-04-16 | International Business Machines Corporation | Enhanced diffusion barrier for interconnect structures |
| JP5835696B2 (ja) | 2012-09-05 | 2015-12-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US11443983B2 (en) * | 2018-09-24 | 2022-09-13 | Intel Corporation | Void-free high aspect ratio metal alloy interconnects and method of manufacture using a solvent-based etchant |
| CN110970350A (zh) * | 2018-09-28 | 2020-04-07 | 长鑫存储技术有限公司 | 包含α-Ta层的扩散阻挡层的制备方法以及复合扩散阻挡层 |
| CN110112096A (zh) * | 2019-05-17 | 2019-08-09 | 长江存储科技有限责任公司 | 金属互连结构及其形成方法 |
| US11527476B2 (en) * | 2020-09-11 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure of semiconductor device |
| US12315808B2 (en) * | 2022-04-19 | 2025-05-27 | Nanya Technology Corporation | Semiconductor device with liner structure |
| US12341062B2 (en) | 2022-04-19 | 2025-06-24 | Nanya Technology Corporation | Method for fabricating semiconductor device with liner structure |
| US20240213092A1 (en) * | 2022-12-22 | 2024-06-27 | International Business Machines Corporation | Octagonal interconnect wiring for advanced logic |
| US20250015024A1 (en) * | 2023-07-03 | 2025-01-09 | Rf360 Singapore Pte. Ltd. | Integrated device comprising metallization interconnects |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2821598B2 (ja) * | 1988-08-23 | 1998-11-05 | ソニー株式会社 | 半導体集積回路装置の製造方法 |
| US5464792A (en) * | 1993-06-07 | 1995-11-07 | Motorola, Inc. | Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device |
| US6271120B1 (en) | 1995-03-10 | 2001-08-07 | Advanced Micro Devices, Inc. | Method of enhanced silicide layer for advanced metal diffusion barrier layer application |
| JPH09162291A (ja) * | 1995-12-06 | 1997-06-20 | Ricoh Co Ltd | 半導体装置の製造方法 |
| US5801097A (en) * | 1997-03-10 | 1998-09-01 | Vanguard International Semiconductor Corporation | Thermal annealing method employing activated nitrogen for forming nitride layers |
| US6448655B1 (en) * | 1998-04-28 | 2002-09-10 | International Business Machines Corporation | Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation |
| US6461675B2 (en) * | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
| US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
| US6146996A (en) | 1998-09-01 | 2000-11-14 | Philips Electronics North America Corp. | Semiconductor device with conductive via and method of making same |
| TWI223873B (en) * | 1998-09-24 | 2004-11-11 | Applied Materials Inc | Nitrogen-containing tantalum films |
| US6143650A (en) | 1999-01-13 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor interconnect interface processing by pulse laser anneal |
| US6156648A (en) * | 1999-03-10 | 2000-12-05 | United Microelectronics Corp. | Method for fabricating dual damascene |
| JP2000323476A (ja) * | 1999-05-12 | 2000-11-24 | Tokyo Electron Ltd | 配線構造およびその製造方法 |
| US6222579B1 (en) * | 1999-05-14 | 2001-04-24 | Presstek, Inc. | Alignment of laser imaging assembly |
| US6339258B1 (en) * | 1999-07-02 | 2002-01-15 | International Business Machines Corporation | Low resistivity tantalum |
| US6326301B1 (en) * | 1999-07-13 | 2001-12-04 | Motorola, Inc. | Method for forming a dual inlaid copper interconnect structure |
| JP2001053077A (ja) * | 1999-08-13 | 2001-02-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6294458B1 (en) * | 2000-01-31 | 2001-09-25 | Motorola, Inc. | Semiconductor device adhesive layer structure and process for forming structure |
| US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
| US6284657B1 (en) * | 2000-02-25 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Non-metallic barrier formation for copper damascene type interconnects |
| US6657284B1 (en) * | 2000-12-01 | 2003-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graded dielectric layer and method for fabrication thereof |
| US6429524B1 (en) * | 2001-05-11 | 2002-08-06 | International Business Machines Corporation | Ultra-thin tantalum nitride copper interconnect barrier |
| US6548400B2 (en) * | 2001-06-29 | 2003-04-15 | Texas Instruments Incorporated | Method of fabricating interlevel connectors using only one photomask step |
| US6930391B2 (en) * | 2002-08-27 | 2005-08-16 | Intel Corporation | Method for alloy-electroplating group IB metals with refractory metals for interconnections |
-
2001
- 2001-12-05 US US10/001,805 patent/US6645853B1/en not_active Expired - Lifetime
-
2002
- 2002-12-04 KR KR1020047008728A patent/KR100922420B1/ko not_active Expired - Lifetime
- 2002-12-04 KR KR1020097017642A patent/KR101059968B1/ko not_active Expired - Lifetime
- 2002-12-04 AU AU2002362062A patent/AU2002362062A1/en not_active Abandoned
- 2002-12-04 WO PCT/US2002/038820 patent/WO2003049161A1/en not_active Ceased
- 2002-12-04 JP JP2003550266A patent/JP4740538B2/ja not_active Expired - Lifetime
- 2002-12-04 EP EP02797192A patent/EP1451858B1/en not_active Expired - Lifetime
- 2002-12-04 CN CNB028242548A patent/CN1316566C/zh not_active Expired - Lifetime
- 2002-12-05 TW TW091135258A patent/TWI265593B/zh not_active IP Right Cessation
-
2003
- 2003-09-16 US US10/662,525 patent/US7071562B2/en not_active Expired - Lifetime
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