JP4740538B2 - 半導体デバイスの製造方法 - Google Patents
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Description
従来の半導体デバイスは、半導体基板、典型的には、ドーピングされた単結晶シリコン、連続して形成される複数の中間層誘電体、および導体のパターンを有する。 集積回路は、配線間スペーシングによって隔てられた複数の配線パターンと、バス線、ビット線、ワード線、論理配線のような複数の配線を含んで形成される。
一般的に、例えば上位層と下位層のような異なる層上における導体パターンは、ビアホールに充填された導体プラグによって電気的に接続され、一方、コンタクトホールに充填された導電性プラグは、半導体基板の内部または基板上で形成されるトランジスタのソース/ドレイン領域のような能動素子領域との電気的なコンタクトを確立する。導電性の線路は、トレンチのような開口部の中に形成される。、典型的には、トレンチは、半導体基板に対して実質的に水平に延びる。
5レベル以上のメタライゼーション(金属被膜)を有する半導体「チップ」は、デバイス形状のサブミクロンレベルへの超小型化の要求を満たすために一般的になってきている。
サブミクロン技術では、配線ノードが相当な距離、例えば、数百ミクロン以上の距離をひきまわされるとすると、配線キャパシタンスによって回路ノード・キャパシタンスの装荷が制限される。サブミクロンデザインルールが約0.12ミクロン以下へと減少するのに伴い、集積回路速度の遅れによるリジェクト率によって、製造処理のスループットが著しく低下して製造コストが増加する。さらに、線路幅はが小さくなるにつれて、電導率及び耐エレクトロマイグレーション性の重要性が増してくる。
銅を覆うための一般的な拡散バリア材料としては、タンタル(Ta)、窒化タンタル(TaN)、窒化チタン(TiN)、チタン(Ti)、チタン・タングステン(TiW)、タングステン(W)、窒化タングステン(WN)、Ti−TiN、チタン窒化シリコン(TiSiN)、タングステン窒化シリコン(WSiN)、タンタル窒化シリコン(TaSiN)、および窒化シリコンが挙げられる。銅を覆うためのこれらバリア材料の使用は、銅と導体中間層間の界面に限定されるわけではなく、他の金属との界面にも適用できる。
信頼性の問題は、一部に、銅の金属加工過程におけるタンタル(Ta)と窒化タンタル(TaN)の使用、バリア層の選択に起因している。タンタルは、種々の誘電体中間層材料に対する接着性が十分でないことが判明しており、特に、誘電率の低い誘電材料中間層への接着性が十分でない。特に、フッ素含有酸化物、例えばフッ素(F)がドープされたオルトケイ酸塩(F−TEOS)由来のフッ素(F)含有シリコン酸化物のような、誘電率(k)が約3.9より小さい材料に対して接着性が十分ではない。バリア層の誘電体層への十分な接着を欠くことは、これに伴う信頼性の問題とともに、層間剥離という結果を引き起こす。窒化タンタルは、ダマシン開口部を充てんする銅(Cu)および銅(Cu)合金への接着の適切さを欠くことが判明している。さらに、タンタルと窒化タンタルは、一般には、イオン化物理的蒸着デポジション(PVD:physical vapor deposition)のようなPVD技術によって、デポジションされる。結果として生じたタンタル層は、一般的には、比較的高い比抵抗、例えば約200μオームcm〜約250μオームcmを示すβフェーズタンタル(β−Ta)である。窒化タンタルは、一般的に窒素(N2)含有率を約30at%〜55at%としてデポジションされ、200μオームcmを超える比抵抗を示す。
従って、以下の図面と記載は、説明目的のためであって、これに限定されるものではない。
この結果出来た複合バリア層は、誘電体材料と関連する傾斜濃度窒化タンタル層と、銅金属加工化と関連するαタンタル(α−Ta)層を含み、誘電体材料に対するβタンタル(β−Ta)の接着の悪さと、銅金属加工化に対する窒化タンタルの接着の悪さによって引き起こされた接着の問題を解決する。窒化タンタル層にタンタルがデポジションされることは、傾斜濃度窒化タンタル層がαタンタル(α−Ta)の増加のテンプレートとしての役目を担うので、結果としてβタンタル(β−Ta)の比抵抗約200〜約250μオームcmに対して、約40〜約50μオームcmを表す低い比抵抗を有するαタンタルを形成する利点がある。特に、イオン化スパッタ蒸着(ISD:ionized sputter deposition)のようなイオン化物理蒸着(PVD:physical vapor deposition)によってタンタルをデポジションすることが好ましいことが見いだされた。
窒化シリコン又はシリコンカーバイドのような中間エッチ停止層14がその上に形成される。低誘電率(k)材料を含有する誘電体層、例えばF−TEOS由来のフッ素ドープシリコン酸化物層のような、他の誘電体層15がその上にデポジションされる。その後、二重ダマシン開口部(16)が形成され、誘電体層13,15の露出表面17が残される。二重ダマシン開口部は、ビア形成後にトレンチ形成(via first-trench last)する技術、又はトレンチ形成後にビア形成(trench first-trench last)する技術の何れによっても形成されることが理解される。誘電体層13,15の露出した表面は、矢印18で示すようにパルス状レーザ光線を照射することによって、レーザ熱アニール処理に晒され、その結果、フッ素が減少し、窒素が濃縮される。
本発明の実施形態の使用に適した他の適切な低誘電率材料は、FOx(登録商標)(HSQベース)、XLK(登録商標)(HSQベース)、多孔質体SILK(登録商標)、芳香族炭化水素ポリマー(それぞれの材料はミシガン州ミッドランド市のダウ化学株式会社から入手可能:Dow Chemical Co.,Midland, MI):Coral(登録商標)、炭素ドープシリコン酸化物(カリフォルニア州サンノゼ市のノベラスシステム会社から入手可能:Novellus Systems, San Jose, CA)、シリコン−炭素−酸素−炭化水素(SiCOH)有機誘電体、Black-Diamond(登録商標)誘電体、Flare(登録商標)、有機ポリマー、HOSP(登録商標)、ハイブリッドシオロキサン有機ポリマー(hybrid sioloxane-organic polymer)、Nanoglassナノグラス(登録商標)、ナノ多孔質シリカ(個々の材料は、ハネウェル電気材料会社から入手可能)、オルトけい酸テトラエチル(TEOS)由来のハロゲンドープ(例えばフッ素ドープ)シリコン酸化物、フッ素ドープシリケートグラス(fluorine-doped silicate glass:FSG)を有する。
Claims (13)
- 誘電体層に開口部を形成する過程と、
アンモニア(NH3)及び窒素(N2)中で前記誘電体層の露出表面領域にレーザ熱アニール処理を実行し、
タンタル(Ta)を含有し前記開口部を被覆する複合バリア層を形成する過程と、を含む、半導体デバイスの製造方法。 - 前記誘電体層が、フッ素ドープオルトけい酸テトラエチル(F−TEOS)由来のフッ素含有シリコン酸化物を含む、請求項1記載の方法。
- フッ素(F)が減少して窒素(N2)が濃縮された表面領域を形成するため、前記露出表面にレーザ熱アニール処理を実行する過程を含む、請求項2記載の方法。
- 誘電体層に開口部を形成する過程と、
フッ素(F)が減少して窒素(N2)が濃縮された表面領域を形成するため、アンモニア(NH3)及び窒素(N2)中で前記誘電体層の露出表面領域にレーザ熱アニール処理を実行し、
タンタル(Ta)のデポジションを行うことによって、タンタル(Ta)を含有し前記開口部を被覆する複合バリア層を形成する過程とを含み、
前記誘電体層が、フッ素ドープオルトけい酸テトラエチル(F−TEOS)由来のフッ素含有シリコン酸化物を含み、
前記複合バリア層は、前記窒素(N2)が濃縮された表面領域上に形成されるとともに前記窒素が濃縮された表面領域から離れる方向で窒素(N2)量が減少するように窒素を含有する傾斜濃度窒化タンタル層と、前記傾斜濃度窒化タンタル層(20)に形成されたαタンタル(α−Ta)層(21)とを含む、半導体デバイスの製造方法。 - 前記開口部を銅(Cu)又は銅合金で充填する過程を含む、請求項4記載の方法。
- 前記開口部は、上方トレンチにつながる下方ビアホールを含むデュアルダマシン開口部を含み、
上方ラインとつながった下方ビアを形成するように前記前記開口部を銅(Cu)又は銅合金で充填する過程を含む、請求項5記載の方法。 - 0.09〜0.11ジュール/cm 2 の放射フルーエンスで前記露出表面にレーザ光線(18)を照射することによってレーザ熱アニール処理する過程を含む、請求項6記載の方法。
- 温度を370℃〜430℃に上昇させるように前記レーザ熱アニール処理を行う過程を含む、請求項7記載の方法。
- 窒素(N2)を流速200〜2000sccm、アンモニア(NH3)を流速200〜2000sccmで用いたレーザ熱アニール処理を行って、フッ素(F)が減少されて窒素(N2)が濃縮された表面領域を形成する過程を含む、請求項2記載の方法。
- タンタル(Ta)のデポジションを行うことによって前記複合バリア層(20,21)を形成する過程を有し、前記複合バリア層は、
前記窒素が濃縮された表面領域上に形成された傾斜濃度窒化タンタル層を有し、この傾斜濃度窒化タンタル層は、前記窒素濃縮表面領域(19)から離れる方向で窒素(N2)量が減少するように窒素を含有するものであり、
前記傾斜濃度窒化タンタル層上に形成されたαタンタル(α−Ta)層(21)を有する、請求項9記載の方法。 - 窒素(N2)が濃縮された表面領域を形成するように前記誘電層の露出表面にレーザ熱アニール処理を実行する過程を含む、請求項1記載の方法。
- タンタル(Ta)のデポジションを行うことによって前記複合バリア層(20,21)を形成する過程を有し、前記複合バリア層は、
前記窒素が濃縮された表面領域上に形成された傾斜濃度窒化タンタル層を有し、この傾斜濃度窒化タンタル層は、前記窒素濃縮表面領域(19)から離れる方向で窒素(N2)量が減少するように窒素を含有するものであり、
前記傾斜濃度窒化タンタル層上に形成されたαタンタル(α−Ta)層(21)を有する、請求項11記載の方法。 - 前記開口部を銅(Cu)又は銅合金で充填する過程を含む、請求項11記載の方法。
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