JP2005502208A - 線幅選択型２室式レーザシステム - Google Patents

線幅選択型２室式レーザシステム Download PDF

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Publication number
JP2005502208A
JP2005502208A JP2003525953A JP2003525953A JP2005502208A JP 2005502208 A JP2005502208 A JP 2005502208A JP 2003525953 A JP2003525953 A JP 2003525953A JP 2003525953 A JP2003525953 A JP 2003525953A JP 2005502208 A JP2005502208 A JP 2005502208A
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Japan
Prior art keywords
laser
laser system
pulse
discharge
gas
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Pending
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JP2003525953A
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English (en)
Japanese (ja)
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JP2005502208A5 (enExample
Inventor
ディヴィッド エス ノールズ
ダニエル ジェイ ダブリュ ブラウン
リチャード エル サンドストローム
ジャーマン イー ライロフ
エックハード ディ オンケルス
ハーヴ エイ ベソーセル
ディヴィッド ダブリュ マイヤーズ
アーショフ　アレクサンダー　アイ
パートロ　ウィリアム　エヌ
イゴール ヴィ ホメンコフ
リチャード シー ウジャズドウスキ
ネス　リチャード　エム
スコット ティ スミス
ウィリアム ジー ハルバード
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Cymer Inc
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Cymer Inc
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Publication date
Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US09/970,503 external-priority patent/US20020071468A1/en
Priority claimed from US10/000,991 external-priority patent/US6795474B2/en
Priority claimed from US10/006,913 external-priority patent/US6535531B1/en
Priority claimed from US10/012,002 external-priority patent/US6625191B2/en
Priority claimed from US10/036,727 external-priority patent/US6865210B2/en
Priority claimed from US10/036,676 external-priority patent/US6882674B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of JP2005502208A publication Critical patent/JP2005502208A/ja
Publication of JP2005502208A5 publication Critical patent/JP2005502208A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2366—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media comprising a gas as the active medium
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
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    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1305—Feedback control systems
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/22—Gases
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    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm

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JP2003525953A 2001-08-29 2002-08-19 線幅選択型２室式レーザシステム Pending JP2005502208A (ja)

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US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US09/970,503 US20020071468A1 (en) 1999-09-27 2001-10-03 Injection seeded F2 laser with pre-injection filter
US10/000,991 US6795474B2 (en) 2000-11-17 2001-11-14 Gas discharge laser with improved beam path
US10/006,913 US6535531B1 (en) 2001-11-29 2001-11-29 Gas discharge laser with pulse multiplier
US10/012,002 US6625191B2 (en) 1999-12-10 2001-11-30 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/036,727 US6865210B2 (en) 2001-05-03 2001-12-21 Timing control for two-chamber gas discharge laser system
US10/036,676 US6882674B2 (en) 1999-12-27 2001-12-21 Four KHz gas discharge laser system
US10/056,619 US6801560B2 (en) 1999-05-10 2002-01-23 Line selected F2 two chamber laser system
PCT/US2002/026394 WO2003021727A2 (en) 2001-08-29 2002-08-19 Line selected f2 two chamber laser system

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US20020154671A1 (en) 2002-10-24
US20040174919A1 (en) 2004-09-09
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CA2458619A1 (en) 2003-03-13
IL160584A0 (en) 2004-07-25
EP1438772A2 (en) 2004-07-21
AU2002336374A1 (en) 2003-03-18
US20040258122A1 (en) 2004-12-23
WO2003021727A3 (en) 2003-11-06
MY130568A (en) 2007-06-29
US7058107B2 (en) 2006-06-06
KR20040032988A (ko) 2004-04-17
US6801560B2 (en) 2004-10-05
EP1458066A2 (en) 2004-09-15
EP1458066B1 (en) 2009-01-21
US7218661B2 (en) 2007-05-15
EP1458066A3 (en) 2006-04-19

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