TW564585B - Line selected F2 two chamber laser system - Google Patents

Line selected F2 two chamber laser system Download PDF

Info

Publication number
TW564585B
TW564585B TW91119533A TW91119533A TW564585B TW 564585 B TW564585 B TW 564585B TW 91119533 A TW91119533 A TW 91119533A TW 91119533 A TW91119533 A TW 91119533A TW 564585 B TW564585 B TW 564585B
Authority
TW
Taiwan
Prior art keywords
laser
patent application
laser system
light
item
Prior art date
Application number
TW91119533A
Other languages
Chinese (zh)
Inventor
David S Knowles
Daniel J W Brown
Richard L Sandstrom
German E Rylov
Eckehard D Onkels
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US09/970,503 external-priority patent/US20020071468A1/en
Priority claimed from US10/000,991 external-priority patent/US6795474B2/en
Priority claimed from US10/006,913 external-priority patent/US6535531B1/en
Priority claimed from US10/012,002 external-priority patent/US6625191B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of TW564585B publication Critical patent/TW564585B/en

Links

Landscapes

  • Lasers (AREA)

Abstract

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.

Description

564585 A7 _B7___ 五、發明説明(1 ) 本發明對於以下之專利申請案主張優先權:專利申請 案號10/056,619(2002年1月23日申請)、專利申請案號 10/036,676(2001年12月21日申請)、專利申請案號 10/036,727(2001年12月21曰申請)、專利申請案號 10/012,002(2001年11月30曰申請)、專利申請案號 10/006,913(2001年11月29日申請)、專利申請案號 10/000,991(2001年'11月14日申請)、專利申請案號 09/970,503(2001年10月3日申請)、專利申請案號 09/943,343(2001年8月29日申請)、專利申請案號 09/879,311(2001年6月6日申請)、專利申請案號 09/855,310(2001年5月14日申請)、專利申請案號 09/854,097(2001年5月11曰申請)、專利申請案號 09/848,043(2001年5月3日申請)、專利申請案號 09/829,475(2001年4月9曰申請)、專利申請案號 09/771,789(2001年1月29曰申請)、專利申請案號 09/768,753(2001年1月23曰申請)、專利申請案號 09/684,629(2000年10月6日申請)、專利申請案號 09/473,795(1999年12月28日申請)、專利申請案號 09/473,852(1999年12月27曰申請)、專利申請案號 09/459,165(1999年12月10曰申請)、專利申請案號 09/309,478(1999年5月10曰申請)。本發明是有關於氣體放 電雷射以及尤其是高重覆率氟雷射。 發明背景 氣體放電式雷射 4 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 自從雷射在196G年代巾說明後*久氣體放電式雷射很 卜、的就為人所热知且可以獲得使用。在兩個電極之間之高 $放電激發雷射氣體以產生氣體增益介質。包含此增益介 質之共振腔允許光線之受激放大增強而可以雷射光束的形 式由此共振腔取出。許多此種氣體放電式雷射是在脈衝式 中操作。 受激準分子雷射 +受激準分子雷射是氣體放電式雷射之特殊形式,並且 匕們從1970年代中期以來即為人所熟知。關於受激準分子 雷射之描述(其對積體電路之微影術有用),是在1991年6月 η曰所公布之美國專利案號usp 5,023,884“緊密式受激準 刀子田射中说明。此項專利是頒發給本案申請人之雇主, 並且此項專利在此併入作為參考。此在專利案號‘884中所 說明之受激準分子雷射是一種高重覆率式脈衝雷射。此等 叉激準分子雷射當使用於積體電路微影術時,是典型地是 在生產線中整天24小時不斷地(“ar〇und_the_cl〇ck”)操作以 在每小犄生產數千個有價值的積體電路。因此,當機時間 (d〇Wn-time)是非常昂貴的。為此理由大部份的元件被組織 成模組其可以在幾分鐘内更換。使用於微影術之受激準分 子雷射典型地必須將其輸出光束之頻帶寬度減至幾分之一 微微米(10-12m)。在專利‘884中所描述形式之氣體放電式雷 射使用一種電氣脈衝功率系統以在兩個電極之間產生電氣 放電。在此種習知技術系統中,直流電源將稱為“充電電容 器”或“c0”之f容器庫(bank)充電至職設定且經控制的 564585 A7 B7 五、發明説明(3 ) 稱為對每一個脈衝之充電電壓之電壓。在此等習知技術單 元中充電電壓之大小是在大約500側1000伏特的範圍中。在 C〇被充電至預先設定之電壓之後,將固態開關關閉而允許 儲存在C〇上之電能非常快地流經一系列之磁性壓縮電路與 變壓器以跨越電極產生範圍大約在16,000V(或更大)之高 壓電位,其產生持續大約20至50奈秒(ns)之放電。 微影術光源之主要進展 如同在專利案號‘884中所描述之受激準分子雷射在 1989年至2001年時期期間成為用於積體電路微影術之主要 光源。在最現代化之積體電路製造廠中目煎有超過1000台 的此種雷射正在使用中。幾乎所有這些雷射具有在專利案 號184中所說明的基本設計特點,這些是: (1) 單一脈衝電力系統用於提供跨越之電氣脈衝,其脈 衝率是大約100至2500脈衝/秒。 (2) 單一共振腔由以下所構成:部份反射鏡式輸出耦合 器;以及線窄化單元,其由稜鏡光線擴散器、調整鏡以及 光栅所構成。 (3) 單一之放電室包含雷射氣體(KrF或ArF),兩個延伸 電極以及切向扇,用於在脈衝之間將雷射氣體在兩電極之 間流動得足夠的快以清理放電區,以及 (4) 光線監視器用於監視輸出脈衝之脈衝能量、波長與 頻帶寬度,而具有回饋控制系統用於以脈衝至脈衝為基礎 控制脈衝能量、能量劑量以及波長。 在1989〜2001年期間,此等雷射之輸出功逐漸增加, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 6 (請先閱讀背面之注意事項再填寫本頁) .、可| 564585 A7 _B7_ 五、發明説明(4 ) 且對於脈衝能量穩定、波長穩定與頻帶寬度之光線品質規 格亦變得越來越嚴格。此廣泛地使用於積體電路製造中之 一般微影術雷射模式之操作參數包括:脈衝能量為8mJ, 脈衝率為2500脈衝/秒(提供平均光線功率一直至大約20 瓦)、頻帶寬度大約〇.5pm(FWHM)以及脈衝能量穩定度為 ±0.35%。 F2雷射 F2雷射是為人所熟知。此等雷射類似於KrF與ArF雷 射。其基本的差異為氣體混合物,其在F2雷射中是一小部 份之F2而具有氦及/或氖作為緩衝氣體。此F2雷射之天然輸 出光譜是集中於兩個窄頻帶寬度之光譜線:一個相對強的 光譜線集中於大約157.63奈米(nm),以及一相對弱的光譜 線集中於大約157.52奈米。 F2雷射頻帶寬度 典型的KrF雷射具有大約300pm(10_12m)之天然頻帶寬 度,其為集中於大約248奈米之半極大全寬度(FWHM : full width half maximum)且用於微影術使用,其典型地將線寬 減少為小於0.6pm(在本說明書中除非另外說明頻帶寬度值 將稱為FWHM頻帶寬度)。ArF雷射具有大約500pm之頻帶 寬度集中於大約193奈米,且典型將線寬窄化至小於 0.5pm。此等雷射可以使用以上所提到以光柵為基礎之光 線窄化模組而在其天然頻帶寬度之大部份中相當容易地調 整。如上所說明,F2雷射典型地產生雷射光線其大部份的 能量集中在大約157.63nm與157.52nm之兩個寬的光譜特 7 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 ____B7 五、發明説明(5 ) 性(在此通常稱為“光譜線,,)中。經常,此兩個光譜線中較 弱者(即’此157.52nm光譜線)被抑制且強迫此雷射在 157.63nm光譜線操作。此157·63奈米線之天然頻帶寬度是 取決於壓力與氣體内容,並且由大約〇6pm變化至 l_29pm(FWHM)。具有頻帶寬度在此範圍中之匕雷射可以 與微影術裝置一起使用,此裝置具有反射一折射透鏡之設 計使用折射與反射光學元件,但是對於全折射透鏡設計此 雷射光線頻帶寬度可能必須減少至大約〇 1 pm以產生所想 要的結果。 注入種子(光線) 一種為人所熟知的技術用於減少氣體放電式雷射系統 (包括受激準分子雷射系統)之頻帶寬度,涉及注入窄頻帶 “種子光線”進入增益介質。在此種系統中,產生此種子光 線之雷射稱為“主振盪器”,其被設計在第一增益介質中提 供非常窄頻帶寬度之光線,且此光線在第二增益介質中被 使用此系統被稱為主振盪器功率放大器系統(Μόρα)。如果 此第二增益介質本身具有共振腔(在其中產生雷射共振), 此系統被稱為注入種子共振器(ISO)系統或主振盪器功率 振盪器(ΜΟΡΟ)系統,在此情況下此種子雷射被稱為主振盪 器且此下游系統被稱為功率振盪器。由此兩系統所構成之 雷射系統在較可比較之單室雷射系統在實質上傾向於轉 貴、較大且較複雜。因此,此兩室雷射系統之商業應用受 到限制。 因此所須要的是用於脈衝氣體放電F2雷射之更佳的雷 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)564585 A7 _B7___ V. Description of the Invention (1) The present invention claims priority to the following patent applications: Patent Application No. 10 / 056,619 (filed on January 23, 2002), Patent Application No. 10 / 036,676 (12.2001) Filed on May 21), patent application number 10 / 036,727 (filed on December 21, 2001), patent application number 10 / 012,002 (filed on November 30, 2001), patent application number 10 / 006,913 (2001 Application on November 29), Patent Application No. 10 / 000,991 (filed on November 14, 2001), Patent Application No. 09 / 970,503 (filed on October 3, 2001), Patent Application No. 09 / 943,343 ( Filed on August 29, 2001), Patent Application No. 09 / 879,311 (filed on June 6, 2001), Patent Application No. 09 / 855,310 (filed on May 14, 2001), Patent Application No. 09 / 854,097 (Application dated May 11, 2001), patent application number 09 / 848,043 (filed on May 3, 2001), patent application number 09 / 829,475 (filed on April 9, 2001), patent application number 09 / 771,789 (filed on January 29, 2001), patent application number 09 / 768,753 (filed on January 23, 2001), patent application number 09/684, 629 (filed on October 6, 2000), patent application number 09 / 473,795 (filed on December 28, 1999), patent application number 09 / 473,852 (filed on December 27, 1999), patent application number 09 / 459,165 (filed on December 10, 1999), patent application number 09 / 309,478 (filed on May 10, 1999). The present invention relates to gas discharge lasers and, in particular, high-repetition-rate fluorine lasers. Background of the Invention Gas Discharge Laser 4 (Please read the notes on the back before filling out this page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm). It has been a long time since the laser was described in the 196G towel. Discharge lasers are well known and can be used. The high $ discharge between the two electrodes excites the laser gas to produce a gas gain medium. The resonant cavity containing this gain medium allows the stimulated amplification of light to be enhanced and can be taken out from the resonant cavity in the form of a laser beam. Many such gas discharge lasers operate in pulsed mode. Excimer laser + Excimer laser is a special form of gas discharge laser and has been well known since the mid-1970s. The description of the excimer laser (which is useful for lithography of integrated circuits) is described in US Patent Case No. usp 5,023,884 “Compact Stimulated Excimer Knife Field Shot” published on June 1991 This patent is issued to the employer of the applicant of this case, and this patent is incorporated herein by reference. The excimer laser described in patent case '884 is a high-repetition type pulsed laser. These fork excimer lasers, when used in integrated circuit lithography, are typically operated in a production line 24 hours a day (“ar〇und_the_clOck”) to produce at every 犄Thousands of valuable integrated circuits. Therefore, downtime (d0Wn-time) is very expensive. For this reason, most components are organized into modules that can be replaced in minutes. Used in Lithography excimer lasers typically have to reduce the bandwidth of their output beam to a fraction of a micron (10-12m). A gas discharge laser in the form described in patent '884 uses a Electrical pulsed power system to generate between two electrodes Electrical discharge. In this conventional technology system, the DC power supply will charge the f container bank called "charging capacitor" or "c0" to the set and controlled 564585 A7 B7 V. Description of the invention (3) It is called the voltage of the charging voltage for each pulse. The magnitude of the charging voltage in these conventional technology units is in the range of about 500 volts of 1000 volts. After C0 is charged to a preset voltage, the solid-state switch Turning off allows the electrical energy stored on CO to flow very quickly through a series of magnetic compression circuits and transformers to generate a high voltage potential in the range of approximately 16,000 V (or greater) across the electrodes, which lasts approximately 20 to 50 nanoseconds (Ns) discharge. The main advances in lithography light sources, as described in Patent Case No. '884, became the main light source for integrated circuit lithography during the period 1989-2001. .More than 1,000 such lasers are being used in the most modern integrated circuit manufacturing plants. Almost all of these lasers have the basic design features described in Patent Case No. 184, These are: (1) A single-pulse power system is used to provide electrical pulses across, and its pulse rate is about 100 to 2500 pulses / second. (2) A single resonant cavity is composed of: a partial mirror output coupler; And a line narrowing unit, which consists of a chirped light diffuser, an adjustment mirror, and a grating. (3) A single discharge chamber contains a laser gas (KrF or ArF), two extension electrodes, and a tangential fan for The laser gas flows between the two electrodes fast enough between the pulses to clear the discharge area, and (4) the light monitor is used to monitor the pulse energy, wavelength and frequency bandwidth of the output pulse, and the feedback control system is used to Pulse-to-pulse based control of pulse energy, energy dose, and wavelength. During 1989 ~ 2001, the output power of these lasers gradually increased. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 6 (Please read the precautions on the back before filling this page).可 | 564585 A7 _B7_ V. Description of the Invention (4) And the light quality specifications for pulse energy stability, wavelength stability, and frequency bandwidth have become increasingly strict. The operating parameters of this general lithography laser mode widely used in integrated circuit manufacturing include: pulse energy of 8mJ, pulse rate of 2500 pulses / second (providing average light power up to approximately 20 watts), and a frequency band width of approximately 0.5pm (FWHM) and pulse energy stability were ± 0.35%. F2 laser F2 laser is well known. These lasers are similar to KrF and ArF lasers. The basic difference is a gas mixture, which is a small portion of F2 in an F2 laser and has helium and / or neon as a buffer gas. The natural output spectrum of this F2 laser is focused on two narrow-bandwidth spectral lines: a relatively strong spectral line is concentrated at about 157.63 nanometers (nm), and a relatively weak spectral line is concentrated at about 157.52 nanometers. F2 laser radio frequency band width A typical KrF laser has a natural frequency band width of about 300pm (10-12m), which is a full width half maximum (FWHM) of about 248 nanometers and is used for lithography. It typically reduces the line width to less than 0.6 pm (in this specification, unless otherwise stated, the bandwidth value will be referred to as the FWHM bandwidth). ArF lasers have a frequency band width of about 500pm concentrated on about 193nm and typically narrow the line width to less than 0.5pm. These lasers can be adjusted relatively easily in a large part of their natural frequency band width using the grating-based optical narrowing module mentioned above. As explained above, F2 lasers typically produce laser light. Most of their energy is concentrated in two broad spectrums of approximately 157.63nm and 157.52nm. (Please read the precautions on the back before filling this page) This paper The scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 ____B7 V. Description of the invention (5) In general (herein commonly referred to as "spectral lines,"). Often, the weaker of the two spectral lines (That is, the 157.52nm line) is suppressed and forced to operate in the 157.63nm line. The natural band width of the 157 · 63nm line depends on the pressure and gas content, and changes from about 6:00 pm to l_29pm (FWHM). Lasers with a band width in this range can be used with lithography devices. This device has a reflective-refractive lens design that uses refractive and reflective optics, but for total refractive lenses this laser light is designed. The frequency bandwidth may have to be reduced to about 0.1 pm to produce the desired result. Seed injection (light) A well-known technique for reducing gas discharge laser systems ( Including the excimer laser system), which involves injecting a narrow-band "seed light" into the gain medium. In this system, the laser that generates this seed light is called the "main oscillator", which is designed at The first gain medium provides a very narrow band of light, and this light is used in the second gain medium. This system is called the main oscillator power amplifier system (Μόρα). If the second gain medium itself has a resonant cavity ( Laser resonance is generated in it), this system is called injection seed resonator (ISO) system or main oscillator power oscillator (ΜΟΟ) system, in which case this seed laser is called main oscillator and this downstream The system is called a power oscillator. The laser system composed of these two systems tends to be more expensive, larger and more complicated than the comparable single-chamber laser system. Therefore, this two-chamber laser system Commercial applications are limited. Therefore, what is needed is a better laser paper size for pulsed gas discharge F2 lasers, which applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) (Please read the back of the precautions to fill out this page)

564585 A7 __B7__ 五、發明説明(6 ) (請先閲讀背面之注意事項再填寫本頁) 射設計,用於在大約4000脈衝/秒或更大的範圍中之重覆率 操作,而允許精確地控制包括波長與脈衝能量之所有光線 品質參數。 發明概要 本發明提供一種注入種子模組式氣體放電雷射系統, 能夠在以下的條件下產生高品質脈衝雷射光線:脈衝速率 大約4000Hz或更大、且脈衝能量大約5至10mJ(毫焦耳)或更 大用於產生大約20至40W(瓦特)或更大的整合輸出。設有 兩個各別的放電室,其中的一個是主振盪器的一部份產生 非常窄頻帶之種子光線其在第二放電室中被放大。此等室 可以被分別控制以允許在主振盪器中波長參數之最適化以 及在放大室中脈衝能量參數之最適化。較佳的實施例是F2 雷射系統設計作為ΜΟΡΑ,並且特別地設計使用作為積體 電路微影術之光源。在此較佳實施例中,此等室與雷射光 學裝置均安裝於雷射殼體中之垂直光學台上。在較佳 ΜΟΡΑ的實施例中,各室包括單一之切向扇,其藉由在脈 衝間少於大約0.25毫秒的時間中從放電區清除碎屑而允許 在4000Hz或更大的脈衝速率操作。此主振盪器設有線選擇 裝置用於選擇最強的F2光譜線。此較佳實施例亦包括脈衝 放大模組將由功率放大器來的各脈衝分割成兩個或四個脈 衝、以便實質上降低微影術光學裝置之損壞率。本發明之 較佳實施例使用“三波長平台”。這包括設有殼體之光學台 與一般設備佈局,此對三種形式之放電雷射系統(即,KrF、 ArF以及F2雷射)之每一個均相同,此三種系統被期望在21 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -9 - 564585 A7 B7 五、發明説明(9 ) 重覆速率 脈衝能量 脈衝期間 4 kHz 7 mJ 24 ns 4 kHz 7 mJ 40 ns 4 kHz 10 mJ 24 ns 4 kHz 12 mJ 12 ns 此較佳雷射系統2之主要元件顯示於第1圖中,其包括: (1) 雷射系統框架4其被設計以容納除了 AC/DC電源模 組之外的雷射之所有模組, (2) AC/DC高壓電源模組6, (3) 共振充電模組7用於以每秒4000次充電之速率將兩 個充電電容器庫充電至大約1000伏特, (4) 兩個轉換器模組8A與8B各包括上述充電電容器庫 之一且各包括一轉換電路,用於由儲存在充電電容器庫之 能量而形成非常短之高壓電性脈衝,其大約為16,000伏特 且期間為大約1微秒(/zs), (5) 兩個放電室模組安裝於框架4中頂部底部結構中, 此模組包括主振盪器模組10與功率放大器模組120各模組 包括放電室10A與12A以及安裝於室之頂上之壓縮頭10B 與12B。此壓縮頭(以聘間的方式)將來自轉換器模組之電性 脈衝從大約1微秒壓縮至大約50奈秒而具有相對應之電流 增加, (6) 主振盪器光學裝置包括後鏡100與線選擇裝置LSP, 10C,其包括一但輸出耦合器與一個5稜鏡之線選擇器, 12 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 _B7_ 五、發明説明(10 ) (7) 波前工程箱14包括光學裝置與儀器,用於將種子光 線成形與導入於功率放大器中,並監聽此MO輸出功率, (8) 光線穩定器模組16包括波長、頻帶寬度以及能量監 視器, (9) 開閉器模組18, (10) 輔助室其中沒有氣體控制模組20、冷卻水分配模 組22以及通風模組24, (11) 客戶介面模組26, (12) 雷射控制模組28,以及 (13) 光態燈30 對於許多應用而言此雷射系統較佳包括脈衝延長單元(末 圖示)將脈衝之期間延長超過大約12奈秒。 U-形光學台 在第1圖的實施例中,如同於第1A與1B圖中所示,MO 與PA之光學裝置均安裝於U-形光學台上。此U-形光學台是 移動式地安裝於雷射的底部,其方式是在美國專利案號No. 5,863,017中說明而在此併入作為參考。MO與PA之室均未 安裝於台上但各由三個輪子(兩個在一邊且一個在另一邊) 支撐在軌道上(其中室2之底部框架支撐)(此輪與軸道較佳 配置成如同在美國專利案號6,109,574中所說明,而在此併 入作為參考)。此配置使得光學裝置對室所造成的振動隔 IT0 第二一般佈局設計 於第1C圖中所示之第二一般佈局設計類似於上述第 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -13 - (請先閲讀背面之注意事項再填寫本頁)564585 A7 __B7__ V. Description of the invention (6) (Please read the precautions on the back before filling out this page) The radio design is used for repetition rate operation in the range of about 4000 pulses / second or more, allowing accurate Controls all light quality parameters including wavelength and pulse energy. SUMMARY OF THE INVENTION The present invention provides a seed-injected modular gas discharge laser system capable of generating high-quality pulsed laser light under the following conditions: a pulse rate of about 4000 Hz or greater, and a pulse energy of about 5 to 10 mJ (millijoules) Or greater is used to produce an integrated output of approximately 20 to 40W (watts) or greater. There are two separate discharge cells, one of which is a part of the main oscillator that produces a very narrow band of seed light which is amplified in the second discharge cell. These chambers can be controlled separately to allow optimization of the wavelength parameters in the main oscillator and optimization of the pulse energy parameters in the amplification chamber. A preferred embodiment is that the F2 laser system is designed as MOPA, and specifically designed to be used as a light source for integrated circuit lithography. In this preferred embodiment, these chambers and laser optics are mounted on a vertical optical table in a laser housing. In the preferred MOPA embodiment, each chamber includes a single tangential fan that allows operation at a pulse rate of 4000 Hz or greater by removing debris from the discharge zone in less than about 0.25 milliseconds between pulses. This main oscillator is equipped with a line selection device for selecting the strongest F2 spectral line. This preferred embodiment also includes a pulse amplification module that divides each pulse from the power amplifier into two or four pulses to substantially reduce the damage rate of the lithography optical device. The preferred embodiment of the present invention uses a "three-wavelength platform." This includes an optical table with a housing and general equipment layout. Each of the three types of discharge laser systems (ie, KrF, ArF, and F2 lasers) is the same. These three systems are expected to be at 21 paper sizes. Applicable to China National Standard (CNS) A4 specification (210X297 mm) -9-564585 A7 B7 V. Description of invention (9) Repeat rate pulse energy pulse period 4 kHz 7 mJ 24 ns 4 kHz 7 mJ 40 ns 4 kHz 10 mJ 24 ns 4 kHz 12 mJ 12 ns The main components of this preferred laser system 2 are shown in Figure 1 and include: (1) Laser system frame 4 which is designed to accommodate other than AC / DC power modules All the modules of the laser, (2) AC / DC high voltage power supply module 6, (3) Resonant charging module 7 is used to charge the two charging capacitor banks to about 1000 volts at a rate of 4,000 charges per second (4) Each of the two converter modules 8A and 8B includes one of the above-mentioned charging capacitor banks and each includes a conversion circuit for forming a very short high-voltage electrical pulse from the energy stored in the charging capacitor banks. 16,000 volts with a period of approximately 1 microsecond (/ zs), (5) two A discharge chamber module is installed in the top and bottom structure in the frame 4. This module includes a main oscillator module 10 and a power amplifier module 120. Each module includes discharge chambers 10A and 12A and a compression head 10B installed on the top of the chamber With 12B. This compression head (by way of appointment) compresses the electrical pulse from the converter module from about 1 microsecond to about 50 nanoseconds with a corresponding increase in current. (6) The main oscillator optics includes a rear mirror 100 and line selection device LSP, 10C, which includes an output coupler and a 5mm line selector, 12 (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 564585 A7 _B7_ V. Description of the invention (10) (7) The wavefront engineering box 14 includes optical devices and instruments for shaping and introducing seed light into a power amplifier and monitoring the output power of this MO (8) Light stabilizer module 16 includes wavelength, frequency bandwidth, and energy monitors, (9) Switch module 18, (10) Auxiliary room without gas control module 20, cooling water distribution module 22, and ventilation Modules 24, (11) Customer interface modules 26, (12) Laser control modules 28, and (13) Light-state lamps 30 For many applications, this laser system preferably includes a pulse extension unit (not shown) ) Extend the duration of the pulse beyond About 12 nanoseconds. U-shaped optical table In the embodiment of Fig. 1, as shown in Figs. 1A and 1B, the optical devices of MO and PA are mounted on the U-shaped optical table. This U-shaped optical table is mobilely mounted to the bottom of the laser in the manner described in U.S. Patent No. 5,863,017 and incorporated herein by reference. The rooms of MO and PA are not installed on the platform but each is supported on the track by three wheels (two on one side and one on the other side) (of which the bottom frame of chamber 2 is supported) (the wheel and the axle are better configured) As described in US Patent No. 6,109,574, which is incorporated herein by reference). This configuration enables the vibration isolation IT0 caused by the optical device to the room. The second general layout design is shown in Figure 1C. The second general layout design is similar to the above-mentioned first paper standard applicable to China National Standard (CNS) A4 (210X297) %) -13-(Please read the notes on the back before filling this page)

、可I ___£7_ 564585 A7 五、發明説明(11 ) 二一般佈局設計,但包括以下特點: (1) 此兩室與雷射光學裝置是安裝於垂直光學台151 上’其以可移動式的安裝(如同於下節中說明)於雷射箱4 中。此等室是支撐於硬的懸臂上而以螺栓於光學台。在此 設計中主振盪器10是安裝於功率放大器12上。 (2) 尚壓電源6B是包括於雷射箱4中。此兩室p2 4000Hz 須要兩個1200V電源。然而,雷射箱設有空間用於其他的 局壓電源,這將會被須要用於6000Hz F2雷射系統。 (3) 兩個雷射室之各室與用於此等室之脈衝電源是非 常類似於使用於4000Hz單室ArF雷射系統之室與脈衝電 源’其在美國專利申請案號〇9/854,〇97中說明而在此併入 作為參考。 (4) 設置在光學台11之後之脈衝放大器模組13是包括 於此實施例中以延長由功率放大器所出脈衝的期間。 (5) 在線選擇裝置i〇C中之主振器光線輸出光線裝置將 來自MO之輸出光線導引至功率放大器輸入光學裝置14c 且用於一次通過功率放大器12。此來自功率放大器12之短 脈衝(大約12奈秒)輸出在位於光學台u後之脈衝延長單元 13中延長。此經由包括脈衝延長器之雷射系統之整個光線 路徑是包含於真空殼體(未圖示)中,且此殼體以氪或氦清 局設計 -~~~- 第三一般佈局設計之部份是顯示於第1D圖。此佈局設 计谷納本發明之實施例其使用雷射室,其中放電區的長度 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 14 (請先閲讀背面之注意事項再填寫本頁) 、^τ— 564585 A7 _B7_ 五、發明説明(12 ) 大約是前兩個實施例放電區長度之一半。這即是,相較於 大約53公分之典型長度,此放電區長度大約為26.5公分。 在此情形中,此主振盪器10(1)之共振腔是以光線經由放電 區通過兩次而界定,此放電區是在最大反射鏡10E與輸出 耦合器(其與LSP 10C中之5稜鏡線選擇器設置在一起)之 間。在此佈局設計中,光線經由功率放大器12⑴通過四次。 第一次通過是從鏡子15A反射後經由放電區之下半部其角 度對準電極(例如其角度右放電區之下半部由左至右大約 10毫强的角度),第二次通過是在光線由鏡子15B反射後經 由上半部其角度是由右至左以大約4度之角度。第三次通過 是由兩面鏡子反射後對準電極經由放電區之上半部,且最 後一次通過是由鏡子15D反射後對準電極經由放電區之下 半部。此最後之通過建立此功率放大器輸出光線。它繞過 鏡子15C且由鏡子(未圖式)導引至脈衝放大器單元(亦未圖 示)。 在以上二個佈局設計之每一個中較佳設有規定以允許 此輸出光'線由雷射殼體之左邊或雷射殼體之右邊射出以便 適合客戶之偏好而不須作重大設計之改變。 在以上佈局設計之每一個中,可以藉由將轉換器與在 縮頭組合至單一模組而達成性能表現之改善。本案申請人 在過去反對此種組合,因為任何元件之故障須要將整個模 組更換。然而,本案申請人的經驗是這些單元是非常可靠 ::致於此種組合模組目前是可行的。事實上,在脈衝功率 單元中之數個故障原因之一是連接此兩模組電纔之故障。, 可 I ___ £ 7_ 564585 A7 V. Description of the invention (11) 2. General layout design, but including the following features: (1) The two chambers and laser optics are installed on the vertical optical table 151. The installation (as explained in the next section) is in the laser box 4. These chambers are supported on rigid cantilevers and bolted to the optical table. The main oscillator 10 is mounted on the power amplifier 12 in this design. (2) The back-up power supply 6B is included in the laser box 4. This two-chamber p2 4000Hz requires two 1200V power supplies. However, the laser box has room for other local voltage sources, which will be required for 6000Hz F2 laser systems. (3) Each of the two laser chambers and the pulse power source used in these chambers are very similar to those used in a 4000 Hz single-chamber ArF laser system and its pulse power source, which is in U.S. Patent Application No. 09/854 No. 097, which is incorporated herein by reference. (4) The pulse amplifier module 13 provided behind the optical table 11 is included in this embodiment to extend the period of the pulses emitted by the power amplifier. (5) The main oscillator light output light device in the on-line selection device iOC directs the output light from the MO to the power amplifier input optical device 14c and is used to pass through the power amplifier 12 at one time. This short pulse (approximately 12 nanoseconds) output from the power amplifier 12 is extended in a pulse extension unit 13 located behind the optical table u. The entire light path through the laser system including the pulse extender is contained in a vacuum housing (not shown), and this housing is designed with radon or helium clearance-~~~-Part of the third general layout design Copies are shown in Figure 1D. This layout design uses the laser chamber in the embodiment of the present invention, in which the length of the discharge area and the paper size are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 14 (Please read the precautions on the back before filling in this Page), ^ τ— 564585 A7 _B7_ 5. Description of the invention (12) is about half of the length of the discharge region of the first two embodiments. That is, compared to a typical length of about 53 cm, the length of this discharge region is about 26.5 cm. In this case, the resonant cavity of the main oscillator 10 (1) is defined by the light passing through the discharge region twice. This discharge region is between the maximum mirror 10E and the output coupler (which is 5 edges from the LSP 10C). Mirror selectors are set together). In this layout design, light passes through the power amplifier 12⑴ four times. The first pass is reflected from the mirror 15A and the electrode is aligned with the angle of the lower half of the discharge area (for example, the angle of the lower half of the right discharge area is about 10 millimeters from left to right). The second pass is After the light is reflected by the mirror 15B, the angle is about 4 degrees from right to left through the upper half. The third pass is reflected by two mirrors and the alignment electrode passes through the upper half of the discharge area, and the last pass is reflected by the mirror 15D and the alignment electrode passes through the lower half of the discharge area. This last pass sets up the power amplifier to output light. It bypasses the mirror 15C and is guided by the mirror (not shown) to the pulse amplifier unit (also not shown). Provisions are preferably provided in each of the above two layout designs to allow this output light 'line to be emitted from the left side of the laser housing or the right side of the laser housing so as to suit the customer's preference without major design changes. . In each of the above layout designs, performance improvement can be achieved by combining the converter and the shrink head into a single module. The applicant in this case has opposed such a combination in the past, because any component failure requires the entire module to be replaced. However, the applicant's experience in this case is that these units are very reliable :: that such a combination module is currently feasible. In fact, one of the causes of several failures in the pulsed power unit is the failure of the electrical power connected to the two modules.

本紙張尺度適财關家群(⑽)M規格⑽X29^D 15 (請先閲讀背面之注意事項再填寫本頁) 訂-! 564585 A7 ____B7 五、發明説明(l3 ) 而在組合的模組中不須要電纜。 (請先閲讀背面之注意事項再填寫本頁) 以下將更詳細說明上述較佳雷射系統與模組之設計與 操作。 主振盪器 在第1與1C圖中所示之主振盪器10在許多方面類似於 I知技術之ArF雷射,例如在美國專利案號5,〇23,884與 6,128’323中所描述以及在美國專利中請案號⑽以外州中 所況明之ArF雷射,所例外不同的是其室與共振腔光學裝 置疋没汁用於在157.63奈米之光譜範圍之&雷射操作。並 且其輸出脈衝能量是大約〇.11^至1.〇1^而不是大約5mJ。 然而提供對於‘323雷射主要的改進以允許在4〇〇〇Hz或更大 速率操作。此主減ϋ可以被最適化料包括線寬控制之 光譜表現。如同在第1圖、第2圖與第3圖中所示,主振盪器 包括放電室10Α,其中沒有一對延伸電極1〇八2與1〇八3,各 約50公分長而相隔大約12mm。陽極1〇八4是安裝於形成流 之陽極支撐桿10A6上。設有四個各別之水冷式熱交換單元 10A8。正切扇10A10由兩個馬達(未圖式)驅動,而在電極 間提供速度大約80m/s之雷射氣流。此室包括窗口單元(未 圖式)具有CaF2窗設置成與雷射光線成大約47。。靜電過濾、 器單元在室的中央具有入口,其過濾氣流之一小部份如第2 圖中11所示,且經淨化之氣體被導入於窗口單元中(其方式 如在美國專利案號5,359,620中說明而在此併入作為參 考),以將放電碎屑從窗口去除。此主振盪器之增益區是藉 由雷射氣體在電極之間放電所造成,在此實施例中之氣體 本紙張尺度適用中國國家標準(CNS) A4规格(210X297公釐) -16 - 564585 A7 B7 五、發明説明(Μ ) 疋由大約0.5% F2以及其餘部份是氖、氦或氖氦之組合所構 成。此氣流在下次脈衝之前從放電區清除各次放電之碎 屑。共振腔是由位於LSP 10C中的輪出耦合器在其輸出側 產生。此輸出搞合器是由未經塗佈之CaF2反射光學裝置構 成,其安裝成垂直於光線方向,以致於將在大約15711111雷 射光之大約5%反射,且通過此157nm光之大約95%。如第1 圖中所示,此共振腔之對面邊界是最大反射鏡1〇〇。此線選 擇裝置10C在以下參考第16圖更詳細說明。 變 在較佳實施例中,此用於主振盪器與功率放大器之主 充電電容器庫是並聯充電以減少不穩定之問題。這是所期 望的,因為在此兩個脈衝功率系統之脈衝壓縮電路中用於 脈衝壓縮的時間是取決於充電電容器之充電位準。此來自 功率放大器之脈衝能量輸出較佳是藉由調整充電電壓而在 脈衝一至一脈衝的基礎上控制。此有些限制了使用電壓以 控制主振藍^§光線參數。然而’雷射氣體壓力與匕濃度可 以被容易地控制而在廣大範圍之脈衝能量上達成所期望之 光線參數。頻帶寬度隨著降低之F2濃度與雷射氣體壓力而 減少。對於主振盪器而言,此介於放電與發出光線之間之 時間是F2濃度(Ins/kPa)之函數,因此F2之濃度可以被改 以改變計時,但此可能為非所期望的,因為它會使得雷 光線控制的其他方面變得複雜。 功率放大器 所 此三個實施例的每一個中之功率放大器是由雷射室 構成,其非常類似於相對應之主振盪器放電室。具有此兩 17 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(l5 ) 個各別的室允許脈衝能量與於一系列脈衝之整合能量(稱 為劑量)至相當大的程度各別把由波長與頻帶寬度控制。此 允許較佳的劑量穩定。此室之所有的元件在製造過程期間 是相同而可互相交換的。然而在操作中,與PA相較比在M0 中之氣體壓力較佳是實質上較低。此在第1圖中所示之功率 放大器之壓縮頭12B亦在此實施例中與壓縮頭10B實質上 相同,且此壓縮頭之元件在製造期間亦可互相交換。所不 同的是,相較於PA此壓縮頭電容器庫電容器對於M0是更 廣泛地設置以產生實質上較高的電感。在PA中電極間隔較 佳是大約8mm(相較用於M0之大約12mm)。此脈衝功率系 統之室與電性元件之相似、幫助以確保此形成脈衝電路之 計時特性相同或實質上相同、以致將振動問題最小化。 如上所說明,此功率放大器被設計成用於雷射光單次 通過在第1圖與第1C圖實施例中功率放大器放電室之放電 區,且用於四次通過在第1D圖實施例中之放電區。在第1 圖的實施例中,線之選擇是在LSP 10C中發生而使用在第 16圖中所顯示之五稜鏡線選擇器。線之選擇較佳是在MO 之增益介質之下游,因為相較於KrF與ArF雷射,在此等F2 雷射中之增益是非常的高。此線選擇種子光線由是鏡子 14A向上反射並且水平反射用於如上所述的一次通過功率 放大器。此充電電壓較佳是在脈衝一至一脈衝的基礎上選 擇以維持期望之脈衝與劑量能量。在功率放大器中可以調 整F2濃度與雷射氣體壓力,以提供充電電壓所期望之操作 範圍。可以選擇所期望範圍以產生所期望之dE/dV值,因 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 18 (請先閲讀背面之注意事項再填寫本頁) 、^τ— 564585 A7 ---------B7 _ 五、發明説明(16 ) ' — (請先閲讀背面之注意事項再填寫本頁) 為能量對電壓之變化是Fa濃度與雷射氣體壓力之函數。此 光線注入之計時較佳是依據充電電壓。此光線注入之頻率 =佳疋问而將雷射室的情況保持得相當恆定且可以連續或 幾乎連續。此等實施例的一些使用者可能偏好在&注入之 間較長的期間(例如兩小時)。 脈衝功率電路 在第1、1C、1D圖所示之較佳實施例中,此基本脈衝 功率電路是類似於用於微影術之習知技術受激準分子雷射 光源之脈衝功率電路。然而,設有用於各放電室之充電電 容器之下游分別脈衝功率電路。較佳是單一共振充電器將 兩個並聯之充電電容器庫充電,以確保兩個充電電容器庫 被充電至剛好相同的電座。亦設有重要之改良以調整脈衝 功率電路70件之溫度。在較佳實施例中,此等飽和電感器 之磁核心的溫度被監視,並且在回饋電路中使用溫度信號 以調整在此兩室中放電之相對時間。第5八與5;6圖顯示使用 於M0之較佳基本脈衝功率電路之重要元件。此相同之基 本電路亦使用於PA。 共振充電器 在第5B圖中顯示較佳共振充電系統。其主要之電路元 件為: II :具有恆定DC電流輸出之三相電源3〇〇。 C-1 :電源電容器302,其與現有之c0電容器42是相等 的大小等級或更大。The paper size is suitable for the financial family (⑽) M size ⑽X29 ^ D 15 (Please read the precautions on the back before filling in this page) Order-! 564585 A7 ____B7 V. Description of the invention (l3) It is not necessary in the combined module cable. (Please read the precautions on the back before filling this page) The design and operation of the above-mentioned preferred laser systems and modules will be explained in more detail below. Main Oscillator The main oscillator 10 shown in Figures 1 and 1C is similar in many respects to ArF lasers of known technology, such as described in U.S. Patent Nos. 5, 〇23,884 and 6,128'323 and In the US patent, the ArF laser stated in other states is requested, with the exception that its chamber and cavity optics annihilation juice is used for & laser operation in the spectral range of 157.63 nm. And its output pulse energy is about 0.11 ^ to 1.01 ^ instead of about 5mJ. However, major improvements are provided for '323 lasers to allow operation at 4,000 Hz or greater. This main reduction can be optimized for spectral performance including line width control. As shown in Figures 1, 2 and 3, the main oscillator includes a discharge chamber 10A, without a pair of extension electrodes 1082 and 1083, each about 50 cm long and about 12 mm apart. . The anode 1084 is mounted on the anode support rod 10A6 that forms the current. There are four separate water-cooled heat exchange units 10A8. The tangential fan 10A10 is driven by two motors (not shown), and provides a laser airflow at a speed of about 80 m / s between the electrodes. This room includes a window unit (not shown) with a CaF2 window set to approximately 47 from the laser light. . The electrostatic filter unit has an inlet in the center of the chamber. A small portion of the filtered airflow is shown as 11 in Figure 2. The purified gas is introduced into the window unit (in the same manner as in US Patent No. 5,359,620. And is incorporated herein by reference) to remove discharge debris from the window. The gain region of this main oscillator is caused by the discharge of laser gas between the electrodes. In this embodiment, the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -16-564585 A7 B7 V. Description of the Invention (M) Rhenium is composed of about 0.5% F2 and the rest is a combination of neon, helium, or neon helium. This airflow removes debris from each discharge from the discharge area before the next pulse. The resonant cavity is generated on its output side by a wheel-out coupler located in the LSP 10C. This output coupler consists of an uncoated CaF2 reflective optical device, which is mounted perpendicular to the direction of the light so that it reflects about 5% of the laser light at about 15711111 and passes about 95% of this 157nm light. As shown in Figure 1, the opposite boundary of this cavity is the largest mirror 100. This line selection device 10C is described in more detail below with reference to FIG. Variations In a preferred embodiment, the main charging capacitor bank for the main oscillator and the power amplifier is charged in parallel to reduce the problem of instability. This is expected because the time for pulse compression in the pulse compression circuit of these two pulse power systems depends on the charge level of the charging capacitor. The pulsed energy output from the power amplifier is preferably controlled on a pulse-to-pulse basis by adjusting the charging voltage. This somewhat limits the use of voltage to control the main vibration light parameters. However, the 'laser gas pressure and dagger concentration can be easily controlled to achieve the desired light parameters over a wide range of pulse energies. The bandwidth decreases with decreasing F2 concentration and laser gas pressure. For the main oscillator, the time between discharge and light emission is a function of the F2 concentration (Ins / kPa), so the F2 concentration can be changed to change the timing, but this may be undesirable because It complicates other aspects of thunder light control. Power Amplifier The power amplifier in each of these three embodiments consists of a laser chamber, which is very similar to the corresponding main oscillator discharge chamber. With these two 17 (please read the notes on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 B7 V. Description of the invention (l5) Allowed by each room The pulse energy and the integrated energy (called the dose) in a series of pulses are controlled to a considerable extent by the wavelength and the bandwidth respectively. This allows better dose stabilization. All components in this chamber are identical and interchangeable during the manufacturing process. In operation, however, the gas pressure in M0 is preferably substantially lower than that of PA. The compression head 12B of the power amplifier shown in FIG. 1 is also substantially the same as the compression head 10B in this embodiment, and the components of the compression head can also be exchanged with each other during manufacturing. The difference is that compared to PA, this compression head capacitor bank capacitor is more widely set for M0 to produce a substantially higher inductance. The electrode spacing in PA is preferably about 8 mm (compared to about 12 mm for M0). The chamber of this pulsed power system is similar to the electrical components, helping to ensure that the timing characteristics of this pulsed circuit are the same or substantially the same, so as to minimize vibration problems. As explained above, this power amplifier is designed to be used for a single pass of the laser light in the discharge area of the power amplifier discharge chamber in the embodiments of Figs. 1 and 1C, and for four passes in the embodiment of Fig. 1D. Discharge area. In the embodiment of FIG. 1, the line selection occurs in LSP 10C and the five-line selector shown in FIG. 16 is used. The selection of the line is preferably downstream of the gain medium of MO, because the gain in these F2 lasers is very high compared to KrF and ArF lasers. This line selects the seed rays which are reflected upward by the mirror 14A and horizontally for a one-pass power amplifier as described above. This charging voltage is preferably selected on a pulse-to-pulse basis to maintain the desired pulse and dose energy. The F2 concentration and laser gas pressure can be adjusted in the power amplifier to provide the desired operating range of the charging voltage. The desired range can be selected to produce the desired dE / dV value, as this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 18 (Please read the notes on the back before filling this page) — 564585 A7 --------- B7 _ 5. Description of the invention (16) '— (Please read the precautions on the back before filling this page) The change in energy to voltage is Fa concentration and laser gas pressure Of functions. The timing of this light injection is preferably based on the charging voltage. The frequency of this light injection = good question and keep the laser chamber condition quite constant and can be continuous or almost continuous. Some users of these embodiments may prefer a longer period (e.g., two hours) between & injections. Pulse Power Circuit In the preferred embodiment shown in Figures 1, 1C, and 1D, this basic pulse power circuit is a pulse power circuit similar to the conventional excimer laser light source used in lithography. However, a separate pulse power circuit is provided downstream of the charging capacitor for each discharge cell. Preferably, a single resonant charger charges two parallel capacitor banks to ensure that the two capacitor banks are charged to exactly the same electrical base. There are also important improvements to adjust the temperature of 70 pieces of pulse power circuit. In the preferred embodiment, the temperature of the magnetic core of these saturated inductors is monitored, and a temperature signal is used in the feedback circuit to adjust the relative time of discharge in the two chambers. Figures 5-8 and 5; 6 show important components of a better basic pulsed power circuit for M0. This same basic circuit is also used in PA. Resonant Charger Figure 5B shows the preferred resonant charging system. The main circuit components are: II: Three-phase power supply 300 with constant DC current output. C-1: Power supply capacitor 302, which is equal to or larger than the conventional c0 capacitor 42.

Ql、Q2、Q3 :開關以控制用於充電之電流流動,並 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) · 19 564585 A7 £7_ 五、發明説明(17 ) — — 在C〇上維持經調節之電壓。Ql, Q2, Q3: switches to control the current flow for charging, and this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public love) · 19 564585 A7 £ 7_ V. Description of the invention (17) — — The regulated voltage is maintained at C0.

Dl、D2、D3 :提供單向流動之電流。 R1與R2 :提供電壓回饋至控制電路。 R3 :在少量過度充電時,允許將q上之電壓快速放電。 L1 :在C-1電容器302與C〇電容器庫42之間之共振電感 器,以限制電流流動並設定充電轉送時間。 控制板304 :根據電路回饋參數而命令Qi、q2、q3開 放與關閉。 此電路包括開關Q2與二極體D3,其在一起為人所知為 De-Qing開關。此種開關藉由允許控制單元在共振充電過程 期間將電感器關閉而改善電路之調節。此“De-Qing”開關防 止儲存在充電電感器L1電流中之額外能量被轉送至電容 器C〇。 在須要雷射脈衝之前,在電容器C-1上之電壓被充電至 600-800伏特且開關Q1-Q3開啟(0pen)在雷射命令下Qi會關 閉(close)。在此時電流會從C-1經由充電電感gL1流至c〇。 如同在前節中說明,在控制板上計算機會評估相對於來自 雷射之命令電壓設定點之在CG上之電壓與流、L1之電 流。而當在CO電容器庫上之電壓加上儲存在電容器乙丨中相 等之能量等於所期望之命令電壓時Q1會開啟。此計算為· Vf=[Vc〇s2 + ((Li*ILis2)/C〇)]0·5 其中:Dl, D2, D3: Provide unidirectional current flow. R1 and R2: provide voltage feedback to the control circuit. R3: Allows the voltage on q to be quickly discharged when a small amount of overcharging occurs. L1: Resonant inductor between C-1 capacitor 302 and Co capacitor bank 42 to limit current flow and set charge transfer time. Control board 304: Command Qi, q2, q3 to open and close according to the circuit feedback parameters. This circuit includes a switch Q2 and a diode D3, which together are known as a De-Qing switch. This switch improves the regulation of the circuit by allowing the control unit to turn off the inductor during the resonant charging process. This "De-Qing" switch prevents the extra energy stored in the current of the charging inductor L1 from being transferred to the capacitor C0. Before the laser pulse is required, the voltage on capacitor C-1 is charged to 600-800 volts and switches Q1-Q3 are turned on (0pen). Qi will be closed under the laser command. At this time, the current will flow from C-1 to c0 via the charging inductance gL1. As explained in the previous section, the computer evaluates the voltage and current on CG and the current on L1 with respect to the command voltage set point from the laser on the control board. Q1 will turn on when the voltage on the CO capacitor bank plus the equivalent energy stored in capacitor B equals the desired command voltage. This calculation is Vf = [Vc〇s2 + ((Li * ILis2) / C〇)] 0 · 5 where:

Vf=在Q1開啟後在C〇上之電壓且在L1中之電流變為雯。 Vc〇s=當Q1開啟時在C〇上之電壓。 20 (請先閲讀背面之注意事項再填寫本頁) .、訂—Vf = voltage on C0 after Q1 is turned on and current in L1 becomes Wen. Vc0s = voltage on Co when Q1 is on. 20 (Please read the notes on the back before filling this page).

本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 —~ ----— B7____ 五、發明説明(18 ) lus =當Q1開啟時流經l 1之電流。 在Q1開啟後,此儲存在L1中的能量經由D 2開始轉送至 C0電容器庫一直到在c〇電容器庫上之電壓大約等於命令 電壓。在此時Q2關閉且電流停止流至c〇並經D3導引。除 此de qing電路之外,Q3與R3形成調降(bleed-down)電路 而允許將在C0上之電壓作額外精細的調整。 當流經電感器L1之電流停止時,控制板將命令此調降 電路216之開關Q3關閉,且在c0上之電壓調降至所期望之 控制電壓;然後開關Q3被開啟。此電容器c〇與電容器R3 之時間常數應足夠的快將電容器C〇調降至命令電壓,而不 會占用整個充電週期之可觀數量的時間。 因此,此共振充電器可以被設計具有三位準之調降控 制。稱微粗略之調節是由能量計算器所提供,且在充電週 期期間將開關Q1開啟。當在C〇電容器庫上之電壓接近目 標值時將此de-qing開關關閉,當在C〇上的電壓是在或稍微 超過目標值時停止此共振充電。在較佳實施例中,使用開 關Q1與de-qing開關以提供優於±〇·ι%之調節準確度。如果 須要額外的調節,可以使用電壓調節之第三控制。此為開 關Q3與電阻器R3(在第5B圖中顯示為216)之調降電路,將 CO放電降低至準確的目標值。 CO下游之改良 如同以上所示,本發明之MO與PA之脈衝功率系統各 使用如同在習知技術系統中所使用之相同的基本設計(第 5A圖)。然而,須要在基本設計中一些重大之改良而用於 本紙張尺度適用中國國家標準A4規格(21〇χ297公釐) 21 (請先閲讀背面之注意事項再填寫本頁) 訂—This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 564585 A7 — ~ ----— B7____ 5. Description of the invention (18) lus = current flowing through l 1 when Q1 is on. After Q1 is turned on, the energy stored in L1 is transferred to the C0 capacitor bank through D2 until the voltage on the C0 capacitor bank is approximately equal to the command voltage. At this time Q2 is turned off and the current stops flowing to co and is guided by D3. In addition to this de qing circuit, Q3 and R3 form a bleed-down circuit to allow additional fine adjustment of the voltage on C0. When the current flowing through the inductor L1 stops, the control board will order the switch Q3 of the down-regulation circuit 216 to close and the voltage on c0 will be reduced to the desired control voltage; then the switch Q3 will be turned on. The time constant of capacitor C0 and capacitor R3 should be fast enough to reduce capacitor C0 to the command voltage without occupying a considerable amount of time during the entire charging cycle. Therefore, this resonance charger can be designed with three-level down-regulation control. The slightly coarse adjustment is provided by the energy calculator and the switch Q1 is turned on during the charging cycle. When the voltage on the capacitor bank of Co is close to the target value, turn off the de-qing switch. When the voltage on Co capacitor is at or slightly exceed the target value, stop this resonance charging. In the preferred embodiment, switches Q1 and de-qing switches are used to provide an adjustment accuracy better than ± 0.0%. If additional adjustment is required, a third control with voltage adjustment can be used. This is a step-down circuit for switch Q3 and resistor R3 (shown as 216 in Figure 5B) to reduce the CO discharge to an accurate target value. CO Downstream Improvements As shown above, the MO and PA pulse power systems of the present invention each use the same basic design as used in conventional technology systems (Figure 5A). However, some major improvements in the basic design are required for this paper. The size of the paper applies the Chinese National Standard A4 (21 × 297 mm) 21 (Please read the precautions on the back before filling this page) Order —

564585 A7 ____B7_ 五、發明説明(19 ) 由於大幅增加的重覆速率所造成大約因數為了之熱負載之 增加。這此改良在以下討論。 轉換器與壓縮頭之詳細說明 在此節中說明轉換器與壓縮頭之製造細節。 固態開關 固開關46是由p〇werex公司所提供之p/N CM 800 HA-34H IGBT開關,其辦公室是在Y〇ungW〇〇d, Pennsylvania ’在較佳實施例中兩個此種開關並聯使用。 電感器 電感裔48、54與64是類似於習知技術系統中所使用之 飽和電感器’如同在美國專利案號5,448,580與5,315,611中 所說明。第6圖顯示L〇電感器48之較佳設計。在此電感器 中從兩個IGBT開關46B來的四個導線經由通過16個鐵圓環 49而形成部件48A是8英吋長非常高的導磁率材料所構成 之中空圓柱體具有大約1英吋之内直徑與大約1·5英吋之外 直徑。各此四導線在絕緣甜甜圈形狀之核心周圍繞兩圈以 形成部件48Β。然後將此四導線連接至板,其被連接至C1 電容器庫52之高壓侧。 第8圖中顯示此飽和電感器54之較佳圖式。於此情形 中,此電感器是單圈之幾何結構,而此組裝之頂部與底部 蓋541與542以及中央心軸543均在高電壓而經由電感器磁 核心形成單繞線線圈。外部殼體545是在接地電位。此磁核 心是0.0005英忖厚帶纏繞50-50%鎳一鐵合金而由 Magnetics of Butler,Pennsylvania或是National Arnold of 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -22 - (請先閲讀背面之注意事項再填寫本頁)564585 A7 ____B7_ V. Description of the invention (19) Due to the greatly increased repeat rate, the approximate factor is to increase the thermal load. This improvement is discussed below. Detailed description of the converter and compression head In this section, the manufacturing details of the converter and compression head are explained. The solid-state switch 46 is a p / N CM 800 HA-34H IGBT switch provided by powerex. Its office is in Young Wood, Pennsylvania. In the preferred embodiment, two such switches are connected in parallel. use. Inductors The inductors 48, 54 and 64 are similar to saturated inductors used in conventional technology systems' as described in U.S. Patent Nos. 5,448,580 and 5,315,611. FIG. 6 shows a preferred design of the L0 inductor 48. In this inductor, four wires from two IGBT switches 46B are formed through 16 iron rings 49 to form a part 48A. The hollow cylinder is 8 inches long and has a very high permeability material. Inside diameter and outside diameter of about 1.5 inches. Each of these four wires is wound twice around the core of the insulating donut shape to form part 48B. This four wire is then connected to the board, which is connected to the high voltage side of the C1 capacitor bank 52. A preferred diagram of the saturation inductor 54 is shown in FIG. 8. In this case, the inductor is a single-turn geometry, and the top and bottom covers 541 and 542 and the central mandrel 543 of this assembly are all at a high voltage to form a single-wound coil through the inductor's magnetic core. The outer case 545 is at a ground potential. This magnetic core is 0.0005-inch thick tape wound with 50-50% nickel-iron alloy and used by Magnetics of Butler, Pennsylvania or National Arnold of. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -22-( (Please read the notes on the back before filling out this page)

564585 A7 B7 五、發明説明(2〇 )564585 A7 B7 V. Description of the invention (20)

Adelanto, California所提供。在電感器殼體上之散熱片546 方便將内部散佈之熱轉送以達成強制性之空氣冷卻。此 外,陶瓷盤(未圖式)是安裝於反應器底蓋之下協助將熱由 此組裝之中央部位轉送至模組底盤底板。第8圖亦顯示高壓 連接至C1電容器庫52之電容器之一、以及連接至1:25升壓 脈衝變壓器56之感應單元之一上之高壓導線,此殼體545 是連接至單元56之地線。 在第9A與9B圖中各顯示飽和電感器64之頂視圖與截 面圖。在本實施例之電感器中,如於第9B圖中所示添加之 通量排除金屬件301、302、303、以及304以便降低在電感 器中之洩漏通量。此等通量排除件實質上降低了磁通量可 滲透之區域,且因此協助將電感器之飽和電感器最小化。 電流經由在電感器組裝中之垂直導體桿而圍繞磁核心307 五圈。此在305進入之電流向下流經在第9A圖中所示之在 中央標示為“1”之大直徑導體並向上流經在周圍亦標示為 “1”之六個較小之導體。然後此電流向下流經在其内部標示 為2兩導體,然後向上流經在外面標示為2之六個導體,然 後向下流經在裡面之通量排除金屬,然後向上流經外面標 示為3之六個導體,然後向下流經在裡面之兩個標示為3之 導體,然後向上流通在外面標示為4的六個導體,然後向下 流經在裡面標示為4的導體。此通量排除金屬元件是跨越導 體保持在全脈衝電壓之一半而允許在通量排除金屬部份與 其他繞線之金屬桿之間減少其安全分離間隔。此磁核心307 是由纏繞0。0005英吋厚之80-20%鎳一鐵合金帶而形成之三 23 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 _B7_ 五、發明説明(21 ) (請先閲讀背面之注意事項再填寫本頁) 個線圈307A、B與C所構成,此帶是由Magnetics,Inc· of Butler,Pennsylvania 或 National Arnold of Adelanto, California所提供。讀者應注意奈米-結晶材料例如 VITROPERMTM是由 VACUUM SCHITELZE GmbH德國可獲 得、以及FINEMETTM&HitachiMetals日本可獲得,均可使 用於電感器54與64。在習知技術之脈衝功率系統中,潤滑 油從電子元件中洩漏是潛在的問題。在此較佳實施例中, 潤滑油隔離元件是限制於飽和電感器。此外,如第9B圖中 所示之飽和電感器64是設置於锅形包含潤滑油之殼體中, 其中所有封閉之連接是位於潤滑油之位準上,以實質上消 除漏油之可能性。例如電感器64之最低封閉是顯示於第8B 圖之308。因為正常之潤滑油位準是在殼體306之頂蓋之 下,只要此殼體保持在直立的情況中,潤滑油漏油至組裝 之外幾乎是不可能的。 電容器 於第5圖中所示之電容器庫42、52、62與82(即,C。、 C!、<:1>_1與(^)均由並聯之現有電容器之庫所構成。電容器 42與52是薄膜式電容器而由供應商可獲得:例如是Vishay Roederstein(其辦公室在 Statesville,North Carolina)或 Wima,Germany。本案申請人所偏好之連接電容器與電感 器之方法是將它焊接至具有塗佈厚鎳之銅線之特殊印刷電 路板上正與負的端子,其方式類似於在美國專利案 5,448,580中所說明者。電容器庫62與64典型地是由高壓陶 瓷電容器之並聯陣列所構成,而由日本之供應商Murata或 本紙張尺度適用中國國家標準(CNS) A4规格(210X297公釐) -24 - 564585 A7 B7 五、發明説明(22 ) TDK供應。在使用於ArF雷射之較佳實施例中,電容器庫 82(即,Cp)是由33個0.3nF電容器之庫所構成,其總電容為 9.9nF ; Cp-丨是由24個0.40nF之電容器之庫所構成,其總電 容為9.6nF ; (^是5.7//?電容器庫以及C。是5.3/zF之電容器 庫。 脈衝變壓器 脈衝變壓器亦類似於在美國專利案號5,448,580與 5,3 13,481中說明者。然而,本實施例之脈衝變壓器在次級 繞組中只有單圈數並且24感應單元等於單初級圈數之1/24 用於相等之1:24升壓比。在第10圖中顯示脈衝變壓器56之 圖式。此各24個感應單元包括鋁製間距短管56A其有兩突 緣(各具有平坦之邊緣其有車有螺紋之螺栓孔),它被以螺 栓固定於在印刷電路板56B上之正與負之端子(此負的端子 是24初級繞組之高壓端子)。隔離器56C將各間距短管之正 端子與相鄰間距短管之負端子分離。在間距短管之突緣之 間是1 1/16英吋長之中室圓柱體,其具有0.875外直徑而壁 厚大約1/32英吋。此間距短管以一英吋寬0.7mil(千分之一 英吋)厚的Metglas™ 2605 S3A以及O.lmil厚的聚酯薄膜包 裹纏繞,一直到此絕緣1^^(8135^包裝之外直徑為2.24英吋 為止。第10A圖中顯示由單一經包裹之間距短管所形成之 初級繞組之透視圖。 變壓器之次級繞組是單一 0D不銹鋼桿安裝於牢固安 裝之PTFE(Teflon)隔離管内。如第10圖中所示此繞組有四 個部份。此於第10圖中56D所示之不銹鋼第二繞組之低壓 25 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(23 終端是連接至在印刷電路板56B上56E處之主高壓線,此高 壓端子是顯示在56F。因此,此變壓器採用自動變壓器結 構,而且升壓比成為1:25而非1:24。因而,在感應單元之 十與一端子之間之大約-1400v脈衝將於次級繞組側之端子 56F產生大約-35,000伏之脈衝。此單圈數第二繞組設計提 供非常低之洩漏電感而允許非常快的輸出上升時間。 雷射室電性元件之細節Courtesy of Adelanto, California. The heat sink 546 on the inductor case facilitates the transfer of the internally distributed heat to achieve mandatory air cooling. In addition, a ceramic plate (not shown) is installed under the bottom cover of the reactor to help transfer heat from the central part of the assembly to the bottom plate of the module. Figure 8 also shows the high-voltage wire connected to one of the capacitors connected to the C1 capacitor bank 52 and to one of the sensing units of the 1:25 boost pulse transformer 56. This case 545 is the ground wire to the unit 56 . A top view and a cross-sectional view of the saturation inductor 64 are shown in Figs. 9A and 9B, respectively. In the inductor of this embodiment, the flux exclusion metal pieces 301, 302, 303, and 304 are added as shown in FIG. 9B in order to reduce the leakage flux in the inductor. These flux exclusions substantially reduce the area where the magnetic flux is permeable and therefore help minimize the inductor's saturation inductor. The current passes around the magnetic core 307 five times via a vertical conductor rod in the inductor assembly. This current entering at 305 flows down through the large-diameter conductor marked "1" in the center shown in Figure 9A and up through the six smaller conductors also marked "1" around it. This current then flows down through the two conductors labeled 2 inside, then flows up through the six conductors labeled 2 outside, and then flows down through the flux that excludes the metal, and then flows upwards through the outside labeled 3 Six conductors then flow down through the two conductors marked 3 inside, then flow up through the six conductors marked 4 outside, and then down through the conductor marked 4 inside. This flux exclusion metal element is maintained across the conductor at half the full pulse voltage, allowing the safety separation gap between the flux exclusion metal portion and other wound metal rods to be reduced. This magnetic core 307 is formed by winding a 0.005-inch-thick 80-20% nickel-iron alloy strip. 23 (Please read the precautions on the back before filling this page.) The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 _B7_ V. Description of the invention (21) (Please read the precautions on the back before filling out this page) Coils 307A, B and C, this band is made of Magnetics, Inc. of Butler , Available from Pennsylvania or National Arnold of Adelanto, California. The reader should note that nano-crystalline materials such as VITROPERMTM are available from VACUUM SCHITELZE GmbH Germany and FINEMETTM & Hitachi Metals Japan, both of which can be used for inductors 54 and 64. In conventional pulsed power systems, leakage of lubricant from electronic components is a potential problem. In this preferred embodiment, the lubricant isolation element is limited to a saturated inductor. In addition, as shown in FIG. 9B, the saturated inductor 64 is provided in a pot-shaped housing containing lubricating oil, and all closed connections are located at the level of the lubricating oil to substantially eliminate the possibility of oil leakage. . For example, the lowest confinement of inductor 64 is shown in Fig. 8B, 308. Because the normal lubricating oil level is under the top cover of the housing 306, it is almost impossible for the oil to leak out of the assembly as long as the housing is kept upright. The capacitor banks 42, 52, 62, and 82 shown in FIG. 5 (i.e., C., C !, <: 1 > _1 and (^) are all formed by a bank of existing capacitors connected in parallel. Capacitor 42 And 52 are film capacitors and are available from suppliers: for example, Vishay Roederstein (its office is in Statesville, North Carolina) or Wima, Germany. The preferred method for connecting capacitors and inductors is to solder them to The positive and negative terminals on a special printed circuit board coated with thick nickel copper wires are similar to those described in U.S. Patent No. 5,448,580. Capacitor banks 62 and 64 are typically composed of a parallel array of high voltage ceramic capacitors And the Japanese supplier Murata or this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -24-564585 A7 B7 V. Description of the invention (22) TDK supply. Compared with the use of ArF laser In the preferred embodiment, the capacitor bank 82 (ie, Cp) is composed of 33 banks of 0.3nF capacitors, and its total capacitance is 9.9nF; Cp- 丨 is composed of 24 banks of 0.40nF capacitors, and its total The capacitance is 9.6nF; (^ is 5. 7 //? Capacitor bank and C. Capacitor bank of 5.3 / zF. Pulse transformer Pulse transformer is also similar to that described in US Patent Nos. 5,448,580 and 5,3 13,481. However, the pulse transformer of this embodiment is in the secondary There are only one number of turns in the winding and 24 induction units are equal to 1/24 of the number of single primary turns for an equal 1:24 boost ratio. The diagram of the pulse transformer 56 is shown in Figure 10. Each of the 24 induction units includes The short-pitch aluminum tube 56A has two flanges (each has a flat edge and has threaded bolt holes), and it is bolted to the positive and negative terminals on the printed circuit board 56B (this negative terminal It is the high-voltage terminal of the 24 primary winding.) The isolator 56C separates the positive terminal of each short tube from the negative terminal of the adjacent short tube. It is 1 1/16 inch long between the flanges of the short tube. A chamber cylinder with an outer diameter of 0.875 and a wall thickness of about 1/32 inch. This short pitch tube is one inch wide by 0.7mil (one thousandth of an inch) thick Metglas ™ 2605 S3A and O.lmil thick Polyester film wrapped and wound up to this insulation 1 ^^ (8135 ^ outside the package diameter Up to 2.24 inches. Figure 10A shows a perspective view of the primary winding formed by a single wrapped short tube. The secondary winding of the transformer is a single 0D stainless steel rod installed in a firmly installed PTFE (Teflon) insulation tube. The winding shown in Figure 10 has four parts. This is the low voltage 25 of the stainless steel second winding shown at 56D in Figure 10. (Please read the precautions on the back before filling this page) This paper size applies to China Standard (CNS) A4 specification (210X297 mm) 564585 A7 B7 V. Description of the invention (23 The terminal is the main high-voltage line connected to 56E on the printed circuit board 56B. This high-voltage terminal is shown at 56F. Therefore, this transformer adopts an automatic transformer structure, and the boost ratio becomes 1:25 instead of 1:24. Therefore, a pulse of about -1400v between the ten and one terminals of the induction unit will generate a pulse of about -35,000 volts at the terminal 56F on the secondary winding side. This single-turn second winding design provides very low leakage inductance while allowing very fast output rise times. Details of the electrical components of the laser chamber

Cp電容斋82包括安裝於室壓力容器頂上之個〇3 nF 電容器之庫,C典型地ArF雷射是在雷射氣體中操作,其中 3.5%氬、0.1%氟、以及其餘為氖構成)。此等電極是大約28 英吋長而間隔大約0.5至1_〇英吋較佳是大約5/8英忖。以下 討論較佳電極。在此實施例中,頂部電極是稱為陰極且底 部電極稱為陽極而如於第5圖中所示接地。 放電時間 在ArF、KrF與F2放電雷射中,此放電只持續大約5〇奈 秒(即,50xl0_9秒)。此放電造成用於持續動作所須整體反 轉,但此反轉只存在於放電期間。因此,當在雷射氣體中 整體被反轉以致可以產生種子光線之放大時。對於注入種 子式ArF、KrF或F2雷射之重要須求是確保來自主振盪器之 種子光線在大約50奈秒的期間通過功率放大器之放電區, 此放電準確時間控制之重要障礙是在開關42(如第5圖中所 示)被觸設而關閉與放電(其只持續大約40-50奈秒)開始之 間有大約5微秒之時間延遲。此脈衝使用大約5微秒的時間 流經在C〇與電極之間之電路。此間隔時間隨著充電電壓之 26 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 ___B7_ 五、發明説明(24 ) 大小與電路中電感器之溫度而實質上改變。 然而在此所說明之本發明之較佳實施例中,本案申請 人已發展出電性脈衝功率電路,其提供兩個放電室之放電 時間控制至小於大約2奈秒(即,2xl〇·9秒)之相對準確度。 在第4圖中顯示此兩電路之方塊圖。 本案發明人當進行測試其顯示計時控制隨著充電電壓 以大約5-10奈秒/伏特而變化。這對於高壓電源對於充電電 容器之充電之準確度與重複性設置嚴袼之要求。例如,如 果期望5奈秒之計時控制,其具有每伏特1〇奈秒之移動敏感 度’則其判疋準確度將是0.5伏特。對於額定充電電壓1 〇〇〇 伏特而言,這將須要0.05%之充電準確度,這是非常難以 達成尤其疋當此等電容器必須每秒鐘4〇〇〇次被充電至此特 殊值。 本案申請人對此問題所偏好之解決方案是如於第丨與4 圖所示且如上述,由單一共振充電器7對馗〇與?八之並聯充 電電容器充電。因此是重要以設計用於兩個系統之兩個脈 衝壓縮/放大電路,以致於其時間延遲對充電電壓之曲線與 在第4A圖所示者相匹配,可藉在各電路中儘可能使用相 同的元件而最容易地達成。 因此,為了將較佳實施例中的時間變化(此變化稱為波 動)最小化,本案申請人以類似的元件設計了用於兩個放電 室之雜功率元件,並且証實此時間延遲對(vs)電壓之曲 線事實上彼此相隨如在第4A圖中所示者。本案申請人註實 在充電電壓之正常作業範圍中,隨著電堡會有實質上時& 本紙張尺度適用中國國家標準(Ο®) A4規格(210X297公爱) (請先閲讀背面之注意事項再填寫本頁)The Cp capacitor 82 includes a library of 0 3 nF capacitors mounted on the top of the chamber pressure vessel. C is typically an ArF laser operated in a laser gas, of which 3.5% argon, 0.1% fluorine, and the rest are composed of neon). These electrodes are about 28 inches long with a spacing of about 0.5 to 1-0 inches, preferably about 5/8 inches. The preferred electrodes are discussed below. In this embodiment, the top electrode is referred to as the cathode and the bottom electrode is referred to as the anode and is grounded as shown in FIG. Discharge time In ArF, KrF, and F2 discharge lasers, this discharge lasts only about 50 nanoseconds (ie, 50x10-9 seconds). This discharge causes an overall reversal for continuous operation, but this reversal only exists during the discharge. Therefore, when the whole is inverted in the laser gas so that the amplification of the seed light can be generated. An important requirement for injecting seeded ArF, KrF or F2 lasers is to ensure that the seed light from the main oscillator passes through the discharge zone of the power amplifier within approximately 50 nanoseconds. An important obstacle to accurate time control of this discharge is the switch 42 (As shown in Figure 5) there is a time delay of about 5 microseconds between being triggered and turning off and the beginning of discharge (which only lasts about 40-50 nanoseconds). This pulse uses approximately 5 microseconds to flow through the circuit between Co and the electrode. This interval time is 26% of the charging voltage (please read the precautions on the back before filling this page) The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 ___B7_ V. Description of the invention (24) Size The temperature of the inductor in the AND circuit substantially changes. However, in the preferred embodiment of the invention described herein, the applicant of this case has developed an electrical pulsed power circuit that provides the discharge time control of two discharge cells to less than about 2 nanoseconds (ie, 2 × 10 · 9 Seconds) relative accuracy. A block diagram of these two circuits is shown in Figure 4. When the inventors of the present case conducted tests, they showed that the timing control changed with the charging voltage at about 5-10 nanoseconds / volt. This is a strict requirement for the accuracy and repeatability of the high-voltage power supply for charging the rechargeable capacitor. For example, if a timing control of 5 nanoseconds is desired and it has a movement sensitivity of 10 nanoseconds per volt ', its discrimination accuracy will be 0.5 volts. For a rated charging voltage of 1,000 volts, this will require a charging accuracy of 0.05%, which is very difficult to achieve, especially when these capacitors must be charged to this special value 4,000 times per second. The applicant's preferred solution to this problem is as shown in Figures 丨 and 4 and as described above, a single resonant charger 7 pairs 馗 〇 and? The eighth parallel charging capacitor is charged. It is therefore important to design two pulse compression / amplification circuits for the two systems so that the time delay versus charge voltage curve matches the one shown in Figure 4A. The same can be used in each circuit as much as possible The easiest to achieve. Therefore, in order to minimize the time variation (referred to as fluctuation) in the preferred embodiment, the applicant of the present application designed a hybrid power element for two discharge cells with similar elements, and confirmed that this time delay is proportional to (vs The curves of the voltages actually follow each other as shown in Figure 4A. The applicant in this case noted that in the normal operating range of the charging voltage, as the electric castle will be substantially & this paper size applies the Chinese national standard (Ο®) A4 specification (210X297 public love) (Please read the precautions on the back first (Fill in this page again)

27 564585 A7 ___B7 五、發明説明(25 ) 延遲的改變,但此時間延遲隨電壓之改變對於此兩電路是 相同的。因此,對於此兩個並聯充電之充電電容器而古, 充電電壓可以在大的操作範圍中變化而沒有改變放電之相 對時間。 在脈衝功率電路中電性元件之溫度控制亦是重要的, 因為温度變化可以影響脈衝壓縮時間(尤其是在飽和電感 器中之溫度變化)。因此,其設計目的氣將溫度的變化最小 化且第二種方法是監視溫度敏感元件之溫度並使用四饋控 制以調整觸發時間以低償。亦可以處理器提供控制,其被 私式化而具有學習算法,其根據關於過去時間變化(具有已 知操作歷史)之歷史資料作調整。然後此歷史資料根據雷射 系統目前之操作被應用以預測時間之變化。 觸發之控制 此各兩室之放電觸發是使用用於各電路之觸發電路 (如同於美國專利案號6,〇16,325中所說明者)而各別地達 成。此等電路加上時間延遲以修正脈衝功率之電性元件中 之充電電壓與溫度改變所引起之計時變化,以致於將在觸 發與放電之間之時間(延遲)保持可行地恒定。如同以上所 示,由於此兩個電路在基本上相同,此在修正後的變化是 幾乎相同(即,彼此在大約2奈秒之中)。 如於第6C、D與E圖中所示,此較佳實施例中之表現將 大大地增強,如果此功率放大器中之放電是在主振盪器中 放電後大約40至50奈秒發生。這是因為要耗用數個奈秒讓 雷射脈衝在主振盪器中發展以及耗用另外數個奈秒使雷射 - 1" - _ 本紙張尺度適财關緖準(CNS) A4規格(210X297公爱) 「% ·-—27 564585 A7 ___B7 V. Description of the invention (25) The change of the delay, but this time delay with the change of voltage is the same for the two circuits. Therefore, for these two charging capacitors charged in parallel, the charging voltage can be changed in a large operating range without changing the relative time of discharge. The temperature control of electrical components in pulsed power circuits is also important because temperature changes can affect pulse compression time (especially temperature changes in saturated inductors). Therefore, its design purpose is to minimize the temperature change and the second method is to monitor the temperature of the temperature sensitive element and use the four-feed control to adjust the trigger time to reduce the compensation. It can also provide control by a processor, which is privatized with a learning algorithm that adjusts based on historical data about past time changes (with known operating history). This historical data is then applied to predict changes in time based on the current operation of the laser system. Control of Triggering The discharge triggering of each of the two chambers is accomplished individually using trigger circuits for each circuit (as described in U.S. Patent No. 6,016,325). These circuits add a time delay to correct the timing change caused by the change in the charging voltage and temperature in the electrical component of the pulse power, so that the time (delay) between triggering and discharging is kept practically constant. As shown above, since the two circuits are substantially the same, the changes after this correction are almost the same (i.e., within about 2 nanoseconds of each other). As shown in Figures 6C, D and E, the performance in this preferred embodiment will be greatly enhanced if the discharge in the power amplifier occurs in the main oscillator approximately 40 to 50 nanoseconds after discharge. This is because it takes several nanoseconds for the laser pulse to develop in the main oscillator and another several nanoseconds for the laser-1 "-_ The paper size is suitable for financial standards (CNS) A4 specifications ( 210X297 public love) "% ·--

、?τ— (請先閲讀背面之注意事項再填寫本頁) 564585 A7 B7 五、發明説明(26 ) 光線之前部由振盪器到達放大器,並且因為來自主振盪器 之雷射脈衝之後端之頻帶寬度較其前部之頻帶寬度窄很 多。為此原因而提供各別之觸發信號以觸發用於各室之開 關46。此被選擇以達成所期望光線品質之實際延遲,是根 據如於第6C、D與E圖中所示之實際表現曲線。讀者須注 意,例如可以獲得較窄的頻帶寬度與較長之脈衝,其代價 是藉由增加在M0觸發與PA觸發之間延遲之脈衝能量。 其他控制放電時間之技術 由於如同於第6C、D與E圖中所示中所示,放電之相對 時間對於光線的品質可以有重要的影響,是合理要有其他 的步驟以控制放電時間。例如、雷射作業之某些模式會造 成充電電壓很大的變化或電感器溫度很大的變化。這些很 大的變化會使得放電時間控制複雜。 監視時間 放電時間可以以脈衝一至一脈衝的基確監聽,並且時 間之差異可以被使用於回饋控制系統以調整此關閉開關42 之觸發信號之時間。此PA放電較佳是使用光電池以觀察放 電螢光(稱為ASE)的方式監視而不是使用雷射脈衝,因為 如果在PA中沒有產生雷射光線,則會造成非常不良之計 時。對於MO可以使用ASE或種子雷射脈衝。 偏壓調整 如同於第5圖中所示,脈衝時間可以藉由調整流經電感 器LB1、1^2與1^3(其提供用於電感器48、54與64之偏壓)之 偏壓電流而增加或減少,可以使用其他的技術以增加所須 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -29 - (請先閲讀背面之注意事項再填寫本頁)、? Τ— (Please read the notes on the back before filling this page) 564585 A7 B7 V. Description of the invention (26) The front part of the light reaches the amplifier from the oscillator, and because of the frequency band behind the laser pulse from the main oscillator The width is much narrower than the width of the front band. For this reason, a separate trigger signal is provided to trigger the switch 46 for each room. This actual delay selected to achieve the desired light quality is based on the actual performance curves as shown in Figures 6C, D and E. The reader should note that, for example, narrower bandwidths and longer pulses can be obtained at the cost of increasing the pulse energy delay between the M0 trigger and the PA trigger. Other techniques for controlling the discharge time As shown in Figures 6C, D, and E, the relative time of discharge can have a significant effect on the quality of light. It is reasonable to have other steps to control the discharge time. For example, some modes of laser operation can cause large changes in charging voltage or large changes in inductor temperature. These large changes can complicate discharge time control. Monitoring time The discharge time can be monitored with pulse-to-pulse basis, and the time difference can be used in the feedback control system to adjust the time of the trigger signal of the switch 42. This PA discharge is preferably monitored using a photovoltaic cell to observe the discharge fluorescent light (called ASE) rather than using laser pulses, because if laser light is not generated in the PA, it will cause a very bad time. For MO you can use ASE or seed laser pulses. The bias adjustment is as shown in Figure 5. The pulse time can be adjusted by adjusting the bias current flowing through the inductors LB1, 1 ^ 2, and 1 ^ 3 (which provides the bias for inductors 48, 54 and 64) The current can be increased or decreased. Other technologies can be used to increase the required paper size. This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -29-(Please read the precautions on the back before filling this page)

五、發明説明(27 ) 的1 乂將此等電感器飽和。例如’電感器之核心材料可 以以機械方式㈣而是有非常快速反應之ρζτ元件,其可 以根據來自脈衝計時監視器之回饋信號而回饋控制。 可調整之寄生負載 可為正之寄生負載可以被加至⑶下游之脈衝功率電 路之一或兩者。 其他的回饋控制 除了脈衝時間監視信號之外,充電電壓與電感器溫度 仏號可以破使料回饋控制,以除了調整以上說明的觸發 時間之外’還可調整以上說明之偏壓或核心機械分離。X 突發式(burst type)作業 當雷射是在連續基礎上作業時,時間的回饋控制是相 當的谷易且有效。然而,在正常的情況下微影術雷射是例 如以下以突發模式操作以處理在各許多晶圓上之2〇個區 域: 關機(停止發出雷射)一分鐘將晶圓置入定位 以4000Hz之重覆率照射區域1 〇 2秒 關機〇·3秒以移至區域2 以4000Hz之重覆率照射區域2 0.2秒 關機0.3秒以移至區域3 以4000Hz之重覆率照射區域3 0.2秒 以4000Hz之重覆率照射區域199 0.2秒 關機0.3秒以移至區域200 30 本紙張尺度適用中國國家標準(⑽)A4規格(210X297公爱) 564585 A7 B7 五、發明説明(28 ) 以4000Hz之重覆率照射區域200 0.2秒 關機1分鐘以更換晶圓 在下一個晶圓上以4000Hz之重覆率照射區域1 0.2 秒。 此過程可以被重覆許多小時,但將經常會被中斷越過1 分鐘的期間。 此關機時間(down time)的長度會影響MO與PA之脈衝 功率系統之間的相對時間,且在觸發控制中可能須要調整 以確保:當來自MO之種子光線是在期望的位置時在PA產 生放電。藉由監視來自各室之放電與光線射出的時間,此 雷射操作者可以調整觸發時間(準確至大約2奈秒之内)以 達成最佳表現。 雷射控制處理器較佳被程式化以監視時間與光線品質 並自動調整時間用於最佳之表現。在本發明之較佳實施例 中使用計時算法其發展儲存值組而可應用於各種不同之操 作模式組。此等在較佳實施例中之算法被設計在連續作業 期間切換至回饋控制,此用於目前脈衝之計時值是根據對 於一或多個先前脈衝(例如在前一個脈衝)所收集的回饋資 料而設定。 無輸出放電 以上所討論之計時算法對於連續或規律性重覆操作運 作良好。然而,此計時之準確性在不尋常的情況中可能不 良,例如在雷射關機例如5分鐘之不尋常期間後之第一脈 衝。在某些情況中此用於突發之第一或第二脈衝之不準確 31 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(29 ) 計時也許不會造成問題。一項較佳之技術是將此雷射預先 設式化設計以致於MO與PA之放電對於一或兩個脈衝而言 故意地不依順序,以致於將來自M0之種子光線放大為不 可能。例如,雷射可以被程式設計而在將M0觸發放電之 前將PA觸發放電80奈秒。在此情況中從雷射將無重大的輸 出,但雷射之量測感測器可以確定計時參數以致於用於第 一輸出脈衝之時間參數是準確的。替代式的,MO之觸發 相對於PA之觸發可以足夠的早,以致於在PA放電之前MO 之光線通過PA,第4D、4D1、4E與4E1為流程圖其顯示使 用此等技術之可能控制方法。 元件之水冷卻 為了容納更大的熱負載,除了由在雷射箱内冷風扇所 提供正常之強制式空氣冷卻之外,還設置了脈衝功率元件 之水冷卻,以便支持4KHz或更大之脈衝操作率。 水冷卻之缺點為其傳統上具有在靠近電性元件或高壓 佈線處會有漏水之可能性。本案特殊的實施例藉由使用單 一牢固之冷卻管而實質上避免此潛在的問題,此管經由此 模組中以冷卻此等元件其在正常情況下散發儲存在模組中 大部份的熱。因為在模組殼體中並不存在接頭或連接,且 知冷卻管是固體金屬(例如銅,不銹鋼等)之連續件,此大 大地減少了在模組中漏水發生之機會。模組至冷卻水之連 接因此是在此組裝金屬片殼體之外實施,在該處冷卻水管 與快去除連接式連接器配對連接。 飽和電感器 32 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 _________B7 五、發明説明(3〇 ) 在轉換器模組的情形中例如第u圖中所示設有水冷式 飽和電感II54A,其類似於在第8圖中所示之電感器54,所 不同的是電感器54之散熱片被在㈣圖中所示水冷卻套管 54A1取代。冷卻管線54A2是經由模組中而纏繞在套管 54A1周圍且經由鋁底板,在此板安裝有1(^丁開關與串聯三 極體。此三個元件構成在模組中功率消耗之大部份。其他 亦散熱之元件(緩衝二極體與電阻器、電容器等)是由在模 組後面之兩風扇所提供之強制式空氣而冷卻。 由於套官54A1是保持在接地電位,在將冷卻管直接附 加於反應器殼體時沒有電壓隔離的問題。此藉由將冷卻管 按壓安裝於鴿尾槽中而達成,此槽如所示在54八3於殼體外 部切割而成,且使用導熱混合物以協助冷卻管與殼體之間 產生良好之熱接觸。 冷卻高壓元件 雖然IGBT開關在高壓“浮動,,,它們是安裝在鋁的底部 上,而藉由1/16英吋厚的鋁板而與開關電性隔離。此鋁底 板作甲為散熱器且在接地電位操作且相當容易冷卻,因為 在冷卻電路中不須要高壓隔離。 第7圖顯示水冷式鋁底板之圖形。在此情況中,冷卻配 管被壓入鋁底部的槽中,而IGBT是安裝於鋁底部上。如同 電感器54a ’使用導熱混合物以改善配管與底板之間整體的 接合。 此等串聯二極體在正當操作期間亦在高壓“浮動,,。在 此情況中,典型地使用於此設計中之二極體殼體並未提供 本紙張尺度適用中國國家標準(CNS) A4規格(21〇><297公爱)V. Description of the invention (1) (27) Saturates these inductors. For example, the core material of an 'inductor' can be mechanically ㈣ instead a ρζτ element with a very fast response, which can be feedback-controlled based on a feedback signal from a pulse timing monitor. Adjustable parasitic load A positive parasitic load can be added to one or both of the pulsed power circuits downstream of the CD. Other feedback control In addition to the pulse time monitoring signal, the charging voltage and inductor temperature 仏 can break the feedback control, in addition to adjusting the trigger time described above, you can also adjust the bias or core mechanical separation described above . X burst type operation When the laser is operated on a continuous basis, the feedback control of time is quite easy and effective. However, under normal circumstances lithography lasers are, for example, the following operating in burst mode to process 20 areas on each of many wafers: Shut down (stop emitting lasers) for one minute and place the wafer into position to 4000 Hz repeat rate irradiates the area 1 〇2 seconds shut down 0.3 seconds to move to area 2 0.2 seconds to illuminate the area 2 0.2 seconds turn off 0.3 seconds to move to area 3 irradiates the area 3 with 4000 Hz repeat ratio Illuminate the area at a repetition rate of 4000 Hz in seconds, 0.2 seconds, shut down in 0.3 seconds, and move to the area in 200. 30 This paper size applies the Chinese national standard (⑽) A4 specification (210X297 public love) 564585 A7 B7 V. Description of the invention (28) at 4000Hz The repetition rate irradiation area 200 was turned off for 0.2 minutes in 0.2 seconds to replace the wafer. On the next wafer, the area was irradiated at the repetition rate of 4000 Hz for 1 0.2 seconds. This process can be repeated for many hours, but will often be interrupted over a period of 1 minute. The length of this down time will affect the relative time between the pulse power system of the MO and the PA, and may need to be adjusted in the trigger control to ensure that: when the seed light from the MO is at the desired position, it is generated in the PA Discharge. By monitoring the discharge and time of light emission from each chamber, the laser operator can adjust the trigger time (accurate to within about 2 nanoseconds) to achieve the best performance. The laser control processor is preferably programmed to monitor time and light quality and automatically adjust the time for optimal performance. In the preferred embodiment of the present invention, a timing algorithm is used to develop stored value groups that can be applied to various different operation mode groups. These algorithms in the preferred embodiment are designed to switch to feedback control during continuous operation. The timing value for the current pulse is based on the feedback data collected for one or more previous pulses (such as the previous pulse). While setting. No Output Discharge The timing algorithms discussed above work well for continuous or regular repeated operations. However, the accuracy of this timing may be poor in unusual situations, such as the first pulse after an unusual period of laser shutdown, such as 5 minutes. In some cases this is used for the inaccuracy of the first or second pulse 31 (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) ) 564585 A7 B7 5. Description of the invention (29) Timing may not cause problems. A better technique is to pre-design the laser so that the discharge of MO and PA is intentionally out of order for one or two pulses, so that it is impossible to amplify the seed light from M0. For example, a laser can be programmed to discharge PA trigger for 80 nanoseconds before triggering M0. In this case there will be no significant output from the laser, but the laser measurement sensor can determine the timing parameters so that the time parameters used for the first output pulse are accurate. Alternatively, the triggering of the MO may be earlier than that of the PA, so that the light of the MO passes through the PA before the PA is discharged. The 4D, 4D1, 4E, and 4E1 are flowcharts showing possible control methods using these technologies. . In order to accommodate the larger thermal load, in addition to the normal forced air cooling provided by the cooling fan in the laser box, the water cooling of the pulse power element is also provided to support 4KHz or larger pulses. Operating rate. The disadvantage of water cooling is that it traditionally has the potential to leak water near electrical components or high-voltage wiring. The particular embodiment of this case substantially avoids this potential problem by using a single sturdy cooling tube that passes through the module to cool these components, which normally dissipates most of the heat stored in the module . Because there are no joints or connections in the module case, and the cooling pipe is a continuous piece of solid metal (such as copper, stainless steel, etc.), this greatly reduces the chance of water leakage in the module. The connection of the module to the cooling water is therefore implemented outside this assembled sheet metal housing, where the cooling water pipe is mated with the quick-release connector. Saturated inductor 32 (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 564585 A7 _________B7 V. Description of the invention (3〇) In the converter module In the case, for example, the water-cooled saturated inductor II54A is provided in the u figure, which is similar to the inductor 54 shown in FIG. 8 except that the heat sink of the inductor 54 is shown in the figure. Water cooling jacket 54A1 replaced. The cooling line 54A2 is wound around the sleeve 54A1 through the module and through the aluminum base plate. A 1 × ^ switch and a series triode are installed on this board. These three components constitute most of the power consumption in the module. Other components that also dissipate heat (buffering diodes, resistors, capacitors, etc.) are cooled by forced air provided by two fans behind the module. Because the sleeve 54A1 is kept at ground potential, it will cool down There is no problem of voltage isolation when the tube is directly attached to the reactor casing. This is achieved by pressing the cooling tube into the dovetail slot, which is cut out of the casing as shown in 54-8 and used The heat-conducting mixture helps to create a good thermal contact between the cooling tube and the housing. Although the IGBT switches are "floating" at high voltages, they are mounted on the bottom of the aluminum, and with a 1 / 16-inch thick aluminum plate It is electrically isolated from the switch. This aluminum base plate is used as a radiator and operates at ground potential and is easy to cool, because high voltage isolation is not required in the cooling circuit. Figure 7 shows the figure of the water-cooled aluminum base plate. In this case, the cooling piping is pressed into a groove in the aluminum bottom, and the IGBT is mounted on the aluminum bottom. Like the inductor 54a 'uses a thermally conductive mixture to improve the overall joint between the piping and the base plate. These series diodes are in the right place It is also “floating at high pressure” during operation. In this case, the diode housing typically used in this design does not provide the paper size applicable to the Chinese National Standard (CNS) A4 specification (21〇 > < 297 public love)

(請先閲讀背面之注意事項再填寫本頁) 訂丨(Please read the notes on the back before filling this page) Order 丨

564585 A7 --- -B7_— 五、發明説明(31]~^ ~ ~ 回壓隔離。為了提供所須之隔離,此二極體“hockey pUck,, 裝置被夾在散熱组裝中,其然後被安裝於陶瓷底之頂上, 此底然後被安裝於水冷式鋁底板之頂上。此陶瓷底是剛好 足夠的厚以提供所須之電性隔離,但不會太厚而造成超過 所須之熱阻抗。為此特殊設計,陶瓷是1/16英吋厚的鋁, 雖然亦可使用其他更特殊的材料例如鈹,以更減少在二極 體接合與冷卻水之間之熱阻抗。 水冷式轉換器之第二實施例使用單一冷卻板組裝,其 被接至用於IGBT與二極體之底盤底板。此冷卻板可以藉由 將單件鎳配管焊接至兩個鋁“頂,,與“底,,板而製成。如同以 上所說明,此等IGBT與二極體是被設計藉由使用先前所提 到設於組裝下之陶瓷盤而將熱轉送至冷卻板中。在本發明 之較佳實施例中亦使用冷卻板冷卻方法以冷卻在共振充電 器中之IGBT與二極體,亦可使用導熱桿或熱管將熱由外部 殼體轉送至底盤板。 壓縮頭之詳細說明 比水冷式壓縮頭其電姓設計類似於習知技術之空氣冷 卻式(在反應器設計中使用相同形式之陶瓷電容器與類似 的材料)。在此情形中主要的區別是此模組必要在較高的重 覆速率以及因此在較高的平均功率運作。在壓縮頭模組的 情形中,熱的大部份是在修正之飽和電感器64A中消散。 將次組裝冷卻不是簡單的事情,因此整個殼體是以非常高 壓之短脈衝操作。此問題之解決方案如同於第12、12A與 12B圖所示,是將殼體與接地電位以電感的方式隔離。此 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)564585 A7 --- -B7_— V. Description of the invention (31) ~ ^ ~ ~ Back pressure isolation. In order to provide the required isolation, the diode "hockey pUck", the device is clamped in a heat sink assembly, and then It is mounted on top of a ceramic base, which is then mounted on top of a water-cooled aluminum base plate. This ceramic base is just thick enough to provide the required electrical isolation, but not too thick to cause more than required heat Impedance. For this special design, the ceramic is 1/16 inch thick aluminum, although other more special materials such as beryllium can also be used to reduce the thermal resistance between the diode junction and the cooling water. Water-cooled conversion The second embodiment of the device is assembled using a single cooling plate, which is connected to the chassis bottom plate for the IGBT and the diode. This cooling plate can be welded to the two aluminum "tops," and "bottoms" by welding a single piece of nickel pipe As explained above, these IGBTs and diodes are designed to transfer heat to the cooling plate by using the previously mentioned ceramic discs under assembly. In the comparison of the present invention In the preferred embodiment, a cold plate cooling method is also used to cool the The IGBT and diode in the charger can also use a heat transfer rod or heat pipe to transfer heat from the outer casing to the chassis plate. Detailed description of the compression head Compared with water-cooled compression head, its electrical design is similar to air cooling of conventional technology (The same form of ceramic capacitors and similar materials are used in the reactor design.) The main difference in this case is that the module must operate at higher repetition rates and therefore higher average power. During compression In the case of the head module, most of the heat is dissipated in the modified saturated inductor 64A. Cooling the subassembly is not a simple matter, so the entire housing is operated with very high voltage short pulses. The solution to this problem As shown in Figures 12, 12A, and 12B, the case and the ground potential are isolated by inductance. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)

、可 (請先閲讀背面之注意事項再填寫本頁) 564585 A7 B7 五、發明説明(32 ) 電感是藉由將冷卻配管纏繞在兩個圓柱形狀(其包括鐵磁 核心)周圍而提供。輸入與輸出冷卻管線均纏繞於鐵核心之 圓柱部份周圍,其由兩個圓柱部份與兩個鐵塊所構成如同 於第12、12A與12B中所顯示者。 此鐵件是由CN-20材料所製成,而由Fairfield,New Jersey之Ceramic Magnetics,Inc·所製造。單件之銅配管 (0.187英吋直徑)是按壓安裝而圍繞著電感器64A之殼體 64A1與圍繞著第二繞組的形狀圍繞成繞組的形狀。在終端 留有足夠的長度以經由壓縮頭金屬片蓋中之設備而延伸, 以致於在底盤中沒有冷卻管接頭存在。 電感器64A包括顯示於64A2之鴿尾槽,其類似於在第 一階段反應器殼體水冷式轉換器中所使用者。此殼體除了 鴿尾槽與以前之空氣冷卻式之殼體非常類似。此銅冷水管 是按壓安裝於槽中,以便在殼體與冷水配之間形成良好之 熱連接。亦添加導熱混合物將熱阻抗最小化。 電感器64A之電性設計與在第9A與9B圖中所示之電 感器64稍微改變。電感器64A只在磁核心64A3周圍提供兩 圈(而不是五圈),其由帶之四圈(而不是三圈)所構成。 由於此水冷式配管之導引路線是從輸出電壓至接地電 位,此偏壓電流電路現在稍微不同。如同以前,偏壓電流 是由在轉換器中之dc-dc轉化器(converter)提供經由電纜至 壓縮頭。此電流經由“正”偏壓電感器LB2並連接至Cp-Ι電壓 節點。此電流然後分開其一部份經由高壓電纜(經由變壓器 之次級繞組至接地並回到dc-dc轉化器)回到轉換器 35 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(33 ) (commutator)。另一部份經由壓縮頭反應器Lp-Ι(將磁開關 偏壓)並然後經由冷水配管“負”偏壓電感器LB3並回到接地 與dc-dc轉化器。藉由平衡在各分枝中之電阻,此設計者能 確保足夠的偏壓電流能夠使用於壓縮頭反應器與轉換器變 壓器。 此“正”偏壓電感器LB2被製成非常類似於“負”偏壓電 感器LB3。在此情形中,使用相同的鐵棒與鐵塊作為磁核 心。然而,使用兩個0.125英吋厚的塑膠間隔在磁電路中產 生空氣間隙以致於此核心不會以直流電流飽和。不以冷水 配管圍繞電感器,而是以18AWG鐵弗龍線在此形狀周圍圍 繞。 快速連接 在此較佳實施例中,脈衝功率電性膜組中的三個使用 盲目配對電性連接,以致於所有至雷射系統部份之電性連 接只藉由將模組滑進其在雷射箱的位置中即可達成。這些 是A C分配核組、電源柄組以及共振充電模組。在各情形中 在模組上公或母的插頭與安裝在箱後之母或公的插頭配 對。在各情形中在模組上兩個大約3英吋終端尖細的針導引 此模組進入其正確位置,以致於此等電性插頭適當地配 對。此等盲目配對連接器例如是AMP模型號碼No. 194242-1 是可由AMP,Inc.(其公司辦公室是在Harrisburg, Pennsylvania)以商業方式購得。在此實施例中,連接器是 用於各種功率電路例如:208伏特AC、400伏特AC、1000 伏特DC(電源出與共振充電入)以及用於數種信號電壓。此 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) -36 - (請先閲讀背面之注意事項再填寫本頁)Yes, (please read the precautions on the back before filling this page) 564585 A7 B7 V. Description of the Invention (32) The inductor is provided by winding a cooling pipe around two cylindrical shapes (including the ferromagnetic core). The input and output cooling lines are wound around the cylindrical part of the iron core. It consists of two cylindrical parts and two iron blocks as shown in sections 12, 12A and 12B. This iron piece is made of CN-20 material and is made by Ceramic Magnetics, Inc., of Fairfield, New Jersey. The one-piece copper piping (0.187 inch diameter) is press-fitted to surround the case 64A1 of the inductor 64A and the shape surrounding the second winding is wound into a winding shape. Allow sufficient length at the end to extend through the equipment in the metal head cover of the compression head so that no cooling pipe joints are present in the chassis. Inductor 64A includes a dovetail slot shown at 64A2, which is similar to that used in the first stage reactor housing water-cooled converter. This shell is very similar to the previous air-cooled shell except for the dovetail slot. This copper cold water pipe is pressed into the groove to form a good thermal connection between the shell and the cold water distribution. A thermally conductive mixture is also added to minimize thermal resistance. The electrical design of the inductor 64A is slightly changed from that of the inductor 64 shown in Figs. 9A and 9B. The inductor 64A only provides two turns (rather than five turns) around the magnetic core 64A3, which is composed of four turns instead of three turns. Because the guidance route of this water-cooled piping is from the output voltage to the ground potential, the bias current circuit is now slightly different. As before, the bias current is provided by a dc-dc converter in the converter via a cable to the compression head. This current passes through the "positive" bias inductor LB2 and is connected to the Cp-1 voltage node. This current then separates a part of it through the high-voltage cable (via the secondary winding of the transformer to ground and back to the dc-dc converter) back to converter 35 (please read the precautions on the back before filling this page) Applicable to China National Standard (CNS) A4 specification (210X297 mm) 564585 A7 B7 V. Invention description (33) (commutator). The other part passes the compression head reactor Lp-1 (biasing the magnetic switch) and then "negatively" biases the inductor LB3 through the cold water pipe and returns to ground and the dc-dc converter. By balancing the resistance in each branch, the designer can ensure that sufficient bias current can be used in the compression head reactor and the converter transformer. This "positive" bias inductor LB2 is made very similar to the "negative" bias inductor LB3. In this case, the same iron rod and iron block are used as the magnetic core. However, the use of two 0.125-inch-thick plastic spacers creates an air gap in the magnetic circuit so that the core is not saturated with DC current. Instead of surrounding the inductor with a cold water pipe, surround the shape with an 18AWG Teflon wire. Quick Connect In this preferred embodiment, three of the pulsed power electrical film sets use blindly paired electrical connections, so that all electrical connections to the laser system section are made only by sliding the module into its place. This can be achieved in the position of the laser box. These are A C distribution core group, power handle group and resonance charging module. In each case, the male or female plugs on the module mate with the female or male plugs installed behind the box. In each case, two approximately 3-inch terminal pins on the module guide the module into its correct position so that the electrical plugs are properly mated. Such blind mating connectors are, for example, AMP model number No. 194242-1 and are commercially available from AMP, Inc. (whose corporate office is in Harrisburg, Pennsylvania). In this embodiment, the connector is used for various power circuits such as: 208 volt AC, 400 volt AC, 1000 volt DC (power out and resonance charging in) and for several signal voltages. This paper size applies to China National Standard (CNS) A4 specifications (210X297 public love) -36-(Please read the precautions on the back before filling this page)

564585 A7 B7 五、發明説明(34 ) 種盲目配對連接允許地等模組在幾秒或幾分鐘内除用於保 養並更換。在此實施例中盲目配對連接並排使用於轉換器 模組其模組之輸出電壓是在20至30,000伏特的範圍内。而 且使用典型的高壓連接器。 放電元件 第13與13A(1)圖顯示使用於本發明較佳實施例中之改 良式放電結構。此結構包括本案申請人稱為“葉片介電電 極之電極結構。在此設計中’陽極5 4 0包括純葉片形狀電 極542具有如所示之安裝於陽極兩側上之介電間隔器544, 以改善放電區中氣體流動。此間隔器是在放電區之外間隔 器各終端以螺釘安裝於陽極支撐桿546。此螺釘允許在間隔 器與桿之間之熱膨脹滑動。此陽極是26.4英吋與0.439英对 高。它在底部是0.284英吋寬於頂部是0.141英吋寬。它是 以螺釘經由套管而接至形成流動陽極支撐桿546,其允許電 極從其中央位置作差異熱膨脹。陽極是由以銅為主的合金 所構成較佳是C36000、C95400或C19400。陰極541具有如 於第13A圖中所示之橫截面形狀。陰極材料較佳是 C36000。此葉片介電結構之其他細節是在美國專利申請案 號09/768J53中提供而在此併入作為參考。在此結構中之 電流折回548是由鯨骨形部份構成,其具有27個肋沿著電極 542的長度等距間隔,在第13A(1)圖中顯示其橫截面。如上 所述,此電流折回是由金屬片製成,且此等鯨骨肋(各具有 橫截面大小是大約0.15英吋x0.09英吋)被彎曲以致於各肋 之長的尺寸是在電流流動的方向。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 37 (請先閲讀背面之注意事項再填寫本頁)564585 A7 B7 V. Description of the invention (34) The blind pairing connection allows the ground waiting module to be used for maintenance and replacement within seconds or minutes. In this embodiment, the blind paired connection is used side by side for the converter module. The output voltage of the module is in the range of 20 to 30,000 volts. And use typical high-voltage connectors. Discharge Element Figures 13 and 13A (1) show a modified discharge structure used in the preferred embodiment of the present invention. This structure includes an electrode structure referred to by the applicant as a "blade dielectric electrode. In this design, the 'anode 5 40' includes a pure blade-shaped electrode 542 with a dielectric spacer 544 mounted on both sides of the anode as shown, to Improve the gas flow in the discharge zone. This spacer is installed outside the discharge zone with screws on the anode support rod 546. This screw allows thermal expansion and sliding between the spacer and the rod. The anode is 26.4 inches and 0.439 inches to height. It is 0.284 inches wide at the bottom and 0.141 inches wide at the top. It is connected by screws through a sleeve to form a flowing anode support rod 546, which allows the electrode to undergo differential thermal expansion from its central position. The anode It is composed of a copper-based alloy, preferably C36000, C95400, or C19400. The cathode 541 has a cross-sectional shape as shown in Figure 13A. The cathode material is preferably C36000. Other details of the blade dielectric structure Is provided in U.S. Patent Application No. 09 / 768J53 and is incorporated herein by reference. The current reentrant 548 in this structure is composed of a whale-shaped portion with 27 ribs along the electrode 542 The length is equidistantly spaced, and its cross section is shown in Figure 13A (1). As mentioned above, this current retracement is made of metal sheet, and these whale ribs (each with a cross section size of about 0.15 inches x 0. 09 inches) is bent so that the length of each rib is in the direction of current flow. This paper size applies to China National Standard (CNS) A4 (210X297 mm) 37 (Please read the precautions on the back before filling in this page)

564585 A7564585 A7

五、發明説明(35 ) (請先閲讀背面之注意事項再填寫本頁) 在第13 A2圖中顯示用於陽極之替代介電間隔器設計 以更改善流動。在此情形中間隔器與形成流動陽極支撐桿 完美地配對以提供更佳之氣體流動路徑。本案申請人稱此 為其為“快速折回”葉片介電陽極設計。 替代脈衝功率電路 於第5C1、5C2與5C3圖中顯示第二較佳脈衝功率電 路。此電路類似於以上所述者,但使用更高壓電源用於將 co充電至更高的值。如同在上述的實施例中,高壓脈衝電 源單元是由來自發電廠的電力而在230或460伏特AC操 作,如上所述它是用於快速充電共振充電器之電源,且被 設計用於在頻率4000至6000Hz將兩個2.17uF之電容器充電 至大約1100V至2250伏特範圍之電壓。此等用於主振盪器 之轉換器與壓縮頭中之電性元件是與在功率放大器中相對 應元件儘可行地相同。如此作是保持在兩電路中時間響應 儘量可行地相同。開關46是兩個IGBT開關之庫各在33〇〇 伏特且配置成並聯。此C〇容器庫42是由128個0·〇68μΡ之 1600V電容器配置成64個並聯對以提供2.17pF C〇庫。(^電 容器庫52是由136個0.068pF之1600V電容器所構成而配置 成68個並聯對以提供2.33pF之庫電容。(:…與心電容器庫是 與參考第5圖以上所說明者相同。飽和電感器54是單圈電感 器提供大約3.3nH之飽和電感,其具有5個核心由〇.5英对厚 50%-50%犯*^6構成,具有4.9英吋之外直徑與3.8英对之内 直徑。飽和電感器64是兩圈電感器提供大約38Nh之飽和電 感各有5個核心由0.5英吋厚80%-20%,Ni-Fe構成,具有5 本紙張尺度適用中國國家標準(CNS) A4规格(210X297公釐) 38 564585 A7 —___B7_ 五、發明説明(36 ) 英吋之外直徑與2.28英吋之内直徑。設有觸發電路用於以 兩奈秒之時間準確度將IGBT 46關閉。此主振盪器典型地 是在用於功率放大器之IGBT觸發之前被觸發40ns。然而, 準確的時間是由來自感測器之回饋信號所完全決定,此感 測器量測主振盪器輸出時間與功率放大器之放電時間。 脈衝長度 由本案申請人對此等F2雷射在測試中所量測之輸出脈 衝長度是在大約12奈秒之範圍中,且在某些程度上是兩個 放電相對時間之函數。較長的脈衝長度(其他方面相同)可 以增加微影術設備之光學元件之使用壽命。 本案申請人辨識了數種用於增加脈衝長度之技術。如 以上所示,在放電之間之相對時間可以被最適化而用於脈 衝長度。MO與PA之脈衝功率電路均可被最適化而用於較 長之脈衝,其使用之技術例如是在美國專利申請案號 09/451,995中說明而在此併入作為參考,一光學脈衝放大 系統(例如在美國專利案號6,067,311中所說明之一,而在此 併入作為參考)可以被加至PA之下游以降低各別脈衝之強 度。在下一節將說明較佳脈衝放大器單元(亦稱為脈衝延長 器)。此脈衝放大器可以被製成為至微影術工具之透鏡成份 之光線路徑之一部份。此室可以被製得更長且電極可以被 設計以產生用於較長脈衝長度之行波放電。 脈衝放大器單元 於第22A圖中顯示較佳脈衝放大器單元。從雷射50來 的光線20擊中分光器22。分光器具有大約40%之反射率。 39 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(37 ) 光線之大約40%反射作為輸出光線30之第一部份。入射光 之其餘部份經由分光器22透射為光線24。此光線由鏡子26 以小的角度反射回,此鏡為球面鏡所具有之焦距長度等於 由分光器22至鏡子的距離。因此,此光線被聚焦至靠近分 光器22之點27但稍微偏離。此光線繼續進行且由鏡子28反 射,其亦為球面鏡而所具有焦距之長度等於由此鏡至點27 之距離。鏡子28以小角度將光線反射回並將反線光調準。 此反射光線32向右傳送且由鏡子29反射至分光器22,在此 處大約60%之光線經由分光器22透射而併入且成為輸出光 線30之第二部份。光線34之一部份(大約40%)由分光器22 反射於光線24的方向中而重覆光線32所經之路程。因此, 短的輸入脈衝被分成幾個部份,因此光線傳送之整個期間 增加且其尖峰強度減少。鏡子26與28構成傳送系統其將輸 出光線之一此部份反射在彼此之上。因為此照射(反射), 輸出光線之各部份實質上相同(如果鏡子26與28是平面 鏡,光線分散將對每次隨後重覆的反射擴散,因此對於每 次重覆的反射光線的大小將不同)。此從分光鏡22至鏡子26 至鏡子28至鏡子27以及最後至分光器22之整個光線路徑長 度決定在重覆之間時間的延遲。第22B1圖顯示由ArF受激 準分子雷射所產生典型脈衝之脈衝輪廓(此等結果可以被 應用至F2雷射,所不同的是,此用於F2雷射之未放大脈衝 之是大約12奈秒,而不是用於ArF之大約18奈秒)。第22B2 圖顯示在根據第6圖所製脈衝延長器中經擴散後之類似 ArF雷射脈衝之模擬輸出脈衝輪廓。在此例中脈衝之Tis從 40 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(38 ) 18.16ns增加至45.78ns。(Tis是用於說明雷射脈衝之脈衝期 間之量測。它是關於完整正方形脈衝期間。) 第22C圖顯示類似於第24A圖佈局之佈局設計但具有 另外的延遲路徑。在此情況中,第一分光器22A被設計用 於反射25%且第二分光鏡22B被設計用於反射40%的光。在 第22D圖中顯示由電腦模擬所產生光線之形狀,此用於延 長脈衝之Tis大約為73.2ns。在第22C圖的實施例中,此經由 分光器22B所透射之光線之部份,當其返回時倒轉方向而 加入輸出光線30中。此種現象大幅地降低此光線之空間凝 聚性。 第22E與F圖顯示分光器設計其使用沒有塗曾之光學 元件。第22E圖顯示分光器設計其利用失敗的内部反射, 以及第22F圖傾斜之透明未塗層板從板之兩面生菲仕蘭 (Fresnel)反射以達成所期望之反射/透射比率。 此脈衝延長單元可以如上所建議安裝於垂直光學台11 之後背中,或它可以安裝於台之頂上或甚至台之内部。 脈衝與劑量能量控制 脈衝能量與劑量能量較佳是以以上所說明之回饋控 制系統與方法控制。此脈衝能量監視器可以在雷射由於在 微影術工具中較接近晶圓。使用此技術選擇充電電壓以產 生所期望之脈衝能量。在以上之較佳實施例中,MO與PA 均被提供相同之充電電壓,因為C〇電容器是被並聯充電。 如同以上所討論,本案申請人確定此技術運作良好, 且將時間不穩定之問題最小化。然而,此技術確實將此問 41 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(39 ) 題降低至此種程度使雷射操作者控制M0的能力是與PA無 關。然而,可以分別地控制MO與PA之一些操作參數而將 各單元之表現最適化。這些其他的參數包括:雷射氣體壓 力、F2濃度以及雷射氣體溫度。此等參數較佳在各兩室中 獨立地控制並且在處理器控制的回饋配置中調整。 其他光學品質之改進 本發明提供一種雷射系統其能夠在較習知技術之單 室高重覆率氣體放電雷射更大的脈衝能量與輸出功率。以 此系統此主張盪器至相當大程度地決定波長與頻帶寬度並 且功率大器主要控制脈衝能量。如第6B圖中所示,此用於 功率放大器有效種子光線所須之脈衝能量可以低至毫焦耳 (mJ)之一小部份。因為此主振盪式雷射能夠容易地產生5mJ 之脈衝,它有能量剩餘。此額外的脈衝能量提供機會以使 用某些用於改善光線品質之技術,此技術目前並非特別地 有能量效率。 這些技術包括: •脈衝修剪,如同在美國專利案號5,852,621中說明而 在此併入作為參考。脈衝能量被監視,此脈衝被延 遲,並使用一種非常快的光學開關(例如Pockels cell) 將此延遲脈衝的一部份修剪。 •使用線窄化模組,其具有非常高的光線擴張與小的 孔徑而在本案稍後說明。 •波前工程 腔之間波前修正功能可以被添加至主振盪器或主 42 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 _______B7_ 五、發明説明(4〇 ) 振盪器之下游。這可以包括使用具有一或多個彎曲 之光柵如同於美國專利申請案號〇9/7〇3,317中所說 明而在此併入作為參考。可變形鏡子波前修正亦可 為靜態修正’例如設計非平面鏡非平面積鏡表面以 修正已知之波前失真。 •光線過遽 光線過濾器,例如是空間濾波器如同在美國專利申 請案號09/309,478中所說明而在此併入作為參考, 且於第23圖中11所示可以被添加以減少頻帶寬度。 光線過濾器可以設於MO共振腔中或在M0與PA之 間,其亦可加至PA之下游。一種較佳之空間濾波器 不須要光線經由焦點傳播是一種在下節中所說明 之全内部空間濾波器。 •凝聚性控制 雷射光線之凝聚性對於積體電路製造者可以問 題,氣體放電雷射典型地產生具有低凝聚性之雷射 光線。然而,當頻帶寬度被使得非常窄時,其結果 是輸出光線較大之凝聚性。為此原因,可能會期望 有一些導入之空間非减聚性。用於降低凝聚性之光 學元件較佳被加至MO共振腔中或在M0與PA之 間。已知有數種光學元件用於降低光線之凝聚性, 例如移動相位皮或聲音光學裝置。 •設定孔徑 種子光線之光線品質亦可藉由較窄之光線孔徑而 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -43 (請先閲讀背面之注意事項再填寫本頁) 、可| 564585 A7 B7 發明説明(41 改善。 全内部反射空間濾波器 空間過濾可以有效地減少95%經整合之頻帶寬度。然 而,所有以前所建議的直接空間濾波技術至少須要集中光 線,且在大部份情形中須要實際上將光線聚焦。此外,所 有以前之設賴要多個光學元件。如果期望作空間滤波的 話’一種簡單緊密且不須要聚點光線之空間遽波器,可以 更容易適合用於安裝在雷射共振器之内部。 一種較佳的濾波器是單一稜鏡大約兩英吋長。此稜鏡 之進出面是彼此平行且垂直於入射光線。另兩個面是彼此 平行,但其方向是與相對於入射與射出面之臨界角(cdtical angle)相等。在CaF2中在大約157奈米波長之臨界角為39 89 度。此唯一所須的塗層是在稜鏡之入射與射出面之正常入 射抗一反射塗層。 此空間濾波器以以下的方式運作:光線將垂直入射進 入於稜鏡之進入表面。光線然後傳送至稜鏡表面之臨 角。如果光線被調準則所有的光線將以臨界角入射於第 面。然而,如果光線是發散或聚集,則一些光線將以大於 或小於臨界角的角度搫中此面。所有以等於大於臨界角 中此面的光線將100%地反射。以小於臨角的角度擊中此 的光線將少於100%地反射且會衰減。所有反射的光線將 相同的角度入射於稜鏡之相對面而在此光線亦會以相同 數置衰減。在所建議之設計中對於光線每次通過會有總 六個反射。此對於小於臨界角/亳徑(mrad)之角度之卩_偏極 界 擊 面 以 的 共 (請先閱讀背面之注意事項再填寫本頁) -訂丨· 564585 五、發明説明(42 ) 第 角 第 A7 B7 化光之反射率是大約71%。因此,所有的光線其入射角與 臨界角相差/mrad或更多在其射出面將透射少於其原強度 之 13%。 然而,光線一次通過此濾波器將是單面的。所有的入 射光線其入射角大於臨界角將100〇/〇的反射。一旦離開此空 間滤、波棱鏡’此光線將入射於鏡子上。在雷射共振写中此 鏡子可以是輸出搞合器。在從鏡子反射後,光線將重新進 入空間濾波稜鏡,但有重大之不同。所有以大於臨界角離 開空間滤波器的光線在從鏡子反射後將被倒轉。此等光線 現在將以小於臨界角的角度重新進入稜鏡並且將衰減。此 光線之第二次通過此稜鏡而改變此稜鏡之傳送功能從一面 濾波器成為真正的帶通濾波器。 第23B圖顯示空間濾波器之設計。此稜鏡之輸入與輸 出面是1/2英吋。臨界角面是大約2英吋。此輸入光線寬度 是2·6毫米且代表短轴中光線之寬度。此稜鏡在圖的平面中 會有英吋的高度。此圖顯示三組光線。此第一組光線被對 準並以臨界角擊中此表面。這些是綠光。第二組光線是以 小於臨界角的角度入射此表面並且在第—次反射結束。這 些是藍光。這些光線在放大部份更可看見。他們代表在k 一次通過時衰減的光線。最後-組光線以大於臨界角之 度入射。這些光線經由整個第一次通過而傳送,但是在 二次通過之第-次反射結束。它們代表光線在第二次通過 時衰減。 在室之間的望遠鏡 本紙張尺度適用中國國家標準A4規格(21〇><297公爱) (請先閲讀背面之注意事項再填寫本頁)5. Description of the invention (35) (Please read the notes on the back before filling out this page) Figure 13 A2 shows the design of an alternative dielectric spacer for the anode to improve the flow. In this case the spacers are perfectly matched to form a flowing anode support rod to provide a better gas flow path. The applicant in this case called it a “quick-return” blade dielectric anode design. Alternative Pulsed Power Circuits The second preferred pulsed power circuit is shown in Figures 5C1, 5C2 and 5C3. This circuit is similar to the one described above, but uses a higher voltage power supply to charge co to a higher value. As in the embodiment described above, the high-voltage pulsed power supply unit is operated at 230 or 460 volts AC by power from a power plant. As mentioned above, it is a power source for fast charging resonance chargers and is designed to operate at frequency 4000 to 6000 Hz charges two 2.17uF capacitors to a voltage in the range of approximately 1100V to 2250 volts. The electrical components in these converters and compression heads for the main oscillator are as far as possible equivalent to the corresponding components in the power amplifier. This is done to keep the time response as feasible as possible in both circuits. Switch 46 is a bank of two IGBT switches each at 33,000 volts and configured in parallel. The Co container library 42 is configured by 128 0.68 μP 1600V capacitors into 64 parallel pairs to provide a 2.17 pF Co library. (^ Capacitor bank 52 is composed of 136 0.068pF 1600V capacitors and configured into 68 parallel pairs to provide a 2.33pF bank capacitance. (: ... and the core capacitor bank are the same as those described above with reference to Figure 5). Saturated inductor 54 is a single-turn inductor that provides approximately 3.3nH of saturated inductance. It has 5 cores consisting of 0.5 inches to 50% -50% thickness * ^ 6, with a diameter of 4.9 inches and 3.8 inches. Internal diameter. Saturated inductor 64 is a two-turn inductor that provides approximately 38Nh of saturated inductance. Each of the five cores is made of 0.5-inch thick 80% -20%, Ni-Fe. (CNS) A4 specification (210X297 mm) 38 564585 A7 —___ B7_ V. Description of the invention (36) Outside diameter and 2.28 inches inside diameter. A trigger circuit is used to set the time accuracy with two nanoseconds. IGBT 46 is off. This main oscillator is typically triggered 40ns before the IGBT trigger for the power amplifier. However, the exact time is completely determined by the feedback signal from the sensor, which measures the main oscillation Output time of the amplifier and discharge time of the power amplifier. The length of the output pulses measured by the applicant in this case for these F2 lasers in the test is in the range of about 12 nanoseconds, and to some extent is a function of the relative time of the two discharges. Longer pulses The length (same in other respects) can increase the service life of the optical components of the lithography equipment. The applicant in this case identified several techniques for increasing the pulse length. As shown above, the relative time between discharges can be optimized For pulse length, both the MO and PA pulse power circuits can be optimized for longer pulses. The technology used is described in US Patent Application No. 09 / 451,995, which is incorporated herein by reference. An optical pulse amplification system (such as one described in US Patent No. 6,067,311, which is incorporated herein by reference) can be added downstream of the PA to reduce the intensity of individual pulses. The better pulses will be explained in the next section Amplifier unit (also known as pulse extender). This pulse amplifier can be made as part of the light path to the lens component of the lithography tool. This chamber can Made longer and the electrodes can be designed to produce traveling wave discharges for longer pulse lengths. The pulse amplifier unit is shown in Figure 22A as a better pulse amplifier unit. The light 20 from the laser 50 hits the beam splitter 22 The spectroscope has a reflectivity of about 40%. 39 (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) 564585 A7 B7 V. Description of the invention ( 37) Approximately 40% of the light is reflected as the first part of the output light 30. The remaining part of the incident light is transmitted to the light 24 through the beam splitter 22. This light is reflected back at a small angle by the mirror 26, which is a spherical mirror with a focal length equal to the distance from the beam splitter 22 to the mirror. Therefore, this light is focused to the point 27 near the beam splitter 22 but deviates slightly. This light continues and is reflected by mirror 28, which is also a spherical mirror and has a focal length equal to the distance from this mirror to point 27. The mirror 28 reflects the light back at a small angle and aligns the reflected light. This reflected light 32 is transmitted to the right and reflected by the mirror 29 to the beam splitter 22, where about 60% of the light is transmitted through the beam splitter 22 and merges into the second part of the output light 30. A portion (approximately 40%) of the ray 34 is reflected by the beam splitter 22 in the direction of the ray 24 and repeats the distance traveled by the ray 32. Therefore, the short input pulse is divided into several parts, so the entire period of light transmission increases and its peak intensity decreases. The mirrors 26 and 28 constitute a transmission system which reflects one part of the output light onto each other. Because of this illumination (reflection), the parts of the output light are substantially the same (if the mirrors 26 and 28 are flat mirrors, the light dispersion will diffuse each subsequent repeated reflection, so the size of each repeated reflection light will be different). The length of the entire ray path from beam splitter 22 to mirror 26 to mirror 28 to mirror 27 and finally to beam splitter 22 determines the time delay between repetitions. Figure 22B1 shows the pulse profile of a typical pulse generated by an ArF excimer laser (these results can be applied to an F2 laser, the difference is that the unamplified pulse for an F2 laser is approximately 12 Nanoseconds, not about 18 nanoseconds for ArF). Figure 22B2 shows the simulated output pulse profile of an ArF-like laser pulse after diffusion in a pulse extender made according to Figure 6. In this example, the Tis of the pulse is from 40 (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 B7 V. Description of the invention (38) 18.16 ns increased to 45.78ns. (Tis is a measurement used to describe the pulse period of a laser pulse. It is about the complete square pulse period.) Figure 22C shows a layout design similar to the layout in Figure 24A but with an additional delay path. In this case, the first beam splitter 22A is designed to reflect 25% and the second beam splitter 22B is designed to reflect 40% of light. Figure 22D shows the shape of the light generated by the computer simulation. The Tis used to extend the pulse is about 73.2ns. In the embodiment of FIG. 22C, the part of the light transmitted through the beam splitter 22B is inverted and added to the output light 30 when it returns. This phenomenon greatly reduces the spatial cohesion of this light. Figures 22E and F show the design of the beam splitter using uncoated optics. Figure 22E shows the beamsplitter design which uses failed internal reflections, and Figure 22F is a slanted, transparent uncoated plate that reflects Fresnel from both sides of the plate to achieve the desired reflection / transmission ratio. This pulse extension unit can be installed in the back of the vertical optical table 11 as suggested above, or it can be installed on top of the table or even inside the table. Pulse and dose energy control The pulse energy and dose energy are preferably controlled by the feedback control system and method described above. This pulse energy monitor can be closer to the wafer in laser due to the lithography tool. Use this technique to select the charging voltage to produce the desired pulse energy. In the above preferred embodiment, both MO and PA are provided with the same charging voltage, because the Co capacitor is charged in parallel. As discussed above, the applicant in this case determined that the technology worked well and minimized the problem of time instability. However, this technology does ask this question 41 (please read the notes on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 B7 V. Description of the invention (39) Reduction to this level enables the laser operator to control M0 independently of PA. However, some operating parameters of MO and PA can be controlled separately to optimize the performance of each unit. These other parameters include: laser gas pressure, F2 concentration, and laser gas temperature. These parameters are preferably controlled independently in each of the two chambers and adjusted in a processor-controlled feedback configuration. Other improvements in optical quality The present invention provides a laser system that can achieve greater pulse energy and output power than conventional single-cell high-repetition gas discharge lasers. In this system, the oscillator determines the wavelength and frequency bandwidth to a large extent, and the power amplifier mainly controls the pulse energy. As shown in Figure 6B, the pulse energy required for the effective seed light of the power amplifier can be as low as a fraction of a millijoule (mJ). Because this main oscillating laser can easily generate a 5mJ pulse, it has energy remaining. This additional pulse energy provides an opportunity to use certain techniques for improving light quality, which are not currently particularly energy efficient. These techniques include: • Pulse trimming, as described in U.S. Patent No. 5,852,621 and incorporated herein by reference. The pulse energy is monitored, the pulse is delayed, and a portion of this delayed pulse is trimmed using a very fast optical switch, such as a Pockels cell. • Use a line narrowing module, which has very high light expansion and a small aperture, which will be explained later in this case. • The wavefront correction function between the wavefront engineering cavities can be added to the main oscillator or main 42 (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) ) 564585 A7 _______B7_ V. Description of the invention (40) Downstream of the oscillator. This may include the use of a grating having one or more bends as described in U.S. Patent Application No. 09 / 703,317 and incorporated herein by reference. The deformable mirror wavefront correction can also be a static correction ', such as designing a non-planar mirror and a non-planar mirror surface to correct known wavefront distortions. Light-passing light filters, such as spatial filters, as described in US Patent Application No. 09 / 309,478, incorporated herein by reference, and can be added to reduce the bandwidth as shown at 11 in FIG. 23 . The light filter can be placed in the MO cavity or between M0 and PA, or it can be added downstream of the PA. A better spatial filter, which does not require light to propagate through the focus, is a fully internal spatial filter described in the next section. • Cohesiveness control The cohesiveness of laser light can be a problem for integrated circuit manufacturers. Gas discharge lasers typically produce laser light with low cohesiveness. However, when the bandwidth is made very narrow, the result is a large cohesiveness of the output light. For this reason, some introduction of space non-depolymerization may be expected. The optical element for reducing cohesion is preferably added to the MO cavity or between M0 and PA. Several types of optical elements are known for reducing the cohesiveness of light, such as mobile phase skins or acoustic optical devices. • Set the aperture. The light quality of the seed light can also be narrower. The paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) -43 (Please read the precautions on the back before filling this page) , 可 | 564585 A7 B7 Invention description (41 improvements. Total internal reflection spatial filter spatial filtering can effectively reduce 95% of the integrated frequency bandwidth. However, all the previously proposed direct spatial filtering techniques need to focus at least the light, and In most cases, it is necessary to actually focus the light. In addition, all previous designs relied on multiple optical elements. If spatial filtering is desired, 'a simple and compact spatial wave filter that does not need to focus light can be easier Suitable for installation inside a laser resonator. A preferred filter is a single chirp that is approximately two inches long. The entrance and exit sides of the chirp are parallel to each other and perpendicular to the incident light. The other two faces are parallel to each other , But its direction is equal to the critical angle (cdtical angle) with respect to the entrance and exit planes. In CaF2, the critical angle at a wavelength of about 157 nm It is 39 89 degrees. The only coating required is the normal incidence anti-reflection coating on the entrance and exit surfaces of the radon. This spatial filter works in the following way: light will enter the radon into the entrance of the radon The surface. The light then travels to the corner of the puppet surface. If the light is adjusted, all the light will be incident on the first surface at a critical angle. However, if the light is divergent or concentrated, some of the light will be greater or less than the critical angle. The angle hits this surface. All light rays that are greater than the critical angle in this surface will be reflected 100%. Light rays that hit this angle at angles less than the critical angle will be reflected less than 100% and will attenuate. All reflected rays will be The same angle is incident on the opposite side of 稜鏡 and the light will be attenuated by the same number. In the proposed design, there will be a total of six reflections for each pass of the light. This is less than the critical angle / radius (mrad ) Of the angle of the __ polar polar strikes the face of the total (please read the precautions on the back before filling out this page)-Order 丨 · 564585 V. Description of the invention (42) The angle of reflection A7 B7 is about 71%. Therefore, all rays whose angle of incidence differs from the critical angle / mrad or more will transmit less than 13% of their original intensity at their exit surface. However, the rays will pass through this filter once. All The incident light whose angle of incidence is greater than the critical angle will reflect 100/0. Once it leaves the spatial filter, the wave prism 'this light will be incident on the mirror. In laser resonance writing, this mirror can be an output coupler. After reflecting from the mirror, the light will re-enter the spatial filter, but there are significant differences. All rays leaving the spatial filter at a greater than critical angle will be inverted after reflecting from the mirror. These rays will now The angle re-enters the beam and will attenuate. The light passes through the beam a second time and changes the transmission function of the beam from a side filter to a true band-pass filter. Figure 23B shows the design of the spatial filter. The input and output sides of this frame are 1/2 inches. The critical angle is about 2 inches. The input light width is 2.6 mm and represents the width of the light in the short axis. This frame will have an inch height in the plane of the figure. This figure shows three groups of light. This first group of rays is aligned and hits the surface at a critical angle. These are green lights. The second group of rays enters this surface at an angle less than the critical angle and ends at the first reflection. These are blue light. These rays are more visible in the enlarged part. They represent light that decays during one pass of k. The last-group of rays is incident at a greater angle than the critical angle. These rays travel through the entire first pass, but end at the first reflection of the second pass. They represent the attenuation of light on the second pass. Telescopes between rooms This paper scale is in accordance with Chinese national standard A4 (21〇 > < 297 public love) (Please read the precautions on the back before filling this page)

-45 564585 A7 ______B7 五、發明説明(43 ) 在較佳實施例中,在主振盪器之輸出與功率大器之輸 入之間設有圓柱形之折射望遠鏡。此控制了進入此功率放 大器光線之水平大小。前可使用為人所熟知的技術設計此 望遠鏡以控制光線之水平擴散。 量測學 在本發明較佳的實施例中脈衝能量以由快速光二極 體忐量監視器之回饋在脈衝至脈衝的基礎上監視且控制。 在許多應用中並未設有波長與頻帶寬度之脈衝至脈衝之監 視,因為主要F2線之天然中央線波長與頻帶寬度是相當一 定的。然而,如果想要的話,波長與頻率均可與在習知技 術中受激準分子雷射通常相同的方式監視,但是是在157 奈米的波長監視。 功率監視器(p-cells)較佳應設置於主振盪器之輸出, 在功率放大之後以及在脈衝放大之後。較佳亦應設有 用於監視任何回復反射進入主振盪器。此種回復反射會在 振盪器中放大並損害主振盪器光學元件。如果超過了危險 臨,此來自回復反射監視器的信號被使用將雷射關掉。亦 應設計此系統以避免在光線路徑中之返照其可能造成任何 重大的回復反射。 以下說明用於此雷射之光線參數量測與控制。於本實 施例中所使用的波長計(wavemeter)類似於在美國專利案 號5,978,394中所說明者,並且以下之一些說明是由該申請 案節錄而出。在157奈米波長的範圍中,波長與頻帶寬度量 測兀件會受到幅射損害,因此本案申請人建議這些量週期 本紙張尺度適用中國國%標準(CNS) A4規格(210X297公董) 46 (請先閲讀背面之注意事項再填寫本頁) 、\t— 564585 A7 -----^___B7__ 五、發明説明(44 ) 性而非在脈衝至脈衝的基礎上實施。例如,波長與頻帶寬 度了以在母各10勿鐘的週期監視3 〇個脈衝。以此速率此用 於雷射之置測元件應具有至少可與£]^與八1^雷射相比 較之使用壽命。為達此目的應設有用於波長計之開關器以 阻止光線進入波長與頻帶寬度量測元件。 在此等單元中之光學設備量測脈衝能量、波長與頻帶 覓度。此等量測與回饋電路一起使用,而將脈衝能量與波 長維持在各期望的限制内。 雷射光線之一小部份被反射至能量偵測器,它包括非 常快速之光二極體其能量測發生在每秒4〇〇〇脈衝速率之個 別脈衝之能量。此脈衝能量大約1〇mJ,且偵測器69之輸出 被饋至電腦控制器,其使用特殊算法以調整雷射充電電 壓’而根據所儲存之脈衝能量資料以準確地控制將來脈衝 之脈衝能量,以便限制個別脈衝能量之變化以及突發脈衝 整體能量之變化。 根據以上所說明之各脈衝之脈衝能量之量測,而可以 控制在此之後脈衝之脈衝能量以維持所期望之脈衝能量以 及特定數目脈衝之所期望之所有整合劑量,以上所有這些 是在美國專利案號6,005〔879“受激準分子雷射之脈衝能量 控制”中,其在此併入作為參考。 線選擇 以稜鏡為主之線選擇器 在較佳的實施例中,最強之天然F2共振線是使用一種 五稜鏡線選擇器選出如在第16A與B圖中所示者。此五個稜 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 47 (請先閲讀背面之注意事項再填寫本頁) 、^τ— 564585 A7 B7 五、發明説明(45 ) 鏡112 A-E是精確地安裝於位於LSP 10C中(未圖示)之單稜 鏡板上如於第1圖中所示者。此LSP位於主振盪器之下游, 而位於主振盪器輸出耦合器之短距離之下游此各五稜鏡是 65度(頂角)稜鏡且水平配置如同於第16A圖中所示者。對於 此特殊實施例之稜鏡入射角為如下,對於稜鏡U2A-E各 為:79.6。、61.4。、47.7。、71.7。以及42.1。(許多其他稜鏡結 構可以提供類似的結果)。 如於第1圖中所示,鏡子114B被設置定位將光線向上 反射至鏡114C,其被設置定位以反射此光線經由孔徑(未圖 示)而進入功率放大器之放電區中如同於第12A圖中所示 者。此五稜鏡線選擇器在157.63奈米與157.52奈米F2線之間 產生10.56亳徑(milli-radian)之角度擴散,其在大約〇·5米距 離下游之處在功率放大器前之孔徑產生大約5 5亳米(mni) 之空間分離。此種擴散足夠容易分離出157 52奈米線。 環形線選擇器 在第16E圖中顯示另一稜鏡線選擇單元,此為環形結 構。它可以被插入於光路徑中而不會干擾光線之方向。在 此實施例中,此環由四個450項角稜鏡與四個65。角稜鏡所 構成。-45 564585 A7 ______B7 V. Description of the Invention (43) In a preferred embodiment, a cylindrical refracting telescope is provided between the output of the main oscillator and the input of the power amplifier. This controls the level of light entering the power amplifier. This telescope has previously been designed using well-known techniques to control the horizontal spread of light. Metrology In the preferred embodiment of the present invention, the pulse energy is monitored and controlled on a pulse-to-pulse basis with feedback from a fast photodiode mass monitor. Pulse-to-pulse monitoring of wavelength and bandwidth is not provided in many applications because the natural centerline wavelength and bandwidth of the main F2 line are quite constant. However, if desired, both wavelength and frequency can be monitored in the same way as excimer lasers are conventionally known, but at a wavelength of 157 nm. Power monitors (p-cells) should preferably be set at the output of the main oscillator, after power amplification and after pulse amplification. It should preferably also be provided for monitoring any retro-reflection into the main oscillator. This retro-reflection amplifies and damages the main oscillator optics in the oscillator. If danger is exceeded, this signal from the retro-reflective monitor is used to turn the laser off. This system should also be designed to avoid back reflections in the light path which could cause any significant retroreflections. The following describes the measurement and control of light parameters for this laser. The wavemeter used in this embodiment is similar to that described in U.S. Patent No. 5,978,394, and some of the following descriptions are extracted from this application. In the range of 157 nanometer wavelengths, the wavelength and bandwidth measuring elements will be damaged by radiation. Therefore, the applicant of this case recommends that these measurement periods apply the Chinese National Standard (CNS) A4 specification (210X297). 46 (Please read the notes on the back before filling this page), \ t— 564585 A7 ----- ^ ___ B7__ V. Description of the invention (44) It is not implemented on a pulse-to-pulse basis. For example, the wavelength and frequency bandwidth are monitored with 30 pulses at a period of 10 clocks each. At this rate, the measurement element used for lasers should have a service life comparable to at least £] ^ and eight 1 ^ lasers. To this end, a switch for a wavelength meter should be provided to prevent light from entering the wavelength and bandwidth measuring elements. The optical equipment in these units measures pulse energy, wavelength, and frequency band search. These measurements are used with feedback circuits to maintain the pulse energy and wavelength within the desired limits. A small portion of the laser light is reflected to the energy detector, which includes a very fast light diode whose energy is measured at the energy of individual pulses at a pulse rate of 4,000 per second. This pulse energy is about 10mJ, and the output of the detector 69 is fed to the computer controller, which uses a special algorithm to adjust the laser charging voltage 'and accurately control the pulse energy of future pulses based on the stored pulse energy data. In order to limit the change of individual pulse energy and the overall energy of the burst pulse. According to the measurement of the pulse energy of each pulse described above, the pulse energy of the pulses thereafter can be controlled to maintain the desired pulse energy and the desired integrated dose of a specific number of pulses, all of which are in the US patent Case No. 6,005 [879 "Pulse Energy Control of Excimer Laser", which is incorporated herein by reference. Line Selection Line Selector with 稜鏡 In the preferred embodiment, the strongest natural F2 resonance line is to use a five 稜鏡 line selector to select one as shown in Figures 16A and B. These five prism paper sizes are in accordance with China National Standard (CNS) A4 specifications (210X297 mm) 47 (Please read the precautions on the back before filling this page), ^ τ— 564585 A7 B7 V. Description of the invention (45) Mirror The 112 AE is precisely mounted on a single board located in the LSP 10C (not shown) as shown in Figure 1. This LSP is located downstream of the main oscillator and a short distance downstream of the main oscillator output coupler. Each of these five angles is 65 degrees (apex angle), and the horizontal configuration is as shown in Figure 16A. The angle of incidence for this particular embodiment is as follows, for each of U2A-E: 79.6. , 61.4. , 47.7. , 71.7. And 42.1. (Many other tritium structures can provide similar results). As shown in FIG. 1, the mirror 114B is positioned to reflect light upward to the mirror 114C, and it is positioned to reflect this light into the discharge area of the power amplifier through the aperture (not shown) as in FIG. 12A. As shown. This penta-line selector produces an angular spread of 10.56 milli-radian between the 157.63 nm and 157.52 nm F2 lines, which produces an approximate aperture in front of the power amplifier about 0.5 m downstream 5 5 亳 m (mni) space separation. This diffusion is easy enough to separate 157 52 nm wires. Circle Line Selector Another line selection unit is shown in Fig. 16E, which is a circle structure. It can be inserted into the light path without disturbing the direction of the light. In this embodiment, the ring consists of four 450-term corners and four 65s. Horned owl.

Lyot濾波器 如於第16A圖所示,與以稜鏡為主之線選擇器之另外 的方式是Lyot濾波器。此濾波器使用例如是MgF2i非均向 性結晶材料之雙折射擴散,而將取決於波長之光線之偏極 化旋轉。藉由適當的選擇結晶體的厚度可以使得兩個νυν 48 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 564585 五、發明説明(46 波長之整個偏極化旋轉角度實質上不同。此等旋轉波之區 別可以藉由取決於偏極化之光學元件(例如雷射放電室 之Brewster窗口)而達成。(^匕材料之單价⑽以以窗口顯示 在P-偏極化與s-偏極化波之間之丨:〇17之傳送強度比。此 對於s-偏極化波之損失是由於在表面上的反射。因為此室 具有兩個窗口 ’此等值必須取其第四強度以產生1 : 〇 24 之正確的完整來回路程比。如果經由晶體之雙通過上之整 個偏極化旋轉角度是正好9〇度時,則達成此等線之一最適 區別。這將由對特徵四分之一波板之厚度調整晶體之厚度 而達成。然而,其他線之波長不應經過此種旋轉。事實上, 在此波長之所有偏極化旋轉應該是1 8〇度(半波板)之整數 倍,以致於辨別元件不影響此波之傳送。因此,此擴散對 折射晶體,偏極化元件(Brewster窗口),以及後鏡(用於光 線第二次經由晶體返回通過)之組合將波長之一壓制,而另 一波長保持不受影響。 此δ又计之優點是它本身的牢固、調整之容易、光學元 件之減少,以及對於小的(接近於零)入射角度在晶體上僅 使用抗反射塗層之可能性。 第16C1圖概要圖示具有腔内Lyot濾波器之線選擇式h 雷射系統。此共振器由以下所構成、高反射鏡丨丨6 A、雙折 射擴散晶體116B、(室)Btewster窗口 116C與116D以及輸出 耦合鏡116E(其為部份反射)。其光學增益是產生於室丨丨矸 中之氣體放電中。 第16C2圖顯示另—種設計,其使用一或數個其他的 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) -訂----- 564585 A7 ______B7_ 五、發明説明(47 )Lyot filter As shown in Fig. 16A, the other method of the 稜鏡 -based line selector is a Lyot filter. This filter uses, for example, birefringent diffusion of MgF2i anisotropic crystalline material, and rotates polarization-dependent polarization of light. By appropriately selecting the thickness of the crystals, two νυν 48 (please read the precautions on the back before filling in this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 The entire polarization rotation angle of 46 wavelengths is substantially different. The difference between these rotation waves can be achieved by optical components that depend on polarization (such as the Brewster window of a laser discharge cell). (Unit price of the material) ⑽The transmission intensity ratio between P-polarized and s-polarized waves is displayed in a window: 〇17. The loss of s-polarized waves is due to reflection on the surface. Because of this The chamber has two windows. This value must be taken at its fourth intensity to produce a correct complete round-trip ratio of 1: 〇24. If the entire polarization rotation angle on the pass through the crystal pair is exactly 90 degrees, Then one of the most appropriate differences of these lines is reached. This will be achieved by adjusting the thickness of the crystal to the thickness of the characteristic quarter wave plate. However, the wavelengths of other lines should not undergo such rotation. In fact, at this wavelength The polarization rotation should be an integral multiple of 180 degrees (half-wave plate), so that the discriminating element does not affect the transmission of this wave. Therefore, this diffusion affects the refractive crystal, the polarization element (Brewster window), and the rear The combination of a mirror (for the second time the light returns through the crystal) suppresses one of the wavelengths, while the other wavelength remains unaffected. The advantage of this delta is that it is firm, easy to adjust, and reduces optical components And the possibility of using only anti-reflection coatings on the crystal for small (near-zero) incident angles. Figure 16C1 outlines a line-selective h laser system with an intra-cavity Lyot filter. This resonator is made up of The following structure, high reflection mirror 6 A, birefringent diffusion crystal 116B, (chamber) Btewster windows 116C and 116D, and output coupling mirror 116E (which is partially reflective). Its optical gain is generated in the chamber 丨 丨 矸Figure 16C2 shows another design, which uses one or several other paper sizes that are applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the note on the back first And then fill out the entry page) - Order ----- 564585 A7 ______B7_ V. Description (47 invention)

Brewster元件116G以增加在p-與s-偏極化之間的區別。 第16C3圖顯示用於高反射鏡與晶體之另一實施例。事 實上,此兩個元件可以藉由將介電反射塗層116H直接塗在 晶體116B之背面上而組合,這將減少所須光學元件之數 量° 在M0後面的線選擇器 在第1圖中所顯示之實施例在主振盛器之下流提供線 選擇器’而在主振盪器之共振腔中沒有線選擇器。另外的 實施例可以將線選擇器包括在共振腔内例如是射室10八後 面。此線選擇器可以附加於或取代第16A之線選擇器。 當稜鏡線選擇器是使用於共振腔内時,更重要的是將 經選擇之偏極化中之光學損失最小化。此種線選擇器較佳 的設計包括五個CaF或MgF稜鏡,其方向為光線以Brewster 角度(大約57.3。)進入與離開此稜鏡。這允許使用沒有抗反 射塗層之稜鏡。在丨6圖中顯示圖式其顯示此線選擇之方 法。此配置包括五個稜鏡118A其具有頂角等於2X (90〇-ΘΒ) ’而㊀BSBrewster’s角度。此反射光學裝置118B是 半稜鏡在其後面具有最大反射塗層118C。 在此處新的特性是藉由使用Brewster’s角(對於適當偏 極化的雷射提供零反射係數)並且將反射塗層直接置於此 光學装置之後表面上,而避免在入射面上須要抗反射塗層。 稜鏡輪出耦合器 此被設計作為振盡器之氣體放電雷射之輸出麵合恭 典型地是部份反射鏡,其通常為楔形光學元件具有一表面 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 50 !…:::"、'# ------·::.......----- (請先閲讀背面之注意事項再填寫本頁) 、τ· 564585 A7 ---—_— B7__ 五、發明説明(48 ) 松越光線路徑且被塗層以反射光線所期望的一部份並透射 其餘部份。此另一表面經常塗以抗反射塗層且對於光線路 徑朝橫向以外之角度,以致於從此表面之任何反射不會回 到增益區域。 當使用於高強度之UV應用中,此塗層表面經常產生使 用哥命的問題。在第17圖中顯示一解決方案。在此情形中 輪出耦合器120是稜鏡的形狀,其前表面(最靠近增益區域) 疋定向於最低的損失角度(對P-偏極化),而第二表面是垂 直於折射的雷射光線以提供用放大之反射光線。此種設計 去除了對於AR塗層之須要且由於光線之擴散亦提供額外 的光譜分離。對於此F2應用,稜鏡是由CaF2構成其具有32 7 度之頂角與57.2度之入射角。在此較佳實施例中,在第二 表面上沒有塗層且大約4.7%之菲仕蘭(Fresnel)反射提供用 於主振盪器足夠的反射。 光學元件之光線轉向 儘管努力在光線路徑中維持恆定的情況,但如同以上 所說明許多雷射作業例如是突發模式作業會產生瞬間情 況,其在某些情況中造成輸出雷射光線重大的瞬間轉向。 此光線之瞬間轉向可以以主動光線方向控制系統修正,其 包括光線方向監視器與光線方向控制機構。在較佳實施例 中,此光線方向監視器是分部偵測器,並為人所知為bi_cell 偵測器或分段偵測器。此種形式的偵測器具有由小間隙所 分隔之兩個個別光學敏感元件。此兩元件之輸出比例是光 線方向之量測。此光線方向控制機構可以是樞軸鏡,較佳 51 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 五、發明説明(49 是在第1圖中之線選擇裝置1GC中。替代式地,於第16A圖 中所示線選擇器單元中的稜鏡之一可以拖轴旋轉。如果在 選擇器單元t所㈣稜鏡是安裝於稜鏡板上,則此板本身 可以極軸旋轉。此產生樞軸旋轉之驅動器較佳是壓電驅動 口或可以是聲音線圈或步進式馬達驅動單元或任何其他類 ㈣㈣單元。此用於方向控制機構之控制較佳應包括處 理益,其被程式化而具有適當的回饋算法與其他的電子控 制以及轉體以允許操作人員調整光線之方向。 以清潔壓力作光線轉向抵償 如同以上所顯示,由於例如通常使用於雷射積體電路 微影術突發模式作業之作業會造成光線路徑中小量的光線 轉向。在光線方向中即使是非常小的改變是極為非所期望 的。如上所示,可以使用技術以消除光線轉向之原因。而 且,將光學元件例如稜鏡或鏡子樞軸轉動可以修正光線方 向中非所期望的改變。另外一種方法是藉由在光線路徑的 部份中控制清潔氣體壓力而修正非所期望光線方向之改 變。在較佳實施例中控制在線選擇裝置中之清潔壓力以抵 償光線方向之改變。本案申請人己決定用第16A圖中所示 之五稜鏡線選擇器。此對於五稜鏡結構之輸出光方向是關 於在大約1 atm範圍中之清潔氣體壓力而藉由以下之係 數:Δφ=15毫徑/atm。此光線方向較佳如以上討論由分部 偵測器監視,且回饋信號藉由控制清潔氣流閥而調整在 LSP中之壓力。另外的方法是使用溫度感測器以提供回饋 信號。 -52 訂 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7Brewster element 116G to increase the difference between p- and s-polarization. Figure 16C3 shows another embodiment for a high-reflection mirror and crystal. In fact, the two elements can be combined by applying a dielectric reflective coating 116H directly on the back of the crystal 116B, which will reduce the number of required optical elements. The line selector behind M0 is shown in Figure 1 The illustrated embodiment provides a line selector 'under the main oscillator and no line selector in the resonant cavity of the main oscillator. In another embodiment, the line selector may be included in the resonance cavity, for example, the rear of the shooting chamber 108. This line selector can be added to or replace the 16A line selector. When the chirped line selector is used in a resonant cavity, it is more important to minimize the optical loss in the selected polarization. The preferred design of this line selector consists of five CaF or MgF 稜鏡, the direction of which is to enter and leave the light at a Brewster angle (about 57.3 °). This allows the use of radon without anti-reflective coating. The diagram shown in Figure 6 shows how this line is selected. This configuration includes five 稜鏡 118A which have a vertex angle equal to 2X (90 ° -ΘΒ) 'and ㊀BSBrewster's angle. This reflective optical device 118B is a half-thickness having a maximum reflective coating 118C behind it. The new feature here is to avoid the need for anti-reflection on the incident surface by using Brewster's angle (providing zero reflection coefficient for appropriately polarized lasers) and placing the reflective coating directly on the rear surface of this optical device coating.稜鏡 Wheel out coupler This is designed as the output surface of the gas discharge laser of the exhaustor. It is typically a partial mirror, which is usually a wedge-shaped optical element with a surface. A4 specifications (210X297 mm) 50!… ::: ",'# ------ · :: .......----- (Please read the precautions on the back before filling in this Page), τ · 564585 A7 -----_— B7__ 5. Description of the invention (48) The light path is loosened and is coated to reflect the desired part of the light and transmit the rest. This other surface is often coated with an anti-reflection coating and angles out of the lateral direction for the optical path diameter so that any reflection from this surface does not return to the gain region. When used in high-intensity UV applications, this coating surface often causes problems with usage. A solution is shown in Figure 17. In this case, the wheel-out coupler 120 is in the shape of 稜鏡, whose front surface (closest to the gain region) 疋 is oriented at the lowest loss angle (for P-polarized polarization), and the second surface is a thunder perpendicular to the refraction. Rays of light are provided to provide reflected light with magnification. This design eliminates the need for AR coatings and provides additional spectral separation due to light diffusion. For this F2 application, 稜鏡 is composed of CaF2 with an apex angle of 32 7 degrees and an incident angle of 57.2 degrees. In this preferred embodiment, there is no coating on the second surface and a Fresnel reflection of about 4.7% provides sufficient reflection for the main oscillator. Although the optical element's light steering strives to maintain a constant condition in the light path, as explained above, many laser operations such as burst mode operations can cause transient conditions, which in some cases cause a momentary moment when the output laser light is significant. Turn. This momentary turning of light can be corrected by an active light direction control system, which includes a light direction monitor and a light direction control mechanism. In a preferred embodiment, the light direction monitor is a partial detector and is known as a bi-cell detector or a segment detector. This type of detector has two individual optically sensitive elements separated by a small gap. The output ratio of these two components is measured in the direction of the light. This light direction control mechanism can be a pivot lens, preferably 51 (Please read the precautions on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 564585 5. Description of the invention ( 49 is in the line selection device 1GC in Fig. 1. Alternatively, one of the 稜鏡 in the line selector unit shown in Fig. 16A can be rotated by dragging the axis. It is mounted on a cymbal plate, so the plate itself can rotate with a polar axis. The driver that generates the pivot is preferably a piezo drive port or can be a voice coil or a stepper motor drive unit or any other type of cymbal unit. The control for the directional control mechanism should preferably include processing benefits, which are programmed with appropriate feedback algorithms and other electronic controls and swivel to allow the operator to adjust the direction of the light. The light steering with cleaning pressure is compensated as above It is shown that due to, for example, operations commonly used in laser integrated circuit lithography burst mode operations, a small amount of light in the light path can be diverted. In the light direction Even very small changes are extremely undesirable. As shown above, techniques can be used to eliminate the cause of light turning. Also, pivoting optical elements such as chirps or mirrors can correct undesired changes in light direction Another method is to correct the undesired light direction change by controlling the pressure of the cleaning gas in the part of the light path. In a preferred embodiment, the cleaning pressure in the online selection device is controlled to compensate for the change in light direction. This case The applicant has decided to use the five-line selector shown in Figure 16A. The output light direction for the five-line structure is about the pressure of the clean gas in the range of about 1 atm by the following coefficient: Δφ = 15 millimeters Diameter / atm. This light direction is preferably monitored by the branch detector as discussed above, and the feedback signal adjusts the pressure in the LSP by controlling the clean air flow valve. Another method is to use a temperature sensor to provide the feedback signal . -52 The size of the paper used in this edition applies to the Chinese National Standard (CNS) A4 (210X297 mm) 564585 A7

564585 A7 B7 五、發明説明(51 ) 置C設有球體與孔槽其限制圍繞A-B軸之旋轉。 雷射室 4仟赫兹之操作 較佳實施例被設計在每秒4000脈衝之脈衝重覆率操 作。在脈衝之間清除此經放電影響氣體之放電區須要在電 極18A與20A之間之氣流到達大約67 m/s。為達此速率,此 正切扇之直徑被設定在5英吋(葉片結構之長度長26英 吋),且旋轉速率被增加至大約每分鐘3500轉。為達此表現 此實施例使用兩個馬達其共同產生一直至大約4kw之驅動 功率至此風扇片結構。在4000Hz之脈衝率,此放電將增加 大約12kw(仟瓦)之熱能給雷射氣體。為了去除由放電所產 生以及風扇所加之熱而設有四個個別的水冷式散熱片熱交 換單元58A。以下詳細說明此馬達與熱交換器。 本發明較佳實施例使用通常於第4圖中所示之四個散 熱片水冷式熱交換器58A。各此等熱交換器是有些類似於 第1圖58處所示之單一熱交換器,然而具有實質上之改進。 熱交換器元件 在第21圖中顯示熱交換器之橫截面圖式。此熱交換器 之中間截面被切掉但顯示其兩終端。第21A圖顯示熱交換 器終端之放大圖其適應熱膨脹與收縮。 此熱交換器的元件包括散熱片結構302,其由固體銅 (CU 11000)以機器製成並且每英吋包括12個散熱片3030水 流是經過具有0.33英吋孔直徑之軸向通道,位於通道中之 塑膠擾流器306防止在通道中水形成層,並且防止在通道内 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 54 ----------蘑…: (請先閲讀背面之注意事項再填寫本頁) 訂· …線- 564585 A7 B7 五、發明説明(52 ) 表面上形成熱邊界層。撓性突緣單元304是經焊接之單元而 由内突緣304A、鼓風機304B以及外突緣304C所構成。此熱 交換器單元包括三個c-封閉308而將熱交換器中之水流從 雷射氣體封閉。鼓風機304B允許熱交換器對於室之膨脹與 收縮。雙瑋螺帽400將熱交換器通道連接至標準5/16英吋定 位肘管設備,其本身被連接至水源。0-環402提供螺帽400 與散熱片結構302之間之密封。在此實施例中,在兩個單元 中冷流的方向是與另兩個單元之冷流方向相反而將軸向溫 度梯度最小化。 擾流器 在較佳之實施例中,此擾流器是由四個現成的,長久 在線上的混合元件所構成,其典型地被使用於混合環氧樹 脂成份並且可由3M公司(靜態混合器,料號:06-01229-00) 購得。此線上混合器是顯示於第21與21A圖中之306外。此 線上混合器強迫水沿著通常螺旋路徑,其大約每間距離(其 為0.3英吋)將其順時針方向反轉。此擾流器實質上改善此 熱交換器之表現。由本案申請人所作之測試顯示添加此擾 流器可以降低所須之水流大約因數5以維持可比較之氣體 溫度條件。 氣流路徑與聲音效應 在此實施例中,氣體之流入與流出放電區是對於習知 技術之雷射室而言大幅地改善。此放電與接近交流扇出口 之上游區成形以形成而從放電之大橫截面至小橫截面之平 穩之轉換。在此氣體被強迫轉90°而進入熱交換器中之前, 55 ----------_:· (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 ----—------ B7 __ 五、發明説明(53 ) ' '"— -- 此放電之直接下游區域之横截面對於小的放電值平穩地增 加至更大的值。此配置將在快速步驟中由高速氣流所造成 之壓力降與有關之擾動最小化。在此離開雷射的方向中提 供平穩逐漸擴張之氣流路徑亦降低不良之聲音效應,此效 應是在下一個脈衝時由脈衝反射回放電區之音波所造成。 用於降低此效應之技術是於美國專利案號6,212,221與 6,317,447中說明,而此兩者在此處均併入作為參考。此音 波返回放電區所須之時間有相當程度地取決於。此由特殊 表面所反射之結果只有在重覆率與氣體溫度特殊之組合才 會成問題。如果此反射表面無法容易地去除,則另一個方 去了以疋避免在有問題之溫度重覆速率的組合下操作。一 個解決方案是將此雷射控制器程式化以自動地改變所須之 氣體溫度以避免在有問題的組合下操作。 鼓風機馬達與大的鼓風機 本發明之第一較佳實施例提供一種由雙馬達驅動之 大型切向風扇。此於第24圖中所示之較佳配置提供在電極 之間67 m/sec之氣流,其足以在4,〇〇〇 Hz脈衝之間清除在放 電區中大約1.7公分之空間。 在苐4圖中之64A顯示此風扇葉片結構之橫截面。於第 18 A圖中顯示其透視圖。其葉片結構具有5英吋直徑,並且 由固體鉛合金6061-T6棒原料以機器製成。各區段中個別葉 片是與相鄰區段稍微偏移如於第18八圖中所示。此偏移較 佳被使仔不均勻以避免任何壓力波前產生。作為替代的方 式’此4個別片可以對葉片軸稍微的成角度(再度為了避免 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 56564585 A7 B7 V. Description of the invention (51) C is provided with a sphere and a hole slot to restrict rotation around the A-B axis. Laser Chamber 4 Hz Operation The preferred embodiment is designed to operate at a pulse repetition rate of 4000 pulses per second. Clearing this discharge-affected gas discharge zone between pulses requires an airflow between electrodes 18A and 20A to reach approximately 67 m / s. To achieve this rate, the diameter of the tangent fan is set to 5 inches (the blade structure is 26 inches long), and the rotation rate is increased to about 3500 revolutions per minute. In order to achieve this performance, this embodiment uses two motors which together generate a driving power up to about 4kw to this fan blade structure. At a pulse rate of 4000Hz, this discharge will add about 12kw (仟 W) of thermal energy to the laser gas. In order to remove the heat generated by the discharge and the heat applied by the fan, four individual water-cooled heat sink heat exchange units 58A are provided. The motor and heat exchanger will be described in detail below. The preferred embodiment of the present invention uses four heat sink water-cooled heat exchangers 58A shown generally in FIG. Each of these heat exchangers is somewhat similar to the single heat exchanger shown in Fig. 58 but has substantial improvements. Heat exchanger element A cross-sectional view of the heat exchanger is shown in Figure 21. The middle section of this heat exchanger is cut away but shows both ends. Figure 21A shows an enlarged view of a heat exchanger terminal that adapts to thermal expansion and contraction. The elements of this heat exchanger include a heat sink structure 302, which is machine made of solid copper (CU 11000) and includes 12 heat sinks per inch. 3030 Water flows through an axial channel with a hole diameter of 0.33 inches. The plastic spoiler 306 in the channel prevents water from forming a layer in the channel, and prevents the paper size in the channel from applying the Chinese National Standard (CNS) A4 specification (210X297 mm) 54 ---------- mushroom ... : (Please read the precautions on the back before filling out this page) Order ·… line-564585 A7 B7 V. Description of the invention (52) A thermal boundary layer is formed on the surface. The flexible flange unit 304 is a welded unit and is composed of an inner flange 304A, a blower 304B, and an outer flange 304C. The heat exchanger unit includes three c-closures 308 to seal the water flow in the heat exchanger from the laser gas. The blower 304B allows the heat exchanger to expand and contract the chamber. The Sunwell nut 400 connects the heat exchanger channel to a standard 5/16 inch positioning elbow device, which itself is connected to a water source. The 0-ring 402 provides a seal between the nut 400 and the heat sink structure 302. In this embodiment, the direction of the cold flow in the two units is opposite to the direction of the cold flow in the other two units to minimize the axial temperature gradient. Spoiler In a preferred embodiment, the spoiler is composed of four off-the-shelf, long-term on-line mixing elements, which are typically used to mix epoxy components and can be used by 3M Corporation (static mixer, (Part No .: 06-01229-00). This online mixer is shown outside 306 in Figures 21 and 21A. The on-line mixer forces water along a generally spiral path that reverses it clockwise about every distance (which is 0.3 inches). The spoiler substantially improves the performance of the heat exchanger. Tests performed by the applicant in this case have shown that adding this spoiler can reduce the required water flow by a factor of about 5 to maintain comparable gas temperature conditions. Airflow path and sound effect In this embodiment, the inflow and outflow of gas into the discharge zone is greatly improved for the laser chamber of the conventional technology. This discharge is formed with the upstream region near the exit of the AC fan to form a stable transition from a large cross section to a small cross section of the discharge. Before this gas is forced to turn 90 ° and enter the heat exchanger, 55 ----------_: · (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS) A4 specification (210X297 mm) 564585 A7 ------------ B7 __ V. Description of the invention (53) '' "--The cross section of the direct downstream area of this discharge is small The discharge value increases smoothly to a larger value. This configuration minimizes the pressure drop and associated perturbations caused by high-speed airflow in quick steps. Providing a smooth and gradually expanding airflow path in the direction away from the laser also reduces the undesirable sound effect, which is caused by the sound wave reflected by the pulse back to the discharge area at the next pulse. Techniques for reducing this effect are described in U.S. Patent Nos. 6,212,221 and 6,317,447, both of which are incorporated herein by reference. The time required for this sound wave to return to the discharge zone depends to a considerable extent. The result of this reflection from a particular surface is only problematic if the combination of repetition rate and gas temperature is special. If this reflective surface cannot be easily removed, the other approach is to avoid operation at a combination of problematic temperature repeat rates. One solution is to program this laser controller to automatically change the required gas temperature to avoid operating in problematic combinations. Blower motor and large blower The first preferred embodiment of the present invention provides a large tangential fan driven by a dual motor. The preferred configuration shown in Figure 24 provides an air flow of 67 m / sec between the electrodes, which is sufficient to clear a space of approximately 1.7 cm in the discharge area between 4,000 Hz pulses. 64A in Fig. 4 shows a cross section of this fan blade structure. The perspective view is shown in Figure 18A. Its blade structure has a diameter of 5 inches and is machine-made from a solid lead alloy 6061-T6 rod material. Individual blades in each section are slightly offset from adjacent sections as shown in Figures 18 and 8. This offset is better made uneven to avoid any pressure wave front. As an alternative, these 4 individual pieces can slightly angle the blade axis (again to avoid this paper size applying the Chinese National Standard (CNS) A4 specification (210X297 mm) 56

(請先閲讀背面之注意事項再填寫本頁) 訂— 564585 A7 _____B7_ 五、發明説明(54 ) 壓力波前的產生)。此等葉片前具有銳利的前部邊緣,以減 少從面向放電區葉片邊緣之聲音反射。 此於第18圖中所示之實施例使用兩個三相無刷dc馬 達各具有包含於金屬壓力杯中之磁轉子,此轉子將馬達之 疋子部伤與雷射氣體環境分離如同在美國專利案號 4,950,840中所說明者。在此實施例中,此壓力杯是薄壁鎳 合金400,0.016英吋厚其作用為雷射氣體阻隔。兩個馬達 530與532驅動相同的軸且被程式化而在相反的方向旋轉。 此兩個馬達為無感測器馬達(即,它們未設位置感測器而操 作)’右馬達控制器534控制右馬達530,其作用為主控制器 經由類比與數位信號控制從動馬達控制器536以進行開始/ 停止,電流命令,電流回饋等。與雷射控制器24A之通信 疋經由RS-232串聯埠口而進入主控制器534中。 清潔系統 本發明之第一實施例包括一極為純淨之N2清除系 統,其提供大幅改進之表現且實質上增加元件之使用壽命。 第19圖為方塊圖其顯示本發明第一較佳實施例之重 要特點。此在本系統實施例中被氮氣清潔之五個受激準分 子田射件疋· LNP 2P,安裝於雷射室6p上之高壓元件 4P,連接高壓元件4p與上游脈衝功率元件1〇p之高壓電纜 8p輸出轉合器12p與波長計14p。各元件办,外,,吻 與14P各包括於密封的容器或室中,各只具有兩個璋口:一 個乂輸入埠口與一個^輸出蜂口。一個〜源咐其在積體 電路製核典型地是大型乂桶(典型地保持在液態氮的溫 Λ4^ -Π7-- (請先閲讀背面之注意事項再填寫本頁)(Please read the precautions on the back before filling this page) Order — 564585 A7 _____B7_ V. Description of the invention (54) Generation of pressure wavefront). These blades have sharp front edges in front of them to reduce sound reflections from the blade edges facing the discharge zone. The embodiment shown in FIG. 18 uses two three-phase brushless dc motors each with a magnetic rotor contained in a metal pressure cup. This rotor separates the wound of the motor from the laser gas environment as in the United States Illustrated in Patent No. 4,950,840. In this embodiment, the pressure cup is a thin-walled nickel alloy 400, 0.016 inches thick, which acts as a laser gas barrier. The two motors 530 and 532 drive the same shaft and are stylized to rotate in opposite directions. These two motors are sensorless motors (ie, they operate without a position sensor). The 'right motor controller 534 controls the right motor 530, and its role is to control the slave motor control via analog and digital signals through the master The device 536 performs start / stop, current command, current feedback, and the like. Communication with the laser controller 24A 进入 Enter the main controller 534 via the RS-232 serial port. Cleaning system A first embodiment of the present invention includes an extremely pure N2 removal system that provides significantly improved performance and substantially increases the useful life of the components. Fig. 19 is a block diagram showing important features of the first preferred embodiment of the present invention. In this embodiment of the system, the five excimer field shots cleaned by nitrogen L · LNP 2P, the high-voltage element 4P installed on the laser chamber 6p, connecting the high-voltage element 4p and the upstream pulsed power element 10p. The high-voltage cable 8p outputs the converter 12p and the wavelength meter 14p. Each component, outside, kiss and 14P are each contained in a sealed container or chamber, and each has only two ports: one port for input and one port for output. One ~ source tells them that the core of the integrated circuit is typically a large plutonium bucket (typically kept at the temperature of liquid nitrogen Λ4 ^ -Π7-- (Please read the precautions on the back before filling this page)

•、可I 564585 A7 B7 五、發明説明(55 ) 度),但可以是相當小瓶之N2。^氣體排出N2#16p,通過 進入N2清潔模組17p且經由N2過濾器18p至分配面板20p, 其包含氣流控制閥用於控制至被清潔元件之N2流。關於各 元件此清潔流被導回至模組17p而至氣流監視單元22p,在 此處監視由各清潔單元所返回之氣流,而如果此所被監視 之氣流是小於預先設定值則啟動(未圖示)警鈴。 第19圖A為線圖式其顯示此較佳實施例之特殊元件, 其包括與本發明之清潔特點並非特別有關之一些其他N2 特點。 N2過濾器 本發明之一重要特點為包括有N2過濾器18。在過去, 用於積體電路微影術之受激準分子雷射之製造商相信用於 N2清潔氣體之過濾器並不須要,因為在高場上可獲得沁之 N2氣體規格幾乎總是足夠的好,以致於符合規格之氣體是 足夠的乾淨。然而,本案申請人發現,有時候來源氣體可 能會與規格不符或者通往此清潔系統之N2管線可能包含 污染。此管線在維護或操作程序期間會被污染。 本案申請人已確定此過濾器的成本是非常良好之保 險以防止即使低的污染可能性所造成的損害。 一種較佳的N2過濾器是由Aeronex Inc.(其辦公室在 San Diego,California)可獲得之500K型惰性氣體淨化器。 此過濾器將N20,02,C0,co2,H2與非一甲烷碳氫化合 物去除至十億分之一以下之位準。它移除99.9999999之所 有0.003微米或更大之粒子。 58 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 B7 五、發明説明(56 ) 氣流監視器 對於各此五個清潔元件設有在單元22中之氣流監視 器。此為商場上可獲得之單元而對低氣流設有警鈴特性。 配管 所有的配管較佳是由不銹鋼(316SST)所構成而具有電 子拋光之内部。亦可使用由PFA 400或超高純度鐵弗龍 (Teflon)所構成之塑膠配管。 再循環與清潔 如第19B圖中所示,清潔氣體之一部份或全部可以再 循環使用。在此情況中將鼓風器與水冷或熱交換器加入此 清潔模組。例如,來自光學光件之清潔流可以被再循環使 用且來自電性元件之清潔流會耗竭,或此合併流之一部份 會耗竭。因此,可以添加臭氧清潔元件由此被包圍的光線 路徑去除臭氧。這可以包括一種過濾器其由數種與〇3反應 之材料之一種所製成。 LSP之氦清潔 在較佳實施例中,線選擇裝置是以氦清潔,且光線路 徑之其餘部份是以氮清潔。氦具有較氫低很多的折射率, 因此在LNP中之熱效應以氦之使用而最小化。然而,氦車交 氮大約貴1000倍。並且,以氦將更困難藉由產生清潔壓力 以控制光線轉向。 改良之密封 用於包容光線路徑之較佳技術是於2001年11月14曰所 提出申請之美國專利申請案號No. 10/000,991中說明,其標 59 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 ------ - B7 _ 五、發明説明(57) '一" 題為“具有&良光線路徑之氣體放電雷射,,而於此併入作為 參考。第1卯卜2,3,4與5圖顯示容易密封之鼓風機密封”、', 其被使用以提供雷射模組之間之密封,但允許模組之快速 容易拆卸以允許模組之快速更換。 容易密封之鼓風機密封 本案申請人已發展出一種容易密封之鼓風機密封,其 在當於光線路徑中重新安裝雷射模組時,允許將光線路徑 快速密封至符合真空之㈣,本說明書讀者應注意,雖然 此密封所提供之光線路徑各密封部份之真空品質之密封, 但此路徑並非在真空中操作,而是典型地在稍微超過大氣 的壓力中操作。 快速被封疋非常重要的’因為有極大的須要此等模組 可在幾分鐘内更換。於第8A-E圖中顯示容易密封之鼓風機 密封之基本設計。此容易密封之鼓風機密封是四個部份之 密封。此四個部份是··(1)於第8A圖中所示之鼓風機部份 93A、(2)於第8A與8B圖中所示之凸緣部份93B、(3)於第8A 圖中所示之金屬c密封環93C,以及(4)於第8C圖中所示之第 一壓縮環夾93D。於第8E圖中顯示另一個第二壓縮環夾。 於第8D圖中顯示經組裝之易密封鼓風機。此兩個另外的金 屬c密封可以被使用將密封凸緣部份93B密封至第一雷射 部份93E,且將密封鼓風機部份93A密封至第二雷射部 93F。此等另外的密封是設置於槽1〇2與1〇4中。凸緣部份 93B是以螺栓經由抗下沈孔1〇6而對第一雷射部份密封,此 螺栓經由孔108而以方孔螺釘頭扳手擰緊。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 60 ;:…...........J-! (請先閲讀背面之注意事項再填寫本頁) 訂丨 564585 A7 B7 五、發明説明(58 ) 凸緣部份93B包括斜凸緣120。如於第8A圖中所示,此 凸緣具有20°之斜度。凸緣114亦具有20°斜度。壓縮夾39D 然後藉由將手指螺栓118旋開而開啟並置於斜的凸緣120與 114之周圍。壓縮夾93D具有鉸接部份122與螺栓部份124。 它具有斜的開有槽之内周圍其匹配凸緣114與120之形式。 此以螺栓118完全插入之孔之直徑是稍微小於相匹配之突 緣114與120之傾斜表面,以致於螺栓118被栓緊時此兩凸緣 被強迫在一起壓縮在它們之間之密封93C以產生符合真空 之密封。本案申請人確定較佳要有400磅之壓縮力以確保所 須之真空密封。這須要對第一壓縮環夾之螺栓118之柄施加 大約40英吋一磅之力矩。在此較佳實施例中此柄只有1英吋 長,因此大部份的技術人員須要一種快速扳手(或類似的工 具)以提供此40英吋一磅之力矩。如果設有兩英吋之柄,此 密封可以以手持力達成。當被彎曲之槓桿臂119被推至於抵 住於環周圍之位置中時,此於第8E圖中所示之第二壓縮環 夾強迫此兩個斜的突緣在一起。此夾是藉由將此臂由環周 圍旋轉出而打開,並且然後此環夾之兩半可以分開。本案 申請人估計此施加於槓桿臂119終端之40磅力造成在c密封 93C上大約400磅之壓縮力。此夾之設計是根據在商場上可 獲得而被知“拉引動作扳動式夾”。 此密封系統之重要優點為: (1) 產生此密封之時間並不重要(大約1至2分鐘)。 (2) 產生極佳之真空密封; (3) 避免在室與光學元件之間實質之振動耦合;以及 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 61 -----\-----·--.....----- (請先閲讀背面之注意事項再填寫本頁) ·、τ· 564585 五、發明説明(59 貴 ⑷相較於大部份其他真空密封技術而言,此密封並不 如同於第8A圖中所示,此密封是在凸緣部份规與 93A之間製成其具有金屬e密封9冗夾在此兩個部份之間而 使用如於第8D圖中所示屋縮環夾93D。此金屬密封安裝入 槽1〇中纟此等貝施例令此密封是被製得稍微擴圓形以裝 入圓形槽110中。此e密封環較長的直徑為1.946英时且較短 之直徑為1.84英吋。在橢圓形c密封環中之彈簧力產生力抵 住槽110之邊緣,其防止。密封環在組裝期間脫^。鼓風機 部份93A包括圓脊112其保護密封環93C防止在組裝期間當 其與部件93B抵住彼此滑動時被部件93B刮傷。 橫向清潔氣流 本案申請人經由以(在例如4000Hz之高重覆率,每個 脈衝光線數個宅焦耳(milH J〇ule)之F2雷射作實驗而發 現,由於光線與清潔氣體之交互作用,光線會受到瞬間之 擴散與偏向。本案申請人亦確定可以藉由產生橫越光線路 徑之清潔氣流而將此等效應最小化。本案申請人辨識出達 此目的之數個技術。在第19C1,19C2,19C3與19C4圖中 顯示四個此種技術。第19C1與19C2圖顯示在光學路徑中之 調整裝置其鼓勵此橫越之清潔流。第19C3圖顯示在清潔線 路中之風扇用於將清潔氣體重新循環,以及在第19C4圖中 此清潔流被清潔噴嘴導引橫越此光線路徑。 對準雷射 提供一受限制真空式清潔路徑使得雷射光學裝置對 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 五、發明説明(6〇 ) 準的問題變得複雜。在習知技術之系統中,此清潔路捏必 須被切斷以插入小型可見光對準雷射。在較佳實施例;, 一小型可見光雷射可以被包括作為光線路徑之永久部份, 匕在維修作業期間是非常有用。此對準雷射較佳是安裝於 高反射鏡1〇D後側上之氦氖雷射或小型二極體雷射;^反 射鏡對於此設計而言應由CaF板所構成其具有介電反射冷 層被設計用於反射157奈米紫外線光非常大的部份,但透^ 可見光非常大的部份。此對準雷射然後可被使用於對準經 由mo、pa以及光線延長器之整個光線路握,而未將此清 潔路徑切斷。(本案讀者應瞭解任何線選擇光學裝置會改^ 對準雷射的方向。可以將此線選擇光線裝置去除以對準此 系統之其餘部份,或可以考慮到此線選擇光學裝置而調整 此對準雷射光線之方向。) ° 真空品質光線路徑之優點 在此所說明之真空品質清潔系統代表受激準分子雷 射(尤其對於F2雷射)長期表現之主要改進。污染的問題在 基本上被去除,其造成元件使用壽命與光線品質實質上之 增進。此外,由於除了經由輸出埠口之外的洩漏均已消除 而可將氣流控制在所期望之值,其具有將乂須求量減少大 約50%之效果。 具有功率計之密閉開關單元 如第20, 20A與20B圖所示,此第一實施例包括密閉之 開關單元500其具有内設之功率計。以此重要之改進,此開 關口有兩個功能:第-,作為開關以阻隔雷射光線,以及 本紙張尺度朝巾關家鮮(哪)A4規格⑵0χ297公楚) ' --- 564585 A7 ' ^----—- _ B7 五、發明説明(61 ) 第二’當須要量測時作為完整之光線功率計用於監視光線 功率。 第20圖為頂視圖顯示開關單元之重要元件。這些是開 關器502,光線轉儲器5〇4以及功率計5〇6。在第2〇圖中之51〇 顯示具有開關器在關閉位置之雷射輸出光線之路徑。在512 顯示具有光線開啟之路徑。此光線終止元件5丨6之開關主動 表面是與光線射出此室之方向成45。,且當此開關器關閉 日守’光線被吸收於開關器表面中且反射至光線轉儲器5〇4。 此光線轉儲主動表面與開關器主動表面均鍍有鉻用於高度 吸收雷射光射。在此實施例中,光線終止元件5 16是安裝於 撓性彈黃鋼臂518上。如同於第20B圖中所示,此開關器是 藉由對線圈514施加電流而開啟,其將撓性臂5丨8與光線終 止元件516拉至線圈,而將光線終止元件516從雷射輸出去 線之路徑移開。此開關器藉由將流經線圈514之電流停止而 關閉,其允許永久磁鐵520將光線終止元件516與撓性臂518 拉回入關閉的位置中。在較佳實施例中此電流被小心地設 計而在開啟與關閉位置之間產生元件與臂之容易移轉。 如於第20與20A圖中所示,功率計506是以類似的方式 操作而將熱電式光偵測器置於雷射輸出光線之路徑中。在 此情形中,線圈520與磁鐵522將偵測單元524與其撓性臂 526從光線路徑拉入與拉出用於輸出功率量測。此功率計可 以以開啟的開關器以及以關閉之開關器操作。控制流至線 圈之電流與開關器而使單元524可以容易地從光線路徑送 入與送出。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 64 (請先閲讀背面之注意事項再填寫本頁) 、可— 564585• May be I 564585 A7 B7 V. Description of the invention (55 degrees), but it can be quite small N2. ^ The gas is discharged from N2 # 16p, passes through the N2 cleaning module 17p, and passes through the N2 filter 18p to the distribution panel 20p. It contains an airflow control valve for controlling the N2 flow to the element to be cleaned. With regard to each component, this clean flow is led back to the module 17p to the airflow monitoring unit 22p, where the airflow returned by each cleaning unit is monitored, and if the monitored airflow is less than a preset value, it is activated (not (Illustrated) Alarm bell. FIG. 19 is a line drawing showing the special elements of this preferred embodiment, which includes some other N2 features that are not particularly relevant to the cleaning features of the present invention. N2 filter An important feature of the present invention is the inclusion of an N2 filter 18. In the past, manufacturers of excimer lasers for integrated circuit lithography believed that filters for N2 clean gas were not necessary, because the Q2 N2 gas specification available at high fields was almost always sufficient So good that the gas that meets the specifications is clean enough. However, the applicant in this case found that sometimes the source gas may not meet specifications or the N2 pipeline leading to this cleaning system may contain contamination. This line can become contaminated during maintenance or operating procedures. The applicant of this case has determined that the cost of this filter is a very good insurance against damage caused by even a low probability of contamination. A preferred N2 filter is a 500K inert gas purifier available from Aeronex Inc. (its office is in San Diego, California). This filter removes N20,02, C0, co2, H2 and non-methane hydrocarbons to a level below 1 part per billion. It removes all particles of 0.003 microns or larger that are 99.9999999. 58 (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 564585 A7 B7 V. Description of the invention (56) Airflow monitor for each of these five The element is provided with an airflow monitor in the unit 22. This is a unit available in shopping malls with alarm features for low airflow. Piping All piping is preferably made of stainless steel (316SST) and has an electronically polished interior. Plastic pipes made of PFA 400 or ultra-high-purity Teflon can also be used. Recycling and cleaning As shown in Figure 19B, some or all of the cleaning gas can be reused. In this case, add a blower and water cooling or heat exchanger to the cleaning module. For example, the cleaning stream from the optical optics may be recycled and the cleaning stream from the electrical components may be depleted, or a portion of this combined stream may be depleted. Therefore, an ozone cleaning element can be added to remove ozone by the light path enclosed thereby. This may include a filter made of one of several materials that react with 03. Helium cleaning of LSP In a preferred embodiment, the line selection device is cleaned with helium, and the rest of the optical path diameter is cleaned with nitrogen. Helium has a much lower refractive index than hydrogen, so the thermal effect in LNP is minimized with the use of helium. However, helium is about 1,000 times more expensive than nitrogen. And, with helium, it will be more difficult to control the turning of light by generating cleaning pressure. The better technology of the improved seal for accommodating the light path is described in US Patent Application No. 10 / 000,991, filed on November 14, 2001, and marked 59 (please read the precautions on the back before filling (This page) This paper size is in accordance with China National Standard (CNS) A4 (210X297 mm) 564585 A7 -------B7 _ 5. Description of the invention (57) '一 " entitled "With & good light The path of the gas discharge laser is incorporated here as a reference. Figures 1, 3, 4, and 5 show the easy-to-seal blower seal ", ', which is used to provide the Sealed, but allows quick and easy removal of the module to allow quick replacement of the module. Easy-to-seal blower seal The applicant of this case has developed an easy-to-seal blower seal that allows the light path to be quickly sealed to meet the requirements of the vacuum when the laser module is reinstalled in the light path. Readers of this manual should pay attention Although the vacuum quality seal of each sealing part of the light path provided by this seal is not operated in a vacuum, it is typically operated in a pressure slightly exceeding the atmosphere. It is very important to be quickly sealed ’because there is a great need for these modules to be replaced within minutes. The basic design of the easy-to-seal blower seal is shown in Figures 8A-E. This easy-to-seal blower seal is a four-part seal. These four parts are ... (1) the blower part 93A shown in Figure 8A, (2) the flange part 93B shown in Figures 8A and 8B, and (3) shown in Figure 8A The metal c seal ring 93C shown in the figure, and (4) the first compression ring clip 93D shown in FIG. 8C. Another second compression ring clamp is shown in Figure 8E. The assembled easy-to-seal blower is shown in Figure 8D. These two additional metal c seals can be used to seal the seal flange portion 93B to the first laser portion 93E and the seal blower portion 93A to the second laser portion 93F. These additional seals are provided in the grooves 102 and 104. The flange portion 93B is sealed to the first laser portion by a bolt through the anti-sinking hole 106, and the bolt is tightened by a square-hole screw head wrench through the hole 108. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 60;: .............. J-! (Please read the precautions on the back before filling this page) Order 丨564585 A7 B7 V. Description of the Invention (58) The flange portion 93B includes an inclined flange 120. As shown in Figure 8A, this flange has a slope of 20 °. The flange 114 also has a 20 ° slope. The compression clip 39D is then opened by unscrewing the finger bolt 118 and placed around the inclined flanges 120 and 114. The compression clip 93D has a hinge portion 122 and a bolt portion 124. It has the form of mating flanges 114 and 120 around the angled slotted interior. The diameter of the hole where the bolt 118 is completely inserted is slightly smaller than the inclined surfaces of the matching flanges 114 and 120, so that when the bolt 118 is bolted, the two flanges are forced together to compress the seal 93C between them. Create a vacuum-tight seal. The applicant in this case determined that a compression force of 400 pounds is preferred to ensure the required vacuum seal. This requires applying a torque of about 40 inches per pound to the handle of the bolt 118 of the first compression ring clamp. In this preferred embodiment, the handle is only 1 inch long, so most technicians need a quick wrench (or similar tool) to provide the 40 inch one pound torque. If a two-inch handle is provided, this seal can be achieved by hand. When the bent lever arm 119 is pushed into a position around the ring, the second compression ring clamp shown in Fig. 8E forces the two oblique flanges together. The clip is opened by rotating the arm around the ring, and then the two halves of the ring clip can be separated. The applicant in this case estimated that this 40 pound force applied to the end of the lever arm 119 caused a compression force of about 400 pounds on the c-seal 93C. The design of this clip is known as a “pull-out toggle clip” based on what is available in the mall. The important advantages of this sealing system are: (1) The time it takes to produce this seal is not important (about 1 to 2 minutes). (2) Produce excellent vacuum seal; (3) Avoid substantial vibration coupling between the chamber and optical components; and this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 61 ----- \ ----- · --.....----- (Please read the notes on the back before filling out this page) ·· τ · 564585 V. Description of the invention (59 Compared with most In terms of other vacuum sealing technologies, this seal is not as shown in Figure 8A. This seal is made between the flange part gauge and 93A. It has a metal e seal. 9 is sandwiched between these two parts. The metal ring seal 93D is used as shown in Fig. 8D. The metal seal is installed in the groove 10. These shells are made to be slightly rounded to fit into the circular groove. 110. The longer diameter of this e-seal ring is 1.946 inches and the shorter diameter is 1.84 inches. The spring force in the elliptical c-seal ring bears against the edge of the groove 110, which prevents the seal ring. Detach during assembly. The blower section 93A includes a round ridge 112 and its protective sealing ring 93C prevents it from being scratched by the component 93B when it and the component 93B slide against each other during assembly. Lateral clean airflow The applicant of this case found through experiments with an F2 laser (at a high repetition rate of 4000 Hz, several milH Joules per pulse of light) that due to the interaction between light and clean gas The light will be diffused and deflected instantaneously. The applicant of this case has also determined that these effects can be minimized by generating a clean air flow across the path of the light. The applicant of this case identified several techniques to achieve this. In 19C1 Figures 19C2, 19C3, and 19C4 show four such techniques. Figures 19C1 and 19C2 show adjustment devices in the optical path that encourage this traversing clean flow. Figure 19C3 shows a fan in the cleaning circuit used to apply The cleaning gas is re-circulated and the cleaning stream is directed across the light path by the cleaning nozzle in Fig. 19C4. Aligning the laser provides a restricted vacuum cleaning path so that the laser optics applies the Chinese national standard for this paper size ( CNS) A4 specification (210X297 mm) 564585 5. The description of the standard of the invention (60) becomes complicated. In the system of the conventional technology, this clean road must be Is cut to insert a small visible light alignment laser. In the preferred embodiment, a small visible light laser can be included as a permanent part of the light path, which is very useful during maintenance operations. This alignment laser is more A helium-neon laser or a small diode laser installed on the rear side of the high-reflection mirror 10D is preferred; for this design, the mirror should be composed of a CaF plate, which has a dielectric reflective cold layer and is designed for Reflects a very large part of ultraviolet light at 157 nm, but transmits a very large part of visible light. This alignment laser can then be used to align the entire optical line through mo, pa and light extender, and This cleaning path was not cut off. (The reader of this case should understand that any line selection optics will change the direction of the laser. You can remove this line selection optics to align the rest of the system, or you can adjust this considering the line selection optics. Align with the direction of the laser light.) ° Advantages of the vacuum-quality light path The vacuum-quality cleaning system described here represents a major improvement in the long-term performance of excimer lasers, especially F2 lasers. The problem of contamination is basically eliminated, which results in a substantial increase in the component life and light quality. In addition, since the leakage except through the output port has been eliminated, the airflow can be controlled to a desired value, which has the effect of reducing the amount of demand by about 50%. Closed Switching Unit with Power Meter As shown in Figures 20, 20A and 20B, this first embodiment includes a closed switching unit 500 which has a built-in power meter. With this important improvement, this switch port has two functions: No.-as a switch to block the laser light, and the paper size is oriented toward the towel (4) A4 size (0 × 297). '--- 564585 A7' ^ ----—- _ B7 V. Description of the invention (61) Second 'When measurement is needed, it is used as a complete light power meter to monitor light power. Figure 20 is a top view showing the important components of the switch unit. These are the switch 502, the light dump 504 and the power meter 506. Figure 51 in Figure 20 shows the path of the laser output light with the switch in the off position. The path with light on is shown at 512. The active surface of the switch of the light terminating element 5 丨 6 is 45 with the direction in which the light exits the chamber. When the switch is turned off, the daylight 'light is absorbed in the surface of the switch and reflected to the light dump 504. Both the active surface of the light dump and the active surface of the switch are plated with chrome to highly absorb laser light. In this embodiment, the light terminating element 516 is mounted on the flexible elastic yellow steel arm 518. As shown in Figure 20B, the switch is opened by applying a current to the coil 514, which pulls the flexible arm 5 and 8 and the light terminating element 516 to the coil, and outputs the light terminating element 516 from the laser. The path to go away is removed. This switch is closed by stopping the current flowing through the coil 514, which allows the permanent magnet 520 to pull the light terminating element 516 and the flexible arm 518 back into the closed position. In the preferred embodiment, this current is carefully designed to cause easy movement of the components and arms between the open and closed positions. As shown in Figures 20 and 20A, the power meter 506 operates in a similar manner and places a pyroelectric photodetector in the path of the laser output light. In this case, the coil 520 and the magnet 522 pull the detection unit 524 and its flexible arm 526 in and out from the light path for output power measurement. This power meter can be operated with on and off switches. The current and switch to the coil are controlled so that the unit 524 can be easily sent in and out from the light path. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 64 (Please read the precautions on the back before filling this page), OK — 564585

五、發明説明(62 ) 具有大於Brewster角之室窗角之改良式偏極化 習知技術之視自經常是置於Brewster’s角,其造成大約 58%是在p-偏極化方向之偏極化方向之1〇〇%透射。在其他 習知技術設計中,此窗口是設置在大約45度,在此情形中, s-偏極化之透射稍微小於且p_偏極化是稍微大於以上之 值。對於F2雷射而言,在8與1)偏極化之間在增益區中有實 質之競爭。這是因為相較於習知技術KrF與ArF雷射,在匕 雷射之放電區域中有典型非常高之增益。此競爭是非所期 望的因為在大部份之應用中s_偏極化光沒有用處且典型地 作為非所欲之熱而損失。因此,有須要將在雷射中所產生 之S-偏極化之數量最小化。 一種可以相當容易地達成之較佳技術是將室窗口之 入射角增加成實質上大於Brewster,s角。例如,在Brewster,s 角對於157奈米F2光線大約looG/^ip-偏極化光透射以及大 約83%之s-偏極化光透射。如果將入射角增加至料。,則& 偏極化透射降低至大約99%,但只有76%之卜偏極化光透 射。因為在主振盪器中從增益區之輸出光線經由此各兩窗 口大約通過兩次(用於4次經過窗口且對於各窗口是兩表 面)。在輸出光線中兩個偏極化之比(假設64。之窗口角度) 為· 89% Ό.76Υ 099 偏極化消失比率=一_ 1 + 1 + 本案申請人以47。之窗口角測試,大約72〇/〇的光是p-偏V. Description of the Invention (62) The modified polarization technique with room window angles greater than the Brewster angle is often placed at the Brewster's angle, which causes about 58% of the polarization in the p-polarization direction 100% of the direction of transmission. In other conventional technical designs, this window is set at about 45 degrees. In this case, the transmission of the s-polarization is slightly smaller and the p-polarization is slightly larger than the above value. For F2 lasers, there is substantial competition in the gain region between 8 and 1) polarization. This is because, compared with the conventional technologies KrF and ArF lasers, there is typically a very high gain in the discharge area of the dagger laser. This competition is undesired because s-polarized light is useless in most applications and is typically lost as unwanted heat. Therefore, it is necessary to minimize the amount of S-polarization generated in the laser. A better technique that can be achieved fairly easily is to increase the angle of incidence of the chamber window to be substantially larger than the Brewster's angle. For example, in Brewster, the s-angle is approximately looG / ^ ip-polarized light transmission for 157 nm F2 rays and approximately 83% of s-polarized light transmission. If you increase the incident angle to the material. , Then the & polarized transmission is reduced to about 99%, but only 76% of the polarized light transmission. Because the output light from the gain region in the main oscillator passes through these two windows approximately two times (for 4 passes through the window and two surfaces for each window). The ratio of the two polarizations in the output light (assuming a window angle of 64.) is 89% Ό.76Υ 099 The polarization disappearance ratio = -1 + 1 + 47 for the applicant in this case. Window angle test, about 72〇 / 〇 light is p-biased

564585 A7 __ΒΊ_ 五、發明説明(63 ) 極化且28%是s偏極化。 藉由將窗口的角度改變至64%,並且在第1圖中高反射 鏡10D之前在64角增加另外的窗口,此在輸出光線中s-偏極 化之比例被降低至大約4%,且其餘96%的光為p-偏極化。 本發明可以作各種修正而沒有改變其範圍,熟習此項 技術之人士會暸解許多其他可能之變化。例如,如同於第5 圖中所示,此脈衝功率電路一直至脈衝變壓器56之輸出可 以是共同電路。此方法提供不穩定性進一步的減少如同於 美國專利申請案號09/848,043中所說明而其在此處併入作 為參考。本發明之第3B圖顯示至脈衝變壓器之輸入與輸出 為了讀者之方便在此包括作為第13圖。其他的熱交換設計 應是對於在此所顯示結構之明顯之修正。例如,所有的四 個單元可以被結合至單一單元。在熱交換器上使用更大的 風扇可以有重大優點以減少由於雷射突發式操作所產生氣 體溫度快速變化之影響。本案之讀者應暸解在非常高的脈 衝率在脈衝能量上之回饋控制並無必要足夠的快以使用剛 剛過去的脈衝而控制特定脈衝之脈衝能量。例如,可以提 供控制技術而對於特定脈衝之經量測之脈衝能量被使用控 制以下第二或第三脈衝。可以使用除在第1圖中所顯示以外 之許多其他佈局設計。例如,此等室可以被安裝成邊靠邊 在一起或在底部上與PA在一起。而且,可以藉由包括輸出 耦合器(例如部份反射鏡),此第二雷射單元可以被設計作 為從動振盪器,其他的改變是可能的。可以使用切向扇以 外的風扇。這可能須要較4KHz大許多的重覆率。此等風扇與 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -66 - (請先閲讀背面之注意事項再填寫本頁)564585 A7 __ΒΊ_ 5. Description of the invention (63) polarization and 28% is s-polarized. By changing the angle of the window to 64% and adding another window at the 64 angle before the high mirror 10D in Figure 1, the proportion of s-polarization in the output light is reduced to about 4%, and the rest 96% of the light is p-polarized. Various modifications can be made to the invention without changing its scope, and those skilled in the art will appreciate many other possible variations. For example, as shown in Fig. 5, the pulse power circuit up to the output of the pulse transformer 56 may be a common circuit. This method provides a further reduction in instability as described in U.S. Patent Application No. 09 / 848,043, which is incorporated herein by reference. Fig. 3B of the present invention shows the input and output to the pulse transformer. It is included as Fig. 13 for the convenience of the reader. Other heat exchange designs should be a significant modification of the structure shown here. For example, all four units can be combined into a single unit. The use of larger fans on heat exchangers can have significant advantages to reduce the effects of rapid changes in gas temperature due to sudden laser operation. Readers of this case should understand that feedback control on pulse energy at very high pulse rates is not necessarily fast enough to control the pulse energy of a specific pulse using the pulse just passed. For example, control technology can be provided and the measured pulse energy for a particular pulse can be used to control the following second or third pulse. Many layout designs other than those shown in Figure 1 can be used. For example, these chambers can be mounted side-to-side or with PA on the bottom. Moreover, by including an output coupler (such as a partial mirror), this second laser unit can be designed as a driven oscillator, and other changes are possible. Fans other than tangential fans can be used. This may require much greater repetition rates than 4KHz. These fans and this paper size are applicable to China National Standard (CNS) A4 specification (210X297 mm) -66-(Please read the precautions on the back before filling this page)

564585 A7 B7 五、發明説明(64 ) 熱交換器可以位於放電室之外。亦可以使用在美國專利申 清案09/837,035(在此處併入作為參考)中所說明之脈衝計 時技術。可以使用以上說明五稜鏡設計以外的線選擇技 術。例如,可以使用3,4或6個稜鏡並且應用以上所討論之 設計技術以選擇最強的線。可能想要準確地量測頻帶寬 度。這可以藉由使用具有較以上說明標準更小的自由頻级 範圍之標準而達成。其他所熟知的技術可以被調整用於準 確地量測頻帶寬度。因此,以上之揭示並無意用於限制, 且本發明之範圍應由所附之申請專利範圍與其合法之等门 物件決定。 (請先閲讀背面之注意事項再填寫本頁) •、^Ti 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 564585 A7 _B7 五、發明説明(65 ) 元件標號對照 2…室 12B…壓縮頭 4…雷射箱 13…脈衝放大模組 6…電源模組 14…波前工程盒 6B···高壓電源 15A…鏡子 8A…轉換器模組 15C…鏡子 10…主振盪器 15D…鏡子 10A…放電室 18···開關器模組 10B…壓縮頭 20···氣體控制模組 10C…線選擇裝置 22…水分配模組 11…垂直光學台 28···雷射控制模組 12…功率放大器 30…狀態燈 12A…放電室 …:Ί:;----------縳:… (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 68564585 A7 B7 5. Description of the Invention (64) The heat exchanger may be located outside the discharge chamber. The pulse timing technique described in U.S. Patent Application 09 / 837,035 (herein incorporated by reference) may also be used. You can use line selection techniques other than those described above. For example, 3, 4, or 6 cymbals can be used and the design techniques discussed above are used to select the strongest line. You may want to measure frequency bandwidth accurately. This can be achieved by using a standard with a smaller free frequency range than the one described above. Other well-known techniques can be adjusted to accurately measure the bandwidth. Therefore, the above disclosure is not intended to be limiting, and the scope of the present invention should be determined by the scope of the attached patent application and its legal equivalent. (Please read the precautions on the back before filling this page) •, ^ Ti This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A7 _B7 V. Description of the invention (65) Component label comparison 2 ... 12B ... Compression head 4 ... Laser box 13 ... Pulse amplification module 6 ... Power module 14 ... Wavefront engineering box 6B ... High voltage power supply 15A ... Mirror 8A ... Converter module 15C ... Mirror 10 ... Main oscillator 15D ... mirror 10A ... discharge chamber 18 ... switch module 10B ... compression head 20 ... gas control module 10C ... line selection device 22 ... water distribution module 11 ... vertical optical table 28 ... laser control module Group 12 ... Power amplifier 30 ... Status light 12A ... Discharge chamber ...: Ί:; ---------- Binding: ... (Please read the precautions on the back before filling this page) This paper size applies to China Standard (CNS) A4 Specification (210X297 Public Love) 68

Claims (1)

’、、申請專利範 圍 物0月汐’, Patent application scope 0 Yue Xi 10 15 20 種非常窄頻帶之兩室高重覆率6氣體放電雷射系 统’包括: Α)第一雷射單元,包括: D第一放電室,包括·· a) 第一雷射氣體, b) 第一對延伸分開之電極其界定第一放電區, 2) 第一風扇,當該雷射單元以每秒4〇〇〇個脈衝或更高 範圍中的重覆率操作時,在該第一放電區中產生該 第一雷射氣體之足夠速度,而在每一個脈衝之後在 下一個脈衝之前從該第一放電區實質上清除所有 因放電而產生之離子, 3) 第一熱交換系統,能從該第一雷射氣體移除至少 16kw之熱能, B) 線選擇單元,用於將經選擇第一線光譜以外之能量最 小化, C) 第二雷射單元,包括: 1) 第二放電室,包括: a) 第二雷射氣體, b) 第二對延伸分開之電極其界定第二放電區, 2) 第二風扇,當該雷射單元以每秒4〇〇〇個脈衝或更高 範圍中的重覆率操作時,在該第二放電區中產生該 第二雷射氣體之足夠速度,而在每一個脈衝之後在 下一個脈衝之前從該第二放電區實質上清除所有 因放電而產生之離子, 本紙張尺度適用中國國家標準(CNS) A4規格(210X:297公釐) 裝 訂 線 69 六、申請專利範圍 3)第-熱父換系統,能從該第二雷射氣體移除至少 16kw之熱能, D) 脈衝功率系統,其被設計以提供電性脈衝至該第一 對電極與該第二對電極,而足夠在大約每秒4000個脈 5 衝之脈衝率產生雷射脈衝其具有經準確控制之超過 大約5mJ之脈衝能量, E) 雷射光線量測與控制系統,用於量測由該兩室雷射系 統所產生雷射輸出脈衝之脈衝能量,並且在回饋控制 配置中控制該雷射輸出脈衝, 10 其特徵為, 使用來自該第-雷射單元之輸出雷射光線作為用於傳 種於該第二雷射單元之種子光線。 2·如申請專利範圍第丨項之雷射系統,其中 該第一雷射單元被設計作為主振盪器,以及該第二 15 雷射單元被設計作為功率放大器。 3·如申請專利範圍第2項之雷射系統,其中 該第一雷射氣體包括氟與氖。 4.如申請專利範圍第2項之雷射系統,其中 該第一雷射氣體包括氟與氦。 2〇 5·如申請專利範圍第2項之雷射系統,其中 該第一與第二雷射氣體包括氟以及由氖、氦或氖與 氦之混合物所構成組所選出之緩衝氣體。 6·如申請專利範圍第2項之雷射系統,其中 該功率放大器被設計用於光線單次通過第二放電 六、申請專利範圍 區 8882? ABCD10 15 20 types of two-chamber high-repetition 6-gas discharge laser systems with very narrow frequency bands' include: A) a first laser unit, including: D a first discharge chamber, including a) a first laser gas, b) a first pair of extended electrodes defining a first discharge zone, 2) a first fan, when the laser unit is operated at a repetition rate in the range of 4,000 pulses per second or higher, the Sufficient speed to generate the first laser gas in the first discharge zone, and substantially remove all ions generated by the discharge from the first discharge zone after each pulse before the next pulse, 3) the first heat exchange system Can remove at least 16kw of thermal energy from the first laser gas, B) a line selection unit for minimizing energy outside the selected first line spectrum, C) a second laser unit, including: 1) a Two discharge chambers, including: a) a second laser gas, b) a second pair of extended and separated electrodes defining a second discharge zone, 2) a second fan, when the laser unit emits 4,000 pulses per second When the repetition rate operation in the range of or higher is generated in the second discharge region, Sufficient speed of the second laser gas to substantially remove all ions generated by the discharge from the second discharge area after each pulse and before the next pulse, the paper size applies the Chinese National Standard (CNS) A4 specification (210X : 297 mm) gutter 69 VI. Patent application scope 3) The first-parent heat exchange system can remove at least 16kw of thermal energy from this second laser gas, D) Pulse power system, which is designed to provide electrical properties Pulse to the first pair of electrodes and the second pair of electrodes, enough to generate a laser pulse at a pulse rate of about 5 pulses per second of about 4000 pulses per second, which has an accurately controlled pulse energy of more than about 5 mJ, E) laser light A measurement and control system for measuring the pulse energy of the laser output pulse generated by the two-chamber laser system, and controlling the laser output pulse in a feedback control configuration, 10 is characterized by using the first- The output laser light of the laser unit is used as a seed light for seeding the second laser unit. 2. The laser system according to item 丨 of the patent application scope, wherein the first laser unit is designed as a main oscillator, and the second 15 laser unit is designed as a power amplifier. 3. The laser system according to item 2 of the patent application range, wherein the first laser gas includes fluorine and neon. 4. The laser system according to item 2 of the patent application scope, wherein the first laser gas includes fluorine and helium. 20.5. The laser system according to item 2 of the patent application range, wherein the first and second laser gases include fluorine and a buffer gas selected from the group consisting of neon, helium, or a mixture of neon and helium. 6. The laser system according to item 2 of the patent application scope, in which the power amplifier is designed for a single discharge of light through the second discharge. 6. Patent application area 8882? ABCD 〇 經濟部智慧財產局員工消費合作社印製 10 7.如申請專利範圍第2項之雷射系統,其中 該功率放大器被設計用於光線多次通過第二放電 〇 8·如申請專利範圍第2項之雷射系統,其中 该主振盪器包括光學元件其提供共振路徑其經由 該第一放電區兩次。 9·如申請專利範圍第2項之雷射系統,其中 该主振盪器包括光學元件其提供共振路徑其經由 該第一放電區兩次,並且其中該功率放大器包括光學元 件提供該光線多次通過第二電區。 10·如申請專利範圍第1項之雷射系統,更包括: 光學台用於支持該第一雷射單元之共振腔光學裝 置而與該第一放電室無關。 11. 如申請專利範圍第1〇項之雷射系統,其中: 該光學台通常5為11型且界定u型腔並且其中該第一 放電室是安裝於ϋ型腔内。 12. 如申請專利範圍第1項之雷射系統,更包括: 垂直安裝的光學台其具有安裝於該垂直光學台上 之第二放電室。 13·如申請專利範圍第1項之雷射系統,其中: 各該第一與第二雷射室界定氣流路徑,其具有在該 電極下游逐漸增加之橫截面,以允許恢復在放電區中所 發生’之靜態壓力降之大的百分比率。 家標準(CNS)A4規格 (210 X 297 公釐) 請 先 •閱 讀 背. 之 注 意 事 項 再 填 · 寫裝 頁 訂 線 2量 A8 B8 C8 --—__21 、申請專利範圍 Μ·如申請專利範圍第2項之雷射系統,其中, 忒第與第一室各包括在該放電區下游之風向計 結構,用於將該放電區下游之氣體速度正常化。 5·如申請專利範圍第1項之雷射系統,其中 。亥第風扇與该第二風扇各為切向風扇,且各包括 由兩個無刷DC馬達所驅動之軸。 16·如申請專利範圍第15項之雷射系統,其中 該馬達是水冷式馬達。 17·如申請專利範圍第15項之雷射系統,其中 各α亥馬達包括疋子且各该馬達包括一包含於壓力 杯中之磁性轉子,其將該定子與該雷射氣體分開。 18·如申請專利範圍第丨項之雷射系統,其中 "亥第一與第二風扇各為切向扇,各包括從該鉛原料 由機器製成之葉片結構。 19·如申請專利範圍第15項之雷射系統,其中 該葉片結構具有大約五英吋之外直徑。 20.如申請專利範圍第19項之雷射系統,其中 該葉片結構包括葉片元件其具有銳利的前面邊緣。 21·如申請專利範圍第15項之雷射系統,其中 其中該馬達是無感測器馬達且更包括:主馬達控制 态用於控制該等馬達之一,以及從動馬達控制器用於控 制其他馬達。 22.如申請專利範圍第15項之雷射系統,其中各該切向扇包 括葉片其與該軸形成角度。〇 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 7. The laser system of item 2 in the scope of patent application, in which the power amplifier is designed to pass light through the second discharge multiple times. The laser system of claim, wherein the main oscillator includes an optical element which provides a resonance path which passes through the first discharge region twice. 9. The laser system according to item 2 of the patent application scope, wherein the main oscillator includes an optical element which provides a resonance path which passes through the first discharge region twice, and wherein the power amplifier includes an optical element to provide the light to pass through multiple times Second electric zone. 10. The laser system according to item 1 of the scope of patent application, further comprising: an optical table for supporting a resonant cavity optical device of the first laser unit regardless of the first discharge chamber. 11. The laser system according to item 10 of the patent application scope, wherein: the optical table 5 is generally a type 11 and defines a u-shaped cavity, and wherein the first discharge chamber is installed in the ϋ cavity. 12. The laser system according to item 1 of the patent application scope further includes: a vertically mounted optical table having a second discharge chamber mounted on the vertical optical table. 13. The laser system according to item 1 of the scope of the patent application, wherein: each of the first and second laser chambers defines an airflow path, which has a gradually increasing cross section downstream of the electrode to allow recovery in the discharge zone. The percentage of large static pressure drops that occur. Home Standard (CNS) A4 specification (210 X 297 mm) Please read the back first. Fill in the notes and write the binding page 2 A8 B8 C8 ---__ 21 、 Applicable patent scope M · If applying for patent scope The laser system of item 2, wherein the first and first chambers each include a wind vane structure downstream of the discharge zone for normalizing the gas velocity downstream of the discharge zone. 5. If the laser system of the first scope of the patent application, where. The Heidi fan and the second fan are each a tangential fan, and each includes a shaft driven by two brushless DC motors. 16. The laser system of claim 15 in which the motor is a water-cooled motor. 17. The laser system according to item 15 of the scope of patent application, wherein each α-hai motor includes a mule and each of the motors includes a magnetic rotor contained in a pressure cup, which separates the stator from the laser gas. 18. The laser system according to the scope of the patent application, wherein the first and second fans are each a tangential fan, each of which includes a blade structure made of the lead raw material by a machine. 19. The laser system of claim 15 in which the blade structure has a diameter other than about five inches. 20. The laser system of claim 19, wherein the blade structure includes a blade element having a sharp front edge. 21. The laser system according to item 15 of the patent application scope, wherein the motor is a sensorless motor and further includes: a master motor control state for controlling one of the motors, and a slave motor controller for controlling the other motor. 22. The laser system according to item 15 of the patent application, wherein each of the tangential fans includes a blade forming an angle with the shaft. 、申請專利範圍 jlxj 23·如申請專利範圍第i項之雷射系統,复 /、甲各散熱片熱交 換系統是水冷式的。 24.如申請專利範圍第23項之雷射系統,其中 各熱交換系統包括至少四個各別的水冷式埶交換 1 〇 '、、 25·如申請專利範圍第23項之雷射系統,其中 各熱交換系統包括至少一熱交換器其具有管狀水 流通道,其中至少一擾流器是位於該通道中。 26·如申請專利範圍第25項之雷射系統,其中 各該四個熱交換器包括沒有擾流器之管狀水流通 道。 27·如申請專利範圍第1項之雷射系統,其中 該脈衝功率系統包括水冷式電性元件。 28·如申請專利範圍第27項之雷射系統,其中 · 至少該水冷式元件之一是在超過12,〇〇〇伏特之高 壓操作。 29·>申請專利範圍第28項之雷射系統,其中 該高壓是使用冷水流過之電感器而與地隔離。 30·如申請專利範圍第1項之雷射系統,其中 該脈衝功率系統包括:第一充電電容器庫與第一脈 衝壓縮電路用於提供電性脈衝至該第一對電極;以及第 二充電電容器庫與第二脈衝壓縮電路用於提供電性脈 衝至該第二對電極;以及共振充電系統用於將該第一與 * · ;* ·· 第二充電電容器庫並聯充電至經準確控制之電壓。 73 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 564585 A8 B8 C8 D8 92年/〇 只 /;?r: 申請專利範圍 ίο 15 20 31.如申請專利範圍第3〇項之雷射系統,其中 該共振充電系統包括去Q(De-Qing)電路。 32·如申請專利範圍第3〇項之雷射系統,其中 该共振充電糸統包括調降(bleed-down)電路。 33·如申請專利範圍第30項之雷射系統,其中 該共振充電系統包括去Q電路與調降電路。 34.如申請專利範圍第1項之雷射系統,其中 該脈衝功率系統包括充電系‘,其由至少三個配] 成並聯之電源所構成。 35·如申請專利範圍第1項之雷射系統,其中 該線選擇單元是位於該主振盪器之了游。 36.如申請專利範圍第35項之雷射系統,其中 該線選擇單元包括多個稜鏡。 37·如申請專利範圍第36項之雷射系統,其中: 該多個稜鏡是5個稜鏡。 38.如申請專利範圍第36項之雷射系統,其中: 該多個稜鏡配置成迴路以致於造成此來自第一f 射單元之雷射光線在進入第二雷射單元之前會轉36〇。 39·如申請專利範圍第1項之雷射系統,更包括: 可見光對準雷射。 40.如申請專利範圍第1項之雷射系統,其中: 該線選擇單元包括Lyot滤波器。 41·如申請專利範圍第1項之雷射系統,其中: 該第一放電室與第二放電室包括室窗其被設置另 本㈣尺度適用中 (請先閲讀背面之注意事項再填寫本頁) 訂· )()4585Scope of patent application jlxj 23 · If the laser system of item i of the scope of patent application is applied, the heat exchange system of the heat sinks of the complex / A is water-cooled. 24. The laser system according to item 23 of the patent application, wherein each heat exchange system includes at least four separate water-cooled plutonium exchanges 10 ′, 25. The laser system according to item 23 of the patent application, wherein Each heat exchange system includes at least one heat exchanger having a tubular water flow channel, wherein at least one spoiler is located in the channel. 26. The laser system of claim 25, wherein each of the four heat exchangers includes a tubular water flow channel without a spoiler. 27. The laser system according to item 1 of the patent application range, wherein the pulse power system includes a water-cooled electrical component. 28. The laser system of claim 27, in which at least one of the water-cooled elements is operated at a high voltage exceeding 12,000 volts. 29 > The laser system of claim 28, wherein the high voltage is isolated from the ground using an inductor through which cold water flows. 30. The laser system according to item 1 of the patent application range, wherein the pulse power system includes: a first charging capacitor bank and a first pulse compression circuit for providing an electrical pulse to the first pair of electrodes; and a second charging capacitor The bank and the second pulse compression circuit are used to provide electrical pulses to the second pair of electrodes; and the resonance charging system is used to charge the first and * ·; * · · second charging capacitor banks in parallel to an accurately controlled voltage . 73 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 564585 A8 B8 C8 D8 92 years / 0 only /;? R: scope of patent application 15 20 31. If the scope of patent application item 30 Laser system, wherein the resonance charging system includes a De-Qing circuit. 32. The laser system of claim 30, wherein the resonant charging system includes a bleed-down circuit. 33. The laser system of claim 30, wherein the resonant charging system includes a Q-removing circuit and a down-regulating circuit. 34. The laser system according to item 1 of the scope of patent application, wherein the pulse power system includes a charging system ′, which is composed of at least three power sources configured in parallel. 35. The laser system according to item 1 of the patent application range, wherein the line selection unit is located in the main oscillator. 36. The laser system of claim 35, wherein the line selection unit includes a plurality of thorium. 37. The laser system of claim 36 in the scope of patent application, wherein: the plurality of puppets are five puppets. 38. The laser system of claim 36 in the scope of patent application, wherein: the plurality of chirps are configured in a loop so that the laser light from the first f laser unit will turn 36 before entering the second laser unit. . 39. The laser system according to item 1 of the patent application scope further includes: visible light directed at the laser. 40. The laser system according to item 1 of the patent application scope, wherein: the line selection unit includes a Lyot filter. 41. If the laser system of the first scope of the patent application, where: the first discharge chamber and the second discharge chamber including the window, they are set in another standard (applicable to this page, please read the precautions on the back) ) Order ·) () 4585 ίο 15 20 位’使得雷射光在該窗口上之入射角均大於Brewster, 角。 42.如申請專利範圍第1項之雷射系統,更包括: 光線操縱裝置用於操縱在該第一雷射單元中所產 生之雷射光線。 43·如申請專利範圍第42項之雷射系統,其中 該操縱裝置包括裝置用於將光學元件樞軸旋轉。 44. 如申請專利範圍第42項之雷射系‘'其中 該光線操縱裝置包括裝置用於調整在該線選擇單 元中之壓力。 45. 如申請專利範圍第1項之雷射系統,其中 該雷射系統包括稜鏡輸出耦合器其部份地界定用 於該第-雷射單it之共振腔,該稜鏡輸_合器包括兩 表面,第一表面的方向是對於p-偏極化低的損失角,且 第二表面位於對來自該第一雷射單元之雷射光垂直正 交之位置。 46·如申請專利範圍第丨項之雷射系統,更包括: ,A)第一溫度監視器用於監視在該第一放電室中之 氣體溫度, B)第-氣體溫度控制系統,於此處氣體溫度控制系 統包括控制方法用於調整氣體溫度,以避免由反射聲波 所造成不良之聲音效應。 47·如申請專利範圍第丨項之雷射系統,更包括: A)第二溫度監視器用於監視在該第二放電室中之 尽紙张尺度適用中(CNS) Α4β (210X297^) - >------------袭------------------、可...............線 (請先閲讀背面之注意事項再填寫本頁) 564585 A8 B8 C8 D8 申請專利範圍 10 15 20 氣體溫度, Β)第二氣體溫度控制系統,於此處此氣體溫度控制 系統包括控制方法用於調整氣體溫度,以避免由反射聲 波所造成不良之聲音效應。 48.如申請專利範圍第1項之雷射系統,更包括氮過濾器。 49·如申請專利範圍第1項之雷射系統,更包括: 氮清潔系統其包括清潔模組,此模組包括氣流監視 器;該雷射亦包括清潔排氣管用於g送來自該雷射之清 潔廢氣。 50·如申請專利範圍第1項之雷射系統,更包括: 開關(shutter)單元其包括電性操作之開關器與功 率計’此單元可以以命令信號而定位於雷射輸出光線路 徑中。 51.如申請專利範圍第5〇項之雷射系統,更包括光線殼體系 統其包括: A) 至少一光線密封,該光線密封包括金屬鼓風機,以 及 B) 清潔裝置用於以清潔氣體清潔該光線殼體。 52·如申請專利範圍第51項之雷射系統,其中: 該光線包容裝置包括氣流導引裝置用於產生清潔 氣流’其橫越在該第二雷射單元中所產生之雷射光線。 53·如申請專利範圍第51項之雷射系統,其中: 該至少一光線密封被設計以允許容易更換該射室。 54_如申請專利範圍第51項之雷射系統,其中: '紙?ft尺度適用 中家標芈(CNS) Μ規格(2]0X297公轮) ,· . 〔裝..................-ΙΤ..................線 (請先閲讀背面之注意寧項再填寫本頁) Λ8 Λ8ίο 15 20 bits ′ makes the incident angle of the laser light on this window larger than the Brewster angle. 42. The laser system according to item 1 of the patent application scope, further comprising: a light manipulating device for manipulating a laser light generated in the first laser unit. 43. The laser system according to item 42 of the patent application range, wherein the manipulation device includes a device for pivoting the optical element. 44. The laser system according to item 42 of the patent application, wherein the light control device includes a device for adjusting the pressure in the line selection unit. 45. If the laser system of the scope of patent application item 1, wherein the laser system includes a chirp output coupler which partially defines a resonant cavity for the -laser single it, the coupling device It includes two surfaces. The direction of the first surface is a low loss angle for p-polarization, and the second surface is located perpendicular to the laser light from the first laser unit. 46. If the laser system in the scope of the patent application, it further includes: A) a first temperature monitor for monitoring the temperature of the gas in the first discharge chamber, B) a-gas temperature control system, here The gas temperature control system includes a control method for adjusting the gas temperature to avoid adverse sound effects caused by reflected sound waves. 47. The laser system according to item 丨 of the patent application scope further includes: A) a second temperature monitor for monitoring the paper size application (CNS) Α4β (210X297 ^) in the second discharge chamber-> ------------ Raid ------------------, but ......... line (Please read the precautions on the back before filling this page) 564585 A8 B8 C8 D8 Patent application scope 10 15 20 Gas temperature, B) Second gas temperature control system, here this gas temperature control system includes control methods for adjusting Gas temperature to avoid undesirable sound effects caused by reflected sound waves. 48. The laser system according to item 1 of the patent application scope further includes a nitrogen filter. 49. If the laser system of the first patent application scope, further includes: Nitrogen cleaning system which includes a cleaning module, this module includes a flow monitor; the laser also includes a cleaning exhaust pipe for g to send from the laser Clean exhaust gas. 50. The laser system of item 1 of the scope of patent application, further comprising: a switch unit including an electrically operated switch and a power meter 'This unit can be positioned in the laser output optical path diameter by a command signal. 51. The laser system of claim 50, further comprising a light housing system comprising: A) at least one light seal including a metal blower, and B) a cleaning device for cleaning the air with a cleaning gas Light shell. 52. The laser system according to item 51 of the patent application scope, wherein: the light-containing device includes an airflow guiding device for generating a clean airflow 'which traverses the laser light generated in the second laser unit. 53. The laser system of claim 51, wherein: the at least one light seal is designed to allow easy replacement of the shooting chamber. 54_ If the laser system of the scope of patent application No. 51, in which: 'paper? Ft standard applies to the Chinese standard 芈 (CNS) M specifications (2) 0X297 round), ... [install ... ...........- ΙΤ ........ line (please read the note on the back before filling this page) Λ8 Λ8 清潔裝置用於以清潔氣體清潔該隔離區。 59·如申請專利範圍第1項之雷射系統,其中: 該系統被設計稍微之修正而操作KrF雷射系統、 ArF雷射系統或f2雷射系統。 60.如申請專利範圍第1項之雷射系統,其中·· 實質上所有元件均包含於雷射殼體中,但該系統包 括實體上與此殼體分離之AC/DC模組。 本紙張尺度適用中國國家標準(CNS) A4規格(2Κ)Χ:297公釐) 77The cleaning device is used to clean the isolation area with a cleaning gas. 59. The laser system according to item 1 of the scope of the patent application, wherein: The system is designed to be slightly modified to operate a KrF laser system, an ArF laser system or an f2 laser system. 60. The laser system according to item 1 of the scope of the patent application, wherein substantially all components are contained in the laser case, but the system includes an AC / DC module physically separated from the case. This paper size is applicable to China National Standard (CNS) A4 (2K) ×: 297 mm. 77 61.如申請專利範圍第丨項之雷射系統,其中: 該脈衝功率系統包括主振盪器充電電容器庫與功 率放大器充電電容器庫以及共振充電器,其被設計用於 將此兩個充電電容器庫並聯充電。 5 62·如申請專利範圍第61項之雷射系統,其中該脈衝功率系 統包括電源,其被設計用於提供至少2〇〇〇V至該共振充 電器。 63. 如申請專利範圍第1項之雷射系統,更包括: W 氣體控制系統用於控制在該第一雷射氣體中ρ2濃 度,以控制主振盪器光線參數。 64. 如申请專利範圍第1項之雷射系統,更包括: 氣體控制系統用於控制在該第一雷射氣體中之雷 射氣體壓力,以控制主振盪器光線參數。 65·如申請專利範圍第2項之雷射系統,更包括: 15 , 放電計時控制器用於在該主振盪器中放電之後20 至60奈秒,觸發在該功率放大器中之放電。 66.如申請專利範圍第2項之雷射系統,更包括: 放電控制器被程式設計以在某些情況下造成放電 而如此的定時以避免任何重大之輸出脈衝能量。 2 0 67·如申請專利範圍第66項之雷射系統,其中: 該控制器在該某些情況下被程式設計而在某些情 況下造成該功率放大器之放電是在該主振盪器中放電 之前至少20奈秒時發生。 68·如申請專利範圍第1項之雷射系統,更包括: - _ 本紙張尺度適用中國國家標準(CMS) A4規格(210X297公釐) _ - 564585 ABCD 倏 见 7T、申請專利範圍 脈衝放大單元用於增加來自該雷射之輸出脈衝之 期間。 69.如申請專利範圍第68項之雷射系統,其中: 配置此脈衝放大單元以接收該輸出脈衝雷射光,且 至少以2之因數放大每秒之脈衝數目,以致於產生由較 大脈衝數目構成之單一放大輸出脈衝光線,而具有與雷 射輸出脈衝相較實質上減少的強度值,且脈衝放大單元 包括: (1) 第一分光器其配置以分離該輸出光線之一部份,此 1〇 經分離之部份界定一延遲部份,且此輸出光線界定 在該第一分光器之光線尺寸與角度擴散; (2) 第一延遲路徑是由該第一分光器開始與結束,該第 一延遲路徑包括至少兩個聚焦鏡,該等鏡被配置而 將該經延遲部份聚焦於該第一延遲路徑中之焦點,, 15 且將該延遲部份歸還給該第一分光器,其具有光線 尺寸與角度擴散等於或大約等於該第一分光器之輸 出光線之光線尺寸與角度擴散。 70·如申請專利範圍第69項之雷射系統,其中·· 該至少兩個聚焦鏡是球面鏡。 2〇 71·如申請專利範圍第69項之雷射系統,更包括: 弟二延遲路其至少包括兩個球面鏡。 72.如申請專利範圍第69項之雷射系統,其中: 該第一延遲路徑包括四個聚焦鏡。 73 ·如申請專利範圍第72項之雷射系統,更包括:61. The laser system according to the scope of the patent application, wherein: the pulse power system includes a main oscillator charging capacitor bank, a power amplifier charging capacitor bank, and a resonance charger, which are designed to use the two charging capacitor banks Charging in parallel. 5 62. The laser system of claim 61, wherein the pulsed power system includes a power source, which is designed to provide at least 2000V to the resonant charger. 63. The laser system according to item 1 of the patent application scope further includes: a W gas control system for controlling the ρ2 concentration in the first laser gas to control the light parameters of the main oscillator. 64. The laser system according to item 1 of the patent application scope further includes: a gas control system for controlling the pressure of the laser gas in the first laser gas to control the light parameters of the main oscillator. 65. The laser system according to item 2 of the patent application scope, further comprising: 15. The discharge timing controller is used to trigger the discharge in the power amplifier 20 to 60 nanoseconds after discharging in the main oscillator. 66. The laser system according to item 2 of the scope of patent application, further including: The discharge controller is programmed to cause a discharge in some cases and such timing avoids any significant output pulse energy. 2 0 67 · The laser system of item 66 of the patent application scope, wherein: the controller is programmed in some cases and the discharge of the power amplifier is caused in the main oscillator in some cases Occurs at least 20 nanoseconds before. 68 · If the laser system in the first scope of the patent application, it also includes:-_ This paper size is applicable to the Chinese National Standard (CMS) A4 specification (210X297 mm) _-564585 ABCD 倏 See 7T, Pulse amplification unit for patent scope Used to increase the period of the output pulse from the laser. 69. The laser system according to item 68 of the patent application scope, wherein: the pulse amplifying unit is configured to receive the output pulse laser light, and the number of pulses per second is amplified by a factor of at least 2, so that a larger number of pulses is generated The single amplified output pulse light has a substantially reduced intensity value compared with the laser output pulse, and the pulse amplification unit includes: (1) a first beam splitter configured to separate a part of the output light, and 10 The separated portion defines a delay portion, and the output light is defined by the light size and angular spread of the first beam splitter; (2) the first delay path is started and ended by the first beam splitter, the The first delay path includes at least two focusing mirrors, which are configured to focus the delayed portion to a focal point in the first delay path, 15 and return the delayed portion to the first beam splitter, It has a light size and angular spread equal to or approximately equal to the light size and angular spread of the output light of the first beam splitter. 70. The laser system of claim 69, wherein the at least two focusing lenses are spherical mirrors. 207. The laser system according to item 69 of the scope of patent application, further comprising: The second delay circuit includes at least two spherical mirrors. 72. The laser system of claim 69, wherein: the first delay path includes four focusing mirrors. 73 · If the laser system in the scope of patent application No. 72, including: 79 9>年々月/入日斤79 9 > Year / Month 申請專利範圍 由位於該第一延遲路徑中之第二 該第二延遲路徑。 4輯產生之 74·如申請專利範圍第69項之雷射系統,其中 裝 、該第一延遲路徑包括第二分光器且更包括第二延 遲路徑,此路徑包括至少_聚焦鏡,該等鏡被配置而 將該經延遲部份聚焦於該第—延遲路徑中之焦點,且將 錢遲部份歸還給該第—分光器,其具有光線尺寸與角 度擴散等於或大約等於該第一分光器之輪出光線^光 線尺寸與角度擴散。 75.如申請專利範圍第69項之雷射系統,其中 5又汁该第一分光器而使用未成功之内反射之光學 特性將雷射光導入於至少兩個方向中。 訂 76·如申請專利範圍第69項之雷射系統,其中 忒第一分光器是由兩個透明的光學元件所構成,各 元件具有平坦表面,該等光學元件被定位而以該等表面 彼此平行且分離小於200奈米(nm)。 線 77.如申請專利範圍第69項之雷射系統,其中 該第一分光器是未塗層之光學元件而與該輸出雷 射光線形成角度,以致於達成所期望之反射-透射比率。The scope of patent application consists of the second and the second delay path located in the first delay path. 74 of the fourth series, such as the laser system of the 69th scope of the patent application, in which the first delay path includes a second beam splitter and further includes a second delay path, this path includes at least a focusing lens Is configured to focus the delayed portion on the focal point of the first delay path, and return the money delayed portion to the first beam splitter, which has a light size and an angular spread equal to or approximately equal to the first beam splitter The light from the wheel ^ ray size and angle spread. 75. The laser system of claim 69, wherein 5 uses the first beam splitter and uses the optical characteristics of unsuccessful internal reflection to direct the laser light in at least two directions. Order 76. If the laser system of the scope of patent application number 69, the first beam splitter is composed of two transparent optical elements, each element has a flat surface, and these optical elements are positioned so that these surfaces are on each other Parallel and separated less than 200 nanometers (nm). Line 77. The laser system of claim 69, wherein the first beam splitter is an uncoated optical element and forms an angle with the output laser light so that a desired reflection-transmission ratio is achieved. 564585 V年/〇月/>修正 補无 10D 6B564585 V / O //> Fixed 10D 6B
TW91119533A 2001-08-29 2002-08-28 Line selected F2 two chamber laser system TW564585B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US09/970,503 US20020071468A1 (en) 1999-09-27 2001-10-03 Injection seeded F2 laser with pre-injection filter
US10/000,991 US6795474B2 (en) 2000-11-17 2001-11-14 Gas discharge laser with improved beam path
US10/006,913 US6535531B1 (en) 2001-11-29 2001-11-29 Gas discharge laser with pulse multiplier
US10/012,002 US6625191B2 (en) 1999-12-10 2001-11-30 Very narrow band, two chamber, high rep rate gas discharge laser system

Publications (1)

Publication Number Publication Date
TW564585B true TW564585B (en) 2003-12-01

Family

ID=34624025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91119533A TW564585B (en) 2001-08-29 2002-08-28 Line selected F2 two chamber laser system

Country Status (1)

Country Link
TW (1) TW564585B (en)

Similar Documents

Publication Publication Date Title
US7058107B2 (en) Line selected F2 two chamber laser system
US6798812B2 (en) Two chamber F2 laser system with F2 pressure based line selection
TW569508B (en) Very narrow band, two chamber, high rep rate gas discharge laser system
KR100850450B1 (en) Very narrow band, two chamber, high rep rate gas discharge laser system
JP2008294477A (en) Super narrow band, two-chamber, high repetition rate gas discharge laser system
JP2004526334A (en) 4KHz gas discharge laser system
JP2002043669A (en) 4 KHz GAS DISCHARGE LASER
US7016388B2 (en) Laser lithography light source with beam delivery
TW564585B (en) Line selected F2 two chamber laser system
RU2298271C2 (en) Line-selectable double-chamber f2 laser system
TW507408B (en) Very narrow band, two chamber, high rep rate gas discharge laser system
TW573389B (en) Six to ten KHz, or greater gas discharge laser system
TW541777B (en) Four kHz gas discharge laser system

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees