TW541777B - Four kHz gas discharge laser system - Google Patents

Four kHz gas discharge laser system Download PDF

Info

Publication number
TW541777B
TW541777B TW91109840A TW91109840A TW541777B TW 541777 B TW541777 B TW 541777B TW 91109840 A TW91109840 A TW 91109840A TW 91109840 A TW91109840 A TW 91109840A TW 541777 B TW541777 B TW 541777B
Authority
TW
Taiwan
Prior art keywords
laser
scope
patent application
pulse
gas
Prior art date
Application number
TW91109840A
Other languages
Chinese (zh)
Inventor
Christian J Wittak
William N Partlo
Richard L Sandstrom
Paul C Melcher
David M Johns
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/854,097 external-priority patent/US6757316B2/en
Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US10/029,319 external-priority patent/US6765946B2/en
Priority claimed from US10/000,991 external-priority patent/US6795474B2/en
Priority claimed from US10/012,002 external-priority patent/US6625191B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of TW541777B publication Critical patent/TW541777B/en

Links

Landscapes

  • Lasers (AREA)

Abstract

The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.

Description

541777 A7 ___B7_ _ 五、發明説明(1 ) 本發明為下列專利申請案之部分連續案:第 10/012,002號申請日2001年11月30日;第10/000,991號申請 曰2001年11月14日;第1〇/〇29,319號申請日2001年10月17 曰;第09/943,343號申請日2001年8月29日;第09/854,097 號申請日2001年5月11日;第〇9/837,150號申請日2001年4 月18曰;第09/834,840號申請日2001年4月13日;第 09/794,782號申請日2001年2月27日;第09/771,789號申請 曰2001年1月29日;第〇9/768,753號申請日2001年1月23 曰;第09/684,629號申請日2000年1〇月6日;第09/597,812 號申請曰2000年6月19曰及第09/473,852號申請曰1999年 12月27曰。本發明係有關氣體放電雷射,特別係有關高重 複率氣體放電雷射。 發明背景 電放電氣體雷射 電放電氣體雷射為眾所周知,自196〇年代雷射發明後 不久即為人所利用。二電極間高電壓放電激勵氣態增益介 貝=增证介質之共振腔允許光刺激放大,隨後由共振腔 中以雷射束形式提取出。多種此等電放電氣體雷射係以脈 衝模式操作。 準分子雷射 、準分子雷射束於特定類型電氣體放電雷射,至197〇年 代'葉以來即為已知。有關準分子雷射用於積體電路微影 術之祝明述於美國專利第5,〇23,m號,核發日1991年6月 曰’名稱「«準分子雷射」。此專利案讓射請人的雇 本紙張尺度適财_ (請先閲讀背面之注意事項再填寫本頁) •訂----- 541777 A7 B7 五、發明説明 2 體 案 及 為案以引用方式併入此處。,884專利案說明於準分子 ” '為種南重複率脈衝雷射。於第1及2圖顯示雷射1 〇之 主要7°件。(第1圖係對應,884專利案之第1圖,第2圖係對 應884專利案之第7圖)。放電22介於二長(長約23忖)電極18 =20間’間約5/8叶。類似前文所述,先前專利雷射之重 複率典型係於每㈣刚至2_脈衝之範圍。高重複率雷射 通常係以氣體循環“提供。前述雷射,係以具有約23扇 某48之長松鼠籠型風扇46達成。風扇耗結構比電極似 “長提供足夠循環,因此於脈衝操作速率,電極間放 電:擾孔體於兩次脈衝間由電極間清除。風扇46的主轴⑽ 如弟2續(為,884專利案之第9圖)所示由二滾珠軸承132支 持。雷射使用的氣體含氣,敦具有極高反應性。風扇轉子 «風扇主軸i 3 0的風扇轉子係由密封元件⑶密封於殼 _兀件丨2及U提供的相同環境“内部,如,8 弟9搁第45行說明;而馬達定子⑽係於密封元㈣外側, =馬達定子不受含氟氣體的腐蚀作用。但轴承132受到腔 至氣體腐钱作用,轴承使用 紅“A 便用的潤滑亦然。軸承的腐蝕以 軸承的潤滑污染氣體。 模組設計 準刀子雷射當用於積體電 ,^ Λ, ^ 电路破影術時,典型係於製造 線上以全年揲休方式工作, 姑士加V、隹 钱時間成本太高。因此理由 故,大4为準分子雷射組成 可在數分鐘時間㈣更換。6破組裝成為模組而通常 本紙張尺度適用中關家標準(CNS)A4^(210>^J7 (請先閲讀背面之注意事項再填寫本頁) •訂 · 541777 A7 —------- B7________ 五、發明説明(3 ) 線窄化 用於微影術之準分子雷射之輸出射束頻寬必須縮小至 一微微米的分量。此種「線窄化」典型係於形成雷射共振 腔背侧的線窄化模組(稱做「線窄化封裝體」或「LNp」) 達成。此種線窄化封裝體典型係由專用光學元件包括稜 鏡、鏡及光栅組成。隨著重複率的增高,藉線窄化模組維 持穩定性能構成重大挑戰。 脈衝功率 美國專利第5,023,884號所述該型電放電氣體雷射利 用電脈衝功率系統如第3圖所述來於二電極間產生放電。此 種先刖技藝系統中’直接電流電源供應器22充電稱做「充 電電谷裔」或「C〇」42的電容器排組至預定且經過控制的 電壓,稱做各脈衝的「充電電壓」。此種充電電壓幅度係於 約500至1000伏特範圍。於充電電容器已經被充電至預定電 壓後,固態開關46關閉,讓電能儲存於充電電容器極為快 速地環繞通過一系列包含電容器排組52、62及82以及電感 器48、54及64及電壓變壓器56之磁性壓縮電路,俾產生跨 電極約為16,000伏特範圍的極高電位,其產生可持續約5〇 奈秒的放電。 市面上出售的先前技藝系統,固態開關關閉與放電間 的時間約為5微秒;但充電電容器準確充電至預定電壓過去 需時約400微秒,此種速率對於低於約2,〇〇〇赫茲的脈衝重 複速率夠快速。但讀者須了解充電電容器的準確充電極為 重要,原因在於控制充電電容器之電壓位準乃雷射操作員 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 6 (請先閲讀背面之注意事項再填寫本頁) 訂丨 此 窄 授 用 541777 五、發明説明(4 於此種系統唯一對放電 ^ e ^ ^ ^貝除可行的控制,而放電電壓 又疋雷射脈衝能的主要決定因素。 熱交換器 用於積體電路微影術之先前 、人/、 <无月丨J技藝準分子雷射典型要求 々卻雷射氣體系統,該雷 孔體係糟放電加熱以及藉前文 讨論經由循環風扇輪入的泸旦 ]叛入的月匕里加熱。典型係使用水冷式帶 有散熱片之熱交換器進行,如筮 仃如第1圖之%所示。雷射重複率 的加倍或加倍以上操控雷射產生的熱量兩倍,主要原因在 於循環雷射氣體需要的電力係、隨著所需氣體速度的立方增 加。 射束品質之控制 當用作為積體電路微影術光源時,雷射束參數(亦即脈 衝能、波長及頻寬)典型係控制於極為緊密規格以内。如 要求脈衝對脈衝之脈衝能回收控制,以及略微緩慢的線 化輸出射束波長之回授控制。脈衝率加倍或以上要求回 控制系統操作遠更快速。 需要一種較佳雷射設計’用於脈衝氣體放電雷射 於以每秒約4,000脈衝範圍之重複率操作。 發明概述 本發明提供一種可於約4,000赫茲脈衝率以約5亳焦耳 或以上脈衝能產生高品質脈衝雷射束之準分子雷射系統 系統可配置成以KrF或帶有微小變化的ArF雷射操作。較佳 具體實施例中’系統係配置成於4000赫茲及6亳焦耳脈衝能 操作的KrF準分子雷射’特別設計用作為積體電路微影術 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 、可| 541777541777 A7 ___B7_ _ 5. Description of the invention (1) The present invention is part of the following patent applications: Application No. 10 / 012,002, November 30, 2001; Application No. 10 / 000,991, November 14, 2001 ; Application No. 10 / 〇29,319, October 17, 2001; Application No. 09 / 943,343, August 29, 2001; Application No. 09 / 854,097, May 11, 2001; No. 09/837 , Application No. 150, April 18, 2001; Application No. 09 / 834,840, April 13, 2001; Application No. 09 / 794,782, February 27, 2001; Application No. 09 / 771,789, January 1, 2001 June 29; Application No. 09 / 768,753, January 23, 2001; Application No. 09 / 684,629, October 6, 2000; Application No. 09 / 597,812, June 19, 2000, and 09 / 473,852 application date is December 27, 1999. The present invention relates to gas discharge lasers, and more particularly to high repetition rate gas discharge lasers. BACKGROUND OF THE INVENTION Electric discharge gas lasers Electric discharge gas lasers are well known and have been used shortly after the invention of lasers in the 1960s. The high-voltage discharge excitation gas-phase gain medium between the two electrodes The resonance cavity of the dielectric medium allows the optical stimulus to be amplified and subsequently extracted from the resonance cavity in the form of a laser beam. Many of these electrical discharge gas laser systems operate in pulse mode. Excimer lasers and excimer laser beams have been known for certain types of electric gas discharge lasers since the 1950s. The best wishes for the use of excimer lasers for integrated circuit lithography are described in U.S. Patent No. 5,023, m, issued on June 1991, under the name "« Excimer Laser ". This patent case allows the applicant's employment to be of suitable paper size _ (Please read the precautions on the back before filling out this page) • Order ----- 541777 A7 B7 V. Description of the Invention 2 Case and Reference Ways are incorporated here. The 884 patent case is explained in the excimer "'is the seed repetition rate pulse laser. Figures 1 and 2 show the main 7 ° of the laser 10. (The first figure corresponds to the first figure of the 884 patent case. (Figure 2 corresponds to Figure 7 of the 884 patent case). The discharge 22 is between the two long (about 23 忖) electrodes 18 = 20 'and about 5/8 leaves. Similar to the previous description, the previous patent laser The repetition rate is typically in the range of 2 to pulses per frame. High repetition rate lasers are usually provided in a gas cycle. The laser is achieved by a long squirrel-cage fan 46 having about 23 fans. The fan structure is longer than the electrode, providing enough cycles, so at the pulse operation rate, the discharge between the electrodes: the interference hole body is cleared between the electrodes between two pulses. The main axis of the fan 46 46 Rudi 2 continued (for the 884 patent case Figure 9) is supported by two ball bearings 132. The gas used in the laser contains gas and has a very high reactivity. The fan rotor «fan spindle i 3 0 is sealed in the casing by a sealing element ⑶ Parts 丨 2 and U provide the same environment "inside, for example, the 8th and 9th lines are described on the 45th line; and the motor stator is attached to the outside of the sealing element, which means that the motor stator is not corroded by the fluorine-containing gas. However, the bearing 132 is affected by the cavity to the gas, and the bearing uses red "A" for lubrication. The bearing corrosion is contaminated by the bearing's lubrication. The module design quasi-knife laser is used for integrated electricity, ^ Λ, ^ When circuit breaking is performed, it is typical to work on the manufacturing line to work year-round. The cost of adding V and saving money is too high. Therefore, the large 4 excimer laser composition can be used in a few minutes. Replace. 6 Break-up assembly into a module and usually this paper size applies the Zhongguanjia Standard (CNS) A4 ^ (210 > ^ J7 (Please read the precautions on the back before filling this page) • Order · 541777 A7 —--- ---- B7________ 5. Description of the Invention (3) Line Narrowing The output beam width of the excimer laser used for lithography must be reduced to a micron component. This "line narrowing" is typically based on This is achieved by forming a line narrowing module (called a "line narrowing package" or "LNp") on the back side of the laser cavity. This type of line narrowing package is typically composed of dedicated optical components including chirps, mirrors, and gratings Composition. As the repetition rate increases, the borrow narrowing module maintains stable performance This poses a major challenge. This type of electrical discharge gas laser described in U.S. Patent No. 5,023,884 uses an electric pulse power system to generate a discharge between two electrodes as shown in Fig. 3. In this prior art system, a 'direct current power supply' The charger 22 is called a "charging battery" or a "C0" 42 capacitor bank to a predetermined and controlled voltage, and is called the "charging voltage" of each pulse. This charging voltage range is about 500 to 1000 volt range. After the charging capacitor has been charged to a predetermined voltage, the solid-state switch 46 is turned off, allowing electrical energy to be stored in the charging capacitor very quickly around a series of capacitor banks 52, 62 and 82 and inductors 48, 54 and 64 The magnetic compression circuit of the voltage transformer 56 generates a very high potential in the range of approximately 16,000 volts across the electrodes, which generates a discharge that can last for about 50 nanoseconds. Prior art systems on the market, between solid-state switch closure and discharge The time is about 5 microseconds; but it takes about 400 microseconds to charge the capacitor accurately to the predetermined voltage. This rate is lower than about 2,000 Hz. The pulse repetition rate is fast enough. However, the reader must understand that the accurate charging of the charging capacitor is extremely important, because the voltage level of the charging capacitor is controlled by the laser operator. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ) 6 (Please read the notes on the back before filling out this page) Order this narrow grant 541777 V. Description of the invention (4 This system is the only control for discharging ^ e ^ ^ ^ except for the feasible control, and the discharge voltage决定 The main determinant of laser pulse energy. The heat exchanger used in integrated circuit lithography previously, human /, < monthless 丨 J technology excimer lasers typically require the laser gas system to be quenched, and the laser hole system Discharge heating and the heating of the rebel moon dagger, which was discussed in the previous article through the circulation fan rotation. Typically, this is done using a water-cooled heat exchanger with fins, as shown in Figure 1%. Doubling the laser repetition rate or more than doubling the heat generated by controlling the laser doubles, the main reason is that the power system required to circulate the laser gas increases with the cube of the required gas velocity. Control of Beam Quality When used as an integrated circuit lithography light source, the laser beam parameters (ie, pulse energy, wavelength, and bandwidth) are typically controlled within extremely tight specifications. For example, pulse-to-pulse pulse energy recovery control is required, and slightly slower linearized output beam wavelength feedback control is required. Doubling the pulse rate or more requires the control system to operate much faster. There is a need for a better laser design ' for pulsed gas discharge lasers to operate at a repetition rate in the range of about 4,000 pulses per second. SUMMARY OF THE INVENTION The present invention provides an excimer laser system capable of generating high-quality pulsed laser beams with a pulse rate of about 5 亳 joules or more at a pulse rate of about 4,000 Hz. The system can be configured to emit KrF or ArF lasers with small changes. operating. In the preferred embodiment, the system is a KrF excimer laser configured to operate at 4000 Hz and 6 亳 Joule pulses. It is specially designed for integrated circuit lithography. The paper size applies the Chinese National Standard (CNS) A4 specification. (210X297 mm) (Please read the notes on the back before filling out this page), OK | 541777

發明説明 2 4 8太半厂々 ^ , T 、 目)光源。帶有特殊軟體監視器之改良波長計 輸出射束參數, 且彳工制極為快速的PZT驅動微調鏡,以及 (請先閱讀背面之注意事項再填寫本頁} 控制回授配置 ^ 夏的脈衝功率充電電壓俾維持波長及脈衝能於 、—又以内。較佳具體實施例中,二風扇馬達驅動單一 切線風扇,复描彳妓 > ”捉1、足夠氣流,而於脈衝間之約0.25亳秒時 間由放電區清险# φ 一 放電许屑。經由改變氣體混合物、修改用 於193奈米(名目)操作之線窄化封裝體輸出耦合器及波長 口十且較好略微調整電極間距,系統可配置用作為ArF雷 射而系統無需做實質改變。兩種雷射配置系、統之全部部件 幾乎對兩種配置完全相同。 圖式之簡要說明 第1、2及2A圖顯示先前技藝雷射系統結構。 訂丨 第3圖為先前技藝脈衝功率系統之電路圖。 第4A圖顯示本發明之較佳具體實施例之前視圖。 第4B圖顯示較佳具體實施例之雷射腔室之截面。 第5圖顯示較佳脈衝功率系統之電路圖。 第6 A及6B圖顯示二較佳共振電源供應器。 第7、7A及8圖顯示冷卻脈衝功率組成元件之技術。 第9A及9B圖顯示可飽和電感器之視圖。 第10圖顯示功率變壓器。 第10 A圖顯示功率變壓器核心。 第11圖顯示冷卻第一可飽和電感器技術。 第12、12A及12B圖顯示冷卻第二可飽和電感器技術。 第13及13A(l)〜(8)圖顯示於較佳具體實施例腔室放電 本紙張尺度適用中國國家標準A4規格(210X297公釐) 541777 A7 B7 五、發明説明(6 區之視圖。 第14圖顯示較佳具體實施例之登出。 第14A、MB、14C及14D圖為說明波長及頻寬計算之 圖表及線圖。 第ME、UF、14G及14H圖顯示波長及頻寬監測用標 準具之視圖。 第15圖為方塊圖顯示用於波長及頻寬計算之組成元 件。 第16圖為方塊圖顯示用於控制雷射束波長及脈衝能之 雷射系統結構。 第16A、16B1及16B2圖為略圖顯示LNP微調鏡控制技 術。 構0 (請先閲讀背面之注意事項再填寫本頁) 、可| 弟16 C圖顯示微調鏡之壓電控制效應。 第16D及16E圖為略圖顯示波長控制演繹法則。 第17、17A、17B及17C圖顯示掃除光柵表面之技術。 第18圖顯示二馬達鼓風機控制系統。 第18A圖顯示鼓風機扇葉結構。 第、i9A及19B圖顯示較佳氮氣掃除系統結構。 第19C-19G圖顯示密封射束路徑之纟士構 第2〇、2〇 A及2〇B圖顯示較佳開閉器社構 第21及21A圖顯示較佳水冷式古地土 Λ有政熱片熱交換器結 術。 第22圖顯示用於較佳具體實施例之 特殊氮氣掃除技 本紙張尺度適用中國國家標準(CNS) A4規格(2〗〇X297公釐) 541777 五、發明説明(7 A7 B7 弟23 A-23T圖說明脈衝拉伸技術。 第24A、B及C圖說明另一脈衝拉伸技術。 較佳具體實施例之詳細說明 第一較佳具體實施例 以下說明本發明之第一較佳具體實施例。其為設計用 於以高達約4千赫茲脈衝率產生7·5亳焦耳窄帶約248奈米 (例如248.250奈米,248,250微微米)脈衝之氟化氪(KrF)準 分子雷射。此種雷射之規格包括頻寬規格範圍小於〇·5微微 米(FWHM頻寬)且小於h4微微米(95%積分頻寬)。規格也要 夂3 Σ波長女疋性小於〇. 〇 $微微米以及3 〇脈衝劑量安定性 小於〇·5亳焦耳。第4B圖為本較佳具體實施例之前視圖,門 已經被移開,且識別多種雷射組成元件。雷射為模組化單 兀,設計成整個模組可極為快速容易地更換俾維持雷射的 停機時間減至最低。第4B圖依順時針方向朗的各個組成 元件分別為: •狀態燈1K指示雷射操作狀態, •控制模組2K,基於來自手持終端裝置(圖甲未顯示)或 來自微影術機器的主控器之輸入控制信號,控制雷射功能, •麼縮頭模組3K其為雷射脈衝功率系統之部件,提供 彳If㈣最終階段’充電位於雷射腔室頂部的尖 峰電容器排組, •穩定模組4K也稱做波長計,其控制雷㈣衝以及提 供控制波長及脈衝能之回授信號, •自動開閉器模組5K附有功率計, 本紙張尺度適财關_準(CNS) A4規格(2歡297公嫠7 (請先閲讀背面之注意事項再填寫本頁)Description of the invention 2 4 8 Taihan factory (々, T, mesh) light source. Improved wavelength meter output beam parameters with special software monitor, and extremely fast PZT driven fine-tuning mirror, and (Please read the precautions on the back before filling this page} Control feedback configuration ^ Xia's pulse power The charging voltage 俾 maintains the wavelength and pulse energy within, and within. In a preferred embodiment, a two-fan motor drives a single all-line fan, recaptures the prostitute > "catching 1, sufficient airflow, and about 0.25 between pulses. Leap second time by discharge zone clear danger # φ A discharge chip. By changing the gas mixture, modifying the wire used for 193nm (namely) operation, narrowing the package output coupler and the wavelength port, and better slightly adjusting the electrode spacing The system can be configured to be used as an ArF laser without any substantial changes to the system. The two laser configuration systems and all components of the system are almost identical to the two configurations. Brief description of the drawings Figures 1, 2 and 2A show the prior art The structure of the laser system. Figure 3 shows the circuit diagram of the prior art pulse power system. Figure 4A shows a front view of a preferred embodiment of the present invention. Figure 4B shows a better tool. Section of the laser cavity of the embodiment. Figure 5 shows a circuit diagram of a preferred pulse power system. Figures 6 A and 6B show two preferred resonant power supplies. Figures 7, 7A and 8 show the cooling pulse power components. The technology. Figures 9A and 9B show views of saturable inductors. Figure 10 shows the power transformer. Figure 10 A shows the power transformer core. Figure 11 shows the cooling of the first saturable inductor technology. Figures 12, 12A and Figure 12B shows the cooling of the second saturable inductor technology. Figures 13 and 13A (l) ~ (8) show the chamber discharge in the preferred embodiment. The paper size applies the Chinese national standard A4 specification (210X297 mm) 541777 A7 B7 V. Description of the invention (view of area 6) Figure 14 shows the logout of the preferred embodiment. Figures 14A, MB, 14C and 14D are diagrams and line diagrams illustrating the calculation of wavelength and bandwidth. Pages ME, UF Figures 14G and 14H show a view of the wavelength and bandwidth monitoring etalon. Figure 15 is a block diagram showing the components used for wavelength and bandwidth calculations. Figure 16 is a block diagram showing the laser beam wavelength and Pulsed Laser System Structure. Figures 16A, 16B1, and 16B2 are schematic diagrams showing the LNP trimmer control technology. Structure 0 (Please read the precautions on the back before filling out this page), can | Brother 16C diagram shows the piezoelectric control effect of the trimmer. Figures 16D and 16E are schematic diagrams showing the principles of wavelength control deduction. Figures 17, 17A, 17B, and 17C show the technique of sweeping the surface of the grating. Figure 18 shows the two-motor blower control system. Figure 18A shows the structure of the fan blades. Figures 19B and 19B show the structure of a better nitrogen sweeping system. Figures 19C-19G show the seal beam path of the fighter structure. Figures 20, 20A, and 20B show the preferred shutter structure. Figures 21 and 21A show The preferred water-cooled ancient soil Λ has a hot plate heat exchanger. Figure 22 shows the special nitrogen sweeping technique used in the preferred embodiment. The paper size applies the Chinese National Standard (CNS) A4 specification (2) 0297 mm. 541777 V. Description of the invention (7 A7 B7 Brother 23 A-23T The drawings illustrate the pulse stretching technique. Figures 24A, B, and C illustrate another pulse stretching technique. Detailed Description of the Preferred Embodiment First Preferred Embodiment The following describes the first preferred embodiment of the present invention. It is a KrF excimer laser designed to generate a 7.5 Joule narrow band of approximately 248 nanometers (eg, 248.250 nanometers, 248,250 micrometers) at a pulse rate of up to about 4 kHz. This type of laser The radio specifications include a bandwidth specification range of less than 0.5 micron (FWHM bandwidth) and less than h4 micron (95% integrated bandwidth). The specification should also be 3 Σ wavelength feminine sex less than 0.05 micron and 30 pulse dose stability is less than 0.5 μjoule. Figure 4B is a front view of the preferred embodiment, the door has been removed, and a variety of laser components are identified. The laser is a modular unit, designed The entire module can be replaced very quickly and easily The laser downtime is kept to a minimum. Figure 4B shows the clockwise components of each component: • The status light 1K indicates the laser operating status, and • the control module 2K, based on the data from the handheld terminal device (Figure A Display) or the input control signal from the main controller of the lithography machine to control the laser function. • The shrink head module 3K is a part of the laser pulse power system and provides 彳 If㈣ the final stage 'charging is located in the laser cavity. The peak capacitor bank on the top of the room, • The stabilization module 4K is also called a wavelength meter, which controls the thunderbolt and provides a feedback signal that controls the wavelength and pulse energy. • The auto switch module 5K is equipped with a power meter. This paper Standards and Finances Standard_CNS A4 Specification (2 Huan 297 Gong 7) (Please read the precautions on the back before filling this page)

541777541777

、發明説明(8 • MFT電源供應器6K提供高電壓功率給位於雷射肸 室模組之金屬氟化物捕捉器(過濾器), 二 •左側鼓風機馬達7K, •雷射腔室模組8K, •界面模組9K提供界面電路來匹配雷射控制寒置遍 微影術機器控制裝置, 與 •冷卻供給模組10K, •冷卻水分布模組11K, •雷射氣體供應模組12K, •通風總成13K用於讓雷射室内氣體於外界大氣通風 且包括煙霧偵測器, •右側鼓風機馬達14K, •線窄化模組15K也稱做線窄化封裝體或lNP, •右侧鼓風機馬達控制器16K, •左側鼓風機馬達控制器17K, •整流器模組18K其含有Co充電電容器排組以及引發 電脈衝的電路,用以提供早期脈衝壓縮及脈衝電壓放大, •共振充電器模組19K用以提供Co充電電容器排組之 極為快速共振充電, •咼電壓電源供應器模組20K用於由標準市電之三相 交流電源產生高電壓直流電源, •交流/直流分配模組21K •氦氣掃除模組(圖中未顯示) •波長穩定模組(圖中未顯示) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 11 (請先閲讀背面之注意事項再填寫本頁jDescription of the invention (8 • MFT power supply 6K provides high voltage power to the metal fluoride trap (filter) located in the laser chamber module, two • left blower motor 7K, • laser chamber module 8K, • Interface module 9K provides interface circuit to match laser control cold lithography machine control device, and • Cooling supply module 10K, • Cooling water distribution module 11K, • Laser gas supply module 12K, • Ventilation The assembly 13K is used to ventilate the laser indoor gas to the outside atmosphere and includes a smoke detector. • The right blower motor 14K, • the line narrowing module 15K is also called the line narrowing package or lNP, • the right blower motor Controller 16K, • Left blower motor controller 17K, • Rectifier module 18K, which contains Co charging capacitor banks and circuits that trigger electrical pulses to provide early pulse compression and pulse voltage amplification. • For resonant charger module 19K In order to provide extremely fast resonant charging of Co charging capacitor banks, the 咼 voltage power supply module 20K is used to generate high voltage DC power from a three-phase AC power supply of standard mains , • AC / DC distribution module 21K • Helium sweep module (not shown in the figure) • Wavelength stabilization module (not shown in the figure) This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 11 (Please read the notes on the back before filling in this page j

541777 A7 _________B7 _ 五、發明説明--- (請先閲讀背面之注意事項再填寫本頁) 第4A圖為本發明之第一較佳具體實施例之雷射腔室 10A之剖面圖。雷射腔室主要組成元件為殼體結構元件pa 及14A於前置游離器管6〇上游的陰極18八及陽極2〇a,尖峰 電容器排組62及靜電捕捉器單元64(全部皆類似第i圖所示 先前技藝對應組成元件)。腔室包括新陽極支持件流線形結 構48、新上方流線形結構5〇、氣體旋轉輪葉52、新5吋直徑 切線型扇葉結構46A以及四個水冷式熱交換器單元58八。第 13圖顯示帶有新電流回路548之類似腔室配置。 第16圖為方塊圖顯示用於控制輸出設施波長及脈衝能 重要的雷射系統結構。 優於先前技藝氣體放電雷射之重大改良包括: 1) 循環腔室雷射氣體之流動路徑改良 2) 水冷式脈衝功率系統 3) 帶有快速控制演繹法則之超快波長計 4) 新穎高負載週期LNP帶有ΡΖΤ及步進器馬達組合驅 動微調鏡 5) 大型切線風扇帶有雙重水冷式無刷直流驅動鼓風機 馬達附有特殊控制器 6) 光學保護用之超純氮氣掃除系統 7) 附有功率計之密封開閉器 8) 改良熱交換器配置 9) 射東密封系統 l〇)LNP之氦氣掃除系統 11)附有平行氣流肋之電流回路 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -12 - 541777 A7 ^--____B7_ 五、發明說明(l〇 ) 12) 讓腔室阻抗最理想化之電感板 13) 性能壽命之電極最理想化。 雷射腔室 熱交換器 較佳具體實施例係設計成於4,000脈衝重複率操作。清 除兩次脈衝間放電影響氣體放電區,要求電極18八與2〇八 間之氣體流速高達約67米/秒。為了達成此種速度,切線風 扇單元直徑設定於5吋(扇葉結構長度為26吋),轉速升高至 勺3 500 rpm。為了達成此種性能,本具體實施例利用二馬 達其共同傳輸咼達約4千瓦的驅動功率給扇葉結構。於脈衝 率為4000赫茲,放電將增加約12千瓦熱能給雷射氣體。為 了移除放笔產生的熱量連同風扇增加的熱量,設置四個分 開水冷式有散熱片熱交換器單元58A。馬達及熱交換器細 節容後詳述。 本發明之較佳具體實施例利用第4A圖及第13圖概略 '員示之四°卩有放熱片水冷式熱交換器5 8 A。各熱交換器略 微類似第1圖顯示於58之單一熱交換器,但有實質改進。 熱交換器組成元件 熱父換之一之剖面圖顯示於第2 i圖。熱交換器之中 J面刀掉頭不其兩端。第2 1A圖顯示配合熱脹冷縮之 熱交換器放大端視圖。 熱又換為組成7C件包括一有散熱片結構3〇2,其係由固 體銅(CU 11咖)機製形成,每对含有吸熱片3 03。水流流 車向HI ^孔直徑〇 33忖。位於轴向通道的塑膠擾流 本紙張尺度適用中關家標準(哪)M規格(2Κ)χ297公爱) 13 (請先閲讀背面之注意事項再填寫本頁) 訂· :線-----*- 541777 A7 五、發明説明(η 器306可防止水流於通道形成層流,且防止於通道内側面上 形成熱邊界層。可撓性凸緣單元3〇4為内凸緣3〇4Α'伸縮 V 304Β及外凸緣304C組成的熔接單元。熱交換器單元包括 三個c自行封308而密封於熱交換器來自雷射氣體之水流。 伸縮帶304B讓熱交換器相對於腔室脹縮。雙槔口螺帽4〇〇 連結熱父換裔通道至標準5/16吋定位肘管配件,其又連結 至水源。Ο形環402提供螺帽4〇〇與散熱片結構3〇2間的密 封。 擾流器 較佳具體實施例中,擾流器係由四個現成購買的長形 同軸混合元件組成,該混合元件典型係用於混合環氧樹脂 組成分,且係得自3M公司(靜態混合機,部件編號 06-D1229-00)。線上混合劑顯示於第21及21八圖之3〇6。線 上混合劑強迫水沿概略螺旋路徑流動,其約略每個間隔距 離(0.3吋)逆轉其順時針方向。擾流器實質上改進熱交換器 性能。申請人試驗顯示加上擾流器可減少需要的水流達約5 因數,俾維持可比擬的氣體溫度條件。 流徑 較佳具體實施例中,氣流流進與流出放電區比先前技 蟄田射腔室大為改進。輪葉結構66設計成可規度化區域68 的乳體速度,規度化恰於扇葉結構下游區域68的氣體速度 ;、勺0米/心第13圖之具體實施例中,腔室頂部經切削而 提i、類似之水流成形表面。然後放電區之氣體流速加速至 叹计速度67米/秒。於放電區中心下游約4吋處,水流截面 (CNS) Α4^ (210X297^) (請先閲讀背面之注意事项再填窝本頁} 訂— …線- 541777 A7 —---- - B7_ 五、發明説明(η ) 係以20度角由約5/8吋增加至約4吋,隨後氣體藉四個片轉 動的輪葉52轉動。如此允許大量百分比的壓降經由放電區 回復。第13A(1)圖顯示之黥骨形電流回路548係由〇 〇15吋 厚度鎳合金(UNS N04400)藉雷射機製形成,彎曲成如第 13A(3)至13A(8)圖所示形狀,因此23肋對氣體流動的阻力 減至最低。各個肋之截面為〇〇15吋χ〇〇9〇吋,縱向方向係 平行於氣體流動方向。 鼓風機馬達及大型鼓風機 本發明之第一較佳具體實施例提供循環雷射氣體用之 藉雙重馬達驅動的大型切線風扇。第18圖所示較佳配置提 供電極間氣體流速67米/秒,該氣體流速足夠於4,〇〇〇赫茲 脈衝間清除放電區約1 ·7厘米空間。 風扇之扇葉結構以剖面圖顯示於第4Α圖之64Α。透視 圖顯示於第18Α圖。扇葉結構直徑5吋,係由固體鋁合金 6061-Τ6棒形備料切削製成。各輪葉之各截面略由毗鄰截面 偏位,如第18Α圖所示俾減少輪葉造成放電區的壓力擾 動。較好個別輪葉之前緣製成刀刃之錐形,因而減少操作 期間放電聲波由扇葉前緣反射。 第18圖所示具體實施例利用兩部3相無刷直流馬達,各 自有磁性轉子容納於金屬壓力杯,如美國專利案第 4,950,840號所述,壓力被可隔開馬達之定子部分與雷射氣 體環境。本具體實施例中,壓力杯為薄壁鎳合金4〇〇,厚度 0.016吋,其係作為雷射氣體屏障。二馬達53〇及幻2驅動同 -根軸且經程式規劃於反向旋轉。二馬達為無感應器馬達 本紙張尺度適用中國國家標準(CNS) Α4規格(2】〇><297公釐) 15 (請先閲讀背面之注意事項再填寫本頁) 、可 · 發明説明(13) (換言之,其操動不含位置感應器)。控制右馬達53〇之右馬 達控制器534係作為主控器,透過類比及數位信號控制賓馬 達控制為53 6而指示開始/停止、電流指令、電流回授等。 與田射控制器24A之通訊係透過進入主控器5342Rs_232 串列璋為之。 水冷式脈衝功率系統 四千赫茲脈衝功率系統 根據本發明之雷射系統之操作需要精確控制於約 12,0〇〇伏特至3〇,〇〇〇伏特範圍之電位以⑽赫茲(亦即間 =時間約250微秒)施加於電極間。如背景乙節指示,於先 月J技*脈衝功率系統,充電電容器排組被充電至精確預定 &制電壓’經由關閉固態開關產生放電,讓儲存於充電電 合為的忐ϊ環繞通過壓縮_放大電路而產生跨電極之預定 電位@關關閉至放電完成間的時間只有數微秒(亦即約5 U心)仁先岫技藝之充電電容器充電要求時間間隔遠比 250U#更長。經由使用大型電源供應器或若干電源供應器 並料縮短充電時間。例如中請人使用三部先前技藝電源 供應器並聯排列而以4,〇〇〇赫茲操作。 本較佳具體實施例中,如第5圖所示,申請人利用如第 3圖所不先讀#相同基本設計詩固態關下游脈衝功 率系統部分,但申請人利用不同技術來充電C〇。 共振充電 …申月人利用兩型共振充電系統來極為快速充電C。。此 等系統係參照第6A及6B圖說明。 541777 A7 ~~--—-^_ 五、發明説明(I4 ) 第一共振充電器 顯示本較佳共振充電之電路顯示於第6八圖。本例中, 使用208 VAC/90 amp輸入以及800 VDC 5〇 amp輸出之標準 直*電源供應恭200。電源供應器為可由6〇〇伏特調整至8⑼ 伏特之直流電源供應器。電源供應器係直接附著於d,可 免除電壓回授至電源供應器的需求。當電源供應器被致動 時,電源供應器啟動並於C-1電容器調節恆定電壓。系統性 月匕略與c-1的電壓調節獨立無關,因此於電源供應器只需要 最基本的控制回路。其次,當c-i的電壓降至低於電壓設定 值日守’供應态將增加能量至系統。如此於雷射脈衝啟動間 的全部時間(甚至雷射脈衝的持續時間)電源供應器可補充 由C-1移轉至c0的能量。如此進一步降低電源供應器尖峰電 流超過先前技藝脈衝功率系統的需求。要求電源供應器有 最基本的控制回路,以及將電源供應器之尖峰額定電流降 至系統的平均功率要求的組合可降低電源供應器成本約 5 0 /〇 °此外’此種較佳設計讓製造的廠商有彈性,由於个亙 定電流之固定輸出電壓電源供應器方便由多個來源供應商 取得。此種電源供應器可得自涯格(Elgar)、幽尼佛徹逆 (Universal Voltronics)、凱塞(Kaiser)及EMI等供應商。 控制板 本電源供應器連續充電1033 pF電容器202至控制板 204要求的電壓。控制板2〇4也命令IGBT開關206的開閉來 由電容器202移轉能量至電容器42。電感器208結合電容器 202及42將傳輸時間設定為常數,且限制尖峰充電電流。控 本紙張尺度適用中國國家標準() A4規格(210X297公楚) -17 - (請先閲讀背面之注意事項再填寫本頁) .訂- :線丨 541777 A7 ______B7 五、發明説明(15 ) 制板204接收電壓回授212,該電壓回授係與電容器“的電 壓成比例、以及接受電流回授214,電流回授係與流經電感 為208之電流成比例。由此二回授信號,若開關2〇6 於該時間瞬間開啟,則控制板204可即時計算電容器42的終 電壓值。因此以指令電壓210饋入控制板2〇4,可於電容器 42及電感器208内部對儲存能量作精確計算俾與要求的充 電包壓指令2 1 0做比對。由此計算,控制板2〇4將決定於充 電週期中開啟IGBT開關206正確時間。 系統準確度 於IGBT開關206開啟後,儲存於電感器2〇8之磁場能量 將通過幾約束的二極體路徑215移轉至電容器42。即時能量 計算的準確度將決定存在於電容器42最終電壓之起伏波動 抖動量。由於本系統之極端充電率,可能存在有過多抖動 來滿足±0.05%之預定系統調節需求。如此可利用額外電路 例如迪厅' (de-qing)電路或沒下電路,容後詳述。 第二共振充電器 第二共振充電器系統顯示於第6B圖。本電路類似第6A 圖所示。主要電路元件為: II-帶有恆定直流電流輸出之三相電源供應器3〇〇。 C-1 -來源電容器3〇2,其比現有Cq電容器42高一次冪幅 度或以上。 Q1、Q2及Q3-控制電流流動用以充電及維持c〇之調節 電壓的開關。541777 A7 _________B7 _ 5. Description of the invention-(Please read the notes on the back before filling out this page) Figure 4A is a cross-sectional view of the laser cavity 10A of the first preferred embodiment of the present invention. The main components of the laser chamber are the housing structural elements pa and 14A, the cathode 18a and anode 20a upstream of the front dissipator tube 60, the spike capacitor bank 62 and the electrostatic trap unit 64 (all of which are similar to the first i shows the corresponding components of the prior art). The chamber includes a new anode support streamline structure 48, a new upper streamline structure 50, a gas rotating blade 52, a new 5-inch diameter tangential fan structure 46A, and four water-cooled heat exchanger units 58. Figure 13 shows a similar chamber configuration with a new current loop 548. Figure 16 is a block diagram showing the structure of an important laser system for controlling the output facility wavelength and pulse energy. Major improvements over prior art gas discharge lasers include: 1) Improved flow path of laser gas in the circulating chamber 2) Water-cooled pulsed power system 3) Ultra-fast wavelength meter with fast control deduction rule 4) Novel high load Periodic LNP with a combination of PTZ and stepper motor to drive the fine-tuning mirror 5) Large tangent fan with dual water-cooled brushless DC drive blower motor with special controller 6) Ultra-pure nitrogen sweep system for optical protection 7) Comes with Power meter's sealed switch 8) Improved heat exchanger configuration 9) Shedong seal system 10) LNP helium sweep system 11) Current loop with parallel air flow ribs This paper applies Chinese National Standard (CNS) A4 specifications (210X297 mm) -12-541777 A7 ^ --____ B7_ V. Description of the invention (10) 12) Inductive plate for optimal chamber impedance 13) Optimized electrode for performance life. The laser chamber heat exchanger is a preferred embodiment designed to operate at a 4,000 pulse repetition rate. Clearing the discharge between two pulses to affect the gas discharge area requires that the gas flow rate between the electrodes 188 and 208 be as high as about 67 m / s. In order to achieve this speed, the diameter of the tangential fan unit is set to 5 inches (the length of the blade structure is 26 inches), and the rotation speed is increased to 3,500 rpm. In order to achieve this kind of performance, this specific embodiment uses two motors to collectively transmit a driving power of about 4 kilowatts to the fan blade structure. At a pulse rate of 4000 Hz, the discharge will add about 12 kW of thermal energy to the laser gas. In order to remove the heat generated by the pen and the heat added by the fan, four separate water-cooled finned heat exchanger units 58A are provided. The motor and heat exchanger will be described in detail later. The preferred embodiment of the present invention uses FIG. 4A and FIG. 13 to outline the four-degree water-cooled heat exchanger 5 8 A with a heat radiation sheet. Each heat exchanger is slightly similar to the single heat exchanger shown in Figure 1 at 58 but with substantial improvements. The cross-sectional view of one of the heat exchanger components is shown in Figure 2i. In the heat exchanger, the J-side knife is not turned around at both ends. Figure 21A shows an enlarged end view of the heat exchanger with thermal expansion and contraction. The heat is replaced by a 7C component, which includes a heat sink structure 302, which is formed by a solid copper (CU 11 coffee) mechanism, and each pair contains a heat sink 303. Water flow to the HI ^ hole diameter of 33 忖. Plastic spoiler located in the axial channel This paper scale applies the Zhongguanjia standard (where) M specification (2Κ) χ297 public love) 13 (Please read the precautions on the back before filling in this page) Order:: ---- -*-541777 A7 V. Description of the invention (η device 306 can prevent water from flowing in the channel to form a laminar flow, and prevent the formation of a thermal boundary layer on the inside surface of the channel. The flexible flange unit 3 04 is the inner flange 3 04A 'Welding unit consisting of telescopic V 304B and outer flange 304C. The heat exchanger unit includes three c self-sealing 308 to seal the water flow from the laser heat exchanger. The telescopic band 304B allows the heat exchanger to expand relative to the chamber Reduction. Double-mouthed nut 400 connects the parent channel to the standard 5/16 inch positioning elbow fitting, which is in turn connected to the water source. The O-ring 402 provides a nut 400 and a heat sink structure 302. In a preferred embodiment of the spoiler, the spoiler is composed of four off-the-shelf elongated coaxial mixing elements, which are typically used to mix epoxy components and are obtained from 3M Company (static mixer, part number 06-D1229-00). Online Mixer Display Figures 30 and 30 of Figures 21 and 21. The on-line mixture forces water to flow along a rough spiral path, which reverses its clockwise direction at approximately every separation distance (0.3 inches). The spoiler substantially improves the performance of the heat exchanger. Apply Human tests have shown that the addition of a spoiler can reduce the required water flow by about a factor of 5 and maintain comparable gas temperature conditions. In a preferred embodiment, the airflow flows in and out of the discharge zone compared to the previous technology. The chamber is greatly improved. The vane structure 66 is designed to regulate the milk velocity of the region 68, which is regularized to the gas velocity of the region 68 downstream of the fan structure; 0 m / min. In the middle of the chamber, the top of the chamber is cut to give a similar water flow forming surface. Then the gas flow velocity in the discharge zone is accelerated to 67 meters / second. At about 4 inches downstream of the center of the discharge zone, the water flow section (CNS) Α4 ^ (210X297 ^) (Please read the precautions on the back before filling in this page} Order —… line-541777 A7 —-----B7_ 5. Description of the invention (η) is about 5/8 inches at 20 degrees Increased to about 4 inches, and then the gas was rotated by four rotating blades 52. This allows a large percentage of the voltage drop to be recovered through the discharge zone. The sacrum-shaped current loop 548 shown in Figure 13A (1) is formed by a 015-inch-thick nickel alloy (UNS N04400) by a laser mechanism and bent as shown in Figure 13A (3) to 13A (8), so the resistance of 23 ribs to gas flow is minimized. The cross section of each rib is 001 inch x 0.990 inch, and the longitudinal direction is parallel to the gas flow direction. Blower motor and large blower The first preferred embodiment of the present invention provides a large tangential fan driven by a dual motor for circulating laser gas. The preferred configuration shown in Fig. 18 provides a gas flow rate of 67 m / s between the electrodes, which is sufficient for a flow rate of 4,000 Hz to clear a space of approximately 1.7 cm between pulses. The fan blade structure of the fan is shown in cross section at 64A in Figure 4A. The perspective view is shown in Figure 18A. The blade structure is 5 inches in diameter and is made of solid aluminum alloy 6061-T6 rod-shaped stock. The sections of the blades are slightly offset by the adjacent sections. As shown in Figure 18A, the pressure disturbance in the discharge area caused by the blades is reduced. It is preferred that the leading edge of the individual blades be tapered to the blade edge, thereby reducing the reflection of the discharge sound waves from the leading edge of the blade during operation. The specific embodiment shown in FIG. 18 uses two 3-phase brushless DC motors, each having a magnetic rotor housed in a metal pressure cup. As described in US Patent No. 4,950,840, the pressure is separated by the stator portion of the motor and the laser. Gas environment. In this specific embodiment, the pressure cup is a thin-walled nickel alloy 400 with a thickness of 0.016 inches, which serves as a laser gas barrier. The two motors 53 and 2 drive the same -root axis and are programmed for reverse rotation. The second motor is a sensorless motor. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2) 〇 > < 297 mm. 15 (Please read the precautions on the back before filling this page). (13) (In other words, its operation does not include a position sensor). The right motor controller 534 that controls the right motor 53 is used as the main controller. It controls the bin motor control to 53 6 through analog and digital signals to indicate start / stop, current command, current feedback, etc. The communication with the field shooting controller 24A is done by entering the main controller 5342Rs_232 serially. Water-cooled pulsed power system Four kilohertz pulsed power system The operation of the laser system according to the present invention requires precise control of potentials in the range of approximately 12,000 volts to 30,000 volts in ⑽Hz (i.e. between = (Approximately 250 microseconds) is applied between the electrodes. As indicated in Section B of the background, in the first month J technology * pulse power system, the charging capacitor bank is charged to the exact predetermined & control voltage ', which is generated by turning off the solid state switch, so that the cymbals stored in the charging circuit are compressed by compression Amplifying the circuit to generate a predetermined potential across the electrodes @ off-off time to completion of the discharge is only a few microseconds (ie about 5 U heart). The charging interval of Ren Xianyi's technology requires far longer than 250U #. Reduce charging time by using a large power supply or several power supplies. For example, you are asked to use three prior art power supplies in parallel and operate at 4,000 Hz. In this preferred embodiment, as shown in FIG. 5, the applicant uses the same basic design as the solid-state downstream pulse power system part of FIG. 3, which is not read first as shown in FIG. 3. However, the applicant uses different technologies to charge Co. Resonant charging ... Shenyueren uses two types of resonant charging system to charge C very fast. . These systems are described with reference to Figures 6A and 6B. 541777 A7 ~~ ----- ^ _ 5. Description of the Invention (I4) The first resonance charger shows the circuit of the better resonance charging shown in Figure 6-8. In this example, a standard direct power supply of 208 VAC / 90 amp input and 800 VDC 50 amp output is used. The power supply is a DC power supply that can be adjusted from 600 volts to 8 volts. The power supply is directly attached to d, eliminating the need for voltage feedback to the power supply. When the power supply is activated, the power supply starts up and regulates a constant voltage in the C-1 capacitor. The system is independent of the voltage regulation of the c-1, so only the basic control loop is required for the power supply. Secondly, when the voltage of c-i drops below the voltage setpoint, the watchdog 'supply state will increase energy to the system. In this way, the power supply can replenish the energy transferred from C-1 to c0 during the entire time between the laser pulses (even the duration of the laser pulses). This further reduces the peak current demand of the power supply beyond the requirements of prior art pulsed power systems. The combination of requiring the power supply to have the most basic control loop and reducing the peak rated current of the power supply to the average power of the system can reduce the cost of the power supply by about 50/0 °. In addition, 'this better design allows manufacturing The manufacturers are flexible, because a fixed output voltage power supply with a fixed current is easily obtained from multiple source suppliers. Such power supplies are available from suppliers such as Elgar, Universal Voltronics, Kaiser, and EMI. Control Board This power supply continuously charges the 1033 pF capacitor 202 to the voltage required by the control board 204. The control board 204 also orders the opening and closing of the IGBT switch 206 to transfer energy from the capacitor 202 to the capacitor 42. The inductor 208 combines the capacitors 202 and 42 to set the transmission time to a constant value and limits the peak charging current. The paper size of this paper is subject to the Chinese national standard (A4 specification (210X297)) -17-(Please read the precautions on the back before filling this page). Order-: line 丨 541777 A7 ______B7 V. Description of the invention (15) The board 204 receives a voltage feedback 212, which is proportional to the voltage of the capacitor ", and receives a current feedback 214. The current feedback is proportional to the current flowing through the inductor 208. From this two feedback signals, If the switch 20 is turned on instantaneously at this time, the control board 204 can calculate the final voltage value of the capacitor 42 in real time. Therefore, the command voltage 210 is fed into the control board 204 and the stored energy can be stored in the capacitor 42 and the inductor 208. Make an accurate calculation and compare it with the required charging pressure command 2 10. From this calculation, the control board 204 will determine the correct time to turn on the IGBT switch 206 during the charging cycle. The system accuracy is after the IGBT switch 206 is turned on, The magnetic field energy stored in the inductor 20 will be transferred to the capacitor 42 through several constrained diode paths 215. The accuracy of the instantaneous energy calculation will determine the amount of fluctuations in the final voltage fluctuations of the capacitor 42. The extreme charging rate of this system may have too much jitter to meet the predetermined system adjustment requirements of ± 0.05%. In this way, additional circuits such as de-qing circuits or no circuits may be used, which will be described in detail later. Resonant charger The second resonant charger system is shown in Figure 6B. This circuit is similar to Figure 6A. The main circuit components are: II-three-phase power supply with constant DC current output 300. C-1 -A source capacitor 302, which is higher than the existing Cq capacitor 42 by a first power amplitude or more. Q1, Q2, and Q3-switches that control current flow to charge and maintain the regulated voltage of co.

Dl、D2及D3-提供電流單向流動。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公茇) 18 (請先閲讀背面之注意事項再填寫本頁) -訂— · :線丨 541777 A7 __ B7_ 五、發明説明(I6) R1及R2-提供電壓回授至控制電路。 R3-於小量過充時允許Cq電壓快速放電。 L1-C-1電容器302與C〇電容器42間之共振電感器,俾限 制電流以及設定充電移轉時序。 控制板304-基於電路回授參數指令qi、〇2及⑴的開 閉。 操作範例舉例如後: 第6B圖電路與第6A圖電路之差異係加上開關Q2及二 極體D3,稱做迪京開關。此種開關經由允許控制單元於電 感器外短路而改進電路的調節。此種「迪京」可防止儲存 於充電電感器L1電流的額外能量被移轉至電容器c〇。 於需要雷射脈衝前,C-1電壓被充電至600-800伏特, 開關Q1-Q3開啟。有來自雷射的指令時,Q1關閉。此時電 流將由C·1經由充電電感器L1流至C〇。如前段說明,控制 板上的計异器將評估Cq電壓以及於L丨流動的電流相對於 來自雷射的指令電壓設定點。當C1電壓加儲存於電感器u 之相等能量等於預定指令電壓時Q1開啟。計算式為: V 尸[vC0s2+((Li*Ili,)/C())]0.5 此處: V产Q1開啟以及乙丨電流至零後之Cg電壓。Dl, D2, and D3- provide unidirectional current flow. This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297 cm) 18 (Please read the precautions on the back before filling this page) -Order — ·: Line 丨 541777 A7 __ B7_ V. Description of the Invention (I6) R1 And R2- provides voltage feedback to the control circuit. R3 allows Cq voltage to discharge quickly when a small amount of overcharge occurs. The resonant inductor between the L1-C-1 capacitor 302 and the Co capacitor 42 limits the current and sets the charging transfer timing. Control board 304-based on circuit feedback parameter commands qi, 〇2 and ⑴ on and off. The operation example is as follows: The difference between the circuit in Figure 6B and the circuit in Figure 6A is the addition of switch Q2 and diode D3, which is called Dijing switch. This switch improves the regulation of the circuit by allowing the control unit to short-circuit outside the inductor. This "Dijing" prevents the extra energy stored in the charging inductor L1 current from being transferred to the capacitor c0. Before the laser pulse is needed, the C-1 voltage is charged to 600-800 volts and the switches Q1-Q3 are turned on. When there is a command from the laser, Q1 turns off. At this time, the current will flow from C · 1 to C0 through the charging inductor L1. As explained in the previous paragraph, the differentiator on the control board will evaluate the Cq voltage and the current flowing at L 丨 relative to the command voltage set point from the laser. Q1 turns on when the C1 voltage plus the equivalent energy stored in the inductor u is equal to the predetermined command voltage. The calculation formula is: V corpus [vC0s2 + ((Li * Ili,) / C ())] 0.5 Here: C voltage of V1 after Q1 is turned on and the current is zero.

Vc〇s=Ql開啟時之電壓。 lLls=Qi開啟時流經L1之電流。 Q1開啟後,儲存於L1之能量開始經由D2移轉至Cq,直 至CG電壓約等於指令電壓為止。此時Q2關閉而電流停止流Vc0s = voltage when Ql is on. lLls = Current flowing through L1 when Qi is on. After Q1 is turned on, the energy stored in L1 starts to be transferred to Cq via D2 until the CG voltage is approximately equal to the command voltage. At this point, Q2 turns off and the current stops flowing.

本紙張尺度適财關緖準(cnsu^(2]OX297^) —ITT (請先閲讀背面之注意事項再填寫本頁)This paper is suitable for financial standards (cnsu ^ (2) OX297 ^) —ITT (Please read the notes on the back before filling this page)

541777 A7 B7 五、發明説明(17) 至co,被導引通過D3。除了「迪京」電路之外,來自洩下 電路的Q3及R3允許額外對Co電壓做微調。 莓流經電感裔L1之電流停止時,沒下電路216開關q 3 將由控制板指令關閉,CG電壓將洩下至預定控制電壓然後 Q 3開啟。電容器c G及電阻器R 3之時間常數夠快而可泡下電 容器C〇至指令電壓不占總充電週期可察覺量。 結果共振充電器配置有三階調節控制。略微粗調節係 由月匕里计异為以及充電週期期間開關Q 1的開啟提供。當C〇 電壓接近目標值時,迪京開關關閉;CG電壓於或略高於目 標值時停止共振充電。較佳具體實施例中,開關Q1及迪京 開關用來提供調郎’準石隹度優於+/- 0.1 %。若需額外調節, 則可利用對電壓調節之第三控制裝置。此乃開關Q3&R3 之'Λ下電路(弟6B圖顯示於216)將CG放電至準確目標值。 C〇下游的改良 如前述,本發明之脈衝功率系統利用第3圖所示先前技 藝系統使用的相同基本設計。但基本設計要求若干重大改 良’因重複率大增結果導致熱負載增加3因數。此項改良容 後詳述。 整流器及壓縮頭之詳細說明 整流器40及壓縮頭60之主要組成元件顯示於第3圖,討 論於背景乙節有關系統的操作。於本節將說明整流器及壓 縮頭的製造細節。 固態開關 固態開關46為泡瑞斯(Powerex)公司(賓州楊格塢)提供 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 20 (請先閲讀背面之注意事項再填寫本頁) .訂— 541777 A7 ______B7_ 五、發明説明(ι〇 的P/NCM 800 HA-34HIGBT開關。較佳具體實施例中,將 兩個此種開關並聯。 電感器 電感48、54及64為可飽和電感器,類似美國專利 5,448,580及5,3 15,611所述先前系統使用的可飽和電感 器,一案以引用方式併入此處。第7圖顯示L〇電感器48之較 佳設計。本電感器中,來自兩個IGBT開關46B之4個電導體 通過16個鐵氧體環形線圈49而形成部件48A,部件48A係由 極高導磁率材料製成的8吋長中空工作缸,具有1〇約1忖以 及Od約1_5吋。然後4個導體各自環繞絕緣圈餅形鐵心包裹 兩次形成部件48B。然後4個導體連接至一板,該板又連接 至C〗電感器排組52之高電壓側。 可飽和電感器54之較佳略圖顯示於第8圖。此種情況 下’電感器為單匝幾何,此處組裝頂蓋及底蓋541及542以 及中央心軸543(全部皆於高電壓)而形成通過電感器磁心 的單匝。外殼545係於地電位。磁心為賓州巴特勒,美葛内 堤(Magnetics)公司或加州亞迪蘭托,國家亞諾(Nati〇nal Arnold)公司提供的厚0.0005吋帶捲繞的50_50〇/()鎳-鐵合 金。電感器殼體的散熱片546可輔助内部散熱傳輸至強制氣 冷。此外,陶瓷圓盤(圖中未顯示)安裝於反應器底蓋下方, 輔助由總成中段傳熱至模組底座基板。第8圖也顯示高電壓 連結至C〗電容器排組52的電容器之一、以及連結至1 : 25 步進向上脈衝變壓器56之電感單元之一的高電壓引線。殼 體545連結至單元56的地線。 本紙張尺度適用中國國家標準(CNS) A4規格(21〇><297公釐) 21 (請先閲讀背面之注意事項再填寫本頁) -裝丨 、? —線丨 541777 A7 B7 五、發明説明(19) 可飽和電感器64之頂視圖及剖面圖分別顯示於第9A 及9B圖。本具體實施例之電感器中,金屬件3(n、3〇2、3〇3 及304除外的通量加總,如第9B圖所示俾減少電感器的洩 漏通量。金屬件除外的通量實質縮小磁通量可穿透的面 積,因此輔助將電感器的可飽和電感降至最低。電流係於 %繞磁心3 0 7的電感為總成通過垂直電感器桿繞$圈。於3 $ 進入的電流,向下前進通過中央標示為「1」的大直徑導體, 前進至周邊也標示為「1」的六個較小導體,如第9 A圖所 示。然後電流向下流過内側標示為2的兩個導體,然後向上 流至外側標示為2的6個導體,然後向下流至内側之金屬除 外的通量,然後向上流至外側標示為3的6個導體,然後向 下流至内側標示為3的兩個導體,然後向上流至外側標示為 4的6個導體,然後向下流至内側標示為4的導體。金屬組成 元件除外的通量維持於跨導體的半全脈衝電壓,允許排除 金屬部件之通量與其它匝金屬桿間的安全維持間隔減小。 磁心307係由至多三個線圈307A、B&c製成,線圈係由賓 州巴特勒,美葛内堤公司或加州亞迪蘭托,國家亞諾公司 提供的厚度0.0005吋帶狀80-20%鎳-鐵合金繞組形成。讀者 發現奈米-結晶材料例如得自德國真空席特子(vacuum SCHITELZE)公司之維徹平(VITR〇pEAN)以及得自日本曰 立美科(Hitachi Mekels)公司之芬麥特(FINEMET)之奈米結 晶材料可用於電感器54及64。 於先前技藝脈衝功率系統,由電氣組件漏油構成一項 潛在問題。本較佳具體實施例中,油絕緣的組成元件限於 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公楚) 22 (請先閲讀背面之注意事項再填寫本頁) -、可 :線丨 541777 A7 B7 五、發明説明(2〇 可飽和電感器。此外,第9B圖顯示的可飽和電感器料係罩 於盆形含油殼體,其中全部密封連結係位於油面上方而實 質免除漏油的可能。例如電感器64的最下封顯示於第叩圖 的308。因正常油面係低於殼體3〇6的頂唇,故只要殼體維 持直立’則油幾乎不可能洩漏出總成外側。 電容器 第5圖顯示之電容器排組42、52、62及82(亦即c〇、q、 〔…及。。全部係由購買現成電容器並聯連結排組組成。電 谷為42及52屬於薄膜型電容器,可得自例如北加州史戴維 爾,維穗羅德坦(Vishay R〇ederstein)公司或德國威瑪(貿如幻 公司等供應商。申請人連結電容器及電感器之較佳方法係 以類似美國專利第5,448,580號所述方式,焊接至有重鎳塗 覆銅引線之特殊印刷電路板上的正及負端子。電容器排組 62及82典型係由得自供應商例如村田或tdk(皆為曰本公 司)之高電壓陶瓷電容器並聯陣列組成。用於本KrF雷射之 較佳具體實施例,電容器排組82(亦即Cp)係由33個〇.3 nF 電容裔排組組成’獲得電容9.9 nF ; Cp^係由24個0.40 nF 電容組成,總電容9 · 6 nF ; C i為5 _ 7 μΜ電容器排組以及 C〇為5.3 μΜ電容器排組。 脈衝變壓器 脈衝變壓器56也類似美國專利第5,448,580及 5,3 13,481號所述脈衝變壓器;但本具體實施例之脈衝變壓 器於二次繞組只有單匝,24個電感單元等於1 : 24相等步進 比之單一主匝的1 /24。脈衝變壓器56之略圖顯示於第1 〇 23 (請先閱讀背面之注意事項再填寫本頁) 、\t — .線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 A7 _____ B7 五、發明説明(21 ) 圖。24個電感單元各自包含有二凸緣的铭短管56A(個別帶 有螺紋孔之平坦邊緣),其被拴至印刷電路板56β之正及負 端子,如沿第10圖底緣所示(負端子為24一次繞組的高電壓 端子)。絕緣體56C隔開各短管的正端子與毗鄰短管負端 子。短管之凸緣間有個中空工作缸長i 1/16吋,〇 875〇d, 壁厚度約1/32忖。短管包裹有1忖寬〇·7密耳厚的美格雷斯 (Metglas)2605 S3 A以及〇·ι密耳厚度密樂(Mylar)薄膜至絕 緣美格雷斯包裹之OD為2.24吋為止。形成一次繞組的單一 包晨短管之透視圖顯示於第1 〇 A圖。 變壓為之二次繞組為單一 〇D不鏽鋼桿架設於 PTFE(鐵弗龍)緊密嵌合至絕緣管内側。繞組有四個截面, 如第10圖所示。不鏽鋼二次繞組之低電壓端於第1〇圖顯示 於56D,繫至印刷電路板56B之一次HV引線56£,高電壓端 子顯示於56F。結果變壓器形成自動變壓器配置,步進向 上比變成1 : 25而非1 : 24。如此電感單元之正端子與負端 子間約_ 1400伏特脈衝將於二次端的端子5仆產生約 -35,000伏特脈衝。此種單阻二次繞組設計可提供極低洩漏 電感,允許極快速輸出升高時間。 雷射腔室電氣組成元件細節541777 A7 B7 V. Description of the invention (17) to co, led through D3. In addition to the "Dijing" circuit, Q3 and R3 from the bleeder circuit allow additional fine-tuning of the Co voltage. When the current flowing through the inductor L1 is stopped, the switch q 3 of the circuit 216 will be closed by the control board command, the CG voltage will be discharged to the predetermined control voltage and then Q 3 will be turned on. The time constants of the capacitor c G and the resistor R 3 are fast enough to discharge the capacitor C 0 to the command voltage so that they do not account for the perceptible amount of the total charging cycle. As a result, the resonance charger is equipped with a third-order adjustment control. The slightly coarse adjustment system is provided by the behavior of the moon and the switch Q 1 during the charging cycle. When the voltage of Co is close to the target value, the Dijing switch is turned off; when the voltage of CG is slightly higher than the target value, resonance charging is stopped. In a preferred embodiment, the switch Q1 and the Dickin switch are used to provide a tuned quasi-silicon degree better than +/- 0.1%. If additional adjustment is required, a third control device for voltage adjustment can be used. This is the 'Λ lower circuit of switch Q3 & R3 (Figure 6B shows at 216) to discharge CG to the accurate target value. C. Downstream Improvements As mentioned earlier, the pulse power system of the present invention utilizes the same basic design used in the prior art system shown in FIG. However, the basic design requires a number of major improvements, which caused a 3 factor increase in thermal load due to the large increase in repetition rate. This improvement will be detailed later. Detailed description of the rectifier and the compression head The main components of the rectifier 40 and the compression head 60 are shown in Fig. 3, which discusses the operation of the system in background section B. In this section, the manufacturing details of the rectifier and the compression head will be explained. Solid State Switch Solid State Switch 46 is provided by Powerex Corporation (Yangguwu, Penn.) This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 20 (Please read the precautions on the back before filling in this Page). Order — 541777 A7 ______B7_ V. Description of the invention (ι〇 P / NCM 800 HA-34HIGBT switch. In a preferred embodiment, two such switches are connected in parallel. Inductors 48, 54 and 64 are optional. Saturated inductors, similar to the saturable inductors used in previous systems described in U.S. Patent Nos. 5,448,580 and 5,3 15,611, are hereby incorporated by reference. Figure 7 shows the betterness of the L0 inductor 48. Design. In this inductor, 4 electrical conductors from two IGBT switches 46B are formed by 16 ferrite toroidal coils 49 to form part 48A. The part 48A is an 8-inch long hollow working cylinder made of extremely high magnetic permeability material. , With 10 to 1 忖 and Od about 1 to 5 inches. Then the four conductors are wrapped twice around the insulating ring pie-shaped core to form a component 48B. Then the four conductors are connected to a board, which is in turn connected to C. Inductor row High voltage side of group 52. Saturable electricity A better schematic of the device 54 is shown in Figure 8. In this case, the inductor is a single-turn geometry, where the top and bottom covers 541 and 542 and the central mandrel 543 (all at high voltage) are assembled and passed. A single turn of the inductor's magnetic core. The casing 545 is connected to ground potential. The magnetic core is 0.0005 thick provided by Butler, Penn., Magnetics, or Adilanto, California. Inch tape wound 50_50〇 / () nickel-iron alloy. The heat sink 546 of the inductor housing can assist the internal heat transfer to forced air cooling. In addition, a ceramic disc (not shown) is installed under the bottom cover of the reactor Auxiliary heat transfer from the middle of the assembly to the base plate of the module. Figure 8 also shows one of the capacitors connected to the high-voltage capacitor bank 52 with high voltage, and the inductor unit connected to the 1:25 step-up pulse transformer 56 High voltage lead. The case 545 is connected to the ground of the unit 56. This paper size applies the Chinese National Standard (CNS) A4 specification (21〇 < 297mm) 21 (Please read the precautions on the back before (Fill in this page) -install 丨 、? —Line 丨 541 777 A7 B7 V. Description of the invention (19) The top view and sectional view of the saturable inductor 64 are shown in Figures 9A and 9B, respectively. In the inductor of this embodiment, the metal part 3 (n, 3, 2, 3 〇3 and 304 except the sum of the flux, as shown in Figure 9B, reduce the leakage flux of the inductor. The flux except the metal parts substantially reduces the area that the magnetic flux can penetrate, so it helps to saturate the inductor's saturable inductance. Reduced to the minimum. The current is based on the inductance of the winding around the core 3 0 7 as the assembly is wound by $ turns through the vertical inductor rod. The current entered at 3 $ goes down through the large-diameter conductor marked "1" in the center, to the six smaller conductors also marked "1" in the periphery, as shown in Figure 9A. Then the current flows down through the two conductors labeled 2 on the inside, then up to the 6 conductors labeled 2 on the outside, and then down to the flux except the metal on the inside, and then up to the 6 labeled 3 on the outside. The conductor then flows down to the two conductors marked 3 on the inside, and then flows up to the 6 conductors marked 4 on the outside, and then down to the conductor marked 4 on the inside. The flux except for metal components is maintained at a semi-full impulse voltage across the conductor, allowing the safe maintenance interval between the flux of the metal component and other turns of the metal rod to be reduced. The core 307 series is made of up to three coils 307A, B & c. The coils are provided by Butler, Pennsylvania, Meganet, Inc. or Adilanto, Calif., And 0.0005 inches in thickness. 80-20 % Nickel-iron alloy windings formed. Readers find nano-crystalline materials such as those obtained from VITROPEAN of vacuum SCHITELZE, Germany and nanometers of FINEMET from Hitachi Mekels, Japan A crystalline material can be used for the inductors 54 and 64. In prior art pulsed power systems, oil leaks from electrical components pose a potential problem. In this preferred embodiment, the constituent elements of oil insulation are limited to the paper size applicable to the Chinese National Standard (CNS) A4 specification (21〇297297) 22 (Please read the precautions on the back before filling this page)-, may : Line 丨 541777 A7 B7 V. Description of the invention (20 saturable inductors. In addition, the saturable inductor material shown in Figure 9B is covered in a basin-shaped oil-containing housing, and all of the sealed connections are located above the oil surface and are essentially Eliminate the possibility of oil leakage. For example, the bottom seal of the inductor 64 is shown in Figure 308. As the normal oil level is lower than the top lip of the housing 306, as long as the housing remains upright, the oil is almost impossible. Leaked outside the assembly. Capacitor banks 42, 52, 62, and 82 shown in Figure 5 of the capacitor (that is, c0, q, [... and ...) are all made of purchased off-the-shelf capacitors connected in parallel. Power Valley is 42 and 52 are film type capacitors, which can be obtained from suppliers such as Stawell, Northern California, Vishay Roederstein or Weimar, Germany. Applicants link capacitors and inductors. The best way is to class U.S. Patent No. 5,448,580 solders positive and negative terminals on special printed circuit boards with heavy nickel-coated copper leads. Capacitor banks 62 and 82 are typically obtained from suppliers such as Murata or tdk (both are (This company) is composed of a parallel array of high-voltage ceramic capacitors. For the preferred embodiment of the KrF laser, the capacitor bank 82 (ie Cp) is composed of 33 0.3 nF capacitor banks. Capacitance 9.9 nF; Cp ^ is composed of 24 0.40 nF capacitors, with a total capacitance of 9 · 6 nF; C i is a 5-7 μM capacitor bank and C0 is a 5.3 μM capacitor bank. Pulse Transformer Pulse Transformer 56 is also similar to the United States The pulse transformers described in Patent Nos. 5,448,580 and 5,3 13,481; however, the pulse transformer of this embodiment has only a single turn on the secondary winding, and 24 inductance units are equal to 1 of a single main turn with an equal step ratio of 1:24. / 24. The schematic diagram of the pulse transformer 56 is shown on page 1023 (please read the precautions on the back before filling this page), \ t — .line 丨 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ) 541777 A7 _____ B7 V. Description of the invention (21) Figure. Each of the 24 inductor units contains two flanged short stubs 56A (individual flat edges with threaded holes), which are bolted to the positive and negative terminals of the printed circuit board 56β, such as along the first As shown in the bottom edge of Figure 10 (the negative terminal is a high-voltage terminal with 24 primary windings). The insulator 56C separates the positive terminal of each short tube from the negative terminal of the adjacent short tube. There is a hollow cylinder length i 1 between the flanges of the short tube. / 16 inch, 0875 d, wall thickness is about 1/32 忖. The short tube was wrapped with a 1 忖 wide 0.77 mil thick Metglas 2605 S3 A and a 0 · mil mil thick Mylar film until the OD of the insulated Meigras package was 2.24 inches. A perspective view of a single bundled short tube forming a primary winding is shown in Figure 10A. The secondary winding of the transformer is a single OD stainless steel rod mounted on a PTFE (Teflon) tightly fitted to the inside of the insulation tube. The winding has four sections, as shown in Figure 10. The low-voltage terminal of the stainless steel secondary winding is shown at 56D in Figure 10, the primary HV lead to 56B of the printed circuit board 56B, and the high-voltage terminal is shown at 56F. As a result, the transformer forms an automatic transformer configuration, and the step-up ratio becomes 1:25 instead of 1:24. In this way, a pulse of about 1400 volts between the positive terminal and the negative terminal of the inductive unit will generate a pulse of about -35,000 volts at the terminal 5 of the secondary terminal. This single-resistance secondary winding design provides extremely low leakage inductance, allowing very fast output rise times. Laser chamber electrical components details

Cp電谷态82係由3 3個〇.3 nf電容器排組架設於腔室加 壓容器頂部組成。電極長約28吋,隔開約〇 5至1〇吋。較 佳間隙間隔為KrF之16.5毫米(ArF較佳分開13·5毫米)。較佳 電極容後詳述。本具體實施例中,頂電極稱作為陰極,底 電極接地,如第5圖所示,稱作為陽極。 本紙張尺度適用中國國家標準(⑶s)从規格(公爱) 24 (請先閲讀背面之注意事項再填寫本頁}The Cp electric valley state 82 is composed of 33 0.3 nf capacitor banks arranged on the top of the chamber pressure vessel. The electrodes are about 28 inches long and spaced from about 0.5 to 10 inches. The preferred gap interval is 16.5 mm for KrF (ArF is preferably separated by 13.5 mm). The preferred electrode capacity is detailed later. In this embodiment, the top electrode is referred to as a cathode, and the bottom electrode is grounded, as shown in FIG. 5, and referred to as an anode. This paper size applies Chinese National Standards (CDs) from specifications (public love) 24 (Please read the precautions on the back before filling this page}

541777 五、發明説明(22 組成元件之水冷卻 為了配合較高熱負載,此處提供之水 内部冷卻風扇提供的平常強制空氣冷卻外,較^田,至 此種較高平均功率模式操作。 σ棱於 水冷卻缺點傳統上有接近電氣組件或高 可能。本特定具體實_經㈣料-固體冷卻管路由 於模組内冑,冷卻通常耗散模組内部沉積的大部分埶量之 組成兀件’可實質避免該項電位問題。由於模組包圍體的 内部未存在有接頭或連、结,且冷卻管為固體金屬(如銅、不 鑛鋼等)連續件,模組内部發生漏電流的機率大減。因此^ =的模組連結係在總成金屬片材包圍體外側,於該處= 卻管匹配快速拆卸型連接器。 整流器之詳細說明 54 線 組 震 於整流器模組之例,提供水冷式可飽和電感器54A, 如第11A圖所示,該圖類似第8圖之電感器54,但散射片 係以水冷式夾套54A1替代,如第丨丨a圖所示。冷卻管 54A2路由於模組内側包裹於夾套54A1周圍,通過鋁底板 於鋁底板架設IGBT開關以及串聯二極體。三個組成元件 成杈組内部的大部分功率耗散。其它也可散熱的項目(減一 器二極體及電阻器、電容器等)係由模組後方的二風扇提供 的強制氣流冷卻。 因夾套5 4 A1係維持於地電位,故冷卻管直接附著於反 應器殼體並無電壓分隔問題。此項目的係經由將冷卻管按 壓嵌合於切割於殼體外側的鳩尾切槽如54A3所示達成,以 25 本紙張尺度適用中國國家標準(Q^) A4規格(2]〇χ297公釐) 541777 A7 __ B7 五、發明説明(23 ) 及使用導熱化合物輔助冷卻管與殼體間做良好熱接觸達 成。 冷卻高電壓組成元件 雖然IGBT開關於高電壓為「浮動」,但IGBT開關係架 設於鋁底座,與開關電隔離1/16吋後氧化鋁板。作為熱井 且於地電位操作的鋁底板遠較容易冷卻,原因在於冷卻電 路無需做高電壓隔離。水冷式鋁底板之略圖顯示於第7 A 圖。此例中,冷卻管被壓合至鋁底板切槽,鋁底板上安裝 IGBT如同電感态54A,使用導熱化合物來改善管路與底 板間的整體接合。 正常操作期間,串聯二極體也於高電位浮動。此種情 況下,二極體殼體典型用於設計而未提供高電壓隔離。為 了提供此種必須的隔離,二極體「曲棍球橡皮圓盤狀」封 裝體夾在熱井總成内部,然後安裝於陶瓷底座頂部,然後 安裝於水冷式鋁底板頂部。陶瓷底部恰夠厚而可提供所需 的電隔離,但又不會太厚而招致大於需要的熱阻抗。用於 本特殊設計,陶兗為1/16忖厚氧化紹,但其它外來材料例 如氧化鈹也可用於進一步降低二極體接合與冷卻水間的熱 阻抗。 水冷式整流器之第二具體實施例利用附著於1〇8丁及 -極體之底座基板的總成作為單_冷卻板總成。冷卻板可 將單片鎳管硬焊至二銘「頂板」及「底板」製成。如前述, IGBT及:極體設計成使用前述於總成下方的陶兗圓盤而 傳熱至冷卻板。本發明之較佳具體實施例中,冷卻板冷卻 本紙張尺度適用中國國家標準(CNS) A4規格(2]〇χ297公楚) (請先閲讀背面之注意事項再填寫本頁) •裝— 線丨 541777 A7 _______B7_ 五、發明説明(24 ) 方法也用來冷卻共振充電器的IGBT及二極體。熱管導熱桿 也用來由外側殼體傳熱至底座基板。 壓縮頭之詳細說明 水冷式壓縮頭類似先前技藝氣冷式版本的電氣設計 (使用同類型陶瓷電容器,使用類似材料用於反應器設 计)。本例之主要差異為模組需以較高重複率進行,因此以 較高平均功率進行。於壓縮頭模組之例,大半的熱被耗散 入經修改的可飽和電感器64A。總成的冷卻並不簡單,原 因在於整個设體係以極雨電壓的短脈衝操作。如第12、12 a 及12B圖所示本液體的解決之道係將殼體與地電位感應隔 離。此種電感係將冷卻管包裹於二工作缸周圍形成含鐵氧 體磁鐵心提供。輸入及輸出冷卻管線係環繞由二工作缸部 以及一鐵氧體塊形成的鐵氧體磁心之工作缸周圍盤捲,如 第12、12A及12B圖所示。 鐵氧體塊係由紐澤西州菲爾費得陶瓷磁性(Ceramic Magnetics)公司製造的CN-20材料製成。單塊銅管(直徑 0.187吋)被壓合,環繞電感器64A殼體64A1以及環繞第二 繞組形式捲繞成一繞組形式。末端留下足夠長度來延伸貫 穿壓細頭金屬覆蓋片材的嵌合件,因此底板内部不存在有 冷卻管接頭。 類似用於水冷式整流器第一階段反應器殼體,電感器 64A包含鳩尾切槽,顯示於64A2。此殼體較為類同先前氣 冷式版本,鳩尾切槽例外。銅冷卻水管壓縮嵌合於切槽, 俾於设體與冷卻水管間做良好熱連接。也添加導熱化合物 本紙張尺度適用中國國家標準(CNS) Α4規格(210χ297公釐) 27 (請先閱讀背面之注意事項再填寫本頁) 、τ.541777 V. Description of the invention (22 Component water cooling In order to match higher thermal load, the water provided by the internal cooling fan provided here is usually forced air cooling to operate in such a higher average power mode than 较 田. Σedge in Disadvantages of water cooling have traditionally been close to electrical components or have a high possibility. This specific concrete _ warp material-solid cooling pipeline due to module internal cooling, cooling usually dissipates most of the components deposited inside the module This potential problem can be substantially avoided. Since there are no joints or connections or junctions inside the module enclosure, and the cooling pipe is a continuous piece of solid metal (such as copper, stainless steel, etc.), the probability of leakage current inside the module It is greatly reduced. Therefore, the module connection of ^ = is on the outside of the metal sheet enclosure of the assembly, where it is matched with a quick-disconnect type connector. Detailed description of the rectifier 54 The example of the line group shaking the rectifier module, provided Water-cooled saturable inductor 54A, as shown in Figure 11A, is similar to inductor 54 in Figure 8, but the diffuser is replaced with a water-cooled jacket 54A1, as shown in Figure 丨 a. Cooling 54A2 is routed inside the module and is wrapped around the jacket 54A1. An IGBT switch and a series diode are set up on the aluminum base plate through the aluminum base plate. The three components constitute most of the power dissipation inside the branch group. Other items that can also dissipate heat ( Subtractor diodes, resistors, capacitors, etc.) are forced air cooling provided by two fans behind the module. Since the jacket 5 4 A1 is maintained at ground potential, the cooling tube is directly attached to the reactor housing and There is no voltage separation problem. This project is achieved by pressing and fitting the cooling pipe to the dovetail cut groove cut on the outside of the casing as shown in 54A3. The Chinese national standard (Q ^) A4 specification is applied to 25 paper sizes (2) 〇χ297mm) 541777 A7 __ B7 V. The description of the invention (23) and the use of thermally conductive compounds to assist in making good thermal contact between the cooling tube and the case. Cooling high-voltage components Although the IGBT switch is "floating" at high voltage, but The IGBT is mounted on an aluminum base, which is electrically isolated from the switch by a 1 / 16-inch rear aluminum oxide plate. The aluminum base plate, which operates as a thermal well and operates at ground potential, is much easier to cool because the cooling circuit has no High voltage isolation. The sketch of the water-cooled aluminum base plate is shown in Figure 7 A. In this example, the cooling tube is crimped to the aluminum base slot. Integrated connection with the base plate. During normal operation, the series diodes also float at high potential. In this case, the diode housing is typically used for design without high voltage isolation. In order to provide this necessary isolation, The diode "hockey rubber disc-shaped" package is sandwiched inside the heat well assembly and then mounted on top of a ceramic base and then on top of a water-cooled aluminum base plate. The ceramic bottom is just thick enough to provide the required electrical isolation. But it will not be too thick and cause more thermal resistance than needed. For this special design, the ceramic is 1/16 忖 thick oxide, but other foreign materials such as beryllium oxide can also be used to further reduce diode junction and cooling water. Thermal impedance. The second embodiment of the water-cooled rectifier uses the assembly of the base substrate attached to the 108-pole and -pole body as a single cooling plate assembly. The cooling plate can be made by brazing a single piece of nickel tube to Erming "top plate" and "bottom plate". As mentioned above, the IGBT and the pole body are designed to transfer heat to the cooling plate using the ceramic pottery discs underneath the assembly. In the preferred embodiment of the present invention, the cooling plate is used to cool the paper. The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (2) 〇χ297 公 楚 (Please read the precautions on the back before filling out this page).丨 541777 A7 _______B7_ 5. Description of the Invention (24) The method is also used to cool the IGBT and diode of the resonant charger. The heat pipe thermal rod is also used to transfer heat from the outer casing to the base substrate. Detailed description of the compression head The water-cooled compression head is similar to the electrical design of the previous art air-cooled version (using the same type of ceramic capacitors and using similar materials for reactor design). The main difference in this example is that the module needs to be performed at a higher repetition rate, so it is performed at a higher average power. In the case of a compression head module, most of the heat is dissipated into a modified saturable inductor 64A. The cooling of the assembly is not simple because the entire system is operated with short pulses of extreme rain voltage. As shown in Figures 12, 12a and 12B, the solution of this liquid is to isolate the casing from ground potential. This type of inductor is provided by wrapping a cooling tube around the two cylinders to form a ferrite core. The input and output cooling lines are coiled around the cylinder of the ferrite core formed by two cylinder sections and a ferrite block, as shown in Figures 12, 12A and 12B. The ferrite block is made of CN-20 material made by Ceramic Magnetics, Inc. of New Jersey. A single piece of copper tube (0.187 inches in diameter) was crimped and wound around the inductor 64A housing 64A1 and around the second winding form into a winding form. The end is left with sufficient length to extend through the fitting of the thin metal cover sheet, so there is no cooling pipe joint inside the base plate. Similar to the first-stage reactor housing for a water-cooled rectifier, the inductor 64A includes a dovetail notch, shown in 64A2. This housing is similar to the previous air-cooled version, with the exception of dovetail grooving. The copper cooling water pipe is compressed and fitted in the cut groove, and the heat pipe is well connected between the body and the cooling water pipe. Thermally conductive compounds are also added. This paper is sized for China National Standard (CNS) A4 (210 x 297 mm) 27 (Please read the precautions on the back before filling this page), τ.

••線I 541777 五 發明說明(25 來將熱阻抗減至最低。 電感器64A之電設計係與第9八及9]3圖顯示的64略微 改變。電感器64A只提供環繞磁心(64A3)的二迴路(替代五 迴路)’係由四磁帶線圈(而非三線圈)組成。 由於此種水冷式管路傳導路徑由輸出電位至地電位的 結果,偏壓電流電路現在略有差異。如前述,偏壓電流係 由整流器的直流-直流換能器通過纜線供給壓縮頭。電流通 過正」偏壓電感裔lb2,且連接至Cp-Ι電壓節點。然後電 流分裂,部分經由HV纜線(於接地之後通過變壓器返回直 直流換能器)返回整流器。其它部分通過壓縮頭反應器 L、P-1(至偏壓磁開關),然後通過冷卻水管路「負」偏壓電 感器Lm,返回接地及直流_直流換能器。經由平衡各腳的 電阻,設計工程時可確保有足夠偏壓電流可用於壓縮頭反 應器及整流器變壓器二者。 「正」偏壓電感器LB2極為類似「負」偏壓電感器Lb3。 此種情況下,相同鐵氧體棒及塊用作為磁心。但兩個厚 0.125叶的歸間隔件用來於磁電路形成氣隙,讓磁心不會 被直流電流飽和。替代以冷卻水管路繞組電感器,i8awg 鐵弗龍線繞於成型件周圍。 快速連結 本較佳具體實施例中,脈衝功率電模組之三者利用盲 目匹配電連接’單純經由將模組滑入雷射室定位,而做出 連接至雷射系統部分的全部電連接。此等為交流分配模 、组、電源供應器模組及共振充電器模組。各例中模組的公•• Wire I 541777 Five invention descriptions (25 to minimize thermal impedance. The electrical design of the inductor 64A is slightly changed from the 64 shown in Figures 9 and 9). The inductor 64A only provides a surrounding core (64A3) The second circuit (instead of the five circuit) is composed of a four-tape coil (instead of a three-coil). As a result of the conduction path of this water-cooled pipe from the output potential to the ground potential, the bias current circuit is now slightly different. As mentioned above, the bias current is supplied from the rectifier's DC-DC transducer through the cable to the compression head. The current passes through the positive bias inductor lb2 and is connected to the Cp-1 voltage node. The current is then split, partly via the HV cable Wire (after grounding, return to DC converter through transformer) to the rectifier. The other parts pass through the compression head reactor L, P-1 (to the bias magnetic switch), and then "negative" bias the inductor through the cooling water pipe Lm, return to ground and DC-DC transducer. By balancing the resistance of each pin, the design project can ensure that there is sufficient bias current available for both the compression head reactor and the rectifier transformer. "Positive" bias current LB2 is very similar to the "negative" bias inductor Lb3. In this case, the same ferrite rod and block are used as the magnetic core. However, two return spacers with a thickness of 0.125 are used to form an air gap in the magnetic circuit, so that The magnetic core will not be saturated by the DC current. Instead of the cooling water pipe winding inductor, i8awg Teflon wire is wound around the molded part. Quick connection In this preferred embodiment, three of the pulsed power modules use blind matching electricity. The connection is made solely by sliding the module into the laser chamber to make all electrical connections to the laser system. These are AC distribution modules, groups, power supply modules and resonance charger modules. Each Module of the example

五、發明説明(26 ) 或母插頭匹配安裝於雷射室背側的對應插頭。各例中,模 組上兩根約3奴末端錐形接腳將模組導引人精確定位,讓 電員L田匹配。目目匹配連接器如AMP 194242-1型號市 /于自AMP A司(賓州哈里斯堡)。本具體實施例中,連 系用於乂 *2G8伏特、交流伏特、直流獅伏特(電 源供應器出以及共振充電器人)以及若干信號電壓。盲目匹 配連結允許模組移開用於在數秒或數分鐘時間以内服務使 用及更#本具體貫施例中,因模組的輸出電塵係於加,刪 至3M00伏特範圍,故盲目匹配連結未用於整流器模組。 取而代之使用典型高電壓連接器。 饋電至陰極 (提高電感技術) 如第5圖指示且如前文說明,尖峰電容器排組Cp以係 由33個〇·3 nF電容器組成。於電容器底部接地(亦即腔室 頭)’於電容器頂部接到稱做電暈屏障的金屬板。電暈屏障 又連接至陰極,帶有15根金屬桿稱做下水管,金屬桿通過 單件式主絕緣體且栓至陰極514頂部,如第13A圖所示。單 件式絕緣體述於美國專利第6,2〇8,674號,以引用方式併入 此處某些^況下,需要提高脈衝功率電路之高電壓部分 的電感。此種提高可能導致雷射功率持續時間的增加。申 請人決定產生此種較高電感之較佳方法係提供短(例如約1 1 /4吋)豎桿連結cp電容器排組之各電容器以及下水管金屬 桿至電暈板。如此延長Cp與陰極間之電路徑長度,實質上 增加電路之此一部分的電感。電感增加量可藉由選擇豎桿 541777 中 的 方 俾 A7 五、發明説明(27 長度調整。 放電組成元件 第13及13 A⑴圖顯示本發明之較佳具體實施例使用之 改良放電配置細節。此種配置包括申請人稱做扇葉-電介質 電極之電極西己置。此種設計中,陽極54〇包含純端扇葉形電 極542,有電介質間隔件544架設於陽極兩邊(如所示)俾改 進放電區的氣體流動。間隔件附著至陽極支持桿⑽,帶有 螺絲於間隔件各端超出放電區。螺絲讓間隔件與支持桿門 做Μ脹滑脫。陽極為26•辦長、G.439Bf高。底部為ο· 吋寬,頂部為0.141时寬。附著於流動成形陽極支持板546, 有螺絲通過插座,允許電極由其中心位置做差異熱膨服。 陽極係由以銅為主的合金較好為c36_、C954GG或C19400 組成。陰極面形狀係如第13A圖所示。較佳陰極材 料為⑶000。扇葉電介質組態之額外細節示於美國專利 月案第09/768,753號,以引用方式併入此處。此種配置巧 電*沿路548係由錄骨形部件組成,帶有27根肋沿電極⑷ 之=度方向均等間隔,其截面顯示於第13A(1)圖。如前述, 電机迎路係由金屬片材製成’錄骨肋(各自截面維度約為 t x〇.09吋)扭曲,讓各肋之縱向維度係於電流流動 向。 陽極之另一種電介質間隔件設計顯示於第13A2圖 > ^更為均勻。此例中,間隔件更完美匹配流線形陽任 支持杯提供更佳的氣體流動路徑。申請人稱做r快速返 回」扇葉電介質陽極設計。 本紙張尺度適财國規格⑵0Χ^Ϊ75. Description of the invention (26) or the female plug matches the corresponding plug installed on the back side of the laser chamber. In each case, two tapered pins with about 3 slave ends on the module guide the module to accurately locate the person and let the electrician match the field. Mesh-matched connectors such as AMP 194242-1 Model City / Yu Zi AMP A Division (Harrisburg, PA). In this specific embodiment, the connection is used for 乂 * 2G8 volts, AC volts, DC lions volts (out of the power supply and resonance charger) and several signal voltages. The blind matching link allows the module to be removed for service use and more within a few seconds or minutes. In this specific embodiment, because the output dust of the module is in Canada, it is deleted to the 3M00 volt range, so the blind matching link Not used for rectifier modules. Instead, use typical high-voltage connectors. Feeding to the cathode (inductance-enhancing technology) As indicated in Figure 5 and explained earlier, the peak capacitor bank Cp consists of 33 0.3 nF capacitors. Grounding at the bottom of the capacitor (ie, the head of the chamber) is connected to a metal plate called a corona barrier at the top of the capacitor. The corona barrier is connected to the cathode with 15 metal rods called drains. The metal rods pass through the one-piece main insulator and are bolted to the top of the cathode 514, as shown in Figure 13A. The one-piece insulator is described in U.S. Patent No. 6,208,674, which is incorporated herein by reference. In some cases, it is necessary to increase the inductance of the high voltage portion of the pulse power circuit. This increase may lead to an increase in laser power duration. The applicant decided that the better way to generate such a higher inductance is to provide short (for example, about 1 1/4 inch) vertical poles to connect the capacitors of the cp capacitor bank and the metal pipe of the sewer pipe to the corona plate. Prolonging the electrical path length between Cp and the cathode in this way substantially increases the inductance of this part of the circuit. The increase in inductance can be selected by selecting the square 俾 A7 in the vertical bar 541777. V. The description of the invention (27 Length adjustment. The discharge component elements 13 and 13 A⑴) show the details of the improved discharge configuration used in the preferred embodiment of the present invention. This This configuration includes what the applicant calls a fan-dielectric electrode electrode. In this design, the anode 54 includes a pure-end fan-shaped electrode 542, and a dielectric spacer 544 is placed on both sides of the anode (as shown). Improve the gas flow in the discharge area. The spacer is attached to the anode support rod ⑽, with screws at each end of the spacer beyond the discharge area. The screws allow the spacer and the support rod door to expand and slip. The anode is 26. .439Bf high. The bottom is ο · inches wide and the top is 0.141 hours wide. Attached to the flow-formed anode support plate 546, there are screws through the socket, allowing the electrode to do differential thermal expansion from its center position. The anode is mainly copper The alloy is preferably composed of c36_, C954GG, or C19400. The shape of the cathode surface is shown in Figure 13A. The preferred cathode material is CU000. Additional details on the configuration of the fan dielectric are shown in US Patent Month Number 0 No. 9 / 768,753, incorporated herein by reference. This configuration Qiao Dian * along the road 548 series is composed of bone-shaped parts, with 27 ribs evenly spaced along the direction of the electrode 度 = degree, and its cross section is shown in section 13A (1) Figure. As mentioned above, the motor front path is made of metal sheet. The ribs (the cross-section dimensions are about tx 0.09 inches) are twisted, so that the longitudinal dimension of each rib is in the direction of current flow. Another design of the dielectric spacer is shown in Figure 13A2 > ^ is more uniform. In this example, the spacer is more perfectly matched to the streamlined Yang Ren support cup to provide a better gas flow path. The applicant claims that r fast return Fan blade dielectric anode design. This paper is suitable for the country's specifications ⑵0Χ ^ Ϊ7

• ----- (請先閲讀背面之注意事項再填寫本頁) 、可 . :線丨 541777 A7• ----- (Please read the precautions on the back before filling out this page). Yes.: Line 丨 541777 A7

--------- B7__ 五、發明説明(28 ) 帶有快速控制演繹法則之超快波長計 控制脈衝能、波長及頻寬 用於積體電路微影術之先前技藝準分子雷射對雷射束 之芬數做密切規袼規定。典型要求對每個脈衝以及脈衝能 及頻見之回授控制測量脈衝能、頻寬及中心波長。於先前 技藝叙置,脈衝能之回授控制係以逐一脈衝為基準,換言 之,各個脈衝的脈衝能快速測量,結果獲得的資料可用於 控制决繹法則來控制緊接於該脈衝之後的能量。對1,⑻〇 赫茲系統而言,如此表示對次一脈衝的測量及控制耗時少 於1/1000秒。對4000赫茲系統而言需要快4倍速度。控制中 心波長以及測量波長及頻寬之技術述於美國專利第 5,025,455號「光束波長調節系統及方法」以及美國專利第 5,978,394號「準分子雷射波長及系統」。此等專利案以引 用方式併入此處。 波長及頻寬對每個脈衝係以逐一脈衝基準測量,但因 控制中心波長的先前技藝技術耗時數毫秒,典型波長的回 授控制耗時約7亳秒。需要更快速控制。 快速測量與控制射束參數之較佳具體實施例 本發明之較佳具體實施例為可於4,〇〇〇赫茲至6,〇〇〇範 圍操作的準分子雷射系統,伴以極為快速測量雷射束參 數’以及極為快速控制脈衝能及中心波長。用於此種雷射 之射束參數測量及控制說明如後。 本具體實施例使用之波長計類似美國專利第 5,978,394號所述,後文若干說明係擷取自該專利案。 31 本紙張尺度適用中國國家標準(〇}S) A4規格(210X297公釐) 541777 A7 I η·ιιΐΜ " -—-— S7 五、發明説明(29) ' ' ^ 測量射束參數 第14圖顯示較佳波長計單元12〇、絕對波長參考校正單 兀190、及波長計處理器197之佈局圖。 此等單元之光學設備測量脈衝能、波長及頻寬。此等 、丨i用於回技電路,將脈衝能及波長維持於預定限度範圍 内。設備基於來自雷射系統控制處理器的指令而參照原子 參考源自我校準。 如第14圖所示,雷射輸出束交又部分反射鏡17〇,部分 反射鏡通過約95.5%束能作為輸出束33,反射約45%脈衝 能、波長及頻寬測量值。 脈衝能 約4 /〇反射束係由鏡丨7丨反射至能量偵測器1,能量偵 測器172包含極為快速的光二極體69,其可測量以每秒 4,000脈衝速率發生的個別脈衝能。脈衝能約為7·5毫焦 耳,偵測為69的輸出饋至電腦控制器,電腦控制器使用特 力演繹法則來調整雷射充電電壓,基於儲存的脈衝能資料 準確控制未來脈衝之脈衝能,俾限制個別脈衝能以及叢發 脈衝能積分的變化。 線性光二極體陣列 線性光二極體陣列180之感光面細節顯示於第ΐ4Α 圖。陣列為積體電路晶片,包含1024分開光二極體積體電 路以及關聯的樣本及維持讀出電路。光二極體總長度25 6 | 笔米(約1叶)有25微米間距。各個光二極體長5〇〇微米。 光一極體陣列例如可得自若干來源。較佳供應商為濱 ... ....... _ ' - _____ 本紙張尺度適用巾國國家標準(挪)Α4規格(210X297公I) " :~32I 〜--------- B7__ V. Description of the invention (28) Ultra-fast wavelength meter with fast control deduction rule controls pulse energy, wavelength and bandwidth used in prior art excimer mine of integrated circuit lithography The number of laser beams is closely regulated. It is typically required to measure the pulse energy, bandwidth, and center wavelength for each pulse as well as the feedback control of the pulse energy and frequency. In previous techniques, the feedback control of pulse energy is based on pulse by pulse. In other words, the pulses of each pulse can be measured quickly. The data obtained can be used to control the determinants to control the energy immediately after the pulse. For a 1,100 Hz system, this means that the measurement and control of the next pulse takes less than 1/1000 of a second. A 4x speed is needed for a 4000 Hz system. Techniques for controlling the center wavelength and measuring the wavelength and bandwidth are described in US Patent No. 5,025,455 "Beam Wavelength Adjustment System and Method" and US Patent No. 5,978,394 "Excimer Laser Wavelength and System". These patents are incorporated herein by reference. The wavelength and bandwidth are measured on a pulse-by-pulse basis for each pulse system, but due to the prior art techniques of controlling the center wavelength, which took several milliseconds, the feedback control of a typical wavelength took about 7 亳 seconds. Need for faster control. Preferred embodiments for rapid measurement and control of beam parameters A preferred embodiment of the present invention is an excimer laser system that can operate in the range of 4,000 Hz to 6,000, with extremely fast measurements Laser beam parameters' and extremely fast control of pulse energy and center wavelength. The measurement and control of beam parameters for such lasers are described below. The wavelength meter used in this embodiment is similar to that described in US Patent No. 5,978,394, and several descriptions are taken from this patent case. 31 This paper size applies the Chinese national standard (〇) S) A4 specification (210X297 mm) 541777 A7 I η · ιιΐΜ " --------- S7 V. Description of the invention (29) '' ^ Measuring beam parameters Figure 14 A layout diagram of a preferred wavelength meter unit 120, an absolute wavelength reference correction unit 190, and a wavelength meter processor 197 is shown. The optical equipment of these units measures pulse energy, wavelength and bandwidth. These and i are used in the return circuit to maintain the pulse energy and wavelength within the predetermined limits. The device refers to the atom based on instructions from the laser system control processor. The reference comes from my calibration. As shown in Fig. 14, the laser output beam crosses part of the mirror 17o, and the part of the mirror passes about 95.5% of the beam energy as the output beam 33, and reflects about 45% of the pulse energy, wavelength, and bandwidth measurement values. The pulse energy of about 4/0 reflected beam is reflected from the mirror 丨 7 丨 to the energy detector 1, the energy detector 172 contains an extremely fast photodiode 69, which can measure individual pulse energy occurring at a rate of 4,000 pulses per second . The pulse energy is about 7.5 millijoules. The output detected as 69 is fed to the computer controller. The computer controller uses the special force deduction rule to adjust the laser charging voltage. Based on the stored pulse energy data, it accurately controls the pulse energy of future pulses.俾 Limit the change in the energy of individual pulses and the integration of burst pulses. The linear photodiode array The details of the photosensitive surface of the linear photodiode array 180 are shown in Fig. 4A. The array is an integrated circuit chip that contains 1024 separate photodiode volumetric circuits and associated samples and sustaining readout circuits. The total length of the photodiode is 25 6 | pen meters (approximately 1 leaf) have a spacing of 25 microns. Each photodiode is 500 micrometers long. Photo-polar arrays are available, for example, from several sources. The preferred supplier is Bin .......... _ '-_____ This paper size is applicable to the national standard (Norwegian) A4 specification (210X297 male I) ": ~ 32I ~

,一吁 (請先閲讀背面之注意事項再填寫本頁) —裝丨 線丨 541777 A7 B7 五、發明説明(30 ) '— 松公司。較佳具體實施例中,發明人使用型號 S3903-1024Q,可以FlFO基礎以高達4χ1〇ό像素/秒之速率讀 取,其中可以4,000赫茲或以上的速率完成⑺以像素掃描。 PDA設計用以2χ1〇6像素/秒操作,但申請人發現可計時更 快速操作,/亦即高達4xl〇6像素/秒。用於高於4,〇〇〇赫兹的 脈衝速率,中請人可使用相同PDA,但通f每次掃描只讀 取部分(例如60%)像素。 粗略波長測量 約4°/°通過鏡171之射束係由鏡173反射通過裂隙177至 在兄174至叙175、返回鏡174以及反射至紅外線光柵176。 射束藉透鏡178準直,透鏡178之焦距為458 4毫米。由光柵 176反射光通過透鏡178返回,再度由鏡174、175以及再次 174反射,然後由鏡179反射且聚焦於1〇24像素線性光二極 體陣列180左方於像素600至像素95〇區域,如第14B圖上部 顯不(像素0-599保留用於精密波長測量及頻寬)。雷射束於 光一極體陣列之空間位置為輸出雷射束相對名目波長的粗 略測里值。例如如第14B圖所示,於約193 35〇微微米波長 範圍的光將聚焦於像素7 5 0及其附近。 粗略波長計算 於波長計模組120之粗略波長光學裝置於光二極體ι8〇 左側產生約0.25耄米χ3毫米之矩形影像。丨〇或丨丨個經照明 的光一極體將產生與接收照明強度成比例的信號(如第14c 圖才曰示)’信號由波長計控制器197的處理器讀取及數位 化。使用此項資訊及内插法,演繹法則控制器197計算影像 本紙張尺度適用中國國家標準(CNs) A4規格(210X297公爱) 33 C請先閱讀背面之注意事項再填寫本頁)Yiyi (please read the precautions on the back before filling this page) —Installation 丨 Thread 541777 A7 B7 V. Invention Description (30) '— Song Company. In a preferred embodiment, the inventor uses the model S3903-1024Q, which can be read at a rate of up to 4 × 10 pixels / second on the basis of FlFO, wherein pixel scanning can be performed at a rate of 4,000 Hz or more. The PDA is designed to operate at 2x106 pixels / second, but the applicant has found that it can be timed to operate faster, that is, up to 4x106 pixels / second. For pulse rates higher than 4,000 Hz, you can use the same PDA, but you can only take a portion (for example, 60%) of pixels per scan. Rough Wavelength Measurement The beam passing through the mirror 171 at about 4 ° / ° is reflected by the mirror 173 through the slit 177 to 174 to 175, the return mirror 174, and reflected to the infrared grating 176. The beam is collimated by a lens 178, which has a focal length of 458 4 mm. The light reflected by the grating 176 returns through the lens 178, is reflected again by the mirrors 174, 175, and 174 again, and is then reflected by the mirror 179 and focused on the left of the 1024-pixel linear light-diode array 180 in the area of pixels 600 to 9550. As shown in the upper part of Figure 14B (pixels 0-599 are reserved for precise wavelength measurement and bandwidth). The spatial position of the laser beam in the photo-polar array is a rough measurement of the output laser beam relative to the nominal wavelength. For example, as shown in FIG. 14B, light in a wavelength range of about 193,350 μm will be focused on the pixel 750 and its vicinity. Coarse Wavelength Calculation The coarse-wavelength optical device in the wavelength meter module 120 produces a rectangular image of about 0.25 mm x 3 mm on the left side of the photodiode ι80.丨 〇 or 丨 丨 An illuminated photodiode will generate a signal proportional to the intensity of the received illumination (shown in Figure 14c). The signal is read and digitized by the processor of the wavelength meter controller 197. Using this information and interpolation method, the deduction rule controller 197 calculates the image. The paper size applies the Chinese National Standard (CNs) A4 specification (210X297 public love). 33 C (Please read the precautions on the back before filling this page)

、可I :線丨 541777 五 發明說明 31 中心位置。值此位置(以像素測量)使用二校準係數被轉換成粗波長 ,獲得位置與波長間的直線關係。校準係數係參照原子 ’泛長來源決定,說明如後。例如影像位置與波長間之關係 為如下演繹法則··λ 一(2·3微微米/像素)P+191,625微微米 此處P =粗略影像中心位置 ^另外若有所需經由加上第二次冪項如「+OP2」可提言 額外精度。 N 精密波長測量 如第14圖所示’約95%通過鏡173之雷射束被反射偏離 、兄1 82通過透鏡丨83至標準具總成丨84輸入端的漫射器(較好 士後即名矛冉「改良標準具」說明為繞射漫射器)。由標準具 ⑻送出的射束由458·4毫米焦距透鏡聚焦於標準具總成, 如第14圖所不,反射離開二鏡之後,產生干涉邊帶於線性 光二極體陣列1 80中央及右側。 ^光譜計須實質上即時測量波長及頻寬。因雷射重複率 頁為4,〇〇〇赫茲至赫茲,故須使用準石萑但非運算密集 的演繹法則,#以經濟且精簡的處理電子裝置達成預定性 能。因此運算演繹法則較好使用整數而非浮動點數學,數 學運算較好為有效運算(未使用平方根、正弦、對數等)。 現在說明本較佳具體實施例使用之較佳演繹法則之特 定細節。第14D圖為帶有5個尖峰的曲線,表示藉線性光二 極體陣列180測量的典型標準具邊帶信號。中央尖峰高度繪 本紙張尺度·中__準(CNS)A^T^97公楚)May I: Line 丨 541777 V. Description of the invention 31 Center position. This position (measured in pixels) is converted to a coarse wavelength using two calibration coefficients to obtain a linear relationship between position and wavelength. The calibration coefficient is determined with reference to the source of the atom's pan-length, which will be described later. For example, the relationship between image position and wavelength is the following deduction rule: λ-(2.3 micron / pixel) P + 191, 625 micron where P = rough image center position ^ In addition, if necessary The second power term such as "+ OP2" can be used to mention extra precision. N Precision wavelength measurement is shown in Figure 14. 'Approximately 95% of the laser beam passing through the mirror 173 is reflected and deviated. Brother 1 82 passes through the lens. 83 to the etalon assembly. The famous spear Ran "improved etalon" is described as a diffraction diffuser). The beam sent by the etalon is focused by the 458.4mm focal length lens on the etalon assembly. As shown in Figure 14, after the reflection leaves the second mirror, an interference sideband is generated at the center and right side of the linear light diode array 1 80. . ^ The spectrometer shall measure the wavelength and bandwidth substantially in real time. Due to the laser repetition rate page of 4,000 Hz to Hertz, it is necessary to use a quasi-stone but not computationally intensive deduction rule. # Achieve predetermined performance with economical and streamlined processing of electronic devices. Therefore, the arithmetic deduction rule is better to use integers rather than floating-point math, and mathematical operations are better to be effective (no square root, sine, logarithmic, etc.). Specific details of the preferred deduction rule used in this preferred embodiment will now be described. FIG. 14D is a curve with 5 spikes, which represents a typical etalon sideband signal measured by the linear photodiode array 180. The height of the central peak is drawn on this paper.Medium__ 准 (CNS) A ^ T ^ 97 公 楚)

(請先閱讀背面之注意事項再填寫本頁) 、可 線- |裝· A7 —---—-___!Z_ 五、發明説明(32 ) ^ * 衣比其匕大峰更低。隨著進入標準具的光的波長不同,中 2大峰將升降’偶爾變成零。此種形態造成中央尖峰不適 =用於測里;^ i。其它尖峰將回應於波長的改變移向或移 =中心二長,故尖峰位置可用來決定波長,而寬度可測量 田射頻見。個別標示資料窗的二區顯示於第HD圖。資料 -之位置讓最接近中央尖峰的邊帶用於分析。但當波長改 5動邊帶太靠近中央尖峰(造成失真結果導致錯誤)時, 第一尖峰係於資料窗外側,但第二最接近尖峰係於資料窗 内側γ軟體造成控制模組197的處理器使用第二尖峰。相反 地,當波長位移移動電流尖峰於資料窗外側,遠離中央尖 夸時’軟體將跳至資料窗内部的内邊帶。資料窗也顯示於 弟14B圖。 、用於對重複率鬲達4,000赫茲至6,〇〇〇赫茲之各脈衝極 為夬速運^頻覓,較佳具體實施例使用第15圖之硬體。硬 體包括亞利桑納州鳳凰城摩托羅拉公司供應的型號MpC 823微處理器_ ;加州聖荷西亞特拉㈧公司供應的Ep 6016QC240可程式邏輯裝置4〇2 ;執行及資料記憶體排組 4〇4;特殊極快速RAM4〇6用於暫時以表格形式儲存光二極 體陣歹j資料,第二4X1024像素RAM記憶體排組4〇8係呈記 憶體緩衝器操作;以及類比數位轉換器410。 如美國專利第5,025,446及5,978,394號之說明,先前記 憶裝置要求分析大量代表光二極體陣列i 8〇標準具i 84產生 的干涉邊帶之PDA資料像素強度資料,俾決定中線波長及 頻覓。此種處理過程即使使用電腦處理器也相當費時,原 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 A7 B7 五、發明説明(33 ) 一 因在於需要分析約400像素強度值來尋找及說明各波長及 頻寬計算的標準具邊帶。本發明之較佳具體實施例經由設 置處理器可大為加速此項處理,處理器係用於找出並聯計 算波長資訊之處理器操作之主要邊帶。 基本技術係使用可程式邏輯裝置4〇2,當像素資料產生 時由PDA像素資料連續產生邊帶資料表。邏輯裝置4〇2也識 別何組邊帶資料代表感興趣的邊帶資料。然後當需要計算 中心波長及頻寬時,微處理器單純由識別的像素拾取資 料,汁异中心波長及頻寬之要求值。此項處理可縮短微處 理器計算時間達約1 〇之因數。 計算中心波長及頻寬之特定步驟如後: 1) PDA 180設定為於2·5百萬赫茲操作,PDA 18〇由處 理斋400指令以4,000赫茲掃描速率由像素^至6⑼收集資 料,以及以100赫茲速率讀取像素1至1028。 2) P D A 1 8 0產生的類比像素強度資料藉類比/數位轉換 器410轉成數位8位元組(0至255) ’數位資料暫時以表示光 二極體陣列1 80各個像素強度的8位元值儲存於ram緩衝 器 408。 3) 可程式邏輯裝置402以幾乎即時基準尋找邊帶,連續 分析送出RAM緩衝器408的資料,儲存全部資料於RAM記 憶體406,識別各脈衝邊帶,對各脈衝產生邊帶表且儲存表 格於RAM 406,以及識別用以對各脈衝進一步分析一組最 佳二邊帶。邏輯裝置402使用之技術如後: A)可程式邏輯裝置402分析由緩衝器4〇8送出的各個 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 36 (請先閲讀背面之注意事項再填寫本頁) -裝- :線- 541777 A7 --—____B7 五、發明説明(34 ) ^ ' 像素值,判定其是否超過強度臨限值,同時追縱最低像素 強度值。若超過臨限值,則指示邊帶尖峰已經來臨。可程 式邈輯裝置識別高於臨限值的第一像素為「上升緣」像素 、'扁说’儲存於该「上升緣」像素前方多個像素的最低像素 值。此像素強度值識別為邊帶「最低值」。 B) 然後可程式邏輯裝置4〇2監視隨後像素強度值,搜尋 邊帶尖锋。藉由追縱最高強度值監視直到強度降至低於臨 限值強度為止。 C) 當找到低於臨限值之像素時,可程式邏輯裝置識別 為下降緣像素編號,且儲存其最大值。然後可程式邏輯裝 置由下降緣像素編號減上升緣像素編號計算邊帶「寬度」。 D) 上升緣像素編號、最大邊帶強度、最低邊帶強度及 邊帶覓度4值儲存於RAM記憶體排組4〇6邊帶區段的圓形 表。表示高達15邊帶的資料對各脈衝可儲存代表高達^邊 帶的資料,但大部分脈衝於二資料窗只產生2至5個邊帶。 E) 可程式邏輯裝置402也經過程式規劃對各脈衝識別 各脈衝的「最佳」二邊帶。進行方式係識別完全於〇至199 ®的隶末邊帶以及完全於4〇〇至599窗的第一邊帶。 一脈衝後(1)收集像素資料,以及(2)形成該脈衝邊帶圓 形表所需總時間值約200微秒。本技術主要省時優勢在於搜 尋邊帶係在邊帶資料被讀取、數位化以及儲存的同時進 行。旦對特疋脈衝識別二最佳邊帶,微處理器4〇〇由RAM 記憶體排組406於二邊帶區獲得原始像素資料,由該資料計 算頻寬及中心波長。計算如後: 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱·)(Please read the precautions on the back before filling out this page), can be line-| equipment · A7 —--- —- ___! Z_ V. Description of the invention (32) ^ * The clothes are lower than its daggers. As the wavelength of the light entering the etalon is different, the medium 2 large peak will rise and fall 'occasionally to zero. This form causes the central peak to be uncomfortable = used for measuring; ^ i. The other spikes will shift towards or shift in response to the change in wavelength = the center is two long, so the position of the spikes can be used to determine the wavelength, and the width can be measured. The second area of the individually marked data window is shown in the HD picture. Data-The location allows the sideband closest to the central spike to be used for analysis. However, when the wavelength is changed to 5, the sideband is too close to the central peak (resulting in distortion results in errors), the first peak is on the outside of the data window, but the second closest peak is on the inside of the data window. The software causes the processing of the control module 197. The device uses the second spike. Conversely, when the wavelength shift moves the current spike outside the data window, away from the center tip, the software will jump to the inner sideband inside the data window. The data window is also shown in Figure 14B. The pulse poles for repetition rates ranging from 4,000 Hz to 6,000 Hz are fast-tracked. The preferred embodiment uses the hardware of FIG. 15. The hardware includes model MpC 823 microprocessor supplied by Motorola, Phoenix, Arizona; Ep 6016QC240 programmable logic device supplied by San Jose, California, California; 402; execution and data memory bank 4. 4; The special extremely fast RAM406 is used to temporarily store the data of the photodiode array in the form of a table. The second 4X1024 pixel RAM memory bank 408 operates as a memory buffer; As described in U.S. Patent Nos. 5,025,446 and 5,978,394, the previous memory device required analysis of a large number of PDA data pixel intensity data representing the interference sideband generated by the photodiode array i 80 etalon i 84 to determine the center line wavelength and frequency search. This process is quite time-consuming even if a computer processor is used. The original paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 541777 A7 B7 V. Description of the invention (33) One reason is that it needs to analyze about 400 pixel intensity values Find and explain the etalon sidebands for each wavelength and bandwidth calculation. The preferred embodiment of the present invention can greatly speed up this process by setting up a processor, which is used to find the main sideband of the processor operation for computing wavelength information in parallel. The basic technology is to use a programmable logic device 402. When the pixel data is generated, a sideband data table is continuously generated from the PDA pixel data. The logic device 40 also recognizes which set of sideband data represents the sideband data of interest. Then, when it is necessary to calculate the central wavelength and bandwidth, the microprocessor simply picks up the data from the identified pixels, and the required values of the central wavelength and bandwidth are different. This processing can reduce the calculation time of the microprocessor by a factor of about 10. The specific steps for calculating the center wavelength and bandwidth are as follows: 1) PDA 180 is set to operate at 2.5 million hertz, PDA 180 is processed by processing 400 instructions at a scan rate of 4,000 Hz from pixels ^ to 6⑼, and Pixels 1 to 1028 are read at 100 Hz. 2) The analog pixel intensity data generated by PDA 1 8 0 is converted to digital 8-bits by analog / digital converter 410 (0 to 255) 'The digital data is temporarily represented as 8-bits of each pixel intensity of the photodiode array 1 80 The value is stored in the ram buffer 408. 3) Programmable logic device 402 searches for sidebands on an almost real-time basis, continuously analyzes the data sent to RAM buffer 408, stores all data in RAM memory 406, identifies each pulse sideband, generates a sideband table for each pulse, and stores the table In RAM 406, and identify a set of best two sidebands for further analysis of each pulse. The technology used by the logic device 402 is as follows: A) Programmable logic device 402 analyzes each paper size sent by the buffer 408. It is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 36 (Please read the (Please note this page, please fill in this page again)-Installation-: Line-541777 A7 ---____ B7 V. Description of the invention (34) ^ 'Pixel value, determine whether it exceeds the intensity threshold, and track the minimum pixel intensity value. If the threshold is exceeded, it indicates that a sideband spike has arrived. The programmable editing device recognizes that the first pixel above the threshold is the "rising edge" pixel, and the "bottom" is the lowest pixel value stored in multiple pixels in front of the "rising edge" pixel. This pixel intensity value is identified as the "lowest value" of the sideband. B) The programmable logic device 402 then monitors the subsequent pixel intensity values and searches for sharp edges. Monitor by tracking the highest intensity value until the intensity drops below the threshold intensity. C) When a pixel below the threshold is found, the programmable logic device recognizes the pixel number of the falling edge and stores its maximum value. The programmable logic device then calculates the "width" of the sideband by subtracting the rising edge pixel number from the falling edge pixel number. D) The rising edge pixel number, maximum sideband strength, minimum sideband strength, and sideband search 4 values are stored in the circular table of the 406 sideband section of the RAM memory bank group. Data representing up to 15 sidebands can store data representing up to ^ sidebands for each pulse, but most pulses generate only 2 to 5 sidebands in the two data windows. E) The programmable logic device 402 also identifies the "best" sideband of each pulse for each pulse through programming. This is done by identifying the end bands completely from 0 to 199 ® and the first side bands completely from 400 to 599 windows. After one pulse, (1) the pixel data is collected, and (2) the total time required to form the pulse sideband circular table is about 200 microseconds. The main time-saving advantage of this technology is that the search sideband is performed while the sideband data is read, digitized, and stored. Once the second best sideband is identified for the special pulse, the microprocessor 400 obtains the original pixel data from the second sideband area from the RAM memory bank 406, and calculates the bandwidth and center wavelength from this data. The calculation is as follows: This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 Public Love ·)

(請先閱讀背面之注意事項再填寫本頁) tr.....1線: 541777 A7 B7 五、發明説明(35 標準具邊帶之典型形狀顯示於第14D圖。基於可程式 避輯衣置402之先前工作,微處理器4〇〇識別最大值於約像 素180之邊帶以及最大值於約像素45〇之邊帶。環繞二最大 值之像素資料係藉微處理器400分析俾界定邊帶形狀及位 置。進行如後: A)半最大值係由邊帶最大值減邊帶最小值,差值除以 2且將結果加至邊帶最小值。對二邊帶個別上升緣以及個別 下卩牛緣而g ’二像素具有高於半最大值最接近數值以及低 於半最大值最接近數值。然後對各案例,微處理器於二像 素值間外推而界定D1及D2端點,如第18B圖所示,精度為 1/32像素。由此等值,決定圓邊帶之内徑D1及外徑D2。 精密波長計算 精密波長計算係使用粗略波長測量值以及D丨及D2測 量值進行。 波長基本方程式為: λ = (2*n*d/m)cos(R/f) ⑴ 此處 λ為波長,單位為微微米, η為標準具之内折射率,約為1〇〇〇3, d為標準具間隔,對KrF雷射而言為約1542微米,對ArF 雷射而言為約934微米,控制於+/_i微米, m為次冪,邊帶尖峰波長整數值約等於1244〇, R為邊帶半徑,130至280 PDA像素,一個像素=25微 米, 本紙張尺度家標準_ M規格⑵幻 38 (請先閲讀背面之注意事項再填寫本頁) _裝_ 、可— -線丨 541777 m A7 B7 五、發明説明(36 f為透鏡至PDA平面之焦距。 展開cos項’拋棄太小而可忽略的高次冪項獲得: λ = (2*n*d/m)[l-(l/2)(R/f)2] (2) 以直徑D=2*R重寫方程式獲得: λ = (2*n*d/m)[l-(l/8)(D/f)2] (3) 波長計的主要工作係由〇計算λ。需要知道f、η、d及 因η及d為標準具特性,將^與d組合成為單一校正常數 定名為ND。考慮f為另一校正常數定名為FD,以像素為單 位匹配D單位獲得純比值。整數次冪爪係根據選用的波長以 及邊帶對改變。m係使用粗略邊帶波長決定,其對該項用 途足夠精確。(Please read the precautions on the back before filling this page) tr ..... 1 line: 541777 A7 B7 V. Description of the invention (35 The typical shape of the side band of the etalon is shown in Figure 14D. Based on the programmable avoidance clothing In the previous work of setting 402, the microprocessor 400 identified a sideband with a maximum value of about 180 pixels and a sideband with a maximum value of about 45 pixels. The pixel data surrounding the two maximum values was defined by the microprocessor 400 analysis. The shape and position of the sideband are as follows: A) The half-maximum is the maximum value of the sideband minus the minimum value of the sideband, the difference is divided by 2 and the result is added to the minimum value of the sideband. For the individual rising edges and individual lower yak margins of the two sidebands, g 'two pixels have the closest value above the half-maximum value and the closest value below the half-maximum value. Then for each case, the microprocessor extrapolates between the two pixel values to define the D1 and D2 endpoints, as shown in Figure 18B, with an accuracy of 1/32 pixels. From these equivalent values, the inner diameter D1 and the outer diameter D2 of the rounded band are determined. Precision wavelength calculation Precision wavelength calculation is performed using rough wavelength measurements and D 丨 and D2 measurements. The basic wavelength equation is: λ = (2 * n * d / m) cos (R / f) ⑴ where λ is the wavelength in micrometers, and η is the internal refractive index of the etalon, which is about 1000 , D is the etalon interval, about 1542 microns for KrF lasers, about 934 microns for ArF lasers, controlled at + / _ i microns, m is a power, and the integer value of the sideband peak wavelength is approximately 1244 〇, R is the sideband radius, 130 to 280 PDA pixels, one pixel = 25 microns, this paper standard home standard _ M specifications ⑵ 幻 38 (Please read the precautions on the back before filling this page) _ 装 _ , 可 — -Line 丨 541777 m A7 B7 V. Description of the invention (36 f is the focal distance from the lens to the PDA plane. Expand the cos term 'abandoning too small and negligible higher power terms to obtain: λ = (2 * n * d / m) [l- (l / 2) (R / f) 2] (2) Rewrite the equation with diameter D = 2 * R to obtain: λ = (2 * n * d / m) [l- (l / 8) ( D / f) 2] (3) The main work of the wavelength meter is to calculate λ from 0. It is necessary to know that f, η, d and η and d are etalon characteristics, and combine ^ and d to form a single correction constant named ND. Consider f as another correction constant named FD, match D units in pixels to obtain the pure ratio The integer power jaw system according to wavelength selection, and its sidebands Use .m accurate enough to change the system a coarse wavelength side band decided on the.

有關此等方程式之好處為全部大數目皆為正值。WCM 微控制器可計算此值而同時維持32位元精度。發明人偏好 以方括弧項作為FRAC。 FRAO[l-(l/8)(D/FD)2] ⑷ 於内部FRAC係以無符號的32位元值表示,而其根係 指向最有效位元左方。FRAC經常略小於1,因而獲得最大 精度。對{560〜260}像素之D範圍而言,pRAC係於[buojgj 至[1-25E-6]之範圍。 當載入ND計算值時,波長計計算内部無符號的64位元 值,定名2ND=2*ND,内部波長單位亳微微米(fm)=1〇A_15 米=0_001微微米。波長Λ表示為精密波長之fwl,單位也 疋宅微微米。以此等變數重新列出方程式: FWL = FRAC*2ND/m (5) 39The benefit of these equations is that all large numbers are positive. The WCM microcontroller can calculate this value while maintaining 32-bit accuracy. Inventors prefer to use square brackets as FRAC. FRAO [l- (l / 8) (D / FD) 2] 于 Internally, the FRAC system is represented by an unsigned 32-bit value, and its root system points to the left of the most significant bit. FRAC is often slightly less than 1 and therefore achieves maximum accuracy. For the D range of {560 ~ 260} pixels, pRAC is in the range of [buojgj to [1-25E-6]. When the calculated ND value is loaded, the wavelength meter calculates the internal unsigned 64-bit value. The name is 2ND = 2 * ND, and the internal wavelength unit is 亳 micron (fm) = 10A_15m = 0_001 micron. The wavelength Λ is expressed as fwl of the precise wavelength, and the unit is also a micron. Restate the equation with these variables: FWL = FRAC * 2ND / m (5) 39

本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 541777 五、發明説明(37) 异術處理FRAC之根點位移,獲得FWL(單位毫微微米) ------—— (梦先閱讀背面之注意事项再填寫本頁) 帶入方程式,插人已知粗略波長定名CWL(也是以毫微微米 為單位)解除m : m=最接近整數(FRAC*2ND/CWL) (6) 取最近的整數是等於於老舊方案加或減FSRs,直到達 到最接近粗略波長的精密波長位置。經由解除方程式(4) 然後方程式(6)然後方程式(5),求出波長。於内及外直徑分 開計算WL。平均為線中心波長,差為線寬。 頻寬計算 雷射頻覓计异為(λγλ!)/^。應用固定校正因數而考慮 加至雷射真正頻寬的標準具尖峰特性寬度。於數學上反旋 演繹法則係由測量得的寬度去除標準具的特性寬度,但太 過運算密集,因此扣除固定校正因數△ λ e,可獲得充分 準確度。因此頻寬為·· Δ λ = [(〇2-〇!)/2]-Δ λ g :線- △ λ 6係依據標準具規格以及真正雷射頻寬決定。典 型用於此處用途係於0.1-1微微米範圍。 改良標準具 本具體實施例利用改良標準具。習知標準具架設方案 典型採用彈性體安裝光學元件於周圍結構,侷限光學元件 的位置,但將對元件的施力減至最低。常用於此項目的之 化a物為室溫可硫化聚石夕氧(RTV)。但此種彈性體放出的 夕種有機蒸氣可能沉積於光學表面而使其性能低劣。為了 延長標準具的性能壽命,希望將標準具架設於不含彈性體 541777 A7 B7 五、發明説明(38 ) 化合物的密封包圍體内部。 (請先閲讀背面之注意事項再填寫本頁) 較佳具體實施例包括改良之標準具總成,於第14及 14E圖顯示於184。顯示於第14G圖之融合氧化矽標準具79 係由有凸緣81的頂板80及底板82組成,二板係由特製等級 的融合氧化矽製成。標準具係設計成當以折射率1.0003及 精度等於或大於25之氣體包圍時,可產生邊帶具有於 193.35奈米之自由光譜範圍20.〇〇微微米。有超低熱膨脹的 三個融合氧化矽間隔件83分開各板,間隔件厚934微米±1 微米。如此使用光學裝置製造業界人士眾所周知的技術藉 光學接觸將標準具夾持在一起。標準具内側面的反射比各 自約88%,外表面為抗反射塗層。標準具之透射約為5〇0/〇。 -、?τ— :線丨 標準具79只利用重力而於鋁殼體84維持定位,三個低 力彈簧86朝向三個襯墊(圖中未顯示)壓迫凸緣,但位於指 標85指示於凸緣8 1底緣下方120度中心徑向位置。沿凸緣81 頂緣只有0.004吋於87的餘隙可確保標準具約略留在適當 位置。如此密切公差匹配也可確保安裝時若有任何震動或 衝擊移轉到標準具系統,光學組成元件與殼體接觸點間的 相對速度將維持於最低。標準具總成184之其它光學組成元 件包括漫射器88,窗89以及焦距458.4毫米之聚焦透鏡90。 >更射器8 8可為標準具上游常用的標準先前技藝漫射 器’用來產生標準具適當操作需要的多種入射角。先前技 藝’哭射為之問題為通過漫射器約9 〇 %光非於有用角度,結 果未聚焦於光二極體陣列。但浪費的光增加光學系統的熱 量,促成光學表面的劣化。This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public love) 541777 V. Description of the invention (37) The root point displacement of FRAC is processed differently to obtain FWL (unit nanometer) ---------- (Dream first read the notes on the back before filling in this page) Bring in the equation and insert the known rough wavelength named CWL (also in nanometers). Remove m: m = closest integer (FRAC * 2ND / CWL) ( 6) The nearest whole number is equal to the old scheme plus or minus FSRs until the precise wavelength position closest to the rough wavelength is reached. The wavelength is obtained by canceling equation (4), then equation (6), and then equation (5). Calculate the WL separately from the inner and outer diameters. The average is the line center wavelength and the difference is the line width. Bandwidth calculation The difference between thunder and radio frequency is (λγλ!) / ^. Apply a fixed correction factor to consider the etalon spike characteristic width added to the true bandwidth of the laser. Mathematically, the reverse rotation deduction rule is to remove the characteristic width of the etalon from the measured width, but it is too computationally intensive, so subtracting the fixed correction factor △ λ e can obtain sufficient accuracy. Therefore, the bandwidth is Δ λ = [(〇2-〇!) / 2] -Δ λ g: line-Δ λ 6 is determined according to the standard of the etalon and the true radio frequency bandwidth. Typical uses for this purpose are in the range of 0.1-1 micron. Improved etalon This embodiment uses an improved etalon. Conventional etalon erection solutions Typically use elastomers to mount optical components on the surrounding structure, limiting the position of the optical components, but minimizing the force on the components. The chemical compound commonly used in this project is room temperature vulcanizable polylithium oxygen (RTV). However, the organic vapours emitted by such elastomers may be deposited on optical surfaces, resulting in poor performance. In order to extend the performance life of the etalon, it is desirable to set the etalon inside a sealed enclosure that does not contain an elastomer 541777 A7 B7 V. Description of the invention (38). (Please read the notes on the back before filling out this page.) The preferred embodiment includes an improved etalon assembly, shown in Figures 14 and 14E at 184. The fused silica etalon 79 shown in Figure 14G is composed of a top plate 80 and a bottom plate 82 with flanges 81, and the second plate is made of a special grade of fused silica. The etalon system is designed to generate a sideband with a free spectral range of 20,000 micrometers at 193.35 nm when surrounded by a gas having a refractive index of 1.0003 and an accuracy equal to or greater than 25. Three fused silica spacers 83 with ultra-low thermal expansion separate the plates, and the spacers are 934 microns ± 1 microns thick. Thus, techniques well known to those in the optical device manufacturing industry are used to hold the etalons together by optical contact. The reflection ratio of the inner surface of the etalon is about 88%, and the outer surface is anti-reflective coating. The transmission of the etalon is about 5000/0. -、? τ—: Line 丨 The etalon 79 uses gravity to maintain positioning on the aluminum casing 84. Three low-force springs 86 press the flanges toward the three pads (not shown), but the indicator 85 is located The radial position of the center of the flange 8 1 is 120 degrees below the bottom edge. There is only 0.004 inch to 87 clearance along the top edge of flange 81 to ensure that the etalon stays in place approximately. Such close tolerance matching can also ensure that if any vibration or impact is transferred to the etalon system during installation, the relative speed between the optical component and the contact point of the housing will be kept to a minimum. Other optical components of the etalon assembly 184 include a diffuser 88, a window 89, and a focusing lens 90 with a focal length of 458.4 mm. > The emitter 88 may be a standard prior art diffuser commonly used upstream of the etalon to generate a variety of angles of incidence required for proper operation of the etalon. The problem with the prior art technique is that about 90% of the light passing through the diffuser is not at a useful angle, and the result is not focused on the photodiode array. But the wasted light increases the heat of the optical system and contributes to the degradation of the optical surface.

541777 A7 B7 五、發明説明(39 ) "~ 、 遠更佳具體實施例中,使用繞射透鏡陣列作為漫射器 88。使用此種類型之漫射器,於繞射透鏡陣列產生一種圖 樣,該圖樣徹底散射光但只在約5度的角度以内。結果^ 90%落至標準具的光以有用角度人射,遠更大比例二射於 標準具的光最終藉光二極體陣列偵測。結果為入射於標準 具的光大減,因而大為延長光學組成元件壽命。申請人估 計入射光可降至低於先前技藝之5%或1〇%,而有相等光於 光二極體陣列。 使用繞射漫射器之較佳準直 第14H圖顯示較佳具體實施例讓通過標準具光強度進 步減少的結構。本具體實施例類似前文討論之具體實施 例。來自鏡182之樣本光束(約15亳米χ3毫米)向上通過會聚 透鏡400,然後藉透鏡402重新準直。光束現在已經準直, 維度縮小至約5毫米xl毫米,通過標準具殼體窗4〇4,然後 通過繞射漫射元件406,元件406於本案例(用於ArF雷射) 為阿拉巴馬州漢茲維爾曼斯(Mems)光學公司供應的繞射 漫射元件。元件的部件編號為D023-193,將任一種截面配 置的任何入射準直光束中之實質全部193奈米光轉成於第 一方向展開於2度以及垂直第一方向及第二方向於4度展開 的光束。然後透鏡410「聚焦」展開光束於覆蓋光二極體陣 列180之矩形圖樣上,如第14圖所示。光二極體陣列之主動 區覓約0.5毫米,長約25·6毫米,透鏡410形成的點圖樣為 約15毫米χ30毫米。繞射漫射元件徹底混合光束的空間組 成分量,但實質維持全部光束能於2度及4度限度範圍内, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) 42 ;·------U——r: (請先閲讀背面之注意事项再填寫本頁) 、一t — :線— 541777 A7 B7 五、發明説明(4〇 讓通過標準具的光實質減少且可有效利用。讀者了解通過 標準具光束能的進一步減少可藉縮小光二極體陣列之短維 度的點圖樣貫現。但進一步縮小至小於1 5亳米,將讓光學 對準、交知更困難。因此設計師應考慮點圖樣之大小須做折 衷。 另一種設計用於於約248_327奈米操作的KrF.射系統 中,提供類似設計用以調整波長。本具體實施例中,透鏡 400之焦距約為50亳米(透鏡為美樂葛歐(MeUes GH〇t)公司 部件編號OILQP001)。準直透鏡4〇2有焦距_2〇亳米(Ενι雷 射公司部件編號PLCC_1〇(M〇3_uv)。繞射漫射元件 為曼斯光學公司部件編號D023-248。本具體實施例中以及 ArF具體實施例中,二透鏡間距係以間隔件416而適當定 位。申请人估計於2000赫茲操作之雷射,通過標準具之雷 射束能約為10亳瓦,不足以於標準具造成顯著熱問題。 其它較佳具體實施例中,雷射束將來到透鏡4〇〇與4〇2 間的焦點。本例之適當透鏡須使用眾所周知的光學技術選 擇。 脈衝能及波長之回授控制 基於前文對各脈衝之脈衝能的測量,控制隨後脈衝之 脈衝能俾維持預定脈衝能,也維持特定數目脈衝之預定總 積分劑量,全部述於美國專利第6,〇〇5,879號「準分子雷射 之脈衝能控制」,以引用方式併入此處。 雷射波長可於回授配置使用波長測量值以及先前技藝 已知技術例如美國專利第5,978,394號已知技術控制,「準 本紙張尺度翻中關_準(⑽機格(2歌297錄) ------—— (請先閲讀背面之注意事嗔再填寫本頁) 、一叮 -線- 五、發明説明(41 刀子雷射波長糸統」,也以弓丨 W用方式併入此處。申請人晚近 開發波長微調技術,其利用 I電驅動器提供微調鏡極快速 移動。若干技術述於美國直 、國專利申請案第608,543號,「雷射 頻寬㈣」,申請日2000年6月3〇日,以引用方式併入此處。 第16A及16關係由該用途躲,顯示本技術的主要元 體。壓電堆疊用於極快速鏡調整,先前技藝步進器馬達操 作桿臂獲得的調整大為較緩慢。壓電堆疊調整桿臂支點位 置。 π有PZT-步進為馬達組合驅動微調鏡之新穎 壓電驅動器之細節設計 第16圖為方塊圖,顯示雷射系統特色,該系統用於控 制輸出雷射束波長及脈衝能相當重要。顯示線窄化模組 15K,其含有二稜鏡雷射束擴張器、微調鏡μ及光栅。波 長计104監視輸出束波長,提供回授信號給LNp處理器 106,LNP處理器1〇6藉操動步進器馬達及ρζτ堆疊控制微 调鏡14的位置,容後詳述。操作波長可藉雷射控制器1〇2 遥擇。脈衝能也於波長計1 〇4測量,波長計丨〇4提供控制器 102用來控制於回授配置之脈衝能的信號,說明如前。第 16Α圖的方塊圖顯示ΡΖΤ堆疊8〇、步進器馬達82、鏡丨4及鏡 座86〇 苐16B 1圖為略圖顯示本發明之較佳具體實施例之結 構細節。藉步進器馬達通過26.5 : 1桿臂84產生鏡14位置的 大變化。此種情況下,於壓電驅動裝置8〇末端的鑽石襯墊 81設置用於接觸桿臂84支點的球形工具。桿臂84頂部與鏡 44 r裝…: (請先閲讀背面之注意事項再填寫本頁) 訂— :線— 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) ( 42~ " ~~541777 A7 座86間的接點設置有圓柱形雙尖釘於桿臂、以及四個球形 滾珠軸承(只顯示二者)架設於鏡座上,如Μ所示。壓電驅 動裝置80安裝於附有壓電座8〇八的1^1>架上,以及步進器 馬達女I於附有步進器馬達座82Α之機架上。鏡14使用三 丨 個鋁球(第16Β1圖只顯示一個)安裝於附有三點座的鏡座 86。二個彈黃施加壓縮力背向球體固定鏡。541777 A7 B7 V. Description of the Invention (39) In a more specific embodiment, a diffractive lens array is used as the diffuser 88. With this type of diffuser, a pattern is produced in the diffractive lens array that completely scatters the light but is only within an angle of about 5 degrees. Results ^ 90% of the light falling on the etalon was shot at a useful angle, and a much larger proportion of the light hitting the etalon was finally detected by the photodiode array. As a result, the amount of light incident on the etalon is greatly reduced, thereby greatly extending the life of the optical component. Applicants estimate that the incident light can be reduced to less than 5% or 10% of the previous technology, and there is equivalent light to the photodiode array. Better Collimation Using a Diffuser Diffuser Figure 14H shows a preferred embodiment of a structure that further reduces the light intensity through the etalon. This specific embodiment is similar to the specific embodiments discussed above. The sample beam (about 15 mm x 3 mm) from the mirror 182 passes upward through the condensing lens 400 and is then re-collimated by the lens 402. The beam is now collimated, the dimensions are reduced to about 5 mm x 1 mm, through the etalon housing window 404, and then through the diffractive diffusing element 406, which in this case (for ArF laser) is Alabama Diffraction Diffusers from Mems Optics, Inc. The component part number is D023-193, which converts substantially all of the 193 nm light in any incident collimated beam of any cross-sectional configuration into 2 degrees in the first direction and 4 degrees in the vertical first and second directions. Beam. The lens 410 then "focuses" the unfolded light beam onto the rectangular pattern covering the photodiode array 180, as shown in FIG. The active area of the photodiode array is approximately 0.5 mm and approximately 25.6 mm long. The dot pattern formed by the lens 410 is approximately 15 mm x 30 mm. The diffractive diffusing element thoroughly mixes the spatial components of the light beam, but substantially maintains all the light beams within the limits of 2 degrees and 4 degrees. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). 42; ·- ----- U——r: (Please read the precautions on the back before filling this page), one t —: line — 541777 A7 B7 V. Description of the invention (40. Let the light passing through the etalon substantially reduce and can be used. Effective use. The reader understands that by further reducing the energy of the etalon beam, the dot pattern of the short dimension of the photodiode array can be realized. However, further reduction to less than 15 mm will make optical alignment and communication more difficult. Therefore, the designer should consider the size of the dot pattern to be compromised. Another design is used in the KrF.radiation system operating at about 248_327 nm, providing a similar design to adjust the wavelength. In this specific embodiment, the focal length of the lens 400 is about 50mm (lens is part number OILQP001 of MeUes GHOT). The collimator lens 40 has a focal length of _2mm (Eνι Laser part number PLCC_1〇 (M〇3_uv) The diffractive diffusing element is Optical Co., Ltd. part number D023-248. In this specific embodiment and in the specific embodiment of ArF, the distance between the two lenses is appropriately positioned by the spacer 416. The applicant estimates that the laser operating at 2000 Hz passes the laser of the etalon The beam energy is about 10 watts, which is not enough to cause significant thermal problems with the etalon. In other preferred embodiments, the laser beam will come to the focal point between the lens 400 and 400. A suitable lens in this example must be used The well-known choice of optical technology. The feedback control of pulse energy and wavelength is based on the previous measurement of the pulse energy of each pulse, and controls the pulse energy of subsequent pulses to maintain a predetermined pulse energy and also maintain a predetermined total integrated dose of a specific number of pulses. In U.S. Patent No. 6,005,879 "Pulsed Energy Control of Excimer Lasers", incorporated herein by reference. Laser wavelengths can be used in feedback configurations using wavelength measurements and techniques known in prior art such as US patents Controlled by Known Technology No. 5,978,394, "The standard of the paper is turned over the standard _ standard (格 机 格 (2 songs 297)) ------—— (Please read the notes on the back first 嗔(Fill in this page), Yiding-line-five, invention description (41 knife laser wavelength system ", also incorporated here by way of bow 丨 W. The applicant recently developed the wavelength fine-tuning technology, which uses the I electric driver to provide The fine-tuning mirror moves extremely fast. Several technologies are described in US Patent Application No. 608,543, "Thunder Radio Frequency Band", filed on June 30, 2000, and incorporated herein by reference. Sections 16A and 16 The relationship is hidden by this purpose, showing the main elements of the technology. Piezoelectric stacks are used for extremely fast mirror adjustments. The adjustments obtained by the lever arm of the stepper motor of the prior art are much slower. The piezo stack adjusts the arm fulcrum position. π is a novel design of a novel piezoelectric actuator driven by a combination of PZT-stepping motor. Figure 16 is a block diagram showing the characteristics of a laser system. This system is very important for controlling the output laser beam wavelength and pulse energy. The display line narrowing module 15K includes a two-laser laser beam expander, a fine-tuning mirror μ, and a grating. The wavelength meter 104 monitors the output beam wavelength and provides a feedback signal to the LNp processor 106. The LNP processor 106 controls the position of the fine-tuning mirror 14 by operating the stepper motor and ρζτ stack, which will be described in detail later. The operating wavelength can be selected remotely by the laser controller 102. The pulse energy is also measured at the wavelength meter 104, which provides a signal for the controller 102 to control the pulse energy in the feedback configuration, as described above. Fig. 16A is a block diagram showing a PTZ stack 80, a stepper motor 82, a mirror 4 and a mirror holder 86B. 16B 1 is a schematic view showing the structural details of a preferred embodiment of the present invention. The stepper motor is used to generate a large change in the position of the mirror 14 through the 26.5: 1 lever arm 84. In this case, the diamond pad 81 at the end of the piezoelectric driving device 80 is provided with a spherical tool for contacting the fulcrum of the lever arm 84. The top of the lever arm 84 and the mirror 44 r are installed ...: (Please read the precautions on the back before filling in this page) Order —: Line — This paper size applies to China National Standard (CNS) A4 (210X297 mm) (42 ~ & quot ~~ 541777 The contact between the 86 of the A7 seat 86 is provided with a cylindrical double-pointed nail on the lever arm, and four spherical ball bearings (only shown both) are mounted on the lens holder, as shown by M. Piezo Drive 80 Mounted on 1 ^ 1 > frame with piezo mount 808, and stepper motor woman I on the frame with stepper motor mount 82A. Mirror 14 uses three aluminum balls (16B1 The figure shows only one) is mounted on a lens mount 86 with a three-point mount. Two elastic bullets apply a compressive force to fix the mirror back to the sphere.

第16Β2圖為略與第16Β1圖不同的較佳具體實施例。本 具體貫施例包括一伸縮節87來隔離壓電驅動裝置於LNp内 部環境。如此隔離防止紫外線對壓電元件造成的損傷,且 防止可能由壓電材料排出氣體造成的污染。也參考第丨9D 圖以及後文附隨的内文有關提供大為改良之lnp密封之另 一種LNP設計。 早棱鏡板 本發明之較佳具體實施例包括一片單稜鏡板,板上設 置二個光束展開用之三稜鏡。各個三稜鏡於製造期間係準 確定位於板7上,於三個可移動之定位銷間插入稜鏡,由板 底部插過精密鏜孔的定位孔。然後各稜鏡(使用3M 2216兩 份式環氧樹脂)膠黏至板的三個小點(直徑〇. 1吋),黏膠硬化 後移開插銷。此種技術可確保稜鏡相對於彼此準確定位且 簡化LNP的製造。於膠黏步驟期間,各個稜鏡使用一石旁試 驗釣魚線夾鐵固定偏離板〇_〇〇4吋距離,讓結果所得的膠黏 點產生三個極短腳,腳有極為些微的彈性,使用中可將溫 度變化造成稜鏡的壓力減至最低。稜鏡板位置以人工調整 於垂直通過腔室的雷射束方向,如第16圖之7A所示。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -45 _ (請先閲讀背面之注意事項再填寫本頁)FIG. 16B2 is a preferred embodiment slightly different from FIG. 16B1. This embodiment includes a telescopic joint 87 to isolate the piezoelectric driving device from the internal environment of the LNp. Such isolation prevents damage to the piezoelectric element caused by ultraviolet rays, and prevents pollution that may be caused by the exhaust gas of the piezoelectric material. Refer also to Figure 9D and the accompanying text for another LNP design that provides a much improved lnp seal. Early prism plate A preferred embodiment of the present invention includes a single cymbal plate on which three beams for three beams are provided. Each of the three cymbals is positioned on the plate 7 during manufacturing, and the cymbals are inserted between the three movable positioning pins, and the positioning holes of the precision boring are inserted through the bottom of the plate. Then each piece (using 3M 2216 two-part epoxy resin) was glued to the three small points (0.1 inches in diameter) of the board, the glue was hardened and the latch was removed. This technique ensures accurate positioning of plutonium relative to each other and simplifies the manufacturing of LNP. During the gluing step, each tadpole used a side-by-side test fishing line to clamp the iron to fix the distance from the board by 0.004 inches, so that the resulting glue points produced three extremely short feet with extremely slightly elastic feet. It can minimize the pressure caused by temperature changes. The position of the diaphragm is manually adjusted to the direction of the laser beam passing vertically through the chamber, as shown in Fig. 16A. This paper size applies to China National Standard (CNS) A4 (210X297mm) -45 _ (Please read the precautions on the back before filling this page)

541777 A7 五、發明説明(43 ) ^ - 試驗結果 —第16C圖顯示由嵌合第16B2圖具體實施例之雷射所得 實際試驗資料。線圖係由平均观衝窗目標波長的偏差 圖。偏差由約〇.〇5微微米減小至約〇〇〇5微微米。 本具體實施例比較前述步進器馬達驅動系、统有重大系 統加速,但速度又不夠快來做脈衝對脈衝調整。早期的鏡 定位方法需要約7毫秒來移動鏡14,造成於2_赫茲之脈衝 對脈衝波長調整為不可能。早期技術中,桿臂係以才區轴為 軸樞轉’產生鏡的移動比步進器位置的移動減少^ u。 先别技藝步進器的總行進距離為1/2吋(127毫米)及⑼㈧ 階,故每階距離約2微米。以1-26 5縮小,一階移動鏡約乃 奈米,典型改變雷射波長約〇1微微米。於第12A圖所示快 速作用技術,壓電堆疊8〇加在桿臂的樞軸位置。較佳壓電 堆=為德s沃得伯恩、物理儀器公司供、給的型號ρ_84〇· ^〇。 此C電堆$產生約3 .〇微米之直線調整,驅動電壓變化 伏特。此範圍係等於步進器馬達之土階。 壓電堆疊對應於控制信號於少於丨微秒以内,系統易比 4000赫兹頻率回應於更新信號。較佳具體實施例中,各脈 衝控制於4000赫茲脈衝率並非基於前一脈衝,反而係基於 前一脈衝以前的脈衝來有足夠時間做波長計算。但本具體 貫施例提供比先前技藝設計改良7因數,有7毫秒延遲。因 此可提供遂更快速的回授控制。較佳回授控制演繹法則述 於第16D®。本演繹法射,對各脈制量波長,對最末4 脈衝以及最末2脈衝算出平均波長。若任一平均值偏離目標 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 46 (請先閲讀背面之注意事項再填寫本頁) 訂| 線- 541777 五、發明説明(44 皮長夕於0.02被微米則無需做調整。若偏離目標大於〇·⑽ U U米^㈣壓電堆® 8G對鏡總成做調整來提供波長校 一平均值中使用何者係由末次調整後經過多少時間決 定。當—壓電堆疊趨近其範圍之邮戰(或為了提供更可利 用的feu ’使用45至55%替代扣至7。%範圍)時,藉步進步 2器馬達而將壓電堆疊維持於其控制範圍。因步進器馬達 而要約7 ί:秒來完成―步,演繹法則於步進器馬達的一步時 可做數次壓電調整。 前置微調及主動微調 前述具體實施例可用於唧伯(chirp)修正以外的目的。 某些情況下,積體電路微影術操作員希望於預定基準變更 波長。換言之’目標波長λτ可能並非固定波長,反而可視 料 需要改變,遵照預定樣式改變、或使用早期過往波長資$ 或其匕芩數,經由連續或定期更新學習演繹法則結果改變 調適性前饋 另 :發 預 本發明之較佳具體實施例包括前饋演繹法則。此等演 、、睪法則可由雷射操作貞基於已知叢發操作樣式編碼。 外’此種决、繹法則可為調適性,故雷射控制裝置谓測叢 ;弋士上圖所示,然後修正控制參數,提供鏡14調整預 /月皮長位私可避免或將位移減至最低調適性前饋技術涉及 於軟體由來自—或多個先前叢發脈衝的資料以指定重複率 建立唧伯模式,以及使用ΡΖΤ堆疊來轉化唧伯效應。 疊 藉 為了適當設計唧伯轉化,需要兩件資訊:(1)ρζτ· 的脈衝回應’以及(2)哪伯形狀。對各重複率"即伯波形 本紙張尺度適用巾國國家標準(CNS) Α4規格⑵〇χ297公愛) 541777 五、發明説明(45) pzt堆疊的脈衝回應反 至奶堆疊(帶有適系列脈衝’其當應用 )時將抵鎖利。此項運算可經由 声m“透過研究行為而於離線進行。資料序列可健 二來:T目及重複率作為索引。此表於操作期間 末拾取,適波形資料用於調適性前饋轉化。也可能, 貝上車乂好母次重複速率變更時’於操作㈣使用少數叢 發f料,幾乎即時獲得物狀模式1伯形狀模式以及 可此的PZT脈衝回應模式基於模式與資料間累進的計算錯541777 A7 V. Description of the invention (43) ^-Test result-Figure 16C shows the actual test data obtained by the laser of the specific embodiment of Figure 16B2. The line graph is the deviation of the target wavelength from the average viewing window. The deviation was reduced from about 0.05 micrometers to about 0.05 micrometers. This specific embodiment compares the aforementioned stepper motor drive system with a major system acceleration, but the speed is not fast enough to do pulse-to-pulse adjustment. Early mirror positioning methods required about 7 milliseconds to move the mirror 14, resulting in a pulse of 2 Hz that made it impossible to adjust the pulse wavelength. In the early technology, the lever arm was pivoted with the axis of the zone as the axis, and the movement of the mirror was less than that of the stepper. The total travel distance of the stepper is 1/2 inch (127 mm) and the first step, so the distance of each step is about 2 microns. With a reduction of 1-26, the first-order moving mirror is about nanometers, and the laser wavelength is typically changed by about 0.1 micron. In the fast-acting technology shown in Figure 12A, a piezoelectric stack 80 is added to the pivot position of the lever arm. Preferred Piezoelectric Reactor = Model ρ_84〇 · ^ for Des Vodborn, Physical Instrument Company. This C stack produces a linear adjustment of about 3.0 microns, with a driving voltage change of volts. This range is equal to the earth step of the stepper motor. The piezoelectric stack corresponds to the control signal in less than 丨 microseconds, and the system responds to the update signal at a frequency of 4000 Hz. In a preferred embodiment, the pulse rate is controlled at 4000 Hz. The pulse rate is not based on the previous pulse, but is based on the pulse before the previous pulse to allow sufficient time for wavelength calculation. However, this specific embodiment provides a 7 factor improvement over the previous art design with a 7 millisecond delay. This provides faster feedback control. The better feedback control deduction rule is described in Section 16D®. In this deduction, the average wavelength is calculated for each pulse control wavelength, the last 4 pulses, and the last 2 pulses. If any average value deviates from the target, the Chinese paper standard (CNS) A4 specification (210X297) is applicable. (Please read the precautions on the back before filling this page) Order | Line-541777 V. Description of the invention (44 skins If the long-term is 0.02 micron, no adjustment is needed. If the deviation is greater than 0 · ⑽ UU meters ^ ㈣ Piezo Stack® 8G adjusts the mirror assembly to provide a wavelength calibration average. Which one is used and how much has passed since the last adjustment Time to decide. When the piezoelectric stack approaches its range of postal warfare (or in order to provide a more usable feu 'use 45 to 55% instead of the buckle to the 7.% range), advance the piezoelectric motor by two steps The stacking is maintained within its control range. It takes about 7 ί: seconds to complete the step because of the stepper motor. The deduction rule can make several piezoelectric adjustments during one step of the stepper motor. Pre-fine adjustment and active fine-tuning The example can be used for purposes other than chirp correction. In some cases, integrated circuit lithography operators want to change the wavelength at a predetermined reference. In other words, the 'target wavelength λτ may not be a fixed wavelength, but may be based on material requirements. Change, follow a predetermined pattern change, or use early past wavelengths or its number of daggers, and continuously or periodically update the learning deduction rule to change the adaptability feedforward. Another: Send a preview of the preferred embodiment of the present invention including feedforward deduction. Laws. These algorithms can be coded by the laser operator based on a known burst operation pattern. Outside, this rule can be adapted, so the laser control device is called the test cluster; Display, and then modify the control parameters to provide the mirror 14 to adjust the pre / month skin length to avoid or minimize displacement. The adaptive feedforward technology involves software that uses data from one or more previous burst pulses to specify the repetition rate. Establishing the Zeber mode and using the PZTT stack to transform the Zeber effect. To properly design the Zeber transformation, two pieces of information are needed: (1) the impulse response of ρζτ · and (2) the Heber shape. For each repetition rate " That is, the paper size of this paper is applicable to the national standard (CNS) of A4 specification (〇〇297297) 541777 V. Description of the invention (45) The impulse response of the pzt stack is reversed to the milk stack (with Suitable series of pulses' which, when applied) will lock against Li. This operation can be performed offline through the sound m through research behavior. The data sequence can be used for two purposes: T and the repetition rate as indexes. This table is picked at the end of the operation period, and the waveform data is used for adaptive feedforward transformation. Possibly, when the mother-to-child repetition rate is changed, when using a small number of bursts, the material-like mode and the PZT impulse response mode can be obtained almost instantaneously based on the progressive calculation between the mode and the data. wrong

誤可每N個叢發更新(例如調適)。較佳演繹法則述於第16E 圖。 叢發脈衝起點的唧伯可使用第16E圖所示演繹法則控 制。字母k表示-叢發的脈衝數目。叢發分成兩區,一個k 區一個1區。k區係用於少於第]^個脈衝編號(界定一段時間 夠長而可涵蓋口即伯)。分開成比例的常數Pk、積分常數W 及線中心誤差的積分和SLCEk用於各脈衝編號。次一叢發 k區之對應脈衝編號的Ρζτ電壓係由此等常數及和決定。第 k個脈衝後,傳統比例積分常式控制ΡΖΤ電壓。叢發的次一 脈衝電壓為目前電壓加P1CE+P2LCE。說明本演繹法則 主要步驟的流程圖示於第丨6E圖。Errors can be updated every N bursts (eg, adaptation). A better deduction rule is described in Figure 16E. The beginning of the burst pulse can be controlled using the deduction rule shown in Figure 16E. The letter k indicates the number of bursts. The burst is divided into two areas, one for k and one for area. The k-zone is used for the pulse number less than [^^] (defined long enough to cover the mouth). The proportional constant Pk, the integral constant W, and the integral and SLCEk of the line center error are used for each pulse number. The Pζτ voltage corresponding to the pulse number of the k-zone in the next burst is determined by this constant and sum. After the k-th pulse, the traditional proportional-integral routine controls the PTZ voltage. The next burst pulse voltage is the current voltage plus P1CE + P2LCE. A flow chart illustrating the main steps of this deduction rule is shown in Figure 6E.

高負载週期LNP 已知掃除線窄化封裝體;但先前技藝教示維持掃除流 直接流於光栅表面上,掃除流典型係經由位於光栅表面後 方位置的埠口提供。但申請人發現於極高重複率時,於光 栅表面發展出一層熱氣體(氮氣)造成波長失真。此項失真 48 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 541777 A7 B7 五、發明説明(46 (請先閲讀背面之注意事項再填寫本頁) 至V。卩分可藉前文討論之主動波長控制校正。另一種辦法 係掃除光柵表面,如第17圖所示。第17圖中,於長10吋直 拴3/8吋掃除官61頂部小孔毫米,1/4吋間隔)提供掃除 流。如下節所述,掃除氣體可為來自純氮氣供應源的氮氣。 又車乂仏具體貫施例中,LNp係以氦氣掃除,說明如後。其 它技術示於第17A、πβ及17C圖。 用於控制波長及頻寬之特定技術述於下列專利申請 案各案以引用方式併入此處:美國申請案第09/794,782 號,申睛曰2001年2月27曰,名稱「以壓電驅動器做雷射波 長才工制」,美國申請案第10/〇27,210號,申請日2001年12月 21曰,名稱「以壓電驅動器做雷射波長控制」;以及申請案 第1〇/〇36,925號,中請曰2〇〇1年12月21日,名稱「微影術 製程之雷射光I"普工程」。 知除糸統 :線丨 本I明之第一具體實施例包括超純氮氣掃除系統,其 提供大為改良的性能以及實質延長組成元件壽命。 第19圖為方塊圖顯示本發明之第一較佳具體實施例之 主要結構。於本系統之本具體實施例,藉氮氣掃除之5種準 分子雷射組成元件為LNP2P、安裝於雷射腔室仆之高電壓 組成元件4P、連結高電壓組成元件4p與上游脈衝功率組成 元件ιορ之高電壓纜線8P、輸出耦合器12p及波長計141>。 各組成兀件2P、4P、8P、12P及14P容納於密封容器或腔室, 各自只有兩個埠口,一個氮氣進氣口以及一個氮氣出氣 口。虱乳來源16P典型為積體電路製造廠的大型氮氣槽(典 本紙張尺度適财關緖準(CNS) M規格⑵狀撕公 541777 A7 --------— B7 一 五、發明説明(47) ' 型維持於液態氮溫度),但也可為相對小瓶氮氣。氮氣來源 氣體由說氣來源16P送出,進入氮氣掃除模組17P,通過氮 氣過濾器18P至分配面板20P,其含有流量控制閥用來控制 氮氣至被掃除組成元件的氮氣流。至於各個組成元件,掃 除流引導返回模組17P至流量監視器單元22p ’於該處由各 掃除單元返回的流經監控,當監控流量低於預定值時,作 動警報(圖中未顯示)。 第19A圖為線圖,顯示本較佳具體實施例之特定組成 元件,包括若干非特別有關本發明之掃除結構的額外氮氣 結構。 氮氣過濾器 本發明之重要結構係涵括氮氣過濾器丨8。過去積體電 路微影術用準分子雷射製造上認為氮氣掃除氣體之過濾器 並非必要’原因在於市售氮氣的氣體規格幾乎足夠良好, 氣體滿足的規格夠乾淨。但申請人發現偶爾來源氣體不合 規格’或導引至掃除系統的氮氣管線含有污染。又管線也 可能在維修或操作程序期間受到污染。申請人判定加上過 濾器對污染造成損傷機率進一步減低獲得極佳保證。 較佳氮氣過濾器為得自加州聖地牙哥亞羅奈士 (Aer〇nex)公司之型號5〇〇κ惰性氣體純化器。此種過濾器可 去除ΗΑ、ο]、c〇、C02、出以及非甲烷烴氣至低於ppb 程度。此種過濾器可去除99·9999999%全部0.003微米或以 上的微粒。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 50 (請先閲讀背面之注意事項再填寫本頁) •裝— 訂---- :線- 541777 A7 B7 五、發明説明(48 流量監視器 單tl 22之流量監視器設置用於個別5個掃除組成元 件,此等組成元件為市售單元,帶有流量過低時發出警報 的結構。 管路 較好全部管路係由不鏽鋼(316SST)組成帶有電磨光内 部。可使用PFA 400或超高純度鐵弗龍組成的某些類型塑 膠管。 循環 部分或全部掃除氣體可如第19B圖所示循環使用。此 種^況下,增加鼓風機或水冷式熱交換器至掃除模組。例 如來自光學組件的掃除流可循環,來自電氣組件的掃除流 可排氣,或部分組合流可被排氣。 LNP之氦氣掃除 較佳具體實施例中,LNP係使用氦氣掃除,射束路徑 其餘部件係使用氮氣掃除。氦氣具有比氮氣遠更低的折射 率,故使用氦氣讓LNP的熱效應減至最低。但氦氣比氮氣 貴約1000倍。 改良密封 申凊人發現提供極為「乾淨」射束路徑的重大優點。 於高能紫外輻射組合多種形式的污染包括氧氣污染存在 下,雷射光學裝置快速劣化。包圍射束路徑之較佳技術述 於美國專利申请案第-一_號,申請曰2001年11月14曰, 名稱「具有改良射束路徑之氣體放電雷射」,以引用方式併 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) J------—— (請先閲讀背面之注意事項再填寫本頁) 、=tt 線- 541777 A7 —— _ —_B7 五、發明説明(49 ) 入此處。第19C、D、E及F圖係摘自該申請案。第19C圖為 略圖顯示類似前文說明主振盪器之氣體放電系統各組成元 件間的伸縮節封。第19D圖顯示修改例,包括LNp步進馬 達之伸縮節配置俾密封馬達與LNp包圍體間的界面。第19£ 圖顯不LNP之熱解除耦合孔口,的加熱減至最低, 也包圍LNP入口,故可以相對廉價的氦氣掃除。氣氣通過 月工至囪單元如第19C圖95所示由LNP送出。第19F圖1、2、 3、4及5顯示容易密封的伸縮節封,用以提供雷射模組間的 密封,但允許模組迅速容易解除耦合俾允許迅速更換模 組。第19G圖顯示特殊掃除配置來掃除波長計高強度部 分。此種特殊掃除述於下節。 糸統優點 此處所述系統表示KrF雷射特別ArF雷射及&雷射長 J準刀子田射性旎的重大改良。基本上可免除污染問題, 結果導致組成元件壽命實質延長以及射束品質實質提高。 此外,因除了出氣口之外,大致上免除汽漏,故可將流量 控制於預定值,具有減低氮氣需求達約5〇%的效果。 帶有功率計之密封開閉器單元 第一較佳具體實施例包括密封開閉器單元$ 〇 〇,有内建 功率計如第2〇、2〇A及細圖所示。利用此項重大改良,開 閉器有兩項功能,第一作為遮斷雷射束的開閉器;以及第 二料全射束功率計用以於需要測量時監視射束功率。 第20圖為頂視圖顯示開閉器單元的主要組成元件。組 成元件包括_器502、射束傾卸器5〇4及功率計5〇6。帶有 本紙張尺度適财關緖準(CNS)A4^ (210)^57 52 (請先閲讀背面之注意事項再填寫本頁)High-load-cycle LNPs are known to narrow the package; however, previous techniques taught that the sweep flow is maintained directly on the grating surface. The sweep flow is typically provided through a port located behind the grating surface. However, the applicant found that at a very high repetition rate, a layer of hot gas (nitrogen) developed on the surface of the grating caused wavelength distortion. This distortion of 48 paper standards is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public love) 541777 A7 B7 V. Invention description (46 (Please read the precautions on the back before filling this page) to V. You can borrow The active wavelength control correction discussed earlier. Another method is to sweep the surface of the grating, as shown in Figure 17. In Figure 17, a 10-inch long 3 / 8-inch sweeper is directly bolted to the top of the 61 mm hole, 1 / 4-inch Interval) to provide a sweep stream. As described in the next section, the sweep gas may be nitrogen from a pure nitrogen supply. In the specific embodiment of the car, LNp is swept with helium, which will be described later. Other techniques are shown in Figures 17A, πβ and 17C. Specific techniques for controlling wavelength and bandwidth are described in the following patent applications, each of which is incorporated herein by reference: U.S. Application No. 09 / 794,782, dated February 27, 2001, entitled "Piezoelectric The driver does laser wavelength manufacturing system ", U.S. Application No. 10 / 〇27,210, the application date is December 21, 2001, and the name is" Plasma Driver for Laser Wavelength Control "; and Application No. 10 / 〇 No. 36,925, please refer to December 21, 2001, the name "Laser Light I " General Project of Lithography Process". Knowing the system: The first embodiment of the present invention includes an ultra-pure nitrogen sweeping system, which provides greatly improved performance and substantially extends the life of constituent components. Fig. 19 is a block diagram showing the main structure of the first preferred embodiment of the present invention. In this specific embodiment of the system, the five types of excimer laser constituent elements purged by nitrogen are LNP2P, a high-voltage constituent element 4P installed in the laser chamber, a high-voltage constituent element 4p, and an upstream pulse power constituent element. high-voltage cable 8P, output coupler 12p, and wavelength meter 141 >. Each component 2P, 4P, 8P, 12P, and 14P is housed in a sealed container or chamber, each of which has only two ports, a nitrogen inlet and a nitrogen outlet. The source of lice milk 16P is typically a large nitrogen tank of the integrated circuit manufacturing plant (a typical paper size is suitable for financial and economic standards (CNS) M specifications cricket tearing 541777 A7 ------------ B7. Note (Type 47) is maintained at liquid nitrogen temperature), but can also be a relatively small vial of nitrogen. Nitrogen source The gas is sent from the gas source 16P, enters the nitrogen sweep module 17P, and passes through the nitrogen filter 18P to the distribution panel 20P. It contains a flow control valve to control the flow of nitrogen to the component being purged. As for each component, the sweep flow guide return module 17P to the flow monitor unit 22p ′ is used to monitor the flow passage returned by each sweep unit, and when the monitored flow is lower than a predetermined value, an alarm is activated (not shown in the figure). Figure 19A is a line diagram showing specific constituent elements of the preferred embodiment, including a number of additional nitrogen structures that are not particularly relevant to the sweep structure of the present invention. Nitrogen filter An important structure of the present invention includes a nitrogen filter. In the past, in the fabrication of integrated circuit lithography for excimer laser manufacturing, it was considered that a nitrogen purging filter was not necessary 'because the gas specifications of commercially available nitrogen were almost good enough, and the specifications that the gas met were clean enough. However, the applicant found that occasionally the source gas was out of specification 'or that the nitrogen line leading to the sweep system contained contamination. The pipeline may also be contaminated during maintenance or operating procedures. The applicant judged that the addition of the filter to further reduce the probability of damage caused by pollution obtained an excellent guarantee. A preferred nitrogen filter is a Model 500K inert gas purifier available from Aeronex, San Diego, California. This filter can remove ΗΑ, ο], co, CO2, effluent and non-methane hydrocarbon gas to a level below ppb. This filter can remove 99.9999999% of all particles of 0.003 microns or more. This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) 50 (Please read the precautions on the back before filling out this page) • Binding-Order ----: Line-541777 A7 B7 V. Description of the invention ( 48 flow monitor single tl 22 The flow monitor is set for each of the 5 sweeping components. These components are commercially available units with a structure that issues an alarm when the flow is too low. Stainless steel (316SST) composition with electro-polished interior. Some types of plastic tubes composed of PFA 400 or ultra-high-purity Teflon can be used. Part or all of the sweep gas can be recycled as shown in Figure 19B. This type ^ In this case, add a blower or water-cooled heat exchanger to the sweeping module. For example, the sweeping flow from the optical component can be circulated, the sweeping flow from the electrical component can be exhausted, or part of the combined flow can be exhausted. LNP helium sweep In a preferred embodiment, the LNP is swept with helium, and the remaining components of the beam path are swept with nitrogen. Helium has a lower refractive index than nitrogen, so the use of helium minimizes the thermal effects of LNP. But helium is about 1,000 times more expensive than nitrogen. Improved seals have found significant advantages in providing an extremely "clean" beam path. Laser optics degrade rapidly in the presence of high-energy ultraviolet radiation combined with multiple forms of pollution, including oxygen pollution. The preferred technique for enclosing the beam path is described in US Patent Application No.-I_. The application date is November 14, 2001. The name is "Gas Discharge Laser with Improved Beam Path." Applicable to China National Standard (CNS) A4 specification (210X297 mm) J ------—— (Please read the precautions on the back before filling this page), = tt line-541777 A7 —— _ —_B7 V. Description of the invention (49) Enter here. Figures 19C, D, E and F are taken from the application. Figure 19C is a schematic diagram showing similar expansion and contraction between the various components of the gas discharge system of the main oscillator described above. Figure 19D shows a modified example, including the telescopic joint configuration of the LNp stepper motor and the interface between the sealed motor and the LNp enclosure. Figure 19 £ shows the thermal decoupling orifice of the LNP, which minimizes the heating and also surrounds the LNP inlet , So Sweep with relatively cheap helium gas. The gas is sent by the LNP as shown in Fig. 19C and Fig. 95 through the moon-to-chamber unit. Figs. 1, 2, 3, 4 and 5 of 19F show the easy-to-seal telescopic joint seal to provide The laser module is sealed, but allows the module to be quickly and easily decoupled. Allows the module to be replaced quickly. Figure 19G shows a special sweep configuration to sweep the high-intensity part of the wavelength meter. This special sweep is described in the next section. System advantages The system described here represents a significant improvement in the KrF laser, the special ArF laser, and the & laser length J quasi-knife field radiation performance. It can basically eliminate the problem of contamination, resulting in a substantial extension of the component component life and a substantially improved beam quality. . In addition, since the air leakage is substantially eliminated except for the air outlet, the flow rate can be controlled to a predetermined value, which has the effect of reducing the nitrogen demand by about 50%. Sealed shutter unit with power meter The first preferred embodiment includes a sealed shutter unit of $ 00. There is a built-in power meter as shown in Figures 20, 20A and detailed drawings. With this major improvement, the shutter has two functions, the first being a shutter that blocks the laser beam; and the second full beam power meter to monitor the beam power when measurement is needed. Figure 20 is a top view showing the main components of the shutter unit. The components include the device 502, the beam dumper 504 and the power meter 506. With this paper size Standard Finance Standard (CNS) A4 ^ (210) ^ 57 52 (Please read the notes on the back before filling this page)

541777 A7541777 A7

Order

541777 A7541777 A7

五、發明説明(51 ) B7 之95%能量作為輸出射束。約4%反射束係由鏡171反射至 旎置偵測器172,於該處測量脈衝能。(通過鏡171的反射束 請 先 閲 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 其它部分顯示於61A而進入波長計的其它監視器)。於4,〇〇〇 赫茲,5%輸出能表示大量紫外光,故需特別小心確保於射 束此部分路徑氣體極為乾淨純質。為達此項目的,波長計 經修改而密封鏡170上游端、鏡171上游端、與偵測器172 窗前端間之區域與波長計其餘部分。流進及流出本區域之 特殊掃除流顯示於62A。波長計其餘部分係藉64八所示第二 掃除流掃除。 掃除流62A藉鏡170、171及偵測氣窗172之封而被侷限 於波長汁。掃除流由此區沿雷射輸出射束路徑送出通過伸 縮節區6A返回輸出耦合器模組68A而掃除該模組。然後流 流經伸縮節單元70A,流進窗方塊72A,由窗方塊的出口以 及伸縮節單元7GA的出口流出,然後經管路返回氮氣择除 模組17,如第19圖74八所示。窗17〇之下游端使用來自開閉 器模組5K的掃除流掃除。如第19圖所示,掃除流係來自模 組17;或某些情況下,窗76A被移開,開閉器模組輸出開 放式連結被掃除的射束管線,該種案例中於78a的出口掃 除管線可被導引至客戶掃除返回系統或排放至大氣。 恆定光學參數 隨著微影術雷射的老化,光束品質特性改變。通常。 質傾向於緩慢劣化。即使於使用後射束品質不再符合2 格,通常需要更換主要組成元件(例如f射腔室、咖及/ 或波長計)。如歧雷射使用壽命期間,雷射束品質實質上 54 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 五、發明説明(52) 係於規格範圍内改 的微料执供 對於利用叹叶用於光學品質雷射束 :之積體電路微影術廠商可能成問題。「優於」 一书田、ί品質的結果將導致積體電路品質非期望的變化。 H決之道係提供—種雷m該雷料統於雷射使 用哥印期間可讓雷射束品質實質維持穩定。此項目的可使 用與本案同時提出申請的美國專利申請案第—號所述 技術達成,此處使用壓電驅動器微調鏡來提供波長安定值 及頻寬值其係對應預期之名目值而非雷射最佳值。脈衝能 可使用前述回授控制裝置控制,俾維持能量穩定值於預期 的正常值而非最佳可能值。氟濃度以及雷射氣體壓力也可 經,節:產生預期的雷射束品質數值,而非脈衝能及波長 的最穩定數值以及最窄可能的頻寬數值。 延長脈衝持續時間 夕種積體電路微影術設備的光學組成元件特別透鏡組 成元件極為昂貴。此等組成元件已知於使用短波長紫外光 日守劣化。已知對指定脈衝能而言,劣化情況係隨著脈衝長 度的縮短而提高。因此脈衝長度較長等於透鏡壽命較長。 因此’較長的脈衝長度為此種準分子雷射的重大改進。於 193奈米之ArF雷射比248奈米KrF雷射的列化速率遠更惡 化。 設計用於最有效雷射性能,脈衝能於約5毫焦耳至約j 〇 毫焦耳範圍之KrF及ArF窄頻雷射之典型脈衝時間約為J 5 奈秒至25奈秒。第23A圖顯示典型準分子雷射脈衝特色。 此專特色為電壓或Cp、不含雷射及帶有雷射之側向螢光以 55 - 訂 举 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 五、發明説明(53 / =?之雷射脈衝。申請人以若干技術進行實驗,用 、田射脈衝持續時間’例如增 容,但此等技術 導致整體性能遠更低劣。 u申4人使用中請人稱作「電流過射最大化器」之脈衝 J y配置而實質成功地延長脈衝持續時間。 電流過射最大化器 脈衝功率電流過射最大化器(「c〇m」)電路顯示於第 圖。第一線索為目前過射策略可行,如第23A圖顯然易 :本圖所不雷射強度有二確切隆起,第一隆起係由初正 電流週期引起,第二個較小隆起係由於第一負電流週期通 過放電所引起。強度差異原因在於恰在負電流週期前儲存 於CP的能量比較恰在第一正電流週期前儲存於Cp的能量 大減。若可提高負電流週期時的雷射量,則結果所得雷射 脈衝將約為兩倍寬。供參考用,顯示於基準線報告的⑯ 雷射結果示於第23BBI。此時未如同KrF,於ArF之負電流 週期絲毫也未出現雷射。 、^5. Description of the invention (51) 95% of the energy of B7 is used as the output beam. Approximately 4% of the reflected beam is reflected from the mirror 171 to the set detector 172, where the pulse energy is measured. (Please read the notes on the back side of the reflected beam through the mirror 171 before filling in the rest of this page shown at 61A and entering other monitors of the wavelength meter). At 4,000 Hz, 5% output can represent a large amount of ultraviolet light, so special care must be taken to ensure that the gas in this part of the beam path is extremely clean and pure. To achieve this, the wavelength meter was modified to seal the area between the upstream end of mirror 170, the upstream end of mirror 171, and the front end of the window of detector 172 and the rest of the wavelength meter. Special sweep streams flowing in and out of this area are shown at 62A. The rest of the wavelength meter is swept by the second sweeping stream shown in Figure 64. The sweep stream 62A is limited to the wavelength juice by the seals of the mirrors 170, 171 and the detection transom 172. The sweep stream is sent from this region along the laser output beam path and is returned to the output coupler module 68A through the stretched region 6A to sweep the module. Then it flows through the telescopic joint unit 70A, flows into the window block 72A, flows out from the outlet of the window block and the outlet of the telescopic joint unit 7GA, and then returns to the nitrogen selection and removal module 17 through the pipeline, as shown in Fig. 19 and Fig. 74. The downstream end of the window 170 is swept using a sweeping flow from the shutter module 5K. As shown in Figure 19, the sweep stream is from module 17; or in some cases, the window 76A is removed and the shutter module outputs an open connection to the beam line being cleaned. In this case, at the exit of 78a The sweep line can be directed to a customer sweep return system or vented to the atmosphere. Constant optical parameters As lithography lasers age, beam quality characteristics change. usually. Quality tends to deteriorate slowly. Even if the beam quality no longer meets 2 divisions after use, it is usually necessary to replace the main component components (such as the f-beam chamber, coffee and / or wavelength meter). For example, during the life of the ambiguity laser, the quality of the laser beam is substantially 54. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 541777. 5. Description of the invention (52) Micro-materials modified within the specification range. For the use of sigh leaves for optical quality laser beams: integrated circuit lithography manufacturers can be problematic. "Outperformed" by Yi Shutian, the quality results will lead to undesired changes in the quality of integrated circuits. The way of H-determination is to provide a kind of lightning. The laser material can keep the quality of the laser beam substantially stable during the use of the laser. This project can be achieved using the technology described in US Patent Application No.-which is filed at the same time as this case. Here, a piezoelectric actuator fine-tuning mirror is used to provide wavelength stability values and bandwidth values that correspond to expected nominal values rather than lightning Shoot the best value. Pulse energy can be controlled using the aforementioned feedback control device to maintain a stable energy value at the expected normal value instead of the best possible value. Fluorine concentration and laser gas pressure can also be passed, section: Generate the expected laser beam quality value, instead of the most stable value of pulse energy and wavelength, and the narrowest possible bandwidth value. Extending the pulse duration The optical components of the integrated circuit lithography equipment, especially the lens components, are extremely expensive. These constituent elements are known to deteriorate by using short-wavelength ultraviolet light. It is known that for a given pulse energy, the degradation increases as the pulse length decreases. Therefore, a longer pulse length is equivalent to a longer lens life. So 'longer pulse lengths are a significant improvement over this excimer laser. The ArF laser at 193 nm has a far worse serialization rate than the 248 nm KrF laser. Designed for the most effective laser performance, typical pulse times for KrF and ArF narrowband lasers with pulses in the range of about 5 millijoules to about j 〇 millijoules are about J 5 nanoseconds to 25 nanoseconds. Figure 23A shows the characteristics of a typical excimer laser pulse. This special feature is voltage or Cp, laser-free and lateral fluorescence with laser. 55-Order this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 541777 5. Description of the invention ( 53 / =? Of laser pulses. The applicant conducted experiments with several techniques, using field pulse durations such as capacity expansion, but these techniques caused the overall performance to be much lower and worse. The pulse J y configuration of the "Current Overshoot Maximizer" successfully extended the pulse duration. The current overshoot maximizer pulse power and current overshoot maximizer ("c〇m") circuit is shown in the figure. One clue is that the current overshooting strategy is feasible, as shown in Figure 23A. It is obviously easy: the laser intensity in this picture has two exact bulges. The first bulge is caused by the initial positive current cycle, and the second smaller bulge is due to the first negative. The current cycle is caused by the discharge. The difference in intensity is because the energy stored in the CP just before the negative current cycle is much less than the energy stored in Cp just before the first positive current cycle. If the laser amount at the negative current cycle can be increased , Then knot The resulting laser pulse will be about twice as wide. For reference, the results of the ⑯ laser displayed on the baseline are shown at 23BBI. At this time, it is not like KrF, and there is no laser at all in the negative current period of ArF. , ^

cp值及Lp值於波形各部分期間決定電泵送位準相♦ 重要。此種情況下,於負電流週期期間需要提高泵送位準田。 可以兩種方式達成’第-方式係降叫,故放電時施加較 大1負Vcp;第二’降低Cp,故對指定儲存能而言為較 高’而可克服較高臾峰電流之頭電感較快速問題。紅= 6.hH降至4·1ηΗ,升高負週期豕送位準高於^的』限 值’如第23C圖所示。圖中可知由負電流週期引起有玫中 射能。降低CP值’於負電流週期期間進-步提高雷射輸I 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 A7 -----— B7 — 五、發明説明(54 ) 位準,如第23D圖所示。 各圖所示負電流週期期間之雷射輸出量仍然遠低於 。強度位準。其中一項理由為由此等值及值變化導 致與放電阻抗之匹配改良。當LpACp減少時,於放電有高 阻抗期間,較大量cp儲存能被移轉至放電。測量隨時間改 艾之放電阻抗,結果顯示於第23£圖。放電阻抗耗時約加 奈秒由百萬歐姆值塌陷至i歐姆區。若藉以及“形成的放 電電路夠快速,則全部儲存於Cp的能量將耗散於高阻抗放 電,則於Cp無電壓過射。Cp及Lp的減少為負電流週期達成 雷射所需,負電流減少也增加粗Cp能分量,其係於第一正 電流週期期間由放電吸收。於正電流週期期間隨著吸收能 量的增高,於負電壓過射期間較少能量留在Cp,因而較少 能量可用於驅動負電流週期。 COM之示意圖顯示於第23f圖。本電路形態類似早期 用於2X程式之雙重脈衝器,但外尖峰電容器係以稱做 的電感器替代。Lcom與Cp間設置可飽和電感器的v*s乘積 大小可幾乎隨著放電引發的同時開關。使用此種配置,電 流將由尖峰電容器流至放電及COM電感器。各事件順序如 後* 1) Cp為藉脈衝功率模組充電之脈衝(第23G圖)。 2) COM可飽和電感器幾乎與突崩放電引發同時開關 (第23H圖)。 3) 電流開始累積,流出Cp至放電及Lcom(第231圖)。 4) Cp電壓通過零,通過放電的電流開始平息,但Lp 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 57 (請先閲讀背面之注意事項再填寫本頁) 丨裝丨 •訂— :線丨 541777 A7 B7 五、發明説明(55 電感及Lcom電感強迫電流連續流出Cp,迫使Vcp為負。因 Lcom電感係大於Lp,故其電流流動遠比放電電流流動的平 息更慢(第23J圖)。 5) Cp之負電壓(因此Lp之負電壓)逆轉電流之流經放 電,但流經Lcom之電流仍維持相同方向,原因在於流經cp value and Lp value determine the phase of electric pumping during each part of the waveform ♦ Important. In this case, the pumping level needs to be increased during the negative current cycle. Two ways can be used to achieve the "first way" is to lower the bid, so a larger 1 negative Vcp is applied when discharging; the second "reduces the Cp, so it is higher for the specified storage energy" and can overcome the head of the higher peak current. Faster inductance problem. Red = 6.hH drops to 4 · 1ηΗ, and the negative period 豕 raises the sending level above ^ 's limit value' as shown in Figure 23C. It can be seen from the figure that the radiation energy is caused by the negative current period. Decrease CP value to further increase laser transmission during the negative current cycle. I This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 541777 A7 -----— B7 — V. Description of the invention (54 ) Level, as shown in Figure 23D. The laser output during the negative current cycle shown in the figures is still much lower than. Intensity level. One of the reasons is that the matching of the equivalent value and the value change improves the discharge impedance. When LpACp decreases, a larger amount of cp storage can be transferred to discharge during periods when the discharge has a high impedance. The discharge impedance over time was measured and the results are shown in Figure 23 £. The discharge impedance takes about a nanosecond to collapse from the million ohm value to the i ohm region. If the “and formed discharge circuit is fast enough, all the energy stored in Cp will be dissipated in a high-impedance discharge, and there will be no voltage overshoot at Cp. The reduction of Cp and Lp is required for the negative current cycle to achieve laser, The decrease in current also increases the coarse Cp energy component, which is absorbed by the discharge during the first positive current cycle. As the absorbed energy increases during the positive current cycle, less energy remains in Cp during negative voltage overshoot, and therefore less The energy can be used to drive the negative current cycle. The schematic diagram of COM is shown in Figure 23f. This circuit is similar to the double pulser used in the 2X program in the early stage, but the external spike capacitor is replaced by a so-called inductor. The setting between Lcom and Cp can be set. The size of the v * s product of a saturated inductor can be switched at the same time as the discharge is triggered. With this configuration, the current will flow from the peak capacitor to the discharge and COM inductors. The sequence of events is as follows * 1) Cp is a pulsed power mode The charging pulse of the group (Figure 23G). 2) The COM saturable inductor switches at the same time as the burst discharge (Figure 23H). 3) The current starts to accumulate, flowing Cp to discharge and Lcom (Figure 231). 4) The Cp voltage passes through zero, and the current passing through the discharge begins to subside, but the Lp paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 57 (Please read the precautions on the back before filling this page) 丨Assembly 丨 • Order—: Line 丨 541777 A7 B7 V. Description of the Invention (55 Inductance and Lcom inductance force the current to continuously flow out of Cp, forcing Vcp to be negative. Because the Lcom inductance is greater than Lp, its current flow is much calmer than the discharge current flow Slower (Figure 23J). 5) The negative voltage of Cp (thus the negative voltage of Lp) reverses the discharge of the current flow, but the current flowing through Lcom remains in the same direction because the flow

Lcom之電流具有比Lp更大值,因而有較長的時間常數(第 23K圖)。 6) 流經Lcom之電流不再流出Cp之外,取而代之係流經 放電,呈現比Cp遠更低的阻抗。反向放電電流係由流經 Lcom之琶k及Cp之負電壓驅動。如此流經放電之負電流半 週期振幅因COM電感器的存在而增高(第23L圖)。 COM之最理想操作係取決於讓c〇M電感器的總電感 Lcom降至最低。有兩項因素可導致Lc〇m的值增高。第一 因素為Lcom可飽和開關需要有足夠v*s乘積。隨著¥*8乘 積要求的增高,由於需要有較大容積之鐵氧體磁心,故開 關的飽和電感也增高。初步C0M實驗係使用1〇〇奈秒傳輸 時間脈衝功率系統。充電Cp時要求磁心容積為8個複曲面 磁心,個別為1.0吋内徑X 2.5吋外徑X 〇·5吋厚度。後來實 驗使用發展用於2X程式之75奈秒傳輸時間脈衝功率系 統。使用此種傳輸時間,只需要6磁心,獲得c〇M開關之 飽和電感降低25%。 衫备Lcom電感之第二項因素為尖峰電容器匯流排之 縱向電感。至目前為止顯示的全部示意圖以單一塊狀電路 元件來表示Cp及Lp。此等電路元件實際上為分散。例如 本紙張尺度適用中國國家標準(CNs) A4規格(210X297公楚) (請先閲讀背面之注意事項再填寫本頁) •裝丨 訂 -線- 541777 A7 _____B7 五、發明説明(56 ) 16.5 nF尖峰電容係由28個個別值〇.59 nF之電容器組成。雷 射腔室更實際之示意代表圖顯示於第丨3圖。現在尖峰電容 分解成Cpl、CP2、...Cpn。頭電感同樣分解成個別元體。 除了 Cp及Lp外,組成元件為匯流排電感元件LM至。 匯流排電感組成元件表示尖峰電容器間於縱向方向的電 感。通常此種電路元件不重要,原因在於此種電路元件不 參與Cp-Lp-Zd回路,且其電感值比較脈衝功率模組之最末 階段内側的Lp_l電感器小。 當使用COM時因COM並非分散式元件,反而於單點饋 進尖峰電容器匯流排,故此種匯流排電感確實變重要。如 此於達到放電前,由Lcom流出的電流通過不等量之匯流排 電感。設計新穎尖峰電容器互連板,其儘可能排除尖峰電 谷為匯流排之頂與底間的磁通量。此種磁通量排除板的效 果可見於主放電後捕捉於尖峰電容器匯流排上的能量頻 率。加上下通量排除板,獲得每長度麗流排電感減少14%。 增加上通量排除板也獲得類似的減少。將匯流排電感減至 最低可大為提高COM系統效率。由於Lc〇m值較小,故Lc〇m 形成較面放電尖峰反向電流。 初步COM測量係使用36〇 kPa總壓及〇36让以分壓氟之 ArF氣體填補進行。此種氣體混合物表示由44〇 總壓之 基準線混合物壓力大為減低。13個月以來,脈衝功率及腔 室設計的多方面發展(大部分已經列舉如前)已經允許漸進 降低氣體壓力,同時仍然維持滿意的193奈米光學增益。希 望降低操作壓力係來自於實驗上發現使用較低雷射氣體壓 本紙張尺度適用?ia家標準---—59 -- (請先閲讀背面之注意事項再填寫本頁)Lcom's current has a larger value than Lp and therefore has a longer time constant (Figure 23K). 6) The current flowing through Lcom no longer flows out of Cp. Instead, it flows through discharge and presents a much lower impedance than Cp. The reverse discharge current is driven by the negative voltages of Pa and Kp flowing through Lcom. The half-cycle amplitude of the negative current flowing through the discharge in this way is increased by the presence of the COM inductor (Figure 23L). The optimal operation of COM depends on minimizing the total inductance Lcom of the coM inductor. Two factors can cause the value of Lcomm to increase. The first factor is that the Lcom saturable switch needs to have a sufficient v * s product. As the product requirement of ¥ * 8 increases, the ferrite core with a larger volume is required, so the saturation inductance of the switch also increases. The preliminary COM experiment uses a 100 nanosecond transmission time pulse power system. When charging Cp, the core volume is required to be 8 toric cores, each of which is 1.0 inch inner diameter X 2.5 inch outer diameter X 0.5 inch thickness. Later experiments used a 75 nanosecond transmission time pulse power system developed for 2X programs. Using this transmission time, only 6 cores are needed, and the saturation inductance of the com switch is reduced by 25%. The second factor of Lcom's inductance is the longitudinal inductance of the spike capacitor bus. All schematic diagrams shown so far represent Cp and Lp as a single block circuit element. These circuit elements are actually scattered. For example, this paper size applies Chinese National Standards (CNs) A4 specification (210X297). (Please read the notes on the back before filling this page.) The peak capacitance consists of 28 capacitors with individual values of 0.59 nF. A more realistic schematic representation of the laser cavity is shown in Figure 3. The peak capacitance is now decomposed into Cpl, CP2, ... Cpn. The head inductance is also broken down into individual elements. Except for Cp and Lp, the constituent elements are bus inductance elements LM to. The components of the bus bar inductance represent the longitudinal inductance between the spike capacitors. Such circuit components are usually not important because they do not participate in the Cp-Lp-Zd circuit and their inductance is smaller than the Lp_l inductor on the inside of the last stage of the pulse power module. When using COM, COM is not a decentralized component, but instead feeds the peak capacitor busbar at a single point, so this kind of busbar inductor does become important. Therefore, before reaching the discharge, the current flowing from Lcom passes through the unequal amount of bus inductors. Design a novel spike capacitor interconnect board that eliminates as much as possible the spike valley as the magnetic flux between the top and bottom of the bus. The effect of this magnetic flux rejection plate can be seen in the energy frequency captured on the spike capacitor busbar after the main discharge. Add the lower flux rejection board, and get a 14% reduction in inductor inductance per length. A similar decrease was obtained by increasing the upper flux exclusion plate. Minimizing the bus inductance can greatly improve the efficiency of the COM system. Because the value of Lc0m is small, Lc0m forms a reverse current that is higher than the surface discharge peak. The initial COM measurement was performed using a total pressure of 36 kPa and an ArF gas filled with partial pressure fluorine. This gas mixture indicates that the pressure of the baseline mixture is greatly reduced from the 44o total pressure. Over the past 13 months, multiple developments in pulse power and chamber design (most of which have been listed above) have allowed for a gradual reduction in gas pressure while still maintaining a satisfactory 193 nm optical gain. I hope that the reduction of operating pressure comes from the experiments that the lower laser gas pressure was found. Is this paper applicable? Ia standard-59-(Please read the precautions on the back before filling this page)

541777 A7 _________B7___ 一 五、發明説明(57 ) 力’高重複率效能(1000赫茲及以上)較為穩定。 於360 kPa壓力位準,使用c〇M時雷射系統效率降低為 20%至30%,特徵雙脈衝寬度只可對9〇0伏特或以上之Vco 值獲得。經若干實驗後,發現使用較低總壓力30〇 kPa,COM 效率的降低類似使用KrF雷射,低抵Vco值800伏特可獲得 成功的操作。各種充電電壓之不含COM之Vcp及雷射波形 顯示於第23Μ(1-4)圖。含COM之Vcp及雷射波形顯示於第 23Ν(1-4)圖。 使用COM時效率的變化結果顯示於第230圖。隨著總 氣體壓力降低,無COM配置與COM配置間的差異變小。第 23P圖顯示帶有COM及不含COM之193奈米脈衝持續時間 測量值。力π上COV[可將雷射脈衝持續時間由約8奈秒 FWHM增加至31奈秒FWHM。不幸8奈秒FWHM值並非2X 程式之基準線值。供比較,第!圖顯示2X程式基準線性能 之16.8奈秒FWHM脈衝持續時間。 第4節結果顯示COM可有效加倍193奈米光學脈衝持 續時間。其它性能標準也同等重要,例如線窄化光譜性能、 能量穩定性及電極溶蝕。本節含有採用COM之線窄化雷射 系統之性能測量值。使用KrF配置,原因在於目前高度線 窄化ArF系統仍然存在有多項未經控制的變數之故。 於原位帶有COM之線窄化效率實質上係與未使用 COM完全相同,如第23Q圖所示。於較低操作電壓,輸出 能相對於操作電壓僅顯示小缺陷,而於較高操作電壓則絲 毫也無差異。FWHM光譜性能測量值顯示於第23R圖。使 本紙張尺度適用中國國家標準(CNS) A4規格(2】0X297公釐) 60 (請先閲讀背面之注意事項再填寫本頁)541777 A7 _________B7___ One. V. Description of the invention (57) The force 'high repetition rate performance (1000 Hz and above) is relatively stable. At 360 kPa pressure level, the efficiency of the laser system is reduced to 20% to 30% when using coM, and the characteristic double pulse width can only be obtained for Vco values of 900 Volts or above. After several experiments, it was found that using a lower total pressure of 30 kPa, the reduction in COM efficiency is similar to using a KrF laser, and a low Vco value of 800 volts can achieve successful operation. Vcp and laser waveforms of various charging voltages without COM are shown in Figure 23M (1-4). Vcp and laser waveforms including COM are shown in Figure 23N (1-4). The change in efficiency when using COM is shown in Figure 230. As the total gas pressure decreases, the difference between the COM-free configuration and the COM configuration becomes smaller. Figure 23P shows measured 193nm pulse duration with and without COM. COV on force π [can increase the laser pulse duration from about 8 nanoseconds FWHM to 31 nanoseconds FWHM. Unfortunately, the FWHM value of 8 nanoseconds is not the baseline value of the 2X program. For comparison, the first! The graph shows the 16.8 nanosecond FWHM pulse duration of the 2X program baseline performance. The results in Section 4 show that COM can effectively double the duration of the 193 nm optical pulse. Other performance criteria are equally important, such as line narrowing spectral performance, energy stability, and electrode erosion. This section contains performance measurements for COM-narrowed laser systems. The KrF configuration is used because there are still many uncontrolled variables in the height-narrowing ArF system. The narrowing efficiency of the line with COM in place is essentially the same as the unused COM, as shown in Figure 23Q. At lower operating voltages, the output can show only small defects relative to the operating voltage, while at higher operating voltages there is no difference at all. FWHM spectral performance measurements are shown in Figure 23R. Make this paper size applicable to Chinese National Standard (CNS) A4 specifications (2) 0X297 mm 60 (Please read the precautions on the back before filling this page)

541777 A7 _B7_ 五、發明説明(58 ) 用COM結果獲得略微較低FWHM光譜、以及於全操作範圍 更為一致的光譜。使用COM之一致光譜最可能原因在於使 用COM於操作電壓範圍,脈衝形狀不會改變,但當未使用 COM時脈衝形狀劇變。 95%光譜性能顯示於第23S圖。隨著操作電壓的下降, 兩種配置之95%光譜積分降低。此種效果為眾所周知,相 信原因在於於較低操作電壓時腔穴增益減少。隨著腔穴增 益的減低,光譜之弱雷射「翼」比光譜主體受到更大衝擊, 原因在於以遠更為接近雷射臨限值之故。也眾所周知較長 脈衝時間導致95%光譜積分減小。用於未使用COM之正常 案例,壓抑光譜翼以及壓抑脈衝持續時間這兩種條件彼此 衝突,原因在於脈衝持續時間係隨著較低操作電壓而縮 短,但傾向於與翼的壓抑反向,增高95%光譜積分。由於 COM於幾乎全體操作電壓範圍可維持恆定脈衝形狀,故壓 抑光譜亦可達成完整效果。對較低操作電壓而言95%光譜 積分可獲得極端改進。例如於10毫焦耳輸出位準,使用 COM可獲得95%光譜積分降低45%。 對寬帶及線窄化兩項操作而言,能量安定性為另一項 重要性能參數。有數種方式可規定雷射之光能安定性,且 有多種可測量雷射光能安定性之操作模式。由過去發現當 於恆定電壓模式操作時,所有此等方法皆與能量標準差σ 簡單測量值成比例至某種程度。第23Τ圖顯示線窄化KrF操 作之恆定電壓模式中能量變化測量值。COM之低重複率性 能略比不含COM之性能差,但並無實質差異。由於目前無 本紙張尺度適用中國國家標率(CNS) A4規格(210X297公釐) 61 (請先閲讀背面之注意事項再填寫本頁) 裝丨541777 A7 _B7_ V. Description of the invention (58) The COM result is used to obtain a slightly lower FWHM spectrum and a more consistent spectrum over the entire operating range. The most likely reason for using the consistent spectrum of COM is that using COM in the operating voltage range does not change the pulse shape, but the pulse shape changes dramatically when COM is not used. 95% spectral performance is shown in Figure 23S. As the operating voltage decreases, the 95% spectral integration of the two configurations decreases. This effect is well known and is believed to be due to the reduction in cavity gain at lower operating voltages. With the decrease of cavity gain, the weak laser "wing" of the spectrum is more impacted than the main body of the spectrum, because it is closer to the laser threshold. It is also well known that longer pulse times result in a 95% reduction in spectral integration. For normal cases where COM is not used, the two conditions of suppressed spectrum wing and suppressed pulse duration conflict with each other, because the pulse duration decreases with lower operating voltage, but tends to reverse and increase the suppression of the wing 95% spectral integration. Since COM can maintain a constant pulse shape over almost the entire operating voltage range, the suppressed spectrum can also achieve a complete effect. Extremely improved 95% spectral integration for lower operating voltages. For example, at the output level of 10 millijoules, a 95% reduction in spectral integration can be achieved by 45% using COM. For broadband and line narrowing operations, energy stability is another important performance parameter. There are several ways to specify the laser energy stability, and there are several modes of operation that can measure the laser energy stability. It has been found in the past that all of these methods are proportional to a simple measurement of the energy standard deviation σ to some extent when operating in constant voltage mode. Figure 23T shows the measured value of the energy change in the constant voltage mode of the line narrowing KrF operation. The low repetition rate performance of COM is slightly worse than the performance without COM, but there is no substantial difference. As there is currently no Chinese paper standard (CNS) A4 size (210X297 mm) for this paper size 61 (Please read the precautions on the back before filling this page)

、可I可 I

.線I 541777 A7 B7 五、發明説明(59 ) 法確定的理由,能量安定性性能對重複率高於1 500赫茲時 係因使用COM而劣化。 一旦於較高重複率,能量穩定性性能低劣機率升高, 則於主放電之後,殘留於COM電感器之能量造成突崩電子 流活性。由於COM電感器係透過電流流動儲存能量,故當 放電熄滅且變成斷路時,跨COM電感器的電壓將點火,試 圖維持任何仍然存在的電流流動。跨COM電感器以及因而 跨電極的夠大的電壓點火將再度引發突崩電壓,但本次係 導致非均勻且不良前置游離之氣體介質,結果導致電弧或 , 突崩電子流。此等突崩電子流比較主放電具有極低能量, 前者為1毫焦耳比較後者為2-5焦耳。 雖然此等能量小,但因集中在極小區,故突崩電子流 能量密度遠高於主放電的能量密度。此種小區高能密度, 形成聲頻能,呈由電弧區發出過壓波形式。於低重複率, 此種聲頻能可能在下一雷射脈衝之前耗散,因而對雷射操 作極少造成影響。但於較高重複率,殘留大量聲頻能,結 果造成壓力變動干擾放電品質。此外,較高重複率趨近於 腔室容積的第一諧振,來自突崩電子流之聲頻增加可能泵 送此等諧振而於腔室内部形成聲頻駐波。 使用COM時提高突崩電子流密度之其它證據係在氟 消耗之比較上。使用COM,兩次注入間的時間縮短,暗示 符號用量提高33%,因而電極溶蝕速率同等增高。Cymer 發現電極溶蝕係與出現於電極間的突崩電子流尺寸、數量 以及頻率有強力關聯。使用COM似乎提高突崩電子流活 62 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 541777 A7 五、發明説明(6〇 性’因而預期對腔室使用壽命造成不良影響。 脈衝倍增器 另一項拉伸脈衝持續時間之技術係將各個脈衝分成二 部分或更多部分,延遲第一部份然後再接合各部分。其中 一項技術述於美國專利第6,〇67,311號,該案係讓與申請人 的雇主,以弓|帛方式併入此處。另—項技術述於美國專利 申凊案第1〇/006,913號,申請曰2001年u月29曰,以引用 方式併入此處。摘自該申請案之第24A、24B及24C圖說明 忒項技術。第24A及24C圖顯示脈衝拉伸前後結果。 可未變更本發明之範圍對本發明做出多種修改。熟諳 技藝人士了解多項其它可能變化。可設計系統用於4,〇〇〇 赫餘以外之高脈衝重複率,例如約3〇〇〇赫茲至6〇〇〇赫茲或 8000赫茲範圍的任何重複率。超過8〇〇〇赫茲的重複率可能 要袁使用不同豉風機系統。前述雷射系統前文說明特別用 於KrF之系統可經由改變氣體混合物以及修改193奈米操 乍之LNP及波長计而應用作為雷射。較好電極間隔由 敕5毛米細小至13.5耄米。舉例言之,使用馬達驅動器調 正第22A圖顯示的彎曲機構,經由調整線窄化光柵曲率可 提么、頻見的主動回授控制。或經由使用壓電裝置來控制線 乍化光栅曲率可提供遠更快速的頻寬控制。其它熱交換器 十為b處所示配置之顯然易見的修改。例如全部四個單 ^可組合成為單_單元。使用遠較大型散熱片於熱交換器 來緩和由於叢發模式雷射操作時造成氣體溫度快速變化效 應構成其顯著優勢。讀者須了解於極高脈衝率時,脈衝能 本紙張尺度^公楚) (請先閲讀背面之注意事項再填寫本頁) .裝丨 、^τ— .線丨 541777 A7 B7 五、發明説明(61 之回杈控制無需夠快速來使用緊接的前一脈衝控制某個特 定脈衝的脈衝能。例如可提供一種控制技術,其中某個特 定脈衝之脈衝能測量值可用來控制隨後第二或第三個脈 衝。將波長計標準具及光栅資料轉成波長值之演繹法則中 可做多項變化及修改。例如申請人發現標準具光學系統之 聚焦誤差造成極為微小的誤差結果,可能導致測量得的線 見遂大於貫際線寬。隨著接受測量之標準具邊帶直徑的變 大,誤差略微增加。此可藉由掃描雷射及某一範圍波長以 及監視當測量得的邊帶離開窗時的步進變化予以校正。校 正因數可基於於窗㈣量得的邊帶位置決定。如此前文揭 示非意®為限制性’本發明之範圍係由隨附之中請專利範 圍及其法定相當範圍決定。 (請先閲讀背面之注意事項再填寫本頁) 、?!1 線- 64 本紙張尺度適用中國國家標準A4規格(210X297公釐) 541777 A7 B7 五、發明説明(62 ) 元件標號對照 1...導體 12A,14A...殼體結構件 1K...狀態燈 12P...輸出耦合器 2-4…導體 12,14...殼體結構元件 2K...控制模組 13K...通風總成 2P...LNP 14K...鼓風機馬達 3K...壓縮頭模組 14 P·.·波長計 4 K...穩定核組 14...轉向鏡 4 P...向電壓組成元件 14A...彈簀 5K...自動開閉器模組 15K...線窄化模組 6K...MFT電源供應器 16K...鼓風機馬達控制器 6P...雷射腔室 16P...氮氣來源 7K...鼓風機馬達 17K...鼓風機馬達控制器 7···板 17P...氮氣掃除模組 7A...棱鏡板 18K...整流器模組 8K...雷射腔室模組 18A...陰極 8P...高電壓纜線 18P...過濾器 9K...介面模組 18 ’ 2 0...電極 10K...冷卻供給模組 19K...共振充電器模組 10A...雷射腔室 20K...高電壓電源供應器 10P...脈衝功率組成元件 模組 10…雷射 20A...陽極 11K…冷卻水分佈模組 20P...分配板 12K...雷射氣體供應模組 21K...交/直流分配模組 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 65 541777 A7 B7 56D...低電壓端 56E…主HV引線 56F...南電壓端子 58,58A...熱交換器 60.. .前置游離器管,壓縮頭 61.. .掃除管 61A...反射束通過部分 62.. .電容器排組 62A...掃除流 64.. .電感器,靜電捕捉單元 64A...掃除流 64A...風扇葉結構,可飽 和電感器 64A1...殼體 64A2···切槽 6 4 A 3…磁心 66…輪葉結構 68…區 68A...輸出搞合器模組 69.. .光二極體,偵測器 70A...伸縮節單元 72A...窗方塊 74A...出口 76A·.·窗 78A...掃除管線出口 (請先閲讀背面之注意事項再填寫本頁) 五、發明説明(63 ) 22P…流量監視器單元 22.. .直流電源供應器 24A...雷射控制器 33.. .輸出射束 40.. .整流器 42.. .電容器排組 46.. .風扇,固態開關 4 6 A…扇莱結構 46B...IGBT 開關 48.. .扇茱’電感器’陽極 支持流成形結構 48A...部件 48B…部件 49.. .鐵氧體環形線圈 50.. .上方流成形結構 52…電容器排組,氣體轉 動輪葉 54.. .電感器 54A1...夾套 54A2...冷卻管線 54A3…切槽 56.. .變壓器 56A...短管 56B...印刷電路板 56C...絕緣體 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 66 79.··標準具 80·..頂板,PZT堆疊,壓 173-5··.鏡 170…部分反射鏡 電驅動裝置 171. · ·鏡 80A.··壓電座 81_..凸緣,鑽石襯墊 172···能量偵測器 176…紅外線光栅 82.··底板,電容器排組, 177.··裂隙 步進器模組 82A·.·步進器馬達座 178.··透鏡 17 9…鏡 83···融合氧化矽間隔件 180…線性光二極體陣列 84.·.殼體,桿臂 182···鏡 85···指標,鏡座 183...透鏡 8 6 · ·.彈黃,鏡座 184···標準具總成 87...頂緣,伸縮節 190···參考校正單元 88··.漫射器 197·.·波長計處理器,内插 89···窗 演繹法則控制器 90…聚焦透鏡 200...標準直流電源供應器 95.··腔室窗單元 202…電容器 102·.·雷射控制器 204...控制板 10 4...波長計 206...IGBT 開關 106...LNP處理器 208···電感器 120···波長計單元 210...指令電壓 130···主軸 212...電壓回授 132…滾珠軸承 214...電流回授 136·.·密封元件 215…無約束二極體路徑 140…定子 300··.三相電源供應器 541777 A7 ------ B7 五、發明説明(64 ) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)Line I 541777 A7 B7 V. Reason for the determination of (59) method of the invention, the energy stability performance for repetition rate higher than 1 500 Hz is degraded due to the use of COM. Once at a higher repetition rate, the probability of poor energy stability performance increases, and after the main discharge, the energy remaining in the COM inductor causes bursting electron flow activity. Because the COM inductor stores energy through the flow of current, when the discharge goes out and becomes open, the voltage across the COM inductor will ignite, trying to maintain any current flow that still exists. Sufficient voltage ignition across the COM inductor and thus across the electrode will again trigger a burst voltage, but this time it results in a non-uniform and poorly pre-dissociated gas medium, which results in an arc or a burst of electron flow. These bursting electron currents have extremely low energy compared to the main discharge, the former being 1 millijoules and the latter being 2-5 joules. Although these energies are small, the energy density of the burst electron flow is much higher than that of the main discharge because it is concentrated in the polar cell. The high energy density of such a community forms acoustic energy, which is in the form of an overvoltage wave emitted from an arc region. At low repetition rates, this acoustic energy may be dissipated before the next laser pulse, and thus has little impact on laser operation. However, at higher repetition rates, a large amount of audio energy remains, resulting in pressure fluctuations that interfere with discharge quality. In addition, the higher repetition rate approaches the first resonance of the chamber volume, and an increase in the frequency of sound from the burst electron flow may pump these resonances to form an acoustic standing wave inside the chamber. Other evidence for increasing the burst electron flux density when using COM is based on the comparison of fluorine consumption. With COM, the time between injections is shortened, suggesting that the symbol usage is increased by 33%, so the electrode dissolution rate is also increased. Cymer found that the electrode erosion system is strongly related to the size, number, and frequency of the bursting electron currents that appear between the electrodes. The use of COM seems to improve the burst electron flow activity 62 (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 541777 A7 V. Description of the invention (60 'Therefore it is expected to adversely affect the life of the chamber. Another technique for pulse multipliers to stretch the duration of a pulse is to divide each pulse into two or more parts, delay the first part and then join the parts. One of them This technology is described in U.S. Patent No. 6, 〇67,311, which was assigned to the applicant's employer in a manner that is incorporated here. The other technology is described in U.S. Patent Application No. 10 / 006,913. , Application date: January 29, 2001, incorporated herein by reference. Figures 24A, 24B, and 24C from this application illustrate one technique. Figures 24A and 24C show the results before and after pulse stretching. May be unchanged The scope of the invention makes various modifications to the invention. Those skilled in the art will recognize many other possible variations. The system can be designed for high pulse repetition rates beyond 4,000 Hz, such as about 3,000 Hz to 600. Any repetition rate in the range of 0 Hz or 8000 Hz. Repetition rates in excess of 8000 Hz may require the use of different radon fan systems. The aforementioned laser system previously explained that the system specifically for KrF can be modified by changing the gas mixture and modifying 193 nanometers. The LNP and wavelength meter are used as lasers. The electrode spacing is preferably as small as 毛 5 hair to 13.5 ,. For example, use a motor driver to adjust the bending mechanism shown in Figure 22A. The curvature of the grating can be improved. Frequent active feedback control. Or by using a piezoelectric device to control the curvature of the grating, it can provide much faster bandwidth control. The other heat exchangers are the configurations shown at b. Obviously easy to modify. For example, all four units can be combined into a unit. Using a large heat sink in the heat exchanger to mitigate the rapid change in gas temperature caused by the burst mode laser operation constitutes its significant advantage. Readers must understand that at very high pulse rates, the pulse energy is the same as the standard paper size (please read the precautions on the back before filling this page). 541777 A7 B7 V. Description of the invention (The control of the 61 switch does not need to be fast enough to use the immediately preceding pulse to control the pulse energy of a specific pulse. For example, a control technology can be provided in which the pulse energy of a specific pulse is measured Can be used to control subsequent second or third pulses. There are many changes and modifications in the deduction rule for converting wavelength etalon and grating data into wavelength values. For example, the applicant found that the focus error of the etalon optical system caused extremely small The error result may cause the measured line width to be larger than the interline width. As the diameter of the etalon under measurement becomes larger, the error increases slightly. This can be achieved by scanning the laser and a range of wavelengths and monitoring The measured step change of the sideband as it leaves the window is corrected. The correction factor can be determined based on the position of the sidebands measured by the casement. Thus, the foregoing disclosure is not intended to be restrictive. The scope of the present invention is determined by the scope of the attached patents and their legal equivalents. (Please read the notes on the back before filling this page),?! 1 line-64 This paper size is applicable to the Chinese national standard A4 specification (210X297 mm) 541777 A7 B7 V. Description of the invention (62) Component label comparison 1. .Conductor 12A, 14A ... Shell structure 1K ... Status light 12P ... Output coupler 2-4 ... Conductor 12, 14 ... Shell structure element 2K ... Control module 13K .. .Ventilation assembly 2P ... LNP 14K ... Blower motor 3K ... Compression head module 14 P ... Wavelength meter 4 K ... Stable core group 14 ... Steering mirror 4 P ... Voltage components 14A ... Impulse 5K ... Automatic shutter module 15K ... Wire narrowing module 6K ... MFT power supply 16K ... Blower motor controller 6P ... Laser cavity Chamber 16P ... Nitrogen source 7K ... Blower motor 17K ... Blower motor controller 7 ... Plate 17P ... Nitrogen sweep module 7A ... Prism plate 18K ... Rectifier module 8K .. .Laser chamber module 18A ... cathode 8P ... high voltage cable 18P ... filter 9K ... interface module 18 '2 0 ... electrode 10K ... cooling supply module 19K ... Resonant charger module 10A ... Laser chamber 20K ... High voltage power supply 10P ... Impulse power component module 10 ... laser 20A ... anode 11K ... cooling water distribution module 20P ... distribution board 12K ... laser gas supply module 21K ... AC / DC distribution module (please Please read the notes on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 65 541777 A7 B7 56D ... 56V for low voltage terminal ... 56F for main HV lead ... Terminals 58, 58A ... Heat exchanger 60 .... Front dissociator tube, compression head 61 ... Sweep tube 61A ... Reflected beam passing section 62 .... Capacitor bank 62A ... Sweep stream 64 .. .Inductor, electrostatic capture unit 64A ... Sweep current 64A ... Fan leaf structure, saturable inductor 64A1 ... Housing 64A2 ... Slotted 6 4 A 3 ... Core 66 ... Blade structure 68 ... Zone 68A ... Output coupler module 69 ..... light diode, detector 70A ... retractable joint unit 72A ... window block 74A ... export 76A .... window 78A .. .Clean the outlet of the pipeline (please read the precautions on the back before filling this page) V. Description of the invention (63) 22P ... Flow monitor unit 22. DC power supply 24A ... Laser controller 33 .. Output beam 4 0 ... rectifier 42 .. capacitor bank 46 .. fan, solid-state switch 4 6 A ... fanlai structure 46B ... IGBT switch 48 .. fanjuu 'inductor' anode support flow forming structure 48A. .. 48B ... 49. Ferrite toroidal coil 50 .. Upflow forming structure 52 ... Capacitor bank, gas rotating vane 54 ... Inductor 54A1 ... Jacket 54A2 ... Cooling Pipeline 54A3 ... Groove 56 ..... Transformer 56A ... Short tube 56B ... Printed circuit board 56C ... Insulator This paper size applies to China National Standard (CNS) A4 (210X297 mm) 66 79. ·· Etalon 80 ... Top plate, PZT stacking, pressed 173-5 ..... Mirror 170 ... Partial mirror electric drive 171 .. Mirror 80A. Piezo base 81 .. Flange, diamond pad 172. ·· Energy detector 176 ... Infrared grating 82. · · Base plate, capacitor bank, 177. · · Slit stepper module 82A · · · Stepper motor mount 178 ... · Lens 17 9 ... Mirror 83 · ·· Fusion silicon oxide spacer 180… Linear light diode array 84 .. · Case, lever arm 182 ·· Mirror 85 ··· Indicator, lens holder 183 ... Lens 8 6 ··. Block 184 ... Calibrator assembly 87 ... Top edge, telescopic joint 190 ... Reference correction unit 88 ... Diffuser 197 ... Wavelength processor, interpolated 89 ... Window deduction controller 90 ... Focus Lens 200 ... Standard DC power supply 95 ...... Chamber window unit 202 ... Capacitor 102 ..... Laser controller 204 ... Control board 10 4 ... Wavelength meter 206 ... IGBT switch 106. .. LNP processor 208 ... inductor 120 ... wavelength meter unit 210 ... command voltage 130 ... spindle 212 ... voltage feedback 132 ... ball bearing 214 ... current feedback 136 ... · Sealing element 215… unconstrained diode path 140… stator 300… .three-phase power supply 541777 A7 ------ B7 V. Description of the invention (64) This paper size applies to Chinese National Standard (CNS) A4 Specifications (210X297mm) (Please read the notes on the back before filling this page)

67 541777 A7 B7 五、發明説明(65 ) 301-304.··金屬件 透鏡 302…散熱片結構,來源電 416…間隔件 容器 500…密封開閉器單元 303...散熱片 502…開閉器 304…凸緣單元,控制板 504…射束傾卸器 304A...内凸緣 5 0 6…功率計 304B...伸縮節 510...雷射輸出路徑 304C...外凸緣 512...路徑 305...電流進入 514…陰極,線圈 3 0 6...擾流器,線上混合 516...射束停止單元 器,殼體 518…可撓性臂 3 0 7...石兹心 520…永久磁鐵,線圈 307A-C...線圈 522...磁鐵 308...c字形封 524…偵測器單元 400...雙埠口螺帽,微處理 526…可撓性臂 器,會聚透鏡 530,532…馬達 402...0形環,可程式邏輯 534...馬達控制器 裝置,準直透鏡 536...賓馬達控制器 404...執行與資料記憶體 540...陽極 排組,標準具殼體窗 541...陰極 406...RAM,RAM記憶體, 541-542···蓋 漫射元件 5 4 3...心轴 408...RAM記憶體排組, 544...電介質間隔件 RAM緩衝器 546...散熱片,陽極支持桿 410...類比/數位轉換器, 548...電流回路 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 6867 541777 A7 B7 V. Description of the invention (65) 301-304 ... Metal lens 302 ... heat sink structure, source of electricity 416 ... spacer container 500 ... sealed shutter unit 303 ... heat sink 502 ... shutter 304 ... flange unit, control board 504 ... beam dumper 304A ... inner flange 5 0 6 ... power meter 304B ... telescopic joint 510 ... laser output path 304C ... outer flange 512. ..Path 305 ... current into 514 ... cathode, coil 3 0 6 ... spoiler, on-line mixing 516 ... beam stop unit, housing 518 ... flexible arm 3 0 7 ... Shizixin 520 ... permanent magnet, coil 307A-C ... coil 522 ... magnet 308 ... c-shaped seal 524 ... detector unit 400 ... double port nut, micro-processing 526 ... flexible Arm, focusing lens 530, 532 ... motor 402 ... 0 ring, programmable logic 534 ... motor controller device, collimating lens 536 ... bin motor controller 404 ... executing and data memory Body 540 ... Anode row set, etalon housing window 541 ... Cathode 406 ... RAM, RAM memory, 541-542 ... Cover diffusion element 5 4 3 ... Mandrel 408 ... .RAM memory bank, 544 ... Media spacer RAM buffer 546 ... heat sink, anode support rod 410 ... analog / digital converter, 548 ... current loop (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 Specification (210X297 mm) 68

Claims (1)

541777 々、申請專利範圍 1. 一種可於脈衝重複率超過每秒3微脈衝操作之極值脈 衝率氣體放電雷射系統,該雷身: A) —雷射腔室,其含有一種雷身氣體且有二細長 電極,界定放電區,其氣流路徑有漸進加寬的截面於電 極下游俾允許回收出現於放電區的大量百分比靜電壓 降, B) 切線型風扇,其係用於於放電氣產生雷射氣體 之足夠氣體速度,俾當於每秒4,〇〇〇脈衝或以上範圍之 重複率“作4,於各個脈衝後,而於次一脈衝前,由該 放電器實質上清除全部放電產生的離子, c)一熱交換器系統,其可由該雷射氣體去除至少16 千瓦熱能, D) —脈衝功率系統,其係配置成可對電極提供電 脈衝,該電脈衝足夠以每秒約4,〇〇〇脈衝之速率帶有經 過精準控制之脈衝能於約5毫焦耳範圍產生雷射脈衝, 以及 E) —種雷射束測量與控制系統,其可測量脈衝能、 能波長及能脈衝頻寬、或實質上每個脈衝伴以回授控制 脈衝能及波長。 2·如申請專利範圍第丨項之雷中該放電雷射系統為 KrF準分子雷射系統;以及氣體包含氪、氟及氖。 3 ·如申請專利範圍第2項之雷射中該腔室也包含放電 區上游之輪葉結構,用於規度化放電區上游之氣體速 度0 本紙張尺度適用中國國家標準(CNs) A4規格(210 X 297公釐) 69 /、中该風扇包含由二益 •如申请專利範圍第1項之雷 刷直流馬達驅動之主軸。丨, 5.如申請專利範圍第4項之雷_其中該馬達為水冷式 達。 一 勺 申請專利範圍第4項之雷射V,其.^該馬達各自包含一 定子’以及該馬達各自包含-磁力^子容納於隔開轉子 與雷射氣體之壓力杯内部。ϋ 7.如申請專利範圍第4項之雷射ί,令中該切線風扇包含由 該鋁備料切削之扇葉結構。^ i 8·如申请專利範圍第7項之雷羞其中該扇葉結構之外側 直徑約為5时。 9.如申請專利範圍第4項之雷^其中該馬達為無感應器 焉達以及進一步包含一控制馬達多一之主馬達控制器 以及控制另一馬達之賓馬達控制器。 讥如申請專利範圍第i項之雷g其中該有散熱片熱交換 系統為水冷式。 ;|氣: η·如申請專利範圍第10項之雷中該熱交換器系統包 含至少四個分開水冷式熱交換。 12·如申請專利範圍第10項之雷%^中該熱交換器系統包 含至少一個具有管形水流通熱交換器,其中至少設 置一擾流器於該路徑。 丨. α如申請專利範圍第u項之雷^中該四個熱交換器各 自包含一管形水流通道含有一擾流器。 Η.如申請專利範圍第旧之雷〜其中該脈衝功 包 M1777541777 々, patent application scope 1. An extreme pulse rate gas discharge laser system capable of operating with a pulse repetition rate exceeding 3 micropulses per second, the laser body: A) —laser chamber containing a laser body gas There are two slender electrodes that define the discharge area, and the airflow path has a gradually widened cross section downstream of the electrode. It allows a large percentage of the static voltage drop that occurs in the discharge area to be recovered. B) A tangential fan is used to generate discharge gas. The sufficient gas velocity of the laser gas, when the repetition rate in the range of 4,000 pulses per second or more is "made 4, after each pulse, but before the next pulse, substantially all the discharge is cleared by the discharger. Generated ions, c) a heat exchanger system that can remove at least 16 kW of thermal energy from the laser gas, D) a pulsed power system configured to provide electrical pulses to the electrodes, the electrical pulses being sufficient to The rate of 4, 000 pulses with a precisely controlled pulse can generate laser pulses in the range of about 5 millijoules, and E)-a laser beam measurement and control system that can measure the pulse energy , Energy wavelength and energy pulse bandwidth, or substantially every pulse accompanied by feedback control pulse energy and wavelength. 2. If the laser in the patent application scope item 丨 the discharge laser system is a KrF excimer laser system; And the gas contains krypton, fluorine, and neon. 3 · As in the laser in the scope of patent application No. 2, the chamber also contains a blade structure upstream of the discharge zone, which is used to regulate the gas velocity upstream of the discharge zone. Applicable to Chinese National Standards (CNs) A4 specification (210 X 297 mm) 69 / 、 The fan contains the main shaft driven by Eryi • If the patent application scope item 1 the lightning brush DC motor. 丨, 5.If the patent is applied for Laser in scope item 4_ where the motor is water-cooled. One spoonful of laser V in the scope of patent application for item 4, which ^ each of the motor contains a certain stator and each of the motors contains a magnetic force. Open the inside of the pressure cup of the rotor and the laser gas. Ϋ 7. If the laser in item 4 of the scope of the patent application, the tangential fan includes a blade structure cut by the aluminum stock. ^ I 8 · If the scope of the patent application The thunder of item 7 The diameter of the outer side of the fan blade structure is about 5. 9. As described in the patent application scope item 4 ^ where the motor is sensorless Tanda and further includes a main motor controller that controls one more motor and controls another motor The guest motor controller. 讥 If the thunder g of the scope of the patent application, the heat exchange system with fins is water-cooled.; | Air: η · The heat exchanger system as the thunder of the scope of the patent application. Contains at least four separate water-cooled heat exchangers. 12. As described in item 10 of the scope of patent application, the heat exchanger system includes at least one heat exchanger with a tubular water flow, and at least one spoiler is provided in the heat exchanger system. path.丨. As described in item u of the patent application, the four heat exchangers each include a tubular water flow channel and a spoiler. Η.If the patent application scope is the oldest thunder ~ among which the pulse work package M1777 申清專利範圍 含水冷式電氣組成元件。 15=申咖_14㈣㈣冷式組成元件 之至少-者為於高於12釋*之高電壓 之组 成元件。 、 16·如申請專利範圍第15項之^甘 罘員之田身^其中该兩電壓係使用電 而舁地電位隔離,冷卻水係流經該電感器。 7·:申請專利範圍第1項之雷其中該脈衝功率系統包 卜共振充電系統俾將充类^器充電至準確控制電 懕。 卜:丨 (請先閲讀背面之注意事項再填寫本頁) 18·如申請專利範圍第17項之雷p其中該共振充電系統 各迪不(De-Qing)電路。 :> 19.如申請專利範圍第17項之雷齡中該共振充電系統 含一洩下電路。 ί'?::; 2〇·如申請專利範圍第η項之雷^中該共振充電系 含迪京電路及洩下電路。 21.如申請專利範圍第i項之雷其中該脈衝功率系 含一種至少由三個電源供慮器並聯排列組成之充 統0 22·如申請專利範圍第丨項之雷身/,其中該雷射束測量與老 制系統包含一標準具單元、一光二極體陣列、一可程$ 邏輯裝置、以及光學裝置用以聚焦來自標準具單元之· 射光至光二極體陣列,其中該可程式邏輯裝置經程式海 劃俾分析來自光二極體陣列之資料而決定標準具 於光二極體陣列之所在位置。 包 包 統包 統包 電系 邊The scope of patent application for water-cooled electrical components. 15 = Shenca_14㈣㈣Cold-type component At least-the component is a component with a high voltage higher than 12 release *. 16. If the 15th item of the scope of the application for patent is ^ Gan's field body ^, where the two voltages are electrically isolated with ground potential, and the cooling water flows through the inductor. 7 ·: Lei in the scope of patent application No. 1 in which the pulsed power system includes a resonance charging system, which charges the charger to an accurate control voltage. Bu: 丨 (Please read the precautions on the back before filling this page) 18 · If the thunder of item 17 of the patent application scope, the resonant charging system has a De-Qing circuit. : ≫ 19. The resonant charging system according to item 17 of the scope of patent application contains a drain circuit. ί '? ::; 2〇 · If the thunder ^ in the scope of the patent application, the resonance charging system includes Dijing circuit and discharge circuit. 21. The lightning power of item i in the scope of patent application, wherein the pulse power includes a charge system consisting of at least three power supply units arranged in parallel. The beam measurement and old system includes an etalon unit, a photodiode array, a programmable logic device, and an optical device for focusing the light emitted from the etalon unit to the photodiode array, wherein the programmable logic The device analyzes the data from the photodiode array by programming sea and determines the position of the etalon in the photodiode array. Package package package package package package 訂— 541777 A8 B8 C8 D8 申請專利範圍 23. 如申請專利範圍第22項之雷截其中該測量與控制系統 也包含一微處理器其經程式規劃用以由該可程式邏輯 裝置定位之邊帶資料計算波員寬。 24. 如申請專利範圍第22項之雷^其中該可程式邏輯裝置 係以演繹法則程式規劃,用以基於邊帶之測量計算波長 及頻寬。 L ^ 2 5.如申請專利範圍第2 4項之雷_其中該可程式邏輯裝置 係配置成可比每秒之1/4,00j>味的速度計算波長及頻 寬。 _ 、 26. 如申請專利範圍第22項之雷#其中該標準具單元包含 -繞射漫射元件。 ”齡 27. 如申請專利範圍第丄項之雷射;^爭、^步包含一線窄化單 元其包含至少部分藉PZT驅動器驅'動之微調鏡。 28. 如申請專利範圍第27項之雷中該微調鏡部分係藉 步進器馬達驅動。 29·如申請專利範圍第27項之雷^,:進一步包含一前置微調 裝置。 1:. 30·如申請專利範圍第27項之雷_進一步包含一主動微調 裝置其包含一學習演繹法則七:: 31. 如申請專利範圍第27項之雷一步包含一調適性前 饋演繹法則。 32. 如申請專利範圍第27項之雷#、其中該線窄化單元包含 一光柵界定一光栅表面以及一_裝置用以強迫掃除 鄰近該光柵表面之氣體。 本紙張尺度適用中國國家標準(_) M規格(21〇χ297公釐) 72 (請先閲讀背面之注意事項再填寫本頁) 、可丨 、申請專利範圍 33·如申請專利 氣。 34.如申請專 範圍第32項之雷淤:其中該掃除氣體為氮 氣。 利範圍第32項之雷射Y,其中該掃除氣 體為氦 35·如申請專利範圍第!項之雷<,進一步包含_種氛 %除系統其包含一包含氮氣聲氮氣掃除系統?、 •二申請專利範圍第旧之雷,進「步包含一種氮氣掃 示枳組包含流量監視器,該雷杯儀含掃除通風管用以 由雷射輸送通風掃除氣體。 37·如申請專利範圍第!項之雷步包含一開閉器單 凡,其包含電動操作開閉器餐功率計,開閉器及功率 計可定位於帶有指令信號之輸出束路徑。 38. 如申請專利範圍第27項之雷一步包含一射束密封 系統,提供介於腔室第一窗與線窄化單元間的第一射束 封、以及腔室第二窗與輸出麵合器單元間的第二射束 封,射束封各自包含金屬伸纖|。 39. 如申請專利範圍第38項之雷_丨其中該第一及第二射束 封各自配置成容易由雷射腔鱗盡?換。 後如申請專利範圍第%項之雷為中該射束封各自未含 彈性體,提供與腔室之震動隔離,提供射束列與大氣氣 體之隔離,以及允許不受_的更換雷射腔室而為干择 ⑽或輸_合器單元Λ:撤 - 41.如申請專利範圍第i項之雷%其中該測量與控制系統 匕吞用以为裂來自雷射之小董比例輸出脈衝之一 中清專利範園 射束分裂器,-用以指示小量比例部分至脈衝能谓測器 之第一射束分裂器,以及一隔離裝置,其係用於隔離界 人射束分裂、、二次射束分裂器及脈衝能偵測氣窗 之容積與該測量與控制系統其餘部分俾界限一個隔離 區 〇 42·如:請專利範圍第41項之雷廳一步包含一種用以使 用掃除氣體掃除隔離區之掃臀赛:置。 43.如申請專利範圍第42項之雷身·中該雷射進一步包含 -輸出耦合器單元以及一輸出窗單元,該掃除裝置係配 出 置成來自隔離區之通風也掃除輸出_馬合器單元及輸 窗單元。 f Λ 申請專利範圍第以之雷#其中該腔室也包含一電 机回路,该回路具有肋帶有概略:矩形截面,而其縱向係 於雷射氣體流動方向。 以 45. 如申請專利範圍第i項之雷應中該腔室包含陽極 及電貝間隔件位於陽極_鮮上俾改良於二電極間 域之雷射氣流。 ! 1 包 46. 如申料利範圍w項之雷|其中該脈衝功率系統。 含-電暈板’其係藉金屬桿電連接至尖♦電容器排組之 電 電容器及電極之-,金屬桿之長度經選擇可提供較高 感。Order — 541777 A8 B8 C8 D8 patent application scope 23. If the patent application scope of the thunderbolt is 22, the measurement and control system also includes a microprocessor, which is programmed by the program to locate the sideband by the programmable logic device Data calculated wave width. 24. For example, in the scope of patent application No. 22, the programmable logic device is planned by a deductive rule program to calculate the wavelength and bandwidth based on the measurement of the sidebands. L ^ 2 5. As described in item 24 of the scope of patent application _ where the programmable logic device is configured to calculate the wavelength and bandwidth at a speed comparable to 1 / 4,00j > flavor per second. _ 、 26. If the scope of the patent application is # 22 的 雷 #, wherein the etalon unit contains a -diffractive diffusing element. "Age 27. For example, the laser of the scope of the patent application; ^ contention, ^ steps include a line narrowing unit, which contains at least part of the fine-tuning mirror driven by the PZT driver. 28. Such as the scope of the patent application of the laser 27 The fine-tuning mirror part is driven by a stepper motor. 29 · If the thunder of item 27 of the scope of patent application ^ ,: further includes a front trimming device. 1 :. 30 · If the thunder of scope 27 of patent application_ It further includes an active fine-tuning device which includes a learning deduction rule 7: 31. If the step of Lei in the 27th patent application scope includes an adaptive feedforward deduction rule. 32. In the 27th of the patent application scope, Lei #, where The line narrowing unit includes a grating to define a grating surface and a device for forcibly sweeping the gas adjacent to the surface of the grating. This paper size applies the Chinese national standard (_) M specification (21〇297297 mm) 72 (please first Read the precautions on the back and fill in this page). You can apply for patent scope 33. If you apply for patent gas. 34. If you apply for thunder silt in the special scope of item 32: the sweep gas is nitrogen. Shoot Y, where the sweeping gas is helium 35. If the patent application scope item! Thunder <, further contains _ species atmosphere removal system which contains a nitrogen sound nitrogen cleaning system ?, • two of the oldest patent application scope Lei, further includes a nitrogen sweep display unit including a flow monitor. The mine cup instrument contains a sweep vent for the ventilation of the sweep gas by the laser. 37. If the scope of the patent application is No.!, The step contains a shutter Shan Fan, which includes an electrically operated shutter power meter, the shutter and power meter can be positioned on the output beam path with a command signal. 38. If the thunder step of the 27th patent application scope includes a beam sealing system, provide A first beam seal interposed between the first window of the chamber and the line narrowing unit, and a second beam seal interposed between the second window of the chamber and the output facet unit, each of the beam seals includes a metal stretch fiber. 39. If the thunder of the scope of the patent application is 38, the first and second beam seals are each configured to be easily replaced by the laser cavity. If the thunder of the scope of the patent application is the middle scope, Elastomer-free Provide vibration isolation from the chamber, provide isolation of the beam train from the atmospheric gas, and allow the laser chamber to be replaced or replaced by the laser unit without replacement of the laser chamber Λ: Withdrawal-41. Such as applying for a patent The% of thunder in the range i. Among them, the measurement and control system is used to split one of the output pulses of the small director from the laser. Zhongqing Patent Fanyuan beam splitter, which is used to indicate a small proportion to the pulse energy. The first beam splitter of the measuring device and an isolation device are used to isolate the volume of the human beam splitter, the secondary beam splitter, and the volume of the pulse energy detection transom and the rest of the measurement and control system.俾 Boundary of an isolation zone 〇42. For example, the mine hall in item 41 of the patent scope includes a step of hip-sweeping competition for sweeping the isolation zone with a sweeping gas. 43. If the laser body No. 42 in the scope of patent application, the laser further includes an output coupler unit and an output window unit, the cleaning device is configured to ventilate from the isolation area and also to clean the output_ 马 合 器Unit and window unit. f Λ The scope of application for patent No. # 之 之 雷 # Wherein the chamber also contains a motor circuit, the circuit has a ribbed profile: rectangular cross section, and its longitudinal direction is dependent on the laser gas flow direction. 45. As in the application of the scope of patent application item i, the chamber contains an anode and an electrical spacer located on the anode_fresh top, which is improved in the laser current between the two electrodes. !! 1 package 46. If you apply for the range of w thunder | Where the pulse power system. The corona-containing plate is electrically connected to the tip of the capacitor bank by a metal rod. The length of the metal rod can be selected to provide a higher sense.
TW91109840A 2001-05-11 2002-05-10 Four kHz gas discharge laser system TW541777B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/854,097 US6757316B2 (en) 1999-12-27 2001-05-11 Four KHz gas discharge laser
US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/029,319 US6765946B2 (en) 2000-01-25 2001-10-17 Fan for gas discharge laser
US10/000,991 US6795474B2 (en) 2000-11-17 2001-11-14 Gas discharge laser with improved beam path
US10/012,002 US6625191B2 (en) 1999-12-10 2001-11-30 Very narrow band, two chamber, high rep rate gas discharge laser system

Publications (1)

Publication Number Publication Date
TW541777B true TW541777B (en) 2003-07-11

Family

ID=29716340

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91109840A TW541777B (en) 2001-05-11 2002-05-10 Four kHz gas discharge laser system

Country Status (1)

Country Link
TW (1) TW541777B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697173B (en) * 2019-10-09 2020-06-21 研能科技股份有限公司 Gas-detectable portable power device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697173B (en) * 2019-10-09 2020-06-21 研能科技股份有限公司 Gas-detectable portable power device
US11686715B2 (en) 2019-10-09 2023-06-27 Microjet Technology Co., Ltd. Mobile power device capable of detecting gas

Similar Documents

Publication Publication Date Title
KR100850450B1 (en) Very narrow band, two chamber, high rep rate gas discharge laser system
TW569508B (en) Very narrow band, two chamber, high rep rate gas discharge laser system
US6882674B2 (en) Four KHz gas discharge laser system
JP2002043669A (en) 4 KHz GAS DISCHARGE LASER
US8958143B2 (en) Master oscillator—power amplifier drive laser with pre-pulse for EUV light source
US6381257B1 (en) Very narrow band injection seeded F2 lithography laser
US6370174B1 (en) Injection seeded F2 lithography laser
US20030138019A1 (en) Two chamber F2 laser system with F2 pressure based line selection
JP2005502208A (en) Line width selectable two-chamber laser system
JP2008294477A (en) Super narrow band, two-chamber, high repetition rate gas discharge laser system
TW541777B (en) Four kHz gas discharge laser system
WO2000038286A9 (en) ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE
RU2000125098A (en) KRYPTON FLUORIDE EXCIMER LASER (KrF) FOR INDUSTRIAL APPLICATIONS WITH HIGH RELIABILITY AND MODULAR DESIGN
TW573389B (en) Six to ten KHz, or greater gas discharge laser system
TW507408B (en) Very narrow band, two chamber, high rep rate gas discharge laser system
TW445686B (en) Reliable modular production quality narrow-band high rep rate ArF excimer laser
TW469680B (en) F2 laser with visible red and IR control
TW564585B (en) Line selected F2 two chamber laser system
RU2298271C2 (en) Line-selectable double-chamber f2 laser system

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent