TW573389B - Six to ten KHz, or greater gas discharge laser system - Google Patents

Six to ten KHz, or greater gas discharge laser system Download PDF

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Publication number
TW573389B
TW573389B TW91119520A TW91119520A TW573389B TW 573389 B TW573389 B TW 573389B TW 91119520 A TW91119520 A TW 91119520A TW 91119520 A TW91119520 A TW 91119520A TW 573389 B TW573389 B TW 573389B
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Taiwan
Prior art keywords
patent application
laser system
gas discharge
gas
scope
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TW91119520A
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Chinese (zh)
Inventor
Tom A Watson
Richard C Ujazdowski
Alex P Ivaschenko
Richard L Sandstrom
Robert A Shannon
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Cymer Inc
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Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US10/029,319 external-priority patent/US6765946B2/en
Priority claimed from US10/012,002 external-priority patent/US6625191B2/en
Priority claimed from US10/036,676 external-priority patent/US6882674B2/en
Priority claimed from US10/141,216 external-priority patent/US6693939B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of TW573389B publication Critical patent/TW573389B/en

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Abstract

The present invention provides gas discharge laser systems capable of reliable long-term operation in a production line capacity at repetition rates in the range of 6,000 to 10,0000 pulses power second. Preferred embodiments are configured as KrF, ArF and F2 lasers used for light sources for integrated circuit lithography. Improvements include a modified high voltage power supply capable for charging an initial capacitor of a magnetic compression pulse power system to precise target voltages 6,000 to 10,0000 times per second and a feedback control for monitoring pulse energy and determining the target voltages on a pulse-by-pulse basis. Several techniques are disclosed for removing discharge created debris from the discharge region between the laser electrodes during the intervals between discharges. In one embodiment the width of the discharge region is reduced from about 3 mm to about 1 mm so that a gas circulation system designed for 4,000 Hz operation could be utilized for 10,000 Hz operation. In other embodiments the gas flow between the electrodes is increased sufficiently to permit 10,000 Hz operation with a discharge region width of 3 mm. To provide these substantial increased gas flow rates, Applicants have disclosed preferred embodiments utilize tangential forms of the prior art but with improved and more powerful motors and novel bearing designs. New bearing designs include both ceramic bearings and magnetic bearings. In other embodiments, some or all of the gas circulation power is provided with a blower located outside the laser chamber. The outside blower can be located in the laser cabinet or in separate location.

Description

573389 A7 ,____ B7 ________ ______ .-. -… -- 五、發明説明(1 ) 相關技藝說明 (請先閲讀背面之注意事項再填寫本頁) 本發明係2002年5月7日提出申請編號第w/141,216 號、2001年12月21曰提出申請編號第1〇/〇36,676號、2001 年11月30日提出申請編號第1〇/〇12,〇〇2號、2001年1〇月17 • 曰提出申請編號第^/029,319號、2001年8月29曰提出申請 _ 編號第09/943,343號、2001年5月11曰提出申請編號第 φ 09/854,097號、2001年2月27日提出中請編號第09/794,782 •、可| 號、2〇01年1月23曰提出申請編號第〇9/768,753號、2〇0〇年 10月6日提出申請編f虎第〇9/684 629號、和200〇年6月19曰 提出申請編號第09/597,812號等之部份繼續申請案。本發 明係論及一些放電氣體雷射,以及係特別論及一些高重複 率氣體放電雷射。 發明之背景 放電氣體雷射 :線丨 放電氣體雷射係知名的,以及自I960年雷射被發明後 • 不久便可被利用。彼等兩電極間之高電壓放電,可激勵一 雷射氣體’以產生一氣態增益媒質。一内含此增益媒質之 • 共振腔,可容許光波被激勵放大,其接著方以一雷射光束 之形式,自該空腔抽取出。大部份此等放電氣體雷射,係 在一脈波模態中運作。 激態分子雷射 激態分子雷射,係一特殊類型之放電氣體雷射,以及 彼等自1970年代中期,便已為人所知。一可用於積體電路 平版印刷術之激態分子雷射的描寫,係說明在1991年六月 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 4 573389 A7 __ —___B7 _ 五、發明説明(2 ) 11曰獲頒之美國專利編號第5,023,884號名為“Compact Exeimer Laser.”(袖珍型激態分子雷射)中。此專利已讓渡給 中請人之雇主,以及此專利係藉由參照而合併進此說明書 中。此專利,884中所說明之激態分子雷射,係一高重複率 之脈波雷射。在第丨和2圖中,所顯示係其雷射1〇之主要組 件。(第1圖係對應於專利,884之第1圖,以及第2圖係對應 於其第7圖)。其放電22係在兩相隔約5/8吋之長形(約23吋) 電極18與20間。彼等先存技藝式雷射如所說明者之重複 率,典型地係在每秒約100至2000個脈衝之範圍内。此等高 重複率雷射,通常係設置有一氣體循環系統。在上文所指 之雷射中,此係以一具有大約23個葉片48之長形鼠籠式風 扇46來完成。此風扇葉片結構,係略長於其電極丨8和2〇, 以及可提供足夠之循環,以便在彼等脈波之運作速率下, 使該等電極間之放電擾動氣體,可在彼等脈波間被淨化。 其風扇46之軸桿130,如為專利,884之第9圖的第2A圖中所 示,係受到兩個滚珠軸承132之支撐。其雷射中所使用之氣 體,係包含活性極大之氟氣。其風扇轉子驅動風扇軸桿 130,係藉由專利,884之第9行第45列處所解釋之封合構件 136,被封合在彼等外殼結構構件12和14所提供之同一環境 系統内,以及其馬達定子140,係在其封合構件136之外部, 以及因而可受到保護,而免於氟氣之腐蝕作用。然而,其 軸承132和此軸承中所使用之潤滑劑,將會受到其放電室氣 體之腐蝕。其軸承和軸承潤滑劑之腐蝕,將會污染到其氣 體0 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) (請先閲讀背面之注意事項再填寫本頁) .、可| :線丨 573389 A7 B7 五、發明説明( 模組設計 此等激態分子雷射,當被用於積體電路平版印刷術中 時,典型地係運作於,,連續不斷”之積體電路製造生產線 中,以每小時生產數以千計有價值之積體電路;所以,其 停工時間將會十分昂貴。基於此一理由,其大部份組件係 被組織成模組,而可在數分鐘内加以更換。 線窄化 彼等用於平版印刷術之激態分子雷射,典型地務必要 使其輸出光束,在頻寬上縮短至一微微米以下。此“線窄化” 典型地係在一線窄化模組(稱作‘‘線窄化組件,,或“LNp”)内 元成,其係形成為該雷射之共振腔的背部。此LNp係由一 些特製之光學組件所構成,彼等係包括一些稜鏡、一些面 鏡、和一光栅。隨著重複率之增加,其LNP所維持之穩定 性能’將變為一項嚴重之挑戰。 脈波功率 美國專利編號第5,023,884號中所說明之類型的放電 氣體雷射,係利用一類似第3圖中所說明之脈波電力系統, 藉以在其兩電極間產生放電。在此類先存技藝式系統中, 有一直流電源供應器22,可使一稱作“充電電容器,,或 “C〇”42之電容器組,充電至一有關每一脈波被稱作“充電電 壓’’之預定及受控的電壓。此充電電壓之幅度,在此等先存 技藝式單元中,可能是在大約500至1〇〇〇伏特之範圍内。在 C〇已充電至其預定之電壓後,一固態開關46將會閉合,而 容許C0上面所儲存之電能,能極迅速地環行經過一系列由 6 (請先閲讀背面之注意事項再填寫本頁)573389 A7, ____ B7 ________ ______ .-. -...-V. Description of the invention (1) Relevant technical description (please read the notes on the back before filling out this page) The present invention is an application numbered May 7, 2002 w / 141,216, application number 10 / 〇36,676 on December 21, 2001, application number 10 / 〇12,002, filed on November 30, 2001, October 17, 2001 • Application No. ^ / 029,319, Application No. ^ / 029,319, August 29, 2001 _ No. 09 / 943,343, Application No. φ 09 / 854,097, May 11, 2001, Submitted on February 27, 2001 Please No. 09 / 794,782 •, No. | Application, No. 09 / 768,753 filed on January 23, 2001, Application No. 09/684 629 filed on October 6, 2000 No., and June 19, 2000, the application number No. 09 / 597,812 and other parts of the application continued. The present invention deals with some discharge gas lasers, and specifically deals with some high repetition rate gas discharge lasers. BACKGROUND OF THE INVENTION Discharge gas lasers: Lines 丨 Discharge gas lasers are well known and will be available shortly after the laser was invented in I960. The high voltage discharge between their two electrodes can excite a laser gas' to produce a gaseous gain medium. A resonant cavity containing this gain medium allows the light wave to be excited and amplified, which is then extracted from the cavity as a laser beam. Most of these discharge gas lasers operate in a pulse mode. Excimer lasers Excimer lasers are a special type of discharge gas laser, and they have been known since the mid-1970s. A description of excimer lasers that can be used in integrated circuit lithography, which states that in June 1991, this paper size applied the Chinese National Standard (CNS) A4 specification (210X297 mm) 4 573389 A7 __ —___ B7 _ 5 2. Description of the invention (2) US Patent No. 5,023,884, entitled "Compact Exeimer Laser." (Pocket Excimer Laser), was issued on the 11th. This patent has been transferred to the applicant's employer, and this patent is incorporated into this specification by reference. The excimer laser described in this patent, 884, is a pulse laser with a high repetition rate. In figures 丨 and 2, the main components of the laser 10 are shown. (Figure 1 corresponds to the patent, Figure 1 to 884, and Figure 2 corresponds to Figure 7). The discharge 22 is between two elongated (about 23 inches) electrodes 18 and 20 separated by about 5/8 inches. The repetition rate of their prior art lasers, as illustrated, is typically in the range of about 100 to 2000 pulses per second. These high repetition rate lasers are usually provided with a gas circulation system. In the lasers referred to above, this is accomplished with an elongated squirrel-cage fan 46 having approximately 23 blades 48. This fan blade structure is slightly longer than its electrodes, 8 and 20, and can provide sufficient circulation so that at the operating speed of their pulse waves, the discharge between these electrodes disturbs the gas, which can be between their pulse waves. Be purified. The shaft 130 of the fan 46 is supported by two ball bearings 132, as shown in Figure 2A of Figure 9 of Figure 884. The gas used in the laser contains extremely active fluorine gas. The fan rotor drives the fan shaft 130, and the sealing member 136 explained in the 9th row and the 45th column of the patent, 884 is sealed in the same environmental system provided by their shell structural members 12 and 14, And its motor stator 140 is external to its sealing member 136 and can therefore be protected from the corrosive effects of fluorine gas. However, its bearing 132 and the lubricant used in this bearing will be corroded by the discharge chamber gas. Corrosion of its bearings and bearing lubricants will pollute its gases. 0 This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 public love) (Please read the precautions on the back before filling this page). : Line 丨 573389 A7 B7 V. Description of the invention (Modular design These excimer lasers, when used in integrated circuit lithography, typically operate on, and continuously, ”integrated circuit manufacturing production lines In China, thousands of valuable integrated circuits are produced per hour; therefore, downtime will be very expensive. For this reason, most of its components are organized into modules, which can be used within minutes Line narrowing. Excimer lasers that are used in lithography, typically must have their output beams shortened to less than a micron in bandwidth. This "line narrowing" is typically based on A line narrowing module (called a `` line narrowing module, or "LNp") is formed by internal elements, which are formed as the back of the laser cavity. This LNp is composed of some special optical components. Some of them , Some mirrors, and a grating. As the repetition rate increases, the stable performance maintained by its LNP will become a serious challenge. Pulse Power Discharge gas of the type described in US Patent No. 5,023,884 Laser uses a pulsed power system similar to the one shown in Figure 3 to generate a discharge between its two electrodes. In this prior art system, there is a DC power supply 22, which can be called a "Charging capacitors, or capacitor banks of" C0 "42, are charged to a predetermined and controlled voltage referred to as" charging voltage "for each pulse. The magnitude of this charging voltage is stored here first. In the technical unit, it may be in the range of about 500 to 1,000 volts. After C0 has been charged to its predetermined voltage, a solid state switch 46 will be closed, allowing the electrical energy stored on C0 to Very quickly looped through a series of 6 (Please read the notes on the back before filling this page)

、可I :線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 ^_^B7_ 五、發明説明(4 ) 電容器排組52、62、和82、和電感器48、54、和64所組成 之磁壓縮電路和一變壓器56,藉以在該等電極間,產生一 範圍在大約16,000伏特内之高電壓電位,此將會產生一可 持續大約50 ns之放電。 在市場上之先存技藝式系統中,固態開關之閉合與放 電間的時間,係在大約5微秒之範圍内;然而,c〇精確充電 至其預先選定之電壓,過去係需要大約4〇〇微秒,其就小於 大約2,000 Hz之脈波重複率而言,係足夠快速。讀者理應 瞭解的是,C〇之精確充電係極為重要,因為Cg上面之電壓 位準的控制,在此等系統中,係其雷射操作員針對其放電 電壓之唯一實際控制,此復為其雷射脈波能量之基本決定 因子。 熱交換器 積體電路平版印刷術所用之先存技藝式激態分子雷 射,典型地係需要一系統,來冷卻其雷射氣體,其係因放 電和其經由上述循j辰風扇輸入之能量兩者而受熱。此典型 地係以第1圖中之58處所顯示之一水冷式附有散熱片之熱 交換器,來加以完成。一雷射加倍或更高倍之重複率,將 會使其雷射内所產生之熱量增加超過兩倍,此主要是因為 其使雷射氣體循環所需要之功率,將會隨著其所需要之氣 體速度的立方而增加。 光束品質之控制 當用作積體電路平版印刷術所需之光源時,其雷射光 束參數(亦即,脈波能量、波長、和頻寬),典型地係受到 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁), 可 I: Line 丨 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 573389 A7 ^ _ ^ B7_ V. Description of the invention (4) Capacitor row groups 52, 62, and 82, and inductor 48 A magnetic compression circuit consisting of, 54 ,, and 64 and a transformer 56 are used to generate a high voltage potential in the range of about 16,000 volts between these electrodes, which will generate a discharge that can last for about 50 ns. In the state-of-the-art systems on the market, the time between the closing and discharging of the solid-state switch is in the range of about 5 microseconds; however, c0 is accurately charged to its pre-selected voltage, which in the past required about 40%. 0 microseconds, which is fast enough for pulse repetition rates of less than about 2,000 Hz. The reader should understand that the precise charging of C0 is extremely important because the control of the voltage level above Cg is the only actual control of its discharge voltage by its laser operator in these systems. The basic determinant of laser pulse energy. Existing state-of-the-art excimer lasers used in heat exchanger integrated circuit lithography typically require a system to cool their laser gas due to electrical discharges and the energy they input via the above-mentioned fan. Both are heated. This is typically done with a water-cooled heat exchanger with fins shown at 58 in Figure 1. A laser doubling or higher repetition rate will more than double the amount of heat generated in the laser. This is mainly because the power required to circulate the laser gas will be as long as it needs it. The cube of gas velocity increases. Beam quality control When used as a light source for integrated circuit lithography, its laser beam parameters (ie, pulse wave energy, wavelength, and bandwidth) are typically subject to this paper's standards and apply Chinese national standards (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

573389 A7 ------------£7______ 五、發明説明(5 ) 嚴格規範之限制。此將需要其脈波能量逐脈波之回授控 制’和其線窄化輸出光束之波長多少略慢的回授控制。此 脈波率之加倍或更多倍,將要求此等回授控制系統執行更 為快速。 所希望的為一脈波氣體放電雷射有關更佳之雷射設 計’以便能運作於在每秒大約4,000個脈波之範圍内的重複 率〇 本發明概要 本發明係提供一些可在每秒8,000至1 〇,〇〇〇〇個脈波功 率之範圍内的重複率下之生產線產能中可靠而長期運作的 氣體放電雷射系統。彼等較佳之實施例在配置上,係以 KrF、ArF和F2雷射作為積體電路平版印刷術之光源。其改 良處係包括一可將一磁壓縮脈波電力系統之起始電容器充 電至每秒6,000至10,0000次之精確目標電壓的修飾式高電 壓電源供應器,和一可監控脈波能量及逐脈波地決定該等 目標電壓之回授控制。所揭示之幾種技術,可在放電之區 間期間,自該等雷射電極間之放電區域,移除放電所建立 之碎屑。在一實施例中,其放電區域之寬度,係自大約3 mm 縮小至大約1 mm,以致一就4,000 Hz之運作所設計的氣體 循壞糸統,可被利用於10,000 Hz之運作。在其他之實施例 中,該等電極間之氣流,係使增加至足以容許3 mm之放電 區域寬度,有10,000 Hz之運作。為提供此等大幅增加之氣 體流動率,吾等申請人係揭示一些較佳之實施例,彼等係 利用其先存技藝之切向風扇,但係具有經改良及更有力之 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)573389 A7 ------------ £ 7 ______ V. Description of the invention (5) Strict specification restrictions. This will require its pulse-wave energy pulse-by-pulse feedback control 'and its line-narrowing output beam's slightly slower feedback control. Doubling or more of this pulse rate will require these feedback control systems to perform faster. It is desirable to have a better laser design for a pulsed gas discharge laser to 'operate at a repetition rate in the range of approximately 4,000 pulses per second. SUMMARY OF THE INVENTION The present invention provides a number of Reliable and long-term gas discharge laser system in production line capacity at repetition rates in the range of 10,000 pulse powers. In their preferred embodiments, KrF, ArF, and F2 lasers are used as the light source for integrated circuit lithography. The improvement includes a modified high-voltage power supply capable of charging a starting capacitor of a magnetic compression pulse wave power system to a precise target voltage of 6,000 to 10,000 times per second, and a pulse wave energy monitoring device. The feedback control of these target voltages is determined pulse by pulse. The disclosed techniques can remove debris created by the discharge from the discharge area between the laser electrodes during the discharge interval. In one embodiment, the width of the discharge area is reduced from about 3 mm to about 1 mm, so that a gas circulation system designed for operation at 4,000 Hz can be used for operation at 10,000 Hz. In other embodiments, the airflow between the electrodes is increased enough to allow a discharge area width of 3 mm to operate at 10,000 Hz. In order to provide these greatly increased gas flow rates, our applicants have disclosed some preferred embodiments. They are tangential fans using their pre-existing techniques, but they have an improved and more powerful paper standard applicable to China. National Standard (CNS) A4 Specification (210X297 mm) (Please read the precautions on the back before filling this page)

573389 A7 --------- Β7 五、發明說明(6 ) 馬達和新型軸承的設計。此等新軸承設計,係包括陶瓷質 軸承和磁性軸承兩者。在其他之實施例中,某些或所有之 氣體循環功率,係由一設置在其雷射放電室之外部的鼓風 機來提供。此外部鼓風機,可使位於其雷射機殼内或獨立 之位置内。 本發明亦提供了一些改良,藉以容許移除其增加放電 速率所致之額外熱量,再加移除其增加風扇功率所致之額 外熱量。本發明之實施例,可應用至單腔室氣體放電雷射 系統,以及可應用至一些類似]^〇1>八雷射系統等雙腔室雷 射系統。 在此一申請案中,吾等申請人首先係說明一種特別為 4,000 Hz之運作而設計的雷射系統,以及係論及一些小量 改良,以容許大幅增加其脈波重複率。吾等申請人接著說 明一些可大幅增加自其雷射系統之熱移除,和其大幅增加 其雷射氣體流量之主要修飾。吾等申請人係詳細說明其可 提供高至10,000 Hz或以上之速率下的精確電氣脈波之脈 波電力系統的設計,詳細說明其可監測及控制此等脈波重 複率下之雷射脈波的光譜性質之波長計和控制設備,以及 詳細說明吾等申請人之極快速響應線窄化設備。吾等申請 人亦說明較佳之雷射>¥*化技術和設備、本發明針對 ΜΟΡΑ系統之應用例、此等高重複率系統有關其他包括一 光束傳輸系統和一脈波倍增器等有用之改良。 圖示簡單說明 第1、2、和2Α圖係顯示一先存技藝式雷射系統之特徵; 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公爱) 9 (請先閲讀背面之注意事項再填寫本頁) -、\叮| 573389 A7 B7 五、發明説明(l〇 ) 號,來控制其雷射之機能, •一壓縮頭模組3K,其為雷射脈波電力系統之一部 分,以及可提供其電氣脈波最後階段之脈波壓縮, 其可使一位於其雷射放電室之頂部上面的波峰電 容器排組充電, • 一亦稱作波長計之穩定化模組4K,其可監控該等雷 射脈波,以及可提供一些回授信號,來控制波長和 脈波能量, •一附功率表之自動光閥模組5K, •一 MFT電源供應器6K,其可提供高電壓功率,給一 位於其雷射放電室模組上面之金屬氟化物陷波器 (過濾器), •一左側鼓風機馬達7K, •一雷射放電室模組8K, •一介面模組9K,其可提供一些界面電路,以使其雷 射控制與平版印刷機控制緊密配合, •一冷卻水供應模組10K, •一冷卻水分配模組11K, •一雷射氣體供應模組12K, •一通風組體13K,其係包括一煙塵偵測器,而可使 雷射室氣體排放至外部大氣, •一右側鼓風機馬達14K, •一線窄化模組15K,其亦稱作線窄化組件或LNP, •一右側鼓風機馬達控制器16K, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 13 (請先閲讀背面之注意事項再填寫本頁) 丨·裝—573389 A7 --------- Β7 V. Description of the invention (6) Design of motor and new bearing. These new bearing designs include both ceramic and magnetic bearings. In other embodiments, some or all of the gas circulation power is provided by a blower placed outside the laser discharge chamber. The external blower can be located inside its laser enclosure or in a separate location. The present invention also provides some improvements to allow removal of the extra heat caused by its increased discharge rate and the extra heat caused by its increased fan power. The embodiments of the present invention can be applied to a single-chamber gas discharge laser system, and to some similar dual-chamber laser systems, such as the eight laser system. In this application, our applicant first explained a laser system specifically designed for operation at 4,000 Hz, and discussed some minor improvements to allow for a substantial increase in its pulse repetition rate. Our applicant then goes on to explain some of the major modifications that can significantly increase heat removal from its laser system, and its substantial increase in laser gas flow. Our applicants have explained in detail the design of the pulse wave power system that can provide accurate electrical pulses at rates up to 10,000 Hz or more, and specify that they can monitor and control laser pulses at these pulse wave repetition rates Wavelength and control equipment for the spectral properties of waves, and extremely fast response line narrowing equipment that details our applicants. Our applicants also explain better laser technology and equipment, application examples of the present invention for MOPA systems, and these high repetition rate systems for other useful information including a beam transmission system and a pulse multiplier. Improvement. The diagram briefly illustrates that Figures 1, 2, and 2A show the characteristics of a pre-existing technology laser system; this paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 public love) 9 (Please read the note on the back first Please fill in this page again)-, \ ding | 573389 A7 B7 V. Inventive note (l〇) to control its laser function, • A compression head module 3K, which is part of the laser pulse power system And pulse wave compression which can provide the final stage of its electrical pulse wave, which can charge a crest capacitor bank above the top of its laser discharge chamber, • a stabilization module 4K, also known as a wavelength meter, which Can monitor these laser pulses, and can provide some feedback signals to control the wavelength and pulse energy, • An automatic light valve module 5K with a power meter, • An MFT power supply 6K, which can provide high Voltage power to a metal fluoride trap (filter) located on top of its laser discharge chamber module, • a left blower motor 7K, • a laser discharge chamber module 8K, • an interface module 9K, It can provide some interface circuits to The laser control works closely with the control of the lithographic printing machine. • A cooling water supply module 10K, • a cooling water distribution module 11K, • a laser gas supply module 12K, • a ventilation group 13K, which includes A smoke and dust detector, so that the laser chamber gas can be discharged to the outside atmosphere. • A right blower motor 14K, • a line narrowing module 15K, which is also known as a line narrowing module or LNP, • a right blower motor control 16K, this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 13 (Please read the precautions on the back before filling this page) 丨 · Packing—

、可I可 I

573389 A7 _________B7 五、發明説明(11 ) •一左側鼓風機馬達控制器17K, •一整流器模組18Κ,其係包含一 Co充電電容器排 (請先閲讀背面之注意事項再填寫本頁) 組’和一可起始電氣脈波及可提供早期脈波壓縮和 脈波電壓放大之電路, •一可對Co電容器排組提供極快速共振充電之共振 充電器模組19K, •一高電壓電源供應器模組2〇κ,其可自標準電力公 司三相AC電力,產生高電壓dc電力, •一 AC/DC配電模組21K, •一氦氣淨化模組(未示出), •一波形穩定模組(未示出)。 第4 A圖係本發明之第一較佳實施例的雷射放電室丨〇 a 之截面圖。其主要放電室組件有:外殼結構構件12A和 14A、陰極18A和陽極20A、上游預電離器管60、波峰電容 器排組62、和靜電捕集器單元64(彼等全係與第1圖中所示 之先存技藝的對應組件相類似)。其放電室係包括一新式陽 極座氣流整形結構48、一新式上氣流整形結構50、氣體轉 向葉片52、一新式5吋直徑切線型風扇葉片結構46A、和四 個水冷式熱里父換器早元5 8 A。第13圖係顯示一類似而具 有一新式電流回路548之他型放電室配置。 第16圖係一可顯示此雷射系統對其輸出光束之波長 和脈波能量的控制係屬重要之特徵的方塊圖。 彼等優於先存技藝式氣體放電雷射之重要改良係包 括: 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -14 _ 573389 A7 ---------!1 _ 五、發明説明(12 ) 麵 1) 供放電室雷射氣體循環用之改良式流動路徑 2) 水冷式脈波電力系統 3) 具快速控制演算法之超快速波長計573389 A7 _________B7 V. Description of the Invention (11) • A left blower motor controller 17K, • a rectifier module 18K, which contains a Co charging capacitor bank (please read the precautions on the back before filling this page) Group 'and A circuit that can initiate electrical pulses and provide early pulse compression and pulse voltage amplification. • A resonant charger module 19K that provides extremely fast resonant charging to Co capacitor banks. • A high-voltage power supply module. Group 20k, which can generate high-voltage dc power from standard electric power three-phase AC power, • an AC / DC power distribution module 21K, • a helium purification module (not shown), • a waveform stabilization module Group (not shown). FIG. 4A is a cross-sectional view of the laser discharge cell 1a according to the first preferred embodiment of the present invention. Its main discharge chamber components are: shell structural members 12A and 14A, cathode 18A and anode 20A, upstream pre-ionizer tube 60, crest capacitor bank 62, and electrostatic trap unit 64 (all of them and the first figure) The corresponding components of the prior art shown are similar). The discharge chamber system includes a new anode base airflow shaping structure 48, a new upper airflow shaping structure 50, a gas turning blade 52, a new 5-inch diameter tangential fan blade structure 46A, and four water-cooled heat exchangers. $ 5 8 A. Fig. 13 shows a similar configuration of another type of discharge cell with a novel current loop 548. Fig. 16 is a block diagram showing that the laser system controls important features of the output beam wavelength and pulse energy. Important improvements that are superior to pre-existing gas discharge lasers include: This paper is sized for China National Standard (CNS) A4 (210X297 mm) -14 _ 573389 A7 ---------! 1 _ 5. Description of the invention (12) Surface 1) Improved flow path for laser gas circulation in discharge chamber 2) Water-cooled pulse wave power system 3) Ultra-fast wavelength meter with fast control algorithm

4) 結合PZT和步進馬達驅動調制面鏡之新式高工作周 期LNP 5) 具雙水冷式無電刷DC驅動器鼓風機馬達而附有特 定控制器之大切向風扇 6) 供光學器件保護用之超純氮氣淨化系統 7) 具瓦特表之封合式光閥 8) 改良式熱交換器組態 9) 光束封合系統 l〇)LNP有關之氦氣淨化 11) 具一些與氣流平行之肋片的電流回路 12) 供放電室阻抗最佳化用之電感板 13) 有關性能壽命之電極最佳化。 窄放電寬度 本發明之一較佳實施例在設計上,可使用一為4,〇〇〇 Hz之運作而設計的雷射系統,而運作於4,〇〇〇_1〇,〇〇〇 之脈波重複率下。在此一實施例中,其放電區域,業已自 早先約3% mm之放電區域的設計,窄化至約1至以111111。(為 提供一窄放電寬度之較佳電極設計,將說明下節中)。此將 可容許以大約67 m/s之氣體速率,來清理該等電極18A與 20A間之放電區域。在此氣體速率下,其來自領前每一脈 波之脈波的碎屑,在放電之時刻,係在其放電區域下游之 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)4) New high duty cycle LNP combined with PZT and stepper motor driven modulation mirror 5) Large tangential fan with special controller with dual water-cooled brushless DC driver blower motor 6) Ultra-pure for optical device protection Nitrogen purification system 7) Sealed light valve with wattmeter 8) Improved heat exchanger configuration 9) Beam sealing system 10) LNP related helium purification 11) Current loop with some ribs parallel to the air flow 12) Inductive plate for optimization of discharge chamber impedance. 13) Optimization of electrode for performance life. Narrow Discharge Width A preferred embodiment of the present invention can be designed by using a laser system designed for operation at 4,000 Hz, and operated at 40,000 to 100,000. Pulse repetition rate. In this embodiment, the discharge area has been narrowed to about 1 to 111111 from the previous design of the discharge area of about 3% mm. (A better electrode design to provide a narrow discharge width is explained in the next section). This will allow the discharge area between these electrodes 18A and 20A to be cleaned at a gas velocity of about 67 m / s. At this gas rate, the debris from the pulses of each pulse in front of the collar is at the time of discharge, and the paper size downstream of its discharge area applies the Chinese National Standard (CNS) A4 specification (210X297 mm)

(請先閲讀背面之注意事項再填寫本頁) 訂(Please read the notes on the back before filling this page)

573389 A7 B7 收 五、發明説明(Π 0.5 cm處。為達成此等速率,所使用係5对直徑之切向風扇 單元(其葉片結構之長度為26吋),以及其旋轉速率業已增 加至大約3500 rpm。為達成此一性能,此實施例係利用兩 個額定值各約2 kw之馬達,彼等可共同傳遞高至大約4kw 之驅動功率,給其風扇葉片結構。舉例而言,在8〇〇〇 Hz 之脈波率下,其放電將會加入大約12 kw之熱能至其雷射氣 體。為移除其放電所產生之熱量連同其風扇所加入之熱 量,其係設置有四個獨立式水冷附散熱片之熱交換器單元 5 8A。該等馬達和熱交換器將詳細說明於下文。 熱交換器組件 上述熱交換器中之一的橫截面圖,係顯示在第21圖 中。此熱交換器之中間區段係被切除,但係顯示出其兩端 部。第21A圖係顯示該熱交換器可容納熱膨脹和收縮之端 部的放大視圖。 該熱交換器之組件,係包括一附散熱片之結構3〇2, 其係機製自實心銅(CU 11000),以及係包括每吋十二片之 政熱片303。水流係經由一具有〇·33对孔徑之軸向通道。一 位於此軸向通道内之塑料湍流器306,可防止此軸向通道内 之水的層化,以及可防止該通道之内部表面上的熱界面層 之^/成。其挽曲性凸緣早元304,係一焊接之單元,复係 由内部凸緣304A、伸縮囊304Β、和外部凸緣3〇4c所構成。 該熱交換器單元,係包括三片c-形密封層3〇8,其可密封其 在熱S父換器中流動之水,使與其雷射氣體相隔離。其伸 縮囊304B,可容許其熱交換器相對於放電室之膨脹和 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) (請先閲讀背面之注意事項再填寫本頁) …裝- •、一叮丨 573389 A7 _B7_ 五、發明説明(I4 ) 縮。其一雙埠螺帽400,可使其熱交換器通道,連接至一標 準5/16吋之定位彎管接頭,其復係連接至一水源。其0-形 環402,可在其螺帽400與其附散熱片結構302間,提供一密 封層。 瑞流裔 在一較佳之實施例中,其湍流器係由四個現貨長形同 軸混合元件所構成,彼等典型地係被用來使環氧樹脂組成 分相混合,以及係可得自3M公司(Static Mixer,Part No· 06-131229-00)。此同軸混合器係顯示在第21和21A圖中之 306處。此同軸混合器可迫使水沿一每一間距距離(其係0.3 对)反轉其順時針方向之一般性螺旋形路徑而流動。此湍流 器可顯著改良其熱交換器之性能。吾等申請人所做之測試 顯示,加入該湍流器,可使維持其相當之氣體溫度條件所 需要的水流量,減少約略5之因數。 較佳之冷卻水流量控制 就本發明之較佳實施例而言,吾等申請人係將一離合 螺線管水控制閥,加至其放電室冷卻水供應器。在其先前 之設計中,冷卻水係由一在控制上基於一感測其雷射氣體 溫度之快速作用性溫度的比例閥,來加以控制。此等比例 閥在某些類似其閥之50與100%間之運作範圍内的流量 下,通常係運作極為良好。為在整個冷卻水流量範圍内, 提供良好之控制,有一數位式離合流量控制閥加入,而與 該比例閥串聯。此等數位式閥可加以程式規劃,藉以運作 於一些特定之周期,諸如一秒之周期,而使其閥打開一秒 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 17 (請先閲讀背面之注意事項再填寫本頁) •訂·573389 A7 B7 Closing 5. Description of the invention (about 0.5 cm. In order to achieve these rates, 5 pairs of diameter tangential fan units (with a blade structure of 26 inches in length) and the rotation rate have been increased to approximately 3500 rpm. In order to achieve this performance, this embodiment uses two motors with a rating of about 2 kw each, which can collectively transmit a driving power up to about 4 kw to the fan blade structure. For example, in At a pulse rate of 800 Hz, its discharge will add about 12 kw of thermal energy to its laser gas. In order to remove the heat generated by its discharge and the heat added by its fan, it is provided with four Free-standing water-cooled heat exchanger unit with heat sink 5 8A. These motors and heat exchangers will be described in detail below. Heat exchanger assembly A cross-sectional view of one of the above heat exchangers is shown in Figure 21 The middle section of this heat exchanger is cut away, but its ends are shown. Figure 21A is an enlarged view showing the ends where the heat exchanger can accommodate thermal expansion and contraction. The components of the heat exchanger, System The structure of the hot plate is 302. Its mechanism is from solid copper (CU 11000), and it is a political heat plate 303 including 12 pieces per inch. The water flow is through an axial channel with a hole diameter of 33.33. The plastic turbulator 306 in the axial channel can prevent the stratification of water in the axial channel, and can prevent the formation of the thermal interface layer on the inner surface of the channel. Its bending flange early element 304 is a welded unit, which is composed of an inner flange 304A, an expansion bladder 304B, and an outer flange 304c. The heat exchanger unit includes three c-shaped sealing layers 308. It can seal the water flowing in the heat exchanger, and isolate it from the laser gas. Its telescopic bladder 304B allows the expansion of the heat exchanger relative to the discharge chamber, and this paper size applies the Chinese National Standard (CNS) A4 specifications (210X297). (Please read the precautions on the back before filling out this page.)… Install-•, Yiding 丨 573389 A7 _B7_ 5. Description of the invention (I4). Its dual-port nut 400 can make Its heat exchanger channel is connected to a standard 5/16 inch positioning elbow joint. It is connected to a water source. Its 0-ring 402 can provide a sealing layer between its nut 400 and its heat sink structure 302. In a preferred embodiment, Rui Liuyi has four turbulators in stock. Consists of elongated coaxial mixing elements, which are typically used to phase-mix the epoxy resin composition, and are available from 3M Company (Static Mixer, Part No. 06-131229-00). This coaxial mixer It is shown at 306 in Figures 21 and 21A. This coaxial mixer forces water to flow along a general spiral path that reverses its clockwise direction at every pitch distance (which is 0.3 pairs). This turbulator can significantly improve the performance of its heat exchanger. Tests performed by our applicants have shown that adding the turbulent can reduce the water flow required to maintain its equivalent gas temperature conditions by a factor of approximately 5. Better cooling water flow control. For the preferred embodiment of the present invention, our applicant has added a clutch solenoid water control valve to its discharge chamber cooling water supplier. In its previous design, the cooling water was controlled by a proportional valve that was controlled based on a fast-acting temperature that sensed the temperature of its laser gas. These proportional valves usually perform extremely well at flow rates within the operating range of some similar valves between 50 and 100%. In order to provide good control over the entire cooling water flow range, a digital clutch flow control valve is added in series with the proportional valve. These digital valves can be programmed to operate in specific cycles, such as one-second cycles, to open the valves for one second. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 17 ( (Please read the notes on the back before filling out this page) • Order ·

573389 A7573389 A7

573389 A7 ___B7 五、發明説明(I6 ) 外之冷卻作用’其放電室底部未被風扇佔用之全部體積和 陽極座,係被機製成一些各約〇·5 mm厚之大散熱片,而沿 其大約70 cm長之放電室,使該等散熱片之中心相間2 mm。較佳地,大約有八個精確孔,鑽經該等散熱片,以及 有一些與其放電室底部同材質之冷卻水管,係使熱配合進 此等孔内,藉以提供其放電室所需之冷卻作用。水可自其 兩側注入,而如上文所討論,每一方向有一半之流量。 增加雷射氣體流量速度 雷射氣體流動路徑 在此較佳之實施例中,其進出放電區域之氣體流量, 業已對彼等先存技藝式雷射放電室做過大幅之改良。其葉 片結構66在設計上,可標準化其區域68内之氣體速度,使 恰在其風扇葉片結構下游大約2 0 m/s處。在第13圖之實施 例中,其放電室頂部係經機製,以提供一類似之氣體流量 整形表面。其氣體之速度,接著會在其放電區域内,被加 速至67 m/s之設計速度。在其放電區域之中心的下游大約4 对處,其流動截面係自約5/8对,而以20度之角度,增加至 其氣體被四個轉向葉片52轉動前之大約4吋。此將可容許恢 復橫經其放電區域之大百分率的壓力降。其如第13八(1)圖 中所示之鯨骨形電流回路548,係以雷射機製自〇 〇15吋厚 之鎳合金(UNS N04400),以及係彎曲成如第13A(3)至 13A(8)圖中所示之形狀,以使23片肋片對氣體流量呈現最 小之阻力。每一肋片之截面為〇·〇15吋X 〇·〇9〇吋,而使其長 維度在一與氣體流量方向相平行之方向中。 本紙張尺度顧巾關家鮮(CNS) A4規格⑽χ297公爱) 19 (請先閲讀背面之注意事項再填寫本頁)573389 A7 ___B7 V. Description of the invention (I6) The cooling effect outside the bottom of the discharge chamber is not occupied by the fan's entire volume and the anode base, which are made by the machine into some large 0.5mm thick heat sinks, and along the Its discharge chamber, which is approximately 70 cm long, centers the heat sinks 2 mm apart. Preferably, there are about eight precise holes drilled through the fins and some cooling water pipes of the same material as the bottom of the discharge chamber, which are heat fit into these holes to provide the cooling required by the discharge chamber. effect. Water can be injected from both sides, and as discussed above, there is half the flow in each direction. Increasing Laser Gas Flow Velocity Laser Gas Flow Path In this preferred embodiment, the gas flow rate into and out of the discharge area has been significantly improved in their prior art laser discharge cells. The blade structure 66 is designed to standardize the gas velocity in its area 68 so that it is approximately 20 m / s downstream of the fan blade structure. In the embodiment of Fig. 13, the top of the discharge chamber is machined to provide a similar gas flow shaping surface. The velocity of its gas will then be accelerated to a design velocity of 67 m / s in its discharge area. At about 4 pairs downstream of the center of its discharge area, its flow cross-section is from about 5/8 pairs, and at an angle of 20 degrees, increases to about 4 inches before its gas is rotated by the four turning blades 52. This will allow for a large percentage of the pressure drop across its discharge area. The whale-shaped current circuit 548 shown in Figure 13A (1) is a laser mechanism made from a 015-inch-thick nickel alloy (UNS N04400), and is bent as shown in Figures 13A (3) to 13A. (8) The shape shown in the figure, so that the 23 fins show the least resistance to the gas flow. The cross-section of each fin is 0.015 inches by 0.99 inches, with its long dimension in a direction parallel to the gas flow direction. This paper is standard Gu Guguan Fresh (CNS) A4 size ⑽χ297 public love) 19 (Please read the precautions on the back before filling this page)

573389 A7 _B7_ 五、發明説明(I7 ) 積體化主絕緣體 為改良其放電區域内之流動路徑,本發明之較佳實施 例,係利用一主絕緣體,其内積體化有一或多之預電離器。 此基本上係結合第4A圖中之60處所顯示的預電離器管和 第4A圖中之50處所顯示早期版本的主絕緣體。一較佳實施 例之主絕緣體的截面圖,係顯示在第4C圖中。此主絕緣體 係顯示在50A處,以及一接地棒有關之槽孔係顯示在60A 處。其陰極之位置係顯示在18A1處。此絕緣體係構成自高 密度氧化鋁,其係購自公司在加州Newark之LTD Ceramics 等供應商。此一設計可使氣體流動阻力大幅降低,而容許 在相同之鼓風機功率下,顯著增加其流動速度。第4D圖係 顯示一陰極-陽極組態,其可顯示此改良式流動路徑,而相 照於第4A圖和甚至於第13A(1)圖和第13A(2)圖中所顯示之 組態。 增加氣體流量 若其放電區域之寬度,保持為大約3.5 mm,則使其重 複率增加至10,000 Hz之範圍,相較於當前運作於4,000 Hz 下之商用氣體放電雷射,將需要大幅增加其雷射氣體流 量。本說明書中將說明數種技術,來增加其必要之氣體流 量,藉以移除一些在彼等脈波間出自其放電區域之放電碎 屑。 下游之電弧作用 在一給定之氣體流動率有關的先存技藝式激態分子 放電室中,其脈波重複率係受限於其下游之電弧作用。下 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 20 (請先閲讀背面之注意事項再填寫本頁)573389 A7 _B7_ V. Description of the Invention (I7) The integrated main insulator is used to improve the flow path in the discharge area. The preferred embodiment of the present invention uses a main insulator with one or more pre-ionizers integrated in it. . This basically combines the pre-ionizer tube shown at 60 in Figure 4A with the earlier version of the main insulator shown at 50 in Figure 4A. A cross-sectional view of the main insulator of a preferred embodiment is shown in Figure 4C. The main insulator system is shown at 50A, and the slot system associated with a ground rod is shown at 60A. The position of the cathode is shown at 18A1. This insulation system is composed of high-density alumina, which was purchased from the company's LTD Ceramics in Newark, California and other suppliers. This design can greatly reduce the resistance of the gas flow, while allowing the flow speed to be increased significantly at the same blower power. Figure 4D shows a cathode-anode configuration that can show this modified flow path, compared to the configurations shown in Figures 4A and even Figures 13A (1) and 13A (2) . Increasing the gas flow rate If the width of the discharge area is maintained at about 3.5 mm, its repetition rate will be increased to the range of 10,000 Hz. Compared with the current commercial gas discharge lasers operating at 4,000 Hz, its lightning will need to be significantly increased. Eject gas flow. This manual will describe several techniques to increase the necessary gas flow to remove some of the discharge debris that comes out of their discharge area between their pulses. Downstream arcing In a preexisting state-of-the-art excimer discharge cell related to a given gas flow rate, the pulse repetition rate is limited by its downstream arcing. The following paper size applies to China National Standard (CNS) A4 (210X297 mm) 20 (Please read the precautions on the back before filling this page)

573389 A7 __B7_ 五、發明説明(I8 ) 游之電弧作用,係於其先前脈波之碎屑,恰在該等電極間 之電壓電位趨近其放電電壓時,而剛剛自其放電區域出來 時,方會發生。彼等電弧將會自其陰極,沿上述碎屑之後 緣所界定的路徑,延伸至其陽極。此下游之電弧作用,將 會產生一些能量低且品質極差之雷射脈波。因此,此下游 之電弧作用務必要加以避免,以及其係一使脈波率受到限 制之現象。 陽極處之吸力 第13A(3)圖中係顯示一特別針對改良其緊接陽極之區 域内的流動之較佳技術,其係恰如第13A(2)圖中所示之設 計,不同的是緊接其陽極542之下游,係設置有一吸力。在 此一實施例中,一槽溝通道544C在設置上,係沿其陽極542 在陽極542與絕緣體隔片544B間之長度,以及穿過其陽極 座棒546,而至其其圓柱形強迫通風間547。此強迫通風間 547,如第13D圖中所示,係連接至一在其放電室外部之管 路549。 第13E圖中所示之鼓風機550,將會自其強迫通風間 552抽出雷射氣體,以及使其在高於其放電室壓力大約1個 大氣壓力下,經由其水冷式熱交換器551,排放進此強迫通 風間547内。此強迫通風間552,係藉由在其放電室壁中鑽 出一平行於其電極之縱長方向的2.5 cm直徑之孔,而被建 立成。其中設有八個注入喷嘴553,可使出自其強迫通風間 552之高壓氣體,以一些較該部位處之一般氣體流速大甚多 之速度,注射進其風扇46 A下游處之氣體流内。因此,此 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 21 (請先閲讀背面之注意事項再填寫本頁)573389 A7 __B7_ V. Description of the Invention (I8) The arcing effect of the wave is caused by the debris of its previous pulse, just when the voltage potential between these electrodes approaches its discharge voltage, but just after it emerges from its discharge area, Will happen. Their arc will extend from their cathode to their anode along the path defined by the trailing edge of the debris. This downstream arc will generate some laser pulses with low energy and poor quality. Therefore, this downstream arcing must be avoided, and it is a phenomenon that limits the pulse rate. The suction at the anode Figure 13A (3) shows a better technique specifically for improving the flow in the area immediately next to the anode, which is exactly the design shown in Figure 13A (2). The difference is the tight A suction is provided downstream of the anode 542. In this embodiment, a slot communication channel 544C is arranged along the length of its anode 542 between the anode 542 and the insulator spacer 544B, and through its anode base rod 546, until its cylindrical force is communicated. Wind between 547. This forced ventilation room 547, as shown in Fig. 13D, is connected to a pipe 549 outside its discharge chamber. The blower 550 shown in FIG. 13E will extract laser gas from its forced ventilation chamber 552 and discharge it at a pressure of about 1 atmosphere higher than the pressure of its discharge chamber through its water-cooled heat exchanger 551. Enter this forced ventilation room 547. The forced ventilation chamber 552 was constructed by drilling a 2.5 cm diameter hole in the discharge chamber wall parallel to the longitudinal direction of the electrode. There are eight injection nozzles 553, which can inject the high-pressure gas from its forced ventilation chamber 552 into the gas stream downstream of its fan 46A at a rate much higher than the general gas velocity at that location. Therefore, this paper size applies to the Chinese National Standard (CNS) A4 (210X297 mm) 21 (Please read the precautions on the back before filling this page)

573389 A7 _B7_ 五、發明説明(l9 ) 額外之流動迴路,可提供額外之氣體冷卻作用。然而,其 主要之優點是,此額外之流動迴路,可提供層流,以及亦 可清理緊接其陽極下游之區域内的放電碎屑,以及其結果 可就一給定之一般氣體流動率,容許大幅增加其下游之無 電弧重複率。吸力亦可藉由在其陰極附近,建立一類似強 迫通風間552之強迫通風間,而設置在其陰極之下游。此強 迫通風間,可建立在一修飾版本之主絕緣體50内,或在一 建立於該等陰極541與絕緣體間之空腔内。其鼓風機550可 提供兩者強迫通風間所需之吸力。 第13D和13E圖中所示之設計,將會大幅增加其放電室 之設計的複雜性,而需要一額外之鼓風機,其較佳地將需 要具有一附有一類似該等用以驅動風扇46A之馬達的密封 式轉子之馬達。一可在其陽極處提供吸力之較簡單解決方 案,係顯示在第13F圖中。此一設計業已由吾等申請人測 試過,以及其可大幅改良其緊接陽極下游之區域内的氣體 流動。然而,其一般氣體流量會略為降低,因為有一部份 之風扇吸力555,係特製來提供其經由陽極座棒547之吸力。 本發明之較佳實施例,可提供一藉由雙馬達所驅動之 大切向風扇,而使雷射氣體循環。彼等顯示在第4A圖、第 13圖、第18圖、和第18A圖中所示之組件,可在該等電極 間,提供一67 m/sec之氣流,其係足以在4,000 Hz之脈波 間,清理其放電區域内大約1.7 cm之空間。在10,000 Hz下, 其清理之空間約為6.7 mm。此係大約為雷射平版印刷術當 前所利用之KrF和ArF雷射的典型3至3.5 mm之放電區域的 22 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 五、發明説明(2〇 ) 見度之兩倍。 这風扇之;戴面葉片結構,係顯示為第4 a圖中之 64A。其一透視圖係顯示在第18A圖中。其葉片結構係具有 一 5吋之直徑,以及係機製自一實心鋁合金6061-T6棒材。 每節丰又中之個別葉片,如第j 8 A圖中所示,係與相鄰節 段略有偏移,藉以極小化葉片在其放電區域内所造成之壓 力擾動。該等個別葉片,最好係具有一些變細成刀刃之前 緣,藉以降低運作期間離開其葉片前緣之放電聲波的反射 作用。 此如第18圖中所顯示之實施例,係利用兩個3_相無電 刷DC馬達,彼等各具有一裝在一金屬壓力罩蓋内之磁轉 子’後者可如美國專利編號第4,950,840號中所說明,使該 等馬達之定子部分,與其雷射氣體環境相隔離。在此一實 施例中,該壓力罩蓋係一0·016吋厚之薄壁鎳合金4〇〇,其 係作用為其雷射氣體之障壁。其兩馬達53〇和532,係驅動 同一軸桿,以及係被程式規劃在相反之方向中轉動。此兩 者馬達為無感測器之馬達(亦即,彼等在運作並無位置感測 器)。其用以控制右馬達530之右馬達控制器534,係作用為 一主控器,可經由一些類比和數位信號,來控制其從動馬 達控制器5 3 6 ’藉以建立開始/停止、電流指令、電流回授、 等等。其與雷射控制器24Α之通訊,係經由一 RS-232序列 埠,而進入其主控器534内。 較大型馬達 第18、18Α、18Β圖中所說明之切向風扇,係第2和2Α 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) -23 - 573389 A7 ____ B7_ 五、發明説明(2i ) 圖中所示之基本風扇技術,其係吾等申請人之雇主在丨991 年請准之專利(見美國專利編號第5,〇23,884號)。其他可用 以增加其放電區域内之雷射氣體速度的改良,係一些具有 美國專利編號第〇9/747,316號(其係藉由參照而合併進此說 明書中)中所說明之類型的較大而更強有力之馬達的風 扇。該馬達之額定值為4.5 kw,以致兩個此類馬達,相較 於上文所說明之兩個2 kw之馬達,可提供大約9 kw之驅動 功率,給上述之5吋風扇。此等較大型風扇,可使其放電區 域内之氣體速度’增加至大約90 m/s。 較佳之陶瓷質軸承 較快之風扇速率,會加諸額外之應力給彼等軸承。深 槽溝氮化矽滾珠軸承,業已證明可執行十分良好,以及可 於在一些含氟氣之激態分子雷射放電室内支撐彼等鼓風機 風扇之際,展現出合理之壽命。此軸承之構造,係需要一 些氮化矽滾珠和槽板加上一扣接定位圈,其典型地係以 PTFE(商品名Teflon(鐵氟龍))製成,而可在運作期間,使滾 珠彼此相隔離。 此軸承之故障模式,為其定位圈之磨耗。所以,任何 可極小化定位圈磨耗之改良,將可促成一耐永之軸承。有 一種改良可藉由使該定位圈之材料改變成另一氟氣相容性 而有較佳之機械(包括抗磨損性)和熱性質之撓曲性材料, 來加以實現。在此一方式中,該定位圈之幾何外形係被保 留。一合適之材料為PCTFE(商品名Kel_F,其係在溫度35F 下軟化而較PTFE為高)。測試顯示相較於Tefl〇n,Kel_F之 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 24 (請先閲讀背面之注意事項再填寫本頁) -訂|573389 A7 _B7_ V. Description of the Invention (l9) The additional flow circuit can provide additional gas cooling effect. However, its main advantages are that this additional flow circuit can provide laminar flow, and can also clean discharge debris in the area immediately downstream of its anode, and the result can allow for a given general gas flow rate, allowing Significantly increase its arc-free repetition rate downstream. Suction can also be placed downstream of its cathode by creating a forced-air chamber similar to the forced-air chamber 552 near its cathode. The forced ventilation chamber may be built in a modified version of the main insulator 50 or in a cavity built between the cathodes 541 and the insulator. Its blower 550 can provide the suction required for both forced ventilation rooms. The designs shown in Figures 13D and 13E will greatly increase the complexity of the design of the discharge chamber, and require an additional blower, which will preferably need to have a device similar to those used to drive the fan 46A. Motor of the sealed rotor of the motor. A simpler solution that provides suction at its anode is shown in Figure 13F. This design has been tested by our applicants and it can significantly improve the gas flow in the area immediately downstream of the anode. However, its general gas flow will be slightly reduced because a part of the fan suction 555 is specially made to provide its suction through the anode base rod 547. A preferred embodiment of the present invention can provide a large tangential fan driven by a dual motor to circulate the laser gas. The components shown in Figure 4A, Figure 13, Figure 18, and Figure 18A provide a 67 m / sec airflow between these electrodes, which is sufficient for pulses of 4,000 Hz. Between waves, clear about 1.7 cm of space in the discharge area. At 10,000 Hz, the cleared space is approximately 6.7 mm. This is approximately 22 of the typical 3 to 3.5 mm discharge area of KrF and ArF lasers currently used by laser lithography (please read the precautions on the back before filling this page) This paper size applies to Chinese national standards ( CNS) A4 specification (210X297 mm) 5. Description of the invention (20) Double the visibility. This fan; the surface of the blade structure is shown as 64A in Figure 4a. A perspective view is shown in Figure 18A. The blade structure has a diameter of 5 inches, and the mechanism is made of a solid aluminum alloy 6061-T6 bar. The individual blades in each section, as shown in Figure 8A, are slightly offset from adjacent sections, thereby minimizing the pressure disturbance caused by the blades in their discharge area. The individual blades preferably have some leading edges that are tapered to the cutting edge to reduce the reflection of the discharge sound waves that leave the leading edge of the blade during operation. This embodiment, as shown in FIG. 18, uses two 3-phase brushless DC motors, each of which has a magnetic rotor housed in a metal pressure cover. The latter can be used as in US Patent No. 4,950,840. As described in the above, the stator part of these motors is isolated from its laser gas environment. In this embodiment, the pressure cover is a 0.0016-inch thin-walled nickel alloy 400, which acts as a barrier for its laser gas. Its two motors, 53 and 532, drive the same shaft and are programmed to rotate in opposite directions. These two motors are sensorless motors (i.e., they have no position sensor in operation). It is used to control the right motor controller 534 of the right motor 530. It acts as a master controller and can control its slave motor controller 5 3 6 'through some analog and digital signals to establish start / stop and current commands. , Current feedback, etc. It communicates with the laser controller 24A through an RS-232 serial port and enters its main controller 534. Larger motors The tangential fans illustrated in Figures 18, 18A, and 18B are 2 and 2A. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -23-573389 A7 ____ B7_ V. Invention Note (2i) The basic fan technology shown in the figure is a patent approved by our applicant's employer in 991 (see US Patent No. 5,023,884). Other improvements that can be used to increase the velocity of the laser gas in its discharge area are larger ones of the type described in U.S. Patent No. 09 / 747,316 (which is incorporated herein by reference). A fan of a more powerful motor. The rated value of this motor is 4.5 kw, so that two such motors, compared to the two 2 kw motors described above, can provide a driving power of about 9 kw to the above 5-inch fan. These larger fans can increase the gas velocity 'in the discharge area to about 90 m / s. Better ceramic bearings Faster fan speeds will put extra stress on their bearings. Deep grooved silicon nitride ball bearings have proven to perform very well, and can support reasonable blowers and fans when supporting some blower fans in fluorine-containing excimer laser discharge chambers. The structure of this bearing requires some silicon nitride balls and groove plates plus a snap ring, which is typically made of PTFE (trade name Teflon) and can be used during operation. Isolated from each other. The failure mode of this bearing is the wear of its positioning ring. Therefore, any improvement that can minimize the wear of the positioning ring will promote a durable bearing. An improvement can be achieved by changing the material of the collar to another fluorine gas compatible material with better mechanical (including abrasion resistance) and thermal properties. In this way, the geometry of the positioning ring is preserved. A suitable material is PCTFE (trade name Kel_F, which softens at a temperature of 35F and is higher than PTFE). The test shows that compared with TeflOn, Kel_F's paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 24 (Please read the precautions on the back before filling this page)-Order |

573389 A7 _ B7_ 五、發明説明(22 ) 腐蝕,已被大幅降低。 上述定位圈材料之另一合理選擇,將為氮化矽,因為 其用作滾珠和槽板時,可執行十分良好。然而,此將需要 其幾何外形有所改變,因為氮化矽並不具撓曲性,以及將 無法如同PCTFE—樣做扣接。第18B圖係顯示此如何可藉 由建造一兩件定位圈540A和540B,以及以一鎖定銷542A 使此兩件鎖定在一起,來加以完成。此鎖定銷可以一類似 PTFE或PCTFE等撓曲性材料來製成。彼等陶瓷滾珠係顯示 在541處。一他型組態,為在一無定位圈槽板中交錯排列成 之石夕滾珠轴承和較小之隔離滾珠。此等隔離滚珠亦為氮化 矽。彼等可作用為隔片而不含負載,以及會與軸承滾珠在 相反之方向中轉動。 另一有潛力之軸承材料,為氧化鍅或一塗以類似公司 在新罕布夏州Keen市之Timkin分公司,Mineature precision Bearing,所供應之塗料(DLC)等金鋼石的不銹鋼。該等槽 板和滾珠兩者,均係塗以DLC。其襯層亦可為氧化鍅。彼 等測試顯示,在一 F 2大氣中,此軸承將展現極低之摩擦力; 所以,此等軸承之運作不使用潤滑劑,將是可行的。 磁性軸承 彼等較佳實施例中,可設置一些磁性軸承,以避免軸 承會限制到其放電室之有效壽命,及/或容許有較高速率 之運作。彼等磁性軸承系統之描述,係說明在美國專利編 號第6,104,735號内,其係藉由參照而合併進此說明書中。 在另一之較佳實施例中,該等風扇和主熱交換器裝 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 25 (請先閲讀背面之注意事項再填寫本頁) •訂· :線· 573389 A7 _B7_ 五、發明説明(23 ) 置,已自其放電室移出,以及其氣體循環,係藉由高壓注 入大約10至20%之循環氣體流來加以提供。此一組態係描 繪在第25圖中。第25圖係顯示其由兩基本上包括70 cm長之 圓筒所形成的放電室之橫截面。其外部圓筒之直徑約為30 cm,以及其内部圓筒之直徑約為20 cm。該等電極係如所 示位於604處,彼等傳統上係具有大約1.7 cm之間距,和大 約50 cm之長度。其内部圓筒602,可經由噴嘴型狹縫606, 提供一大約10至20%之氣體流量所需的排氣強迫通風間。 此10至20%之氣流,係自其圓筒602之一或兩端離開,而至 其氣體泵608,在此,其會被抽吸經過其水冷式熱交換器 610,而至其入口強迫通風間612,其係由一亦大約為70 cm 長之第三圓筒和一被焊接至其外部圓筒600之板所形成。氣 體係進入其強迫通風間612之一或兩端,以及係經由一狹缝 型噴嘴614,注入進其循環氣體流動路徑中。其兩圓筒間之 氣體壓力,係在一大約3大氣壓之平均壓力下,其氣體泵 608,最好為一離心鼓風機,而使其尺寸能建立足夠之壓力 差,以確保該等電極間,有適當之流動速度,以便達成所 希望範圍在6,000 Hz至10,000 Hz或以上之放電重複率。其 流動迴路所有遭逢雷射氣體之部分,最好是以一些氟氣相 容性材料來構成。在彼等較佳之實施例中,其鼓風機608 所需之驅動器,係一具有一密封式轉子之無電刷DC馬達, 其係與上文所說明及顯示在第18圖中用以驅動切向風扇之 馬達530和532相類似。 單程雷射氣體流 26 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 五、發明說明(24 ) 另一在電極間提供較高流動速度之技術,是提供單程 雷射氣體流。在此等實施例中,其鼓風機亦係與其雷射放 電室相相隔,但所有經過電極之氣流,係自其放電室62〇 導出,而至其鼓風機單元622。此類系統係顯示在第26圖 中其熱父換器可為一獨立之單元,或者其可被裝進其放 電室内,或如同在其他之實施例中,與其鼓風機單元一起 裝進同一容器内,其鼓風機所需之馬達驅動器,如上文所 述,最好係包括一密封式轉子。其鼓風機亦可為一類似美 國專利編號第5,471,965號(藉由參照而合併進此說明書中) 中所說明之水輪機驅動式鼓風機。在此一情況中,可使用 磁感耦合,使水輪機驅動器,與其含氟之雷射氣體相隔離。 此驅動器將要求一電動高壓水力流體泵。其鼓風機單元和 熱交換器,可連同其放電室,一起裝進一雷射封殼内,或 者彼等可被裝進一獨立之封殼内,或者甚至在製造廠内之 一獨立房間内。就此一實施例而言,其係設置有一些適當 之導管和/或葉片,藉以使其雷射氣體流,能沿該等電極 541A與541B間之20 mm X 50 mm空間的長度,做近乎等分 之分配。其鼓風機622和熱交換器,加上上述之導管和葉 片,在設計上係使用一些知名之技術,藉以提供一高至大 約90至100 m/s之氣體流量,使通過該等電極“丨八與“⑶ 間之放電區域。其流動路徑之所有部分,在構成上亦必須 使用氟氣相容性材料。其鼓風機622所需之驅動器,可為一 電動馬達,或者其可為-類似美國專利編號第5,471,965號 中之驅動器等的水輪機。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) 27573389 A7 _ B7_ V. Description of the invention (22) Corrosion has been greatly reduced. Another reasonable choice for the material of the above-mentioned positioning ring will be silicon nitride, because it can perform very well when used as a ball and groove plate. However, this will require a change in its geometry, as silicon nitride is not flexible and will not be snapped in like PCTFE. Figure 18B shows how this can be accomplished by constructing one or two pieces of positioning rings 540A and 540B, and locking the two pieces together with a locking pin 542A. The locking pin can be made of a flexible material like PTFE or PCTFE. Their ceramic balls are shown at 541. The other configuration is the Shixi ball bearings and smaller isolated balls arranged staggered in a grooveless plate. These isolation balls are also silicon nitride. They can act as spacers without load, and they can rotate in opposite directions to the bearing balls. Another potential bearing material is samarium oxide or stainless steel coated with diamonds, such as coatings (DLC) supplied by Timkin Branch, Mineral Precision Bearing, of similar companies in Keen, New Hampshire. Both the groove plate and the ball are DLC-coated. Its liner can also be hafnium oxide. Their tests show that this bearing will exhibit extremely low friction in an F 2 atmosphere; therefore, the operation of these bearings without lubricants will be feasible. Magnetic bearings In their preferred embodiments, some magnetic bearings may be provided to avoid that the bearings will limit the useful life of their discharge cells and / or allow higher speed operation. Descriptions of their magnetic bearing systems are described in U.S. Patent No. 6,104,735, which is incorporated herein by reference. In another preferred embodiment, the paper size of the fans and the main heat exchanger is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 25 (Please read the precautions on the back before filling this page) • Order ·: Line · 573389 A7 _B7_ V. Description of the Invention (23), which has been removed from its discharge chamber, and its gas circulation, is provided by high-pressure injection of a circulating gas flow of about 10 to 20%. This configuration is depicted in Figure 25. Figure 25 shows a cross-section of a discharge cell formed by two cylinders which essentially consist of 70 cm long cylinders. Its outer cylinder has a diameter of about 30 cm, and its inner cylinder has a diameter of about 20 cm. These electrode systems are located at 604 as shown, and they have traditionally had a pitch of about 1.7 cm and a length of about 50 cm. The inner cylinder 602 can pass through a nozzle-type slit 606 to provide an exhaust forced ventilation room required for a gas flow of about 10 to 20%. This 10 to 20% air flow exits from one or both ends of its cylinder 602 to its gas pump 608, where it is pumped through its water-cooled heat exchanger 610 and forced to its inlet The ventilating chamber 612 is formed by a third cylinder, also approximately 70 cm long, and a plate welded to its outer cylinder 600. The gas system enters one or both ends of its forced ventilation chamber 612, and is injected into its circulating gas flow path through a slit-type nozzle 614. The gas pressure between its two cylinders is at an average pressure of about 3 atmospheres, and its gas pump 608, preferably a centrifugal blower, so that its size can establish a sufficient pressure difference to ensure that between these electrodes, Have a proper flow rate to achieve the desired discharge repetition rate in the range of 6,000 Hz to 10,000 Hz or more. All parts of the flow circuit that are exposed to laser gas are preferably made of some fluorine gas-phase capacitive materials. In their preferred embodiment, the drive required for their blower 608 is a brushless DC motor with a sealed rotor, which is similar to that described above and shown in Figure 18 to drive a tangential fan The motors 530 and 532 are similar. One-way laser gas flow 26 (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 573389 A7 V. Description of the invention (24) Another between the electrodes The technology that provides higher flow speeds is to provide a one-way laser gas flow. In these embodiments, the blower is also separated from its laser discharge chamber, but all the airflow passing through the electrode is led from its discharge chamber 62o to its blower unit 622. This type of system is shown in Fig. 26. The heat exchanger can be a separate unit, or it can be installed in its discharge chamber, or in the same container as its blower unit in other embodiments. As mentioned above, the motor driver required for its blower preferably includes a sealed rotor. The blower may also be a turbine-driven blower similar to that described in U.S. Patent No. 5,471,965 (incorporated by reference herein). In this case, a magnetic coupling can be used to isolate the turbine drive from its fluorine-containing laser gas. This drive will require an electric high-pressure hydraulic fluid pump. Its blower unit and heat exchanger, together with its discharge chamber, can be housed in a laser enclosure, or they can be housed in a separate enclosure, or even in a separate room within the manufacturing plant. For this embodiment, it is provided with some appropriate ducts and / or blades, so that the laser gas flow can follow the length of the 20 mm X 50 mm space between the electrodes 541A and 541B, etc. Allotment. Its blower 622 and heat exchanger, plus the above-mentioned ducts and blades, are designed using some well-known technologies to provide a gas flow rate of up to about 90 to 100 m / s, so that these electrodes pass And "⑶ discharge area. All parts of its flow path must also be made of fluorine-compatible materials. The drive required for its blower 622 may be an electric motor, or it may be a water turbine such as the drive described in U.S. Patent No. 5,471,965. This paper size applies to China National Standard (CNS) A4 (210X297)

---------------------#—— .- · - ♦ - (請先閲讀背面之注意事項再填寫本頁) -訂-------------------------- # —— .- ·-♦-(Please read the notes on the back before filling this page) -Order -----

573389 A7573389 A7

五、發明説明(25 ) 6.000 Hz至1〇,〇〇〇 Hz有關之脈波功率 快速響應之要求 彼等依據本發明之雷射系統的運作,將要求精確控制 其在6,000 Hz至1〇,〇〇〇 Hz(亦即,以短至大約ι〇〇微秒之時 間間隔)之範圍内的重複率下施加至該等電極間大約 12.000 V至30,000 V之範圍内的電位。誠如發明之背景一 郎所指示,在先存技藝脈波電力系統中,其一充電電容器 排組,係使充電至一精確預定之控制電壓,以及其放電係 藉由閉合一固態開關,而使上述充電電容器上面所儲存之 能量,環行經過一壓縮-放大電路,藉以產生其所希望橫跨 該等電極之電位。該開關之閉合至其放電之完成間的時 間,僅有數微秒(亦即,大約5微秒),但C〇在先存技藝式系 統中之充電,係要求一較1 〇〇微秒長甚多之時間間隔。其係 有可月b猎由使用一較大之電源供應器或數個並聯之電源供 應器,來降低其充電時間。舉例而言,吾等申請人使用多 重並聯之先存技藝式電源供應器,係可在1〇,〇〇〇 HZ下運 作。增加其電源供應器上面之電壓,亦可縮短其充電時間。 在此一較佳之實施例中,如同第5圖中所示,就其固 態開關下游之脈波電力系統部份而言,吾等申請人係利用 與第3圖中所顯示之先存技藝相同的基本設計,但吾等申請 人就充電C〇,則係利用一截然不同之技術。 共振充電 吾等申請人係利用兩種類型之共振充電系統,以供c〇 極快速充電。此等系統係藉由參照第6A和6B圖來加以說 28 (請先閲讀背面之注意事項再填寫本頁) .、盯| :線_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 B7 五、發明説明(26 明。 第一共振充電器 (請先閲讀背面之注意事項再填寫本頁) -訂— :線丨 一可顯示此較佳實施例之電路,係顯示在第6A圖中。 在此一情況中,所使用係一具有4〇〇或460 VDC/90安培輸 入和1200 VDC安培輸出之標準式DC電源供應器200。此電 源供應器’係一自大約600伏至1200伏之可調節式DC電源 供應器。此電源供應器,係直接裝接至C_ 1,可消除電壓回 授至此電源供應器之需要。當此電源供應器被致能時,其 將會被啟通’以及在其C-1電容器上面,調節出一固定電 壓。此系統之性能,多少係獨立於其C-1上面之電壓調節 率’因而在此電源供應器中,僅需要最基本之控制迴路。 其认’此電源供應器’可於C-1上面之電壓,一旦下降低於 其電壓设定值時’將能量加進此系統内。此將可容許該電 源供應器,在雷射脈波起始間之整個時間中(以及在雷射脈 波期間中),補充自Cd轉移至c〇之能量。此相較於其先存 技藝式脈波系統,可進一步降低其電源供應器之峰值電流 的要求。將需要一具有最基本之控制迴路的電源供應器, 及極小化此電源供應器之峰值電流額定值,與其系統之平 均功率要求相結合,將可使其電源供應器之成本,降低至 一 50%之估計值。此外,此較佳之設計,可提供廠商額外 之靈活性’因為固定電流、固定輸出電壓之電源供應器, 可輕易購自多方之來源。此等電源供應器,可購自一些類 似 Elgar、UniversalVoltronics、Kaiser、和 EMI等供應商。 控制面板 本紙張尺度適财關家標準(咖〉峨格χ297公 573389 A7 _B7_ 五、發明説明(27 ) 其電源供應器,會連續不斷地使一 1033 //F電容器 202,充電至控制面板此控制面板204所命令之電壓位準。 此控制面板204,亦可命令其IGBT控制面板開關206閉合及 斷開,藉以使能量自電容器202轉移至電容器42。其控制面 板電感器208,可協同該等電容器202和42,建立起其轉移 時間常數,控制面板以及可限制其峰值充電感器之電感 值,係已(自4,000 Hz上面所使控制面板用之140微亨)降至 48微亨,以達成其C0電容器42之極快速(小控制面板於100 // s)充電。此控制面板204,可接收一正比於其電容器42 上控制面板面之電壓的電壓回授信號212,和一正比於流經 其電感器208之電流控制面板的電流回授信號214。由此兩 回授信號,此控制面板204,可即時地控制面板計算出一旦 其IGBT開關206在該時刻為斷開狀,其電容器202上面控制 面板之電壓。所以,使一命令電壓210,饋送進此控制面板 204,將可精控制面板確計算出其電容器42和電感器208中 所儲存之能量,使與所需要之控制面板充電命令電壓210 做比較。此控制面板204,可由此一計算決定出其控制面板 充電周期中斷開其IGBT開關206之正確時間。 系統準確度 在其IGBT開關206斷開後,其電感器208之磁場内所儲 存之能控制面板量,將會經由其慣動(free-wheeling)二極體 路徑215,轉移至其電容控制面板器42。此即時能量計算之 準確度,決定了其電容器42之最終電壓上控制面板面將會 存在之閃動抖顫調譜的量。由於此系統極高之充電速率所 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 30 (請先閲讀背面之注意事項再填寫本頁) …裝丨V. Description of the invention (25) Requirements for fast response of pulse wave power from 6.000 Hz to 10,000 Hz. The operation of the laser system according to the present invention will require precise control between 6,000 Hz and 10, A potential in the range of approximately 12.000 V to 30,000 V is applied to the electrodes at a repetition rate in the range of 1000 Hz (that is, at time intervals as short as about ΙΟΟμsec). As instructed by Ichiro in the background of the invention, in the pre-existing technology pulse wave power system, a charging capacitor bank is used to charge to a precisely predetermined control voltage, and its discharge is caused by closing a solid-state switch. The energy stored on the above-mentioned charging capacitor is circulated through a compression-amplification circuit to generate the potential that it desires across the electrodes. The time between the closing of the switch and the completion of its discharge is only a few microseconds (that is, about 5 microseconds), but the charge of C0 in the prior art system requires a length longer than 100 microseconds. Many time intervals. It is possible to reduce the charging time by using a larger power supply or several parallel power supplies. For example, our applicant uses a multi-parallel pre-existing technology power supply, which can operate at 100,000 HZ. Increasing the voltage on its power supply can also shorten its charging time. In this preferred embodiment, as shown in FIG. 5, as far as the pulse power system part of the solid-state switch is concerned, our applicant uses the same pre-existing technology as shown in FIG. Basic design, but our applicant charges C0, using a completely different technology. Resonant Charging Our applicants utilize two types of resonant charging systems for extremely fast charging. These systems are described by referring to Figures 6A and 6B. 28 (Please read the notes on the back before filling out this page.). Mark |: Line _ This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 (Mm) 573389 A7 B7 V. Description of the invention (26). The first resonance charger (please read the precautions on the back before filling out this page)-order-: line 丨 a circuit that can show this preferred embodiment, is Shown in Figure 6A. In this case, a standard DC power supply 200 with a 400 or 460 VDC / 90 amp input and 1200 VDC amp output is used. This power supply is a Adjustable DC power supply of about 600 volts to 1200 volts. This power supply is directly connected to C_1, which eliminates the need for voltage feedback to this power supply. When this power supply is enabled, It will be turned on 'and a fixed voltage is adjusted on its C-1 capacitor. The performance of this system is somewhat independent of the voltage regulation rate on its C-1'. Therefore, in this power supply, only The most basic control loop is required. The power supply 'can add the energy to this system at the voltage above C-1, once it drops below its voltage setting value. This will allow the power supply to be fully charged between the start of the laser pulse. During the time (and during the laser pulse period), the energy transferred from Cd to c0 is supplemented. This can further reduce the peak current requirements of its power supply compared to its pre-existing art pulse system. The need for a power supply with the most basic control loop, and minimizing the peak current rating of this power supply, combined with the average power requirements of its system, will reduce the cost of its power supply to a 50 % Estimated value. In addition, this better design can provide manufacturers with additional flexibility 'because fixed current, fixed output voltage power supplies can be easily purchased from multiple sources. These power supplies can be purchased from some Similar to suppliers such as Elgar, UniversalVoltronics, Kaiser, and EMI, etc. Control panel This paper size is suitable for financial and family care standards (Ca> Ege χ297 Male 573389 A7 _B7_ V. Description of the invention (27) The power supply will continuously charge a 1033 // F capacitor 202 to the voltage level commanded by the control panel 204. The control panel 204 can also command its IGBT control panel switch 206 to be turned on and off. In order to transfer energy from capacitor 202 to capacitor 42. Its control panel inductor 208 can cooperate with these capacitors 202 and 42 to establish its transfer time constant, the control panel and the inductance value that can limit its peak charging sensor. It has been reduced from 140 microhenry for the control panel used above 4,000 Hz to 48 microhenry to achieve the extremely fast charging of its C0 capacitor 42 (small control panel at 100 // s). The control panel 204 can receive a voltage feedback signal 212 that is proportional to the voltage on the control panel surface of its capacitor 42, and a current feedback signal 214 that is proportional to the current control panel flowing through its inductor 208. Based on the two feedback signals, the control panel 204 can calculate the voltage of the control panel on its capacitor 202 once the IGBT switch 206 is turned off at this moment. Therefore, a command voltage 210 is fed into the control panel 204, and the controllable control panel can accurately calculate the energy stored in its capacitor 42 and inductor 208, and compare it with the required control panel charging command voltage 210. This control panel 204 can determine a correct time for turning off its IGBT switch 206 during the charging cycle of its control panel by a calculation. System accuracy After the IGBT switch 206 is turned off, the amount of control panel stored in the magnetic field of its inductor 208 will be transferred to its capacitance control panel via its free-wheeling diode path 215器 42。 42. The accuracy of this instant energy calculation determines the amount of flicker jitter modulation spectrum that will exist on the control panel surface of the final voltage of its capacitor 42. Due to the extremely high charging rate of this system, the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) 30 (Please read the precautions on the back before filling this page)… installation 丨

573389 A7 _B7_ 五、發明説明(28 ) 致,控制面板可能會存在過多之抖顫調諧,使符合一所希 望± 0.05%之系統調節率控制面板的需要。若然,可利用一 額外之電子電路,舉例而言,諸如如下文所控制面板討論 之去Q電路、或分電降壓電路。 第二共振充電器 一第二共振充電器,係顯示在第6B圖中。此電路係與 第6A圖中所顯示者相類似。其主要之電路元件是: II-一具有固定之DC電流輸出的三相電源供應器300 ; C-1-一電源電容器302,其數量級係相當於或大於其原 有之C0電容器42者;573389 A7 _B7_ V. Description of the Invention (28) The control panel may have too many trembling tunings, which meets the needs of a system regulation rate control panel that expects ± 0.05%. If so, an additional electronic circuit can be utilized, such as a Q-removing circuit, or a power-distribution step-down circuit, as discussed in the control panel below. Second resonant charger A second resonant charger is shown in Figure 6B. This circuit is similar to that shown in Figure 6A. Its main circuit components are: II-a three-phase power supply 300 with a fixed DC current output; C-1-a power capacitor 302, whose order of magnitude is equal to or greater than its original C0 capacitor 42;

Ql、Q2、和Q3-—些開關,可控制充電有關之電流流 量,以及可維持一在C0上面之調節電壓; D1、D2、和D3-可使電流做單一方向流動; R1、和R2-可使電壓回授至其控制電子電路; R3-可在一小的過量充電之事件中,容許C0上面之電 壓迅速放電; L1-一在C-1電容器302與C0電容器排組42間之共振電 感器,可限定電流之流量,以及建立充電轉移之 時序; 控制面板304-基於一些電路回授參數,來命令Q1、 Q2、和Q3斷開和閉合。 其運作之一範例如下: 第6B圖之電路與第6A圖者的差異,是加入了開關Q2 和二極體D3,名為一去Q開關。此開關可藉由在其共振充 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 31 (請先閲讀背面之注意事項再填寫本頁) 訂丨 丨!線丨 573389 A7 ---- ------B7 五、發( 29 ) —^ ^ (請先閲讀背面之注意事項再填寫本頁) 電期間,容許其控制單元短路掉其電感器,而改良此電路 之調節率。此“去Q”用,可防止其充電電感器之電流内所 儲存的額外能量被轉移至其電容器C〇。 在需要一雷射脈波之前,其C-1上面之電壓,係使充 電至600-800伏特,以及彼等開關Q1_Q3係斷開。於受到來 自其雷射之指令,Q1將會閉合。此刻,電流將會自C-1經 由充電電感器L1而至C〇。誠如前節之討論,控制面板上面 之一计算器’將會評估其C〇上面之電壓,和其l 1中所流動 相對於一來自雷射之指令電壓設定點的電流。當其上面 之電壓加上其電感器L1中所儲存等之效能量,等於其所希 望之指令電壓時,Q1便會成開路。其計算式為:Ql, Q2, and Q3- switches that can control the current flow related to charging and can maintain a regulated voltage above C0; D1, D2, and D3- can make the current flow in one direction; R1, and R2- The voltage can be fed back to its control electronic circuit; R3- can allow the voltage on C0 to be discharged quickly in the event of a small overcharge; L1- a resonance between C-1 capacitor 302 and C0 capacitor bank 42 The inductor can limit the flow of current and the timing of establishing charge transfer. Control panel 304- based on some circuit feedback parameters to command Q1, Q2, and Q3 to open and close. An example of its operation is as follows: The difference between the circuit in Figure 6B and that in Figure 6A is the addition of a switch Q2 and a diode D3, which is named a Q switch. This switch can be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) at its resonant charging paper size 31 (Please read the precautions on the back before filling this page) Order 丨 丨! Line 丨 573389 A7 ---- ------ B7 V. Send (29) — ^ ^ (Please read the precautions on the back before filling this page) During the power, allow its control unit to short its inductor, And improve the regulation of this circuit. This "de-Q" function prevents the extra energy stored in the current of its charging inductor from being transferred to its capacitor C0. Before a laser pulse is needed, the voltage on its C-1 is charged to 600-800 volts and their switches Q1_Q3 are turned off. Upon command from its laser, Q1 will close. At this moment, the current will flow from C-1 to C0 via the charging inductor L1. As discussed in the previous section, one of the calculators on the control panel will evaluate the voltage on its C0 and the current flowing in its l1 relative to a command voltage set point from the laser. When the voltage above it plus the effective amount stored in its inductor L1 is equal to its desired command voltage, Q1 will be open. Its calculation formula is:

Vf= [Vc〇s2H(U · Ilis2)/C〇)]0*5 其中,Vf = [Vc〇s2H (U · Ilis2) / C〇)] 0 * 5 where,

Vf=在Q1斷開及中之電流變為零之後C〇上面的電壓; Vc〇s=C〇上面於Q1斷開時之電壓;Vf = voltage above C0 after Q1 turns off and the current in it becomes zero.

Ilis=當Q1斷開時流經“之電流。 在Q1斷開之後,L1中所儲存之能量,將會開始經由〇2 傳遞至該等CG,直至該等C〇上面之電壓,大致等於上述之 指令電壓為止。此刻,Q2將會閉合,以及電流將會停止流 至C〇,而將會被導引經過D3。除此“去Q”電路外,其出自 一分電降壓電路之Q3和R3,可容許對C〇上面之電壓,做另 外之細密調節。 其分電降壓電路216之開關Q3,將會在其流經電感器 L1之電流停止時,受到其控制面板之指令而閉合,以及其 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) _ 32 - 573389 A7 1 ----------— 五、發明説明(30 ) —---*--Ilis = The current that flows through when Q1 is turned off. After Q1 is turned off, the energy stored in L1 will begin to be transferred to the CGs through 〇2, until the voltage above the C0 is approximately equal to the above The command voltage is reached. At this moment, Q2 will be closed, and the current will stop flowing to C0, and will be led through D3. In addition to this "go to Q" circuit, it comes from Q3 and R3 can allow other fine adjustments to the voltage above C0. The switch Q3 of its power-dissipation step-down circuit 216 will be closed by the instruction of its control panel when the current flowing through the inductor L1 stops. , And its paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) _ 32-573389 A7 1 ------------ V. Description of invention (30) -

Co上面之電壓’將會被分電而降壓至其所希望之控制電 壓,接著其開關Q3便會斷開。其電容器c〇和電阻㈣之時 間常數,應使充分快速,以便在無可察覺量之總充電周期 下,使其電容器Co分電降壓至該指令電壓。 結果,其共振充電器’可被配置成三階層之調節控 制。其略嫌粗略之調節,係由其能量計算器和其開關似 t電周期中之斷開來提供。當其上面之電壓,接近其目 钛值時,上述之去q開關將會閉合,而於其C〇上面之電壓 處於或略高於其目標值時,停止其共振充電。在一較佳實 施例中’其開關Q 1和去q開關係被用來提供準確度 +/-〇· 1 /〇之调節作用。若需要額外之調節,則可利用第三種 對電壓調節之控制。此即其開關⑴和叫顯示在在犯圖中 之216處)之分電降壓電路,可使q放電至其精確之目標值。 C〇下游之改良 誠如上文所述,本發明之脈波電力系統的較佳實施 例,如第5A圖所示,係利用與第3圖中所說明之先存技藝 式系統中所用相同之基本設計。然而,此基本設計中,是 需要做某些重要之改良,以因應其大幅增加之重複率所致 熱負載大約有因數6之增加。此等改良係說明在下文中。 整流器和壓縮頭之詳細說明 整流器40和壓縮頭60之主要組件,係顯示在第3圖 中,以及係有關此系統之運作而討論於發明之背景一節 中。在此卽中’吾荨將說明此等整流器和壓縮頭之製造細 節0 33 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 B7 五、發明説明(31 ) 固態開關 固態開關46,係一公司設在賓州Youngwood之Powerex 所供應之P/N CM 800 HA-34H IGBT開關。在一較佳之實施 例中,係並聯使用兩個此類開關。 電感器 電感器48、54、和64,係一些類似於美國專利編號第 5,448,580和5,315,611號中所說明之先存技藝式系統的可 飽和式電感器。第7圖係顯示一較佳設計之L〇電感器48。在 此電感器中,有四條來自兩個IGBT開關46B之導體,其係 穿過十六個陶鐵磁體環49,而形成一 8吋長導磁係數極高之 材料的空心圓柱體之零件48A,而使其内徑大約為1吋,以 及其外徑大約為1.5吋。每一四個導體,接著係使繞一絕緣 圓環形心芯兩圈’以形成其零件48B。此四個導體’接著 使連接至一板,其復使連接至其Ci電容器排組52之高電壓 側。 其可飽和式電感器54之一較佳草圖,係顯示在第8圖 中。在此一情況中,其電感器係一單匝幾何形狀,在此’ 其組體均處於高電壓下之頂蓋和底蓋541和542與中心心軸 543,係形成一穿過其五個電感器磁芯之單阻。其外殼545 係處於接地電位。其五個磁芯係由賓州Butler市之 Magnetics 或加州 Adelanto市之National Arnold所供應之一 0.0005’,厚高導磁係數膠帶纏繞的50-50% Ni-Fe合金所構 成。其電感器外殼上面之散熱片’將有助於使其内部耗 散之熱量傳導而做強迫通風冷卻。此外’有一陶瓷碟形片 本紙張尺度適用中國國家標準(°^) A4規格(210X297公釐) 34 (請先閲讀背面之注意事項再填寫本頁) .、可| 丨!線丨 573389 A7 __—__B7_ 五、發明説明(32 ) (未不出)’被安裝在其電抗器底蓋之下,以協助熱量使自 此組體之中央區段,傳導至其模組框架底板。第8圖亦顯示 出’其高電壓係連接至其C1電容器排組52之一電容器,以 及至其1:25升壓脈波變壓器56之一電感單元上面的一條高 電壓引線。其外殼545係連接至上述單元56之接地引線。 其可飽和式電感器64之頂視圖和斷面圖,係分別顯示 在第9A和9B圖中。在此一實施例之電感器中,如第9B圖中 所示係附加有一些磁通量拒斥金屬塊3〇1、302、303、和 304 ’藉以降低其電感器内之漏磁通。此等磁通量拒斥金屬 塊’可大幅縮小其磁通量可穿透之面積,以及因而有助於 極小化其電感器之飽和電感。電流係環繞其磁芯3〇7,行經 此電感器組體中之垂直導體棒,而成為五條迴路。其電流 係自305處進入,而如第9A圖中所示,沿其標示”1”之中央 内的一條大直徑之導體下行,以及沿其亦標示”丨,,之外圍上 面的六條較小導體上行。此電流接著會向下流進其内側上 面標示2之兩條導體内,接著向上流進其外側上面標示2之 六條導體内’接著向下游進其内側上面之磁通量拒斥金屬 塊’接著向上流進其外側上面標示3之六條導體内,接著向 下流進其内側上面標示3之兩條導體内,接著向上流進其外 側上面標示4之六條導體内,接著向下流進其内側上面標示 4之導體内。該等磁通量拒斥金屬塊組件,係使保持在其橫 跨導體間之全脈波電壓的一半,以容許降低此等磁通量拒 斥金屬塊零件與其他匝之金屬棒間的保持安全間隔。其磁 芯307係由三個線圈307A、B和C所製成,其係賓州Butler 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 35 (請先閲讀背面之注意事項再填寫本頁) ·_·裝— •、可| :線· 573389 A7 ___B7_ 五、發明説明(33 ) 市之 Magnetics,Inc·或加州 Adelanto市之National Arnold所 供應之一 0.0005’’厚導磁係數膠帶纏繞的80-20% Ni-Fe合金 所形成。讀者理應注意的是,德國VACUUM SCHITELZE GmbH所供應之 VITROPERMTM和日本Hitachi Metals所供 應之FINEMETTM等毫微結晶材料,均可被作為彼等電感 器54和64。 在彼等先存技藝式脈波電力系統中,彼等電氣組件之 漏油,係一潛在之問題。在此一較佳實施例中,彼等油絕 緣式組件,係被限制至彼等可飽和電感器。此外,其如第 9B圖中所顯示之可飽和式電感器64,係裝在一罐型含油外 殼内,其中之所有密封連接,均係位於其油層面之上方, 以大幅消除其漏油之可能性。舉例而言,其電感器64中之 最低封口,係顯示在第9B圖中之308處。由於其正常之油 面,係在其外殼306之頂蓋的下方,其油料幾乎不可能漏出 此組體外面,只要其外殼能保持在一直立之狀況中。 電容器 彼等如第5圖中所示之電容器排組42、52、62和82(亦 即,CO、C1、Cp-Ι、和Cp),全係由現貨產品之電容器並 聯連接的排組所構成。彼等電容器42和52,係一些公司在 北卡羅來納州之斯泰茨維爾市或德國威瑪之Vishay Roederstein等供應商所供應之薄膜型電容器。吾等申請人 連接電容器與電感器之較佳方法是,將彼等焊接至一些特 定印刷電路板上面之正負端子,後者係塗敷有一厚鎳層之 銅引線,其方式係類似於美國專利編號第5,448,580號中所 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 36 (請先閲讀背面之注意事項再填寫本頁) -!裝- .、可| 五、發明説明(34 ) 說明者。彼4電谷器組62和64,典型地係由來自類似兩者 均在日本之Murata或TDK等廠商的高電壓陶瓷電容器的並 聯陣列所組成。在一針對此ArF雷射而使用之較佳實施例 中,其電容器排組82(亦即,Cp),係由三十三個〇·3 ηρ電容 恭之排組所組成,以得到一 9.9 nF之電容值;其Cp-Ι係由 二十四個0.40 nF電容器之排組所組成,以得到一 9.6 nF之 總電容值;其C1係一5.7//F之電容器排組,以及其c〇係一 5.3 之電容器排組。 脈波變壓器 此脈波變壓器56,亦係類似於美國專利編號第 5,448,580和5,313,481號中所說明之脈波變壓器;然而,本 實施例之脈波變壓器,在其次級繞組僅有一單匝和24個電 感單元,相當於一 1:24等效昇壓比有關之單一初級匝的 1/24。此脈波變壓器56之繪圖,係顯示在第1〇圖中。每一 24個電感單元,係包括一鋁捲線軸56八,其係具有兩個凸 緣(各具有一扁平邊緣而附有一些有紋螺栓孔),彼等如所 不係沿著第10圖之底部邊緣,以螺栓閂定至印刷電路板 56B之正負端子上面(負端子係此二十四個初級繞組之高電 壓端子)。彼等絕緣體56C,可使每一捲線軸之正端子與相 鄰捲線軸之負端子分開。在其捲線軸之凸緣間,係一長工 吋之空心圓柱體,其外徑為0·875吋,以及壁厚約為1/32 吋。其捲線軸係纏繞有一寬1吋厚〇 7密爾之MetglasTM 2605 S3A,和一厚〇·1密爾之邁拉(聚酯)薄膜,直至此絕緣 MetglasTM包覆層之外徑達2·24吋為止。一形成一初級繞組 573389 A7 B7 五、發明説明(35 ) 之單一包覆捲線軸的透視圖,係顯示在第10A圖中。 其變壓器之次級,係一安裝在一緊密配合之PTFE (TeflonR)絕緣管内的單一时外徑之不銹鋼棒。此繞組如第 10圖中所示為四個節段。此如第10圖中之5 6D所示不銹鋼 次級的低壓端部,係連接至其印刷電路板56B上面之56E處 的初級HV引線,其高電壓端子係顯示在56F處。結果,此 變壓器呈現為一自耦變壓器組態,以及其昇壓比變為1:25 而非1:24。因此,在該等電感單元之+和-端子間,一大約 為-1400伏特之脈波,將會在其次級側上面之端子56F處, 產生一大約-3 5,000伏特之脈波。此單匝次級繞組設計,可 提供極低之漏電感,而容許有極端快速之輸出上升時間。 雷射放電室電氣組件之細節 其Cp電容器82電容器,係由三十三個安裝在其放電室 壓力容器之頂部上面的〇.3nf電容器所構成。該等電極係大 約28吋長,彼等係相隔約0.5至1.0吋。一些較佳之電極係 說明在下文中。在此一實施例中,其頂部電極係稱為陰極, 以及其底部電極如第5圖中所示,係連接至接地端,且係稱 為陽極。KrF有關之較佳間隙間隔為16.5 mm。(ArF有關之 較佳間隙間隔為13.5 mm)。一些較佳之電極將在下文做一 說明。在此一實施例中,其頂部電極係被稱作陰極,以及 其底部電極如5圖中所示,係被連接至接地端,以及係被稱 作陽極。第5圖中標示為Lp之電感,吾等申請人係稱作“壓 縮頭電感’’。此電感係表示其Cp與陰極84間之配線、其放 電區域、和其陽極與Cp間由陽極和一類似第13A(1)圖中之 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 38 (請先閲讀背面之注意事項再填寫本頁) 丨__裝丨The voltage on Co will be divided to reduce the voltage to its desired control voltage, and then its switch Q3 will be turned off. The time constants of the capacitors c0 and ㈣ should be sufficiently fast so as to reduce the voltage of the capacitor Co to the command voltage under a total charge cycle with no detectable amount. As a result, its resonance charger 'can be configured as a three-level regulation control. Its slightly rough adjustment is provided by its energy calculator and its switch-like disconnection during the electrical cycle. When the voltage above it is close to its mesh titanium value, the above q switch will be closed, and when the voltage above its C0 is at or slightly higher than its target value, its resonance charging is stopped. In a preferred embodiment, its switch Q 1 and q open relationship are used to provide an adjustment effect of accuracy +/- 0 · 1/0. If additional adjustments are required, a third type of voltage regulation control can be used. This is the switch-off circuit of the switch ⑴ and 叫 (shown at 216 in the figure), which can discharge q to its precise target value. C. Downstream improvement As mentioned above, the preferred embodiment of the pulse wave power system of the present invention, as shown in FIG. 5A, uses the same as that used in the pre-existing technology system described in FIG. 3. basic design. However, in this basic design, some important improvements need to be made to increase the thermal load by a factor of approximately 6 in response to its greatly increased repetition rate. These improvements are described below. Detailed description of the rectifier and compression head The main components of the rectifier 40 and compression head 60 are shown in Figure 3 and discussed in the background section of the invention regarding the operation of this system. In this note, I will explain the manufacturing details of these rectifiers and compression heads. 0 33 (Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) 573389 A7 B7 V. Description of the Invention (31) Solid State Switch The solid state switch 46 is a P / N CM 800 HA-34H IGBT switch supplied by Powerex, a company located in Youngwood, Pennsylvania. In a preferred embodiment, two such switches are used in parallel. Inductors Inductors 48, 54, and 64 are saturable inductors similar to the prior art systems described in U.S. Patent Nos. 5,448,580 and 5,315,611. Figure 7 shows a preferred design L0 inductor 48. In this inductor, there are four conductors from two IGBT switches 46B, which pass through sixteen ceramic ferromagnetic rings 49 to form an 8-inch hollow cylindrical part with a very high permeability material 48A So that its inner diameter is approximately 1 inch and its outer diameter is approximately 1.5 inches. Each of the four conductors is then wound two times' around an insulating toroidal core to form its part 48B. These four conductors' are then connected to a board which is connected to the high voltage side of its Ci capacitor bank 52. A preferred sketch of one of its saturable inductors 54 is shown in FIG. In this case, its inductor is a single-turn geometry, and here its top and bottom covers 541 and 542 and the central mandrel 543 are all under high voltage, forming one through five Single resistance of inductor core. Its case 545 is at ground potential. Its five magnetic cores are made of 50-50% Ni-Fe alloy wrapped with 0.0005 ’, supplied by Magnetics, Butler, PA or National Arnold, Adelanto, CA. The heat sink 'on the inductor case will help conduct the heat dissipated inside it for forced ventilation cooling. In addition, there is a ceramic disc-shaped sheet. The paper size is applicable to the Chinese national standard (° ^) A4 size (210X297 mm) 34 (Please read the precautions on the back before filling in this page)., OK | 丨! Line 丨 573389 A7 __—__ B7_ V. Description of the Invention (32) (not shown) 'is installed under the bottom cover of its reactor to assist the heat from the central section of this group to the module frame Floor. Figure 8 also shows a high-voltage lead connected to one of its capacitors in the C1 capacitor bank 52 and to one of its inductor units in the 1:25 boost pulse transformer 56. The casing 545 is connected to the ground lead of the above unit 56. A top view and a sectional view of the saturable inductor 64 are shown in Figs. 9A and 9B, respectively. In the inductor of this embodiment, as shown in FIG. 9B, some magnetic flux repellent metal blocks 301, 302, 303, and 304 'are added to reduce the leakage magnetic flux in the inductor. These magnetic flux repellent metal blocks' can greatly reduce the area through which their magnetic flux can penetrate, and thus help to minimize the saturation inductance of their inductors. The current flows around its magnetic core 307, and passes through the vertical conductor rods in the inductor body to become five circuits. Its current enters from 305, and as shown in Fig. 9A, it goes down along a large-diameter conductor in the center marked "1", and along it also marked "丨", the six upper parts on the periphery The small conductor goes up. This current will then flow down into the two conductors marked 2 on its inner side, and then up into the six conductors marked 2 on its outer side. 'Then it flows upwards into the six conductors marked 3 on its outer side, then flows down into the two conductors marked 3 on its inner side, then flows upwards into the six conductors marked 4 on its outer side, and then flows down The inside of the conductor is marked with 4. The magnetic flux-rejecting metal block assembly is kept at half its full pulse voltage across the conductors to allow the magnetic flux-rejecting metal block parts and other turns to be reduced. Keep a safe distance between metal rods. Its magnetic core 307 is made of three coils 307A, B and C, and it is Butler, Penn. This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 35 (Please read the precautions on the back before filling this page) · _ · Installation — •, OK |: Thread 573389 A7 ___B7_ V. Description of Invention (33) Magnetics, Inc. of the city or National Arnold of Adelanto, California One of 0.0005 "thick magnetic permeability tapes wrapped with 80-20% Ni-Fe alloy. Readers should pay attention to nanocrystals such as VITROPERMTM supplied by VACUUM SCHITELZE GmbH in Germany and FINEMETTM supplied by Hitachi Metals in Japan. Materials can be used as their inductors 54 and 64. In their pre-existing pulse-type power systems, oil leakage from their electrical components is a potential problem. In this preferred embodiment, Their oil-insulated components are limited to their saturable inductors. In addition, their saturable inductors 64 as shown in Figure 9B are housed in a can-type oil-containing housing, all of which are sealed The connections are all above its oil level to substantially eliminate the possibility of oil leakage. For example, the lowest seal in its inductor 64 is shown at 308 in Figure 9B. Because of its normal oil Face tied Under the top cover of its case 306, it is almost impossible for its oil to leak out of the group, as long as its case can be kept in an upright position. 62 and 82 (that is, CO, C1, Cp-1, and Cp) are all composed of banks of spot products connected in parallel. The capacitors 42 and 52 are some companies in North Carolina. Film capacitors from suppliers such as Tetsville or Vishay Roederstein of Weimar, Germany. Our applicant's preferred method of connecting capacitors and inductors is to solder them to positive and negative terminals on some specific printed circuit boards, the latter of which are copper leads coated with a thick nickel layer, in a manner similar to US patent numbers The paper size of No. 5,448,580 applies to the Chinese national standard (CNS) A4 specification (210X297 mm) 36 (Please read the precautions on the back before filling this page)-! 装-. 、 可 | V. Description of the invention (34 ) Explainer. The four power valley device groups 62 and 64 are typically composed of parallel arrays of high-voltage ceramic capacitors from manufacturers such as Murata or TDK, both of which are in Japan. In a preferred embodiment used for this ArF laser, the capacitor bank 82 (ie, Cp) is composed of thirty-three 0.3 · ηρ capacitor banks to obtain a 9.9 nF Cp-1 is composed of 24 banks of 0.40 nF capacitors to obtain a total capacitance of 9.6 nF; C1 is a bank of 5.7 / F capacitors, and c. It is a capacitor bank of 5.3. Pulse Transformer This pulse transformer 56 is similar to the pulse transformer described in US Patent Nos. 5,448,580 and 5,313,481; however, the pulse transformer of this embodiment has only one single turn and 24 secondary windings. The inductance unit is equivalent to 1/24 of a single primary turn related to a 1:24 equivalent boost ratio. The drawing of this pulse wave transformer 56 is shown in FIG. 10. Each of the 24 inductor units includes an aluminum spool 568, which has two flanges (each with a flat edge and some patterned bolt holes), and they are not attached as shown in Figure 10. The bottom edge is bolted to the positive and negative terminals of the printed circuit board 56B (the negative terminals are the high-voltage terminals of the twenty-four primary windings). These insulators 56C allow the positive terminal of each spool to be separated from the negative terminal of an adjacent spool. Between the flanges of its spools, a long inch hollow cylinder is attached, with an outer diameter of 0.875 inches and a wall thickness of about 1/32 inches. The spool is wound with a 1-inch-thick MetglasTM 2605 S3A and a 0.1-mil Mylar (polyester) film until the outer diameter of the insulating MetglasTM coating reaches 2.24. Inches. One forms a primary winding 573389 A7 B7 V. A perspective view of a single covered spool of the invention description (35) is shown in Figure 10A. The secondary of the transformer is a single-time outer diameter stainless steel rod installed in a tight-fitting PTFE (TeflonR) insulation tube. This winding is shown in Figure 10 as four segments. The low-voltage end of the stainless steel secondary as shown at 56D in Fig. 10 is connected to the primary HV lead at 56E above its printed circuit board 56B, and its high-voltage terminal is shown at 56F. As a result, the transformer appears as an autotransformer configuration and its boost ratio becomes 1:25 instead of 1:24. Therefore, a pulse of approximately -1400 volts between the + and-terminals of these inductor units will produce a pulse of approximately -3 5,000 volts at terminal 56F above the secondary side. This single-turn secondary winding design provides extremely low leakage inductance while allowing extremely fast output rise times. Details of the electrical components of the laser discharge chamber. The Cp capacitor 82 capacitor is composed of thirty-three 0.3nf capacitors installed on the top of the pressure vessel of the discharge chamber. These electrodes are about 28 inches long, and they are about 0.5 to 1.0 inches apart. Some preferred electrode systems are described below. In this embodiment, the top electrode is referred to as the cathode, and the bottom electrode is connected to the ground as shown in FIG. 5, and is referred to as the anode. The preferred gap interval for KrF is 16.5 mm. (The preferred gap interval for ArF is 13.5 mm). Some preferred electrodes will be described below. In this embodiment, the top electrode is called the cathode, and the bottom electrode is connected to the ground, as shown in Figure 5, and the anode is called the anode. The inductor labeled Lp in Figure 5 is referred to by our applicant as the "compression head inductor". This inductor indicates the wiring between its Cp and cathode 84, its discharge area, and its anode and Cp. A paper size similar to the one in Figure 13A (1) applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 38 (Please read the precautions on the back before filling this page) 丨 _ 装 丨

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573389 A7 B7 五、發明説明(36) — --* 548處所顯示的電流回路結構所構成之配線所形成的電路 之電感。 組件之水冷卻 為谷許較大之熱負載,除藉由其雷射機殼内部所設之 冷卻風扇所提供的正常通風冷卻外,彼等脈波功率組件, 並設置有水冷卻,以支援此較高之平均功率模態下的運作。 水冷卻之一項缺點,在傳統上一直是在其電氣組件或 高電壓接線附近滲漏之可能性。此一特定實施例,大體上 可避免此潛在之難題,其係藉由利用一單一同體節段之冷 卻管,布線在一模組内,藉以冷卻該等通常消散大多數沈 積在此模組内之熱量的組件。由於此模組封殼内部並無接 縫或接頭存在,以及其冷卻管係一同體金屬(例如,銅、不 銹鋼、等等)之連續件,該模組内發生滲漏之機會係被大幅 減少。該模組至冷卻水之接頭,因而係在組體板金封殼之 外部被完成,在此,其冷卻管係與一快速拆接型連接器配 整流器之詳細說明 在上述如第4B圖中所示之整流器模組18艮的情況中, 一水冷式可飽和型電感器54A,在設置上係如第η圖中所 示,類似於第8圖中所示之電感器54,不同的是此電感器54 之散熱片,係代以一如第11圖中所示之水冷式套管54八1。 其冷卻管線54Α2,係布線在其模組内,而環繞在其套管 54Α1四周,以及穿過其安裝有該等IGBT開關和串聯二極體 之銘製底板。此三種組件係構成其模組内大多數之功率消 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 39 (請先閲讀背面之注意事項再填寫本頁) 、可| 五、發明説明(37 ) 耗。其他亦會消散熱量之項目(缓衝二極體和電阻器、電容 器、等等),係由兩個在其模組背部中之風扇所提供的強迫 通風,來加以冷卻。 由於其套管54A1係保持在接地電位下,使其冷卻管直 接裝接至其電抗器外殼,並無電壓隔離之難題。此在完成 上是使其冷卻管,如54A3處所示,壓力配合進其外殼之外 部中所切割成的鳩尾槽内,以及使用一熱傳導性化合物, 協助其冷卻管與外殼間,能具有良好之熱接觸。 高電壓組件之冷卻 雖然其IGBT開關係π浮接’’在高電壓下,彼等係安裝在 一銘製底板上面,而以一 1/16吋厚之氧化鋁板,與該等開 關形成電氣隔離。此紹製底板係具有散熱座之功能,以及 係運作於接地電位之下,而且十分容易被冷卻,因為在其 冷卻回路中,並不需要做高電壓隔離。一水冷式鋁製底板 之繪圖,係顯示在第7 Α圖中。在此一情況中,其冷卻管係 使壓進一其上面安裝有IGBT之鋁製底板中的一個槽溝 内。關於其電感器54A,係使用熱傳導性化合物,來增進 其管道與底板間之整體接合。 該等串聯二極體,在正常運作期間,亦係“浮接”在高 電位下。在此一情況中,其設計中典型所使用之二極體外 殼,並未提供高電壓隔離作用。為提供此必要之絕緣,其 一極體冰球組件,係被夾緊在一散熱座組體内,後者復 係安裝在一陶瓷底板之頂部上面,此陶瓷底板則係安裝在 其水冷式鋁製底板之頂部上面。此陶瓷底板係恰厚至足以573389 A7 B7 V. Description of the invention (36) —-* The inductance of the circuit formed by the wiring formed by the current loop structure shown at 548. The water cooling of the components is a large heat load. In addition to the normal ventilation cooling provided by the cooling fan provided inside the laser casing, their pulse power components are also provided with water cooling to support Operation in this higher average power mode. One disadvantage of water cooling has traditionally been the possibility of leakage near its electrical components or high-voltage wiring. This particular embodiment substantially avoids this potential problem by using a single homogenous segment of cooling tubes to route it in a module, thereby cooling these normally dissipated most of the deposits in the mold. Thermal components within a group. Because there are no seams or joints inside the module enclosure, and its cooling pipe is a continuous piece of integral metal (such as copper, stainless steel, etc.), the chance of leakage in the module is greatly reduced. . The connection between the module and the cooling water is completed outside the metal plate shell of the assembly. Here, the detailed description of the cooling pipe system and a quick-disconnect type connector with rectifier is as described above in Figure 4B. In the case of the rectifier module 18 shown in the figure, a water-cooled saturable inductor 54A is set as shown in FIG. N, similar to the inductor 54 shown in FIG. 8 except that it is different from this. The heat sink of the inductor 54 is replaced by a water-cooled bushing 54 1 as shown in FIG. 11. Its cooling line 54A2 is wired in its module, and surrounds its sleeve 54A1, and passes through the engraved baseplate on which these IGBT switches and series diodes are installed. These three components constitute the majority of the power consumption paper in the module. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 39 (Please read the precautions on the back before filling out this page). SUMMARY OF THE INVENTION (37) Consumption. Other items that dissipate heat (buffer diodes and resistors, capacitors, etc.) are cooled by forced ventilation provided by two fans in the back of the module. Because its sleeve 54A1 is kept at the ground potential, its cooling pipe is directly connected to its reactor casing, and there is no problem of voltage isolation. This is accomplished by making its cooling tube, as shown at 54A3, press fit into the dovetail groove cut into the outside of its casing, and using a thermally conductive compound to assist its cooling tube and casing, which can have a good Thermal contact. Although the cooling of high-voltage components is based on the IGBT floating connection π under high voltage, they are installed on a engraved base plate, and a 1 / 16-inch thick aluminum oxide plate is electrically isolated from the switches. . This base plate has the function of a heat sink, and it operates below the ground potential, and is easily cooled, because high voltage isolation is not required in its cooling circuit. A drawing of a water-cooled aluminum base plate is shown in Figure 7A. In this case, the cooling tube is pressed into a groove in an aluminum base plate on which the IGBT is mounted. Regarding the inductor 54A, a thermally conductive compound is used to improve the overall joint between the pipe and the base plate. These series diodes are also “floating” at high potential during normal operation. In this case, the two-pole outer case typically used in its design does not provide high voltage isolation. To provide this necessary insulation, a polar ice hockey assembly is clamped in a heat sink assembly, which is mounted on top of a ceramic base plate, which is mounted on its water-cooled aluminum The top of the bottom plate. This ceramic base plate is just thick enough

573389 A7 ______B7 五、發明説明(38 ) 提供必要之電隔離,但不會過厚而招致超過必要之熱阻 抗。關於此一特定之設計,其陶瓷係1/16 ”厚之氧化鋁,雖 然其他類似氧化皱專更為奇異之材料,亦可被用來進一步 降低其二極體接面與冷卻水間之熱阻抗。 一水冷式整流器之第二實施例,係利用一單一冷卻板 組體,其係裝接至該等IGBT和二極體所需之機殼底板。該 冷卻板可藉由將單件鎳管銅桿至兩鋁製“頂部,,和“底部,,板 而被製造。誠如上文所述,該等IG]BT和二極體在設計上, 係藉由使用先前所提及在該組體下方之陶瓷碟形片,來將 彼等之熱量傳導進該冷卻板内。在本發明之一較佳實施例 中,此冷卻板之冷卻方法,亦被用來冷卻其共振充電器内 之IGBT和一極體。一熱傳導棒或熱管,亦可被用來自外部 外殼傳導熱量至其機殼板。 壓縮頭之詳細說明 水冷式壓縮頭(見第5圖有關壓縮頭之組件)在其電氣 設計中,係類似於一先存技藝之空氣冷卻型式(所用係相同 類型之陶瓷電容器,以及在其可飽和式電感器料之設計 中,係使用類似之材料)。此一情況中之基本差異此 組務必要運作於較高之重複率下,以及因而在較高之平均 功率下。在此壓縮頭模組之情況中,其大部份之熱量,係 消散於其修改過之可飽和式電感器64A内。冷卻此組體並 非簡單之事件,因為其整個外殼,係使用極高電壓之短 脈波來運作。此難題之解決方案,如第12、12八、和⑽ 圖中所』不,係在電感上使其外殼與接地電位相隔離。此 本紙張尺度適用中關家標準(CNS) A4規格(210X297公幻 41 (請先閲讀背面之注意事項再填寫本頁)573389 A7 ______B7 V. Description of the invention (38) Provide the necessary electrical isolation, but it will not be too thick and cause more than necessary thermal impedance. Regarding this particular design, the ceramic is 1/16 ”thick alumina, although other materials that are more exotic like creped oxide can also be used to further reduce the heat between the diode junction and the cooling water. Impedance. The second embodiment of a water-cooled rectifier uses a single cooling plate assembly that is connected to the chassis base plate required for the IGBTs and diodes. The cooling plate can be made by a single piece of nickel Copper rods are manufactured to two aluminum "top," and "bottom," plates. As noted above, the IG] BT and diodes are designed by using the previously mentioned The ceramic discs under the assembly are used to conduct their heat into the cooling plate. In a preferred embodiment of the present invention, the cooling method of the cooling plate is also used to cool the resonance charger. IGBT and a pole body. A heat conduction rod or heat pipe can also be used to conduct heat from the outer shell to its casing plate. Detailed description of the compression head Water-cooled compression head (see the components of the compression head in Figure 5) Electrical design is similar to air cooling of a pre-existing technology (The same type of ceramic capacitors are used, and similar materials are used in the design of saturable inductor materials.) The basic difference in this case is that this group must operate at a higher repetition rate. And therefore at a higher average power. In the case of this compression head module, most of its heat is dissipated in its modified saturable inductor 64A. Cooling this group is not a simple event Because its entire casing is operated by short pulses of extremely high voltage. The solution to this problem, as shown in Figures 12, 12, and ⑽, is that the casing is connected to the ground potential on the inductor. Isolation. This paper size applies to Zhongguanjia Standard (CNS) A4 specification (210X297 public magic 41 (Please read the precautions on the back before filling this page)

、可丨 線丨 573389 A7 __B7_ 五、發明説明(39 ) 電感在設置上係藉由纏繞其冷卻管,使環繞兩内含某一陶 鐵磁體心芯之圓柱外形的四周。其輸入和輸出冷卻管線, 兩者均係盤繞在一如第12、12A、和12B圖中所示由兩圓柱 部分和兩陶鐵磁體塊所形成之陶鐵磁體心芯四周。 該等陶鐵磁體件,係由紐澤西州Fairfield市之 Magnetics公司所製造之CN-20材料製作成。一單一銅製管 (直徑0.187”),係壓入配合及纏繞在一繞組外形上面,而環 繞在其電感器64A之外殼64A1四周,以及係環繞在其次級 繞組外形四周。在該等端部係留有足夠之長度,使延伸穿 過其壓縮頭板金蓋内之配件,以致在其機座内並無冷卻管 接頭存在。 其電感器64 A係包括一如64 A2處所顯示之螞尾槽溝, 與上述水冷式整流器之第一級段電抗器外殼中所使用者相 類似。此外殼係甚類似於先前之氣冷式型式,除此鳩形尾 槽溝不同外。其銅製冷卻水管,係壓入配合進此槽溝内, 以使其外殼與冷卻水管間,有良好之熱連結。為極小化其 熱阻抗,亦有一熱傳導性化合物加入。 其電感器64A之電氣設計,係與第9A和9B圖中所顯示 之64者略有改變。此電感器64A在其磁芯64A3四周,僅設 置有兩條迴路(而非五條迴路),後者係由四圈膠帶(而非三 條)所構成。 由於此自輸出電位至接地之水冷式管道傳導路徑的 結果所致,其偏壓電流電路如今將稍有不同於第5圖中所 示。如同上文,其偏壓電流,係由一整流器内之一 dc-dc 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 42 (請先閲讀背面之注意事項再填寫本頁)You can wire 573389 A7 __B7_ V. Description of the invention (39) The inductor is set by winding its cooling tube so as to surround the two cylindrical shapes that contain a certain ferromagnetic core. The input and output cooling lines are both coiled around a ceramic ferromagnetic core formed by two cylindrical portions and two ceramic ferromagnetic blocks as shown in Figures 12, 12A, and 12B. These ceramic ferromagnetic parts are made of CN-20 materials manufactured by Magnetics Corporation of Fairfield, New Jersey. A single copper tube (0.187 "in diameter) is press-fitted and wound around a winding profile, surrounding the 64A1 case of its inductor 64A, and surrounding its secondary winding profile. Tethered at these ends It has sufficient length to extend through the fittings in the gold cover of its compression head plate, so that there is no cooling pipe joint in its base. Its inductor 64 A series includes an ant tail groove as shown at 64 A2, It is similar to the user of the first-stage reactor shell of the water-cooled rectifier mentioned above. This shell is very similar to the previous air-cooled type, except that this dovetail groove is different. Its copper cooling water pipe, pressure It fits into this groove, so that there is a good thermal connection between its shell and the cooling water pipe. In order to minimize its thermal resistance, a thermally conductive compound is also added. The electrical design of its inductor 64A is related to the 9A and The 64 shown in 9B is slightly changed. This inductor 64A is provided with only two loops (instead of five loops) around its magnetic core 64A3, which is composed of four loops of tape (instead of three). by As a result of the conduction path from the output potential to the grounded water-cooled pipe, its bias current circuit will now be slightly different from that shown in Figure 5. As above, its bias current is determined by the voltage in a rectifier. One dc-dc This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 42 (Please read the precautions on the back before filling this page)

•、可I• 、 可 I

573389 A7 ~~ --—---— __ 五、發明説明(4〇 ) 轉換器,經由一纜線供應進其壓縮頭内。此電流將會行經 其“正’’偏壓電感器“2,以及係連接至其Cp lt壓節點。此 電流接著會被分離,其一部份會經由其Hv電纜(行經其變 壓器次級而至接地,以及返至其dc_dc轉換器),而返至其 整流器。其另一部份會行經其壓縮頭電抗器。〗(對其磁控 開關產生偏壓),以及接著會行經其冷卻水管“負,,偏壓電感 器LB3,以及返至接地端和其dc_dc轉換器。藉由平衡每一 支路中之電阻,其設計者將能夠確保其有足夠之偏壓電 流,供應給其壓縮頭電抗器和整流器變壓器兩者。 其“正”偏壓電感器Lm,係與其“負,,偏壓電感器ίΒ3極 為雷同。在此一情況中,相同之陶鐵磁體棒和部件,係被 用作一磁芯。然而,有兩個厚0.125π之塑料隔片,被用來 在其磁路中建立一空隙,以使其心芯不會因此扣電流而飽 和。取代以冷卻水管纏繞其電感器的,是在其外形四周纏 繞一 18 AWG鐵氟龍線。 快速連接 在此較佳之實施例中,有三個脈波功率電氣模組,係 利用封口配合電連接器,以致所有對此部份之雷射系統的 電氣連接,僅係藉由將此模組滑進其在雷射機殼中之定位 而可被完成。其中有AC配電模組、電源供應器模組、和共 振充電模組。在每一情況中,一在此模組上面之陽或陰插 頭,可與其安裝在機殼背部之異性插頭配合。在每—情況 中,兩隻在其模組上面大約3吋長端部成椎形之銷,可引導 此模組進入其精確位置,以使此等電插頭能適當配合。該 43 (請先閲讀背面之注意事項再填寫本頁) :線· 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 __B7_ 五、發明説明(Μ ) 等類似AMP型號194242-1等封口配合連接器,係由公司在 賓州哈里斯堡之AMP Inc.上市。在此一實施例中,彼等連 接器可用於多種電力電路,諸如208伏特AC、400伏特AC、 1000伏特DC(電源供應器輸出和共振充電輸入)、和數種信 號電壓。此等封口配合連接器,可容許此等模組在數秒或 數分鐘内移出,以便維修及更換。在此一實施例中,彼等 封口配合連接器,並未就其整流器模組而被使用,因為此 模組之輸出電壓,係在20至30,000伏特之範圍内。取而代 之的,是使用一典型之高電壓連接器。 饋送至陰極 (增加電感有關之技術) 誠如第5圖中所指示及如上文所解釋,其波峰電容器 排組Cp,82,係由33個0.3 nF電容器之排組所組成。此等 電容器之底部,係連接至接地端(亦即,放電室頭),以及 其頂部係連接至一稱作電暈屏蔽之金屬板。此電暈屏蔽復 以15條金屬棒連接至其陰極,該等金屬棒係稱作降流棒, 彼等係穿過一單件主絕緣體,以及係旋緊進第13A圖中所 示之陰極541的頂部内。此單件絕緣體係說明在美國專利編 號第6,208,674號中,其係藉由參照而合併進此說明書中。 在某些情況中,在其脈波功率電路之高電壓部分中,希望 能增加其電感。此種增加將可造成其雷射脈波時寬之增 加。吾等申請人業已決定出,一產生此增加之電感的較佳 方法是,設置短的(舉例而言,約1%吋)使其CP電容器排組 中之每一電容器相連接之支棒和至電暈板之降流棒。此將 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 44 (請先閲讀背面之注意事項再填寫本頁) 、τ·573389 A7 ~~ ------ __ 5. Description of the invention (40) The converter is supplied into its compression head via a cable. This current will flow through its "positive '' bias inductor" 2 and be connected to its Cp lt voltage node. This current is then split and a portion of it is returned to its rectifier via its Hv cable (passing through its transformer secondary to ground and back to its dc_dc converter). The other part will pass through its compression head reactor. 〖(Bias its magnetic control switch), and then pass through its cooling water pipe "negatively, bias the inductor LB3, and return to the ground and its dc_dc converter. By balancing each of the branches The resistor whose designer will be able to ensure that it has sufficient bias current to supply both its compression head reactor and rectifier transformer. Its "positive" bias inductor, Lm, is its "negative," bias inductor. The device ίΒ3 is very similar. In this case, the same ceramic ferromagnetic rods and components are used as a magnetic core. However, there are two 0.125π-thick plastic spacers that are used to create a gap in their magnetic circuit so that their cores will not be saturated by the current. Instead of winding its inductor with a cooling water pipe, an 18 AWG Teflon wire is wrapped around its shape. Quick connection In this preferred embodiment, there are three pulse wave power electrical modules, which are sealed with electrical connectors, so that all electrical connections to the laser system in this part are made by sliding this module only Its positioning into the laser case can be done. Among them are AC power distribution modules, power supply modules, and resonant charging modules. In each case, a male or female plug on the module can be mated with a heterosexual plug mounted on the back of the case. In each case, two vertebral pins about 3 inches long on the module can guide the module into its precise position so that these electrical plugs can fit properly. The 43 (Please read the precautions on the back before filling this page): Line · This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 573389 A7 __B7_ 5. Description of the invention (Μ) and other similar AMP models 194242 -1 and other sealing mating connectors are listed by the company at AMP Inc. in Harrisburg, Pennsylvania. In this embodiment, their connectors can be used in a variety of power circuits, such as 208 volt AC, 400 volt AC, 1000 volt DC (power supply output and resonant charging input), and several signal voltages. These seals, coupled with the connectors, allow these modules to be removed in seconds or minutes for repair and replacement. In this embodiment, their sealing and mating connectors are not used for their rectifier modules because the output voltage of this module is in the range of 20 to 30,000 volts. Instead, a typical high voltage connector is used. Feed to the cathode (technology related to increasing inductance) As indicated in Figure 5 and explained above, its peak capacitor bank Cp, 82 is composed of 33 banks of 0.3 nF capacitors. The bottom of these capacitors is connected to the ground (i.e., the head of the discharge cell), and the top is connected to a metal plate called a corona shield. This corona shield is connected to its cathode with 15 metal rods, which are called downflow rods, which pass through a single piece of main insulator and are screwed into the cathode shown in Figure 13A Inside the top of 541. This one-piece insulation system is described in U.S. Patent No. 6,208,674, which is incorporated herein by reference. In some cases, it is desirable to increase its inductance in the high voltage portion of its pulsed power circuit. Such an increase would result in an increase in the laser pulse width. Our applicants have decided that a better way to generate this increased inductance is to set short (for example, about 1% inches) rods and capacitors to which each capacitor in the CP capacitor bank is connected. Go down to the corona plate. Therefore, the paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) 44 (Please read the precautions on the back before filling this page)

573389 A7 -----一__B7_ 五、發明説日7^42 ) 一 ' "" ~— 可增加CP與陰極間之電氣路徑的長度,而可大幅增加此部 份電路中之電感。其電感中之增加量,可藉由選擇該等支 棒之長度來加以修改。另一增加電感之技術是,去除一歧 第13A(3)圖中所示之電流回路肋片,及/或15個使電暈屏 蔽連接至陰極之降流棒中的某些。去除其陰極之每一端部 處的某些降流棒,具有大約3.5 mm之另一優點。 放電組件 第13和13 A(l)圖係顯示本發明之較佳實施例中所利用 之一改良型放電組態的細節。此組態係包括吾等申請人稱 作葉片-介電質電極之一電極組態。在此設計中,其陽極54〇 係包括一鈍葉片形電極542,以及如所顯示在其陽極兩側, 係安裝有一些介電質隔片544,以改良其放電區域内之氣體 流動。此等隔片係以螺釘裝接至其陽極支撐桿546,而使該 等隔片之每一端部處的螺釘,超過其放電區域。該等螺釘 可容許該等隔片與支撐桿間,有熱膨脹滑動。其陽極係26.4 吋長和0.439吋高。其底部係〇 284吋寬,以及其頂部處之 寬度係經選擇’藉以大致決定其所希望之放電寬度。就此 10,000 Hz之實施例而言,其寬度大約為丨〇至丨5 mm。其 係藉由使螺釘穿過管座,而被裝接至其氣流整形陽極支撐 桿546,此可容許其電極離其中心位置之差分熱膨脹。其陽 極係由一以銅為主材之合金,最好是C36〇〇〇、C954〇〇、或 C19400’所製成。其陰極541係具有一如第13八圖中所示之 截面形。一較佳之陰極材料係C36〇〇〇。此葉片介電組態之 額外細節,係提供於美國專利編號第〇9/768,753號中,其 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 45573389 A7 ----- One __B7_ V. Invention Day 7 ^ 42) One '" " ~ — Can increase the length of the electrical path between CP and cathode, and can greatly increase the inductance in this part of the circuit . The increase in the inductance can be modified by selecting the length of these rods. Another technique to increase inductance is to remove the current loop ribs shown in Fig. 13A (3) and / or some of the 15 downflow bars that connect the corona shield to the cathode. Removing some downflow rods at each end of its cathode has another advantage of about 3.5 mm. Discharge Modules Figures 13 and 13 A (l) show details of an improved discharge configuration utilized in a preferred embodiment of the present invention. This configuration includes an electrode configuration that our applicants call one of the blade-dielectric electrodes. In this design, its anode 54 includes a blunt blade-shaped electrode 542, and as shown on both sides of its anode, some dielectric spacers 544 are installed to improve the gas flow in its discharge area. These spacers are screwed to their anode support rods 546 so that the screws at each end of the spacers exceed their discharge area. These screws allow thermal expansion and sliding between the spacers and the support rod. Its anode is 26.4 inches long and 0.439 inches high. The bottom is 284 inches wide, and the width at the top is selected to roughly determine its desired discharge width. For this embodiment of 10,000 Hz, the width is approximately 0 to 5 mm. It is attached to its airflow shaping anode support rod 546 by passing a screw through the socket, which allows differential thermal expansion of its electrode from its center position. The anode is made of a copper-based alloy, preferably C360000, C95400, or C19400 '. The cathode 541 has a cross-sectional shape as shown in FIG. A preferred cathode material is C360000. Additional details of the dielectric configuration of this blade are provided in US Patent No. 09 / 768,753. The paper size applies to the Chinese National Standard (CNS) A4 (210X297). 45

.訂丨 :線丨 (請先閲讀背面之注意事項再填寫本頁) …裝- 573389 A7 -----------B7 —_ 五、發明制(43 ) " ------- 係藉由參照而合併進此說明書中。其在此一組態中之電流 回路548,係由—鯨骨形部分所構成而沿其電極542之長 度’具有27片等間隔排列之肋片,其截面係顯示在第Μ⑴ 圖中。誠如上文所述,其電流回路係製自金屬片,以及其 紅骨形肋片(各具有大約〇.! 5对χ 〇 〇 9吁之橫截面尺度)係 =以扭絞,以使每-肋片之長維度,在其電流流動之方向 第13Α2圖中係顯示其陽極有關可做更大改良之一他 型介電質隔片設計。在此-情況中,該等隔片與其氣流整 形陽極支撐桿,更能完全配合,藉以提供—更佳之氣體流 動路徑。吾等中請人稱此為彼等之"緊背"葉片介電負陽極 設計。 絕緣體覆蓋式電極 一較佳之電極組態,係顯示在第13B圖中。在此一情 況中,其陰極541C和陽極542C兩者,均係由黃銅製成。此 等電極之-部份或所有之表面,係覆以一約厚達125微米之 氧化鋁層600和602。此氧化鋁最好係以一電漿噴鍍技術施 加至其表面。有數量極大之孔6〇4和6〇6,鑽經此氧化鋁, 而如第13B圖中之604和606處所示,至其黃銅製基體。此 等在陰極和陽極兩者上面之孔的直徑,最好是在5〇微米至 200個微米之間。一較佳之尺度大約為1〇〇微米。此等孔可 以一激態分子雷射加以鑽出。吾等申請人就一約5_1〇%之 暴露區域,將建議一大約每平方毫米1〇個孔之孔密度。此 種電極没計係被預期可提供壽命極長之電極。其亦可容許 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公董).Order 丨: Line 丨 (Please read the notes on the back before filling this page)… install-573389 A7 ----------- B7 —_ V. Invention System (43) " --- ---- It is incorporated into this manual by reference. The current loop 548 in this configuration is composed of a whale-shaped portion and has 27 equally spaced ribs along the length of the electrode 542 ', and its cross section is shown in the figure M⑴. As mentioned above, its current loop is made from a metal sheet, and its red bone-shaped ribs (each with a cross-sectional dimension of about 0.5 to χ 〇009) are twisted so that -The long dimension of the ribs, shown in Figure 13A2 in the direction of its current flow, shows that its anode is one of the other types of dielectric spacer designs that can be further improved. In this case, the separators and their air-shaping anode support rods are more fully matched, thereby providing—a better gas flow path. We call this their "tight back" blade dielectric negative anode design. Insulator Covered Electrode A preferred electrode configuration is shown in Figure 13B. In this case, both the cathode 541C and the anode 542C are made of brass. Some or all of the surfaces of these electrodes are coated with alumina layers 600 and 602 up to about 125 microns thick. This alumina is preferably applied to its surface by a plasma spraying technique. There are a large number of holes 604 and 606, drilled through this alumina, and as shown at 604 and 606 in Figure 13B, to its brass substrate. The diameter of these holes on both the cathode and anode is preferably between 50 microns and 200 microns. A preferred size is about 100 microns. These holes can be drilled with an excimer laser. Our applicant will suggest a pore density of about 10 holes per square millimeter for an area of about 5-10% of the exposed area. Such electrodes are not expected to provide extremely long life electrodes. It can also allow this paper size to apply Chinese National Standard (CNS) A4 specifications (210X297 public directors)

!-裝- 、?τ— 線丨 (請先閲讀背面之注意事項再填寫本頁) 573389 A7 B7 ~~ 丨._ 五、發明説明(44 ) 精確控制其放電之寬度。其腐蝕率矸降低數個數量級之大 小,因為其放電表面係大程度受到其氧化鋁蓋之保護,而 可免於氟氣之攻擊。其陰極由於飛濺所致之腐蝕,亦可大 幅降低,因為其陰極組態,可提供空心陰極之效應,其中, 飛濺出之金屬離子,將會與其孔内之黃銅基質重新結合, 而非形成一些金屬氟化物。 具快速控制演算法之超快速波長計 控制脈波能量、波長、和頻寬 一積體電路平版印刷術所用之先存技藝式激態分子 雷射,在雷射光束參數方面,係受到嚴格規範之限制。此 典型地需要測量每一脈波有關之脈波能量、頻寬、和中心 波長,以及回授控制其脈波能量和頻寬。在其先存技藝式 裝置中,其脈波能量之回授控制,係以脈波對脈波之條件, 亦即,每一脈波之脈波能量,係足夠迅速地加以測量,以 致其所成之資料,可被用於其控制演算法中,來控制其緊 接脈波之能量。就一 1,000 Hz之系統而言,此係意謂其次 一脈波之測量和控制,耗時務必要少於1/1000秒。就一 4.000 Hz之系統而言,彼等速率將需要快四倍,以及就一 10.000 Hz之系統而言,彼等速率將需要快10倍。一種可用 以控制其中心波長及測定其波長和頻寬之技術,係說明在 美國專利編號第 5,025,455 號 ’’System, and Method of Regulating the Wavelength of a Light Beam’’(調節光束波長 之系統和方法)中,和美國專利編號第5,978,394 號’’Wavelength and System for an Excimer Laser”(激態分子 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 47 (請先閲讀背面之注意事項再填寫本頁) !-裝- 訂— 573389 A7 B7 五、發明説明(45 雷射有關之波長和系統)中。此等專利係藉由參照而合併進 此說明書中。 波長和頻寬係就每一脈波逐脈波地做測量,但其波長 之回授控制,典型地將採用大約7毫秒,因為先存技藝式用 以控制中心波長之技術,係採用數毫秒之多。較快速之控 制是有其必要。 光束參數之快速測量和控制有關的較佳實施例 本發明之一較佳實施例,為一激態分子雷射系統,其 可運作於4,000 Hz至10,000 Hz之範圍内,而能極快速測量 彼等雷射光束參數,以及能極快速控制其脈波能量和中心 波長。此雷射有關之光束參數的測量和控制,將說明於下 文。 此實施例中所使用之波長計,係類似於美國專利編號 第5,978,394號中所說明者,以及下文之某些說明係摘錄自 該專利。 測定光束參數 第14圖係顯示一較佳之波長計單元12()、一絕對波長 參考校正單元190、和一波長計處理器197的布局。 此等單元中之光學設備,可測量脈波能量、波長、和 頻寬。此等測量係供彼等回授電路使用,藉以使脈波能量 和波長維持在其所希望之限度内。此設備可基於來自其雷 射系統控制處理器之指令,藉由參照一原子參考源來做自 我校準。 誠如第14圖中所示,其雷射輸出光束,有部份與其反 本紙張尺度適用中國國家標準(CNS) M規格(2K)X297公釐 -48 - (請先閲讀背面之注意事項再填寫本頁) ——裝丨 :線丨 573389 A7 _B7_ 五、發明説明(46 ) 射面鏡170相交,後者可使大約95.5%之光束能量通過,而 成為其輸出光束33,以及可反射大約4.5%,以供脈波能 量、波長、和頻寬之測量用。 脈波能量 有大约4%之反射光束,會被其面鏡171反射至其能量 偵測器172,後者係包括一極快速之發光二極體69,其可測 量每秒4,000至10,000 Hz之脈波速率下所發生之個別脈波 的能量。此脈波能量大約為7.5 mJ,以及其偵測器69之輸 出,係被饋送至一電腦控制器,其係使用一特定之演算法, 來調整其雷射充電電壓,以便基於所儲存之脈衝能量資 料,來精確控制彼等未來脈波之脈波能量,藉以限定個別 脈波之能量和脈衝串之積分能量中的變動。 線性發光二極體陣列 其線性發光二極體陣列180之感光性表面,係描繪在 第14A圖中。此陣列係一積體電路晶片,其係包括1024個 獨立之發光二極體積體電路,和一相關聯之取樣暨保存讀 出電路(未示出)。此等發光二極體,係成25.6 mm之間距, 而使總長度為25.6 mm(大約1吋)。每一發光二極體係500 微米長。 如此之發光二極體陣列,有幾處來源供應。一較佳之 供應商為Hamamatsu。在吾等之較佳實施例中,吾等係使 用型號S3903-1024Q,其可在FIFO之基礎上,在4 X 106圖 素/秒之速率下做讀取,其中,全部1024個圖素掃描,可 在4,000 Hz或以上之速率下被讀取。其PDA在設計上係供2 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 49 (請先閱讀背面之注意事項再填寫本頁) •訂丨! -Pack-,? Τ— cable 丨 (Please read the precautions on the back before filling this page) 573389 A7 B7 ~~ 丨 ._ 5. Description of the invention (44) Control the width of the discharge accurately. Its corrosion rate is reduced by several orders of magnitude, because its discharge surface is largely protected by its alumina cover, which is free from the attack of fluorine gas. Corrosion of the cathode due to sputtering can also be greatly reduced, because its cathode configuration can provide the effect of a hollow cathode, in which the sputtered metal ions will recombine with the brass matrix in their pores instead of forming Some metal fluorides. Ultra-fast wavelength meter with fast control algorithm controls pulse energy, wavelength, and bandwidth. Pre-existing state-of-the-art excimer lasers used in integrated circuit lithography are strictly regulated in terms of laser beam parameters. Restrictions. This typically requires measurement of the pulse energy, bandwidth, and center wavelength associated with each pulse, and feedback control of its pulse energy and bandwidth. In its pre-existing technical devices, the feedback control of its pulse wave energy is based on the condition of pulse wave to pulse wave, that is, the pulse wave energy of each pulse wave is measured quickly enough so that The completed data can be used in its control algorithm to control the energy of the pulse wave. For a 1,000 Hz system, this means the measurement and control of the next pulse, which must take less than 1/1000 second. For a 4.000 Hz system, their rates will need to be four times faster, and for a 10.000 Hz system, their rates will need to be 10 times faster. A technique that can be used to control its center wavelength and measure its wavelength and bandwidth is described in U.S. Patent No. 5,025,455 `` System, and Method of Regulating the Wavelength of a Light Beam '' ), And U.S. Patent No. 5,978,394 `` Wavelength and System for an Excimer Laser ”(excimer paper size applies to Chinese National Standard (CNS) A4 specification (210X297 public love) 47 (Please read the precautions on the back first) (Fill in this page again!)-Binding-Binding-573389 A7 B7 V. Description of the invention (45 laser-related wavelengths and systems). These patents are incorporated into this specification by reference. The wavelength and bandwidth are Each pulse is measured on a pulse-by-pulse basis, but the feedback control of its wavelength will typically take about 7 milliseconds, because the technology of the pre-existing technology to control the central wavelength uses milliseconds. It is faster Control is necessary. A preferred embodiment related to the rapid measurement and control of beam parameters. A preferred embodiment of the present invention is an excimer laser system. It can operate in the range of 4,000 Hz to 10,000 Hz, and can measure their laser beam parameters very quickly, and can control their pulse energy and center wavelength very quickly. Measurement and control of this laser-related beam parameters, The wavelength meter used in this example is similar to that described in U.S. Patent No. 5,978,394, and some of the following descriptions are extracted from the patent. Measuring beam parameters Figure 14 The layout of a preferred wavelength meter unit 12 (), an absolute wavelength reference correction unit 190, and a wavelength meter processor 197 is shown. The optical equipment in these units can measure pulse wave energy, wavelength, and bandwidth. This Isometry is used by their feedback circuits to maintain pulse energy and wavelengths within their desired limits. This device can be based on instructions from its laser system control processor by referring to an atomic reference source Self-calibration. As shown in Figure 14, part of the laser output beam and its anti-paper size apply Chinese National Standard (CNS) M specification (2K) X297 mm -48-( (Read the precautions on the back before filling in this page) ——Installation 丨: Line 丨 573389 A7 _B7_ V. Description of the invention (46) The mirror 170 intersects, which can pass about 95.5% of the beam energy into its output beam 33, and can reflect about 4.5% for pulse wave energy, wavelength, and bandwidth measurement. About 4% of the pulse wave energy reflected beam, will be reflected by its mirror 171 to its energy detector 172, The latter consists of a very fast light-emitting diode 69, which measures the energy of individual pulses occurring at pulse rates of 4,000 to 10,000 Hz per second. This pulse wave energy is about 7.5 mJ, and the output of its detector 69 is fed to a computer controller, which uses a specific algorithm to adjust its laser charging voltage based on the stored pulse The energy data is used to precisely control the pulse wave energy of their future pulse waves, thereby limiting the changes in the energy of individual pulse waves and the integrated energy of the pulse train. Linear Light Emitting Diode Array The photosensitive surface of linear light emitting diode array 180 is depicted in Figure 14A. The array is an integrated circuit chip, which includes 1024 independent light-emitting diode volume circuits, and an associated sample and hold readout circuit (not shown). These light-emitting diodes are spaced at a distance of 25.6 mm, so that the total length is 25.6 mm (about 1 inch). Each light-emitting diode system is 500 microns long. Such light-emitting diode arrays are supplied from several sources. A better supplier is Hamamatsu. In our preferred embodiment, we use the model S3903-1024Q, which can be read at a rate of 4 X 106 pixels / second based on the FIFO, of which all 1024 pixels are scanned , Can be read at a rate of 4,000 Hz or above. The PDA is designed for 2 paper sizes. It is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 49 (Please read the precautions on the back before filling this page).

573389 五、發明説明(47 χίο6個圖素/秒之運作用,但吾等申請人發現到,其係可 能加快時鐘信號而使運作更為快速,亦即,高達4 X 1〇6個 圖素/秒。就大於4,000 Hz之脈波速率而言,吾等申請人可 使用同一PDA,但每一掃描通常僅有部份(例如6〇%)之圖素 被言買取出。 較快速之線性陣列 就10,000 Hz之運作而言,波長和頻寬之計算,有脈波 對脈波之資料分析可供利用。在每秒5 χ丨〇6個圖素下,其 1024圖素陣列上面,大約有一半圖素,可在讀取資料所用 之脈波間,就每一脈波之所有時間而被讀取出。其一解決 方案,或為基於少於每一脈波,來監控波長和頻寬,諸如 母一第四個脈波,或每一第二個脈波。其另一解決方案, 為程式規劃其波長計之控制,以便唯有一些被選定之圖素 被讀取,其係基於使用一預測性演算法,其可使用歷史性 資料,來預測其陣列上面之條紋資料的位置。一更有利之 解決方案,為找出一較快速之陣列。吾等申請人業已決定 出,背向照射式CCD陣列,可被利用來提供每秒大約1〇至 15 X 10個圖素之嚮應時間。一較佳之陣列為公司在曰本東 京之Hamamatsu所供應之Model SXXX1002。 另一可加速其波長分析之技術,為利用一位於其波長 «十處之數位彳§號處理器’而如上文所述地,來執行盆波長 之計算。 粗調波長測量 大約有4%通過面鏡171之光束,會被面鏡173反射,經 (請先閲讀背面之注意事項再填寫本頁) ·!裝-573389 V. Description of the invention (47 χίο 6 pixels / second operation, but our applicants found that it may speed up the clock signal and make the operation faster, that is, up to 4 X 106 pixels For pulse rates greater than 4,000 Hz, our applicants can use the same PDA, but usually only a portion (for example 60%) of the pixels are bought out per scan. Faster linearity For the operation of the 10,000 Hz array, the calculation of the wavelength and bandwidth has pulse wave-to-pulse data analysis available. At 5 χ 〇 06 pixels per second, above its 1024 pixel array, about Half of the pixels can be read between the pulses used to read the data for all the time of each pulse. One solution is to monitor the wavelength and bandwidth based on less than each pulse , Such as the mother-fourth pulse, or every second pulse. Another solution is to program the control of its wavelength meter so that only some selected pixels are read, which is based on Use a predictive algorithm that can use historical data to predict Location of the stripe data above. A more advantageous solution is to find a faster array. Our applicants have decided that a back-illuminated CCD array can be used to provide approximately 10 to 15 per second. X 10 pixel response time. A better array is the Model SXXX1002 supplied by the company's Hamamatsu in Tokyo, Japan. Another technology that can accelerate its wavelength analysis is to use a digital digit located at «ten places of its wavelength 彳§ No. processor 'and perform the calculation of the wavelength of the basin as described above. Approximately 4% of the coarse wavelength measurement passes through the mirror 171 and will be reflected by the mirror 173. (Please read the precautions on the back first Fill out this page again)

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573389 A7 ____Β7_ 五、發明説明(48 ) 過狹縫177,而至面鏡174,而至面鏡175,而返至面鏡174, 以及至中階梯光栅176上面。此光束會被一焦距為458.4 mm之透鏡178加以準直。其自光栅176折回經過透鏡178所 反射之光波,將會再次自面鏡174、175、和再次之174反射, 以及接著自面鏡179反射,以及會如第14B圖之上部中所顯 示,聚焦在圖素600至圖素950(圖素0-599係保留供細調波 長測篁和頻寬用)之區域内的1024•圖素線性發光二極體陣 列18 0之左侧上面。該光束在此發光二極體陣列上面之空間 位置’係其輸出光束之相對標稱波長的粗調測量。舉例而 言,誠如第14B圖中所示,其波長範圍在193.350 pm附近之 光波,將會聚焦在圖素750上面和其鄰近。 粗調波長之計算 其波長计模組12 0中之粗調波長光學器件,可在苴發 光二極體陣列180之左側上面,產生一大約〇 25 χ 3 mm 之矩形影像。此十或十一個被照射之發光二極體,將會產 生一些正比於其所接收照度(如第14C圖中所示)之強度的 信號,以及此等信號將會被其波長計控制器1 97中之一處理 器所讀取及數位化。使用此資訊和一内插演算法,其控制 器197可計算出該影像之中央位置。 此一位置(以圖素為單位來測量)將會使用兩校正係 數,以及假定其位置與波長間有一線性關係,而被轉換成 一粗調波長值。此等校正係數,係如下文所說明,藉由參 照一原子波長參考源來加以決定。舉例而言,其影像位置 與波長間之關係,可為以下之演算法: 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 51 (請先閲讀背面之注意事項再填寫本頁)573389 A7 ____ Β7_ V. Description of the invention (48) Through the slit 177, to the mirror 174, to the mirror 175, to the mirror 174, and to the middle step grating 176. This beam is collimated by a lens 178 with a focal length of 458.4 mm. The light waves reflected back from the grating 176 through the lens 178 will be reflected again from the mirrors 174, 175, and 174 again, and then reflected from the mirror 179, and will be focused as shown in the upper part of Figure 14B. In the area of pixels 600 to 950 (pixels 0-599 are reserved for fine-tuning wavelength measurement and bandwidth), the upper left side of the 1024 pixel linear light emitting diode array 180. The spatial position of the light beam above the light emitting diode array is a coarse adjustment measurement of the relative nominal wavelength of its output light beam. For example, as shown in Figure 14B, a light wave with a wavelength range around 193.350 pm will be focused on pixel 750 and its vicinity. Calculation of Coarse Tuning Wavelength The coarse tuning wavelength optics in its wavelength meter module 120 can produce a rectangular image of approximately 0.25 x 3 mm on the left side of the diode array 180. The eleven or eleven light-emitting diodes that are irradiated will produce some signals that are proportional to the intensity of their received illuminance (as shown in Figure 14C), and these signals will be controlled by their wavelength meter controller. Read and digitized by one of the processors. Using this information and an interpolation algorithm, its controller 197 can calculate the center position of the image. This position (measured in pixels) will be converted to a coarse wavelength value using two correction factors and assuming a linear relationship between position and wavelength. These correction factors are determined as described below by referring to an atomic wavelength reference source. For example, the relationship between the image position and the wavelength can be the following algorithm: This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 51 (Please read the precautions on the back before filling this page )

573389 A7 _______B7_ 五、發明説明(49 ) λ =(2.3pm/pixel)P+191?625 pm 其中,P=粗調影像中心位置。 或者’右有需要可猎由加入一類似’’+()p2等二次項, 而加入額外之精確度。 細調波長之測量 其如第14圖中所顯示,大約95%通過面鏡173之光束, 將會反射離開面鏡182,經過透鏡183,而至一標準具組體 184之輸入處的散光片(最好如以下名為”改良式標準具,,之 節段中所解釋之繞射散光片)上面。其離開標準具組體 之光束,將會被此標準具組體内一焦距為458 4 mm之透鏡 所聚焦,以及將會在反射離開如第14圖中所示之兩片面鏡 後,在其線性發光二極體陣列1 80之中部和右侧上面,產生 一些干涉條紋。 其分光計務必要能大上能即時測量其波長和頻寬。因 為其雷射重複率可能為4,000 Hz至6,000 Hz,其有必要使用 些正確但非計算密集之演算法,以便能以經濟而袖珍之 處理電子電路,來達成其所希望之性能。所以,其計算性 演算法,最好應使用整數數學而非浮點數學,以及其數學 運算,最好應具計算效率(不使用平方根、正弦、對數、等 等)。 兹將說明此較佳實施例_所使用之較佳演算法的特 定細節。第14D圖如所示係一具有5個峰值之曲線,其係表 示其線性發光二極體陣列180所測量之一典型標準具條紋 信號。其中央峰值之高度在繪製上,係較其他為低。當不 本紙張尺度標準_ A4規格⑵_7公楚)"Π9 ~*-- (請先閲讀背面之注意事項再填寫本頁) ’、^Ti 線丨 573389 A7 B7 五、發明説明(5〇 同波長之光波進入此標準具内時,其中央峰值將會上升及 下降’有時會變為零。此特徵使得此中央峰值不適合做波 長測量用。其他峰值將會響應波長之變動,而移向或遠離 此中央峰值,以致此等峰值之位置,將可被用來決定波長, 而彼等之寬度可測量雷射之頻寬。第14D圖中顯示有兩個 各標示為資料窗口之區域。此等資料窗口在定位上,係使 其最接近中央峰值之條紋,通常被用來做分析用。然而, 當波長改變而使條紋移動過於接近其中央峰值(此將會造 成失真和所成之錯誤)時,其第一尖峰將會在該窗口外,但 其第二最接近之峰值將會在該窗口内,以及其軟體可使其 控制模組197内之處理器,使用此第二峰值。反之,當波長 改變而使當前之峰值移動遠離其中央峰值而至該窗口外 時’其軟體將會跳至其資料窗口内之内部條紋。此等資料 窗口亦描繪在第14B圖中。 光譜值之快速計算 就在高至4,000 Hz至6,000 Hz之範圍内的重複率下,就 每一脈波之頻寬做極快速之計算而言,一較佳之實施例, 係使用第15圖所指明之硬體。此硬體係包括:一微處理器 400,為公司在亞歷桑那州鳳凰城之摩托羅拉所供應的型號 MPC 823; —可程式化邏輯裝置402,為公司在加州聖荷西 市之Altera所供應的型號EP 6016QC240 ; —執行程序暨資 料記憶排組404; —可以表格形式暫時儲存發光二極體陣列 資料之特殊極快速RAM 406 ; —運作為一記憶體緩衝區之 第三4 X 1024圖素RAM記憶體排組408 ;和一類比數位轉換 (請先閲讀背面之注意事項再填寫本頁) …裝丨 .—訂— …線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 53 573389 A7 —------- 五、發明説明(5;1 ) "—''— - 器 410 〇 誠如美國專利編號第5,025,446號和美國專利編號第 5,978,394號中所解釋,—些先存技藝式|置,係被要求分 析大量代表其標準具184在一發光二極體陣列18〇上面所產 生之干涉條紋的PDA資料圖素強度資料,藉以決定其中心 線波長和頻寬。此係一相當耗時之程序,即使是使用一電 腦處理器,因為要找尋及說明波長和頻寬之每一計算有關 的標準具條紋,勢必要分析大約4〇〇個圖素強度值。本發明 之一較佳實施例,可大幅加速此一程序,其係藉由提供一 可與其用以計算波長資訊之處理器平行運作來找出該等重 要條紋的處理機。 此基本技術,係使用一可程式化邏輯裝置402,其可 於PDA圖素資料產生時,自此等圖素資料連續產生一條紋 資料表。此邏輯裝置402,亦可識別何組條紋資料,係代表 所關注之條紋資料。接著,當需要計算中心波長和頻寬時, 其微處理器僅僅是撿起該等來自所關注之識別圖素的資 料,以及計算其中心波長和頻寬所需之值。此程序可使微 處理器所需之計算時間,降低大約一 1 〇之因數。 一计算中心波長和頻寬之較佳程序中的特定步驟係 如下: 1)在PDA 180運作於2.5 MHz之時鐘信號下,此pda 180 係受到其處理器400之控制,在4,〇〇〇 Hz之掃描速率 下’收集來自圖素1至600之資料,以及在1〇〇 Hz之速 率下,讀取圖素1至1028。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐〉 54 f請先閲讀背面之注意事項再填寫本頁j573389 A7 _______B7_ V. Description of the invention (49) λ = (2.3pm / pixel) P + 191? 625 pm Among them, P = coarse adjustment of the center position of the image. Or you can add additional precision by adding a secondary term like '' + () p2 if you need to right. The measurement of the fine-tuning wavelength is shown in FIG. 14. About 95% of the light beam passing through the mirror 173 will be reflected away from the mirror 182, pass through the lens 183, and reach the astigmatism sheet at the input of an etalon assembly 184 (It is best to use the diffractive diffusing sheet as explained in the section entitled "Improved etalon" below.) The beam leaving the etalon assembly will be focused by a focal length of 458 within the etalon assembly. The 4 mm lens is focused and will produce some interference fringes on the middle and right side of its linear light emitting diode array 180 after reflecting off the two mirrors as shown in Figure 14. Its light splitting The meter must be able to measure its wavelength and bandwidth in real time. Because its laser repetition rate may be 4,000 Hz to 6,000 Hz, it is necessary to use some correct but not computationally intensive algorithms in order to be economical and compact. Process electronic circuits to achieve their desired performance. Therefore, their computational algorithms should preferably use integer math instead of floating point math, and their mathematical operations should be computationally efficient (do not use square root, sine ,logarithm Etc.) The specific details of the preferred algorithm used in this preferred embodiment_ will be explained. Figure 14D shows a curve with 5 peaks as shown, which represents its linear light emitting diode array One of the typical etalon stripe signals measured at 180. The height of its central peak is lower than that of the other. When it is not a standard paper standard _ A4 size __ 7 Gong Chu) " Π9 ~ *-(Please read first Note on the back, please fill out this page again) ', ^ Ti line 丨 573389 A7 B7 V. Description of the invention (when light waves with the same wavelength enter this etalon, the central peak will rise and fall' sometimes becomes Zero. This feature makes this central peak unsuitable for wavelength measurement. Other peaks will move toward or away from this central peak in response to changes in wavelength, so that the position of these peaks can be used to determine the wavelength, and they The width of the laser can measure the bandwidth of the laser. Figure 14D shows two areas marked as data windows. These data windows are positioned so that they are closest to the central peak of the stripe, which is usually used for analysis Yes. However When the wavelength changes so that the fringe moves too close to its central peak (which will cause distortion and errors), its first peak will be outside this window, but its second closest peak will be in this window And its software can control the processor in module 197 to use this second peak. Conversely, when the wavelength changes so that the current peak moves away from its central peak and out of the window, its software will jump To the internal fringes in its data window. These data windows are also depicted in Figure 14B. The fast calculation of the spectral value is based on the frequency of each pulse at a repetition rate in the range of up to 4,000 Hz to 6,000 Hz. For extremely fast calculations, a preferred embodiment uses the hardware indicated in Figure 15. This hardware system includes: a microprocessor 400, model MPC 823 supplied by the company's Motorola in Phoenix, Arizona;-a programmable logic device 402, supplied by the company's Altera in San Jose, California Model EP 6016QC240;-Executing program and data memory bank 404;-Special extremely fast RAM 406 that can temporarily store data of light emitting diode arrays in table form;-Third 4 X 1024 pixel RAM operating as a memory buffer Memory bank 408; and an analog digital conversion (please read the precautions on the back before filling this page)… install 丨 .—order—… line 丨 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ) 53 573389 A7 --------- V. Description of the invention (5; 1) " --''---Device 410 〇 As explained in US Patent No. 5,025,446 and US Patent No. 5,978,394, These pre-existing techniques are required to analyze a large number of PDA data pixel intensity data representing the interference fringes generated on a light-emitting diode array 180 on its etalon 184 to determine its centerline wavelength and frequency. width . This is a very time-consuming process, even if a computer processor is used, because to find and explain the etalon fringes associated with each calculation of wavelength and bandwidth, it is necessary to analyze about 400 pixel intensity values. A preferred embodiment of the present invention can greatly speed up this process by providing a processor that can operate in parallel with its processor for calculating wavelength information to find these important fringes. This basic technology uses a programmable logic device 402, which can continuously generate a stripe data table from the pixel data when the PDA pixel data is generated. This logic device 402 can also identify which set of stripe data is the stripe data of interest. Then, when it is necessary to calculate the center wavelength and bandwidth, its microprocessor simply picks up the information from the identification pixels of interest and calculates the values required for its center wavelength and bandwidth. This procedure can reduce the calculation time required by the microprocessor by a factor of approximately 10. The specific steps in a better procedure for calculating the center wavelength and bandwidth are as follows: 1) Under the clock signal of PDA 180 operating at 2.5 MHz, this pda 180 is controlled by its processor 400 at 4,00. Collect data from pixels 1 to 600 at a scan rate of Hz, and read pixels 1 to 1028 at a rate of 100 Hz. This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297mm) 54 f Please read the notes on the back before filling in this page j

573389 A7 _ B7_ 五、發明説明(52 ) 2) 其PDA 180所產生之類比圖素強度資料,將會自一些 類比強度值,被其類比數位轉換器41 〇,轉換成一些 數位8-位元值(0至255),以及此等數位資料,將會暫 時儲存在其RAM緩衝區408内,而成為一些表示其發 光二極體陣列180之每一圖素處的強度之位元值。 3) 其可程式化邏輯裝置402,可以一幾乎為即時之基 礎,連續地分析自其RAM緩衝區408流出之資料,藉 以找尋彼等條紋,可將所有資料儲存進其RAM記憶體 406内,可識別每一脈波有關之所有條紋,可就每一 脈波產生一條紋表,以及可將此等表儲存進其ram 406内,以及可識別每一脈波有關一最佳組之兩條 紋。其邏輯裝置402所使用之技術係如下: A) 其PLD 402將會分析每一行經其緩衝區4〇8之圖素 值,以便決定其是否超過一強度臨界值,同時可保 持追蹤其最小之圖素強度值。若該臨界值被超過, 此係一條紋峰值到來之表示值。其PLD將會識別其 超過臨界值之第一圖素,做為其”上昇緣,,圖素數, 以儲存該等領先此"上昇緣,,圖素之圖素的最小圖 素值。此圖素之強度值,係被確認為該條紋之“最 小值’’。 B) 其PLD 402接著會監測後繼圖素之強度值,以搜尋 該條紋之峰值。此在完成上係藉由保持追蹤其最高 之強度值,直至其強度低於其臨界值強度為止。 C) 當一具有一低於臨界值之值的圖素被發現到時,其 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) 55 (請先閲讀背面之注意事項再填寫本頁) *可— —線· 573389 A7 B7 五、發明説明(53 ) PLD將確認其為其之下降緣圖素數,以及儲存此最 大值。其PLD接著會藉由自其下降緣圖素數減去自 其上昇緣圖素數,來計算該條紋之“寬度”。 D)其上昇緣圖素數、最大條紋強度、最小條紋強度、 和該條紋之寬度等四個數值,係儲存在其R A Μ記憶 排組406之條紋節段的循環表内。其可就每一脈 波,儲存其代表多達15道條紋之資料,雖然大部份 之脈波,在上兩窗口内,僅會產生2至5道條紋。 Ε)其PLD 402亦被程式規劃,以便就每一脈波,確認 出相對於每一脈波之“最佳”兩道條紋。此在完成上 係藉由確認出其完全在0至199之窗口内的最後條 紋,和其完全在400至599之窗口内的第一條紋。 其在一脈波後就(1)收集其圖素資料及(2)形成此脈波 有關條紋之循環表所需要的總時間,係少於200微秒。此技 術可節省時間之主要優點在於,其對條紋之搜尋,係發生 於其條紋資料正被讀取出、數位化、及儲存之際。一特定 之脈波一旦有兩道最佳條紋被識別,其微處理器400,便會 自其RAM記憶體排組406,取得上兩條紋之區域内的原始 圖素資料,以及將會自此等資料計算出其頻寬和中心波 長。為進一步縮短計算時間,其微處理器400,可代以 Motorola and Texas Instruments(摩托羅拉和德州儀器)所製 類型(諸如Motorola chip DPS56303)之一快速數位信號處 理器(稱作種DSP)。此DPS可使位於其波長計處,以使其自 波長計傳遞至雷射主控制之唯一資料,係其光束控制所需 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 56 (請先閲讀背面之注意事項再填寫本頁) 訂— 573389 A7 B7 五、發明説明(54 之最終資料。此可容許使其計算時間,被大幅縮短少於謂 微秒。其計算係如下: 該等標準具條紋之典型形狀,係顯示在第14D圖中。 基於其PLD402先前之工作,其具有_在大_素18()處之 最大值的條紋,和其具有-在大約圖素彻處之最大值的條 紋,將會被其微處理器400確認出。其環繞此兩最大值之圖 素貝料,會被其微處理器4〇〇分析,以界定出該條紋之形狀 和位置。此在完成上係如下: A)其半最大值(半鬲)在決定上,係藉由自其條紋最大 值減去其條紋最小值,而將其差值除以2,以及將 此結果加至該條紋最小值。就上兩條紋之每一上昇 緣和每一下降緣,其具有超過上述半最大值之最接 近值和低於上述半最大值之最接近值的兩個圖素 將會被計异。其微處理器在每一情況中,接著將會 求出該兩圖素間之外插值,藉以界定出如第丨8B圖 中所示D1和D2之端點,而具有一 1/32圖素之精確 度。其循環條紋之内徑D1和外徑D2,將可由此等值 被決定出。 細調波長之計算 其細调波長之計真在完成上,係使用其粗調波長之測 量值,和該等D1和D2之測量值。 其有關波長之基本方程式為: λ =(2*n*d/m)cos(R/f) ⑴ 其中, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 57 (請先閲讀背面之注意事項再填寫本頁)573389 A7 _ B7_ V. Description of the invention (52) 2) The analog pixel intensity data generated by its PDA 180 will be converted from some analog intensity values to some digital 8-bit by its analog-to-digital converter 41 〇 The values (0 to 255), as well as these digital data, will be temporarily stored in its RAM buffer 408 and become some bit values indicating the intensity at each pixel of its light emitting diode array 180. 3) Its programmable logic device 402 can continuously analyze the data flowing from its RAM buffer 408 on an almost real-time basis, in order to find their stripes, and can store all data in its RAM memory 406, Can identify all stripes related to each pulse, can generate a fringe table for each pulse, and can store these tables in its ram 406, and can identify two stripes related to an optimal group for each pulse . The technology used by its logic device 402 is as follows: A) its PLD 402 will analyze the pixel value of each line passing through its buffer 408 in order to determine whether it exceeds a critical threshold, while keeping track of its minimum Pixel intensity value. If the critical value is exceeded, this is the indication of the arrival of a fringe peak. Its PLD will identify the first pixel that exceeds its critical value as its "rising edge", the number of pixels, to store the smallest pixel value of the pixel leading the "rising edge," the pixel. The intensity value of this pixel is confirmed as the "minimum value" of the stripe. B) The PLD 402 then monitors the intensity of subsequent pixels to search for the peak of the fringe. This is done by keeping track of its highest intensity value until its intensity is below its critical value. C) When a pixel with a value lower than the critical value is found, its paper size applies the Chinese National Standard (CNS) A4 specification (210X297). 55 (Please read the precautions on the back before filling in this Page) * Yes-Line · 573389 A7 B7 V. Description of Invention (53) The PLD will confirm its number of falling edge pixels and store this maximum value. Its PLD then calculates the "width" of the stripe by subtracting the number of pixels from its falling edge from the number of pixels from its falling edge. D) The four values of the number of rising edge pixels, the maximum fringe intensity, the minimum fringe intensity, and the width of the fringe are stored in the circular table of the striped segments of its RAM memory bank 406. It can store data representing up to 15 stripes for each pulse, although most pulses will only produce 2 to 5 stripes in the last two windows. E) The PLD 402 is also programmed to identify the "best" two stripes for each pulse with respect to each pulse. This is done by confirming that it is completely in the last stripe within the window of 0 to 199 and that it is completely in the first stripe within the window of 400 to 599. After a pulse wave, it (1) collects its pixel data and (2) the total time required to form a circular table of the pulse wave-related stripes is less than 200 microseconds. The main advantage of this technology in saving time is that its search for stripes occurs when its stripes are being read out, digitized, and stored. Once two optimal stripes of a particular pulse are identified, its microprocessor 400 will obtain the original pixel data in the upper two stripes from its RAM memory bank 406, and will And other data to calculate its bandwidth and center wavelength. To further reduce the calculation time, its microprocessor 400 can be replaced with a fast digital signal processor (called a DSP) of one of the types made by Motorola and Texas Instruments (such as Motorola chip DPS56303). This DPS can be located at its wavelength meter so that it transmits the only information from the wavelength meter to the laser master control, which is required for its beam control. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 56 (Please read the precautions on the back before filling out this page) Order — 573389 A7 B7 V. The final description of the invention (54. This allows the calculation time to be greatly shortened to less than microseconds. The calculation is as follows: The typical shapes of these etalon stripes are shown in Figure 14D. Based on its previous work on PLD402, it has stripes with a maximum value at prime 18 (), and it has-at approximately The stripe at the maximum value will be confirmed by its microprocessor 400. The pixel material surrounding the two maximum values will be analyzed by its microprocessor 400 to define the shape and position of the stripe The completion of this is as follows: A) The decision of its half-maximum value (half unitary value) is to divide its difference value by 2 by subtracting its minimum value from its maximum value, and the result. Add to this stripe minimum. For each rising edge and each falling edge of the two upper stripes, the two pixels having the closest value exceeding the half-maximum value and the closest value below the half-maximum value will be counted differently. In each case, its microprocessor will then find the extrapolation between the two pixels to define the endpoints of D1 and D2 as shown in Figure 8B, and have a 1/32 pixel. The accuracy. The inner diameter D1 and outer diameter D2 of the cyclic stripe can be determined from this equivalent value. Calculation of the fine-tuning wavelength The calculation of the fine-tuning wavelength is really completed by using the measured values of the coarse-tuning wavelength and the measured values of these D1 and D2. The basic equation of its wavelength is: λ = (2 * n * d / m) cos (R / f) ⑴ Among which, the paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 57 (Please read first (Notes on the back then fill out this page)

.、可I ----線丨 573389 A7 _^_B7_ 五、發明説明(55 ) 入為波長,以微微米為單位, η為其標準具之内部折射率指數,約為1.0003, d為其標準具之間隔,就KrF雷射大約為1542 /zm,以 及就ArF雷射大約為934 //m,受控於+/-l#m之範圍 内, m係價數,其條紋峰值處之波長的整數,大約為12440, R為該條紋之半徑,130至280個PDA圖素,一圖素為 25微米, f為自其透鏡至其PDA平面之焦距。 展開cos項及捨棄彼等小至可被忽略之高次項將會產 生: λ =(2*n*d/m)[l-(l/2)(R/f)2] (2) 以直徑D=2*R重寫此方程式可得: λ =(2*n*d/m)[l-(l/8)(D/f)2] (3) 其波長計之主要任務,為自D計算出λ。此將要求f、 n、d、和m為已知。由於η和d兩者為其標準具之固有值, 吾等可將彼等合併成一名為ND之單一校正常數。吾等將f 視為另一名為FD而以圖素為單位之校正常數,以與D之單 位相匹配,而得一純數比率。 其整數價數m,係依據波長和吾等所選擇之條紋對而 變化。m在決定上係使用其粗調條紋之波長,其就此目地 係具足夠之正確性。 此等方程式有關之一些美好事件是,其所有大數目均 為正值。其WCM之微控制器,可在維持幾乎32位元之精密 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) · 58 · (請先閲讀背面之注意事項再填寫本頁) ——裝- ----線丨 573389 A7 _____B7_ 五、發明説明(56 ) 度下來計算它。吾等稱方括號内之項為FRAC。 FRAC=[1-(1/8)(D/FD)2] (4) 内部地,FRAC係表示為一無符號之32-位元值,而使 其小數點在最高有效位元之左側。FRAC總係略小於1,以 致吾專在此得到最大之精密度。就範圍在{560〜260}圖素 之D而言,FRAC之範圍係自[1-120E-6]至[1-25E-6]。 當進入其ND校正時,其波長計將會計算一名為 2ND=2*ND之内部無符號64-位元值,其内部波長單位為毫 微微米(fm)= 10 15米=0.001 pm。内部地,就細調波長而言, 吾等係將波長又表示為FWL,亦以fm為單位。以此等變數 重寫該方程式: FWL=FRAC*2ND/m ⑺ 此算術式係處理FRAC中小數點之移位,而產生以fm 為單位之FWL。吾等將藉由改組該方程式及插入其亦以fm 為單位名為CWL之已知粗調調波長來之解: m=最接近之整數(FRAC*2ND/CWL) (6) 取用最接近之整數,係等於在舊計劃中加入或減去 FSR,直至對粗調波長最接近之細調波長達到為止。藉由 解方程式(4)接著方程式(6)接著方程式(5),將可計算出其 波長。吾等分別就其内徑和外徑計算WL。其平均值即其線 中心波長,其差值即其線寬。 頻寬計算 其雷射之頻寬係計算為(λ 2-又丨)/2。有一固定校正因 數,被應用來考慮到其標準具峰值之内在寬度,而加入至 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) -59 - (請先閲讀背面之注意事項再填寫本頁) 、町| ----線· 573389 A7 -" "— ------_____ 五、發明説明(57 ) 其真實雷射頻寬。數學地,一反褶積演算法,係其用以自 其測知之寬度移除此標準具内在寬度的體系,但此計算係 過於繁複,以致其係減除一固定之校正值」λ ε,其可提 供足夠之準確度。所以,其頻寬為: ^ λ =[(Ό2^όυ)/2]^ χ e J λ e係依據其標準具之規範和真實雷射之頻寬兩 者而定。其就本說明書所說明之應用而言,典型地係位於 0.1-1 pm之範圍内。 較佳之頻寬測量 則節中所決定之頻寬值」λ,係表示所謂M全寬半高” 或FWHM之頻寬。其係表示其雷射光束頻譜(亦即,強度為 波長之一函數)在其半最大強度處之寬度。此係當前之頻寬 值,其典型地係就積體電路平版印刷術所用之雷射來做監 控。若其頻譜之精確形狀係已知(舉例而言,若其已知為高 氏分佈),此等FWHM值,便可被用來決定此雷射光束之整 個頻譜(亦即,此雷射光束在其光束範圍内之所有波長下的 強度)。然而,一般而言,其頻譜之正確形狀,並無法精確 得知,以致使用此FWHM值來表示其雷射頻譜,將存在某 種相相關聯之不確定性。另一種用以監控其雷射光束頻譜 之解決方案是,試圖測量所謂之95%積分值(稱作j_95)。然 而,此亦會涉及到不確定性,因為其頻譜之”翼部”中的低 強度值之測量,將會因儀器雜訊而很難被精確測量。而且, 一良好195測量,將需要一些精密度極高之標準具。此等精 密度極高之標準具在堅固耐用上,典型地係不足以供一生 丨一 -- . ,_________ — _ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) " 了 60 : (請先閲讀背面之注意事項再填寫本頁) 訂— -線:·- 573389 A7 B7 五、發明説明(58 產線雷射用。 較佳之他型技術,係善用上文所說明之極快速偵測 器和處理H和儲存集箱。此等技術可收集及分析大量之資 料,以及認定該雷射係運作於一脈波串模態中,舉例而言, 一 0.2秒時寬内2000個脈波之脈波串,而使此等脈波串以 〇·2秒之中斷時間相分隔。一類似pDA4〇2等邏輯裝置,可 在每一脈波期間,將該脈波串中之每一脈波有關的所有條 紋資料,儲存進其儲存裝置4〇4中。緊接該脈波串之後(在 其〇·2秒中斷時間期間),其處理器400,將會計算每一脈波 有關之頻譜,以及接著計算一或多之平均頻譜值(舉例而 言,十一個平均值,亦即,該等脈波之第一、第二至第十 個百分比之平均值;加上其總平均頻譜)。其計算頻譜之演 算法,最好應就各種來源之雜訊做校正,尤其是在其頻譜 之翼部中’以及亦應減除任何來自相鄰條紋之強度分佈。 其頻譜可被界定為一波長函數之積分,或者其可被界定為 一系列類似10%1、20%1、…、90%1等積分,或者由該等資 料’其處理器可被程式規劃來計算及報告更多類似FWHM 值和95°/。1等熟悉之頻譜值。其處理器可被程式規劃來計 算、報告、及/或儲存每一脈波串有關之平均值,以及可 定期報告脈波串期間就所選定窗口尺度之平均值。 增強之照度 當重複率自4,000 Hz之範圍,增加至10,000 Hz之範圍 時’其波長計内之光學組件,將會暴露於大量增加之紫外 輻射線中。為抗衡此潛在之問題,吾等申請人業已對該波 61 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 ---^____ B7_ 五、發明説明(59 ) 長計做了一些改良,其可使其每脈波之曝光率,降低多達 —28之因數。此等改良之細節係說明於最接在2002年六月 W曰提出申請之美國專利編號題名為“Gas Discharge Ultraviolet Wavemeter with Enhanced Illumination,”(具增 強照度之氣體放電紫外線波長計)中,其係藉由參照而合併 進此說明書中。第141圖係其具有增強照度之修飾波長的一 個繪圖。其最重要之新特徵,為一繞射性散光片181D和一 由透鏡181A和181C所形成之縮影望遠鏡,後者可使光束之 截面收縮,以使其分光器170兩側之反射所產生的兩條分開 的取樣光束,在其繞射散光片181D之輸出表面處被合併。 其透鏡181E會使此繞射散光片之輸出表面,成像在其傳統 式散光片181G上面,以及其合併之兩次擴散光束,有一極 小部分會被其狹缝181H選擇,而被其標準具184,轉換成 一些頻譜條紋,彼等復會被其透鏡181L成像至其發光二極 體陣列180上面。其分光器181F,可將來自其透鏡181E之 擴散光束,分離成兩部分,其第一部分如上文所述,將會 照射其標準具184,以及其第二部分,將會被其散光片181 擴散,以及此兩次擴散之光束,係被用作一校正光束,藉 以基於其蒸汽隔間198中之某種金屬蒸汽(就ArF而言為 鉑,以及就KrF而言為鐵),來校準其波長計。 脈波能量和波長之回授控制 基於每一脈波之脈波能量如上文所述之測量’彼等後 繼脈波之脈波能量可加以控制,以維持所希望之脈波能 量,加上某一特定數目之脈波所希望之總積分劑量,彼等 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 62 (請先閲讀背面之注意事項再填寫本頁)May, I ---- line 丨 573389 A7 _ ^ _ B7_ V. Description of the invention (55) The input is the wavelength, in micrometers, η is the internal refractive index of the etalon, about 1.0003, and d is The interval of the etalon is about 1542 / zm for KrF laser and about 934 // m for ArF laser. It is controlled within the range of +/- l # m, where m is the valence and the peak of the fringe The integer of the wavelength is approximately 12440, R is the radius of the fringe, 130 to 280 PDA pixels, one pixel is 25 microns, and f is the focal length from its lens to the PDA plane. Expanding the cos term and discarding their higher order terms that are small enough to be ignored will yield: λ = (2 * n * d / m) [l- (l / 2) (R / f) 2] (2) by diameter D = 2 * R rewrite this equation to get: λ = (2 * n * d / m) [l- (l / 8) (D / f) 2] (3) The main task of its wavelength meter is D calculates λ. This would require f, n, d, and m to be known. Since both η and d are intrinsic values of their etalons, we can combine them into a single correction constant that is ND. We regard f as another correction constant named FD with the unit of pixel to match the unit of D to get a pure number ratio. Its integer valence m varies depending on the wavelength and the stripe pair we have chosen. m is used to determine the wavelength of its coarse-adjusted fringes, which is sufficiently accurate for this purpose. Some good things about these equations are that all their large numbers are positive. Its WCM microcontroller can maintain almost 32-bit precision. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). · 58 · (Please read the precautions on the back before filling this page) — —Equipment- ---- line 丨 573389 A7 _____B7_ V. Description of the invention (56) Calculate it. We call the items in square brackets FRAC. FRAC = [1- (1/8) (D / FD) 2] (4) Internally, FRAC is represented as an unsigned 32-bit value with its decimal point to the left of the most significant bit. FRAC is always less than 1, so that we get the most precision here. For D in the range of {560 ~ 260} pixels, the range of FRAC is from [1-120E-6] to [1-25E-6]. When entering its ND correction, its wavelength meter will calculate an internal unsigned 64-bit value of 2ND = 2 * ND, and its internal wavelength unit is nanometer (fm) = 10 15 meters = 0.001 pm. Internally, in terms of fine-tuning the wavelength, we have expressed the wavelength as FWL again, and the unit is fm. Rewrite the equation with these variables: FWL = FRAC * 2ND / m ⑺ This arithmetic formula deals with the shift of the decimal point in FRAC, and produces FWL in units of fm. We will solve the problem by shuffling the equation and inserting its known coarse tuning wavelength, which is also named CWL in fm: m = closest integer (FRAC * 2ND / CWL) (6) take the closest An integer equal to adding or subtracting FSR from the old plan until the fine tuning wavelength closest to the coarse tuning wavelength is reached. By solving equation (4) followed by equation (6) followed by equation (5), the wavelength can be calculated. We calculate WL for its inner and outer diameters, respectively. Its average value is its line center wavelength, and its difference is its line width. Bandwidth calculation The bandwidth of the laser is calculated as (λ 2- and 丨) / 2. There is a fixed correction factor, which is applied to take into account the intrinsic width of the peak of the etalon, and it is added to this paper standard to apply Chinese National Standard (CNS) Α4 specification (210X297 mm) -59-(Please read the precautions on the back before (Fill in this page), machi | ---- line · 573389 A7-" "-------_____ V. Description of the invention (57) Its true thunder band width. Mathematically, a deconvolution algorithm is a system used to remove the intrinsic width of the etalon from its measured width, but the calculation is too complicated, so that it subtracts a fixed correction value "λ ε, It can provide sufficient accuracy. Therefore, its bandwidth is: ^ λ = [(Ό2 ^ όυ) / 2] ^ χ e J λ e depends on both the standard of its etalon and the bandwidth of the real laser. For the application described in this specification, it is typically in the range of 0.1-1 pm. A better bandwidth measurement is determined by the bandwidth value λ in the section, which refers to the so-called M full-width half-height, or FWHM bandwidth. It refers to the laser beam spectrum (that is, the intensity is a function of wavelength) ) At its half-maximum intensity. This is the current bandwidth value, which is typically monitored by lasers used in integrated circuit lithography. If the precise shape of its spectrum is known (for example If it is known as Gaussian distribution), these FWHM values can be used to determine the entire spectrum of the laser beam (that is, the intensity of the laser beam at all wavelengths within its beam range). However, in general, the correct shape of its spectrum cannot be accurately known, so that using this FWHM value to represent its laser spectrum will have some associated uncertainty. Another is used to monitor its laser The solution to the beam spectrum is to try to measure the so-called 95% integration value (called j_95). However, this also involves uncertainty, because the measurement of low intensity values in the "wing" of its spectrum will Difficult to be accurately measured due to instrument noise Moreover, a good 195 measurement will require some extremely precise etalons. These extremely precise etalons are sturdy and durable, typically not enough for a lifetime 丨 one-., _________ — _ paper Standards are applicable to China National Standard (CNS) A4 specifications (210X297 mm) " 60: (Please read the precautions on the back before filling this page) Order--line: ·-573389 A7 B7 V. Description of the invention (58 products For line lasers. The better alternative technology is to make good use of the extremely fast detectors and processing H and storage headers described above. These technologies can collect and analyze a large amount of data and identify the operation of the laser system. In a pulse train mode, for example, a pulse train of 2000 pulse waves in a 0.2 second time width, and these pulse trains are separated by an interruption time of 0.2 seconds. A similar to pDA4〇 Second-level logic device can store all the fringe data related to each pulse wave in the pulse wave train in its storage device 4 during each pulse wave. Immediately after the pulse wave train (in its 〇 2 seconds interrupt time), its processor 400 will calculate every Pulse wave related spectrum, and then calculate one or more average spectrum values (for example, eleven averages, that is, the average of the first, second to tenth percentages of the pulses; plus The total average spectrum). The algorithm used to calculate the spectrum should preferably be corrected for noise from various sources, especially in the wings of its spectrum, and any intensity distribution from adjacent stripes should also be subtracted. Its spectrum can be defined as an integral of a wavelength function, or it can be defined as a series of integrals such as 10% 1, 20% 1, ..., 90% 1, etc., or from this data, its processor can be programmed To calculate and report more familiar frequency values such as FWHM and 95 ° /. 1. Its processor can be programmed to calculate, report, and / or store the average value associated with each pulse train, and can be periodically Reports the average of the pulse train period over the selected window scale. Enhanced Illumination When the repetition rate is increased from the range of 4,000 Hz to the range of 10,000 Hz, the optical components in its wavelength meter will be exposed to a large increase in ultraviolet radiation. To counteract this potential problem, our applicants have already responded to this wave 61 (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 573389 A7- -^ ____ B7_ 5. Description of the Invention (59) The long meter has been improved, which can reduce the exposure rate of each pulse by as much as a factor of -28. The details of these improvements are described in the U.S. patent number entitled "Gas Discharge Ultraviolet Wavemeter with Enhanced Illumination," which was filed most recently in June 2002. This reference is incorporated by reference. Figure 141 is a plot of modified wavelengths with enhanced illumination. The most important new feature is a diffractive astigmatism sheet 181D and a miniature telescope formed by lenses 181A and 181C. The latter can shrink the cross section of the light beam so that the two reflections produced by the two sides of the beam splitter 170 are The divided sampling beams are combined at the output surface of its diffractive diffusing sheet 181D. Its lens 181E causes the output surface of this diffractive astigmatism sheet to be imaged on its traditional astigmatism sheet 181G, and its combined two diffused beams. A very small part will be selected by its slit 181H and its etalon 184 , Converted into some spectral fringes, and they are imaged on the light emitting diode array 180 by their lens 181L. Its beam splitter 181F can split the diffused beam from its lens 181E into two parts. The first part, as described above, will illuminate its etalon 184, and the second part, will be diffused by its astigmatic sheet 181. , And this two-diffusing beam is used as a correction beam to calibrate it based on some metal vapor in its vapor compartment 198 (platinum in the case of ArF and iron in the case of KrF). Wavelength meter. Pulse energy and wavelength feedback control is based on the measurement of the pulse energy of each pulse as described above. The pulse energy of their subsequent pulses can be controlled to maintain the desired pulse energy, plus a certain The desired total integrated dose for a specific number of pulses, the paper size of which applies the Chinese National Standard (CNS) A4 (210X297 mm) 62 (Please read the precautions on the back before filling this page)

573389 A7 B7 五、發明説明(6〇 ) 全係說明在美國專利編號第6,005,879號,“Pulse Energy Control for Excimer Laser”(激態分子雷射有關之脈波能量 控制),其係藉由參照而合併進此說明書中。 其雷射之波長,可使用彼等測量之波長值和一些其先 存技藝式中已知類似美國專利編號第5,978,394號, “Wavelength System for an Excimer Laser”(激態分子雷射 有關之波長系統)中(其亦係藉由參照而合併進此說明書中) 所說明之技術等技術,在一回授組態中加以控制。吾等申 請人最近已開發出一些有關波長調制之技術,其係利用一 壓電驅動器,來提供面鏡調制之極快速運動。某些此等技 術係說明在2000年六月30日提出申請之美國專利編號第 608,543號,“Bandwidth Control Technique for a Laser”(雷 射有關之頻寬控制技術),其係藉由參照而合併進此說明書 中。第16A和16B圖係摘錄自該申請案,以及係顯示此一技 術之主要元件。有一壓電堆被用來做極快速之面鏡調整, 以及一些較大且較慢之調整,係由一可操作一槓桿臂之先 存技藝式步進馬達來提供。其壓電管組可調整其槓桿臂之 支點的位置。 具有組合PZT-步進馬達驅動式調制面鏡之新LNP 壓電驅動器有關之明細設計 第16圖係一可顯示上述雷射系統之特徵的方塊圖,其 對上述輸出雷射光束之波長和脈波能量的控制係很重要。 所顯示係線窄化模組15K,其係由一三稜鏡光束擴展器、 一調制面鏡14、和一光栅所構成。其波長計1〇4,可監控其 63 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 發明説明(61 ) 輸出光束之波長’以及可提供一回授信號給其LNP處理器 106,其可如下文所述,藉由一步進馬達和一 ρζτ管組之運 作’來控制其調制面鏡14之位置。彼等運作波長可由其雷 射控制器102來加以選擇。脈波能量亦可在其波長計1〇4中 被測量,後者可提供一供其控制器102使用之信號,藉以如 上文所述,在一回授組態中控制脈波能量。第16A圖係一 可顯示PZT堆80、步進馬達82、面鏡14、和面鏡座%之方 塊圖。 第16B1圖係一可顯示本發明之一較佳實施例的明細 特徵之繪圖。其面鏡14之位置中的大改變,係藉由一步進 馬達透過一 26.5比1之槓桿臂84,來加以產生。在此一情況 中,其壓電驅動器80之端部處的金鋼石墊η在設置上,係 使與其相杯臂84之支點處的球形刀具球相接觸。其槓桿臂 84之頂部與面鏡座86間的接觸,在其槓桿臂上面,係設置 有一圓柱形接合銷臂,以及如85處所示在其面鏡座上面, 係女裝有四個球形滾珠軸承(僅顯示出其中之兩個)。其壓 電驅動器80,係以一壓電座80A安裝在其LNP上面,以及 該步進馬達係以一步進馬達框架82A,安裝至其框架上 面。其面鏡14係使用三個鋁製球體(其中僅有一個顯示在第 16B1圖内),以一個三點座安裝在其面鏡座%内。有三個彈 簧14A,可施加壓縮力,使該面鏡保持壓制至該等球體。 第16B2圖係一與第16B1圖中所示者略有不同之較佳 貫施例。此實施例係包括一伸縮囊87,以使其壓電驅動器 與其LNP内之環境相隔離。此隔離作用可防止其壓電元件 573389 A7 _ _B7 ____ 五、發明説明(62 ) 受到UV之損害,以及可避免其壓電材料逸出之氣體所造成 的可能污染。亦可見第19D圖和下文所附有關一可提供 LNP大幅改良式密封之他型LNP設計的主文。 LNP淨化技術 淨化線窄化組件係知名的;然而’其先存技藝係教 導,不使其淨化氣流直接流至其光栅表面上’以致其淨化 氣流典型地係經由一位於一些在其光柵表面背後之位置處 的埠來提供。然而’吾等申請人業已發現到’在極高之重 複率下,在其光柵表面上’將會發展出一層熱氣體(氣氣)’ 而使其波長失真。此一失真至少可藉由上述之主動波長控 制,部份地加以修正。另一解決方案是,如第17圖中所示 地,淨化其光柵之表面。在第17圖中,一些在長10吋直徑 3/8吋之淨化管61的頂部中之小孔(1 mm成1/4吋之間隔)’ 可提供上述之淨化氣流。此淨化氣體’如下節中之說明’ 可為來自一純氮供應器之氮氣。而且,在一較佳之實施例 中,此LNP係以氦氣來淨化。其他之技術係顯示在第17 A、 17B、和17C圖中。 一些可用以控制波長和頻寬之特定技術,係說明於以 下藉由參照而合併進此說明書中之專利申請案中:2001年 二月27日提出申請之美國專利編號第〇9/794,782號題名為 ’’Laser Wavelength Control With Piezoelectric Driver”(以壓 電驅動器做雷射波長控制);2001年二月27曰提出申請之美 國專利編號第1〇/〇27,210號題名為“Laser Wavelength Control With Piezoelectric Driver”(以壓電驅動器做雷射波 65 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 573389 五、發明説明(63 ) 長控制);2001年十二月21日提出中請之美國專利編號第 觸36,奶號題名為“Laser Spec⑽如細响Μ573389 A7 B7 V. Description of the invention (60) The whole description is in US Patent No. 6,005,879, "Pulse Energy Control for Excimer Laser" (Pulse Energy Control for Excimer Laser), which is made by reference. Incorporated into this manual. The wavelength of the laser can be measured using their measured wavelengths and some of their pre-existing techniques similar to US Patent No. 5,978,394, "Wavelength System for an Excimer Laser" (wavelength system related to excimer lasers) ) (Which is also incorporated into this specification by reference) and other technologies are controlled in a feedback configuration. Our applicants have recently developed a number of wavelength modulation techniques that use a piezoelectric actuator to provide extremely fast motion of mirror modulation. Some of these technologies are US Patent No. 608,543 filed on June 30, 2000, "Bandwidth Control Technique for a Laser", which is incorporated by reference Into this manual. Figures 16A and 16B are excerpts from the application and show the main elements of this technology. A piezoelectric stack is used for extremely fast mirror adjustment, and some larger and slower adjustments are provided by a pre-existing state-of-the-art stepper motor that operates a lever arm. Its piezoelectric tube group can adjust the position of the fulcrum of its lever arm. Detailed design related to the new LNP piezoelectric driver with a combined PZT-stepper motor-driven modulation mirror. Figure 16 is a block diagram showing the characteristics of the laser system described above. The control system of wave energy is important. The shown line narrowing module 15K is composed of a three chirped beam expander, a modulation mirror 14, and a grating. Its wavelength meter 104 can monitor its 63 (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Invention description (61) Wavelength of the output beam 'And it can provide a feedback signal to its LNP processor 106, which can control the position of its modulating mirror 14 by the operation of a stepping motor and a ρζτ tube set as described below. Their operating wavelengths can be selected by their laser controller 102. Pulse wave energy can also be measured in its wavelength meter 104, which can provide a signal for use by its controller 102 to control the pulse wave energy in a feedback configuration as described above. Fig. 16A is a block diagram showing the PZT stack 80, the stepping motor 82, the mirror 14, and the mirror base%. Figure 16B1 is a drawing showing the detailed features of a preferred embodiment of the present invention. The large change in the position of the face mirror 14 is produced by a stepping motor through a 26.5 to 1 lever arm 84. In this case, the diamond pad η at the end of the piezoelectric actuator 80 is arranged so as to contact the spherical cutter ball at the fulcrum of the phase cup arm 84 thereof. The contact between the top of the lever arm 84 and the mirror base 86 is provided on the lever arm with a cylindrical engaging pin arm, and as shown at 85 on the mirror base, the women's wear has four balls Ball bearings (only two of them are shown). The piezoelectric driver 80 is mounted on the LNP with a piezoelectric seat 80A, and the stepping motor is mounted on the frame with a stepping motor frame 82A. The mirror 14 uses three aluminum spheres (only one of which is shown in Figure 16B1), and is mounted in a mirror base% with a three-point mount. There are three springs 14A, which can apply a compressive force to keep the mirror pressed to the spheres. Fig. 16B2 is a preferred embodiment which is slightly different from that shown in Fig. 16B1. This embodiment includes a bellows 87 to isolate its piezoelectric actuator from the environment within its LNP. This isolation can prevent its piezoelectric element 573389 A7 _ _B7 ____ V. Description of the Invention (62) UV damage and the possible pollution caused by the gas escaping from its piezoelectric material. See also Figure 19D and the main article attached below for an alternative LNP design that provides a significantly improved LNP seal. LNP purification technology purification line narrowing components are well-known; however, 'its predecessor technology teaches that its purification airflow does not flow directly onto its grating surface' so that its purification airflow is typically passed through some behind its grating surface The port at the location is provided. However, our applicants have discovered that, at extremely high repetition rates, a layer of hot gas (gas) will develop on its grating surface and its wavelength will be distorted. This distortion can be at least partially corrected by the active wavelength control described above. Another solution is to purify the surface of the grating as shown in FIG. 17. In Fig. 17, some small holes (1 mm to 1/4 inch interval) in the top of a 10-inch-long 3 / 8-inch diameter purification pipe 61 can provide the above-mentioned purification airflow. This purge gas ' as described in the following section ' may be nitrogen from a pure nitrogen supplier. Moreover, in a preferred embodiment, the LNP is purified with helium. Other technologies are shown in Figures 17 A, 17B, and 17C. Some specific techniques that can be used to control wavelength and bandwidth are described in the following patent applications incorporated by reference into this specification: US Patent No. 09 / 794,782, filed on February 27, 2001 "Laser Wavelength Control With Piezoelectric Driver"; US Patent No. 10 / 〇27,210 filed on February 27, 2001, entitled "Laser Wavelength Control With Piezoelectric Driver" "(Plasma driver is used to make laser wave 65 (please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 public love) 573389 5. Description of invention (63) long Control); US Patent No. 36, filed on December 21, 2001, titled "Laser Spec⑽ 如 如 响 M"

Uthographic Process”(平版印刷術程序有關之雷射頻譜工 程技術)。 LNP壓力變化有關之補償 在極高之重複率和脈波串模態之運作下,該LNP在晶 圓照射期間,將會遭受大量加熱,以及在其他周期期間, 將^:乎不被加熱。此將會造成就仰淨化氣體巾之氣壓變 化,其將會影嚮到其波長。吾等申請人業已決定出,每ι〇 托之氣壓變化,大約會有丨pm之波長變化。波長中之變化, 典型地可在雷射運作期間,以上文所說明之波長回授控 制,極迅速地加以校正。然而,當雷射不在運作時,以及 於波長正在最快速變化時緊接高重複運作期間,則並無回 授。 此問題之一較佳解決方案是,以淨化氣體略使該LNp 加壓(諸如1大氣壓之表計壓力),藉以監控其壓力,以及修 正無運作期間之氣壓變化。第16F圖係單獨顯示它。其lnp 淨化氣體(在此一情況中為NO之壓力,係受到其壓力計2〇〇 之監控。在任何超過一類似當雷射未被點火時之5秒等特定 時間的期間,其控制器202,可指示其調制控制2〇4,使如 16B2圖所示,調整其PZT80和/或步進馬達82之位置,藉 以定位其調制面鏡14位置,而對氣壓變化做補償。此補償 作用係依照: 」λ (pm)=(P-P0)a, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 :線丨 573389 A7 __B7 五、發明説明(64 其中: P=氣壓 P〇=點火停止前之氣屋 a=壓力係數 =5 λ/δ ?Uthographic Process ”(laser spectrum engineering technology related to lithography process). Compensation related to pressure change of LNP Under the operation of extremely high repetition rate and pulse train mode, the LNP will suffer during wafer irradiation A large amount of heating, and during other periods, will not be heated. This will cause the pressure change of the purified gas towel, which will affect its wavelength. Our applicants have decided that every The change in the pressure of the bracket will have a wavelength change of about pm. Typically, the change in the wavelength can be corrected very quickly during the laser operation, the wavelength feedback control described above. However, when the laser is not in There is no feedback during operation, and immediately after the highly repetitive operation when the wavelength is changing most rapidly. One of the better solutions to this problem is to pressurize the LNp slightly with a purge gas (such as a meter with 1 atmosphere pressure) Pressure) in order to monitor its pressure and correct the change in air pressure during non-operation. Figure 16F shows it separately. Its lnp purification gas (NO pressure in this case is subject to Its pressure gauge is monitored by 200. In any period exceeding a specific time such as 5 seconds when the laser is not ignited, its controller 202 can instruct its modulation control to 204, as shown in Figure 16B2 , Adjust the position of its PZT80 and / or stepping motor 82, so as to position the position of its modulating mirror 14 to compensate for the change in air pressure. This compensation is based on: "λ (pm) = (P-P0) a, this The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Order: Line 丨 573389 A7 __B7 V. Description of the invention (64 of which: P = Air pressure P〇 = Gas house before ignition stop a = pressure coefficient = 5 λ / δ?

Λ /Λ X =pm/torr@ λ =248 nm η=淨化氣體之折射指數 =就氮氣而言為1.0003 此λ係在中斷期間應用至(加上)任何其他適當調制 之上,藉以舉例而言,補償一些類似熱漂移]1>^組件、或 預驅動指令、或開路波長變化等事件。 雷射淨化系統 本發明此第一實施例,係包括一超純ν2淨化系統,其 可提供極大之改良性能,以及可大幅增加其組件之壽命期。 第19圖係一可顯示本發明之第一實施例的重要特徵 之方塊圖。其在本系統之此一實施例中被氮氣淨化的五個 激態分子雷射組件是· LNP 2Ρ、一些安裝在雷射放電室6ρ 上面之高電壓組件4Ρ、一使此等高電壓組件4Ρ與上游脈波 功率組件10Ρ相連接之高電壓電纜8Ρ、一輸出耦合器12ρ、 和一波長計14Ρ。每一組件2Ρ、4Ρ、8Ρ、12Ρ、和14Ρ,係 裝在其密封之容器或隔間内,彼等各僅具有兩個埠,一 進氣埠和一A排氣埠。一通常為一積體電路製造廠處之大 A槽(典型地維持在液悲氣溫度下)Ν2來源16Ρ,但係可能為 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 67 (請先閲讀背面之注意事項再填寫本頁) -裝丨 訂- :線- 573389 A7 —----^___ 五、發明説明(65 ) 一相當小之沁瓶。此沁源氣體係自其^源丨紐流出,係流 進其N2淨化模fel7P内,以及係經過其&過滤器18p,而至 其内含流量控制閥之分配面板20P,藉以控制其至該等被 淨化之組件的峨流。關於每一組件,此淨化氣流將向後 導引至其模組17P,而至一流量監控單元22p,其中,自每 一淨化單元返回之流量,將會受到監控,以及在其受監控 之流量小於一預定值的情況中,啟動一警報(未示出)。 第19 A圖係一可顯示此實施例之特定組件之線圖,其 係包括某些額外並非與本發明之淨化特徵特別相關的N2 特徵。 N2過濾器 本發明之一重要特徵是,將其A過濾器18納入。過 去彼專有關積體電路平版印刷術之激態分子雷射的製造 商相信,N2淨化氣體有關之過濾器並非必要,因為市售N2 有關之A氣體規範,幾乎總能足夠地良好,以致其符合規 範之氣體係夠乾淨。然而,吾等申請人業已發現到,有時 其來源氣體可能會在規範外,或者其通向淨化系統之乂管 線,可能會含有污染物。而且,彼等管線在維修或運作程 序期間,可能會受到污染。吾等申請人業已決定,該過濾 器之費用,係預防極低或然率之污染所致損壞的極佳保險。 其一較佳之N2過濾器,為公司在加州聖地牙哥市之 Aeronex所供應的]^0(^1 5〇〇κ惰性氣體淨化器。此過濾器 可移除Η20、〇2、C0、c〇2、&、和非甲烷烴,而達至次 於十億分之幾的位準。其可移除99 9999999%所有〇 〇〇3微 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公爱) -68Λ / Λ X = pm / torr @ λ = 248 nm η = refractive index of purified gas = 1.0003 for nitrogen This λ is applied to (plus) any other appropriate modulation during the interruption period, for example Compensate for some events such as thermal drift] 1 > ^ components, or pre-drive instructions, or open-circuit wavelength changes. Laser purification system This first embodiment of the present invention includes an ultra-pure ν2 purification system, which can provide greatly improved performance and greatly increase the life of its components. Fig. 19 is a block diagram showing important features of the first embodiment of the present invention. The five excimer laser components purged with nitrogen in this embodiment of the system are: LNP 2P, some high-voltage components 4P installed above the laser discharge chamber 6ρ, and one such high-voltage components 4P A high-voltage cable 8P, an output coupler 12ρ, and a wavelength meter 14P connected to the upstream pulse wave power module 10P. Each module 2P, 4P, 8P, 12P, and 14P is installed in its sealed container or compartment, and each of them has only two ports, an intake port and an A exhaust port. One is usually a large A slot at a integrated circuit manufacturing plant (typically maintained at the temperature of the liquid gas). The source of N2 is 16P, but it may be a Chinese standard (CNS) A4 specification (210X297 mm) for this paper size. 67 (Please read the precautions on the back before filling this page) -Binding 丨 Binding-: Line- 573389 A7 —---- ^ ___ V. Description of the Invention (65) A rather small Qin bottle. This Qinyuan gas system flows out from its source, flows into its N2 purification mold, fel7P, and passes through its & filter 18p, to its distribution panel 20P, which contains a flow control valve, to control it to The stream of cleaned components. Regarding each component, this purge air will be directed backwards to its module 17P, and to a flow monitoring unit 22p, where the return flow from each purification unit will be monitored, and when the monitored flow is In the case of a predetermined value, an alarm (not shown) is activated. Figure 19A is a line diagram showing specific components of this embodiment, and includes some additional N2 features that are not particularly relevant to the purification features of the present invention. N2 filter An important feature of the present invention is that its A filter 18 is incorporated. In the past, the manufacturer of excimer lasers for integrated circuit lithography believed that filters related to N2 purification gas were not necessary because the specifications of A gas related to commercially available N2 were almost always good enough, so that The compliant gas system is clean enough. However, our applicants have discovered that sometimes the source gas may be out of specification, or the piping line to the purification system may contain pollutants. Furthermore, their pipelines may be contaminated during maintenance or operation procedures. Our applicants have decided that the cost of this filter is an excellent insurance against damage caused by extremely low probability contamination. One of the better N2 filters is supplied by the company Aeronex in San Diego, California] ^ 0 (^ 1 50000K inert gas purifier. This filter can remove Η20, 〇2, C0, c 〇2, &, and non-methane hydrocarbons, and reached the level of several parts per billion. It can remove 99 9999999% of all 〇03 micro-paper standards applicable to China National Standard (CNS) A4 specifications (210X297 public love) -68

------------------»!::裝—— -. ,- (請先閲讀背面之注意事項再填寫本頁) 、可_ 線_ 573389 A7 B7 五、發明説明(66 ) 米或以上之顆粒。 流量監控器 一在單元22中之流量監控器,係為每一五個淨化之組 件而設置。其中有一些具有低流量有關之警報特徵的市售 單元。 管路 最好所有管路係由具有電子拋光之内部的不銹鋼 (316SST)所構成。某些類型由PFA 400或超高純度鐵氟龍之 塑膠管,亦可加以使用。 再循環 一部份或所有之淨化氣體,可如第19B圖中所示使再 循環。在此一情況中,有一鼓風機和一水冷式熱交換器, 加入其淨化模組。舉例而言,其出自光學組件之淨化氣流 可使再循環,以及其出自電氣組件之淨化氣流可使排出, 或一部份結合之氣流可使排出。 LNP之氦氣淨化 在一些較佳之實施例中,LNP係以氦氣淨化,以及其 餘之光束路徑,係以氮氣淨化。氦氣具有一較氮氣為低之 折射率,以致使用氦氣可極小化其LNP中之熱效應。然而, 氦氣約較氮氣貴1000倍。 改良式密封層 吾等申請人業已發現到提供一極端“清潔”之光束路徑 的主要優點。彼等雷射光學器件,在高能量紫外輻射線之 存在下,並結合許多包括氧等污染物之形式,易於快速惡 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) · 69 - (請先閲讀背面之注意事項再填寫本頁) -裝丨 573389 A7 B7 五、發明説明(67 化。一些封合光束路徑之較佳技術,係說明在2〇〇1年十一 月14日提出申請之美國專利編號第1〇/〇〇〇,991號名為“Gas------------------ »! :: install——-.,-(Please read the precautions on the back before filling this page) 、 线 _ 573389 A7 B7 5. Description of the invention (66) particles of rice or more. Flow monitor-A flow monitor in unit 22 is provided for each of the five purified components. Some of these are commercially available units with low flow-related alarm features. Piping Preferably all piping is constructed of stainless steel (316SST) with electronically polished interior. Some types of plastic tubes made of PFA 400 or ultra-high purity Teflon can also be used. Recirculate some or all of the purge gas, as shown in Figure 19B. In this case, a blower and a water-cooled heat exchanger are added to the purification module. For example, the purge air flow from the optical component can be recirculated, and the purge air flow from the electrical component can be discharged, or a part of the combined air flow can be discharged. LNP helium purification In some preferred embodiments, the LNP is purged with helium, and the remaining beam paths are purged with nitrogen. Helium has a lower refractive index than nitrogen, so that the use of helium can minimize the thermal effects in its LNP. However, helium is about 1,000 times more expensive than nitrogen. Improved Sealing Layers Our applicants have discovered the main advantage of providing an extremely "clean" beam path. Their laser optics, in the presence of high-energy ultraviolet radiation, combined with many forms including pollutants such as oxygen, are easy to degrade quickly. This paper is sized to the Chinese National Standard (CNS) A4 (210X297 mm). -(Please read the precautions on the back before filling this page) -Installation 573389 A7 B7 V. Description of the invention (67). Some of the better techniques for sealing the beam path are described on November 14, 2001. U.S. Patent No. 10 / 00,991, filed on the same day, is entitled "Gas

Discharge Laser With Improved Beam Path,,(具改良式光束 路徑之氣體放電雷射)中,其係藉由參照而合併進此說明書 中。第19C、D、E、和F圖,係摘錄自該申請案。第19c圖 係一可顯示其類似上文所說明之主控振動器的氣體放電系 統之各種組件間的伸縮囊密封體之繪圖。第19D圖係顯示 一包括一至其LNP步進馬達而使此馬達與lNP封殼間之介 面密封的伸縮囊配置之修飾體。第19E圖係顯示一LNp有關 之熱去耦合孔,其可極小化上述LNP内之發熱,以及亦可 封合其LNP之入口,以使其可以極價廉之氦氣來加以淨 化。乱氣係經由第19C圖中之95處所顯示的放電室窗口單 元離開其LNP。第19F1、2、3、4、和5圖係顯示一些容易 欲封之伸縮囊密封體,其係用來在該等雷射模組間提供密 封’但可谷許快速而輕易地分離該等模組,藉以容許快速 更換模組。第19G圖係顯示一可淨化一波長計之高強度部 分的特定淨化配置。此一特定淨化係說明於下文中。 此系統之優點 本說明書中所說明之系統,係表示有關krF及特別有關 ArF和F2雷射之長期激態分子雷射性能的一個重大改良。彼 等污染問題,基本上可被消除,此可使得大幅增加彼等組 件之壽命期和光束品質。此外,由於其除經由出口埠外之 滲漏已被消除,其流量可被控制至所希望之值,此效應可 使N2之需求量降低約50%。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 70 ;…: -:…VI:裝…: .- .. (請先閲讀背面之注意事項再填寫本頁) 、訂— —線丨 573389 五、發明説明(68 ) 具瓦特表之密封式光闊單元 此第-較佳之實施例’係包括一内建一如第2〇、2〇a、 和20B圖中所顯示之瓦特表的密封式光閥單㈣g。在此一 重要改良下,其光閥係具有兩項功能,第一,為一可阻隔 雷射光束之光閥,以及第二,為一可在有需要測量時監控 光束功率之全光束瓦特表。 第20圖係一可顯示上述光閥單元之主要組件的頂視 圖。其中有光閥502、光束收集器504、和瓦特表5〇6。其雷 射輸出光束於其光閥在閉合位置下之路徑,係顯示在第2〇 圖中之510處。其在光閥打開下之路徑,係顯示在512處。 其光束停止組件5 16之光閥活性表面,係與其光束離開放電 至之方向成45。,以及當其光閥為閉合時,該光束會在其光 閥之表面中被吸收,以及會反射至其光束收集器5〇4。其光 束收集器之活性表面和其光閥之活性表面兩者,係為就雷 射光束之高吸收率而做鏟鉻處理。在此一實施例中,其光 束停止組件516,係安裝在其撓曲性彈簧鋼臂518上面。其 光閥係藉由施加一電流至第20B圖中所示之線圈514,而使 該等撓曲性臂5 18和光束停止元件5 16,拉向此線圈,藉以 使其光束停止元件516,離開其輸出雷射光束之路徑,而被 打開。該光閥係藉由停止流經其線圈5 14之電流,使其永久 磁鐵520’將該專挽曲性臂518和光束停止元件516,拉回其 閉合位置内,而被關閉。在一較佳之實施例中,其電流流 量係做仔細修整,以使該元件和臂,能在打開和關閉位置 間輕易變遷。 71 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 --------- 五、發縣明(69 ) '~ ' 其瓦特表506,係在一類似之方式中運作,而將其熱 電光偵測器,置於第20和20A圖中所顯示之輸出雷射光束 的路徑中。在此一情況中,該等線圈52〇和磁鐵522,可拉 動其偵測器單元524和其之撓曲性臂526,使進出於其光束 路徑,以便做輸出功率之測量。此瓦特表可在使光闊打開 及使光閥關閉下而運作。其至線圈之電流,係如同其光閥 一樣受到控制,藉以使其單元524能輕易變遷進出於其光束 路徑。 改良式波長計淨化 在此一較佳實施例中,一特定之乂淨化技術,係被用 來提供其波長計和輸出搞合器和放電室輸出窗口區塊之高 紫外線通量部分的額外淨化。此一技術係顯示在第22圖 中。誠如上文所解釋,其雷射輸出光束係部份與其反射面 鏡170(亦見於第14圖)相交,其可令該光束中95〇/〇之能量通 過,而成為一輸出光束。大約有4%反射之光束,會自其面 鏡171反射至其能量偵測器172,在此其脈波能量會被測 量。(其他部分之反射光束,如61A處所示,將會通過其面 鏡171,以及將會行至此波長計中之其他監控器)。在4,〇〇〇 Hz下,此5%之輸出能量,係表示大量之uv光波,故須採 取特殊之情況,以確保此光束部分之路徑中的氣體,能極 清潔及純淨。為此,其波長計係經修飾,以封合其面鏡170 之上游側、其面鏡171之上游侧、和其偵測器172之窗口的 前側間之區域,使與該波長計之其餘部分分離。一來回於 此區域之特定淨化氣流,在設置上係如62八處所示。該波 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) 72 ·-------V:裝----- .- 辱_ (請先閲讀背面之注意事項再填寫本頁)Discharge Laser With Improved Beam Path, (Gas Discharge Laser with Improved Beam Path) is incorporated into this manual by reference. Figures 19C, D, E, and F are excerpts from the application. Fig. 19c is a drawing showing a bellows seal between various components of a gas discharge system similar to the master-controlled vibrator described above. Fig. 19D shows a modified body in a telescoping arrangement including one to its LNP stepper motor and sealing the interface between the motor and the lNP envelope. Fig. 19E shows a thermal decoupling hole related to LNp, which can minimize the heat generation in the above LNP, and also can seal the entrance of the LNP, so that it can be purified by extremely inexpensive helium. Turbulent gas leaves its LNP via the discharge cell window unit shown at 95 in Fig. 19C. Figures 19F1, 2, 3, 4, and 5 show some easy-to-seal retractable capsule seals, which are used to provide a seal between the laser modules, but they can be quickly and easily separated. Modules to allow quick module replacement. Figure 19G shows a specific purification configuration that purifies the high-intensity portion of a wavelength meter. This particular purification is described below. Advantages of this system The system described in this manual represents a major improvement in the long-term excimer laser performance of krF and particularly of ArF and F2 lasers. Their pollution problems can basically be eliminated, which can significantly increase the lifetime and beam quality of their components. In addition, since its leakage except through the outlet port has been eliminated, its flow can be controlled to the desired value, which can reduce the demand for N2 by about 50%. This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 70; ...:-: ... VI: installed ...:.-.. (Please read the precautions on the back before filling this page), order — — Line 丨 573389 V. Description of the invention (68) Sealed light unit with wattmeter This first-best embodiment includes a built-in wattage as shown in Figures 20, 20a, and 20B. Table sealed light valve single ㈣g. Under this important improvement, its light valve system has two functions. First, it is a light valve that can block the laser beam, and second, it is a full beam wattmeter that can monitor the beam power when measurement is needed. . Fig. 20 is a top view showing the main components of the light valve unit. Among them are a light valve 502, a beam collector 504, and a wattmeter 506. The path of its laser output beam to its light valve in the closed position is shown at 510 in Figure 20. Its path with the light valve open is shown at 512. The active surface of the light valve of the beam stopping component 5 16 is 45 with the direction in which the light beam leaves the discharge. , And when its light valve is closed, the light beam will be absorbed in the surface of its light valve, and will be reflected to its beam collector 504. Both the active surface of its light beam collector and the active surface of its light valve are shovel-treated for high absorption of the laser beam. In this embodiment, its beam stop assembly 516 is mounted on its flexible spring steel arm 518. The light valve of the light valve is to apply a current to the coil 514 shown in FIG. 20B, so that the flexible arms 5 18 and the beam stopping element 5 16 are pulled toward this coil, thereby causing its beam stopping element 516, It leaves the path of its output laser beam and is turned on. The light valve is closed by stopping the current flowing through its coil 5 14 to cause the permanent magnet 520 'to return the special flexible arm 518 and the beam stop element 516 to their closed positions. In a preferred embodiment, the current flow is carefully trimmed so that the element and arm can be easily changed between open and closed positions. 71 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 573389 A7 --------- V. Faxian Ming (69) '~' Its wattmeter 506 is similar to It operates in the mode, and its thermoelectric light detector is placed in the path of the output laser beam shown in Figures 20 and 20A. In this case, the coils 52 and the magnets 522 can pull their detector unit 524 and their flexible arms 526 into and out of their beam paths for the measurement of output power. This wattmeter can be operated with the light open and the light valve closed. The current to the coil is controlled like its light valve, so that its unit 524 can easily transition into its beam path. Improved wavelength meter purification. In this preferred embodiment, a specific purification technique is used to provide additional purification of the high ultraviolet flux portion of its wavelength meter and output coupler and the output window block of the discharge chamber. . This technique is shown in Figure 22. As explained above, part of its laser output beam intersects with its reflective mirror 170 (see also Figure 14), which can pass through 95% of the energy in the beam into an output beam. Approximately 4% of the reflected beam will be reflected from its mirror 171 to its energy detector 172, where its pulse energy will be measured. (The other part of the reflected beam, as shown at 61A, will pass through its mirror 171, and will go to other monitors in this wavelength meter). At 4,000 Hz, this 5% output energy represents a large number of UV light waves, so special conditions must be taken to ensure that the gas in the path of this beam part can be extremely clean and pure. For this reason, its wavelength meter is modified to seal the area between the upstream side of its mirror 170, the upstream side of its mirror 171, and the front side of the window of its detector 172, so as to communicate with the rest of the wavelength meter Partially separated. The specific purge air flow back and forth in this area is shown in Figure 62 on the setup. The Bourbon paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297). 72 · ------- V: installed ----- .- shame_ (Please read the notes on the back before filling (This page)

•、可I .線丨,’ 573389 A7 I--— 五、發明説明(70 ) '--— 之剩餘部分,係由_如6从處所示之第二淨化氣流來 加以淨化。 -淨化氣流62A ’係藉由面鏡17〇、m、和侦測器窗 。、⑴封而局限於其波長計内。此淨化氣流將會離開 此區域’沿著其雷射輸出光束路徑,經由一伸縮囊區域 6A ^返回至其輸出搞合器模組68A,藉以使其淨化。此 u著會流經其伸縮囊單元7qa,以及會進人其窗口區 W2A ’經該f 口區塊内之—出口埠和該伸縮囊單元7〇a 中之:出口埠離開,而接著如74A處和第19圖中所示,經 由管返至其A淨化模組17。其窗口 17〇之下游側,係以 纟自其光閥额5K之淨化氣流來加以淨化。&淨化氣流可 如第19圖中所不,來自其模組j 7,或者在某些情況中,係 #除其窗口 76Α,以及其光閥模組之輸出,係開放地與一 被淨化之用戶光束管線相連接,在此一情況中,其在78Α 處之出口淨化管線,可被引導至一用戶淨化回路系統,或 使排放至大氣。 其他高重複率之改良 固定之光學參數 I ^其雷射和其他平版印刷術設備是新的時,彼等如本 說明書中所述之高重複率,將可提供較所需要為多之照 度。隨著彼等平版印刷術雷射之老化,其光學光束之品質 特性可能會改變。通常,其品質係傾向於慢慢惡化。當其 光束品質即使在維修後不再能符合規範時,通常便須要更 換彼等主要組件(例如其雷射放電室、LNP、和/或波長 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) ---• 、 I. Line 丨, ’573389 A7 I --- V. The remaining part of the description of the invention (70) '--- is purified by the second purification air stream as shown in 6 from here. -The purge air 62A 'is via a mirror 170, m, and a detector window. , Sealed and confined to its wavelength meter. This purification airflow will leave this area 'along its laser output beam path, and return to its output clutch module 68A via a telescoping area 6A ^ to purify it. This will flow through its expansion capsule unit 7qa, and will enter its window area W2A 'via the exit port in the f-port block and the expansion capsule unit 70a: exit port, and then as At 74A and shown in FIG. 19, it is returned to its A purification module 17 via a pipe. The downstream side of its window 170 is cleaned with a purifying air stream of 5K from its light valve. & Purge air may not be as shown in Figure 19, from its module j 7, or in some cases, except for its window 76A, and the output of its light valve module, is open and cleaned The user beam line is connected. In this case, the outlet purification line at 78A can be directed to a user purification circuit system or discharged to the atmosphere. Other high repetition rate improvements Fixed optical parameters I ^ When lasers and other lithography equipment are new, their high repetition rate as described in this specification will provide more illuminance than needed. As their lithography lasers age, the quality characteristics of their optical beams may change. Generally, its quality tends to deteriorate gradually. When their beam quality no longer meets the specifications even after repair, their main components (such as their laser discharge cells, LNP, and / or wavelengths are usually required to be replaced. This paper applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) ---

、τ· (請先閲讀背面之注意事項再填寫本頁) :.線丨 573389 A7 B7 五、發明説明(71 ) ~ ^ ' 計)。因此’在其雷射光束之整個壽命中,其品質可能會在 其規範範圍内做大幅改變。此可能為彼等利用一些在設計 上供光學σ口貝雷射光束用之平版印刷術設備的積體電路平 版印刷薇家有關之問題。此較正常雷射品質為”佳"之、会士 果,將會造成積體電路品質中之不當變動。一解決方案是, 提供一光束品質在整個雷射壽命中能大體上保持固定之雷 射系統。此在完成上可使用2001年十二月21日提出申請之 美國專利編號第10/036,727號中所說明的技術,其中,壓 電驅動器轉動之面鏡,可被用來提供彼等對應於其所預期 之標稱值的波長穩定度值和頻寬值,而非其雷射所允許之 最佳值。脈波能量亦可使用上文所說明之回授控制來加以 控制,藉以維持一所預期之標稱值的能量穩定度值,而非 其最佳之可能值。氟氣濃度和雷射氣體壓力,亦可加以調 節’以產生所預期之光束品質值,而非其脈波能量和波長 之最穩定值,和其最窄之可能頻寬值。 高重複率ΜΟΡΑ 在本發明之較佳實施例中,係應用至一主控振盪器_ 功率放大器(ΜΟΡΑ)氣體放電雷射系統,諸如以下讓渡給此 申請案之讓受人的專利申請案中所說明者:美國專利編號 第 09/943,343、10 /012,002、1〇,〇56,619、和 10/141,216號, 彼等全係藉由參照而合併進此說明書中。第23圖係吾等申 請人和同僚所設計之ΜΟΡΑ系統4Κ的一個繪圖。其光束品 質係在其主控振盪器8Κ内受到控制,以及其脈波功率係在 其功率放大器10Κ内受到控制。藉由增加其脈波重複率, 本紙張尺度適用中國國家標準(CNS) Α4規格(21〇><297公釐) 74 (請先閲讀背面之注意事項再填寫本頁) •訂— .…線丨 573389 A7 B7 五、發明説明(72 ) 可以每脈波較少之能量,來提供相同之UV能量。降低其每 脈波之能量,可使昂貴之平版印刷術光學設備,有較長之 有效壽命。此如第23圖中所顯示之實施例,亦包括上述 ΜΟΡΑ所需之脈波展寬設備(稱作脈波倍增器12K),和一如 下文所討論之光束輸送單元40Α。 脈波倍增器 具有備用之能量,可容許添加設備來擴展其雷射脈波 之時寬。一用以擴展脈波時寬之技術,為將每一脈波分離 成兩個或以上之部分,使除其第一部分外之所有部分延 遲,接著再使彼等重新結合在一起。一此類技術係說明在 美國專利編號第6,067,311號中,其已讓渡給吾等申請人之 雇主,以及係藉由參照而合併進此說明書中。另一此類技 術係說明在2001年11月29日提出申請之美國專利編號第 10/006,913號中,其係藉由參照而合併進此說明書中。第 24Α、24Β和24C圖摘錄自該申請案之繪圖,係說明該技術。 第24Α和24C圖係顯示其脈波擴展之前和之後的結果。 本發明可做各種修飾,而不致改變其界定範圍。本技 藝之專業人員,將可理解出許多其他可能之變更形式。此 系統在設計上可供任何重複率範圍在大約3000 Hz高達 6000 Hz至10,000 Hz之高脈波重複率使用。以上特別針對 KrF所說明之雷射系統,可藉由改變其氣體混合物,以及 就193 nm之運作修改其LNP和波長計,而被利用為一 Ar*F 雷射。其較佳之電極間隔,係自16.5 mm縮小至13.5 mm。 舉例而言,其頻寬之主動回授控制,可藉由使用一馬達驅 75 (請先閲讀背面之注意事項再填寫本頁) :線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 573389 A7 B7 五、發明説明(73 動器,來調整第22A圖中所示之彎曲機構,藉以調整其線 窄化光栅之曲率,而被設置成。或者其頻寬更快速之控制, 可藉由使用壓電裝置,來控制其光栅之曲率,而被設置成。 其他熱交換器之設計,應為本說明書所顯示之組態很明顯 的修飾體。舉例而言,四個單元可被結合成一單一單元。 在其熱交換器上面,使用較大之散熱片,係具有顯著之優 點,其可緩和其氣體溫度因其雷射之脈波串模態的運作而 發生之急劇改變所致的影嚮。讀者理應瞭解的是,在極高 之脈波率下,其脈波能量上面之回授控制,並非必然要足 夠快速地使用其前接之脈波,來控制一特定脈波之脈波能 量。舉例而言,可提供一些控制技術,其中有關一特定脈 波之測量脈波能量’可被用於其第二或第三後接之脈波的 控制中。其用以將波長計標準具和光栅之資料轉換成一些 波長值的演算法中,有許多可能之變更形式和修飾體。舉 例而言,吾等申請人業已發現到,其標準具光學系統中之 -聚焦誤差,將會造成一極小量之誤差,其會使得所測量 之線寬度較其貫際為大。此誤差將會隨著該等正被測量之 標準具條紋的直徑之加大而略有增加。此可藉由掃猫其雷 射和某一範圍之波長,以及注意該等測量之條紋離開該等 窗口時的步階變化,來加以校正。一校正因數,可接著基 於該等測量條紋在窗口内之位置,而被決定。因此,上文 之揭示内容,並非有限制意,以及本發明之界定範圍,應 由其附申請專利範圍和彼等之法定同價體,來加以決定。 本紙張尺度適用中國國家標準(OJS) Α4規格(21〇χ297公釐) 76 -------------·-----J;:裝----- ., ·- (請先閲讀背面之注意事項再填寫本頁) -、?τ— —線丨 573389 A7 ------- B7 五、發明説明(74 ) 元件編號對照 1K…狀態燈 12Κ…脈波倍增器 2K…控制模組 11Κ…冷卻水分配模組 2P-LNP 12Κ…雷射氣體供應模組 3K…壓縮頭模組 12Ρ···輸出耦合器 4K…穩定化模組 13Κ…通風組體 4K…ΜΟΡΑ系統 14···調制面鏡 4Ρ···高電壓組件 14Α…彈簧 5Κ…自動光閥模組 14Κ…右侧鼓風機馬達 6Α…伸縮囊區域 14Ρ···波長計 6Κ…MFT電源供應器 15Κ…線窄化模組 6Ρ…雷射放電室 16Κ…右側鼓風機馬達控制器 7Κ…左側鼓風機馬達 16Ρ…Ν2來源 8Κ…雷射放電室模組 17…叫淨化模組 8Κ…主控振盪器 17Κ· · ·左側鼓風機馬達控制器 8Ρ…高電壓電纜 17Ρ…Ν2淨化模組 9Κ···介面模組 18…Ν2過濾器 10…雷射 18Α…陰極 10Α…雷射放電室 18Κ…整流器模組 10Κ…功率放大器 18Ρ…Ν2過濾器 10 Κ…冷卻水供應模組 12,14···外殼結構構件 10Ρ···脈波功率組件 18,20…電極 12Α,14Α···外殼結構構件 18Α1…陰極 (請先閲讀背面之注意事項再填寫本頁) 裝· .、可| .線丨·•丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 77 573389 A7 B7 五、發明説明(75 ) 19K···共振充電器模組 48A…空心圓柱形狀體部分 20A…陽極 48B…部分 20K…高電壓電源供應器模組 49···陶鐵磁體環 20P…分配面板 52…C1電容器排組 21K…AC/DC配電模組 54…可飽和式電感器 22…放電 48…陽極座氣體流量整形結構 22"*DC電源供應器 48,54,64···電感器 22…流量監控單元 50…主絕緣體 22P···流量監控單元 50…上氣體流量整形結構 24A···雷射控制器 50A…主絕緣體 33…輸出光束 52—C1電容器排組 40…整流器 52…氣體轉向葉片 40A…光束輸送單元 54A…水冷式可飽和型電感器 42…充電電容器C〇 54A1···水冷式套管 42…電容器 54A2···冷卻管線 42,52,62,82···電容器排組 54A3···鳩尾槽 46…固模態開關 56…升壓脈波變壓器 46…鼠籠式風扇 56…變壓器 46…固態開關 56A···鋁製捲線軸 46A…切線型風扇葉片結構 56B···印刷電路板 46A…風扇 56C…絕緣體 46A,46B …IGBT 開關 56D···不銹鋼次級線圈低壓端部 48…葉片 56E…初級線圈HV引線 48,54,64…電感器 56F···高電壓端子 (請先閲讀背面之注意事項再填寫本頁) 、訂— 線丨丨.丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 78 573389 A7 B7 五、發明説明(76 ) 58A…水冷式熱量交換器單元 80…壓電驅動器 60…壓縮頭 80…ΡΖΤ(壓電驅動器) 60…上游預電離器管 80Α…壓電座 60 A…槽孔 81…金鋼石塾 61…淨化管 82…步進馬達 62…波峰電容器排組 82Α…步進馬達框架 62A…特定淨化氣流 84…陰極 64…靜電捕集器單元 84…槓桿臂 64…可飽和式電感器 85…球形滾珠轴承 64A…第二淨化氣流 86…面鏡座 64A···可飽和式電感器 86…面鏡座 64A1…外殼 87…伸縮囊 64A2···鳩尾槽溝 95···放電室窗口單元 64 A3···磁怒 102…雷射控制器 66…葉片結構 104…波長計 68…區域 106…LNP處理器 68A···輸出耦合器模組 120…波長計單元 69…發光二極體 130…軸桿 70A…伸縮囊單元 132…滾珠軸承 72A…窗口區塊 136…封合構件 74A…管 140…馬達定子 76A…窗口 170…分光器 78A…出口淨化管線 170…窗口 80···ΡΖΤ 管組 170···反射面鏡 (請先閲讀背面之注意事項再填寫本頁) …裝丨 訂| _ _線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 79 573389 A7 B7 五、發明説明(77 ) 171…面鏡 197…波長計處理器 172···能量偵測器 198…蒸汽隔間 173…面鏡 200…標準式DC電源供應器 174…面鏡 200…壓力計 175…面鏡 202…電容器 176···中階梯光柵 202…控制器 177…狹缝 204…調制控制 178…透鏡 204…控制面板 179…面鏡 206…IGBT開關 180…線性發光二極體陣列 208…電感器 180···發光二極體陣列 210…命令電壓 181…散光片 212…電壓回授信號 181A,181C…透鏡 214…電流回授信號 181D…繞射性散光片 215…慣動二極體路徑 181E…透鏡 216…分電降壓電路 181F…分光器 300…三相電源供應器 181G…傳統式散光片 301,302,303,304···磁磁通 181H…狹縫 拒斥金屬塊 182…面鏡 302…電源電容器 183…透鏡 302…附散熱片之結構 181L···透鏡 303…散熱片 184…標準具 304…控制板 190…絕對波長參照校正單元 304…撓曲性凸緣單元 197···波長計控制器 304A···内部凸緣 (請先閲讀背面之注意事項再填寫本頁) ,裝丨、 Τ · (Please read the precautions on the back before filling this page):. Line 丨 573389 A7 B7 V. Description of the invention (71) ~ ^ 'count). Therefore, 'the quality of its laser beam may change significantly within its specifications throughout its lifetime. This may be a problem related to their use of integrated circuit lithographic printing for some lithographic equipment designed for optical sigma beam laser beams. This is "better" than normal laser quality, and it will cause improper changes in the quality of the integrated circuit. One solution is to provide a beam quality that can be maintained substantially constant throughout the life of the laser. Laser system. The technology described in US Patent No. 10 / 036,727, filed on December 21, 2001, can be used for this purpose, in which a mirror driven by a piezoelectric actuator can be used to provide The wavelength stability value and bandwidth value corresponding to its expected nominal value, rather than the optimal value allowed by its laser. Pulse energy can also be controlled using the feedback control described above, The energy stability value to maintain a desired nominal value, rather than its best possible value. The fluorine gas concentration and laser gas pressure can also be adjusted to produce the desired beam quality value, rather than its The most stable value of pulse wave energy and wavelength, and its narrowest possible bandwidth value. High repetition rate MOPA In a preferred embodiment of the present invention, it is applied to a main control oscillator _ power amplifier (MOPA) gas discharge Laser system Such as those described in the patent applications assigned to the assignee of this application: US Patent Nos. 09 / 943,343, 10 / 012,002, 10,056,619, and 10 / 141,216, all of which It is incorporated into this description by reference. Figure 23 is a drawing of the MOPA system 4K designed by our applicants and colleagues. Its beam quality is controlled in its main control oscillator 8K, and its pulse wave The power is controlled within 10K of its power amplifier. By increasing its pulse wave repetition rate, this paper size applies the Chinese National Standard (CNS) A4 specification (21〇 > < 297mm) 74 (Please read the back Note for this page, please fill in this page again) • Order —…… line 573389 A7 B7 V. Description of the invention (72) It can provide the same UV energy with less energy per pulse. Reducing the energy per pulse can make it Expensive lithography optical equipment has a longer effective life. This embodiment, as shown in Figure 23, also includes the pulse wave stretching equipment (referred to as the pulse multiplier 12K) required by the above MOPA, and a Beam output as discussed below Unit 40A. The pulse multiplier has backup energy, which allows equipment to be added to extend the duration of its laser pulse. A technique to extend the pulse duration is to separate each pulse into two or more Part of it, delaying all but its first part, and then bringing them back together. One such technology is described in US Patent No. 6,067,311, which has been assigned to our applicant's employer , And is incorporated into this specification by reference. Another such technology is described in US Patent No. 10 / 006,913, filed on November 29, 2001, which is incorporated by reference into this specification in. Drawings 24A, 24B, and 24C are excerpted from the drawing of the application, illustrating the technique. Figures 24A and 24C show the results before and after their pulse wave expansion. Various modifications can be made in the present invention without changing its defined scope. A person skilled in the art will understand many other possible variations. This system is designed for any high pulse repetition rate ranging from approximately 3000 Hz up to 6000 Hz to 10,000 Hz. The laser system described above specifically for KrF can be used as an Ar * F laser by changing its gas mixture and modifying its LNP and wavelength meter for 193 nm operation. The preferred electrode spacing is reduced from 16.5 mm to 13.5 mm. For example, the active feedback control of its bandwidth can be achieved by using a motor drive 75 (please read the precautions on the back before filling this page): Line 丨 This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 573389 A7 B7 V. Description of the invention (73 actuators to adjust the bending mechanism shown in Figure 22A, so as to adjust the curvature of the line narrowing grating, and is set to. Or its bandwidth is faster The control can be set by using a piezoelectric device to control the curvature of its grating. The design of other heat exchangers should be a modification of the configuration shown in this manual. For example, four The unit can be combined into a single unit. On its heat exchanger, the use of larger heat sinks has significant advantages, which can mitigate the sharpness of its gas temperature due to the operation of its laser pulse train mode. The effect caused by the change. The reader should understand that at very high pulse rates, the feedback control above the pulse energy is not necessarily fast enough to use the pulses immediately before it to control a specific Pulse wave Pulse energy. For example, some control techniques can be provided, in which the measured pulse energy of a particular pulse is used to control the pulse of the second or third pulse. There are many possible variations and modifications in the algorithm of converting the wavelength etalon and grating data into some wavelength values. For example, our applicants have discovered that the focus error in the etalon optical system , It will cause a small amount of error, which will make the measured line width larger than its range. This error will increase slightly with the diameter of the etalon stripes being measured being increased. This can be corrected by sweeping the cat's laser and a range of wavelengths and paying attention to the step changes of the measured stripes as they leave the windows. A correction factor can then be based on the measured stripes in the window. Therefore, the above disclosure is not intended to be restrictive, and the scope of the invention should be determined by the scope of its patent application and their legal equivalents. Paper size applies Chinese National Standard (OJS) Α4 specification (21〇χ297 mm) 76 ------------- · ----- J ;: installed -----., · -(Please read the precautions on the back before filling in this page)-,? Τ— —line 丨 573389 A7 ------- B7 V. Description of the invention (74) Component number comparison 1K ... Status lamp 12K ... Pulse Multiplier 2K ... Control module 11K ... Cooling water distribution module 2P-LNP 12K ... Laser gas supply module 3K ... Compression head module 12P ... Output coupler 4K ... Stabilization module 13K ... Ventilation group 4K ... MPO system 14 ... Modulation mirror 4P ... High voltage assembly 14A ... Spring 5K ... Automatic light valve module 14K ... Right blower motor 6A ... Telescopic bag area 14P ... Wavelength meter 6K ... MFT power supply 15K ... Line narrowing module 6P ... Laser discharge chamber 16K ... Right blower motor controller 7K ... Left blower motor 16P ... N2 source 8K ... Laser discharge chamber module 17 ... Called purification module 8K ... Main control oscillator 17K · · · Left blower motor controller 8P ... High voltage cable 17P ... N2 purification module 9K ... · Interface module 18 ... Ν2 filter 10 ... laser 18A ... cathode 10AA ... laser discharge chamber 18K ... rectifier module 10K ... power amplifier 18P ... N2 filter 10K ... cooling water supply module 12, 14 ... · Shell structural member 10P ... · Pulse wave power components 18,20… Electrode 12A, 14Α ··· Case structure member 18Α1… Cathode (Please read the precautions on the back before filling this page) Applicable to China National Standard (CNS) A4 specification (210X297 public love) 77 573389 A7 B7 V. Description of the invention (75) 19K ... Resonant charger module 48A ... Hollow cylindrical body part 20A ... Anode 48B ... Part 20K ... High Voltage power supply module 49 ... Pottery ferromagnetic ring 20P ... Distribution panel 52 ... C1 capacitor bank 21K ... AC / DC power distribution module 54 ... Saturable inductor 22 ... Discharge 48 ... Anode block gas flow shaping structure 22 " * DC power supply 48,54,64 ··· Inductor 22 ... Flow monitoring unit 50 ... Main insulator 22P ... Flow monitoring unit 50 ... Upper gas flow shaping structure 24A ... Laser controller 50A ... Main insulator 33 ... Beam 52—C1 capacitor bank 40 ... rectifier 52 ... gas turning blade 40A ... beam delivery unit 54A ... water-cooled saturable inductor 42 ... charging capacitor C〇54A1 ... water-cooled bushing 42 ... capacitor 54A2 ... · Cooling line 42,52,62,82 ··· Capacitor bank 54A3 ··· Dovetail slot 46… Solid mode switch 56… Boost pulse transformer 46… Cage fan 56… Transformer 46… Solid state switch 56A · ·· Aluminum spool 46A ... Tangential fan blade structure 56B ··· Printed circuit board 46A ... Fan 56C ... Insulators 46A, 46B ... IGBT switch 56D ··· Stainless steel secondary coil low voltage end portion 48 ... Blade 56E ... Primary coil HV leads 48,54,64… Inductors 56F ··· High-voltage terminals (please read the precautions on the back before filling in this page), order-wire 丨 丨. 丨 This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 78 573389 A7 B7 V. Description of the invention (76) 58A ... Water-cooled heat exchanger unit 80 ... Piezo actuator 60 ... Compression head 80 ... PTZ (piezo actuator) 60 ... Upstream pre-ionizer tube 80A ... Piezo base 60 A ... Slot 81 ... Golden stone 61 ... Purification tube 82 ... Stepper motor 62 ... Surge capacitor bank 82A ... Stepper motor frame 62A ... Specific purification air flow 84 ... Cathode 64 ... Electric trap unit 84 ... Leverage Arm 64 ... Saturable inductor 85 ... Spherical ball bearing 64A ... Second purge air flow 86 ... Mirror mount 64A ... Saturable inductor 86 ... Mirror mount 64A1 ... Housing 87 ... Retractable capsule 64A2 ... Dovetail Slot 95 ··· Discharge chamber window unit 64 A3 ··· Magnetic 102 ... Laser controller 66 ... Blade structure 104 ... Wavelength meter 68 ... Area 106 ... LNP processor 68A ... Output coupler module 120 ... Wavelength meter unit 69 ... light emitting diode 130 ... shaft 70A ... retractable capsule unit 132 ... ball bearing 72A ... window block 136 ... sealing member 74A ... tube 140 ... motor stator 76A ... window 170 ... splitter 78A ... exhaust purification Pipe 170 ... Window 80 ... PTZ Tube group 170 ... Reflective mirror (Please read the precautions on the back before filling out this page)… Binding 丨 _ _ Line 丨 This paper size applies to Chinese National Standards (CNS) A4 size (210X297 mm) 79 573389 A7 B7 V. Description of the invention (77) 171 ... mirror 197 ... wavelength meter processor 172 ... energy detector 198 ... steam compartment 173 ... mirror 200 ... standard DC power supply 174 ... mirror 200 ... manometer 175 ... face mirror 202 ... capacitor 176 ... middle step grating 202 ... controller 177 ... slot 204 ... modulation control 178 ... lens 204 ... control panel 179 ... face mirror 206 ... IGBT switch 180 ... linear light emitting diode Body array 208 ... inductor 180 ... light emitting diode array 210 ... command voltage 181 ... astigmatism sheet 212 ... voltage feedback signals 181A, 181C ... lens 214 ... current feedback signal 181D ... diffractive astigmatism sheet 215 ... custom Moving diode path 181E ... lens 216 ... distribution step-down circuit 181F ... splitter 300 ... three-phase power supply 181G ... conventional astigmatism sheet 301, 302,303,304 ... magnetic flux 181H ... slit rejection metal block 182 ... face mirror 302 ... power capacitor 183 ... lens 302 ... structure with heat sink 181L ... lens 303 ... heat sink 184 ... etalon 304 ... control board 190 ... absolute wavelength reference correction unit 304 ... flexible flange sheet 197 ??? wavelength meter controller 304A ··· internal flange (Read the back of the precautions to fill out this page), installed Shu

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If · 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 80 573389 A7 B7 五、發明説明(78 ) 304B…伸縮囊 518…撓曲性彈簧鋼臂 304C···外部凸緣 520…永久磁鐵 306···塑料湍流器 522…磁鐵 307…磁芯 524…偵測器單元 307A,B,C…線圈 526…撓曲性臂 308…c-形密封層 530,532…馬達 400···雙埠螺帽 534…右馬達控制器 400···微處理器 536…從動馬達控制器 402…0-形環 540Α,540Β·"定位圈 402…可程式化邏輯裝置 540…陽極 404…執行程序暨資料記憶排組 541…陰極 404···儲存裝置 541…陶瓷滾珠 406…特殊極快速RAM 541…頂蓋 408···圖素RAM記憶體排組 541Α,541Β…電極 410…類比數位轉換器 542…鈍葉片形電極 500···密封式光閥單元 542…底蓋 502…光閥 542…陽極 504···光束收集器 542Α…鎖定銷 506···瓦特表 541C···陰極 510…路徑 542C…陽極 512…路徑 543…中心心軸 514…線圈 544…介電質隔片 516…光束停止組件 544Β···絕緣體隔片 518…撓曲性臂 544C···槽溝通道 (請先閲讀背面之注意事項再填寫本頁) …裝· 、可| …線丨 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 81 573389 A7 B7 五、發明説明(79 ) 545…外殼 600…外部圓筒 546···陽極支撐桿 600,602…氧化铭層 546···散熱片 602…内部圓筒 546…陽極座棒 604,606 …孔 547…強迫通風間 604…電極 547…陽極座棒 606…喷嘴型狹縫 548···電流回路 608…氣體泵 549…管路 608…鼓風機 550…鼓風機 610…水冷式熱交換器 551···水冷式熱交換器 612…強迫通風間 552···強迫通風間 614…狹缝型喷嘴 553···注入喷嘴 620…放電室 555···風扇吸力 622…鼓風機單元 (請先閲讀背面之注意事項再填寫本頁) 、可| ----線_ f 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 82If · This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 80 573389 A7 B7 V. Description of the invention (78) 304B ... telescopic bag 518 ... flexible spring steel arm 304C ... outer flange 520 … Permanent magnets 306 ·· plastic turbulators 522 ... magnets 307 ... cores 524 ... detector units 307A, B, C ... coil 526 ... flexible arms 308 ... c-shaped seals 530,532 ... motors 400 ... Double port nut 534 ... Right motor controller 400 ... Microprocessor 536 ... Driven motor controller 402 ... 0-ring 540A, 540B ... " Positioning ring 402 ... Programmable logic device 540 ... Anode 404 ... Execution program and data memory bank 541 ... Cathode 404 ... Storage device 541 ... Ceramic ball 406 ... Special extremely fast RAM 541 ... Top cover 408 ... Picture RAM memory bank 541A, 541B ... Electrode 410 ... Analog digital Converter 542 ... blunt blade electrode 500 ... sealed light valve unit 542 ... bottom cover 502 ... light valve 542 ... anode 504 ... beam collector 542A ... locking pin 506 ... Wattmeter 541C ... cathode 510 ... path 542C ... anode 512 ... path 54 3 ... central mandrel 514 ... coil 544 ... dielectric spacer 516 ... beam stop assembly 544B ... insulator spacer 518 ... flexible arm 544C ... channel communication (please read the precautions on the back before filling (This page)… installed ·, can be used for… line 丨 This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 81 573389 A7 B7 V. Description of the invention (79) 545 ... Housing 600 ... Outer cylinder 546 · ·· Anode support rods 600, 602 ... Oxide layer 546 ··· Heat fin 602 ... Inner cylinder 546 ... Anode socket rods 604,606 ... Hole 547 ... Forced vented chamber 604 ... Electrode 547 ... Anode socket rod 606 ... Nozzle slit 548 · ·· Current circuit 608 ... Gas pump 549 ... Pipe line 608 ... Blower 550 ... Blower 610 ... Water-cooled heat exchanger 551 ... Water-cooled heat exchanger 612 ... Forced ventilation room 552 ... Forced ventilation room 614 ... Slit Type nozzle 553 ... injection nozzle 620 ... discharge chamber 555 ... fan suction 622 ... blower unit (please read the precautions on the back before filling this page), can | ---- line_ f This paper size is applicable to China National Standard (CNS) A4 Regulation (210X297 mm) 82

Claims (1)

六、申請專利範圍 1. 一種極高重複率之氣體放電雷射系統,其可運作於一超 過每秒4,000個脈波之脈波重複率,此種雷射係包括: A) —内含一雷射氣體及具有兩長形電極之雷射放電 室,其可界定出一放電區域, B) —妓風機系統,其可在上述之放電區域内,產生足 夠氣體速度之雷射氣體,藉以在每秒6,〇〇〇個脈波或 以上之範圍内的重複率下運作時,緊接每一脈波, 在次一脈波之前,自其放電區域,大體上清理出其 放電所產生之所有離子, C) 一熱父換器系統,其可自上述之雷射氣體,移除至 少16 kw之熱能, D) —脈波電力系統,其在配置上可提供一些電氣脈波 給該等電極,使足以在大約每秒6,〇〇〇個脈波之速率 下,產生一些具有大約5 mJ之範圍内受到精密控制 之脈波能量的雷射脈波,和 E) 一雷射光束測量暨控制系統,其可以脈波能量和波 長之回授控制,來測量每一脈波或大體上每一脈波 之脈波能量、波長、和頻寬。 2·如申請專利範圍第1項之氣體放電雷射系統,其中之放 電雷射系統為KrF、激態分子雷射系統,以及其雷射氣 體’係由氪氣、氟氣和氖氣所構成。 3·如申請專利範圍第1項之氣體放電雷射系統,其中之放 電雷射系統為ArF、激態分子雷射系統,以及其雷射氣 體’係由氬氣、氟氣和氖氣所構成。 83 (21()X297公楚) .如申請專利範圍第旧之氣體放電雷射系統,其中之放 5電雷射系統為F2,以及係包括氟氣和一緩衝氣體。 •如申請專利範圍第1項之氣體放電雷射系統,其中之放 電在其放電區域之上游,亦包括_葉片結構,其可 正常化其放電區域上游之氣體速度。 6·如申請專利範圍第!項之氣體放電雷射系統,其中之風 ▽扇’係包括一受到兩個無電刷Dc馬達之驅動的軸桿。 7·如申請專利範圍第6項之氣體放電雷射系統,其中之馬 達係一些水冷式馬達。 8·如申請專利範圍第6項之氣體放電雷射系統,其中之每 、馬達,係包括一定子,以及每一該等馬達,係包括一 =轉子,其係裝在-可使其定子與雷射氣體相之壓力罩 盡》内。 9. 如申請專利範圍第6項之氣體放電雷射系統其中之切 向風扇,係包括一機製自鋁製材質之葉片結構。 10. 如申請專利範圍第9項之氣體放電雷射系統,其中之葉 片結構,係具有一大約五吋之外徑。 11·如申請專利範圍第6項之氣體放電雷射系統,其中之馬 達係些無感測器馬達,以及係進一步包括一可控制 该等馬達中之一的主控馬達控制器,和一可控制其他馬 達之從動馬達控制器。 12·如申請專利範圍第i項之氣體放電雷射系統,其中具有 散熱片之熱交換器系統係水冷式。 13.如申請專利範圍第12項之氣體放電雷射系統,其中之熱 申請專利範圍 量交換器系統,係包括至少四個獨立水冷式熱交換器。 14·如申請專利範圍第12項之氣體放電雷射系統,其中之熱 量交換器系、统,係包括至少一具有一管狀水流通道之熱 交換器,其中至少之一湍流器係位於該路徑中。 I5.如申請專利範圍第13項之氣體放電雷射系統,其中之每 ―四個熱交換器,係、包括一内含一滿流器之管狀水流通 道。 16·如申請專利範圍第1項之氣體放電雷射系統,其中之脈 波電力系統,係包括一些水冷式電氣組件。 P·如申請專利範圍第16項之氣體放電雷射系統,其中至少 一水冷式組件,係一運作於超過12,000伏特之高電壓下 的組件。 18·如申請專利範圍第17項之氣體放電雷射系統,其中之高 電壓,係使用一其中流有冷卻水之電感器與接地端相隔 離。 19·如申請專利範圍第1項之氣體放電雷射系統,其中之脈 波電力系統,係包括一共振充電系統,其可使一充電電 容器,充電至一受到精確控制之電壓。 20·如申請專利範圍第19項之氣體放電雷射系統,其中之共 振充電系統’係包括一去Q電路。 21·如申請專利範圍第19項之氣體放電雷射系統,其中之共 振充電系統,係包括一分電電路。 22·如申請專利範圍第19項之氣體放電雷射系統,其中之共 振充電系統,係包括一去Q電路和一分電電路。6. Scope of Patent Application 1. A gas discharge laser system with extremely high repetition rate, which can operate at a pulse wave repetition rate of more than 4,000 pulses per second. This type of laser system includes: A) — contains one Laser gas and laser discharge chamber with two elongated electrodes, which can define a discharge area, B)-prostitute fan system, which can generate laser gas with sufficient gas velocity in the above discharge area, so that When operating at a repetition rate in the range of 6,000 pulses per second or more, immediately after each pulse, before the next pulse, the discharge area from the discharge area is substantially cleared. All ions, C) a thermal parent converter system, which can remove at least 16 kw of thermal energy from the laser gas described above, D) a pulse wave power system, which can provide some electrical pulse waves to the configuration Electrode, sufficient to generate laser pulses with precisely controlled pulse energy in the range of approximately 5 mJ at a rate of approximately 6,000 pulses per second, and E) a laser beam measurement Cum control system, which can pulse energy and wave The feedback control, or to measure the pulse wave of each pulse energy substantially, wavelength, and bandwidth of each pulse. 2. If the gas discharge laser system of item 1 of the patent application scope, wherein the discharge laser system is KrF, excimer laser system, and its laser gas is composed of radon gas, fluorine gas and neon gas . 3. The gas discharge laser system according to item 1 of the patent application scope, wherein the discharge laser system is ArF, the excimer laser system, and the laser gas is composed of argon, fluorine and neon. . 83 (21 () X297). For example, the oldest gas discharge laser system in the scope of patent application, of which the electric laser system is F2, and it includes fluorine gas and a buffer gas. • If the gas discharge laser system in the scope of patent application No.1, the discharge of which is upstream of its discharge area, it also includes a _blade structure, which can normalize the gas velocity upstream of its discharge area. 6 · If the scope of patent application is the first! The gas discharge laser system of the item, in which the wind ▽ fan 'comprises a shaft driven by two brushless DC motors. 7. If the gas discharge laser system of item 6 of the patent application, the motors are some water-cooled motors. 8. If the gas-discharge laser system of item 6 of the scope of the patent application, each of the motors includes a stator, and each of these motors includes a rotor, which is mounted on-which can make its stator and "Laser gas phase pressure shield". 9. The tangential fan of the gas discharge laser system in item 6 of the patent application includes a blade structure made of aluminum. 10. The gas discharge laser system of item 9 of the patent application, wherein the blade structure has an outer diameter of about five inches. 11. The gas discharge laser system according to item 6 of the patent application, wherein the motor is a sensorless motor, and further includes a main control motor controller that can control one of the motors, and a Slave motor controller for controlling other motors. 12. The gas discharge laser system according to item i of the patent application range, wherein the heat exchanger system with fins is water-cooled. 13. The gas discharge laser system according to item 12 of the patent application, wherein the heat of the patent application includes a volume exchanger system including at least four independent water-cooled heat exchangers. 14. The gas discharge laser system according to item 12 of the patent application, wherein the heat exchanger system includes at least one heat exchanger having a tubular water flow channel, and at least one turbulent system is located in the path . I5. The gas discharge laser system according to item 13 of the scope of the patent application, wherein each of the four heat exchangers is a tubular water flow channel including a full flow device. 16. The gas discharge laser system according to item 1 of the scope of patent application, wherein the pulse wave power system includes some water-cooled electrical components. P. For example, the gas discharge laser system of the patent application No. 16 wherein at least one water-cooled module is a module operating at a high voltage exceeding 12,000 volts. 18. The gas discharge laser system according to item 17 of the scope of patent application, wherein the high voltage is separated from the ground by an inductor in which cooling water flows. 19. The gas discharge laser system according to item 1 of the scope of the patent application, wherein the pulse wave power system includes a resonance charging system, which can charge a charging capacitor to a voltage that is precisely controlled. 20. The gas discharge laser system according to item 19 of the patent application scope, wherein the resonance charging system 'includes a Q-removing circuit. 21. The gas discharge laser system according to item 19 of the patent application scope, wherein the resonance charging system includes a power distribution circuit. 22. The gas discharge laser system according to item 19 of the patent application scope, wherein the resonance charging system includes a Q-removing circuit and a power distribution circuit. 23. 如申請專利範圍第!項之氣體放電雷射系統,其中之脈 波電力系統,係包括一充電系統,其係由至少三個並聯 排列之電源供應器。 24. 如申凊專利範圍第丨項之氣體放電雷射系統,其中之雷 射光束測量暨控制系統,係包括一標準具單元、一發光 二極體陣列、一可程式化邏輯裝置、和一些可使來自其 標準具單元之雷射光波聚焦在其發光二極體陣列上面 的光學器件,其中之可程式化邏輯裝置,可加以程式規 劃,以便分析來自其發光二極體陣列之資料,而決定彼 1〇 等標準具條紋在其發光二極體陣列上面之位置。 25·如申請專利範圍第24項之氣體放電雷射系統,其中之測 量暨控制系統,亦包括一微處理器,其可加以程式規 劃,以便自其可程式化邏輯裝置所定位之條紋資料,計 真出波長和頻寬。 26. 如申请專利範圍第24項之氣體放電雷射系統,其中之可 私式化邏輯裝置,可以一演算法來加以程式規劃,以便 基於該等條紋之測量值,來計算波長和頻寬。 27. 如申請專利範圍第26項之氣體放電雷射系統,其中之可 程式化邏輯裝置在配置上,可在快於丨/⑺…⑼秒下做波 20 長和頻寬之計算。 28·如申請專利範圍第26項之氣體放電雷射系統,其中之標 準具單元,係由一繞射性擴散元件所構成。 29.如申請專利範圍第1項之氣體放電雷射系統,以及係進 一步包括一由一至少部份受到一 PZT驅動器之驅動的23. Such as the scope of patent application! The gas discharge laser system of the item, wherein the pulse power system includes a charging system, which is composed of at least three power supplies arranged in parallel. 24. For example, the gas discharge laser system in the scope of the patent application, the laser beam measurement and control system includes an etalon unit, a light emitting diode array, a programmable logic device, and An optical device that enables the laser light wave from its etalon unit to focus on its light emitting diode array. The programmable logic device can be programmed to analyze the data from its light emitting diode array. Determine the position of the 10th etalon stripe on its light-emitting diode array. 25. If the gas discharge laser system of the 24th scope of the patent application, the measurement and control system therein also includes a microprocessor, which can be programmed to facilitate the stripe data located by its programmable logic device Calculate the true wavelength and bandwidth. 26. For the gas discharge laser system in the scope of patent application No. 24, the privatizable logic device can be programmed with an algorithm to calculate the wavelength and bandwidth based on the measured values of these stripes. 27. For the gas discharge laser system in the scope of patent application No. 26, the programmable logic device in the configuration can be used to calculate the wave length and bandwidth in faster than 丨 / ⑺ ... leap second. 28. The gas discharge laser system according to item 26 of the patent application, wherein the standard tool unit is composed of a diffractive diffusing element. 29. The gas discharge laser system according to item 1 of the scope of patent application, and further comprising a device driven by a PZT driver at least partially A8 B8 C8 D8A8 B8 C8 D8 申請專利範圍Patent application scope 调制面鏡所構成之線窄化單元。 3〇·如申請專利範圍第29項之氣體放電雷射系統,其中之調 制面鏡,亦係部份受到一步進馬達之驅動。 5 31·如申請專利範圍第29項之氣體放電雷射系統,以及係進 一步包括一預調制器。 32·如申請專利範圍第29項之氣體放電雷射系統,以及係進 一步包括一主動調制器,其係包括一學習演算法。 裝、 33. 如申請專利範圍第29項之氣體放電雷射系統,以及係進 一步包括一適性前饋演算法。 訂 34. 如申請專利範圍第29項之氣體放電雷射系統,其中之線 乍化單το,係包括一可界定一光柵面之光柵,和一可迫 使淨化氣體鄰近此光栅面之淨化器。 35. 如申請專利範圍第34項之氣體放電雷射系統,其中之淨 化氣體為氮氣。 , 線 36. 如申請專利範圍第34項之氣體放電雷射系統,其中之淨 化氣體為氦氣。 37. 如申請專利範圍第丨項之氣體放電雷射系統,以及係進 一步包括一氮氣淨化系統,其係包括一由一氮氣過濾器 所組成之氮氣淨化系統。 20 38·如申請專利範圍第1項之氣體放電雷射系統,以及係進 一步包括一氮氣淨化模組,其係包括一些流量監控器, 此雷射係包括一些可來輸送出自其雷射氣體之排放氣 體的淨化排氣管。 39·如申請專利範圍第丨項之氣體放電雷射系統,以及係進 本紙狀中關家標準(CNS) A4規格UlGX297公楚丁 87A line narrowing unit composed of a modulation mirror. 30. If the gas discharge laser system according to item 29 of the patent application scope, the adjustment mirror is also partially driven by a stepping motor. 5 31. The gas discharge laser system according to item 29 of the patent application, and further comprising a pre-modulator. 32. The gas discharge laser system according to item 29 of the patent application, and further comprising an active modulator, which includes a learning algorithm. 33. For example, the gas discharge laser system in the scope of patent application No. 29, and the system further includes an adaptive feedforward algorithm. Revision 34. If the gas discharge laser system of item 29 of the patent application scope, the linearization unit το includes a grating that can define a grating surface, and a purifier that can force the purification gas to be adjacent to the grating surface. 35. If the gas discharge laser system of item 34 of the patent application scope, the purified gas is nitrogen. Line 36. If the gas discharge laser system of item 34 of the patent application scope, the purification gas is helium. 37. The gas discharge laser system according to the scope of the patent application, and further comprising a nitrogen purifying system, which includes a nitrogen purifying system composed of a nitrogen filter. 20 38. The gas discharge laser system according to item 1 of the scope of patent application, and further includes a nitrogen purifying module, which includes some flow monitors, and the laser system includes some which can be used to transport the laser gas from it. Exhaust gas purifying exhaust pipe. 39. For example, the gas discharge laser system in the scope of the patent application, and the paper-like Zhongguanjia Standard (CNS) A4 specification UlGX297 Gong Chuding 87 vI括光閥單元,其係包括一電氣運作之光閥,和 j 匕 yv θ令仏说定位進一雷射輸出光束路徑之瓦特 表。 5 申明專利範圍第29項之氣體放電雷射系統,以及係進 ,匕括光束後、封系統,其可在其放電室之第一窗口 二線乍化單元間,提供一第一光束密封,以及在其放電 2之第二窗口與一輸出耦合器單元間,提供一第二光束 密封,每一此等光束密封,係包括一金屬製伸縮囊。 1〇 如申明專利範圍第40項之氣體放電雷射系統,其中之每 第一和第二光束密封在配置上,可容許其雷射放電室 能輕易被更換。 42·如申請專利範圍第4Q項之氣體放電雷射系統,其中之每 光束密封,係不含彈性體,可提供與其放電室之振動 隔離,可使光束列與大氣體氣體相隔離,以及可容許不 又限地更換其雷射放電室,而不必干擾到其LNP或輸出 輕合器單元。 43·如申請專利範圍第丨項之氣體放電雷射系統,其中之測 量暨控制系統係包括:一初次分光器,其可自上述之雷 射’分離出一小百分比之輸出脈波;一第二分光器,其 20 可將上述小百分比之一部份,導引至其脈波能量偵測 器,和一工具’其可使一包圍該等初次級分光器、第二 分光器、和其脈波能量伯測器之一窗口的容積,與此測 量暨控制系統之其他部分相隔離,藉以界定出一隔離區 域。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚)." I~~7- 1厶年(ο月,Q G正' __^ 補充 申請專利範圍 44. ^申請專利範圍第43項之氣體放電雷射系統,以及係進 V L括T K匕氣體來淨化該隔離區域之 32 TIL·* 1§ 0 45. 如申請專利範圍第44項之氣體放電雷射系統,其中之雷 射’係進一步包括一輸出麵合器單元,和一輸出窗口單 几,其淨化器在配置上,可使其出自該隔離區域之排 氣’亦可用以淨化該等輸出輕合器單元和輸出窗口單 元。 46·如申請專利範圍第旧之氣體放電雷射系統,其中之放 電室,亦包括-電流回路,其具有一些呈一般矩形之截 面的肋片’彼等之長形方向,係在其雷射氣體流動之方 向中。 C如申請專利範圍第旧之氣體放電雷射系統,其中之放 電室,係包括一陽極和一些位於此陽極兩側上面之介電 質隔片,藉以改良其兩電極間之區域内的雷射氣流。 级如申請專利範圍第旧之氣體放電雷射系統,其中之脈 波電力系統,係包括一電暈板,其係藉由一些金屬棒, 以電氣方式連接至一波峰電容器排組之電容器,和該等 電極中的一個,該等金屬棒在長度上係經選擇,以便能 提供加增之電感。 49·如申請專利範圍第1項之氣體放電雷射系統,其中之放 電區域,可界定出一平均寬度,以及該等電極在配置 上’可限定此平均寬度使小於2 mm 〇 50.如申请專利範圍第49項之氣體放電雷射系統,其中之每The vI includes a light valve unit, which includes an electrically operated light valve and a wattmeter that is positioned into a laser output beam path. 5 The gas discharge laser system of claim 29 and the system for enclosing and closing the beam, which can provide a first beam seal between the first window and the second line of the discharge chamber of the discharge chamber, A second beam seal is provided between the second window of the discharge 2 and an output coupler unit, and each of these beam seals includes a metal telescoping bag. 10 If the gas discharge laser system of claim 40 is patented, each of the first and second beams is sealed in the configuration, allowing the laser discharge chamber to be easily replaced. 42. If the gas discharge laser system of the scope of patent application No. 4Q, each beam is sealed and does not contain an elastomer, which can provide vibration isolation from its discharge chamber, which can isolate the beam array from large gasses, and can Allows unlimited replacement of its laser discharge chamber without disturbing its LNP or output light-coupler unit. 43. If the gas discharge laser system according to the scope of the patent application, the measurement and control system includes: a primary beam splitter, which can separate a small percentage of the output pulse from the laser; Two beam splitters, 20 of which can direct a small percentage of the above, to their pulse energy detector, and a tool 'which enables a primary beam splitter, a second beam splitter, and its The volume of a window of the pulse energy primary detector is isolated from other parts of this measurement and control system, thereby defining an isolated area. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). &Quot; I ~~ 7- 1 year (ο month, QG positive '__ ^ Supplementary patent application scope 44. ^ Patent application scope item 43 Gas discharge laser system, and 32 TIL · * 1§ 0 45 which is purged by VL including TK gas to purify the isolation area. 45. For example, the gas discharge laser system of the 44th scope of the patent application, the laser system is It further includes an output surface coupler unit and an output window unit. The purifier is configured so that the exhaust gas from the isolated area can also be used to purify the output light coupler unit and the output window unit. 46 · If the oldest gas discharge laser system in the scope of the patent application, the discharge chamber also includes a current circuit, which has some ribs with a generally rectangular cross section 'their elongated directions are tied to their lasers In the direction of the gas flow. C. For example, the oldest gas discharge laser system in the scope of the patent application, wherein the discharge chamber includes an anode and dielectric spacers on both sides of the anode, so as to improve the space between the two electrodes. Laser airflow in the area. The oldest gas-discharge laser system, such as the patent application scope, in which the pulsed power system includes a corona plate, which is electrically connected to a wave crest by some metal rods. The capacitors of the capacitor bank, and one of the electrodes, the metal rods are selected in length so as to provide an increased inductance. 49. The gas discharge laser system of item 1 in the scope of patent application, where The discharge area can be defined by an average width, and the configuration of the electrodes can be limited to an average width of less than 2 mm. 50. For example, the gas discharge laser system of the 49th scope of the patent application, each of which 申請專利範圍 電極’可界定出一放電表面,以及至少有一電極係由 一其放電表面被一具有多數放電孔之絕緣材料所覆蓋 的導體所構成。 51·如申請專利範圍第5〇項之氣體放電雷射系統,其中之係 呈直徑範圍為50至200微米之大致圓形的孔。 52·如申請專利範圍第51項之氣體放電雷射系統,其中之直 徑大約為100微米。 53·如申請專利範圍第5〇項之氣體放電雷射系統,其中之兩 者電極,係使彼等之放電表面,覆以一具有多數放電孔 之絕緣材料。 54·如申請專利範圍第50項之氣體放電雷射系統,其中之絕 緣材料係氧化鋁。 55·如申請專利範圍第1項之氣體放電雷射系統,其中之熱 父換器系統,係包括至少一具有散熱片之水冷式熱交換 器,其係具有雙通道冷卻水流方向,每一管内之水流方 向’係與另一管内之方向相反。 56. 如申請專利範圍第丨項之氣體放電雷射系統,其中之熱 交換器系統,係包括至少一具有散熱片之水冷式熱交換 器,和一包括一比例閥和一快速動作式數位離合閥之水 流量控制系統。 57. 如申請專利範圍第旧之氣體放電雷射系統,其中之熱 交換器线,係由-單體熱交換^所構成,其係'藉由在 部份之放電室内機製出一些冷卻散熱片而被建立成。 5&如申請專利範圍第57項之氣體放電雷射系統,其中 ‘申請專利範圍 體熱交換11,係包括多數與該等冷卻散熱>{成熱接觸之 冷卻管。 59·如申請專利範圍第W之氣體放電雷射系統,以及係進 V已括由整體成形在一局電塵絕緣體内之長形 導體所構成的預電離器,該導體在位置上係緊鄰及平行 该等長形電極中的一個。 60·如申請專利範圍第丨項之氣體放電雷射系統,以及係進 一步包括一吸力器,其係在至少一長形電極之下游,可 用以改良其放電區域内之雷射氣體流量。 61·如申請專利範圍第丨項之氣體放電雷射系統,以及係進 步包括一用以支撐其鼓風機之一軸桿的陶瓷質軸承。 62·如申請專利範圍第61項之氣體放電雷射系統,其中之陶 究質軸承,係包括一些陶瓷定位圈。 63.如申請專利範圍第61項之氣體放電雷射系統,其中之陶 瓷質軸承係包括:一無定位圈槽板、一些陶瓷滾珠軸 承、和一些直徑小於陶瓷滾珠軸承之隔離滾珠。 64·如申請專利範圍第1項之氣體放電雷射系統,其中之鼓 風機系統,係包括一注入式循環器,其中,在其放電室 内,有一部份雷射氣體流.,會自其放電室被抽出,而被 加壓及注射回至其放電室内,藉以產生一循環之雷射氣 體流。 65.如申請專利範圍第1項之氣體放電雷射系統,其中之鼓 風機系統,係包括一在其雷射放電室外部之鼓風機。 66·如申請專利範圍第65項之氣體放電雷射系統,其中之熱 573389Scope of patent application The electrode 'may define a discharge surface, and at least one electrode system is composed of a conductor whose discharge surface is covered with an insulating material having a plurality of discharge holes. 51. The gas discharge laser system according to item 50 of the patent application, wherein the system is a substantially circular hole having a diameter ranging from 50 to 200 m. 52. The gas discharge laser system according to item 51 of the patent application, wherein the diameter is about 100 microns. 53. In the case of a gas discharge laser system of the scope of application for patent No. 50, two of the electrodes are such that their discharge surfaces are covered with an insulating material having a plurality of discharge holes. 54. The gas discharge laser system of claim 50, wherein the insulating material is alumina. 55. The gas discharge laser system as described in the first item of the patent application scope, wherein the thermal parent converter system includes at least one water-cooled heat exchanger with fins, which has a dual-channel cooling water flow direction. The direction of water flow 'is opposite to that in the other tube. 56. For example, the gas discharge laser system of the scope of patent application, wherein the heat exchanger system includes at least a water-cooled heat exchanger with fins, and a proportional valve and a fast-acting digital clutch Valve water flow control system. 57. For example, the oldest gas discharge laser system in the scope of the patent application, where the heat exchanger line is composed of a single unit heat exchange ^, which is made by cooling some heat sinks in a part of the discharge chamber. And was built into. 5 & For example, the gas discharge laser system of the 57th in the scope of patent application, where ‘the scope of the patent application, the body heat exchange11, includes most of the cooling tubes that are in thermal contact with the cooling > 59. For example, the gas discharge laser system W in the scope of the patent application, and the pre-ionizer that has been incorporated into a long conductor integrally formed in an electric dust insulator, the conductor is located next to and Parallel one of the elongated electrodes. 60. The gas discharge laser system according to the scope of the patent application, and further comprising a suction device, which is downstream of at least one long electrode, can be used to improve the laser gas flow in the discharge area. 61. The gas discharge laser system according to the scope of the patent application, and further comprising a ceramic bearing for supporting a shaft of one of its blowers. 62. The gas discharge laser system according to item 61 of the patent application, wherein the ceramic bearing includes some ceramic positioning rings. 63. The gas discharge laser system according to item 61 of the patent application, wherein the ceramic bearing system includes: a non-locating ring groove plate, some ceramic ball bearings, and some isolated balls with a diameter smaller than that of the ceramic ball bearings. 64. If the gas discharge laser system of the first patent application scope, the blower system includes an injection circulator, in which a part of the laser gas flow in the discharge chamber, will be from the discharge chamber. It is drawn out, pressurized and injected back into its discharge chamber, thereby generating a circulating laser gas flow. 65. The gas discharge laser system according to item 1 of the patent application scope, wherein the blower system includes a blower outside the laser discharge chamber. 66. If the gas discharge laser system of the scope of patent application No. 65, the heat of which is 573389 申請專利範圍 父換器系統’係包括一與其鼓風機協同定位之熱交換 器。 67·如申請專利範圍第65項之氣體放電雷射系統,其中之熱 交換器系統,係包括一在其雷射放電室内部之熱交換 器。 .、 68·如申請專利範圍第1項之氣體放電雷射系統,其中之鼓 風機系統,係由一受到一水輪機驅動器之驅動的鼓風機 所構成。 裝 69·如申請專利範圍第68項之氣體放電雷射系統,其中之水 輪機驅動器,係包括一磁感聯結器,其可使其水輪驅動 力’耦合至一雷射氣體鼓風機之軸桿。 訂 線 本紙張尺度適用中11縣標準(CNS) A4規格(210X2974^] 二—92一ΓPatent Application Scope The parent switch system 'includes a heat exchanger co-located with its blower. 67. The gas discharge laser system according to item 65 of the patent application, wherein the heat exchanger system includes a heat exchanger inside the laser discharge chamber. . 68. The gas discharge laser system according to item 1 of the patent application scope, wherein the blower system is composed of a blower driven by a turbine driver. Installation 69. The gas discharge laser system according to item 68 of the patent application, wherein the hydraulic turbine driver includes a magnetic coupling which can couple its driving force to the shaft of a laser gas blower. Alignment The paper size is applicable to the 11-county standard (CNS) A4 specification (210X2974 ^) II—92 一 Γ
TW91119520A 2001-08-29 2002-08-28 Six to ten KHz, or greater gas discharge laser system TW573389B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/029,319 US6765946B2 (en) 2000-01-25 2001-10-17 Fan for gas discharge laser
US10/012,002 US6625191B2 (en) 1999-12-10 2001-11-30 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/036,676 US6882674B2 (en) 1999-12-27 2001-12-21 Four KHz gas discharge laser system
US10/141,216 US6693939B2 (en) 2001-01-29 2002-05-07 Laser lithography light source with beam delivery

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI821123B (en) * 2020-12-22 2023-11-01 美商希瑪有限責任公司 Pulse power circuit for supplying pulses to laser chamber, inductor comprising saturable magnetic core, inductor, and laser system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI821123B (en) * 2020-12-22 2023-11-01 美商希瑪有限責任公司 Pulse power circuit for supplying pulses to laser chamber, inductor comprising saturable magnetic core, inductor, and laser system

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