JP2005500653A5 - - Google Patents
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- Publication number
- JP2005500653A5 JP2005500653A5 JP2003521064A JP2003521064A JP2005500653A5 JP 2005500653 A5 JP2005500653 A5 JP 2005500653A5 JP 2003521064 A JP2003521064 A JP 2003521064A JP 2003521064 A JP2003521064 A JP 2003521064A JP 2005500653 A5 JP2005500653 A5 JP 2005500653A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- transfer layer
- disposed
- receptor
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 2
- 239000000412 dendrimer Substances 0.000 claims 1
- 229920000736 dendritic polymer Polymers 0.000 claims 1
- 239000011263 electroactive material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 150000007530 organic bases Chemical class 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
Claims (2)
- 第1の電極と、
第2の電極と、
前記第1および第2の電極の間に配置され、発光ポリマーが内部に配置された非晶質、非重合の有機母材を含む発光層と、を含む、エレクトロルミネセンス素子。 - 有機エレクトロルミネセンス表示又は素子の製造方法であって、
基材および前記基材上に配置された転写層を含むドナーシートを提供する工程であって、前記転写層が非晶質、非重合の有機発光デンドリマー及び電気活性材料を含むものである、工程と、
受容体を提供する工程と、
前記転写層の少なくとも一部分を前記受容体に熱転写する工程と、を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/931,598 US6699597B2 (en) | 2001-08-16 | 2001-08-16 | Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein |
US10/208,910 US7445825B2 (en) | 2001-08-16 | 2002-07-30 | Donor sheet having a polymerizable, amorphous matrix with electrically active material disposed therein |
PCT/US2002/026043 WO2003017732A1 (en) | 2001-08-16 | 2002-08-15 | Method and materials for patterning of a polymerizable, amorphous matrix with electrically active material disposed therein |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009266834A Division JP2010045051A (ja) | 2001-08-16 | 2009-11-24 | 電気活性材料が内部に配置された重合性非晶質母材のパターン化方法および材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005500653A JP2005500653A (ja) | 2005-01-06 |
JP2005500653A5 true JP2005500653A5 (ja) | 2006-01-05 |
Family
ID=26903626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003521064A Withdrawn JP2005500653A (ja) | 2001-08-16 | 2002-08-15 | 電気活性材料が内部に配置された重合性非晶質母材のパターン化方法および材料 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060008577A1 (ja) |
EP (1) | EP1417866A1 (ja) |
JP (1) | JP2005500653A (ja) |
CN (1) | CN1541504A (ja) |
MX (1) | MXPA04001412A (ja) |
SG (1) | SG135973A1 (ja) |
TW (1) | TW575653B (ja) |
WO (1) | WO2003017732A1 (ja) |
Families Citing this family (17)
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US6699597B2 (en) | 2001-08-16 | 2004-03-02 | 3M Innovative Properties Company | Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein |
KR100667062B1 (ko) | 2003-11-29 | 2007-01-10 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자 |
KR100579191B1 (ko) | 2004-02-24 | 2006-05-11 | 삼성에스디아이 주식회사 | 열전사 소자 |
JP5533796B2 (ja) * | 2004-11-17 | 2014-06-25 | 宇部興産株式会社 | 有機エレクトロルミネッセンス素子 |
KR20070097085A (ko) * | 2004-12-30 | 2007-10-02 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 조사를 사용하는 장치 패턴화 |
KR100700654B1 (ko) * | 2005-02-22 | 2007-03-27 | 삼성에스디아이 주식회사 | 레이저 조사 장치 및 레이저 열 전사법 |
KR101174871B1 (ko) * | 2005-06-18 | 2012-08-17 | 삼성디스플레이 주식회사 | 유기 반도체의 패터닝 방법 |
KR101223718B1 (ko) * | 2005-06-18 | 2013-01-18 | 삼성디스플레이 주식회사 | 나노 도전성 막의 패터닝 방법 |
EP2007843B1 (en) * | 2006-04-03 | 2009-12-02 | Philips Intellectual Property & Standards GmbH | Organic electroluminescent device |
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DE102007044872A1 (de) * | 2007-09-20 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Polymere Licht-emittierende Diode und Verfahren zu deren Herstellung |
WO2009107548A1 (en) | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
US8182863B2 (en) | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
KR20110041441A (ko) * | 2008-07-18 | 2011-04-21 | 후지필름 가부시키가이샤 | 테트라페닐메탄 골격을 복수 갖는 화합물, 막 형성용 조성물, 절연막 및 전자 디바이스 |
JP5677583B2 (ja) * | 2010-11-26 | 2015-02-25 | ▲海▼洋王照明科技股▲ふん▼有限公司 | 有機エレクトロルミネセンスデバイス及びその製造方法 |
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-
2002
- 2002-08-15 MX MXPA04001412A patent/MXPA04001412A/es active IP Right Grant
- 2002-08-15 JP JP2003521064A patent/JP2005500653A/ja not_active Withdrawn
- 2002-08-15 EP EP02757152A patent/EP1417866A1/en not_active Withdrawn
- 2002-08-15 WO PCT/US2002/026043 patent/WO2003017732A1/en active Application Filing
- 2002-08-15 CN CNA028159454A patent/CN1541504A/zh active Pending
- 2002-08-15 SG SG200600842-9A patent/SG135973A1/en unknown
- 2002-08-16 TW TW91118409A patent/TW575653B/zh not_active IP Right Cessation
-
2005
- 2005-09-06 US US11/220,148 patent/US20060008577A1/en not_active Abandoned
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