JP2005336617A - スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 - Google Patents
スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 Download PDFInfo
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- JP2005336617A JP2005336617A JP2005157486A JP2005157486A JP2005336617A JP 2005336617 A JP2005336617 A JP 2005336617A JP 2005157486 A JP2005157486 A JP 2005157486A JP 2005157486 A JP2005157486 A JP 2005157486A JP 2005336617 A JP2005336617 A JP 2005336617A
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- thermal plasma
- melting point
- sputtering
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- 239000000843 powder Substances 0.000 title claims abstract description 119
- 239000000463 material Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000002844 melting Methods 0.000 title abstract description 22
- 230000008018 melting Effects 0.000 title abstract description 21
- 229910052751 metal Inorganic materials 0.000 title abstract description 14
- 239000002184 metal Substances 0.000 title abstract description 14
- 238000004544 sputter deposition Methods 0.000 title description 10
- 238000005245 sintering Methods 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 28
- 239000003870 refractory metal Substances 0.000 claims description 25
- 238000005477 sputtering target Methods 0.000 claims description 20
- 238000007670 refining Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 13
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 239000000956 alloy Substances 0.000 abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 5
- 230000002706 hydrostatic effect Effects 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 34
- 238000009832 plasma treatment Methods 0.000 description 22
- 239000002994 raw material Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000012856 packing Methods 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- -1 hydrogen ions Chemical class 0.000 description 2
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- 238000005259 measurement Methods 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000026045 iodination Effects 0.000 description 1
- 238000006192 iodination reaction Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 238000009700 powder processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005563 spheronization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Manufacture And Refinement Of Metals (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005157486A JP2005336617A (ja) | 2005-05-30 | 2005-05-30 | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005157486A JP2005336617A (ja) | 2005-05-30 | 2005-05-30 | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11192994A Division JP2001020065A (ja) | 1999-07-07 | 1999-07-07 | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005336617A true JP2005336617A (ja) | 2005-12-08 |
| JP2005336617A5 JP2005336617A5 (enExample) | 2006-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005157486A Pending JP2005336617A (ja) | 2005-05-30 | 2005-05-30 | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005336617A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008223061A (ja) * | 2007-03-09 | 2008-09-25 | Asahi Pretec Corp | ルテニウム粉末の製造方法 |
| WO2010134417A1 (ja) * | 2009-05-22 | 2010-11-25 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
| WO2011071225A1 (ko) * | 2009-12-07 | 2011-06-16 | 주식회사 풍산 | 열플라즈마를 이용한 고순도 구리분말의 제조방법 |
| WO2013080801A1 (ja) * | 2011-11-30 | 2013-06-06 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| CZ304629B6 (cs) * | 2006-06-22 | 2014-08-13 | Ăšstav fyziky plazmatu AV ÄŚR, v.v.i. | Způsob přípravy wolframových a wolframkarbidových filtrů k filtracím za vysokých teplot |
| US9845528B2 (en) | 2009-08-11 | 2017-12-19 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| CN111618301A (zh) * | 2020-06-05 | 2020-09-04 | 西安建筑科技大学 | 一种激光选区熔化制备中碳钢的工艺 |
| KR20200124273A (ko) * | 2018-03-05 | 2020-11-02 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 분말 야금 스퍼터링 표적 및 그의 생성 방법 |
| CN111872406A (zh) * | 2020-07-21 | 2020-11-03 | 河南能微新材料科技股份有限公司 | 一种电感耦合等离子体粉体生产设备及生产工艺 |
| KR20200125668A (ko) * | 2018-03-05 | 2020-11-04 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 탄탈럼 분말, 그를 함유하는 생성물, 및 그의 제조 방법 |
| CN111893325A (zh) * | 2019-12-30 | 2020-11-06 | 宁夏东方钽业股份有限公司 | 一种高纯钽锭及其制备方法 |
| JP2021515846A (ja) * | 2018-03-05 | 2021-06-24 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状粉末含有陽極及びコンデンサ |
-
2005
- 2005-05-30 JP JP2005157486A patent/JP2005336617A/ja active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CZ304629B6 (cs) * | 2006-06-22 | 2014-08-13 | Ăšstav fyziky plazmatu AV ÄŚR, v.v.i. | Způsob přípravy wolframových a wolframkarbidových filtrů k filtracím za vysokých teplot |
| JP2008223061A (ja) * | 2007-03-09 | 2008-09-25 | Asahi Pretec Corp | ルテニウム粉末の製造方法 |
| WO2010134417A1 (ja) * | 2009-05-22 | 2010-11-25 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
| JP5144760B2 (ja) * | 2009-05-22 | 2013-02-13 | Ｊｘ日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
| US10266924B2 (en) | 2009-05-22 | 2019-04-23 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| US9845528B2 (en) | 2009-08-11 | 2017-12-19 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
| WO2011071225A1 (ko) * | 2009-12-07 | 2011-06-16 | 주식회사 풍산 | 열플라즈마를 이용한 고순도 구리분말의 제조방법 |
| US9061353B2 (en) | 2009-12-07 | 2015-06-23 | Poongsan Corporation | Production method for high purity copper powder using a thermal plasma |
| WO2013080801A1 (ja) * | 2011-11-30 | 2013-06-06 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| JPWO2013080801A1 (ja) * | 2011-11-30 | 2015-04-27 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| JP2015206120A (ja) * | 2011-11-30 | 2015-11-19 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| KR20200125668A (ko) * | 2018-03-05 | 2020-11-04 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 탄탈럼 분말, 그를 함유하는 생성물, 및 그의 제조 방법 |
| KR102490248B1 (ko) * | 2018-03-05 | 2023-01-20 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 분말 야금 스퍼터링 표적 및 그의 생성 방법 |
| US12226827B2 (en) | 2018-03-05 | 2025-02-18 | Global Advanced Metals Usa, Inc. | Spherical tantalum powder, products containing the same, and methods of making the same |
| US12221678B2 (en) | 2018-03-05 | 2025-02-11 | Global Advanced Metals Usa, Inc. | Powder metallurgy sputtering targets and methods of producing same |
| JP2024045166A (ja) * | 2018-03-05 | 2024-04-02 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状タンタル粉末、それを含有する製品、及びその作製方法 |
| JP2021515106A (ja) * | 2018-03-05 | 2021-06-17 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 粉末冶金スパッタリングターゲット及びその製造方法 |
| JP2021515105A (ja) * | 2018-03-05 | 2021-06-17 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状タンタル粉末、それを含有する製品、及びその作製方法 |
| JP2021515846A (ja) * | 2018-03-05 | 2021-06-24 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状粉末含有陽極及びコンデンサ |
| US11508529B2 (en) | 2018-03-05 | 2022-11-22 | Global Advanced Metals Usa, Inc. | Anodes containing spherical powder and capacitors |
| KR20200124273A (ko) * | 2018-03-05 | 2020-11-02 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 분말 야금 스퍼터링 표적 및 그의 생성 방법 |
| KR102503996B1 (ko) * | 2018-03-05 | 2023-03-02 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 탄탈럼 분말, 그를 함유하는 생성물, 및 그의 제조 방법 |
| US11691197B2 (en) | 2018-03-05 | 2023-07-04 | Global Advanced Metals Usa, Inc. | Spherical tantalum powder, products containing the same, and methods of making the same |
| JP7383300B2 (ja) | 2018-03-05 | 2023-11-20 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 粉末冶金スパッタリングターゲット及びその製造方法 |
| JP7432927B2 (ja) | 2018-03-05 | 2024-02-19 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状粉末含有陽極及びコンデンサ |
| JP7448955B2 (ja) | 2018-03-05 | 2024-03-13 | グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド | 球状タンタル粉末、それを含有する製品、及びその作製方法 |
| CN111893325B (zh) * | 2019-12-30 | 2024-03-12 | 宁夏东方钽业股份有限公司 | 一种高纯钽锭及其制备方法 |
| CN111893325A (zh) * | 2019-12-30 | 2020-11-06 | 宁夏东方钽业股份有限公司 | 一种高纯钽锭及其制备方法 |
| CN111618301A (zh) * | 2020-06-05 | 2020-09-04 | 西安建筑科技大学 | 一种激光选区熔化制备中碳钢的工艺 |
| CN111872406A (zh) * | 2020-07-21 | 2020-11-03 | 河南能微新材料科技股份有限公司 | 一种电感耦合等离子体粉体生产设备及生产工艺 |
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