JP2005328047A5 - - Google Patents

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Publication number
JP2005328047A5
JP2005328047A5 JP2005134248A JP2005134248A JP2005328047A5 JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5 JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5
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Japan
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charged particle
exposure apparatus
particle beam
beam exposure
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JP2005134248A
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English (en)
Japanese (ja)
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JP2005328047A (ja
JP4843248B2 (ja
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Publication of JP4843248B2 publication Critical patent/JP4843248B2/ja
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JP2005134248A 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置 Expired - Fee Related JP4843248B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT7552004 2004-04-30
ATA755/2004 2004-04-30

Publications (3)

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JP2005328047A JP2005328047A (ja) 2005-11-24
JP2005328047A5 true JP2005328047A5 (https=) 2008-05-29
JP4843248B2 JP4843248B2 (ja) 2011-12-21

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JP2005134248A Expired - Fee Related JP4843248B2 (ja) 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置

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US (1) US7368738B2 (https=)
JP (1) JP4843248B2 (https=)
GB (1) GB2413694A (https=)

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US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
US9443699B2 (en) 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
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KR102389365B1 (ko) * 2014-06-13 2022-04-22 인텔 코포레이션 E 빔 범용 커터
CN106463352B (zh) * 2014-06-13 2020-06-19 英特尔公司 借助于电子束的层上单向金属
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JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
KR102459585B1 (ko) 2014-08-19 2022-10-27 인텔 코포레이션 E 빔 범용 커터를 이용한 교차 스캔 근접 보정
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US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR102835338B1 (ko) 2019-05-03 2025-07-17 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
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