JP2005294560A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2005294560A JP2005294560A JP2004108022A JP2004108022A JP2005294560A JP 2005294560 A JP2005294560 A JP 2005294560A JP 2004108022 A JP2004108022 A JP 2004108022A JP 2004108022 A JP2004108022 A JP 2004108022A JP 2005294560 A JP2005294560 A JP 2005294560A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 230000004224 protection Effects 0.000 claims abstract description 80
- 230000015556 catabolic process Effects 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
【解決手段】 本発明の半導体装置は、トランジスタを備えた第1回路部と、第1回路部と所定の電圧が印加される第2回路部とを接続するための端子部と、端子部と正電源との間において直列に接続された複数の第1保護部と、端子部と負電源との間において直列に接続された複数の第2保護部とを備える。また、別の実施形態では、本発明の半導体装置は、正電源および負電源のうちの一方と第1電圧が印加された電圧印加部との間において直列に接続された複数の第1保護部と、電圧印加部と端子部との間において直列に接続された複数の第2保護部とを備える。
【選択図】 図1
Description
しかし、内部トランジスタの耐圧(BVceoと同等の電圧)以上の電源電圧が外部から印加されることにより動作する出力バッファ回路においては、出力端子部OUTは外部電源電圧によってスイングする。このため、そのような出力バッファ回路に保護回路部を設ける場合には、その保護回路部の耐圧も外部電源電圧以上にしなければならない。
図1に、本発明の実施の形態1における半導体装置100を示す。
図4に、本発明の実施の形態2における半導体装置400を示す。
200 出力バッファ回路部
201、202 インバータ
203、204 レベルシフタ
250 外部回路部
Claims (11)
- トランジスタを備えた第1回路部と、
前記第1回路部と所定の電圧が印加される第2回路部とを接続するための端子部と、
前記端子部と正電源との間において直列に接続された複数の第1保護部と、
前記端子部と負電源との間において直列に接続された複数の第2保護部と
を備えた半導体装置。 - 前記所定の電圧は、前記トランジスタに印加された場合に、前記トランジスタの一端の電位と他端の電位との間の電位差が前記トランジスタの耐圧よりも大きくなる電圧である、請求項1に記載の半導体装置。
- 前記複数の第1保護部および前記複数の第2保護部のそれぞれの耐圧は、前記トランジスタの耐圧以上である、請求項1に記載の半導体装置。
- 前記複数の第1保護部および前記複数の第2保護部のそれぞれは、ダイオードである、請求項1に記載の半導体装置。
- 前記第1回路部は、出力バッファ回路部である、請求項1に記載の半導体装置。
- トランジスタを備えた第1回路部と、
前記第1回路部と所定の電圧が印加される第2回路部とを接続するための端子部と、
正電源および負電源のうちの一方と第1電圧が印加された電圧印加部との間において直列に接続された複数の第1保護部と、
前記電圧印加部と前記端子部との間において直列に接続された複数の第2保護部と
を備えた半導体装置。 - 前記電圧印加部は、前記正電源および前記負電源のうちの他方である、請求項6に記載の半導体装置。
- 前記所定の電圧は、前記トランジスタに印加された場合に、前記トランジスタの一端の電位と他端の電位との間の電位差が前記トランジスタの耐圧よりも大きくなる電圧である、請求項6に記載の半導体装置。
- 前記複数の第1保護部および前記複数の第2保護部のそれぞれの耐圧は、前記トランジスタの耐圧以上である、請求項6に記載の半導体装置。
- 前記複数の第1保護部および前記複数の第2保護部のそれぞれは、パンチスルーデバイスである、請求項6に記載の半導体装置。
- 前記第1回路部は、出力バッファ回路部である、請求項6に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004108022A JP4114751B2 (ja) | 2004-03-31 | 2004-03-31 | 半導体装置 |
US11/093,046 US20050219778A1 (en) | 2004-03-31 | 2005-03-30 | Semiconductor device |
CNB2005100717015A CN100481440C (zh) | 2004-03-31 | 2005-03-31 | 半导体器件 |
KR1020050027136A KR100713749B1 (ko) | 2004-03-31 | 2005-03-31 | 반도체 장치 |
TW094110310A TWI266390B (en) | 2004-03-31 | 2005-03-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004108022A JP4114751B2 (ja) | 2004-03-31 | 2004-03-31 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005294560A true JP2005294560A (ja) | 2005-10-20 |
JP4114751B2 JP4114751B2 (ja) | 2008-07-09 |
Family
ID=35050076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004108022A Expired - Fee Related JP4114751B2 (ja) | 2004-03-31 | 2004-03-31 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050219778A1 (ja) |
JP (1) | JP4114751B2 (ja) |
KR (1) | KR100713749B1 (ja) |
CN (1) | CN100481440C (ja) |
TW (1) | TWI266390B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153779A (ja) * | 2008-12-24 | 2010-07-08 | Magnachip Semiconductor Ltd | 静電気放電保護回路 |
JP2012256859A (ja) * | 2011-04-22 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4987292B2 (ja) * | 2005-12-20 | 2012-07-25 | ティーピーオー、ホンコン、ホールディング、リミテッド | 回路装置 |
ATE497651T1 (de) * | 2006-04-12 | 2011-02-15 | Nxp Bv | Elektronische schaltung |
EP2278712A1 (fr) * | 2009-07-01 | 2011-01-26 | STMicroelectronics (Rousset) SAS | Circuit intégré comprenant un circuit tampon haute tension large bande |
US11799482B2 (en) * | 2020-06-29 | 2023-10-24 | SK Hynix Inc. | Interface circuit and semiconductor output circuit device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5721658A (en) * | 1996-04-01 | 1998-02-24 | Micron Technology, Inc. | Input/output electrostatic discharge protection for devices with multiple individual power groups |
WO2000044049A1 (fr) * | 1999-01-19 | 2000-07-27 | Seiko Epson Corporation | Circuit de protection contre l'electricite statique, et circuit integre |
US6400541B1 (en) * | 1999-10-27 | 2002-06-04 | Analog Devices, Inc. | Circuit for protection of differential inputs against electrostatic discharge |
JP4037029B2 (ja) * | 2000-02-21 | 2008-01-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US6671153B1 (en) * | 2000-09-11 | 2003-12-30 | Taiwan Semiconductor Manufacturing Company | Low-leakage diode string for use in the power-rail ESD clamp circuits |
JP3956612B2 (ja) * | 2000-11-24 | 2007-08-08 | 住友電装株式会社 | 電界効果トランジスタの保護回路 |
EP1217662A1 (en) * | 2000-12-21 | 2002-06-26 | Universite Catholique De Louvain | Ultra-low power basic blocks and their uses |
KR100390155B1 (ko) * | 2000-12-30 | 2003-07-04 | 주식회사 하이닉스반도체 | Esd 보호회로 |
US6894324B2 (en) * | 2001-02-15 | 2005-05-17 | United Microelectronics Corp. | Silicon-on-insulator diodes and ESD protection circuits |
JP2003023084A (ja) | 2001-07-05 | 2003-01-24 | Matsushita Electric Ind Co Ltd | Esd保護回路 |
US6693780B2 (en) * | 2001-08-02 | 2004-02-17 | Koninklijke Philips Electronics N.V. | ESD protection devices for a differential pair of transistors |
US6580308B1 (en) * | 2002-06-27 | 2003-06-17 | Texas Instruments Incorporated | VDS protection for high voltage swing applications |
US7027276B2 (en) * | 2004-04-21 | 2006-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage ESD protection circuit with low voltage transistors |
-
2004
- 2004-03-31 JP JP2004108022A patent/JP4114751B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-30 US US11/093,046 patent/US20050219778A1/en not_active Abandoned
- 2005-03-31 TW TW094110310A patent/TWI266390B/zh not_active IP Right Cessation
- 2005-03-31 KR KR1020050027136A patent/KR100713749B1/ko not_active IP Right Cessation
- 2005-03-31 CN CNB2005100717015A patent/CN100481440C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153779A (ja) * | 2008-12-24 | 2010-07-08 | Magnachip Semiconductor Ltd | 静電気放電保護回路 |
JP2012256859A (ja) * | 2011-04-22 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4114751B2 (ja) | 2008-07-09 |
CN1677672A (zh) | 2005-10-05 |
KR20060045372A (ko) | 2006-05-17 |
TW200603351A (en) | 2006-01-16 |
TWI266390B (en) | 2006-11-11 |
CN100481440C (zh) | 2009-04-22 |
KR100713749B1 (ko) | 2007-05-04 |
US20050219778A1 (en) | 2005-10-06 |
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