JP2005286291A - 窒化物半導体発光素子及びその製造方法 - Google Patents

窒化物半導体発光素子及びその製造方法 Download PDF

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Publication number
JP2005286291A
JP2005286291A JP2004329867A JP2004329867A JP2005286291A JP 2005286291 A JP2005286291 A JP 2005286291A JP 2004329867 A JP2004329867 A JP 2004329867A JP 2004329867 A JP2004329867 A JP 2004329867A JP 2005286291 A JP2005286291 A JP 2005286291A
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Prior art keywords
substrate
nitride semiconductor
pattern
semiconductor layer
emitting device
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Japanese (ja)
Inventor
Jae Hoon Lee
ジェ フン イ
Jeong Wook Lee
ジョン ウク イ
Hyun Kyung Kim
ヒョン キョン キム
Yong Chun Kim
ヨン チョン キム
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of JP2005286291A publication Critical patent/JP2005286291A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2004329867A 2004-03-30 2004-11-12 窒化物半導体発光素子及びその製造方法 Pending JP2005286291A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040021801A KR100568297B1 (ko) 2004-03-30 2004-03-30 질화물 반도체 발광 소자 및 그 제조 방법

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JP2005286291A true JP2005286291A (ja) 2005-10-13

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US (1) US7470938B2 (ko)
JP (1) JP2005286291A (ko)
KR (1) KR100568297B1 (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
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JP2007251130A (ja) * 2006-03-17 2007-09-27 Epitech Technology Corp 発光ダイオード及びその製造方法
JP2013038438A (ja) * 2007-11-14 2013-02-21 Cree Inc ワイヤボンディングのないウェーハ段階のｌｅｄ
KR101298927B1 (ko) * 2011-12-26 2013-08-22 전자부품연구원 질화물계 발광 다이오드 및 그의 제조 방법
JP2014082496A (ja) * 2012-10-17 2014-05-08 Lg Innotek Co Ltd 発光素子
US9130134B2 (en) 2012-09-21 2015-09-08 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US9337385B2 (en) 2013-07-09 2016-05-10 Kabushiki Kaisha Toshiba Semiconductor light emitting element and method for manufacturing the same
KR101745996B1 (ko) * 2011-01-03 2017-06-12 엘지이노텍 주식회사 발광소자
WO2017154973A1 (ja) * 2016-03-08 2017-09-14 株式会社 東芝 半導体発光素子およびその製造方法

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