JP2005268755A5 - - Google Patents
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- JP2005268755A5 JP2005268755A5 JP2005009631A JP2005009631A JP2005268755A5 JP 2005268755 A5 JP2005268755 A5 JP 2005268755A5 JP 2005009631 A JP2005009631 A JP 2005009631A JP 2005009631 A JP2005009631 A JP 2005009631A JP 2005268755 A5 JP2005268755 A5 JP 2005268755A5
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- JP
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005009631A JP4586544B2 (ja) | 2004-02-17 | 2005-01-17 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
| TW094102898A TW200539350A (en) | 2004-02-17 | 2005-01-31 | Method of oxidizing work-piece, oxidation apparatus, and storage medium |
| KR1020050012519A KR100888539B1 (ko) | 2004-02-17 | 2005-02-16 | 피처리체의 산화 방법 및 산화 장치 |
| US11/059,630 US7419550B2 (en) | 2004-02-17 | 2005-02-17 | Oxidizing method and oxidizing unit of object for object to be processed |
| KR1020050018908A KR101018597B1 (ko) | 2005-01-17 | 2005-03-08 | 피처리체의 산화 장치를 제어하는 프로그램을 기억하는 기억 매체 |
| US12/213,784 US7674724B2 (en) | 2004-02-17 | 2008-06-24 | Oxidizing method and oxidizing unit for object to be processed |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004040637 | 2004-02-17 | ||
| JP2005009631A JP4586544B2 (ja) | 2004-02-17 | 2005-01-17 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005268755A JP2005268755A (ja) | 2005-09-29 |
| JP2005268755A5 true JP2005268755A5 (enExample) | 2007-10-11 |
| JP4586544B2 JP4586544B2 (ja) | 2010-11-24 |
Family
ID=35092926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005009631A Expired - Fee Related JP4586544B2 (ja) | 2004-02-17 | 2005-01-17 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7419550B2 (enExample) |
| JP (1) | JP4586544B2 (enExample) |
| KR (1) | KR100888539B1 (enExample) |
| TW (1) | TW200539350A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
| JP4609098B2 (ja) * | 2004-03-24 | 2011-01-12 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
| KR100609065B1 (ko) * | 2004-08-04 | 2006-08-10 | 삼성전자주식회사 | 산화막 형성 장치 및 방법 |
| JP4455225B2 (ja) * | 2004-08-25 | 2010-04-21 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4899744B2 (ja) * | 2006-09-22 | 2012-03-21 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
| US20090197424A1 (en) * | 2008-01-31 | 2009-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| JP5665289B2 (ja) | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
| KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
| KR101750633B1 (ko) * | 2012-07-30 | 2017-06-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
| KR102014926B1 (ko) * | 2017-10-31 | 2019-08-27 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 산화물층의 두께 예측 방법 |
| US11756794B2 (en) * | 2019-11-01 | 2023-09-12 | Texas Instruments Incorporated | IC with deep trench polysilicon oxidation |
| WO2022065163A1 (ja) * | 2020-09-25 | 2022-03-31 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、基板処理方法、及びプログラム |
| KR102719439B1 (ko) * | 2022-02-10 | 2024-10-21 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 산화물층의 두께 예측 방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS571232A (en) | 1980-06-04 | 1982-01-06 | Mitsubishi Electric Corp | Oxide film forming device |
| JP2902012B2 (ja) | 1989-10-27 | 1999-06-07 | 国際電気株式会社 | 低圧酸化装置 |
| US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
| JPH0418727A (ja) | 1990-05-11 | 1992-01-22 | Kokusai Electric Co Ltd | 縦型拡散装置 |
| SE510612C2 (sv) * | 1996-11-08 | 1999-06-07 | Ericsson Telefon Ab L M | Förfarande och anordning för att Likströmsmässigt anpassa en första krets till minst en andra krets |
| US6037273A (en) * | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
| KR100343240B1 (ko) * | 1997-09-16 | 2002-08-22 | 캐논 가부시끼가이샤 | 전자원제조방법,화상형성장치제조방법,및전자원제조장치 |
| JP3567070B2 (ja) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| JPH11345777A (ja) * | 1998-05-29 | 1999-12-14 | Tokyo Electron Ltd | 成膜装置 |
| US6383300B1 (en) | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
| JP4232307B2 (ja) * | 1999-03-23 | 2009-03-04 | 東京エレクトロン株式会社 | バッチ式熱処理装置の運用方法 |
| JP3436256B2 (ja) | 2000-05-02 | 2003-08-11 | 東京エレクトロン株式会社 | 被処理体の酸化方法及び酸化装置 |
| KR100560867B1 (ko) * | 2000-05-02 | 2006-03-13 | 동경 엘렉트론 주식회사 | 산화방법 및 산화시스템 |
| KR100421036B1 (ko) * | 2001-03-13 | 2004-03-03 | 삼성전자주식회사 | 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법 |
| KR20020087311A (ko) * | 2001-05-15 | 2002-11-22 | 삼성전자 주식회사 | 반도체 제조용 수직 확산로 설비 |
| JP4792180B2 (ja) * | 2001-07-31 | 2011-10-12 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理方法および基板処理装置 |
| JP2003318172A (ja) * | 2002-04-19 | 2003-11-07 | Tokyo Electron Ltd | 成膜方法、成膜処理時間補正式の導出方法、成膜装置、およびプログラム |
| JP3578155B2 (ja) * | 2002-07-05 | 2004-10-20 | 東京エレクトロン株式会社 | 被処理体の酸化方法 |
| JP2005072377A (ja) * | 2003-08-26 | 2005-03-17 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| KR100766196B1 (ko) * | 2003-08-26 | 2007-10-10 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
| US20050056219A1 (en) * | 2003-09-16 | 2005-03-17 | Tokyo Electron Limited | Formation of a metal-containing film by sequential gas exposure in a batch type processing system |
| US6869892B1 (en) | 2004-01-30 | 2005-03-22 | Tokyo Electron Limited | Method of oxidizing work pieces and oxidation system |
-
2005
- 2005-01-17 JP JP2005009631A patent/JP4586544B2/ja not_active Expired - Fee Related
- 2005-01-31 TW TW094102898A patent/TW200539350A/zh not_active IP Right Cessation
- 2005-02-16 KR KR1020050012519A patent/KR100888539B1/ko not_active Expired - Lifetime
- 2005-02-17 US US11/059,630 patent/US7419550B2/en not_active Expired - Lifetime
-
2008
- 2008-06-24 US US12/213,784 patent/US7674724B2/en not_active Expired - Lifetime