JP2005236128A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2005236128A JP2005236128A JP2004044920A JP2004044920A JP2005236128A JP 2005236128 A JP2005236128 A JP 2005236128A JP 2004044920 A JP2004044920 A JP 2004044920A JP 2004044920 A JP2004044920 A JP 2004044920A JP 2005236128 A JP2005236128 A JP 2005236128A
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Abstract
ー、およびプロービング時の応力により回路素子にダメージを与えることを防ぐ。
【解決手段】 半導体集積回路の入出力回路においてプロービング、あるいは、ボンディングを行う入出力パッド21を備え、入出力パッド21は入出力回路内部の素子領域上に少なくとも1個以上のパッドを有し、かつ最上層のパッド直下にビア63が格子状に配置されている。これにより、ワイヤボンドのようなボンディング荷重による配線部や拡散部へのダメージを吸収し、またボールボンディング時の超音波の影響を緩和させ、かつプロービング時のパッド下層間膜にかかる応力、衝撃エネルギーが吸収される。このため、パッド直下の配線部や拡散素子へかかる応力が緩和され、ダメージを発生させることなく、容易に接続を行うことができる。
【選択図】 図1
Description
領域上に配置した構造が各社から提案されている。
一方、プローブ検査(P検)の一般的方法である、カンチレバー方式のP検では、タングステンなどのニードル針の押圧により、パッドメタル直下には、大きな集中荷重がかかり、層間膜クラックを発生させる。
ディングの衝撃エネルギー、およびプロービング時の応力により回路素子にダメージを与えることがない半導体装置を提供することである。
14 ダミーパターン
21 POEプローブ・ボンディングパッド
22 外部パッド
31 第1の保護膜
32 第2の保護膜
41 プローブ痕
42 プローブ針
43 金属バンプ
61 POEプローブ・ボンディングパッドの上層メタル
62 POEプローブ・ボンディングパッドの下層メタル
63 ビア
64 POEプローブパッド下バッファメタル
65 外部パッド下層メタル
66 外部パッドビア
67 外部パッド上層メタル
71 第1の層間膜
72 第2の層間膜
73 第3の層間膜
81 引出し部メタル
90 円形部
91 第1の電源層メタル
92 第2の電源層メタル
101 積層ビア空隙
102 積層ビア空隙
Claims (4)
- 半導体集積回路の入出力回路においてプロービング、あるいは、ボンディングを行う入出力パッドを備えた半導体装置であって、前記入出力パッドは前記入出力回路内部の素子領域上に少なくとも1個以上のパッドを有し、かつ最上層のパッド直下にビアが格子状に配置されていることを特徴とする半導体装置。
- 前記入出力パッドは、第1の配線層に形成された第1のパッドメタルと、前記第1の配線層の一つ下層にある第2の配線層に形成された第2のパッドメタルと、前記第1のパッドメタルと第2のパッドメタルとの間の層間膜中に形成されたビアとを備え、前記ビアにより前記第1のパッドメタルと前記第2のパッドメタルが接続された積層ビア構造を有し、前記積層ビアが格子状に形成され、周期的に繰り返し配置される空隙部分を有する請求項1記載の半導体装置。
- 前記積層ビアの空隙部分が三角形である請求項2記載の半導体装置。
- 前記積層ビアの空隙部分の、前記第1のパッドメタル側の開口部が前記第2のパッドメタル側の開口部より大きい請求項2または3記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004044920A JP4267481B2 (ja) | 2004-02-20 | 2004-02-20 | 半導体装置 |
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JP2004044920A JP4267481B2 (ja) | 2004-02-20 | 2004-02-20 | 半導体装置 |
Publications (2)
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JP2005236128A true JP2005236128A (ja) | 2005-09-02 |
JP4267481B2 JP4267481B2 (ja) | 2009-05-27 |
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JP2004044920A Expired - Fee Related JP4267481B2 (ja) | 2004-02-20 | 2004-02-20 | 半導体装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009545871A (ja) * | 2006-08-01 | 2009-12-24 | フリースケール セミコンダクター インコーポレイテッド | チップ製造および設計における改良のための方法および装置 |
JP2016219749A (ja) * | 2015-05-26 | 2016-12-22 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP2019212934A (ja) * | 2019-09-20 | 2019-12-12 | 大日本印刷株式会社 | 表示装置 |
US10797032B2 (en) | 2018-04-25 | 2020-10-06 | Sharp Kabushiki Kaisha | Light-emitting element module |
-
2004
- 2004-02-20 JP JP2004044920A patent/JP4267481B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009545871A (ja) * | 2006-08-01 | 2009-12-24 | フリースケール セミコンダクター インコーポレイテッド | チップ製造および設計における改良のための方法および装置 |
JP2016219749A (ja) * | 2015-05-26 | 2016-12-22 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US10797032B2 (en) | 2018-04-25 | 2020-10-06 | Sharp Kabushiki Kaisha | Light-emitting element module |
JP2019212934A (ja) * | 2019-09-20 | 2019-12-12 | 大日本印刷株式会社 | 表示装置 |
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JP4267481B2 (ja) | 2009-05-27 |
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