JP2005228997A - 固体撮像装置およびその製造方法 - Google Patents

固体撮像装置およびその製造方法 Download PDF

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Publication number
JP2005228997A
JP2005228997A JP2004037509A JP2004037509A JP2005228997A JP 2005228997 A JP2005228997 A JP 2005228997A JP 2004037509 A JP2004037509 A JP 2004037509A JP 2004037509 A JP2004037509 A JP 2004037509A JP 2005228997 A JP2005228997 A JP 2005228997A
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Japan
Prior art keywords
film
imaging device
solid
state imaging
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004037509A
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English (en)
Japanese (ja)
Other versions
JP2005228997A5 (enExample
Inventor
Toshihiko Yano
敏彦 矢野
Hitoshi Doi
仁志 土井
Masato Niizoe
真人 新添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004037509A priority Critical patent/JP2005228997A/ja
Priority to US11/030,998 priority patent/US20050181522A1/en
Publication of JP2005228997A publication Critical patent/JP2005228997A/ja
Publication of JP2005228997A5 publication Critical patent/JP2005228997A5/ja
Priority to US12/149,136 priority patent/US7585691B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2004037509A 2004-02-13 2004-02-13 固体撮像装置およびその製造方法 Pending JP2005228997A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004037509A JP2005228997A (ja) 2004-02-13 2004-02-13 固体撮像装置およびその製造方法
US11/030,998 US20050181522A1 (en) 2004-02-13 2005-01-10 Solid-state imaging device and method for producing the same
US12/149,136 US7585691B2 (en) 2004-02-13 2008-04-28 Solid-state imaging device and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004037509A JP2005228997A (ja) 2004-02-13 2004-02-13 固体撮像装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2005228997A true JP2005228997A (ja) 2005-08-25
JP2005228997A5 JP2005228997A5 (enExample) 2006-08-10

Family

ID=34836274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004037509A Pending JP2005228997A (ja) 2004-02-13 2004-02-13 固体撮像装置およびその製造方法

Country Status (2)

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US (2) US20050181522A1 (enExample)
JP (1) JP2005228997A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073616A (ja) * 2005-09-05 2007-03-22 Sony Corp 固体撮像素子の製造方法、固体撮像素子、及び固体撮像素子を用いたカメラ
US7935988B2 (en) 2005-09-05 2011-05-03 Sony Corporation Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051752B4 (de) * 2007-10-30 2010-01-28 X-Fab Semiconductor Foundries Ag Licht blockierende Schichtenfolge und Verfahren zu deren Herstellung
KR101707159B1 (ko) 2009-11-06 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101810254B1 (ko) * 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
US9041135B2 (en) 2013-03-13 2015-05-26 The Aerospace Corporation Monolithic sun sensors assemblies thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148838A (ja) * 1988-11-30 1990-06-07 Sony Corp 金属配線パターン形成方法
JPH0456272A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp 固体撮像装置
JPH05152557A (ja) * 1991-11-28 1993-06-18 Matsushita Electron Corp Ｃｃｄ固体撮像素子およびその製造方法
JPH09330887A (ja) * 1996-05-31 1997-12-22 Applied Materials Inc 金属材料膜の形成及び加工方法並びに装置
JPH11111957A (ja) * 1997-10-06 1999-04-23 Sony Corp 固体撮像素子及びその製造方法、並びに半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100294026B1 (ko) * 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
EP0645678B1 (en) * 1993-09-24 1998-03-04 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
JP3447510B2 (ja) 1997-04-09 2003-09-16 Ｎｅｃエレクトロニクス株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP3695082B2 (ja) * 1997-07-11 2005-09-14 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法および撮像装置
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
US6846711B2 (en) * 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
JP4375517B2 (ja) * 2001-07-23 2009-12-02 日本電気株式会社 液晶表示装置
JP2004095895A (ja) * 2002-08-30 2004-03-25 Sony Corp 固体撮像素子の製造方法
JP3964324B2 (ja) * 2002-12-27 2007-08-22 三菱電機株式会社 半透過型表示装置の製造方法および半透過型表示装置
JP2004221487A (ja) * 2003-01-17 2004-08-05 Sharp Corp 半導体装置の製造方法及び半導体装置
US6812539B1 (en) * 2003-04-10 2004-11-02 Micron Technology, Inc. Imager light shield

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148838A (ja) * 1988-11-30 1990-06-07 Sony Corp 金属配線パターン形成方法
JPH0456272A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp 固体撮像装置
JPH05152557A (ja) * 1991-11-28 1993-06-18 Matsushita Electron Corp Ｃｃｄ固体撮像素子およびその製造方法
JPH09330887A (ja) * 1996-05-31 1997-12-22 Applied Materials Inc 金属材料膜の形成及び加工方法並びに装置
JPH11111957A (ja) * 1997-10-06 1999-04-23 Sony Corp 固体撮像素子及びその製造方法、並びに半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073616A (ja) * 2005-09-05 2007-03-22 Sony Corp 固体撮像素子の製造方法、固体撮像素子、及び固体撮像素子を用いたカメラ
US7935988B2 (en) 2005-09-05 2011-05-03 Sony Corporation Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
US7999291B2 (en) 2005-09-05 2011-08-16 Sony Corporation Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device
US8455291B2 (en) 2005-09-05 2013-06-04 Sony Corporation Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device

Also Published As

Publication number Publication date
US20080213939A1 (en) 2008-09-04
US20050181522A1 (en) 2005-08-18
US7585691B2 (en) 2009-09-08

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