JP2005197739A - デュアルゲートの形成方法 - Google Patents
デュアルゲートの形成方法 Download PDFInfo
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- JP2005197739A JP2005197739A JP2005000230A JP2005000230A JP2005197739A JP 2005197739 A JP2005197739 A JP 2005197739A JP 2005000230 A JP2005000230 A JP 2005000230A JP 2005000230 A JP2005000230 A JP 2005000230A JP 2005197739 A JP2005197739 A JP 2005197739A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 230000009977 dual effect Effects 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 125000006850 spacer group Chemical group 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 半導体基板上に素子分離膜を形成する段階と;前記基板に第1ゲート酸化膜を形成する段階と;前記基板を1次熱処理する段階と;前記第1ゲート酸化膜をパターニングする段階と;前記基板に第2ゲート酸化膜を形成して厚いゲート酸化物と薄いゲート酸化物を形成する段階と;前記基板にポーリを蒸着してパターニングしてゲートを形成する段階と;前記ゲートの側壁にサイドウォールスペーサを形成する段階と;前記ゲート両側下部にソース/ドレーン領域を形成する段階と;前記ポーリをとり除く段階と;前記薄いゲート酸化物をとり除く段階と;前記基板に高誘電率の物質を蒸着して第2次熱処理する段階と;ゲート用ポーリを蒸着する段階とからなる。
【選択図】 図11
Description
160 サイドウォール
180 厚いゲート酸化物
190 薄いゲート酸化物
Claims (8)
- デュアルゲートの形成方法において、
第1ゲート酸化膜を基板に成長させる段階と;
第1ゲート酸化膜に対して熱処理を遂行する段階と;
半導体基板の上部が露出するまで前記第1ゲート酸化膜の所定の部分をとり除く段階と;
薄い酸化膜に使われる第2ゲート酸化膜を露出した基板に形成して、第1ゲート酸化膜を厚い酸化膜に使う段階と;
半導体基板の全面にポリシリコンを蒸着してフォトリソグラフィ工程と蝕刻工程を通じてダミーゲートを形成する段階と;
サイドウォール・スペーサを前記ダミーゲートの側壁に形成する段階と;
前記ダミーゲートの周辺にソース/ドレーン領域を形成する段階と;
前記ダミーゲートと第2ゲート酸化膜をとり除く段階と;
第2ゲート酸化膜をとり除いた所に絶縁膜を形成する段階と;
前記ダミーゲートが除去された所にポリシリコンを満たす段階と;
ゲート電極が露出するまで構造物を平坦化させる段階と;
を含むことを特徴とするデュアルゲートの形成方法。 - 前記第1ゲート酸化膜に対する熱処理は、窒素雰囲気で遂行されることを特徴とする請求項1に記載のデュアルゲートの形成方法。
- 前記第2ゲート酸化膜が除去される時に第1ゲート酸化膜の所定の厚さが除去されることを特徴とする請求項1に記載のデュアルゲートの形成方法。
- 前記絶縁膜は、シリコン酸化物または高誘電率を持つ物質で構成されることを特徴とする請求項1に記載のデュアルゲートの形成方法。
- 前記高誘電率を持つ物質は、TaO5、TiO2、またはITOの中で選択された物質に形成されたことを特徴とする請求項4に記載のデュアルゲートの形成方法。
- 前記絶縁膜の厚さは、第1ゲート酸化膜と同じであることを特徴とする請求項1に記載のデュアルゲートの形成方法。
- 前記絶縁膜に対する熱処理は、600℃で遂行することを特徴とする請求項1に記載のデュアルゲートの形成方法。
- 前記構造物は、CMPによって平坦化することを特徴とする請求項1に記載のデュアルゲートの形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030101187A KR100609236B1 (ko) | 2003-12-31 | 2003-12-31 | 듀얼 게이트 형성 방법 |
KR10-2003-0101184A KR100540058B1 (ko) | 2003-12-31 | 2003-12-31 | 듀얼 게이트 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197739A true JP2005197739A (ja) | 2005-07-21 |
JP4440119B2 JP4440119B2 (ja) | 2010-03-24 |
Family
ID=36088955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005000230A Expired - Fee Related JP4440119B2 (ja) | 2003-12-31 | 2005-01-04 | デュアルゲートの形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7026203B2 (ja) |
JP (1) | JP4440119B2 (ja) |
DE (1) | DE102004063578B4 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100488546B1 (ko) * | 2003-08-29 | 2005-05-11 | 삼성전자주식회사 | 트랜지스터의 제조방법 |
JP4744885B2 (ja) * | 2005-01-18 | 2011-08-10 | 株式会社東芝 | 半導体装置の製造方法 |
CN101123252B (zh) * | 2006-08-10 | 2011-03-16 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US7762314B2 (en) * | 2007-04-24 | 2010-07-27 | International Business Machines Corporation | Cooling apparatus, cooled electronic module and methods of fabrication employing a manifold structure with interleaved coolant inlet and outlet passageways |
US7939392B2 (en) * | 2008-10-06 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for gate height control in a gate last process |
KR20120042301A (ko) * | 2010-10-25 | 2012-05-03 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US9082789B2 (en) * | 2011-05-13 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication methods of integrated semiconductor structure |
US8853035B2 (en) | 2011-10-05 | 2014-10-07 | International Business Machines Corporation | Tucked active region without dummy poly for performance boost and variation reduction |
KR101850409B1 (ko) | 2012-03-15 | 2018-06-01 | 삼성전자주식회사 | 듀얼 게이트 절연막을 갖는 반도체 장치의 제조 방법 |
CN103531453B (zh) * | 2012-07-02 | 2016-12-21 | 中芯国际集成电路制造(上海)有限公司 | 半导体集成器件及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043157A (en) * | 1997-12-18 | 2000-03-28 | Advanced Micro Devices | Semiconductor device having dual gate electrode material and process of fabrication thereof |
US6087208A (en) * | 1998-03-31 | 2000-07-11 | Advanced Micro Devices, Inc. | Method for increasing gate capacitance by using both high and low dielectric gate material |
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
KR100350056B1 (ko) * | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법 |
AU2001286895A1 (en) | 2000-08-29 | 2002-03-13 | Boise State University | Damascene double gated transistors and related manufacturing methods |
KR100422342B1 (ko) | 2000-12-29 | 2004-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 제조방법 |
JP4845299B2 (ja) * | 2001-03-09 | 2011-12-28 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2003152102A (ja) * | 2001-11-15 | 2003-05-23 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US7535066B2 (en) * | 2002-01-23 | 2009-05-19 | Texas Instruments Incorporated | Gate structure and method |
JP3976577B2 (ja) * | 2002-02-01 | 2007-09-19 | エルピーダメモリ株式会社 | ゲート電極の製造方法 |
JP2003347420A (ja) * | 2002-05-23 | 2003-12-05 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US6706581B1 (en) * | 2002-10-29 | 2004-03-16 | Taiwan Semiconductor Manufacturing Company | Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices |
-
2004
- 2004-12-22 US US11/017,762 patent/US7026203B2/en not_active Expired - Fee Related
- 2004-12-27 DE DE102004063578A patent/DE102004063578B4/de not_active Expired - Fee Related
-
2005
- 2005-01-04 JP JP2005000230A patent/JP4440119B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102004063578A1 (de) | 2006-04-13 |
JP4440119B2 (ja) | 2010-03-24 |
US20050153493A1 (en) | 2005-07-14 |
US7026203B2 (en) | 2006-04-11 |
DE102004063578B4 (de) | 2006-06-29 |
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