JP2005196935A - 高速にデータアクセスをするための半導体メモリ装置 - Google Patents
高速にデータアクセスをするための半導体メモリ装置 Download PDFInfo
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- JP2005196935A JP2005196935A JP2004195058A JP2004195058A JP2005196935A JP 2005196935 A JP2005196935 A JP 2005196935A JP 2004195058 A JP2004195058 A JP 2004195058A JP 2004195058 A JP2004195058 A JP 2004195058A JP 2005196935 A JP2005196935 A JP 2005196935A
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- Prior art keywords
- bit line
- sense amplifier
- data
- global
- memory device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
Abstract
【解決手段】複数の単位セルをそれぞれ備えるN個のセルブロックと、前記N個のセルブロックの両側にそれぞれ備えられたN+1個の共有型ローカルビットラインセンスアンプ部と、前記ローカルビットラインセンスアンプ部によって感知、増幅されたデータ信号を、ラッチするための第1及び第2グローバルビットラインセンスアンプ部と、前記選択されたセルブロックの一方に備えられたローカルビットラインセンスアンプ部によって感知、増幅された第1データは、前記第1グローバルビットラインセンスアンプ部に伝送し、前記選択されたセルブロックの他方に備えられたローカルビットラインセンスアンプ部によって感知、増幅された第2データは、前記第2グローバルセンスアンプ部に伝送するためのデータ信号伝送部とを備える。
【選択図】図3
Description
LBG3、LBG2、LBG4 ローカルビットラインスイッチ
GBIS0、GBIS1、GBIS2 グローバルビットラインスイッチ
Claims (2)
- 共有ビットラインセンスアンプ部の構造を有する半導体メモリ装置において、
複数の単位セルをそれぞれ備えるN個のセルブロックと、
前記N個のセルブロックの一方と他方とにそれぞれ備えられ、選択されたセルブロックに備えられる単位セルのデータ信号を感知、増幅するためのN+1個のローカルビットラインセンスアンプ部と、
前記ローカルビットラインセンスアンプ部によって感知、増幅されたデータ信号を、ラッチするための第1及び第2グローバルビットラインセンスアンプ部と、
前記選択されたセルブロックの一方に備えられたローカルビットラインセンスアンプ部によって感知、増幅された第1データは、前記第1グローバルビットラインセンスアンプ部に伝送し、前記選択されたセルブロックの他方に備えられたローカルビットラインセンスアンプ部によって感知、増幅された第2データは、前記第2グローバルセンスアンプ部に伝送するためのデータ信号伝送部と
を備えることを特徴とするメモリ装置。 - 複数のメモリーセルブロックと、
一方に互いに隣接したメモリーセルブロックのビットラインを共有し、前記ビットラインに印加された信号を増幅する複数のローカルセンスアンプと、
前記複数のローカルセンスアンプの他方に共通接続されたグローバルビットラインと、
前記グローバルビットラインに接続された第1及び第2グローバルセンスアンプと、
前記ビットラインと前記ローカルセンスアンプとの間をスイッチングする複数の第1スイッチング手段と、
前記グローバルビットラインと前記ローカルセンスアンプとの間をスイッチングする複数の第2スイッチング手段と、
同一のメモリーセルブロックから、同時に提供される第1及び第2データを、前記第1グローバルセンスアンプと前記第2グローバルセンスアンプとにそれぞれ伝送するために、前記グローバルビットラインを分離する第3スイッチング手段と
を備えることを特徴とする半導体メモリ装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030098456A KR100721547B1 (ko) | 2003-12-29 | 2003-12-29 | 고속으로 데이터 엑세스를 하기 위한 반도체 메모리 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005196935A true JP2005196935A (ja) | 2005-07-21 |
Family
ID=34698627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004195058A Pending JP2005196935A (ja) | 2003-12-29 | 2004-06-30 | 高速にデータアクセスをするための半導体メモリ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7088637B2 (ja) |
JP (1) | JP2005196935A (ja) |
KR (1) | KR100721547B1 (ja) |
CN (1) | CN1637940B (ja) |
TW (1) | TWI296116B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100472726B1 (ko) * | 2002-10-29 | 2005-03-10 | 주식회사 하이닉스반도체 | 고속 데이터억세스를 위한 반도체 메모리장치 및 그구동방법 |
US7310257B2 (en) * | 2005-11-10 | 2007-12-18 | Micron Technology, Inc. | Local digit line architecture and method for memory devices having multi-bit or low capacitance memory cells |
KR100714475B1 (ko) | 2006-01-11 | 2007-05-04 | 삼성전자주식회사 | 상변화 메모리 장치 |
US7342839B2 (en) | 2006-06-23 | 2008-03-11 | International Business Machines Corporation | Memory cell access circuit |
US7692990B2 (en) | 2006-06-23 | 2010-04-06 | International Business Machines Corporation | Memory cell access circuit |
KR100886848B1 (ko) * | 2007-03-14 | 2009-03-04 | 경희대학교 산학협력단 | 다수의 데이터를 동시에 입출력할 수 있는 메모리 장치 |
KR101194896B1 (ko) * | 2010-08-30 | 2012-10-25 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 |
US9418719B2 (en) * | 2013-11-28 | 2016-08-16 | Gsi Technology Israel Ltd. | In-memory computational device |
US10153042B2 (en) | 2013-11-28 | 2018-12-11 | Gsi Technology Inc. | In-memory computational device with bit line processors |
WO2015170220A1 (en) * | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
US10074416B2 (en) * | 2016-03-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for data movement |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103755A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | 半導体記憶装置 |
JPH06333400A (ja) * | 1993-05-25 | 1994-12-02 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
JP2000076847A (ja) * | 1998-08-28 | 2000-03-14 | Samsung Electronics Co Ltd | 半導体メモリ装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL125604A (en) * | 1997-07-30 | 2004-03-28 | Saifun Semiconductors Ltd | Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge |
US6275407B1 (en) * | 1999-06-29 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor memory device having sense and data lines for use to read and write operations |
JP2001084776A (ja) * | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体記憶装置 |
JP4632107B2 (ja) * | 2000-06-29 | 2011-02-16 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US6426905B1 (en) * | 2001-02-07 | 2002-07-30 | International Business Machines Corporation | High speed DRAM local bit line sense amplifier |
US6436768B1 (en) * | 2001-06-27 | 2002-08-20 | Advanced Micro Devices, Inc. | Source drain implant during ONO formation for improved isolation of SONOS devices |
KR100472726B1 (ko) * | 2002-10-29 | 2005-03-10 | 주식회사 하이닉스반도체 | 고속 데이터억세스를 위한 반도체 메모리장치 및 그구동방법 |
US6912163B2 (en) * | 2003-01-14 | 2005-06-28 | Fasl, Llc | Memory device having high work function gate and method of erasing same |
KR100587639B1 (ko) * | 2003-05-30 | 2006-06-08 | 주식회사 하이닉스반도체 | 계층화된 출력배선의 감지증폭기 드라이버를 구비한반도체 메모리 소자 |
-
2003
- 2003-12-29 KR KR1020030098456A patent/KR100721547B1/ko active IP Right Grant
-
2004
- 2004-06-25 US US10/876,380 patent/US7088637B2/en active Active
- 2004-06-25 TW TW093118425A patent/TWI296116B/zh not_active IP Right Cessation
- 2004-06-30 JP JP2004195058A patent/JP2005196935A/ja active Pending
- 2004-11-01 CN CN2004100871530A patent/CN1637940B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103755A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | 半導体記憶装置 |
JPH06333400A (ja) * | 1993-05-25 | 1994-12-02 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
JP2000076847A (ja) * | 1998-08-28 | 2000-03-14 | Samsung Electronics Co Ltd | 半導体メモリ装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI296116B (en) | 2008-04-21 |
TW200522069A (en) | 2005-07-01 |
CN1637940B (zh) | 2011-02-16 |
KR20050067472A (ko) | 2005-07-04 |
US7088637B2 (en) | 2006-08-08 |
CN1637940A (zh) | 2005-07-13 |
US20050141324A1 (en) | 2005-06-30 |
KR100721547B1 (ko) | 2007-05-23 |
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