JP2005188990A - Package for pressure detector - Google Patents

Package for pressure detector Download PDF

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JP2005188990A
JP2005188990A JP2003427994A JP2003427994A JP2005188990A JP 2005188990 A JP2005188990 A JP 2005188990A JP 2003427994 A JP2003427994 A JP 2003427994A JP 2003427994 A JP2003427994 A JP 2003427994A JP 2005188990 A JP2005188990 A JP 2005188990A
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electrode
insulating
insulating base
insulating plate
main surface
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Toshiyuki Chitose
敏幸 千歳
Yosuke Moriyama
陽介 森山
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for pressure detector which is enhanced in detecting sensitivity for an externally applied pressure with a small size and can perform precise detection over a long period with high reliability. <P>SOLUTION: This package for pressure detector comprises an insulating base body 1 having a mounting part 1b for mounting a semiconductor element 3 on one main surface thereof, an insulating plate 2 bonded to the insulating base body 1 in a flexible state so as to form a closed space with the other main surface of the insulating base body 1, an electrostatic capacity forming first electrode 7 fitted to the insulating base body 1, and a second electrode 9 fitted to the insulating plate 2. The insulating plate 2 has a recessed part on the closed space-side main surface, and the inner side wall surface of the recessed part is inclined so as to extended outwardly from the bottom side of the recessed part to the insulating base body 1 side. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、圧力を検出するための圧力検出装置に使用される圧力検出装置用パッケージに関する。   The present invention relates to a package for a pressure detection device used in a pressure detection device for detecting pressure.

従来、圧力を検出するための圧力検出装置として静電容量型の圧力検出装置が知られている。この静電容量型の圧力検出装置は、図3に断面図で示すように、セラミック材料や樹脂材料から成る配線基板21上に、静電容量型の感圧素子22と、圧力検出装置用パッケージ28に収容された演算用の半導体素子29とを備えている。   Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. As shown in a cross-sectional view in FIG. 3, this capacitance type pressure detection device has a capacitance type pressure sensitive element 22 and a pressure detection device package on a wiring board 21 made of a ceramic material or a resin material. 28 and a semiconductor element 29 for calculation contained in 28.

そして、感圧素子22は、例えばセラミック材料等の電気絶縁材料から成るとともにその上面中央部に静電容量形成用の電極23が被着された凹部を有する絶縁基体24と、この絶縁基体24の上面に絶縁基体24の凹部が密閉空間となるように可撓な状態で接合されるとともに密閉空間側の主面に静電容量形成用の電極25が被着された絶縁板26と、各静電容量形成用の電極23および電極25をそれぞれ外部と電気的に接続するための外部リード端子27とから構成されている。これにより、外部から加わる圧力に応じて絶縁板26が撓むことで電極23と電極25間との間に形成された静電容量が変化し、この変化を演算用の半導体素子29により演算処理することで外部から加わる圧力を検出することができる。   The pressure sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material, and has an insulating base 24 having a concave portion with a capacitance forming electrode 23 attached to the center of the upper surface thereof. An insulating plate 26 is bonded to the upper surface in a flexible state so that the concave portion of the insulating base 24 becomes a sealed space, and an electrostatic capacitance forming electrode 25 is attached to the main surface on the sealed space side. Each of the capacitance forming electrode 23 and the electrode 25 is composed of an external lead terminal 27 for electrically connecting to the outside. As a result, the capacitance formed between the electrode 23 and the electrode 25 is changed by bending the insulating plate 26 according to the pressure applied from the outside, and this change is calculated by the semiconductor element 29 for calculation. By doing so, the pressure applied from the outside can be detected.

しかしながら、この従来の圧力検出装置によると、感圧素子22と半導体素子29とを配線基板21上に個別に実装していることから、圧力検出装置が大型化するとともに圧力検出用の電極23および電極25と半導体素子29とを接続する配線導体が長いものとなり、不要な静電容量が生じるため感度が低くなるという問題点を有していた。   However, according to this conventional pressure detection device, since the pressure sensitive element 22 and the semiconductor element 29 are individually mounted on the wiring board 21, the pressure detection device is enlarged and the pressure detection electrode 23 and The wiring conductor that connects the electrode 25 and the semiconductor element 29 becomes long, and there is a problem that sensitivity is lowered because unnecessary capacitance is generated.

そこで、図2に断面図で示すような、一方の主面に半導体素子13が搭載される搭載部11bを有する絶縁基体11と、この絶縁基体11の表面および内部に配設され、半導体素子13の各電極が電気的に接続される複数の配線導体15と、絶縁基体11の他方の主面の中央部に被着され、配線導体15の一つである配線導体15aに電気的に接続された静電容量形成用の第一電極17と、絶縁基体11の他方の主面に、この主面の中央部との間に密閉空間を形成するように可撓な状態で接合された絶縁板12と、絶縁板12の内側の主面に第一電極17と対向するように被着されるとともに配線導体15の他の一つである配線導体15bに電気的に接続された静電容量形成用の第二電極19とを具備する圧力検出装置用パッケージが提案されている(例えば、下記の特許文献1参照)。   Therefore, as shown in a cross-sectional view in FIG. 2, an insulating base 11 having a mounting portion 11 b on which the semiconductor element 13 is mounted on one main surface, and the surface and inside of the insulating base 11 are provided. A plurality of wiring conductors 15 that are electrically connected to each other and a central portion of the other main surface of the insulating base 11 are attached to the wiring conductor 15a that is one of the wiring conductors 15 and electrically connected to the wiring conductor 15a. Insulating plate joined in a flexible state so as to form a sealed space between the first electrode 17 for forming capacitance and the other main surface of the insulating substrate 11 and the central portion of the main surface. 12 is formed on the inner surface of the insulating plate 12 so as to face the first electrode 17 and is electrically connected to a wiring conductor 15b, which is another wiring conductor 15. And a second electrode 19 for the pressure sensing device package is proposed. And are (for example, see Patent Document 1 below).

この圧力検出装置用パッケージによれば、半導体素子13を収容する圧力検出装置用パッケージに感圧素子が一体に形成されるため、圧力検出装置を小型化することができるとともに圧力検出用の電極と半導体素子13とを接続する配線導体15を短いものとすることができ、複数の配線導体15間に発生する不要な静電容量を小さなものとすることができる。   According to this pressure detection device package, since the pressure sensitive element is integrally formed in the pressure detection device package that accommodates the semiconductor element 13, the pressure detection device can be reduced in size and the pressure detection electrode and The wiring conductor 15 connecting the semiconductor element 13 can be shortened, and unnecessary capacitance generated between the plurality of wiring conductors 15 can be reduced.

従来、圧力検出装置用パッケージの配線導体15や静電容量形成用の第一電極17,第二電極19は、タングステンやモリブデン,銅,銀等の金属粉末メタライズから成り、タングステン等の金属粉末に適当な有機バインダ,溶剤,可塑剤および分散剤を添加混合して得たメタライズペーストを従来周知のスクリーン印刷法等によりセラミックグリーンシートに印刷塗布し、これらを絶縁基体11や絶縁板12となるセラミックグリーンシートが上下に積層された生セラミック成形体とともに焼成することによって製作される。   Conventionally, the wiring conductor 15 of the pressure detection device package, the first electrode 17 for forming the capacitance, and the second electrode 19 are made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc. A metallized paste obtained by adding and mixing an appropriate organic binder, solvent, plasticizer and dispersant is printed on a ceramic green sheet by a conventionally known screen printing method or the like, and these are ceramics to be the insulating substrate 11 and the insulating plate 12. The green sheet is manufactured by firing together with a green ceramic molded body laminated on top and bottom.

また、第一電極17および第二電極19を静電容量形成用とするために、第一電極17と第二電極19との間に一定の空間領域を形成する必要があるため、絶縁基体11または絶縁板12の外周部に枠状の突起部12aを形成することで、絶縁基体11と絶縁板12との間に静電容量形成用の密閉空間を形成していた。   Further, in order to use the first electrode 17 and the second electrode 19 for forming a capacitance, it is necessary to form a certain space region between the first electrode 17 and the second electrode 19. Alternatively, by forming the frame-shaped protrusion 12 a on the outer peripheral portion of the insulating plate 12, a sealed space for forming a capacitance is formed between the insulating base 11 and the insulating plate 12.

なお、絶縁基体11と絶縁板12とは、絶縁基体11上に第一電極17の周囲に設けられた第一接合用メタライズ層18と、絶縁板12の外周部に設けられた第二接合用メタライズ層20とがろう材等の導電性接合材によって接合されることにより取着されている。   The insulating substrate 11 and the insulating plate 12 are a first bonding metallization layer 18 provided around the first electrode 17 on the insulating substrate 11 and a second bonding material provided on the outer periphery of the insulating plate 12. The metallized layer 20 is attached by bonding with a conductive bonding material such as a brazing material.

また、このような突起部12aを有する絶縁板12は、密閉空間を形成するための貫通孔が打ち抜き加工法等で形成された突起部12a用のセラミックグリーンシートと、第二電極19が形成された底板部12b用のセラミックグリーンシートとを積層し絶縁板12用のグリーンシートと成し、高温で焼成することで形成される。
特開2001−356064号公報
In addition, the insulating plate 12 having such a protruding portion 12a is formed with the ceramic green sheet for the protruding portion 12a in which a through hole for forming a sealed space is formed by a punching method or the like, and the second electrode 19. It is formed by laminating ceramic green sheets for the bottom plate portion 12b to form a green sheet for the insulating plate 12, and firing at a high temperature.
JP 2001-356064 A

しかしながら、従来の圧力検出装置用パッケージによると、外部から加わる圧力を受けて絶縁板12の底板部12bが撓んだ時に、突起部12aの内側面と底板部12bとの間の角付近に撓みにより発生する応力が集中し、絶縁板12にクラック等が発生しやすくなる。このため、絶縁板12に外部から大きな圧力が加わった状態で、振動や衝撃等が長期間にわたり加わると突起部12aの内側面と底板部12bとの間の角付近にクラックが発生し、外部から加わる圧力を長期間にわたり正確に検出することが困難となるという問題点を有していた。   However, according to the conventional package for a pressure detection device, when the bottom plate portion 12b of the insulating plate 12 is bent due to pressure applied from the outside, it is bent near the corner between the inner surface of the projection 12a and the bottom plate portion 12b. As a result, the stress generated by the above is concentrated and cracks or the like are likely to occur in the insulating plate 12. For this reason, when a large pressure is applied to the insulating plate 12 from the outside, if a vibration or impact is applied for a long period of time, a crack is generated near the corner between the inner surface of the protruding portion 12a and the bottom plate portion 12b. Therefore, there is a problem that it is difficult to accurately detect the pressure applied from a long time.

また、絶縁基体11と絶縁板12とを接合する際、ろう材等の導電性接合材が密閉空間内に流出し、突起部12aの内側面を伝って第二電極19に濡れ広がりやすく、これにより第一電極17と第二電極19との間の静電容量を所定のものとすることが困難になるという問題点があった。このようなろう材の濡れ広がりを防止するために、第一接合用メタライズ層18および第二接合用メタライズ層20を絶縁基体11および絶縁板12の外周部にだけ形成して密閉空間にろう材が達しないようにした場合、第一接合用メタライズ層18と第二接合用メタライズ層20との接合面積が小さくなって絶縁基体11と絶縁板12との接合強度が低下するという問題点があった。   Further, when the insulating base 11 and the insulating plate 12 are bonded, the conductive bonding material such as the brazing material flows out into the sealed space and easily spreads on the second electrode 19 along the inner surface of the protruding portion 12a. Therefore, there is a problem that it is difficult to set the capacitance between the first electrode 17 and the second electrode 19 to a predetermined value. In order to prevent such wetting and spreading of the brazing material, the first bonding metallization layer 18 and the second bonding metallization layer 20 are formed only on the outer peripheral portions of the insulating base 11 and the insulating plate 12 to form a brazing material in a sealed space. If this is not achieved, the bonding area between the first bonding metallization layer 18 and the second bonding metallization layer 20 becomes small, and the bonding strength between the insulating substrate 11 and the insulating plate 12 decreases. It was.

従って、本発明は係る従来の問題点を鑑み案出されたものであり、その目的は、小型でかつ外部から加わる圧力の検出感度が高く、長期間にわたって正確に検出することができる信頼性の高い圧力検出装置用のパッケージを提供することにある。   Therefore, the present invention has been devised in view of the conventional problems, and the purpose thereof is small and has high detection sensitivity of pressure applied from the outside, and can be accurately detected over a long period of time. It is to provide a package for a high pressure sensing device.

本発明の圧力検出装置用パッケージは、一方の主面に半導体素子が搭載される搭載部を有する絶縁基体と、該絶縁基体の表面および内部に配設され、前記半導体素子の各電極が電気的に接続される複数の配線導体と、前記絶縁基体の他方の主面との間に密閉空間を形成するように可撓な状態で前記絶縁基体に接合された絶縁板と、前記密閉空間内の前記絶縁基体の前記他方の主面に被着され、前記配線導体の一つに電気的に接続された静電容量形成用の第一電極と、前絶縁板の内側の主面に前記第一電極と対向するように被着され、前記配線導体の他の一つに電気的に接続された静電容量形成用の第二電極とを具備する圧力検出装置用パッケージであって、前記絶縁板は、前記内側の主面に凹部が形成されており、該凹部の側壁の内側面は、前記凹部の底面側から前記絶縁基体側に向かうに伴って外側に広がるように傾斜していることを特徴とする。   The package for a pressure detection device according to the present invention includes an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and a surface and an inside of the insulating base, and each electrode of the semiconductor element is electrically An insulating plate joined to the insulating substrate in a flexible state so as to form a sealed space between the plurality of wiring conductors connected to the other main surface of the insulating substrate, and the inside of the sealed space A first electrode for forming a capacitance that is attached to the other main surface of the insulating base and is electrically connected to one of the wiring conductors, and a first electrode on the inner main surface of the front insulating plate. A package for a pressure detection device, comprising: a second electrode for forming a capacitance that is attached so as to face an electrode and is electrically connected to the other one of the wiring conductors; Is formed with a recess in the inner main surface, and the inner surface of the side wall of the recess is Characterized in that from the bottom side of the serial recess are inclined so as to spread outwardly along with toward the insulating substrate side.

本発明の圧力検出装置用パッケージにおいて、前記凹部は、内側面と底面との間の角が前記第一電極の外周端の直上に位置していることを特徴とする。   In the package for a pressure detection device according to the present invention, the recess has an angle between the inner surface and the bottom surface located directly above the outer peripheral end of the first electrode.

本発明の圧力検出装置用パッケージによれば、絶縁板は、密閉空間側の主面に凹部が形成されており、凹部の側壁の内側面は、凹部の底面側よりも絶縁基体側が広くなっていることから、絶縁板の凹部の底面を構成する部位である底板部が撓んだ際、内側面と底面との間の角に加わる応力を有効に分散し、絶縁板に外部から大きな圧力が加わった状態で振動や衝撃等が長期間にわたり加わっても、凹部の内側面と底面との間の角にクラックが発生するのを有効に防止することができる。これにより、外部から加わる圧力を長期間にわたり正確に検出することができる圧力検出装置用パッケージを提供することができる。   According to the pressure sensing device package of the present invention, the insulating plate has a recess formed in the main surface on the sealed space side, and the inner side surface of the side wall of the recess is wider on the insulating base side than the bottom surface side of the recess. Therefore, when the bottom plate portion, which is a part constituting the bottom surface of the concave portion of the insulating plate, is bent, the stress applied to the corner between the inner surface and the bottom surface is effectively dispersed, and a large pressure is applied to the insulating plate from the outside. Even if vibration, impact, or the like is applied for a long time in the applied state, it is possible to effectively prevent cracks from occurring at the corners between the inner surface and the bottom surface of the recess. Thereby, the package for pressure detection apparatuses which can detect the pressure applied from the outside accurately over a long period of time can be provided.

また、凹部の側壁の内側面が傾斜しているので、絶縁板と絶縁基体との接合部と第二電極との間の距離を大きくすることができ、絶縁板と絶縁基体とを接合するためのろう材が第二電極に濡れ広がるのを有効に防止できる。   In addition, since the inner side surface of the side wall of the recess is inclined, the distance between the joint between the insulating plate and the insulating base and the second electrode can be increased, and the insulating plate and the insulating base are joined. It is possible to effectively prevent the brazing material from spreading on the second electrode.

本発明の圧力検出装置用パッケージによれば、好ましくは、絶縁板に形成されている凹部は内側面と底面との間の角が前記第一電極の外周端の直上に位置することから、第一電極と第二電極との外周が平面視で一致して第一電極と第二電極の面積が等しくなり、平面視で第一電極の外周よりも外側に位置する第二電極の外周部が第一電極の端部と不均一な電気力線により静電容量を形成することによって生じる静電容量の不均一性を有効に抑制することができる。これによりに、外部から加わる圧力をより正確に検出できる圧力検出装置用パッケージを提供することができる。   According to the pressure detection device package of the present invention, preferably, the recess formed in the insulating plate has a corner between the inner surface and the bottom surface located immediately above the outer peripheral end of the first electrode. The outer peripheries of the first electrode and the second electrode coincide with each other in a plan view so that the areas of the first electrode and the second electrode are equal. It is possible to effectively suppress the non-uniformity of the electrostatic capacitance that is generated by forming the electrostatic capacitance by the end portion of the first electrode and the non-uniform electric lines of force. Thereby, it is possible to provide a package for a pressure detection device that can more accurately detect the pressure applied from the outside.

次に、本発明の圧力検出装置用パッケージを添付の図面に基づいて詳細に説明する。   Next, the pressure detection device package of the present invention will be described in detail with reference to the accompanying drawings.

図1は、本発明の圧力検出装置用パッケージの実施の形態の一例を示す断面図であり、1は絶縁基体、2は絶縁板、3は半導体素子、7は第一電極、9は第二電極である。   FIG. 1 is a cross-sectional view showing an example of an embodiment of a pressure detecting device package according to the present invention, wherein 1 is an insulating substrate, 2 is an insulating plate, 3 is a semiconductor element, 7 is a first electrode, and 9 is a second. Electrode.

絶縁基体1および絶縁板2は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体,ムライト質焼結体,炭化珪素質焼結体,窒化珪素質焼結体,ガラスセラミックス等の電気絶縁材料から成る。このような絶縁基体1および絶縁板2が例えば酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウムや酸化珪素,酸化マグネシウム,酸化カルシウム等のセラミック原料粉末に適当な有機バインダ,溶剤,可塑剤および分散剤を添加混合して泥漿状となすとともに、これを従来周知のドクターブレード法等によりシート状に成形することで複数枚のセラミックグリーンシートを得、しかる後、これらのセラミックグリーンシートに適当な打ち抜き加工や積層加工,切断加工等を施すとともに上下に積層して生セラミック成形体と成し、これを約1600℃の温度で焼成することにより製作される。   The insulating substrate 1 and the insulating plate 2 are made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic. Consists of. If the insulating base 1 and the insulating plate 2 are made of, for example, an aluminum oxide sintered body, a suitable organic binder, solvent, plastics for ceramic raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide are used. Add and mix the agent and dispersant to make a mud, and by molding this into a sheet by a conventionally known doctor blade method, etc., a plurality of ceramic green sheets are obtained. Appropriate punching, laminating, cutting and the like are performed, and a green ceramic molded body is formed by stacking up and down, and is fired at a temperature of about 1600 ° C.

絶縁基体1は一方の主面(図1では下面)に凹部1aが形成されており、この凹部1aは底面中央部に半導体素子3を搭載する搭載部1bを有している。そして絶縁基体1は半導体素子3を収容する容器として機能する。この半導体素子3は、搭載部1bに搭載されるとともに例えばエポキシ樹脂等の樹脂製封止材4により凹部1a内で覆われることで封止される。または、絶縁基体1の一方の主面に金属やセラミックス等から成る蓋体を凹部1aを塞ぐように接合することにより封止されてもよい。   The insulating base 1 has a concave portion 1a formed on one main surface (the lower surface in FIG. 1), and the concave portion 1a has a mounting portion 1b for mounting the semiconductor element 3 at the center of the bottom surface. The insulating substrate 1 functions as a container for housing the semiconductor element 3. The semiconductor element 3 is mounted on the mounting portion 1b and sealed by being covered in the recess 1a with a resin sealing material 4 such as an epoxy resin. Alternatively, the insulating base 1 may be sealed by joining a lid made of metal, ceramics, or the like to one main surface so as to close the recess 1a.

また、搭載部1bには複数の配線導体5が導出されており、配線導体5と半導体素子3の各電極とを半田バンプ等の導電性接合材6を介して接合することにより半導体素子3の各電極と各配線導体5とが電気的に接続されるとともに半導体素子3が搭載部1bに取着される。または、半導体素子3は配線導体5とボンディングワイヤ等の他の電気的接続手段により接続されてもよい。   A plurality of wiring conductors 5 are led out to the mounting portion 1b, and the wiring conductor 5 and each electrode of the semiconductor element 3 are joined via a conductive bonding material 6 such as a solder bump, so that the semiconductor element 3 Each electrode and each wiring conductor 5 are electrically connected, and the semiconductor element 3 is attached to the mounting portion 1b. Alternatively, the semiconductor element 3 may be connected to the wiring conductor 5 by other electrical connection means such as a bonding wire.

配線導体5は、半導体素子3の各電極を外部電気回路,第一電極7および第二電極9に電気的に接続するための導電路として機能し、その一部は絶縁基体1の一方の主面外周部に導出され、別の一部は第一電極7や第二電極9に電気的に接続されている。   The wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to the external electric circuit, the first electrode 7 and the second electrode 9, and a part of the wiring conductor 5 is one main part of the insulating substrate 1. It is led out to the outer peripheral part of the surface, and another part is electrically connected to the first electrode 7 and the second electrode 9.

このような配線導体5は、タングステンやモリブデン,銅,銀等の金属粉末メタライズから成り、タングステン等の金属粉末に適当な有機バインダ,溶剤,可塑剤および分散剤等を添加混合して得たメタライズペーストを従来周知のスクリーン印刷法により絶縁基体1用のセラミックグリーンシートに所定のパターンに印刷塗布し、これを絶縁基体1用の生セラミック成形体とともに焼成することによって絶縁基体1の内部および表面に所定のパターンに形成される。なお、配線導体5の露出表面には、配線導体5が酸化腐食するのを防止するとともに配線導体5と半田等の導電性接合材6との接合を良好なものとするために、厚みが1〜10μm程度のニッケルめっき層と厚みが0.1〜3μm程度の金めっき層とが順次被着されていることが好ましい。   Such a wiring conductor 5 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, dispersant, and the like to metal powder such as tungsten. The paste is printed and applied in a predetermined pattern on a ceramic green sheet for the insulating substrate 1 by a well-known screen printing method, and this is fired together with a green ceramic molded body for the insulating substrate 1 to form the inside and the surface of the insulating substrate 1. A predetermined pattern is formed. The exposed surface of the wiring conductor 5 has a thickness of 1 in order to prevent the wiring conductor 5 from being oxidatively corroded and to improve the bonding between the wiring conductor 5 and the conductive bonding material 6 such as solder. It is preferable that a nickel plating layer having a thickness of about 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.

また、絶縁基体1の他方の主面(図1では上面)の中央部には静電容量形成用の第一電極7が被着されており、この第一電極7は配線導体5の一部である配線導体5aと電気的に接続されている。この配線導体5aに半導体素子3の電極を半田バンプ等の導電性接合材6を介して接続することにより第一電極7と半導体素子3の電極とが電気的に接続される。また、第一電極7は例えば円形状に形成されている。   A first electrode 7 for forming a capacitance is attached to the center of the other main surface (upper surface in FIG. 1) of the insulating substrate 1, and this first electrode 7 is a part of the wiring conductor 5. Is electrically connected to the wiring conductor 5a. The first electrode 7 and the electrode of the semiconductor element 3 are electrically connected by connecting the electrode of the semiconductor element 3 to the wiring conductor 5a via the conductive bonding material 6 such as a solder bump. The first electrode 7 is formed in a circular shape, for example.

また、絶縁基体1の他方の主面の外周部には、全周にわたり枠状の第一接合用メタライズ層8が被着されており、このメタライズ層8と後述する凹部を有する絶縁板2の第二接合用メタライズ層10とを銀−銅ろう材等のろう材を介して接合することにより、絶縁基体1と絶縁板2との間に密閉空間が形成される。   Further, a frame-shaped first bonding metallization layer 8 is deposited on the outer peripheral portion of the other main surface of the insulating base 1 over the entire periphery, and the insulating plate 2 having the metallized layer 8 and a concave portion to be described later. A sealed space is formed between the insulating base 1 and the insulating plate 2 by bonding the second bonding metallization layer 10 via a brazing material such as a silver-copper brazing material.

この第一接合用メタライズ層8はメタライズ配線導体5の一つである配線導体5bが電気的に接続されており、この配線導体5bに半導体素子3の電極を半田バンプ等の導電性接合材6を介して電気的に接続することで、半導体素子3の電極と第二電極9とが電気的に接続される。   The first bonding metallized layer 8 is electrically connected to a wiring conductor 5b, which is one of the metallized wiring conductors 5. The conductive bonding material 6 such as a solder bump is connected to the electrode of the semiconductor element 3 on the wiring conductor 5b. The electrode of the semiconductor element 3 and the second electrode 9 are electrically connected by being electrically connected via.

絶縁板2は四角形状や八角形状等の多角形状、あるいは円形状等の平板状であり、一方の主面の外周部に高さが0.01〜5mmの枠状の突起部2aが形成されることにより、凹部が形成される。絶縁板2の凹部の底面を構成する部位である底板部2bが外部から加わる圧力に応じて絶縁基体1側に撓み、いわゆる圧力検出用のダイアフラムとして機能する。   The insulating plate 2 has a rectangular shape, a polygonal shape such as an octagonal shape, or a flat plate shape such as a circular shape, and a frame-shaped protruding portion 2a having a height of 0.01 to 5 mm is formed on the outer peripheral portion of one main surface. Thus, a recess is formed. The bottom plate portion 2b, which is a portion constituting the bottom surface of the concave portion of the insulating plate 2, bends toward the insulating base 1 according to the pressure applied from the outside, and functions as a so-called pressure detecting diaphragm.

なお、絶縁板2は、底板部2bの厚みが0.01mm未満ではその機械的強度が低いものとなり、外部から加わる圧力が大きい場合に破壊されやすくなる。また、底板部2bの厚みが5mmを超えると外部から加わる圧力が小さい場合に底板部2は撓み難くなり、圧力検出用のダイアフラムとしての精度が低下しやすくなる。したがって、絶縁板2の凹部の底板部2bの厚みは0.01〜5mmの範囲が好ましい。   The insulating plate 2 has a low mechanical strength when the thickness of the bottom plate portion 2b is less than 0.01 mm, and is easily broken when the pressure applied from the outside is large. On the other hand, if the thickness of the bottom plate portion 2b exceeds 5 mm, the bottom plate portion 2 is difficult to bend when the pressure applied from the outside is small, and the accuracy as a pressure detecting diaphragm is likely to be lowered. Therefore, the thickness of the bottom plate portion 2b of the concave portion of the insulating plate 2 is preferably in the range of 0.01 to 5 mm.

また、絶縁板2の凹部の底面には容量形成用の第二電極9が被着されている。この第二電極9は、例えば円形状に形成され、前述の第一電極7と対向して感圧素子用の静電容量を形成する。   A second electrode 9 for forming a capacitance is attached to the bottom surface of the recess of the insulating plate 2. The second electrode 9 is formed in a circular shape, for example, and forms a capacitance for the pressure sensitive element so as to face the first electrode 7 described above.

上記のような第一電極7および第二電極9は、厚みが10〜50μm程度のタングステンやモリブデン,銅,銀等の金属粉末メタライズから成り、配線導体5と同様の方法で形成される。また、第一電極7および第二電極9の表面には酸化腐食するのを防止するために、厚みが1〜10μm程度のニッケルめっき層が被着されているのがよい。   The first electrode 7 and the second electrode 9 as described above are made of metal powder metallization such as tungsten, molybdenum, copper, and silver having a thickness of about 10 to 50 μm, and are formed by the same method as the wiring conductor 5. Further, a nickel plating layer having a thickness of about 1 to 10 μm is preferably deposited on the surfaces of the first electrode 7 and the second electrode 9 in order to prevent oxidative corrosion.

また、絶縁板2の突起部2aの絶縁基体1側の主面には第二電極9に電気的に接続された多角形状または円形状の枠状の第二接合用メタライズ層10が被着されている。そして、第二接合用メタライズ層10は絶縁板2を絶縁基体1に接合するための接合用下地金属層として機能して第二接合用メタライズ層10と第一接合用メタライズ層8とが銀−銅ろう等のろう材を介して接合されるとともに第一接合用メタライズ層8と第二接合用メタライズ層10とが電気的に接続される。   Further, a polygonal or circular frame-shaped second bonding metallization layer 10 electrically connected to the second electrode 9 is attached to the main surface of the protrusion 2a of the insulating plate 2 on the insulating base 1 side. ing. The second bonding metallization layer 10 functions as a bonding base metal layer for bonding the insulating plate 2 to the insulating substrate 1, and the second bonding metallization layer 10 and the first bonding metallization layer 8 are silver- The first metallization layer 8 for bonding and the second metallization layer 10 for bonding are electrically connected to each other through a brazing material such as copper brazing.

このとき、第一電極7と第二電極9は、絶縁基体1と絶縁板2との間に形成された密閉空間を挟んで対向し、その電極間に、第一電極7や第二電極9の面積および第一電極7と第二電極9との間隔に応じて所定の静電容量を形成する。そして、外部から絶縁板2の他方の主面に加わる圧力に応じて絶縁板2の底板部2bが絶縁基体1側に撓んで第一電極7と第二電極9との間隔が変化することにより静電容量が変化することで、外部から加わる圧力の変化を静電容量の変化として感知する感圧素子として機能する。さらに、この静電容量の変化を凹部1a内に収容された半導体素子3にメタライズ配線導体5a,5bを介して伝達し、半導体素子3で演算処理することにより外部から加わる圧力の大きさを知ることができる。   At this time, the first electrode 7 and the second electrode 9 are opposed to each other with a sealed space formed between the insulating base 1 and the insulating plate 2 interposed therebetween, and the first electrode 7 and the second electrode 9 are interposed between the electrodes. A predetermined capacitance is formed according to the area of the first electrode 7 and the distance between the first electrode 7 and the second electrode 9. Then, the bottom plate portion 2b of the insulating plate 2 bends toward the insulating base 1 according to the pressure applied to the other main surface of the insulating plate 2 from the outside, and the distance between the first electrode 7 and the second electrode 9 changes. By changing the capacitance, it functions as a pressure-sensitive element that senses a change in pressure applied from the outside as a change in capacitance. Further, the change in capacitance is transmitted to the semiconductor element 3 accommodated in the recess 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the pressure applied from the outside is known by performing arithmetic processing in the semiconductor element 3. be able to.

上記のような第一接合用メタライズ層8および第二接合用メタライズ層10は、厚みが10〜50μm程度のタングステンやモリブデン,銅,銀等の金属粉末メタライズから成り、上記の配線導体5と同様の方法で形成される。なお、第一接合用メタライズ層8および第二接合用メタライズ層10の表面には酸化腐食するのを防止するとともに第一接合用メタライズ層8および第二接合用メタライズ層10とろう材との接合を強固なものとするために、厚みが1〜10μm程度のニッケルめっき層が被着されているのがよい。   The first bonding metallization layer 8 and the second bonding metallization layer 10 are made of metal powder metallization of tungsten, molybdenum, copper, silver or the like having a thickness of about 10 to 50 μm, and are similar to the wiring conductor 5 described above. It is formed by the method. It should be noted that the surfaces of the first bonding metallization layer 8 and the second bonding metallization layer 10 are prevented from being oxidized and corroded, and the first bonding metallization layer 8 and the second bonding metallization layer 10 are bonded to the brazing material. In order to strengthen the thickness, a nickel plating layer having a thickness of about 1 to 10 μm is preferably applied.

また、絶縁基体1と絶縁板2との接合は、第一接合用メタライズ層8および第二接合用メタライズ層10の表面に予め1〜10μm程度の厚みのニッケルめっき層をそれぞれ被着させておくとともに、第一接合用メタライズ層8と第二接合用メタライズ層10との間に厚みが10〜200μm程度の銀−銅ろう等から成るろう材箔を挟み、これらを還元雰囲気中で約850℃の温度に加熱してろう材箔を溶融させ、第一接合用メタライズ層8と第二接合用メタライズ層10とをろう付けすることにより行なわれる。   In addition, in the bonding of the insulating substrate 1 and the insulating plate 2, a nickel plating layer having a thickness of about 1 to 10 μm is previously deposited on the surfaces of the first bonding metallization layer 8 and the second bonding metallization layer 10, respectively. In addition, a brazing material foil made of silver-copper brazing having a thickness of about 10 to 200 μm is sandwiched between the metallizing layer 8 for the first bonding and the metallizing layer 10 for the second bonding, and these are about 850 ° C. in a reducing atmosphere. This is performed by melting the brazing material foil by heating to a temperature of 1 mm and brazing the metallized layer 8 for first bonding and the metallized layer 10 for second bonding.

本発明の絶縁板2は、密閉空間側の主面に凹部が形成されており、凹部の側壁の内側面は、凹部の底面側から絶縁基体1側に向かうに伴って外側に広がるように傾斜している。これにより、このような圧力検出装置用パッケージの絶縁板2は、例えば、打ち抜き金型等を用いて突起部2a用のセラミックグリーンシートに密閉空間となる貫通孔を一方の主面から他方の主面側に向かうに伴って外側に広がるように形成する。そして、突起部2a用のセラミックグリーンシートおよび搭載部2b用のセラミックグリーンシートに第二電極や第二接合用メタライズ層10,配線導体5となる導体ペーストをスクリーン印刷法等で印刷した後、これらのセラミックグリーンシートを密閉空間となる貫通孔の内側面が底板部2b側から絶縁基体1と接合される側に向かうに伴って外側に広がるように積層し、所定の切断加工を施した後、高温で焼成することにより製作される。   The insulating plate 2 of the present invention has a recess formed in the main surface on the sealed space side, and the inner side surface of the side wall of the recess is inclined so as to spread outward from the bottom surface side of the recess toward the insulating base 1 side. doing. As a result, the insulating plate 2 of such a pressure detection device package is formed by, for example, using a punching die or the like to form a through-hole serving as a sealed space in the ceramic green sheet for the protruding portion 2a from one main surface to the other main surface. It forms so that it may spread outside as it goes to the surface side. And after printing the conductor paste used as the 2nd electrode, the metallizing layer 10 for 2nd joining, and the wiring conductor 5 to the ceramic green sheet for the protrusion part 2a, and the ceramic green sheet for the mounting part 2b by these screen printing methods etc., these After laminating the ceramic green sheets so that the inner side surface of the through hole serving as a sealed space spreads outward from the bottom plate portion 2b side toward the side to be joined to the insulating base 1, and after performing a predetermined cutting process, Manufactured by firing at high temperature.

また、単層のセラミックグリーンシートに金型等を用いてプレス加工することで、密閉空間となる凹部を形成することもできる。この場合、突起部2aの底板部2b側の端部を、曲面とすることが可能となり、底面と内側面との間の角に加わる応力をより有効に分散することができ、絶縁板2にクラック等が発生するのをより有効に防止することができる。   Moreover, the recessed part used as sealed space can also be formed by pressing a single layer ceramic green sheet using a metal mold | die. In this case, the end on the bottom plate 2b side of the protrusion 2a can be a curved surface, and stress applied to the corner between the bottom surface and the inner surface can be more effectively dispersed. The occurrence of cracks and the like can be more effectively prevented.

また、絶縁板2の底板部2bはプレス加工により押圧されながら形成されるため、底板部2bの反りや捻れをきわめて小さくすることができるとともに、単層のセラミックグリーンシートから絶縁板2を形成することができるので、突起部2aの高さを低く形成することができ、第一電極7と第二電極9との間隔を小さいものとし感度の高い圧力検出装置用パッケージとすることができる。   Further, since the bottom plate portion 2b of the insulating plate 2 is formed while being pressed by pressing, the warping and twisting of the bottom plate portion 2b can be extremely reduced, and the insulating plate 2 is formed from a single-layer ceramic green sheet. Therefore, the height of the projecting portion 2a can be reduced, and the distance between the first electrode 7 and the second electrode 9 can be reduced to provide a highly sensitive pressure detecting device package.

絶縁板2は、例えば、両主面に凹部が形成されていてもよい。これにより、外部から加わる圧力により絶縁板2の底板部2bが撓んだ際、絶縁板2の密閉空間側の主面の凹部の底面と内側面との間の角に加わる応力を、絶縁板2の他方の主面の凹部の底面と内側面との間の角でも分散することが可能となり、応力をより効果的に分散させることができる。さらに、絶縁板2の密閉空間側の主面の凹部は他方の主面の凹部よりも広く形成されていてもよい。これにより、より密閉空間側の凹部の底面の周縁部が撓みやすくなることから、密閉空間側の凹部の底面と内側面との間の角に加わる応力をきわめて有効に分散することができ、絶縁板2に外部からの大きな圧力が加わった状態で振動や衝撃等が長期間にわたって加わっても、絶縁板2にクラック等が発生するのをより有効に防止することができる。従って、外部から加わる圧力を長期間にわたり正確に検出することができる圧力検出装置用パッケージを提供することができる。   The insulating plate 2 may have recesses formed on both main surfaces, for example. Thereby, when the bottom plate portion 2b of the insulating plate 2 is bent by the pressure applied from the outside, the stress applied to the corner between the bottom surface of the concave portion of the main surface on the sealed space side of the insulating plate 2 and the inner surface is changed to the insulating plate. It becomes possible to disperse even at the angle between the bottom surface of the recess of the other main surface of 2 and the inner surface, and the stress can be dispersed more effectively. Furthermore, the concave portion of the main surface of the insulating plate 2 on the sealed space side may be formed wider than the concave portion of the other main surface. As a result, the peripheral edge of the bottom surface of the recessed portion on the sealed space side is more easily bent, so that the stress applied to the corner between the bottom surface and the inner surface of the recessed portion on the sealed space side can be extremely effectively dispersed, and Even if vibration, impact, or the like is applied to the plate 2 with a large external pressure, cracks or the like can be more effectively prevented from occurring in the insulating plate 2. Therefore, it is possible to provide a package for a pressure detection device that can accurately detect the pressure applied from the outside over a long period of time.

また、絶縁板2の凹部の内側面が平坦な傾斜面である場合、凹部の底面と内側面との成す角度は90〜135°が好ましい。90°より小さい角度であると、外部から加わる圧力により凹部の底板部2bが撓んだ際に、凹部の底面と内側面との間の角に加わる応力を有効に分散し難くなり、絶縁板2にクラック等が発生しやすくなる。また、135°より大きい角度であると、凹部の底面に被着されている静電容量形成用の第二電極9の面積や可撓する底板部2bの領域が小さくなり、圧力の検出感度が低下しやすくなるとともに、絶縁基体1との接合部となる第二接合用メタライズ層10の面積が小さくなり、第一接合用メタライズ層8と第二接合用メタライズ層10との接合強度が低下しやすくなる。また、第二電極9の面積や第二接合用メタライズ層10の面積を大きく確保すると、絶縁板2の大型化し、パッケージが大型化する。   Moreover, when the inner surface of the recessed part of the insulating plate 2 is a flat inclined surface, the angle formed by the bottom surface of the recessed part and the inner surface is preferably 90 to 135 °. When the angle is smaller than 90 °, when the bottom plate portion 2b of the recess is bent by the pressure applied from the outside, it is difficult to effectively disperse the stress applied to the corner between the bottom surface and the inner surface of the recess. 2 easily cracks. Further, when the angle is larger than 135 °, the area of the second electrode 9 for forming capacitance and the region of the flexible bottom plate portion 2b attached to the bottom surface of the recess is reduced, and the pressure detection sensitivity is reduced. While becoming easy to fall, the area of the 2nd joining metallization layer 10 used as a junction part with the insulating base | substrate 1 becomes small, and the joining strength of the metallizing layer 8 for 1st joining and the metallizing layer 10 for 2nd joining falls. It becomes easy. Moreover, if the area of the 2nd electrode 9 and the area of the metallizing layer 10 for 2nd joining are ensured large, the insulation board 2 will enlarge and a package will enlarge.

また、絶縁板2の凹部の内側面は、凹部の底面側から絶縁基体1に向かうに伴って外側に広がるように傾斜したなだらかな曲面状であってもよい。この場合、さらに、絶縁板2の凹部の底面と内側面との境界(稜)がないようになめらかな角で接続されるのがより好ましい。これにより、外部から加わる圧力により凹部の底板部2bが撓んだ際に、発生する応力をきわめて効果的に分散することができ、クラック等の発生を有効に抑制することができる。   In addition, the inner side surface of the recess of the insulating plate 2 may be a gently curved surface that is inclined so as to spread outward from the bottom surface side of the recess toward the insulating substrate 1. In this case, it is more preferable that the connection is made with a smooth corner so that there is no boundary (ridge) between the bottom surface and the inner side surface of the recess of the insulating plate 2. Thereby, when the bottom plate portion 2b of the concave portion is bent by the pressure applied from the outside, it is possible to disperse the generated stress very effectively and to effectively suppress the occurrence of cracks and the like.

さらに、絶縁板2の突起部2aの絶縁基体1側の主面と内側面の間に、突起部2aの内側に凹んだ段差を設けてもよい。これにより第一接合用メタライズ層8と第二接合用メタライズ層10との間からはみ出たろう材をこの段差で溜めることができ、ろう材が第一電極7に接触するのを有効に防止することができる。さらに、段差の表面に第二接合用メタライズ層10を被着していてもよい。これにより第一接合用メタライズ層8と第二接合用メタライズ層10とをろう材等で接合させる際、この段差内にろう材を濡れ広がらせて溜めることにより良好なメニスカスが形成されることから、密閉空間内にろう材が流出するのをより有効に防止できるとともに、第一接合用メタライズ層8と第二接合用メタライズ層10との接合強度をより高めることができる。   Furthermore, a step that is recessed inside the protrusion 2a may be provided between the main surface and the inner surface of the protrusion 2a of the insulating plate 2 on the insulating base 1 side. As a result, the brazing material protruding from between the first bonding metallization layer 8 and the second bonding metallization layer 10 can be accumulated at this step, and the brazing material can be effectively prevented from contacting the first electrode 7. Can do. Further, the second bonding metallization layer 10 may be applied to the surface of the step. As a result, when the first bonding metallized layer 8 and the second bonding metallized layer 10 are bonded with a brazing material or the like, a good meniscus is formed by wetting and spreading the brazing material in this step. The brazing material can be more effectively prevented from flowing into the sealed space, and the bonding strength between the first bonding metallization layer 8 and the second bonding metallization layer 10 can be further increased.

このように、本発明の圧力検出装置用パッケージによれば、一方の主面に半導体素子3が搭載される絶縁基体1の他方の主面に静電容量形成用の第一電極7が被着されるとともに、絶縁基体1との間に密閉空間を形成するように可撓な状態で絶縁基体1に接合された絶縁板2の内側の主面にこの第一電極7と対向するように被着された静電容量形成用の第二電極9とを具備することから、半導体素子3を収容する容器と感圧素子とが一体となり、圧力検出装置を小型化することができる。   Thus, according to the package for a pressure detection device of the present invention, the first electrode 7 for forming a capacitance is attached to the other main surface of the insulating substrate 1 on which the semiconductor element 3 is mounted on one main surface. In addition, the inner surface of the insulating plate 2 joined to the insulating substrate 1 in a flexible state so as to form a sealed space with the insulating substrate 1 is covered with the first electrode 7 so as to face the first electrode 7. Since the attached second electrode 9 for forming capacitance is provided, the container for housing the semiconductor element 3 and the pressure sensitive element are integrated, and the pressure detection device can be miniaturized.

また、静電容量形成用の第一電極7および第二電極9を、絶縁基体1の表面および内部に配設された配線導体5a,5bを介して半導体素子3の各電極に接続していることから、第一電極7および第二電極9を短い距離で半導体素子3に接続することができ、その結果、これらの配線導体5a,5b間に発生する不要な静電容量を小さなものとして感度の高い圧力検出装置用パッケージを提供することができる。   In addition, the first electrode 7 and the second electrode 9 for forming capacitance are connected to the respective electrodes of the semiconductor element 3 via the wiring conductors 5a and 5b disposed on the surface and inside of the insulating base 1. Therefore, the first electrode 7 and the second electrode 9 can be connected to the semiconductor element 3 at a short distance, and as a result, the unnecessary capacitance generated between the wiring conductors 5a and 5b is reduced to a small sensitivity. It is possible to provide a high pressure detection device package.

なお、本発明は、上述の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲内であれば種々の変更は可能である。例えば、図1においては、絶縁基体1と絶縁板2とを導電性接合材により接合しているが、絶縁基体1用のグリーンシートと絶縁板2用のグリーンシートとを積層した後、焼結一体化させたものであっても構わない。また、絶縁板2の凹部の側壁の内側面は、凹部の底面側においては凹部の底面側から絶縁基体1側に向かうに伴って外側に広がるような平坦な傾斜面や曲面であり、内側面の途中から絶縁基体1の主面にかけて垂直な面となっていてもよい。   The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in FIG. 1, the insulating substrate 1 and the insulating plate 2 are bonded together by a conductive bonding material. After the green sheet for the insulating substrate 1 and the green sheet for the insulating plate 2 are laminated, sintering is performed. It may be integrated. In addition, the inner side surface of the side wall of the recess of the insulating plate 2 is a flat inclined surface or curved surface that spreads outward from the bottom surface side of the recess toward the insulating base 1 side on the bottom surface side of the recess. It may be a vertical surface from the middle to the main surface of the insulating substrate 1.

タイヤ等の圧力状態を検出するための圧力検出装置等に利用可能である。   The present invention can be used for a pressure detection device for detecting a pressure state of a tire or the like.

本発明の圧力検出装置用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the package for pressure detection apparatuses of this invention. 従来の圧力検出装置用パッケージの断面図である。It is sectional drawing of the conventional package for pressure detection apparatuses. 従来の圧力検出装置の断面図である。It is sectional drawing of the conventional pressure detection apparatus.

符号の説明Explanation of symbols

1・・・・・・・・・・・絶縁基体
1b・・・・・・・・・・搭載部
2・・・・・・・・・・・絶縁板
2b・・・・・・・・・・凹部の底板部
3・・・・・・・・・・・半導体素子
5、5a、5b・・・・・配線導体
7・・・・・・・・・・・第一電極
9・・・・・・・・・・・第二電極
1 ·········· Insulation base 1b ····· Mounting portion 2 ················ Insulation plate 2b ··· ·················································· Semiconductor elements 5, 5a, 5b ... Wiring conductor ..... Second electrode

Claims (2)

一方の主面に半導体素子が搭載される搭載部を有する絶縁基体と、該絶縁基体の表面および内部に配設され、前記半導体素子の各電極が電気的に接続される複数の配線導体と、前記絶縁基体の他方の主面との間に密閉空間を形成するように可撓な状態で前記絶縁基体に接合された絶縁板と、前記密閉空間内の前記絶縁基体の前記他方の主面に被着され、前記配線導体の一つに電気的に接続された静電容量形成用の第一電極と、前絶縁板の内側の主面に前記第一電極と対向するように被着され、前記配線導体の他の一つに電気的に接続された静電容量形成用の第二電極とを具備する圧力検出装置用パッケージであって、前記絶縁板は、前記内側の主面に凹部が形成されており、該凹部の側壁の内側面は、前記凹部の底面側から前記絶縁基体側に向かうに伴って外側に広がるように傾斜していることを特徴とする圧力検出装置用パッケージ。 An insulating base having a mounting portion on which a semiconductor element is mounted on one main surface; and a plurality of wiring conductors disposed on and inside the insulating base and electrically connected to the electrodes of the semiconductor element; An insulating plate joined to the insulating base in a flexible state so as to form a sealed space with the other main surface of the insulating base; and the other main surface of the insulating base in the sealed space. A first electrode for forming a capacitance that is attached and electrically connected to one of the wiring conductors, and is attached to the inner main surface of the front insulating plate so as to face the first electrode; And a second electrode for forming a capacitance electrically connected to the other one of the wiring conductors, wherein the insulating plate has a recess on the inner main surface. The inner surface of the side wall of the recess is formed from the bottom surface side of the recess to the insulating base side. Pressure sensing device package, characterized in that is inclined so as to spread outwardly along with the cow. 前記凹部は、内側面と底面との間の角が前記第一電極の外周端の直上に位置していることを特徴とする請求項1に記載の圧力検出装置用パッケージ。 2. The package for a pressure detection device according to claim 1, wherein an angle between an inner surface and a bottom surface of the recess is located immediately above an outer peripheral end of the first electrode.
JP2003427994A 2003-12-24 2003-12-24 Package for pressure detector Pending JP2005188990A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106323539A (en) * 2016-09-23 2017-01-11 上海立格仪表有限公司 Sensor base

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106323539A (en) * 2016-09-23 2017-01-11 上海立格仪表有限公司 Sensor base
CN106323539B (en) * 2016-09-23 2022-07-22 上海立格仪表有限公司 Sensor base

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