JP4223709B2 - Method for manufacturing package for pressure detection device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a pressure detection device package used in a pressure detection device for detecting pressure.
[0002]
[Prior art]
Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. For example, as shown in a cross-sectional view in FIG. 2, the capacitance type pressure detection device is accommodated in a capacitance type pressure sensitive element 22 and a package 28 on a wiring substrate 21 made of a ceramic material or a resin material. And a semiconductor element 29 for operation. The pressure sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material, and has an insulating base 24 having a concave portion in which one electrode 23 for forming a capacitance is attached at the center of the upper face, and an upper face of the insulating base 24 The insulating plate 26 is joined in a flexible state so as to form a sealed space with the insulating base 24, and the other electrode 25 for forming a capacitance is attached to the lower surface, and each static plate Consists of external lead terminals 27 for electrically connecting the electrodes 23 and 25 for capacitance formation to the outside, and each capacitance is formed by bending the insulating plate 26 in response to external pressure. The capacitance formed between the electrodes 23 and 25 for use changes. Then, the external pressure can be detected by performing arithmetic processing on the change in the electrostatic capacitance by the semiconductor element 29 for arithmetic operation.
[0003]
[Problems to be solved by the invention]
However, according to this conventional pressure detection device, since the pressure sensitive element 22 and the semiconductor element 29 are individually mounted on the wiring board 21, the pressure detection device becomes large and the pressure detection electrode 23 is increased. The wiring between 25 and the semiconductor element 29 becomes long, and an unnecessary electrostatic capacity is formed between the long wiring, so that the sensitivity is low.
[0004]
Therefore, the applicant of the present application previously disclosed in Japanese Patent Application No. 2000-178618, and is disposed on the surface and inside of an insulating base made of a ceramic material having a mounting portion on which a semiconductor element is mounted on one main surface. A plurality of wiring conductors to which each electrode of the semiconductor element is electrically connected, and the central part of the other main surface of the insulating base, and are electrically connected to one of the wiring conductors Insulation made of ceramic material joined in a flexible state so as to form a sealed space between the first electrode for capacitance formation and the other main surface of the insulating base and the central portion of the main surface And a second electrode for forming a capacitance that is attached to the inner main surface of the insulating plate so as to face the first electrode and is electrically connected to the other one of the wiring conductors. A pressure sensing device package was proposed. According to this pressure detection device package, the first electrode for forming a capacitance is provided on the other main surface of the insulating base having the mounting portion on which the semiconductor element is mounted on one main surface. Since the insulating plate having the second electrode for forming the opposing capacitance on the inner surface is joined in a flexible state so as to form a sealed space between the other main surface of the insulating base, A pressure-sensitive element is integrally formed in a package that houses a semiconductor element. As a result, the pressure detection device can be reduced in size, and the wiring for connecting the pressure detection electrode and the semiconductor element can be shortened. Unnecessary capacitance generated between the wirings can be reduced. In the pressure detection device package proposed in Japanese Patent Application No. 2000-178618, for example, a frame made of ceramics or metal is provided on the outer peripheral portion of the other main surface of the insulating base so as to surround the first electrode. The insulating plate was bonded to the insulating substrate by brazing the outer peripheral portion of the second electrode onto the frame body via a silver-copper brazing having a thickness of about 50 μm.
[0005]
However, according to the package for a pressure detection device proposed in Japanese Patent Application No. 2000-178618, the brazing material made of silver-copper brazing that joins the insulating base and the insulating plate is likely to be plastically deformed by a large stress. When a large external pressure is applied over a long period of time, the stress generated by the bending of the insulating plate will act on the inner peripheral edge of the brazing material having a thickness of about 50 μm to join the insulating substrate and the insulating plate. A large plastic deformation occurs in the material, and as a result, even if the application of pressure is released, the insulating plate does not return completely to the original position, so that the external pressure cannot be detected accurately. It had the problem that.
[0006]
The present invention has been completed in view of the above-described problems, and an object of the present invention is to provide a pressure detection device capable of accurately detecting an external pressure over a long period of time.
[0007]
[Means for Solving the Problems]
The method for manufacturing a package for a pressure detection device according to the present invention includes a plurality of metallized wiring conductors inside and on the surface, a mounting portion on which a semiconductor element is mounted on one main surface, and the metalized wiring conductor on the other main surface. A first metallization electrode for capacitance formation electrically connected to one and a frame-shaped first junction surrounding the first metallization electrode and electrically connected to the other metallization wiring conductor Preparing a ceramic substrate having a metallized layer for use, and having a frame-shaped protrusion on the outer peripheral portion of one main surface, and facing the first metallized electrode on one main surface surrounded by the protrusion A second metallized electrode for forming a capacitance and the second metallized electrode electrically connected to the protrusion and brazed to the first metallized layer for bonding through a brazing material And preparing a ceramic plate to be bonded to the ceramic substrate in a flexible state so as to form a sealed space with the other main surface of the ceramic substrate. A step of bringing the first bonding metallization layer of the ceramic substrate into contact with the second bonding metallization layer of the ceramic plate, and the outer periphery of the first bonding metallization layer or the second bonding metallization layer Disposing the brazing material so as to contact the part, melting the brazing material while pressing the first bonding metallization layer and the second bonding metallization layer, and the first bonding metallization layer A step of infiltrating the molten brazing material between the first bonding metallization layer and the second bonding metallization layer, and brazing the first bonding metallization layer and the second bonding metallization layer. Characterized in that it.
[0008]
According to the method for manufacturing a package for a pressure detection device of the present invention, it is possible to reduce the thickness of the brazing material that joins the ceramic base and the ceramic plate, and external pressure is largely applied to the ceramic plate over a long period of time. However, the amount of plastic deformation of the brazing material can be made extremely small.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a pressure detection device package according to the present invention, in which 1 is a ceramic substrate, 2 is a ceramic plate, and 3 is a semiconductor element.
[0010]
The ceramic substrate 1 is a laminated body made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or a glass-ceramic. For example, the ceramic substrate 1 is made of an aluminum oxide sintered body. If there is, add a suitable organic binder, solvent, plasticizer, and dispersant to ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. A plurality of ceramic green sheets are obtained by forming into a sheet by adopting the method, and then, the ceramic green sheets are subjected to appropriate punching, laminating, and cutting processes to produce a raw material for the ceramic substrate 1. A ceramic molded body is obtained, and this green ceramic molded body is fired at a temperature of about 1600 ° C. It is manufactured by doing.
[0011]
The ceramic substrate 1 has a recess 1a for accommodating the semiconductor element 3 at the center of the lower surface thereof, thereby functioning as a container for accommodating the semiconductor element 3. The central portion of the bottom surface of the recess 1a is a mounting portion 1b on which the semiconductor element 3 is mounted. The semiconductor element 3 is mounted on the mounting portion 1b and the resin sealing such as an epoxy resin is provided in the recess 1a. The semiconductor element 3 is sealed by filling the material 4. In this example, the semiconductor element 3 is sealed by filling the recess 1a with the resin sealing material 4. However, the semiconductor element 3 has a lid made of metal or ceramics on the lower surface of the ceramic base 1 to form the recess 1a. It may be sealed by bonding so as to block.
[0012]
Also, a plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out to the mounting portion 1b. The metallized wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to a conductive material such as a solder bump 6 or the like. The electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are electrically connected to each other through the conductive bonding member made of the semiconductor element 3 and the semiconductor element 3 is fixed to the mounting portion 1b. In this example, the electrode of the semiconductor element 3 and the metallized wiring conductor 5 are connected via the solder bumps 6. However, the electrode of the semiconductor element 3 and the metalized wiring conductor 5 are connected to other types of electric wires such as bonding wires. It may be connected by a general connection means.
[0013]
The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first metallized electrode 7 and a second metallized electrode 9 to be described later, and a part thereof is a ceramic substrate. The other part is electrically connected to the first metallized electrode 7 and the second metallized electrode 9. Each electrode of the semiconductor element 3 is electrically connected to these metallized wiring conductors 5 through a conductive bonding material and the semiconductor element 3 is sealed with a resin sealing material 4. The portion led out to the lower surface of the outer periphery of the ceramic substrate 1 is joined to the wiring conductor of the external electric circuit board via a conductive bonding material such as solder, so that the semiconductor element 3 accommodated therein is electrically connected to the external electric circuit. The Rukoto.
[0014]
Such a metallized wiring conductor 5 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, dispersant, and the like to metal powder such as tungsten. The metallized paste is printed and applied in a predetermined pattern on a ceramic green sheet for the ceramic substrate 1 by employing a conventionally known screen printing method, and is fired together with a green ceramic molded body for the ceramic substrate 1 to thereby form the ceramic substrate 1. A predetermined pattern is formed inside and on the surface. In order to prevent the metallized wiring conductor 5 from being oxidized and corroded on the surface of the metallized wiring conductor 5 and to improve the bonding between the metalized wiring conductor 5 and a conductive bonding material such as solder, it is usual. If present, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.
[0015]
A first metallized electrode 7 for forming a capacitance is attached to the center of the upper surface of the ceramic substrate 1. The first metallized electrode 7 is for forming a capacitance for a pressure sensitive element together with a second metallized electrode 9 to be described later, and is formed in a substantially circular pattern, for example. The first metallized electrode 7 is connected to one of the metallized wiring conductors 5a, whereby the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via a conductive bonding material such as a solder bump 6. When connected, the electrode of the semiconductor element 3 and the first metallized electrode 7 are electrically connected.
[0016]
Such a first metallized electrode 7 is made of metal powder metallization of tungsten, molybdenum, copper, silver or the like having a thickness of about 10 to 50 μm, and an organic binder, solvent, plasticizer, or dispersant suitable for the metal powder such as tungsten. The metallized paste obtained by adding and mixing is printed and applied to a ceramic green sheet for the ceramic substrate 1 using a conventionally known screen printing method, and this is fired together with a green ceramic molded body for the ceramic substrate 1 to form a ceramic. A predetermined pattern is formed at the center of the upper surface of the substrate 1. In addition, in order to prevent the first metallized electrode 7 from being oxidized and corroded, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied to the surface of the first metallized electrode 7.
[0017]
Further, a first bonding metallization layer 8 having a substantially circular or octagonal frame shape surrounding the first metallization electrode 7 is attached to the outer peripheral portion of the upper surface of the ceramic substrate 1. The first bonding metallization layer 8 functions as a base metal for bonding the ceramic plate 2 to the ceramic substrate 1, and the first bonding metallization layer 8 has a second metallization electrode 9 and the second metallization electrode on the lower surface. A ceramic plate 2 having a second bonding metallization layer 10 electrically connected to 9 is connected to the second bonding metallization layer 10 and the first bonding metallization layer 8 via a brazing material 11 such as silver-copper brazing. They are joined by brazing.
[0018]
One metallized wiring conductor 5b is connected to the first metallizing layer 8 for bonding, whereby the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5b via a conductive bonding material such as a solder bump 6. When electrically connected, the electrode of the semiconductor element 3 and the second metallized electrode 9 are electrically connected.
[0019]
The metallization layer 8 for the first bonding is made of metal powder metallization such as tungsten, molybdenum, copper or silver, and an appropriate organic binder, solvent, plasticizer or dispersant is added to and mixed with metal powder such as tungsten. The obtained metallized paste is printed and applied to a ceramic green sheet for the ceramic substrate 1 by employing a conventionally known screen printing method, and this is fired together with a green ceramic molded body for the ceramic substrate 1, whereby the outer periphery of the upper surface of the ceramic substrate 1 A predetermined frame-like pattern is formed on the part.
[0020]
The first bonding metallization layer 8 is prevented from being oxidized and corroded on the surface of the first bonding metallization layer 8 and the bonding between the first bonding metallization layer 8 and the brazing material 11 is made strong. Therefore, usually, a nickel plating layer having a thickness of about 1 to 10 μm is applied.
[0021]
The ceramic plate 2 attached to the upper surface of the ceramic substrate 1 is substantially square or substantially made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or a glass-ceramic. It is a substantially flat plate such as an octagon or a circle, and has a frame-shaped protrusion 2a on the outer peripheral portion of its inner main surface. Then, it functions as a so-called pressure detection diaphragm in which a central portion thereof bends to the ceramic base 1 side according to an external pressure.
[0022]
The ceramic plate 2 has a small mechanical strength when the thickness of the central portion is less than 0.01 mm. Therefore, there is a high risk of being destroyed when a large external pressure is applied to the ceramic plate 2. On the other hand, if the thickness of the central portion exceeds 5 mm, it becomes difficult to bend with a small pressure, making it unsuitable as a pressure detecting diaphragm. Therefore, the thickness of the central part of the ceramic plate 2 is preferably in the range of 0.01 to 5 mm. If the height of the protrusion 2a is less than 0.01 mm, the gap formed between the ceramic substrate 1 and the ceramic plate 2 becomes too narrow, and the first metallization is applied when pressure is applied to the ceramic plate 2. There is a great risk that the electrode 7 and the second metallized electrode 9 come into contact with each other. On the other hand, if the height of the protrusion 2a exceeds 5 mm, the gap between the first metallized electrode 7 and the second metallized electrode 9 is increased. The formed capacitance becomes small, and the sensitivity of the pressure sensitive element is lowered. Therefore, the height of the protrusion 2a is preferably in the range of 0.01 to 5 mm.
[0023]
If such a ceramic plate 2 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, solvent, plasticizer, dispersion for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. A ceramic green sheet is obtained by adding a mixing agent to form a slurry, and forming this into a sheet by employing a conventionally known doctor blade method. After that, an appropriate punching process or The green ceramic molded body for the ceramic plate 2 is obtained by cutting, and the green ceramic molded body is manufactured by firing at a temperature of about 1600 ° C.
[0024]
Further, a second metallized electrode 9 for forming a capacitance facing the first metallized electrode 7 is attached to the lower surface of the ceramic plate 2 at the center thereof. The second metallized electrode 9 is for forming a capacitance for a pressure sensitive element together with the first metallized electrode 7 described above, and is formed in a substantially circular pattern, for example.
[0025]
Such a second metallized electrode 9 is made of metal powder metallization of tungsten, molybdenum, copper, silver or the like having a thickness of about 10 to 50 μm, and suitable organic binder, solvent, plasticizer, dispersant for the metal powder such as tungsten. The metallized paste obtained by adding and mixing is printed on a ceramic green sheet for the ceramic plate 2 by using a conventionally well-known screen printing method, and fired together with a green ceramic molded body for the ceramic plate 2 to be ceramic. A predetermined pattern is formed at the center of the lower surface of the plate 2. In order to prevent the second metallized electrode 9 from being oxidatively corroded, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied to the surface of the second metallized electrode 9.
[0026]
Further, a substantially circular or substantially octagonal frame-like second bonding metallization layer 10 electrically connected to the second metallization electrode 9 is deposited on the lower surface of the protrusion 2 a of the ceramic plate 2. The second bonding metallization layer 10 functions as a bonding base metal layer for bonding the ceramic plate 2 to the ceramic substrate 1, and the second bonding metallization layer 10 and the first bonding metallization layer 8 are silver- The ceramic base 1 and the ceramic plate 2 are joined by brazing via a brazing material 11 such as copper brazing, and the first joining metallized layer 8 and the second joining metallized layer 10 are electrically connected. At the same time, a sealed space is formed between the ceramic substrate 1 and the ceramic plate 2.
[0027]
At this time, the first metallized electrode 7 and the second metallized electrode 9 are opposed to each other with a sealed space formed between the ceramic base 1 and the ceramic plate 2 interposed therebetween. A predetermined capacitance is formed according to the area of the electrode 7 or the second metallized electrode 9 and the distance between the first metallized electrode 7 and the second metallized electrode 9. When an external pressure is applied to the upper surface of the ceramic plate 2, the ceramic plate 2 is bent toward the ceramic base 1 in accordance with the pressure, and the interval between the first metallized electrode 7 and the second metallized electrode 9 is changed. As a result, the capacitance between the first metallized electrode 7 and the second metallized electrode 9 changes, so that it functions as a pressure-sensitive element that senses a change in external pressure as a change in capacitance. Then, the change in electrostatic capacity is transmitted to the semiconductor element 3 accommodated in the recess 1a through the metallized wiring conductors 5a and 5b, and this is processed by the semiconductor element 3 so as to know the magnitude of the external pressure. be able to.
[0028]
The second bonding metallization layer 10 is made of metal powder metallization of tungsten, molybdenum, copper, silver, etc. with a thickness of about 10 to 50 μm. The metallized paste obtained by adding and mixing the agent is printed and applied to a ceramic green sheet for the ceramic plate 2 using a conventionally known screen printing method, and is fired together with the green ceramic molded body for the ceramic plate 2 The ceramic plate 2 is formed in a predetermined pattern on the lower surface of the protrusion 2a. Further, in order to prevent the second bonding metallization layer 10 from being oxidatively corroded on the surface of the second bonding metallization layer 10 and to improve the bonding between the second bonding metallization layer 10 and the brazing material 11 Normally, a nickel plating layer having a thickness of about 1 to 10 μm is applied.
[0029]
Furthermore, in the present invention, the thickness of the brazing material 11 for brazing the first bonding metallization layer 8 and the second bonding metallization layer 10 is set to 5 to 30 μm. And that is important. Thus, since the thickness of the brazing material 11 for brazing the first bonding metallization layer 8 and the second bonding metallization layer 10 is reduced to 5 to 30 μm, the ceramic plate 2 is greatly bent by external pressure. Even so, the brazing material 11 does not undergo significant plastic deformation. Therefore, according to the package for a pressure detection device of the present invention, it is possible to provide a pressure detection device that can accurately detect an external pressure over a long period of time.
[0030]
When the thickness of the brazing material 11 for brazing the first bonding metallization layer 8 and the second bonding metallization layer 10 is less than 5 μm, the first bonding metallization layer 8 and the second bonding metallization layer 10 are It tends to be difficult to braze with high strength and airtightness through the brazing material 11. On the other hand, when it exceeds 30 μm, when the external pressure is applied to the ceramic plate 2, the brazing material 11 becomes large. There is a high risk that plastic deformation will occur and the external pressure cannot be detected accurately over a long period of time. Therefore, the thickness of the brazing material 11 for brazing the first bonding metallization layer 8 and the second bonding metallization layer 10 is specified in the range of 5 to 30 μm.
[0031]
Further, in order to join the first joining metallized layer 8 and the second joining metallized layer 10 via the brazing filler metal 11 having a thickness of 5 to 30 μm, the first joining metallized layer 8 and the second joining metallized layer. The nickel base layer having a thickness of about 1 to 10 μm is previously deposited on the surface of 10, and then the ceramic substrate so that the second bonding metallized layer 10 abuts on the first bonding metallized layer. 1 and the ceramic plate 2 are pressed together, and a brazing material foil made of silver-copper brazing having a thickness of about 10 to 200 μm is brought into contact with the outer peripheral portion of the first bonding metallization layer and / or the second bonding metallization layer. These are heated in a reducing atmosphere to a temperature of about 850 ° C. to melt the brazing filler metal foil and penetrate the brazing material between the first bonding metallization layer 8 and the second bonding metallization layer 10. The method of brazing Used.
[0032]
In this way, the first bonding metallization layer 8 and the second bonding metallization layer 10 are pressed and the brazing material foil is in contact with the outer periphery of the first bonding metallization layer 8 and / or the second bonding metallization layer 10. The first bonding metallized layer 8 is melted and brazed by infiltrating a brazing material between the first bonding metallized layer 8 and the second bonding metallized layer 10. And the second bonding metallization layer 10 can be brazed via a thin brazing material 11 having a thickness of 5 to 30 μm.
[0033]
At this time, it is preferable that the inner circumferences of the first bonding metallization layer 8 and the second bonding metallization layer 10 are located 0.05 mm or more outside the inner circumference of the protrusion 2 a of the ceramic plate 2. Since the inner periphery of each of the first bonding metallization layer 8 and the second bonding metallization layer 10 is located 0.05 mm or more outside from the inner periphery of the protrusion 2a, the ceramic plate 2 is greatly bent by external pressure. Even so, the stress generated by the bending is largely concentrated in the vicinity of the root of the inner periphery of the protrusion 2a, and it is effectively prevented from acting on the inner peripheral edge of the brazing material 11 effectively. Therefore, the plastic deformation of the brazing material 11 can be more effectively prevented. In addition, when the first bonding metallization layer 8 and the second bonding metallization layer 10 are brazed via a brazing material 11 such as silver-copper brazing, it is effective that the brazing material 11 flows out to the second metallized electrode 9. Can be prevented.
[0034]
Note that the first bonding metallization layer 8 and the second bonding metallization layer 10 have the ceramic plate 2 exposed to an external pressure when the inner circumference is located outside the inner circumference of the protrusion 2a by less than 0.05 mm. A large amount of stress generated when the brazing material 11 is greatly bent is applied to the inner peripheral edge of the brazing material 11 to increase the risk of plastic deformation of the brazing material 11 and the stress is applied to the inner peripheral side surface of the protrusion 2a. The risk of cracks and chipping occurring in the ceramic plate 2 is increased by being largely applied to the corner between the lower surface. At the same time, when the thickness of the protrusion 2a is as thin as 0.05 mm or less, for example, when the brazing material 11 brazes the first joining metallized layer 8 and the second joining metallized layer 10 through the brazing material 11, The danger of flowing out onto the second metallized electrode 9 becomes large. Accordingly, it is preferable that the inner circumferences of the first bonding metallization layer 8 and the second bonding metallization layer 10 are located outside by 0.05 mm or more from the inner circumference of the protrusion 2a.
[0035]
Thus, according to the package for a pressure detection device of the present invention, the first metallized electrode 7 for forming a capacitance is formed on the other main surface of the ceramic substrate 1 on which the semiconductor element 3 is mounted on one main surface. In addition, the ceramic plate 2 having the second metallized electrode 9 for forming a capacitance facing the first metallized electrode 7 on the inner surface is flexible so as to form a sealed space between the ceramic substrate 1 and the ceramic plate 2. Since the bonding is performed, the container for housing the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the pressure detection device can be reduced in size. In addition, since the first metallized electrode 7 and the second metallized electrode 9 for forming capacitance are connected to the semiconductor element 3 via the metallized wiring conductors 5a and 5b provided on the ceramic substrate 1, the first metallized electrode 7 And the second metallized electrode 9 can be connected to the semiconductor element 3 at a short distance. As a result, an unnecessary capacitance generated between the metallized wiring conductors 5a and 5b is reduced, and the pressure detecting device is highly sensitive. Can be provided.
[0036]
Thus, according to the above-described package for the pressure detection device, the semiconductor element 3 is mounted on the mounting portion 1b, and each electrode of the semiconductor element 3 and the metallized wiring conductor 5 are electrically connected. By sealing, the pressure detection device is small and has high sensitivity.
[0037]
In addition, this invention is not limited to an example of the above-mentioned embodiment, It cannot be overemphasized that a various change is possible if it is a range which does not deviate from the summary of this invention.
[0038]
【The invention's effect】
As described above, according to the method for manufacturing a package for a pressure detection device of the present invention, the thickness of the brazing material joining the ceramic base and the ceramic plate can be reduced, and the external pressure is long on the ceramic plate. Even if a large amount is applied over a period, the amount of plastic deformation of the brazing material can be made extremely small.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detection device of the present invention.
FIG. 2 is a cross-sectional view showing a conventional pressure detection device.
[Explanation of symbols]
1 ... Ceramic substrate
2. Ceramic plate
2a ... Projection
3. Semiconductor device
7. First metallized electrode
8 ... Metalized layer for first bonding
9 ... Second metallized electrode
10 ・ ・ ・ ・ ・ Metalized layer for second bonding
11 Brazing material

Claims (1)

Capacitance formation having a plurality of metallized wiring conductors inside and on the surface, and a mounting portion on which a semiconductor element is mounted on one main surface, and electrically connected to one of the metallized wiring conductors on the other main surface Preparing a ceramic substrate having a first metallization electrode for metal and a frame-shaped first metallization layer for joining, which surrounds the first metallization electrode and is electrically connected to the other metallized wiring conductor ;
A second metallized electrode for forming a capacitance facing the first metallized electrode on one main surface surrounded by the projecting part and having a frame-shaped protrusion on the outer peripheral part of one main surface and the protrusion A frame-like second bonding metallization layer electrically connected to the second metallization electrode on the part and brazed to the first bonding metallization layer via a brazing material; preparing a ceramic plate that will be bonded to the ceramic substrate in a flexible state so as to form a closed space between said other main surface,
Contacting the first bonding metallization layer of the ceramic substrate and the second bonding metallization layer of the ceramic plate;
Disposing a brazing material so as to contact the outer periphery of the first bonding metallization layer or the second bonding metallization layer;
Melting the brazing material while pressing the first bonding metallization layer and the second bonding metallization layer;
Infiltrating the molten brazing material between the first bonding metallization layer and the second bonding metallization layer, and brazing the first bonding metallization layer and the second bonding metallization layer;
A method for manufacturing a package for a pressure detection device, comprising:

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