JP4974424B2 - Package for pressure detection device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a pressure detection device package used in a pressure detection device for detecting pressure.
[0002]
[Prior art]
Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. For example, as shown in a cross-sectional view in FIG. 3, the capacitance type pressure detection device is accommodated in a capacitance type pressure sensitive element 32 and a package 38 on a wiring board 31 made of a ceramic material or a resin material. And a semiconductor element 39 for operation. The pressure sensitive element 32 is made of, for example, an electrically insulating material such as a ceramic material, and has an insulating base 34 having a recess in which one electrode 33 for forming a capacitance is attached at the center of the upper face, and an upper face of the insulating base 34 And an insulating plate 36 which is joined in a flexible state so as to form a sealed space between the insulating substrate 34 and the other electrode 35 for forming a capacitance on the lower surface, and each capacitance. Each of the forming electrodes 33 and 35 is composed of an external lead terminal 37 for electrically connecting to the outside, and the insulating plate 36 bends in response to external pressure, thereby forming each capacitance. The capacitance formed between the electrodes 33 and 35 changes. Then, the external pressure can be detected by performing arithmetic processing on the change of the electrostatic capacitance by the semiconductor element 39 for arithmetic operation.
[0003]
[Problems to be solved by the invention]
However, according to this conventional pressure detection device, since the pressure sensitive element 32 and the semiconductor element 39 are individually mounted on the wiring board 31, the pressure detection device is enlarged and the pressure detection electrode 33 is provided. The wiring between the 35 and the semiconductor element 39 becomes long, and an unnecessary capacitance is formed between the long wiring, so that the sensitivity is low.
[0004]
Therefore, the applicant of the present application previously described in Japanese Patent Application No. 2000-178618, for example, as shown in a sectional view in FIG. An insulating base 21 having a recess 21b for forming a space, and a plurality of wiring conductors 24 disposed on the surface and inside of the insulating base 21 and electrically connected to each electrode of the semiconductor element 23; Between the first electrode 25 for forming a capacitance that is attached to the bottom surface of the recess 21b and is electrically connected to one of the wiring conductors 24, and the recess 21b on the other main surface of the insulating base 21. An insulating plate 22 joined in a flexible state so as to form a sealed space, and is attached to the inner main surface of the insulating plate 22 so as to oppose the first electrode 25, and the other one of the wiring conductors 24. Proposed a package for a pressure sensing device comprising a second electrode 26 for forming a capacitance electrically connected to one of the two. .
[0005]
According to this pressure detection device package, the electrostatic capacity is formed on the bottom surface of the recess 21b of the insulating base having the recess 21a for accommodating the semiconductor element 23 on one main surface and the recess 21b for forming a sealed space on the other main surface. A first electrode 25 for forming is provided, and an insulating plate 22 having a second electrode 26 for forming a capacitance opposite to the first electrode 25 on one main surface is provided between the recess 21b and a sealed space. Since it is formed and joined in a flexible state, the pressure-sensitive element is integrally formed in the package that accommodates the semiconductor element 23. As a result, the pressure detection device can be reduced in size and used for pressure detection. The wiring that connects the electrodes and the semiconductor element can be made short, and unnecessary capacitance generated between these wirings can be made small.
[0006]
The insulating base 21 in the pressure detection device package is manufactured by using a ceramic green sheet laminating method. Specifically, a plurality of flat ceramic green sheets and recesses 21a and 21b are formed. Ceramic green sheets having through holes for printing are prepared, and metallized paste for the wiring conductor 24 and the first electrode 25 is printed and applied to these ceramic green sheets, and then the ceramics on which these metallized pastes are printed and applied The green sheet is produced by laminating the green sheet up and down to form a green ceramic molded body for the insulating substrate 21, and finally firing the green ceramic molded body for the insulating substrate 21 at a high temperature.
[0007]
However, according to this pressure detection device package, the recess 21b for forming a sealed space formed on the other main surface of the insulating base 21 accommodates the semiconductor element 23 formed on one main surface of the insulating base 21. Therefore, when the insulating base 21 is manufactured by the ceramic green sheet laminating method, the ceramic green sheet for the insulating base 21 is laminated. When the green ceramic molded body is formed, the laminating pressure applied through the ceramic green sheet having the through hole for forming the first recess 21a causes the outer periphery of the bottom surface of the recess 21b for forming the sealed space to be insulated. As a result, the bottom surface of the recess 21b for forming the sealed space is likely to be greatly deformed. When such deformation occurs, the first electrode 25 for forming capacitance formed on the bottom surface of the recessed portion 21b for forming the sealed space and the recessed portion 21b are joined so as to form a sealed space. Further, the distance from the second electrode 26 for forming the capacitance formed on the inner main surface of the insulating plate 22 varies, and as a result, the external pressure cannot be accurately detected in the obtained pressure detection device. It had the problem that.
[0008]
The present invention has been completed in view of the above-described conventional problems, and the object of the present invention is that there is no deformation on the bottom surface of the recess in which the first electrode is formed, thereby enabling accurate detection of external pressure. The object is to provide a pressure detection device.
[0009]
[Means for Solving the Problems]
  The package for a pressure detection device of the present invention is formed by laminating a plurality of ceramic layers, and has a first recess for accommodating a semiconductor element on one main surface and a second recess for forming a sealed space on the other main surface. A ceramic substrate having a plurality of metallized wiring conductors disposed on and inside the ceramic substrate and electrically connected to each electrode of the semiconductor element, and attached to the bottom surface of the second recess of the ceramic substrate. And forming a sealed space between the first metallized electrode for capacitance formation electrically connected to one of the metallized wiring conductors and the second recess on the other main surface of the ceramic substrate. A ceramic plate bonded in a flexible state, and is attached to the inner main surface of the ceramic plate so as to face the first metallized electrode, and is electrically connected to the other metallized wiring conductor. A package for a pressure detection device comprising a second metallization electrode for forming a capacitance, wherein the side surface of the first recess is located on the outer peripheral side of the side surface of the second recess, and the metallized wiring conductor is Formed in the center of the bottom of the inside of one recessA frame-shaped first bonding metallization layer that is applied over the entire periphery of the upper surface around the second recess of the ceramic substrate, and a second metallization electrode that is applied over the entire periphery of the lower surface of the ceramic plate. And a frame-like second bonding metallization layer electrically connected to the first and second electrodes through a conductive bonding material.It is characterized by being.
[0010]
  According to the package for the pressure detection device of the present invention, for forming a sealed space in which the side surface of the first recess in which the semiconductor element formed on one main surface of the ceramic base is accommodated is formed on the other main surface of the ceramic base. Since the metallized wiring conductor is formed at the center of the bottom surface inside the first recess, the pressure of the laminate is sealed when the ceramic substrate is manufactured. It does not act to push up the bottom surface of the second concave portion for forming, and therefore, the bottom surface of the second concave portion is not deformed, and the distance between the first metallized electrode and the second metallized electrode for forming the capacitance is a predetermined distance. As a result, the external pressure can be accurately detected.Also, a frame-shaped first bonding metallization layer that is applied over the entire periphery of the upper surface around the second recess of the ceramic substrate, and a second metallized electrode that is applied over the entire periphery of the lower surface outer periphery of the ceramic plate. Since the frame-like second bonding metallization layer electrically connected to the second metallization layer is bonded via the conductive bonding material, the ceramic base and the ceramic plate are firmly bonded, and the second metallization The electrode and the metallized wiring conductor are electrically connected, and it is possible to secure a good sealing property in the sealed space formed by the second recess and the ceramic plate.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a pressure detection device package according to the present invention, in which 1 is a ceramic substrate, 2 is a ceramic plate, and 3 is a semiconductor element.
[0012]
The ceramic substrate 1 is a laminated body made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or a glass-ceramic. For example, the ceramic substrate 1 is made of an aluminum oxide sintered body. If there is, add a suitable organic binder, solvent, plasticizer, and dispersant to ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. Are formed into a sheet shape to obtain a plurality of ceramic green sheets, and then these ceramic green sheets are subjected to appropriate punching, laminating, and cutting processes to produce a raw ceramic for the ceramic substrate 1. A green body is obtained and fired at a temperature of about 1600 ° C. It is manufactured by.
[0013]
The ceramic base 1 is formed with a first recess 1a for accommodating the semiconductor element 3 at the center of the lower surface thereof, thereby functioning as a container for accommodating the semiconductor element 3. The central portion of the bottom surface of the first concave portion 1a is a mounting portion on which the semiconductor element 3 is mounted. The semiconductor device 3 is mounted on the central portion of the bottom surface of the first concave portion 1a and, for example, an epoxy is formed in the first concave portion 1a. The semiconductor element 3 is sealed by filling the resin sealing material 4 such as resin. In this example, the semiconductor element 3 is sealed by filling the first recess 1a with the resin sealing material 4, but the semiconductor element 3 has a lid made of metal or ceramics on the lower surface of the ceramic base 1. You may seal by making it join so that the 1st recessed part 1a may be plugged up. The first concave portion 1a is formed by punching a through hole for forming the first concave portion 1a into a predetermined size and shape in one ceramic green sheet for the ceramic substrate 1. Formed in the center.
[0014]
Also, a plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out on the bottom surface of the first recess 1a, and these metallized wiring conductors 5 and the respective electrodes of the semiconductor element 3 are connected to the solder bumps 6 and the like. The electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are electrically connected to each other through the electrical connection means, and the semiconductor element 3 is fixed in the first recess 1a. In this example, the electrode of the semiconductor element 3 and the metallized wiring conductor 5 are connected via the solder bumps 6. However, the electrode of the semiconductor element 3 and the metalized wiring conductor 5 are connected to other types of electric wires such as bonding wires. It may be connected by a general connection means.
[0015]
The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first metallized electrode 7 and a second metallized electrode 9 to be described later, and a part thereof is a ceramic substrate. The other part is electrically connected to the first metallized electrode 7 and the second metallized electrode 9. Each electrode of the semiconductor element 3 is electrically connected to these metallized wiring conductors 5 via solder bumps 6 and the semiconductor element 3 is sealed with a resin sealing material 4. The portion led out to the lower surface of the outer periphery of the base 1 is joined to the wiring conductor of the external electric circuit board via a conductive bonding material such as solder, so that the semiconductor element 3 accommodated therein is electrically connected to the external electric circuit. It will be.
[0016]
Such a metallized wiring conductor 5 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, dispersant, and the like to metal powder such as tungsten. The metallized paste is printed and applied in a predetermined pattern on a ceramic green sheet for the ceramic substrate 1 by employing a conventionally known screen printing method, and is fired together with a green ceramic molded body for the ceramic substrate 1 to thereby form the ceramic substrate 1. A predetermined pattern is formed inside and on the surface. In order to prevent the metallized wiring conductor 5 from being oxidatively corroded on the exposed surface of the metallized wiring conductor 5 and to improve the bonding between the metallized wiring conductor 5 and the solder or the like, the thickness is usually adjusted. Is sequentially deposited with a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm.
[0017]
In addition, a substantially circular second recess 1b having a depth of about 0.01 to 5 mm is provided at the center of the upper surface of the ceramic substrate 1. The second recess 1b is formed by punching a substantially circular through hole for forming the second recess 1b into a predetermined size in one ceramic green sheet for the ceramic substrate 1. It is formed at the center of the upper surface. As will be described later, the second recess 1b is for forming a sealed space S between the second recess 1b and a first metallized electrode for forming a capacitance on the bottom surface of the second recess 1b. 7 is attached.
[0018]
The first metallized electrode 7 is for forming a capacitance for a pressure sensitive element together with a second metallized electrode 9 to be described later, and is formed in a substantially circular pattern, for example. The first metallized electrode 7 is connected to one of the metallized wiring conductors 5a, whereby the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via an electrical connection means such as a solder bump 6. When connected, the electrode of the semiconductor element 3 and the first metallized electrode 7 are electrically connected.
[0019]
Such a first metallized electrode 7 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten. A metallized paste is printed and applied to a ceramic green sheet for the ceramic substrate 1 using a conventionally known screen printing method, and is fired together with a green ceramic molded body for the ceramic substrate 1 to thereby form the second recess 1b of the ceramic substrate 1. A predetermined pattern is formed on the bottom surface. Note that a nickel plating layer having a thickness of about 1 to 10 μm is normally applied to the exposed surface of the first metallized electrode 7 in order to prevent the first metallized electrode 7 from being oxidized and corroded. .
[0020]
Further, a frame-shaped first bonding metallization layer 8 is applied to the upper surface around the second recess 1b of the ceramic substrate 1, and the second metallization layer 8 is attached to the lower surface of the first bonding metallization layer 8 on the lower surface. The ceramic plate 2 having the metallized electrode 9 and the second metallizing layer 10 for bonding is bonded via a conductive bonding material such as a silver-copper brazing material.
[0021]
One metal metallization wiring conductor 5b is connected to the first bonding metallization layer 8 so that the electrode of the semiconductor element 3 is connected to the metallization wiring conductor 5b via an electrical connection means such as a solder bump 6. When electrically connected, the second metallized electrode 9 and the electrode of the semiconductor element 3 are electrically connected through the metallized wiring conductor 5b, the first metallizing layer 8 for bonding, and the metallizing layer 10 for second bonding. ing.
[0022]
The first bonding metallization layer 8 is made of metal powder metallization such as tungsten, molybdenum, copper, or silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, or dispersant to metal powder such as tungsten. The paste is printed and applied to a ceramic green sheet for the ceramic substrate 1 using a conventionally known screen printing method, and is fired together with a green ceramic molded body for the ceramic substrate 1 to form a frame on the upper surface of the ceramic substrate 1. A predetermined pattern is formed. The surface of the first bonding metallization layer 8 prevents the first bonding metallization layer 8 from being oxidatively corroded and provides a strong bond between the first bonding metallization layer 8 and the conductive bonding material. For this purpose, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied.
[0023]
The ceramic plate 2 is joined to the upper surface of the ceramic substrate 1 so as to form a sealed space S between the second recess 1b. The ceramic plate 2 is a substantially flat plate having a thickness of 0.01 to 5 mm made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or glass-ceramics. It functions as a so-called pressure detecting diaphragm that bends accordingly.
[0024]
In addition, since the mechanical strength of the ceramic plate 2 is less than 0.01 mm, the mechanical strength becomes small. Therefore, there is a high risk of being destroyed when a large external pressure is applied thereto. On the other hand, when it exceeds 5 mm, it becomes difficult to bend at a small pressure, and it becomes unsuitable as a diaphragm for pressure detection. Therefore, the thickness of the ceramic plate 2 is preferably in the range of 0.01 to 5 mm.
[0025]
If such a ceramic plate 2 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, solvent, plasticizer, dispersion for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. A ceramic green sheet is obtained by adding an agent and mixing it into a mud and forming it into a sheet using the well-known doctor blade method, and then punching or cutting the ceramic green sheet appropriately. The green ceramic molded body for the ceramic plate 2 is obtained by processing, and the green ceramic molded body is manufactured by firing at a temperature of about 1600 ° C.
[0026]
A substantially circular second metallized electrode 9 for forming a capacitance is attached to the center of the lower surface of the ceramic plate 2. The second metallized electrode 9 functions as an electrode for forming a capacitance for the pressure sensitive element together with the first metallized electrode 7 described above.
[0027]
Such a second metallized electrode 9 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten. The metallized paste is printed and applied to a ceramic green sheet for the ceramic plate 2 using a well-known screen printing method, and is fired together with a green ceramic molded body for the ceramic plate 2 to thereby center the lower surface of the ceramic plate 2 In a predetermined pattern. In order to prevent the second metallized electrode 9 from being oxidized and corroded, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied to the exposed surface of the second metallized electrode 9. .
[0028]
Further, a frame-like second bonding metallization layer 10 electrically connected to the second metallization electrode 9 is attached to the outer peripheral portion of the lower surface of the ceramic plate 2. The second bonding metallization layer 10 functions as a bonding base metal layer for bonding the ceramic plate 2 to the ceramic substrate 1, and the first bonding metallization layer 8 and the second bonding metallization layer 10 are made of silver-copper. The ceramic plate 2 is bonded to the ceramic base 1 by bonding via a conductive bonding material such as brazing, and the metallized wiring conductor 5b and the second metallized electrode 9 are electrically connected.
[0029]
Such a second bonding metallization layer 10 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and an appropriate organic binder, solvent, plasticizer, and dispersant are added to and mixed with metal powder such as tungsten. The obtained metallized paste is printed and applied to a ceramic green sheet for the ceramic plate 2 by using a conventionally known screen printing method, and this is fired together with a green ceramic molded body for the ceramic plate 2 to form a lower surface of the ceramic plate 2. A predetermined pattern is formed on the outer periphery. In order to prevent the second bonding metallization layer 10 from being oxidatively corroded on the surface of the second bonding metallization layer 10 and to improve the bonding between the second bonding metallization layer 10 and the conductive bonding material. Further, usually, a nickel plating layer having a thickness of about 1 to 10 μm is applied.
[0030]
At this time, the first metallized electrode 7 and the second metallized electrode 9 are opposed to each other with a sealed space S formed between the ceramic base 1 and the ceramic plate 2 interposed therebetween. A predetermined capacitance is formed according to the area of the metallized electrode 7 or the second metallized electrode 9 and the distance between the first metallized electrode 7 and the second metallized electrode 9. When an external pressure is applied to the upper surface of the ceramic plate 2, the ceramic plate 2 is bent toward the ceramic base 1 in accordance with the pressure, and the interval between the first metallized electrode 7 and the second metallized electrode 9 is changed. As a result, the capacitance between the first metallized electrode 7 and the second metallized electrode 9 changes, so that it functions as a pressure-sensitive element that senses a change in external pressure as a change in capacitance. Then, the change in electrostatic capacity is transmitted to the semiconductor element 3 accommodated in the first recess 1a through the metallized wiring conductors 5a and 5b, and this is processed by the semiconductor element 3 so that the magnitude of the external pressure is increased. Can know.
[0031]
  And in this invention, the side surface of the 1st recessed part 1a is located in the outer peripheral side rather than the side surface of the 2nd recessed part 1b,The metallized wiring conductor 5 is formed at the center of the bottom surface inside the first recess 1a,That is important. As described above, according to the pressure detection device package of the present invention, since the side surface of the first recess 1a is located on the outer peripheral side of the side surface of the second recess 1b, the ceramic green sheets for the ceramic substrate 1 are laminated. Thus, when obtaining a green ceramic molded body, the pressure of the lamination applied through the ceramic green sheet having the through hole for forming the first recess 1a acts to push up the bottom peripheral portion of the second recess 1b. As a result, no deformation occurs on the bottom surface of the second recess 1b. Therefore, the distance between the first metallized electrode 7 and the second metallized electrode 9 does not vary, and the external pressure can be accurately detected.
[0032]
When the side surface of the first recess 1a is located outside the side surface of the second recess 1b by more than 2 mm, the laminating pressure greatly acts on the outer peripheral portion of the bottom surface of the first recess 1a when the ceramic base 1 is manufactured. As a result, a large deformation is likely to occur on the bottom surface of the first recess 1a. If such a large deformation occurs on the bottom surface of the first recess 1a, it is difficult to normally mount the semiconductor element 3 on the bottom surface of the first recess 1a. . Therefore, it is preferable that the position of the side surface of the first recess 1a is located 2 mm or less on the outer peripheral side than the side surface of the second recess 1b.
[0033]
As described above, according to the pressure detection device package of the present invention, the first metallized electrode for forming a capacitance is formed on the other main surface of the ceramic substrate 1 on which the semiconductor element 3 is mounted on one main surface. 7 and a ceramic plate 2 having a second metallized electrode 9 for forming a capacitance opposed to the first metallized electrode 7 on the inner main surface is formed so as to form a sealed space S between the ceramic substrate 1 and the ceramic substrate 1. Since the bonding is performed in a flexible state, the container for housing the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the pressure detection device can be reduced in size. In addition, since the first metallized electrode 7 and the second metallized electrode 9 for forming capacitance are connected to the semiconductor element 3 via the metallized wiring conductors 5a and 5b provided on the ceramic substrate 1, the first metallized electrode 7 And the second metallized electrode 9 can be connected to the semiconductor element 3 at a short distance. As a result, an unnecessary capacitance generated between the metallized wiring conductors 5a and 5b is reduced, and the pressure detecting device is highly sensitive. Can be provided.
[0034]
In addition, when the space | interval of the 1st metallization electrode 7 and the 2nd metallization electrode 9 is less than 0.01 mm in 1 atmosphere, when a big pressure is applied to the ceramic board 2, the 1st metallization electrode 7 and the 2nd metallization electrode There is a risk that the pressure cannot be detected due to contact with 9, and on the other hand, if the thickness exceeds 5 mm, the capacitance formed between the first metallized electrode 7 and the second metallized electrode 9 is increased. It tends to be small, and the sensitivity to detect pressure tends to be low. Therefore, the distance between the first metallized electrode 7 and the second metallized electrode 9 is preferably in the range of 0.01 to 5 mm at 1 atmosphere.
[0035]
Thus, according to the above-described package for a pressure detection device, the semiconductor element 3 is mounted on the bottom surface of the first recess 1a, and each electrode of the semiconductor element 3 and the metallized wiring conductor 5 are electrically connected. By sealing 3, the pressure detection device is small and highly sensitive, and can accurately detect the external pressure.
[0036]
Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.
[0037]
【The invention's effect】
  As described above, according to the pressure detection device package of the present invention, the side surface of the first recess in which the semiconductor element formed on one main surface of the ceramic base is accommodated is the other main surface of the ceramic base. Since the metallized wiring conductor is formed at the center of the bottom surface inside the first recess, it is located on the outer peripheral side of the formed second recess for forming the sealed space. The laminating pressure applied through the ceramic green sheet having the through hole for forming the one recess 1a does not act to push up the bottom peripheral portion of the second recess 1b, and as a result, the second recess 1b. No deformation occurs on the bottom. Accordingly, it is possible to provide a small and highly sensitive pressure detecting device package capable of accurately detecting an external pressure with a predetermined distance between the first metallized electrode and the second metallized electrode for forming a capacitance. it can.Also, a frame-shaped first bonding metallization layer that is applied over the entire periphery of the upper surface around the second recess of the ceramic substrate, and a second metallized electrode that is applied over the entire periphery of the lower surface outer periphery of the ceramic plate. Since the frame-like second bonding metallization layer electrically connected to the second metallization layer is bonded via the conductive bonding material, the ceramic base and the ceramic plate are firmly bonded, and the second metallization The electrode and the metallized wiring conductor are electrically connected, and it is possible to secure a good sealing property in the sealed space formed by the second recess and the ceramic plate.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detection device of the present invention.
FIG. 2 is a cross-sectional view of a conventional package for a pressure detection device.
FIG. 3 is a cross-sectional view showing a conventional pressure detection device.
[Explanation of symbols]
1 ... Ceramic substrate
1a ・ ・ ・ ・ ・ ・ ・ First recess
1b ・ ・ ・ ・ ・ ・ ・ Second recess
2 ... Ceramic plate
3 ... Semiconductor element
5 ... Metalized wiring conductor
7 ... 1st metallized electrode
9 ... 2nd metallized electrode
S ・ ・ ・ ・ ・ ・ ・ ・ Enclosed space

Claims (1)

A ceramic base having a plurality of ceramic layers laminated, having a first recess for accommodating a semiconductor element on one main surface and a second recess for forming a sealed space on the other main surface; A plurality of metallized wiring conductors disposed on the surface and inside, and electrically connected to each electrode of the semiconductor element, and are attached to the bottom surface of the second recess, and one of the metallized wiring conductors An electrically connected first metallization electrode for forming a capacitance, and a ceramic plate joined in a flexible state so as to form a sealed space between the second main surface and the second recess. The second metallization for forming a capacitance, which is attached to the inner main surface of the ceramic plate so as to face the first metallization electrode and is electrically connected to the other metallization wiring conductor. Electrodes and A package for a pressure detecting device, wherein the side surface of the first recess is located on the outer peripheral side of the side surface of the second recess, and the metallized wiring conductor is in the center of the bottom surface inside the first recess A frame-shaped first bonding metallization layer formed over the entire periphery of the upper surface around the second recess of the ceramic substrate, and applied over the entire periphery of the lower surface outer periphery of the ceramic plate. And a frame-like second metallization layer for bonding, which is electrically connected to the second metallized electrode, and is bonded via a conductive bonding material .

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