JP2005283175A - Pressure detecting apparatus and package for the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for a pressure detecting apparatus which is compact and highly reliable, has high sensitivity in detecting pressure exerted from the outside, and is capable of accurate detection over a long period. <P>SOLUTION: The package for the pressure detecting apparatus is provided with an insulating substrate 1, having a mounting part 1b for mounting a semiconductor device 3 in one main surface; a plurality of wiring conductors 5, arranged in the surface and inside of the insulating substrate 1 and each electrically connected to electrodes of the semiconductor device 3; an insulating plate 2 in a flexible state joined to the insulating substrate 1 so as to form a sealed space in-between with the other main surface of the insulating substrate 1; a first electrode 7 for forming electrostatic capacitance deposited to the other main surface of the insulating substrate 1 in the sealed space and electrically connected to one of the wiring conductors 5; and a second electrode 9 for forming electrostatic capacitance, deposited to the inside main surface of the insulating plate 2, in such a way as to face to the first electrode 7 and electrically connected to another electrode of the wiring conductors 5. The insulating plate 2 is jointed in such a state as to be inclined to the other main surface of he insulating substrate 1, and the first electrode 7 is inclined, in such a way that its surface facing the second electrode 9 is in parallel with the second electrode 9. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a pressure detection device package and a pressure detection device used in a pressure detection device for detecting pressure.

  Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. As shown in a cross-sectional view in FIG. 3, this capacitance type pressure detection device has a capacitance type pressure sensitive element 22 and a pressure detection device package on a wiring board 21 made of a ceramic material or a resin material. 28 and a semiconductor element 29 for calculation contained in 28.

  The pressure sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material, and has an insulating base 24 having a concave portion with a capacitance forming electrode 23 attached to the center of the upper surface thereof. An insulating plate 26 is bonded to the upper surface in a flexible state so that the concave portion of the insulating base 24 becomes a sealed space, and an electrostatic capacitance forming electrode 25 is attached to the main surface on the sealed space side. Each of the capacitance forming electrode 23 and the electrode 25 is composed of an external lead terminal 27 for electrically connecting to the outside. As a result, the capacitance formed between the electrode 23 and the electrode 25 is changed by bending the insulating plate 26 according to the pressure applied from the outside, and this change is processed by the semiconductor element 29 for calculation. Thus, the pressure applied from the outside can be detected.

  However, according to this conventional pressure detection device, since the pressure sensitive element 22 and the semiconductor element 29 are individually mounted on the wiring board 21, the pressure detection device is enlarged and the pressure detection electrode 23 and The wiring conductor that connects the electrode 25 and the semiconductor element 29 becomes long, and there is a problem that sensitivity is lowered because unnecessary capacitance is generated.

  Therefore, as shown in a cross-sectional view in FIG. 2, an insulating base 11 having a mounting portion 11 b on which the semiconductor element 13 is mounted on one main surface, and the surface and inside of the insulating base 11 are provided. A plurality of wiring conductors 15 that are electrically connected to each other and a central portion of the other main surface of the insulating base 11 are attached to the wiring conductor 15a that is one of the wiring conductors 15 and electrically connected to the wiring conductor 15a. Insulating plate joined in a flexible state so as to form a sealed space between the first electrode 17 for forming capacitance and the other main surface of the insulating substrate 11 and the central portion of the main surface. 12 is formed on the inner surface of the insulating plate 12 so as to face the first electrode 17 and is electrically connected to a wiring conductor 15b, which is another wiring conductor 15. And a second electrode 19 for the pressure sensing device package is proposed. And are (for example, see Patent Document 1 below).

  According to this pressure detection device package, since the pressure sensitive element is integrally formed in the pressure detection device package that accommodates the semiconductor element 13, the pressure detection device can be reduced in size and the pressure detection electrode and The wiring conductor 15 connecting the semiconductor element 13 can be shortened, and unnecessary capacitance generated between the plurality of wiring conductors 15 can be reduced.

  Conventionally, the wiring conductor 15 of the pressure detection device package, the first electrode 17 for forming the capacitance, and the second electrode 19 are made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc. A metallized paste obtained by adding and mixing an appropriate organic binder, solvent, plasticizer and dispersant is printed on a ceramic green sheet by a conventionally known screen printing method or the like, and these are ceramics to be the insulating substrate 11 and the insulating plate 12. The green sheet is manufactured by firing together with a green ceramic molded body laminated on top and bottom.

  Further, in order to use the first electrode 17 and the second electrode 19 for forming a capacitance, it is necessary to form a certain space region between the first electrode 17 and the second electrode 19. Alternatively, by forming the frame-shaped protrusion 12 a on the outer peripheral portion of the insulating plate 12, a sealed space for forming a capacitance is formed between the insulating base 11 and the insulating plate 12.

  The insulating substrate 11 and the insulating plate 12 are a first bonding metallized layer 18 provided around the first electrode 17 on the insulating substrate 11 and a second bonding material provided on the outer periphery of the insulating plate 12. The metallized layer 20 is attached by bonding with a conductive bonding material such as a brazing material.

In addition, the insulating plate 12 having such a protruding portion 12a is formed with the ceramic green sheet for the protruding portion 12a in which a through hole for forming a sealed space is formed by a punching method or the like, and the second electrode 19. Further, it is formed by laminating ceramic green sheets for the bottom plate portion 12b, which is a part forming a sealed space, to form a ceramic green sheet for the insulating plate 12, and firing at a high temperature.
JP 2001-356064 A

  However, in the conventional pressure detection device package, when the pressure detection device package is mounted as a pressure device in parallel to the direction of centrifugal acceleration, the insulating plate 12 can be used for centrifugal acceleration in addition to external pressure. May be bent under the action. For this reason, the first electrode 7 and the second electrode 9 are likely to come into contact with each other, and there is a problem in that external pressure cannot be accurately detected.

  Further, if the distance between the first electrode 17 and the second electrode 19 is increased in consideration of the effect of centrifugal acceleration, the capacitance value formed by the first electrode 17 and the second electrode 19 decreases. For this reason, the sensitivity to fluctuations in the external pressure is reduced, and the external pressure cannot be detected well.

  Accordingly, the present invention has been devised in view of the related problems, and an object of the present invention is to provide a pressure detection device package and a pressure detection device that can detect external pressure with high accuracy and good accuracy. There is to do.

  The package for a pressure detection device according to the present invention includes an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and a surface and an inside of the insulating base, and each electrode of the semiconductor element is electrically An insulating plate joined to the insulating substrate in a flexible state so as to form a sealed space between the plurality of wiring conductors connected to the other main surface of the insulating substrate, and the inside of the sealed space A first electrode for forming a capacitance that is attached to the other main surface of the insulating base and is electrically connected to one of the wiring conductors, and a first electrode on the inner main surface of the insulating plate. A package for a pressure detection device, comprising: a second electrode for forming a capacitance that is attached so as to face an electrode and is electrically connected to the other one of the wiring conductors; Is joined to the other main surface of the insulating base in an inclined state. Wherein the first electrode is characterized in that the second electrode and the opposing surfaces are inclined so as to be parallel to the second electrode.

  The pressure detection device of the present invention includes the pressure detection device package of the present invention, the semiconductor element mounted on the mounting portion and having the electrode electrically connected to the wiring conductor, and the one of the insulating substrates. A lid attached to cover the semiconductor element around the mounting portion of the main surface, or a sealing resin attached to the one main surface of the insulating base so as to cover the semiconductor element. It is characterized by having.

  According to the package for a pressure detection device of the present invention, the insulating plate is joined in an inclined state with respect to the other main surface of the insulating base, and the first electrode has a second surface facing the second electrode. Since it is inclined so as to be parallel to the electrode, it is possible to detect the external pressure well while maintaining the flexibility of the insulating plate against the change of the external pressure, and to incline the insulating plate. Thus, the direction of centrifugal acceleration of the pressure device can be inclined to reduce the influence of centrifugal acceleration on the insulating plate.

  The pressure device according to the present invention includes a package for the pressure detection device according to the present invention, a semiconductor element mounted on the mounting portion and an electrode electrically connected to the wiring conductor, and a mounting portion on one main surface of the insulating base. And a sealing resin attached to cover the semiconductor element on one main surface of the cover body or the insulating base attached so as to cover the semiconductor element. The external pressure having the characteristics of the package can be detected accurately and satisfactorily.

  Next, the pressure detection device package of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a pressure detecting device package according to the present invention. In FIG. 1, 1 is an insulating substrate, 2 is an insulating plate, 3 is a semiconductor element, 7 is a first electrode, Reference numeral 9 denotes a second electrode.

  The insulating substrate 1 and the insulating plate 2 are made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic. Consists of. If the insulating base 1 and the insulating plate 2 are made of, for example, an aluminum oxide sintered body, a suitable organic binder, solvent, plastics for ceramic raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide are used. Add and mix the agent and dispersant to make a mud, and by molding this into a sheet by a conventionally known doctor blade method, etc., a plurality of ceramic green sheets are obtained. Appropriate punching, laminating, cutting and the like are performed, and a green ceramic molded body is formed by stacking up and down, and is fired at a temperature of about 1600 ° C.

  The insulating base 1 has a concave portion 1a formed on one main surface (the lower surface in FIG. 1), and the concave portion 1a has a mounting portion 1b for mounting the semiconductor element 3 at the center of the bottom surface. The insulating substrate 1 functions as a container for housing the semiconductor element 3. The semiconductor element 3 is mounted on the mounting portion 1b and sealed by being covered in the recess 1a with a sealing resin 4 such as an epoxy resin. Alternatively, the insulating base 1 may be sealed by joining a lid made of metal, ceramics, or the like to one main surface so as to close the recess 1a.

  A plurality of wiring conductors 5 are led out to the mounting portion 1b, and the wiring conductor 5 and each electrode of the semiconductor element 3 are joined via a conductive bonding material 6 such as a solder bump, so that the semiconductor element 3 Each electrode and each wiring conductor 5 are electrically connected, and the semiconductor element 3 is attached to the mounting portion 1b. Alternatively, the semiconductor element 3 may be connected to the wiring conductor 5 by other electrical connection means such as a bonding wire.

  The wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to the external electric circuit, the first electrode 7 and the second electrode 9, and a part of the wiring conductor 5 is one main part of the insulating substrate 1. It is led out to the outer peripheral part of the surface, and another part is electrically connected to the first electrode 7 and the second electrode 9.

  Such a wiring conductor 5 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, dispersant, and the like to metal powder such as tungsten. The paste is printed and applied in a predetermined pattern on a ceramic green sheet for the insulating substrate 1 by a well-known screen printing method, and this is fired together with a green ceramic molded body for the insulating substrate 1 to form the inside and the surface of the insulating substrate 1. A predetermined pattern is formed. The exposed surface of the wiring conductor 5 has a thickness of 1 in order to prevent the wiring conductor 5 from being oxidatively corroded and to improve the bonding between the wiring conductor 5 and the conductive bonding material 6 such as solder. It is preferable that a nickel plating layer having a thickness of about 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.

  A first electrode 7 for forming a capacitance is attached to the center of the other main surface (upper surface in FIG. 1) of the insulating substrate 1, and this first electrode 7 is a part of the wiring conductor 5. Is electrically connected to the wiring conductor 5a. The first electrode 7 and the electrode of the semiconductor element 3 are electrically connected by connecting the electrode of the semiconductor element 3 to the wiring conductor 5a via the conductive bonding material 6 such as a solder bump. Further, the first electrode 7 is formed in a circular shape in plan view, for example.

  A frame-like first bonding metallization layer 8 is deposited on the outer peripheral portion of the other main surface of the insulating substrate 1 over the entire periphery, and an insulating plate having the metallized layer 8 and a protrusion 2a described later. The second metallization layer for bonding 2 is bonded via a brazing material such as a silver-copper brazing material, whereby a sealed space is formed between the insulating base 1 and the insulating plate 2.

  The first bonding metallized layer 8 is electrically connected to a wiring conductor 5b, which is one of the metallized wiring conductors 5. The conductive bonding material 6 such as a solder bump is connected to the electrode of the semiconductor element 3 on the wiring conductor 5b. The electrode of the semiconductor element 3 and the second electrode 9 are electrically connected by being electrically connected via.

  The insulating plate 2 has a rectangular shape, a polygonal shape such as an octagonal shape, or a flat plate shape such as a circular shape. A frame-shaped protrusion 2a having a height of 0.01 to 5 mm is formed on the outer peripheral portion of the main surface on the insulating base 1 side. By being formed, a sealed space can be formed between the insulating plate 2 and the insulating substrate 1. Then, the bottom plate portion 2b, which is a portion forming the sealed space of the insulating plate 2, bends toward the insulating base 1 according to the pressure applied from the outside, and functions as a so-called pressure detecting diaphragm.

  The insulating plate 2 has a low mechanical strength when the thickness of the bottom plate portion 2b is less than 0.01 mm, and is easily broken when the pressure applied from the outside is large. On the other hand, if the thickness of the bottom plate portion 2b exceeds 5 mm, the bottom plate portion 2 is difficult to bend when the pressure applied from the outside is small, and the accuracy as a pressure detecting diaphragm is likely to be lowered. Therefore, the thickness of the bottom plate portion 2b of the insulating plate 2 is preferably in the range of 0.01 to 5 mm.

  A second electrode 9 for forming a capacitor is attached to the bottom plate portion 2b of the insulating plate 2. The second electrode 9 is formed in a circular shape, for example, and forms a capacitance for the pressure sensitive element so as to face the first electrode 7 described above.

  The first electrode 7 and the second electrode 9 as described above are made of metal powder metallization such as tungsten, molybdenum, copper, and silver having a thickness of about 10 to 50 μm, and are formed by the same method as the wiring conductor 5. Further, a nickel plating layer having a thickness of about 1 to 10 μm is preferably deposited on the surfaces of the first electrode 7 and the second electrode 9 in order to prevent oxidative corrosion.

  Further, a polygonal or circular frame-shaped second bonding metallization layer 10 electrically connected to the second electrode 9 is attached to the main surface of the protrusion 2a of the insulating plate 2 on the insulating base 1 side. ing. The second bonding metallization layer 10 functions as a bonding base metal layer for bonding the insulating plate 2 to the insulating substrate 1, and the second bonding metallization layer 10 and the first bonding metallization layer 8 are silver- The first metallization layer 8 for bonding and the second metallization layer 10 for bonding are electrically connected to each other through a brazing material such as copper brazing.

  At this time, the first electrode 7 and the second electrode 9 are opposed to each other with a sealed space formed between the insulating base 1 and the insulating plate 2 interposed therebetween, and the first electrode 7 and the second electrode 9 are interposed between the electrodes. A predetermined capacitance is formed according to the area of the first electrode 7 and the distance between the first electrode 7 and the second electrode 9. Then, the bottom plate portion 2b of the insulating plate 2 bends toward the insulating base 1 according to the pressure applied to the other main surface of the insulating plate 2 from the outside, and the distance between the first electrode 7 and the second electrode 9 changes. By changing the capacitance, it functions as a pressure-sensitive element that senses a change in pressure applied from the outside as a change in capacitance. Further, the change in capacitance is transmitted to the semiconductor element 3 accommodated in the recess 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the pressure applied from the outside is known by performing arithmetic processing in the semiconductor element 3. be able to.

  The first bonding metallization layer 8 and the second bonding metallization layer 10 are made of metal powder metallization of tungsten, molybdenum, copper, silver or the like having a thickness of about 10 to 50 μm, and are similar to the wiring conductor 5 described above. It is formed by the method. It should be noted that the surfaces of the first bonding metallization layer 8 and the second bonding metallization layer 10 are prevented from being oxidized and corroded, and the first bonding metallization layer 8 and the second bonding metallization layer 10 are bonded to the brazing material. In order to strengthen the thickness, a nickel plating layer having a thickness of about 1 to 10 μm is preferably applied.

  In addition, in the bonding of the insulating substrate 1 and the insulating plate 2, a nickel plating layer having a thickness of about 1 to 10 μm is previously deposited on the surfaces of the first bonding metallization layer 8 and the second bonding metallization layer 10, respectively. In addition, a brazing material foil made of silver-copper brazing having a thickness of about 10 to 200 μm is sandwiched between the metallizing layer 8 for the first bonding and the metallizing layer 10 for the second bonding, and these are about 850 ° C. in a reducing atmosphere. This is performed by melting the brazing material foil by heating to a temperature of 1 mm and brazing the metallized layer 8 for first bonding and the metallized layer 10 for second bonding.

  The insulating plate 2 of the present invention is joined in an inclined state to the other main surface of the insulating base 1, and the first electrode 7 has a surface facing the second electrode 9 parallel to the second electrode 9. It is inclined to become. Thereby, while maintaining the flexibility of the insulating plate 2 with respect to the change of the external pressure, it is possible to detect the external pressure well, and by tilting the insulating plate 2, the centrifugal force of the pressure device can be reduced. The influence of centrifugal acceleration on the insulating plate 2 can be reduced by inclining the direction in which the acceleration is applied.

  The insulating plate 2 of such a pressure detection device package forms, for example, a through hole serving as a sealed space in the ceramic green sheet for the protrusion 2a using a punching die or the like. And after printing the conductor paste used as the 2nd electrode, the metallization layer 10 for 2nd joining, and the wiring conductor 5 on the ceramic green sheet for the protrusion part 2a, and the ceramic green sheet for the baseplate part 2b by a screen printing method etc., ceramic It is manufactured by laminating green sheets, performing a predetermined cutting process, and firing at a high temperature.

  Further, by polishing the first bonding metallization layer 8 and the first electrode 7, the surfaces of the first bonding metallization layer 8 and the first electrode 7 are inclined with respect to the other main surface of the insulating substrate 1. can do. Then, by bonding the first bonding metallization layer 8 and the second bonding metallization layer 10, the insulating plate 2 is bonded in a state inclined with respect to the other main surface of the insulating substrate 1. The one electrode 7 is inclined so that the surface facing the second electrode 9 is parallel to the second electrode 9.

  The other main surface of the insulating substrate 1 may be formed by pressing or the like so that the surfaces of the first bonding metallized layer 8 and the first electrode 7 are inclined with respect to the other main surface of the insulating substrate 1. Absent.

  Moreover, you may form the projection part 2a for forming sealed space by pressing a ceramic green sheet for the single layer insulation boards 2 using a metal mold | die etc. FIG. In this case, the end of the protrusion 2a on the bottom plate portion 2b side, that is, the corner between the inner surface of the protrusion 2a and the main surface of the bottom plate 2b can be a curved surface, and is added to the corner therebetween. The stress can be more effectively dispersed, and the occurrence of cracks and the like in the insulating plate 2 can be more effectively prevented.

  Further, since the bottom plate portion 2b of the insulating plate 2 is formed while being pressed by pressing, the warping and twisting of the bottom plate portion 2b can be extremely reduced, and the insulating plate 2 is formed from a single-layer ceramic green sheet. Therefore, the height of the projecting portion 2a can be reduced, and the distance between the first electrode 7 and the second electrode 9 can be reduced to provide a highly sensitive pressure detecting device package.

  The angle formed by the main surface of the insulating plate 2 and the main surface of the insulating base 1 is preferably 10 to 45 degrees.

If it is less than 45 degrees, the effect of reducing the influence of centrifugal acceleration tends to be small. Moreover, when it exceeds 10 degree | times, a pressure detection apparatus will become easy to enlarge.

  In addition, after the second bonding metallization layer 10 and the second electrode 9 on the insulating plate 2 side are inclined with respect to the inner main surface of the insulating plate 2 by polishing or the like, the insulating substrate 1 and the insulating plate 2 are bonded together. Also good. Also by such a method, the insulating plate 2 can be joined in an inclined state with respect to the other main surface of the insulating base 1, and the main surface of the first electrode 7 and the main surface of the second electrode 9 are It can be in a state of facing each other in parallel.

  The insulating substrate 1 and the insulating plate 2 are bonded after the second bonding metallization layer 10 and the second electrode 9 on the insulating plate 2 side are inclined with respect to the inner main surface of the insulating plate 2 by polishing or the like. In this case, the thickness of the second electrode 9 located in the flexible region is not uniform, but it is possible to incline the first bonding metallization layer 8 and the first electrode 7 of the insulating base 1. It is more preferable because the thickness of the second electrode 9 located in the flexure region can be made uniform and the detection accuracy can be made higher.

  Thus, according to the package for a pressure detection device of the present invention, the first electrode 7 for forming a capacitance is attached to the other main surface of the insulating substrate 1 on which the semiconductor element 3 is mounted on one main surface. In addition, the inner surface of the insulating plate 2 joined to the insulating substrate 1 in a flexible state so as to form a sealed space with the insulating substrate 1 is covered with the first electrode 7 so as to face the first electrode 7. Since the attached second electrode 9 for forming capacitance is provided, the container for housing the semiconductor element 3 and the pressure sensitive element are integrated, and the pressure detection device can be miniaturized.

  In addition, the first electrode 7 and the second electrode 9 for forming capacitance are connected to the respective electrodes of the semiconductor element 3 via the wiring conductors 5a and 5b disposed on the surface and inside of the insulating base 1. Therefore, the first electrode 7 and the second electrode 9 can be connected to the semiconductor element 3 at a short distance, and as a result, the unnecessary capacitance generated between the wiring conductors 5a and 5b is reduced to a small sensitivity. It is possible to provide a high pressure detection device package.

  The pressure device according to the present invention includes the above-described pressure detection device package, the semiconductor element 3 mounted on the mounting portion 1 b and having the electrode electrically connected to the wiring conductor 5, and one main surface of the insulating substrate 1. A lid attached so as to cover the semiconductor element 3 around the mounting portion 1b or a sealing resin 4 attached so as to cover the semiconductor element 3 on one main surface of the insulating substrate 1 is provided. . Accordingly, the external pressure can be accurately and satisfactorily detected with the characteristics of the pressure detecting device package.

  The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in FIG. 1, the insulating base 1 and the insulating plate 2 are joined by a conductive bonding material, but after laminating the ceramic green sheet for the insulating base 1 and the ceramic green sheet for the insulating plate 2, It may be sintered and integrated, or the projecting portion 2a may be formed on the insulating base 1 side, and the sealed space may be formed so as to be joined to the bottom plate portion 2b of the insulating plate 2. .

  The present invention can be used for a pressure detection device for detecting a pressure state of a tire or the like.

It is sectional drawing which shows an example of embodiment of the package for pressure detection apparatuses of this invention. It is sectional drawing of the conventional package for pressure detection apparatuses. It is sectional drawing of the conventional pressure detection apparatus.

Explanation of symbols

1 ·········· Insulation base 1b ····· Mounting portion 2 ··············· Insulating plate 3 ... Semiconductor element 5, 5a, 5b ... Wiring conductor 7 ... 1st electrode 9 ... 2nd electrode

Claims (2)

An insulating base having a mounting portion on which a semiconductor element is mounted on one main surface; and a plurality of wiring conductors disposed on and inside the insulating base and electrically connected to the electrodes of the semiconductor element; An insulating plate joined to the insulating base in a flexible state so as to form a sealed space with the other main surface of the insulating base; and the other main surface of the insulating base in the sealed space. A first electrode for forming a capacitance that is attached and electrically connected to one of the wiring conductors, and is attached to the inner main surface of the insulating plate so as to face the first electrode; And a second electrode for forming a capacitance electrically connected to the other one of the wiring conductors, wherein the insulating plate is the other main surface of the insulating substrate. The first electrode is opposed to the second electrode. Package for pressure detection apparatus characterized by that the surface is inclined to be parallel to the second electrode. The package for a pressure detection device according to claim 1, the semiconductor element mounted on the mounting portion and the electrode electrically connected to the wiring conductor, and the mounting of the one main surface of the insulating base A lid attached to cover the semiconductor element around the portion, or a sealing resin attached to the one main surface of the insulating base so as to cover the semiconductor element. A pressure detection device.

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