JP2005183619A5 - - Google Patents

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Publication number
JP2005183619A5
JP2005183619A5 JP2003421309A JP2003421309A JP2005183619A5 JP 2005183619 A5 JP2005183619 A5 JP 2005183619A5 JP 2003421309 A JP2003421309 A JP 2003421309A JP 2003421309 A JP2003421309 A JP 2003421309A JP 2005183619 A5 JP2005183619 A5 JP 2005183619A5
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JP
Japan
Prior art keywords
memory device
dielectric material
substrate
switching element
storage element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003421309A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005183619A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003421309A priority Critical patent/JP2005183619A/ja
Priority claimed from JP2003421309A external-priority patent/JP2005183619A/ja
Priority to PCT/JP2004/018522 priority patent/WO2005060001A1/en
Priority to US10/546,216 priority patent/US7359230B2/en
Publication of JP2005183619A publication Critical patent/JP2005183619A/ja
Publication of JP2005183619A5 publication Critical patent/JP2005183619A5/ja
Withdrawn legal-status Critical Current

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JP2003421309A 2003-12-18 2003-12-18 不揮発メモリ装置 Withdrawn JP2005183619A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003421309A JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置
PCT/JP2004/018522 WO2005060001A1 (en) 2003-12-18 2004-12-06 Nonvolatile memory device
US10/546,216 US7359230B2 (en) 2003-12-18 2004-12-06 Nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003421309A JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置

Publications (2)

Publication Number Publication Date
JP2005183619A JP2005183619A (ja) 2005-07-07
JP2005183619A5 true JP2005183619A5 (cg-RX-API-DMAC7.html) 2007-02-01

Family

ID=34697277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003421309A Withdrawn JP2005183619A (ja) 2003-12-18 2003-12-18 不揮発メモリ装置

Country Status (3)

Country Link
US (1) US7359230B2 (cg-RX-API-DMAC7.html)
JP (1) JP2005183619A (cg-RX-API-DMAC7.html)
WO (1) WO2005060001A1 (cg-RX-API-DMAC7.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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DE102004025676B4 (de) * 2004-05-26 2008-09-04 Qimonda Ag Integrierter Halbleiterspeicher mit organischem Auswahltransistor
DE102004041907B3 (de) * 2004-08-30 2006-03-23 Infineon Technologies Ag Resistive Speicheranordnung, insbesondere CBRAM-Speicher
US8335103B2 (en) * 2004-09-30 2012-12-18 Nxp B.V. Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
KR20140015128A (ko) 2004-10-18 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2006043687A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006043611A1 (en) 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006057417A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7926726B2 (en) * 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US8188461B2 (en) * 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4926597B2 (ja) * 2005-08-12 2012-05-09 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
KR101369864B1 (ko) * 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
US7935957B2 (en) 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
JP5019821B2 (ja) * 2005-08-12 2012-09-05 株式会社半導体エネルギー研究所 半導体装置
US7566899B2 (en) * 2005-12-21 2009-07-28 Palo Alto Research Center Incorporated Organic thin-film transistor backplane with multi-layer contact structures and data lines
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
JP5201853B2 (ja) * 2006-03-10 2013-06-05 株式会社半導体エネルギー研究所 半導体装置
CN102222765B (zh) 2006-03-10 2012-12-12 株式会社半导体能源研究所 存储元件以及半导体器件
JP5230119B2 (ja) * 2006-04-28 2013-07-10 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
JP2008123595A (ja) * 2006-11-10 2008-05-29 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8283724B2 (en) * 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
CN101617399B (zh) 2007-02-27 2011-05-18 富士通半导体股份有限公司 半导体存储器件及其制造、测试方法、封装树脂形成方法
JP5347377B2 (ja) * 2007-08-31 2013-11-20 大日本印刷株式会社 縦型有機トランジスタ、その製造方法及び発光素子
US7851281B2 (en) * 2007-11-28 2010-12-14 Panasonic Corporation Manufacturing method of flexible semiconductor device and flexible semiconductor device
CN103258964B (zh) * 2008-05-16 2016-06-01 株式会社半导体能源研究所 发光元件、电子设备和照明装置
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
JP5476566B2 (ja) * 2009-09-01 2014-04-23 独立行政法人物質・材料研究機構 酸化アルミニウム薄膜を用いたスイッチング素子とこれを有する電子回路
JP5333311B2 (ja) * 2010-03-26 2013-11-06 ソニー株式会社 不揮発性記憶装置
JP5429638B2 (ja) * 2010-06-28 2014-02-26 株式会社リコー 画像形成装置及び画像形成装置の電源制御方法
CN102930898B (zh) * 2012-11-12 2015-07-15 中国电子科技集团公司第五十四研究所 一种构建多端口异步存储模块的方法

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US5070385A (en) * 1989-10-20 1991-12-03 Radiant Technologies Ferroelectric non-volatile variable resistive element
JP3170101B2 (ja) 1993-04-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法
JP3559580B2 (ja) 1993-12-17 2004-09-02 財団法人国際科学振興財団 半導体装置
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP4297579B2 (ja) 1998-12-28 2009-07-15 日立マクセル株式会社 管理システム
US6385407B1 (en) 1998-12-28 2002-05-07 Hitachi Maxell, Ltd. Accommodating enclosure and management system
JP2001189431A (ja) 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
KR20020030272A (ko) 2000-03-28 2002-04-24 롤페스 요하네스 게라투스 알베르투스 집적 회로 및 이를 포함하는 트랜스폰더 및 시큐리티페이퍼 및 집적 회로 내의 메모리 프로그래밍 방법
US6587370B2 (en) 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
US6724651B2 (en) 2001-04-06 2004-04-20 Canon Kabushiki Kaisha Nonvolatile solid-state memory and method of driving the same
JP2003086775A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP4124635B2 (ja) * 2002-12-05 2008-07-23 シャープ株式会社 半導体記憶装置及びメモリセルアレイの消去方法

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