JP2005167275A5 - - Google Patents
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- JP2005167275A5 JP2005167275A5 JP2005015790A JP2005015790A JP2005167275A5 JP 2005167275 A5 JP2005167275 A5 JP 2005167275A5 JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005167275 A5 JP2005167275 A5 JP 2005167275A5
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- JP
- Japan
- Prior art keywords
- underlayer
- less
- substrate
- conductive layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 51
- 150000004767 nitrides Chemical class 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 19
- 229910052733 gallium Inorganic materials 0.000 claims 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- 229910052738 indium Inorganic materials 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 230000005669 field effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005015790A JP2005167275A (ja) | 2000-12-07 | 2005-01-24 | 半導体素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000373039 | 2000-12-07 | ||
| JP2001153693 | 2001-05-23 | ||
| JP2005015790A JP2005167275A (ja) | 2000-12-07 | 2005-01-24 | 半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001267299A Division JP3836697B2 (ja) | 2000-12-07 | 2001-09-04 | 半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005167275A JP2005167275A (ja) | 2005-06-23 |
| JP2005167275A5 true JP2005167275A5 (cg-RX-API-DMAC7.html) | 2007-03-22 |
Family
ID=34743337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005015790A Pending JP2005167275A (ja) | 2000-12-07 | 2005-01-24 | 半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005167275A (cg-RX-API-DMAC7.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| CN102280604B (zh) | 2005-03-17 | 2014-11-12 | 日本电气株式会社 | 覆膜电气设备及其制造方法 |
| US7641735B2 (en) | 2005-12-02 | 2010-01-05 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| EP1978550A4 (en) | 2005-12-28 | 2009-07-22 | Nec Corp | FIELD EFFECT TRANSISTOR AND MULTILAYER EPITAXIAL FILM FOR USE IN THE MANUFACTURE OF A FIELD EFFECT TRANSISTOR |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| JP2007273843A (ja) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | 成膜方法、半導体層、及び半導体素子 |
| JP2008053703A (ja) * | 2006-07-28 | 2008-03-06 | Kanagawa Acad Of Sci & Technol | ＡｌＮ層およびＡｌＧａＮ層並びにそれらの製造方法 |
| CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| JP2008205221A (ja) * | 2007-02-20 | 2008-09-04 | Furukawa Electric Co Ltd:The | 半導体素子 |
| JP4888537B2 (ja) | 2009-08-28 | 2012-02-29 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス |
| EP2588651B1 (en) | 2010-06-30 | 2020-01-08 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| JP5416754B2 (ja) * | 2011-11-15 | 2014-02-12 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体基板およびその製造方法 |
| JP2012064977A (ja) * | 2011-12-15 | 2012-03-29 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス |
| CN108511567A (zh) | 2013-03-15 | 2018-09-07 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
| US10636663B2 (en) | 2017-03-29 | 2020-04-28 | Toyoda Gosei Co., Ltd. | Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region |
| WO2019015754A1 (en) | 2017-07-20 | 2019-01-24 | Swegan Ab | ELECTRON HIGH MOBILITY TRANSISTOR HETERROSTRUCTURE AND METHOD FOR PRODUCING THE SAME |
-
2005
- 2005-01-24 JP JP2005015790A patent/JP2005167275A/ja active Pending
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