JP2005165329A - 不可視電極を備える透明基板およびこれを組み込んだデバイス - Google Patents
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Abstract
【解決手段】電極(7)と接触区域(15)は、透明導電性酸化物(TCO)のフィルム内で構造化され、中間フィルム(3)で被覆される透明支持体(1)上に堆積され、UV照射によって得られるナノ・フィッシャ(11)によって形成され、TCOフィルムを通過する誘電スペース(9)によって分離される。保護フィルム(13)は、電極(7)および誘電スペース(9)を被覆する。
【選択図】図6
Description
支持体と中間層上に堆積されてもよいTCOフィルムとが形成された基板を、ガス流体供給とポンプ出口を有する密封され、囲まれたスペース内に配置するステップと、
UV照射源と基板の間に、UV照射に対して透明であり、非導電スペースの所望の輪郭を生成する窓を含むマスクを挿入するステップと、
基板を形成するのに使用される材料、その厚さ、射出源の選択の関数として、物体を取り除くことなくTCOフィルム内でナノ・フィッシャを起こすように照射の特徴を調節するステップとを含む。
Claims (17)
- 透明な導電性フィルム(5)が堆積された透明支持体(1)を含む不可視電極を備える透明基板であって、電極(7)と接触区域(15)が非導電スペース(9)によって分離された輪郭として構造化され、前記非導電スペース(9)の部位に配置された導電性フィルム(5)は、裸眼で感知できるように光線の経路を変更することなく、隣接する電極間の導電性を遮断するナノ・フィッシャ(11)を含むことを特徴とする基板。
- 透明な導電性フィルム(5)が、酸化スズ・インジウム(ITO)、Sbでドープ処理されたIn2O3およびSnO2を含む群から選択された透明な導電性酸化物(TCO)であることを特徴とする請求項1に記載の基板。
- 透明な導電性フィルム(5)が、ポリアセチレンおよびポリアニリンから選択された共役二重結合を有するドープ処理された導電性ポリマーであることを特徴とする請求項1に記載の基板。
- 透明な硬い非導電性材料またはハードコーティングで作られた中間層(3)が、支持体(1)と導電性フィルム(5)の間に挿入されることを特徴とする請求項1に記載の基板。
- 中間層(3)が、SiO2を組み込み、少なくとも20μmに等しい厚さを有する樹脂から作られていることを特徴とする請求項4に記載の基板。
- ナノ・フィッシャ(11)の大部分が導電性フィルム全体を通過することを特徴とする請求項1に記載の基板。
- 導電性フィルム(5)が、50から100nmの間、好ましくは65から75nmの間からなる厚さを有するITOフィルムであることを特徴とする請求項2に記載の基板。
- 支持体(1)が、ポリメタクリル酸メチル(PMMA)とポリカーボネート(PC)から選択された材料から作られていることを特徴とする請求項1に記載の基板。
- 電極(7)と非導電スペース(9)はさらに、反射防止性を有する保護フィルム(13)で被覆されていることを特徴とする前記請求項のいずれかに記載の基板。
- 保護フィルム(13)は、電極(7)の接触区域(15)を覆っていないことを特徴とする請求項9に記載の基板。
- 一体化された電子装置用のタッチ型の制御画面を形成することを特徴とする請求項1に記載の基板。
- 電子装置用の液晶ディスプレイセルまたは光電池用の少なくとも1つの閉じた板を形成していることを特徴とする請求項1に記載の基板。
- 透明な導電性フィルム(5)が堆積された透明な支持体(1)を含む不可視電極を備える透明基板を製造する方法であって、電極(7)が照射源(14)によるUV照射によって非導電スペース(9)によって分離された輪郭として構造化され、
支持体(1)と、透明な硬い非導電性材料から作られた中間層(3)上に堆積されてもよい導電性フィルム(5)とが形成された基板を、ガス流体供給入口(4)とポンプ出口(6)を有する密封され、囲まれたスペース(2)内に配置し、
UV照射源(14)と基板の間に、UV照射に対して透明であり、誘電非導電体(9)に対応する窓(12)を含むマスク(10)を挿入し、
いかなる物質を取り除くことなく、基板と照射源(14)に使用される材料の選択の関数として、ナノ・フィッシャを照射区域内の導電性フィルム(5)内に作り出せるようにUV照射特性を調節することを特徴とする方法。 - 透明基板の所望の有用な表面に対応する別のマスクに使用されたマスク(10)を交換し、電極(7)の接触区域(15)を見えるように、同じUV源(14)で前駆ガスから反射防止性である導電性フィルム(13)を堆積させることをさらに含むことを特徴とする請求項13に記載の方法。
- 透明な導電性フィルム(5)は、酸化スズ、インジウム(ITO)、Sbでドープ処理されたIn2O3およびSnO2からなる群から選択された透明な導電性酸化物(TOC)であることを特徴とする請求項13に記載の方法。
- 透明な導電性フィルム(5)は、ポリアセチレンおよびポリアニリンから選択されたドープ処理された導電性ポリマーであることを特徴とする請求項13に記載の方法。
- 源(14)は、XeFの長いパルス・レーザとKrFの短いパルス・レーザから選択されるエキシマ・レーザによって形成されることを特徴とする請求項13に記載の方法。
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EP03027566.3 | 2003-12-01 | ||
EP03027566A EP1538514B1 (fr) | 2003-12-01 | 2003-12-01 | Substrat transparent à électrodes invisibles et dispositifs l'incorporant |
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US (1) | US7843061B2 (ja) |
EP (1) | EP1538514B1 (ja) |
JP (1) | JP4836442B2 (ja) |
KR (1) | KR101093301B1 (ja) |
CN (1) | CN100472301C (ja) |
AT (1) | ATE403184T1 (ja) |
DE (1) | DE60322549D1 (ja) |
ES (1) | ES2311666T3 (ja) |
HK (1) | HK1077887A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
US7342705B2 (en) | 2004-02-03 | 2008-03-11 | Idc, Llc | Spatial light modulator with integrated optical compensation structure |
US7208401B2 (en) * | 2004-03-12 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Method for forming a thin film |
WO2008045311A2 (en) | 2006-10-06 | 2008-04-17 | Qualcomm Mems Technologies, Inc. | Illumination device with built-in light coupler |
US8107155B2 (en) | 2006-10-06 | 2012-01-31 | Qualcomm Mems Technologies, Inc. | System and method for reducing visual artifacts in displays |
EP1943551A2 (en) | 2006-10-06 | 2008-07-16 | Qualcomm Mems Technologies, Inc. | Light guide |
EP2366945A1 (en) | 2006-10-06 | 2011-09-21 | Qualcomm Mems Technologies, Inc. | Optical loss layer integrated in an illumination apparatus of a display |
EP2109116B1 (en) * | 2007-01-16 | 2012-04-25 | Teijin Limited | Transparent conductive multilayer body and touch panel made of the same |
CN101330796B (zh) * | 2007-06-22 | 2011-08-17 | 宝创科技股份有限公司 | 导通结构与其应用 |
JP5380723B2 (ja) * | 2007-08-07 | 2014-01-08 | Nltテクノロジー株式会社 | 面表示装置及び電子機器 |
US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
US8118468B2 (en) | 2008-05-16 | 2012-02-21 | Qualcomm Mems Technologies, Inc. | Illumination apparatus and methods |
US9274553B2 (en) | 2009-10-30 | 2016-03-01 | Synaptics Incorporated | Fingerprint sensor and integratable electronic display |
KR101821429B1 (ko) | 2009-12-29 | 2018-01-23 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 금속화된 광 방향 전환 특징부를 갖는 조명 장치 |
CN102236457A (zh) * | 2010-04-28 | 2011-11-09 | 友发科技股份有限公司 | 触控元件 |
KR101489161B1 (ko) * | 2010-07-30 | 2015-02-06 | 주식회사 잉크테크 | 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막 |
TWI490789B (zh) * | 2011-05-03 | 2015-07-01 | Synaptics Inc | 指紋感測器及整合指紋感測器的電子顯示器 |
WO2015083874A1 (ko) * | 2013-12-03 | 2015-06-11 | 재단법인 멀티스케일 에너지시스템 연구단 | 크랙 함유 전도성 박막을 구비하는 고감도 센서 및 그의 제조방법 |
CN104699310A (zh) * | 2015-03-31 | 2015-06-10 | 合肥京东方光电科技有限公司 | 触摸屏及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09260695A (ja) * | 1996-03-19 | 1997-10-03 | Canon Inc | 光起電力素子アレーの製造方法 |
JPH10214145A (ja) * | 1997-01-29 | 1998-08-11 | Alps Electric Co Ltd | 座標入力装置、及びその座標入力装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH607872B (fr) | 1976-11-04 | 1900-01-01 | Centre Electron Horloger | Montre munie d'un dispositif de commande manuelle. |
DE3236099A1 (de) * | 1982-09-29 | 1984-03-29 | Siemens Ag | Tastaturfeld fuer ein rechner-graphiksystem |
JPH0228626A (ja) * | 1988-04-07 | 1990-01-30 | Toyoda Gosei Co Ltd | エレクトロクロミック素子 |
CH686206A5 (it) * | 1992-03-26 | 1996-01-31 | Asulab Sa | Cellule photoelectrochimique regeneratrice transparente. |
JP3752010B2 (ja) * | 1995-07-04 | 2006-03-08 | 新日本石油株式会社 | 調光素子 |
JP4494628B2 (ja) | 1997-12-19 | 2010-06-30 | アスラブ・エス アー | 重ね合わせた2つのディスプレー装置を有するディスプレー・アセンブリ |
DE19914304A1 (de) * | 1999-03-29 | 2000-10-05 | Bayer Ag | Elektrochrome Kontrastplatte |
ES2327708T3 (es) | 2000-11-17 | 2009-11-03 | Asulab S.A. | Reloj electronico que comprende pulsadores capacitivos sobre su cristal. |
EP1457865B1 (fr) | 2003-03-12 | 2017-11-08 | Asulab S.A. | Substrat à électrodes transparent et son procédé de fabrication |
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2003
- 2003-12-01 EP EP03027566A patent/EP1538514B1/fr not_active Expired - Lifetime
- 2003-12-01 AT AT03027566T patent/ATE403184T1/de active
- 2003-12-01 ES ES03027566T patent/ES2311666T3/es not_active Expired - Lifetime
- 2003-12-01 DE DE60322549T patent/DE60322549D1/de not_active Expired - Lifetime
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2004
- 2004-11-24 KR KR1020040096668A patent/KR101093301B1/ko not_active IP Right Cessation
- 2004-11-29 CN CNB200410095531XA patent/CN100472301C/zh not_active Expired - Fee Related
- 2004-11-30 US US10/998,800 patent/US7843061B2/en active Active
- 2004-12-01 JP JP2004348546A patent/JP4836442B2/ja not_active Expired - Fee Related
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09260695A (ja) * | 1996-03-19 | 1997-10-03 | Canon Inc | 光起電力素子アレーの製造方法 |
JPH10214145A (ja) * | 1997-01-29 | 1998-08-11 | Alps Electric Co Ltd | 座標入力装置、及びその座標入力装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101093301B1 (ko) | 2011-12-14 |
CN100472301C (zh) | 2009-03-25 |
DE60322549D1 (de) | 2008-09-11 |
EP1538514B1 (fr) | 2008-07-30 |
ES2311666T3 (es) | 2009-02-16 |
EP1538514A1 (fr) | 2005-06-08 |
US7843061B2 (en) | 2010-11-30 |
KR20050052992A (ko) | 2005-06-07 |
US20050116343A1 (en) | 2005-06-02 |
HK1077887A1 (en) | 2006-02-24 |
JP4836442B2 (ja) | 2011-12-14 |
ATE403184T1 (de) | 2008-08-15 |
CN1624609A (zh) | 2005-06-08 |
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