JP2005122832A - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

Info

Publication number
JP2005122832A
JP2005122832A JP2003357324A JP2003357324A JP2005122832A JP 2005122832 A JP2005122832 A JP 2005122832A JP 2003357324 A JP2003357324 A JP 2003357324A JP 2003357324 A JP2003357324 A JP 2003357324A JP 2005122832 A JP2005122832 A JP 2005122832A
Authority
JP
Japan
Prior art keywords
power supply
semiconductor integrated
integrated circuit
supply voltage
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003357324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005122832A5 (enExample
Inventor
Toshiharu Igai
利春 猪飼
Takenori Ito
武典 伊藤
響 ▲高▼野
Hibiki Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Renesas Technology Corp
Renesas Northern Japan Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Renesas Northern Japan Semiconductor Inc filed Critical Renesas Technology Corp
Priority to JP2003357324A priority Critical patent/JP2005122832A/ja
Priority to US10/960,996 priority patent/US7154786B2/en
Publication of JP2005122832A publication Critical patent/JP2005122832A/ja
Publication of JP2005122832A5 publication Critical patent/JP2005122832A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2003357324A 2003-10-17 2003-10-17 半導体集積回路装置 Pending JP2005122832A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003357324A JP2005122832A (ja) 2003-10-17 2003-10-17 半導体集積回路装置
US10/960,996 US7154786B2 (en) 2003-10-17 2004-10-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003357324A JP2005122832A (ja) 2003-10-17 2003-10-17 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2005122832A true JP2005122832A (ja) 2005-05-12
JP2005122832A5 JP2005122832A5 (enExample) 2006-11-02

Family

ID=34509827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003357324A Pending JP2005122832A (ja) 2003-10-17 2003-10-17 半導体集積回路装置

Country Status (2)

Country Link
US (1) US7154786B2 (enExample)
JP (1) JP2005122832A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070211A (ja) * 2007-09-14 2009-04-02 Panasonic Corp 電圧発生回路
JP2010272156A (ja) * 2009-05-20 2010-12-02 Renesas Electronics Corp 半導体装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4668656B2 (ja) * 2005-03-24 2011-04-13 日立オートモティブシステムズ株式会社 プログラムの書き換えシステム及びプログラムの書き換え方法
EP1884954B1 (en) 2006-07-27 2009-02-04 STMicroelectronics Asia Pacific Pte Ltd. Supply voltage distribution system with reduced resistance for semiconductor devices
KR100803361B1 (ko) * 2006-09-14 2008-02-14 주식회사 하이닉스반도체 Pll 회로의 루프 필터 및 그 제어 방법
KR100803360B1 (ko) * 2006-09-14 2008-02-14 주식회사 하이닉스반도체 Pll 회로 및 그 제어 방법
US7876637B2 (en) * 2006-11-07 2011-01-25 Renesas Electronics Corporation Semiconductor device and memory
US7728688B2 (en) * 2006-12-07 2010-06-01 Intel Corporation Power supply circuit for a phase-locked loop
US7724078B2 (en) * 2007-03-22 2010-05-25 Intel Corporation Adjusting PLL/analog supply to track CPU core supply through a voltage regulator
US8520441B2 (en) * 2010-11-16 2013-08-27 Sandisk Technologies Inc. Word line kicking when sensing non-volatile storage
EP3318015B1 (en) 2015-06-30 2019-10-30 British Telecommunications public limited company Energy management in a network
EP3318009B1 (en) 2015-06-30 2019-11-06 British Telecommunications public limited company Model management in a dynamic qos environment
US10728157B2 (en) 2015-06-30 2020-07-28 British Telecommunications Public Limited Company Local and demand driven QoS models
WO2017001626A1 (en) 2015-06-30 2017-01-05 British Telecommunications Public Limited Company Quality of service management in a network
WO2017001630A1 (en) 2015-06-30 2017-01-05 British Telecommunications Public Limited Company Model management in a dynamic qos environment
WO2017001634A1 (en) 2015-06-30 2017-01-05 British Telecommunications Public Limited Company Negotiating quality of service for data flows
US11616728B2 (en) 2015-06-30 2023-03-28 British Telecommunications Public Limited Company Modifying quality of service treatment for data flows
US10020752B1 (en) 2017-09-26 2018-07-10 Vlt, Inc. Adaptive control of resonant power converters

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046809A1 (en) 1999-02-01 2000-08-10 Hitachi, Ltd. Semiconductor integrated circuit and nonvolatile memory element
JP3838482B2 (ja) 2000-10-30 2006-10-25 株式会社ルネサステクノロジ 出力回路および入力回路
US6977850B2 (en) * 2001-12-27 2005-12-20 Kabushiki Kaisha Toshiba Semiconductor device having switch circuit to supply voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009070211A (ja) * 2007-09-14 2009-04-02 Panasonic Corp 電圧発生回路
JP2010272156A (ja) * 2009-05-20 2010-12-02 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
US20050083762A1 (en) 2005-04-21
US7154786B2 (en) 2006-12-26

Similar Documents

Publication Publication Date Title
JP2005122832A (ja) 半導体集積回路装置
JP4488800B2 (ja) 半導体集積回路装置
CN100401427C (zh) 非易失性半导体存储器
US8379452B2 (en) Nonvolatile semiconductor memory device
US10403374B2 (en) Reduction of output voltage ripple in booster circuit
US20170076800A1 (en) Voltage generating circuit and semiconductor memory device
CN103310845A (zh) 半导体器件
JP2018061401A (ja) 電源回路及び半導体記憶装置
JP2012234591A (ja) 不揮発性半導体記憶装置
US7149132B2 (en) Biasing circuit for use in a non-volatile memory device
JP4359319B2 (ja) 電源回路
JP4721256B2 (ja) 半導体記憶装置
JP2009009680A (ja) 半導体装置
KR100591773B1 (ko) 불휘발성 반도체 메모리 장치 및 그것을 위한 전압 발생회로
US8264274B2 (en) Non-volatile memory device and charge pump circuit for the same
KR100265873B1 (ko) 반도체 집적 회로
JP4850661B2 (ja) 半導体記憶装置
US7667521B2 (en) Voltage switch circuit of semiconductor device
US20070086249A1 (en) Memory device having internal voltage supply providing improved power efficiency during active mode of memory operation
JP2005267712A (ja) 不揮発性半導体記憶装置
JP3936419B2 (ja) アレー回路制御用の内部電圧を用いた昇圧電源電圧発生装置
JP2006065928A (ja) 不揮発性半導体記憶装置および半導体集積回路装置
US8379464B2 (en) Semiconductor integrated circuit device
JP5735219B2 (ja) 半導体装置
JP2007323684A (ja) 半導体集積回路

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060915

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060915

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090217

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090901