JP2005108834A5 - - Google Patents
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- Publication number
- JP2005108834A5 JP2005108834A5 JP2004272681A JP2004272681A JP2005108834A5 JP 2005108834 A5 JP2005108834 A5 JP 2005108834A5 JP 2004272681 A JP2004272681 A JP 2004272681A JP 2004272681 A JP2004272681 A JP 2004272681A JP 2005108834 A5 JP2005108834 A5 JP 2005108834A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- chamber
- irradiation
- euv
- euv radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 description 98
- 230000005540 biological transmission Effects 0.000 description 28
- 239000000463 material Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 229910052724 xenon Inorganic materials 0.000 description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0311280A FR2860385B1 (fr) | 2003-09-26 | 2003-09-26 | Source euv |
| FR0311280 | 2003-09-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005108834A JP2005108834A (ja) | 2005-04-21 |
| JP2005108834A5 true JP2005108834A5 (https=) | 2011-02-24 |
| JP4690686B2 JP4690686B2 (ja) | 2011-06-01 |
Family
ID=34307180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004272681A Expired - Fee Related JP4690686B2 (ja) | 2003-09-26 | 2004-09-21 | Ｅｕｖ源 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7095038B2 (https=) |
| EP (1) | EP1528846B1 (https=) |
| JP (1) | JP4690686B2 (https=) |
| AT (1) | ATE453309T1 (https=) |
| DE (1) | DE602004024754D1 (https=) |
| FR (1) | FR2860385B1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7439530B2 (en) | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
| US7034320B2 (en) * | 2003-03-20 | 2006-04-25 | Intel Corporation | Dual hemispherical collectors |
| JP2005190904A (ja) * | 2003-12-26 | 2005-07-14 | Ushio Inc | 極端紫外光源 |
| US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
| EP2020165B1 (en) | 2006-05-16 | 2010-11-24 | Philips Intellectual Property & Standards GmbH | A method of increasing the conversion efficiency of an euv and/or soft x-ray lamp and a corresponding apparatus |
| US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
| CN101849212A (zh) * | 2007-11-08 | 2010-09-29 | Asml荷兰有限公司 | 辐射系统和方法以及光谱纯度滤光片 |
| EP2083328B1 (en) * | 2008-01-28 | 2013-06-19 | Media Lario s.r.l. | Grazing incidence collector for laser produced plasma sources |
| EP2182412A1 (en) * | 2008-11-04 | 2010-05-05 | ASML Netherlands B.V. | Radiation source and lithographic apparatus |
| US8330131B2 (en) * | 2010-01-11 | 2012-12-11 | Media Lario, S.R.L. | Source-collector module with GIC mirror and LPP EUV light source |
| WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
| US20150097107A1 (en) * | 2012-03-20 | 2015-04-09 | Fst Inc. | Apparatus for generating extreme ultraviolet light using plasma |
| WO2013189827A2 (en) | 2012-06-22 | 2013-12-27 | Asml Netherlands B.V. | Radiation source and lithographic apparatus. |
| US10880979B2 (en) | 2015-11-10 | 2020-12-29 | Kla Corporation | Droplet generation for a laser produced plasma light source |
| US10021773B2 (en) | 2015-11-16 | 2018-07-10 | Kla-Tencor Corporation | Laser produced plasma light source having a target material coated on a cylindrically-symmetric element |
| US9918375B2 (en) * | 2015-11-16 | 2018-03-13 | Kla-Tencor Corporation | Plasma based light source having a target material coated on a cylindrically-symmetric element |
| KR102024760B1 (ko) * | 2018-01-18 | 2019-09-25 | 한국원자력연구원 | 빔집속장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137543A (ja) * | 1987-11-24 | 1989-05-30 | Fujitsu Ltd | レーザ励起ｘ線発生装置 |
| JPH0837096A (ja) * | 1994-07-26 | 1996-02-06 | Nikon Corp | Ｘ線発生装置 |
| JPH10221499A (ja) * | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
| US6541786B1 (en) * | 1997-05-12 | 2003-04-01 | Cymer, Inc. | Plasma pinch high energy with debris collector |
| JP2000089000A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | Ｘ線発生装置 |
| DE19962160C2 (de) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung |
| US6304630B1 (en) * | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
| JP4351413B2 (ja) * | 2002-03-05 | 2009-10-28 | 望月 孝晏 | レーザプラズマｘ線発生装置 |
| DE10251435B3 (de) * | 2002-10-30 | 2004-05-27 | Xtreme Technologies Gmbh | Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung |
-
2003
- 2003-09-26 FR FR0311280A patent/FR2860385B1/fr not_active Expired - Fee Related
-
2004
- 2004-09-20 DE DE602004024754T patent/DE602004024754D1/de not_active Expired - Lifetime
- 2004-09-20 AT AT04292256T patent/ATE453309T1/de not_active IP Right Cessation
- 2004-09-20 EP EP04292256A patent/EP1528846B1/fr not_active Expired - Lifetime
- 2004-09-21 JP JP2004272681A patent/JP4690686B2/ja not_active Expired - Fee Related
- 2004-09-22 US US10/946,109 patent/US7095038B2/en not_active Expired - Fee Related
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