JP2005101520A - 凹凸パターン化を伴う半導体層 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
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Abstract
【解決手段】この方法は基板の表面上に連続的な第1の層を形成する工程、および第1の層にスタンプの表面を押し当てて表面上に交差しない平滑領域のパターンを作り出す工程を含む。第1の層の表面の凹凸領域が第1の層の表面の各々の平滑領域と横方向で境界を接し、かつそれを横方向で取り囲む。第1の層の表面の平滑と凹凸の領域のパターンはスタンプの表面の平滑と凹凸の領域のパターンをコピーしている。本方法はまた、パターン化された第1の層の上に連続的な第2の層を形成する工程も含む。第1の層は誘電体層と有機半導体層のうちの一方であり、かつ第2の層は誘電体層と有機半導体層のうちの他方である。
【選択図】図1
Description
図および文中で、類似した参照番号は類似した機能または特性を備えた特徴を示している。
いくつかの実施形態では、有機半導体層22は多結晶であり、凹凸部分28で平滑部分24、26よりも少なくとも約10倍細かい平均粒径を有する。
Claims (10)
- 平板状の基板の表面上で集積回路を加工するための方法であって、
基板の表面上に、誘電体層と有機半導体層のうちの一方である連続的な第1の層を形成する工程と、
第1の層にスタンプの表面を押し当てて第1の層の表面上に交差しない平滑領域のパターンを作り出す工程であって、各々の平滑領域が横方向で境界を接する第1の層の表面の凹凸領域によって横方向で取り囲まれ、第1の層の表面の平滑と凹凸の領域のパターンがスタンプの表面の平滑と凹凸の領域のパターンをコピーしている工程と、
凹凸パターン化された第1の層の上に、誘電体層と有機半導体層のうちの他方である連続的な第2の層を形成する工程とを含む方法。 - ゲート電極のパターンを形成する工程をさらに含み、
第1の層の表面の各々の平滑領域が、有機半導体を含む層の関連横方向部分を規定し、関連横方向部分が関連平滑領域に物理的に面し、横方向部分の各々が有機の電界効果型トランジスタの能動性チャネルを形成し、ゲート電極のうちの1つが各々の能動性チャネルの導電度を制御するように構成される請求項1に記載の方法。 - 押し当て作用時に第1の層を軟化させるために熱を供給する工程をさらに含む、請求項1に記載の方法。
- 第1の層の材料を溶解することができる溶剤でスタンプをインク付けする工程をさらに含み、
押し当て作用が第1の層にインク付けされたスタンプの表面を押し当てる工程を含む、請求項1に記載の方法。 - 第1の層が誘電体層であり、かつ第2の層が半導体層である、請求項1に記載の方法。
- 平板状の表面を有する基板と、
表面が複数の交差しない平滑領域を有する連続的な第1の層であって、各々の平滑領域が、横方向で境界を接する第1の層の同じ表面の凹凸領域によって横方向で取り囲まれた第1の層と、
平滑と凹凸の領域を有する第1の層の同じ表面上に位置する連続的な第2の層とを含み、
層のうちの一方が誘電体であり、かつ層のうちの他方が有機半導体であり、
有機半導体の層の第1の複数部分が有機半導体の層の第2の複数部分よりも層の方向に沿って実質的に高い導電度を有し、有機半導体の層の第1の複数部分が平滑領域に面して位置し、有機半導体の層の第2の複数部分が凹凸領域に面して位置する装置。 - 三つ揃いの関連したゲート、ソース、およびドレイン電極をさらに含み、
電極の各三つ揃いが半導体層の第1の複数部分のうちの1つと関連し、各々の関連の第1部分が関連のソースとドレイン電極のための能動性半導体チャネルであり、各ゲート電極が関連の第1部分の導電度を制御するように構成される、請求項6に記載の装置。 - 第1の層が誘電体である、請求項7に記載の装置。
- 有機半導体がペンタセンまたはテトラセンを含む、請求項6に記載の装置。
- 有機半導体の層が多結晶であり、かつ第2の複数部分で第1の複数部分よりも少なくとも10倍細かい平均粒径を有する、請求項6に記載の装置。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/669,780 US6969634B2 (en) | 2003-09-24 | 2003-09-24 | Semiconductor layers with roughness patterning |
US10/669780 | 2003-09-24 |
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JP2005101520A true JP2005101520A (ja) | 2005-04-14 |
JP5051968B2 JP5051968B2 (ja) | 2012-10-17 |
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JP (1) | JP5051968B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006179855A (ja) * | 2004-12-23 | 2006-07-06 | Samsung Sdi Co Ltd | 薄膜トランジスタ、それを備えた平板表示装置、前記薄膜トランジスタの製造方法、及び前記平板表示装置の製造方法 |
WO2007026781A1 (ja) * | 2005-08-31 | 2007-03-08 | Sumitomo Chemical Company, Limited | トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置 |
WO2007026778A1 (ja) * | 2005-08-31 | 2007-03-08 | Sumitomo Chemical Company, Limited | トランジスタ、有機半導体素子及びこれらの製造方法 |
JP2007096288A (ja) * | 2005-08-31 | 2007-04-12 | Sumitomo Chemical Co Ltd | トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置 |
JP2007096289A (ja) * | 2005-08-31 | 2007-04-12 | Sumitomo Chemical Co Ltd | トランジスタ、有機半導体素子及びこれらの製造方法 |
JP2010040392A (ja) * | 2008-08-06 | 2010-02-18 | Fuji Xerox Co Ltd | パターニング方法、有機電気素子、有機電界発光素子、及び有機半導体トランジスタ |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7951687B2 (en) * | 2003-04-02 | 2011-05-31 | Polymer Vision Limited | Method of manufacturing a flexible electronic device and flexible device |
JP4194436B2 (ja) * | 2003-07-14 | 2008-12-10 | キヤノン株式会社 | 電界効果型有機トランジスタ |
US7372070B2 (en) * | 2004-05-12 | 2008-05-13 | Matsushita Electric Industrial Co., Ltd. | Organic field effect transistor and method of manufacturing the same |
JP2005353725A (ja) * | 2004-06-09 | 2005-12-22 | Shinko Electric Ind Co Ltd | 基板上への能動素子の形成方法および基板 |
KR100669762B1 (ko) * | 2004-11-15 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
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JP2008103653A (ja) * | 2006-09-22 | 2008-05-01 | Tohoku Univ | 半導体装置及び半導体装置の製造方法 |
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KR101873476B1 (ko) | 2011-04-11 | 2018-07-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR20130057072A (ko) * | 2011-11-23 | 2013-05-31 | 한국전자통신연구원 | 유기 박막층, 유기 박막층의 형성 방법 및 유기 박막 트랜지스터 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003508924A (ja) * | 1999-08-31 | 2003-03-04 | イー−インク コーポレイション | パターニングされた半導体膜を形成する方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3877052A (en) * | 1973-12-26 | 1975-04-08 | Bell Telephone Labor Inc | Light-emitting semiconductor apparatus for optical fibers |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
TW293172B (ja) * | 1994-12-09 | 1996-12-11 | At & T Corp | |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US6498114B1 (en) * | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
ATE450895T1 (de) * | 1999-07-21 | 2009-12-15 | E Ink Corp | Bevorzugte methode, elektrische leiterbahnen für die kontrolle eines elektronischen displays herzustellen |
WO2001060589A1 (en) | 2000-02-16 | 2001-08-23 | Omlidon Technologies Llc | Method for microstructuring polymer-supported materials |
US6403397B1 (en) | 2000-06-28 | 2002-06-11 | Agere Systems Guardian Corp. | Process for fabricating organic semiconductor device involving selective patterning |
US7018575B2 (en) * | 2001-09-28 | 2006-03-28 | Hrl Laboratories, Llc | Method for assembly of complementary-shaped receptacle site and device microstructures |
US6740900B2 (en) * | 2002-02-27 | 2004-05-25 | Konica Corporation | Organic thin-film transistor and manufacturing method for the same |
US6768132B2 (en) * | 2002-03-07 | 2004-07-27 | 3M Innovative Properties Company | Surface modified organic thin film transistors |
US6596569B1 (en) | 2002-03-15 | 2003-07-22 | Lucent Technologies Inc. | Thin film transistors |
US6869821B2 (en) * | 2002-12-30 | 2005-03-22 | Xerox Corporation | Method for producing organic electronic devices on deposited dielectric materials |
US7166689B2 (en) * | 2003-02-13 | 2007-01-23 | Ricoh Company, Ltd. | Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor |
-
2003
- 2003-09-24 US US10/669,780 patent/US6969634B2/en not_active Expired - Lifetime
-
2004
- 2004-05-24 JP JP2004153165A patent/JP5051968B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003508924A (ja) * | 1999-08-31 | 2003-03-04 | イー−インク コーポレイション | パターニングされた半導体膜を形成する方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006179855A (ja) * | 2004-12-23 | 2006-07-06 | Samsung Sdi Co Ltd | 薄膜トランジスタ、それを備えた平板表示装置、前記薄膜トランジスタの製造方法、及び前記平板表示装置の製造方法 |
JP4504877B2 (ja) * | 2004-12-23 | 2010-07-14 | 三星モバイルディスプレイ株式會社 | 薄膜トランジスタ、それを備えた平板表示装置、前記薄膜トランジスタの製造方法、及び前記平板表示装置の製造方法 |
GB2445487A (en) * | 2005-08-31 | 2008-07-09 | Sumitomo Chemical Co | Transistor, method for manufacturing same, and semiconductor device comprising such transistor |
JP2007096288A (ja) * | 2005-08-31 | 2007-04-12 | Sumitomo Chemical Co Ltd | トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置 |
JP2007096289A (ja) * | 2005-08-31 | 2007-04-12 | Sumitomo Chemical Co Ltd | トランジスタ、有機半導体素子及びこれらの製造方法 |
GB2444439A (en) * | 2005-08-31 | 2008-06-04 | Sumitomo Chemical Co | Transistor, organic semiconductor device, amd method for manufacture of the transistor or device |
WO2007026778A1 (ja) * | 2005-08-31 | 2007-03-08 | Sumitomo Chemical Company, Limited | トランジスタ、有機半導体素子及びこれらの製造方法 |
WO2007026781A1 (ja) * | 2005-08-31 | 2007-03-08 | Sumitomo Chemical Company, Limited | トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置 |
US7977149B2 (en) | 2005-08-31 | 2011-07-12 | Sumitomo Chemical Company, Limited | Transistor, organic semiconductor device, and method for manufacture of the transistor or device |
GB2445487B (en) * | 2005-08-31 | 2011-11-02 | Sumitomo Chemical Co | Transistor, method for manufacturing same, and semiconductor device comprising such transistor |
GB2444439B (en) * | 2005-08-31 | 2012-04-25 | Sumitomo Chemical Co | Method for manufacture of a transistor and organic semiconductor device |
US8247264B2 (en) | 2005-08-31 | 2012-08-21 | Sumitomo Chemical Company, Limited | Transistor, method for manufacturing same, and semiconductor device comprising such transistor |
TWI447980B (zh) * | 2005-08-31 | 2014-08-01 | Sumitomo Chemical Co | A transistor, an organic semiconductor element, and the like |
JP2010040392A (ja) * | 2008-08-06 | 2010-02-18 | Fuji Xerox Co Ltd | パターニング方法、有機電気素子、有機電界発光素子、及び有機半導体トランジスタ |
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JP5051968B2 (ja) | 2012-10-17 |
US20050064623A1 (en) | 2005-03-24 |
US6969634B2 (en) | 2005-11-29 |
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