JP2005093712A - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

Info

Publication number
JP2005093712A
JP2005093712A JP2003324884A JP2003324884A JP2005093712A JP 2005093712 A JP2005093712 A JP 2005093712A JP 2003324884 A JP2003324884 A JP 2003324884A JP 2003324884 A JP2003324884 A JP 2003324884A JP 2005093712 A JP2005093712 A JP 2005093712A
Authority
JP
Japan
Prior art keywords
light
phosphor
light emitting
led chip
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003324884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005093712A5 (enExample
Inventor
Yasumasa Morita
康正 森田
Isato Oba
勇人 大場
Shigeo Fujisawa
茂夫 藤澤
Minoru Tanaka
稔 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2003324884A priority Critical patent/JP2005093712A/ja
Priority to CNA2004100465931A priority patent/CN1599087A/zh
Priority to US10/901,991 priority patent/US20050057144A1/en
Publication of JP2005093712A publication Critical patent/JP2005093712A/ja
Publication of JP2005093712A5 publication Critical patent/JP2005093712A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Device Packages (AREA)
JP2003324884A 2003-09-17 2003-09-17 半導体発光装置 Pending JP2005093712A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003324884A JP2005093712A (ja) 2003-09-17 2003-09-17 半導体発光装置
CNA2004100465931A CN1599087A (zh) 2003-09-17 2004-06-11 半导体发光装置
US10/901,991 US20050057144A1 (en) 2003-09-17 2004-07-30 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003324884A JP2005093712A (ja) 2003-09-17 2003-09-17 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2005093712A true JP2005093712A (ja) 2005-04-07
JP2005093712A5 JP2005093712A5 (enExample) 2006-10-05

Family

ID=34270081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003324884A Pending JP2005093712A (ja) 2003-09-17 2003-09-17 半導体発光装置

Country Status (3)

Country Link
US (1) US20050057144A1 (enExample)
JP (1) JP2005093712A (enExample)
CN (1) CN1599087A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006308859A (ja) * 2005-04-28 2006-11-09 Mitsubishi Chemicals Corp 表示装置
JP2006324486A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 半導体発光装置
WO2008015833A1 (en) * 2006-08-02 2008-02-07 Tokai Kogaku Co., Ltd Fluorescent light emitting device
JP2009094351A (ja) * 2007-10-10 2009-04-30 Nichia Corp 発光装置およびその製造方法
US8766298B2 (en) 2006-09-01 2014-07-01 Cree, Inc. Encapsulant profile for light emitting diodes
JP2015062226A (ja) * 2013-09-23 2015-04-02 弘凱光電（深セン）有限公司 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法
US9768364B2 (en) 2014-05-21 2017-09-19 Nichia Corporation Light emitting device and method of manufacturing the same

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373646C (zh) * 2005-03-25 2008-03-05 李洲科技股份有限公司 多波长发光二极体构造及其制程
KR100666189B1 (ko) 2005-06-30 2007-01-09 서울반도체 주식회사 발광 소자
KR100665222B1 (ko) * 2005-07-26 2007-01-09 삼성전기주식회사 확산재료를 이용한 엘이디 패키지 및 그 제조 방법
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
JP4945106B2 (ja) * 2005-09-08 2012-06-06 スタンレー電気株式会社 半導体発光装置
KR100691440B1 (ko) * 2005-11-15 2007-03-09 삼성전기주식회사 Ｌｅｄ 패키지
JP4417906B2 (ja) * 2005-12-16 2010-02-17 株式会社東芝 発光装置及びその製造方法
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
CN100418242C (zh) * 2006-05-17 2008-09-10 广州南科集成电子有限公司 Led制造方法
WO2007141827A1 (ja) * 2006-05-30 2007-12-13 Fujikura Ltd. 発光素子実装用基板、光源、照明装置、表示装置、交通信号機、及び発光素子実装用基板の製造方法
US8251538B2 (en) * 2006-06-14 2012-08-28 Koninklijke Philips Electronics N.V. Lighting device
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
JP4961978B2 (ja) * 2006-11-30 2012-06-27 日亜化学工業株式会社 発光装置およびその製造方法
KR101423723B1 (ko) * 2007-10-29 2014-08-04 서울바이오시스 주식회사 발광 다이오드 패키지
TWI426206B (zh) 2008-12-25 2014-02-11 友達光電股份有限公司 發光二極體裝置
US8547009B2 (en) 2009-07-10 2013-10-01 Cree, Inc. Lighting structures including diffuser particles comprising phosphor host materials
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
JP5734581B2 (ja) * 2010-05-21 2015-06-17 シャープ株式会社 半導体発光装置
TWI427371B (zh) * 2010-10-06 2014-02-21 Au Optronics Corp 光源模組與液晶顯示器
CN101963315B (zh) * 2010-10-14 2016-01-20 友达光电股份有限公司 光源模块与液晶显示器
CN102610602A (zh) * 2011-01-25 2012-07-25 四川柏狮光电技术有限公司 单一封装材质高解析度led光源及其制备工艺
CN102720957A (zh) * 2011-12-04 2012-10-10 深圳市光峰光电技术有限公司 发光装置、投影装置和照明装置
CN103107266A (zh) * 2012-12-18 2013-05-15 浙江中宙光电股份有限公司 Led白光器件及其制备方法
CN103633230B (zh) * 2013-12-18 2016-05-11 东南大学 一种消除白光led色温偏差的荧光材料
CN103913799A (zh) * 2014-04-09 2014-07-09 常州巨猫电子科技有限公司 一种led导光柱及其应用
DE102015101216A1 (de) * 2015-01-28 2016-07-28 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung mit Strahlungskonversionselement und Verfahren zur Herstellung eines Strahlungskonversionselements
CN105405951A (zh) * 2015-12-20 2016-03-16 合肥艾斯克光电科技有限责任公司 一种led白光灯的封装方法
KR102389815B1 (ko) * 2017-06-05 2022-04-22 삼성전자주식회사 양자점 유리셀 및 이를 포함하는 발광소자 패키지

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122733A (en) * 1986-01-15 1992-06-16 Karel Havel Variable color digital multimeter
JP3420612B2 (ja) * 1993-06-25 2003-06-30 株式会社東芝 Ｌｅｄランプ
BR9709998B1 (pt) * 1996-06-26 2010-04-20 elemento de construção semicondutor, irradiador de luz, com elemento de conversão de luminescência
JP2001196642A (ja) * 2000-01-11 2001-07-19 Toyoda Gosei Co Ltd 発光装置
JP4406490B2 (ja) * 2000-03-14 2010-01-27 株式会社朝日ラバー 発光ダイオード
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
TW511303B (en) * 2001-08-21 2002-11-21 Wen-Jr He A light mixing layer and method
US6870311B2 (en) * 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
TW558775B (en) * 2002-06-27 2003-10-21 Solidlite Corp Package of compound type LED

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006308859A (ja) * 2005-04-28 2006-11-09 Mitsubishi Chemicals Corp 表示装置
JP2006324486A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 半導体発光装置
WO2008015833A1 (en) * 2006-08-02 2008-02-07 Tokai Kogaku Co., Ltd Fluorescent light emitting device
JP2008041739A (ja) * 2006-08-02 2008-02-21 Tokai Kogaku Kk 蛍光発光装置
US8766298B2 (en) 2006-09-01 2014-07-01 Cree, Inc. Encapsulant profile for light emitting diodes
JP2009094351A (ja) * 2007-10-10 2009-04-30 Nichia Corp 発光装置およびその製造方法
JP2015062226A (ja) * 2013-09-23 2015-04-02 弘凱光電（深セン）有限公司 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法
US9236541B2 (en) 2013-09-23 2016-01-12 Brightek Optoelectronic (Shenzhen) Co., Ltd. LED package structures for preventing lateral light leakage and method of manufacturing the same
US9768364B2 (en) 2014-05-21 2017-09-19 Nichia Corporation Light emitting device and method of manufacturing the same
US10763405B2 (en) 2014-05-21 2020-09-01 Nichia Corporation Light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
US20050057144A1 (en) 2005-03-17
CN1599087A (zh) 2005-03-23

Similar Documents

Publication Publication Date Title
JP2005093712A (ja) 半導体発光装置
JP5284006B2 (ja) 発光装置
KR100891810B1 (ko) 백색 발광 소자
KR101200400B1 (ko) 백색 발광 다이오드
JP5919504B2 (ja) 発光装置
JP5557828B2 (ja) 発光装置
US7586127B2 (en) Light emitting diode
CN1921159B (zh) 具有紫外发光二极管及紫外反光板的光源
JP2010034184A (ja) 発光装置
JP2010034183A (ja) 発光装置
US10096749B2 (en) Illumination light source, illumination apparatus, outdoor illumination apparatus, and vehicle headlight
US20120223660A1 (en) White light emitting device
JP2007123438A (ja) 蛍光体板及びこれを備えた発光装置
CN1497742A (zh) Led器件
WO2011132716A1 (ja) 半導体発光装置及び半導体発光装置の製造方法
JP2007088348A (ja) 照明装置及びバックライト装置、液晶表示装置
JP2005332951A (ja) 発光装置
JP2007134606A (ja) 白色光源
JP2008028181A (ja) 照明装置
JP2017054994A (ja) 発光装置、及び、照明装置
JP2002344021A (ja) 発光装置
JP2007005549A (ja) 白色発光ｌｅｄランプ
JP4591106B2 (ja) 白色発光装置
JP2002280615A (ja) 発光ダイオード
JP5106761B2 (ja) 高演色性発光ダイオードランプユニット

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060818

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060818

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090818

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090915

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100126