JP2005079364A - 半導体装置 - Google Patents
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- JP2005079364A JP2005079364A JP2003308423A JP2003308423A JP2005079364A JP 2005079364 A JP2005079364 A JP 2005079364A JP 2003308423 A JP2003308423 A JP 2003308423A JP 2003308423 A JP2003308423 A JP 2003308423A JP 2005079364 A JP2005079364 A JP 2005079364A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000007789 sealing Methods 0.000 claims abstract description 160
- 239000011347 resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000000465 moulding Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 11
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 15
- 238000004891 communication Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【課題】 電磁シールド効果を十分に得られると共に、小型,低コストで基板への実装自由度が高い半導体装置を提供する。
【解決手段】 この半導体装置は、リードフレーム1のグランド接続用の第3リード1cを基板のGND端子に接続すれば、導電性樹脂からなる第2封止部8は透光性樹脂からなる第1封止部7で封止された受光素子3および制御用IC5に対する電磁波シールドの役割を果たす。また、この第2封止部8の導電部21,22はリードフレーム1の突出部10,11が有する貫通孔16,17に充填され、この貫通孔16,17の周面16A,17Aに密接している。この貫通孔16,17は四角柱形状の周面16A,17Aを有する。
【選択図】 図1
Description
上記第2封止部は上記リードフレームが有するグランド接続用リードに接触する導電部を有し、
上記グランド接続用リードまたは上記第1封止部の少なくとも一方は、上記第2封止部の上記導電部が充填された充填孔を有することを特徴としている。
上記突出部が上記充填孔を有し、この充填孔は、多角柱形状の内周面を有する。
上記第1モールド工程において、上記第1封止部の上記充填孔をイジェクトピンで形成し、
上記第2モールド工程において、上記第1封止部の上記充填孔に上記導電部となる導電性樹脂を注入する。
図1(A),(B)に、この発明の第1実施形態としての光通信用半導体装置を示す。図1(A)は、図1(B)におけるA−A’線断面図である。
次に、図2,図3を参照して、この発明の光通信用半導体装置の第2実施形態を説明する。図2(A)はこの第2実施形態の外観を示す正面図であり、図2(B)はこの第2実施形態の側面図である。また、図3(A)は図3(B)のA−A’線断面図である。
次に、図4,図5を参照して、この発明の光通信用半導体装置の第3実施形態を説明する。図4(A)はこの第3実施形態の外観を示す正面図であり、図4(B)はこの第3実施形態の側面図である。また、図5(A)は図5(B)のA−A’線断面図である。この第3実施形態は、次の(i)の点だけが前述の第2実施形態と異なる。
次に、図6を参照して、この発明の光通信用半導体装置の第4実施形態を説明する。図6(A)は図6(B)のA−A’線断面図である。この第4実施形態は、次の(i),(ii)の点だけが前述の第2実施形態と異なる。
1a,31a 第1リード
1b,31b 第2リード
1c,31c 第3リード
2,32 搭載部
3,33 受光チップ
5,35 制御用ICチップ
7,37 第1封止部
8,38 第2封止部
10,11 突出部
16,17,46 貫通孔
21,22 導電部
40,44 充填孔
41,45,50 導電部
42 四角形状部
44,48 充填孔
47 延長部
Claims (9)
- リードフレームと、このリードフレームに搭載された受光素子と、上記リードフレームに搭載されると共に上記受光素子に電気的に接続された信号処理部と、上記受光素子と信号処理部を封止すると共に透光性樹脂で作製された第1封止部と、上記第1封止部を覆うと共に導電性樹脂で作製された第2封止部とを備えた半導体装置であって、
上記第2封止部は上記リードフレームが有するグランド接続用リードに接触する導電部を有し、
上記グランド接続用リードまたは上記第1封止部の少なくとも一方は、上記第2封止部の上記導電部が充填された充填孔を有することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記グランド接続用リードは、上記第1封止部から上記第2封止部内に突出している突出部を有し、
上記突出部が上記充填孔を有し、この充填孔は、多角柱形状の内周面を有することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記第1封止部は上記充填孔を有し、この充填孔は内周面が円柱形状であることを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
上記グランド接続用リードは、上記第2封止部の上記導電部から延長している延長部が充填された貫通孔を有することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記第1封止部が上記充填孔を有し、この充填孔は内周面が多角柱形状であることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記グランド接続用リードは、上記第2封止部が接触する接触領域にノッチが形成されたことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記グランド接続用リードは、上記第2封止部が接触する接触領域が梨地にされたことを特徴とする半導体装置。 - 請求項1に記載の半導体装置を製造する製造方法であって、
上記第1封止部を樹脂モールドで作製する第1モールド工程と、上記第2封止部を樹脂モールドで作製する第2モールド工程とを有し、
上記第1モールド工程において、上記第1封止部の上記充填孔をイジェクトピンで形成し、
上記第2モールド工程において、上記第1封止部の上記充填孔に上記導電部となる導電性樹脂を注入することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置を備えた電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003308423A JP3991018B2 (ja) | 2003-09-01 | 2003-09-01 | 半導体装置 |
US10/929,893 US7009267B2 (en) | 2003-09-01 | 2004-08-31 | Semiconductor device |
CNB2004100901875A CN1291487C (zh) | 2003-09-01 | 2004-09-01 | 半导体装置及其制造方法、和具有该半导体装置的电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003308423A JP3991018B2 (ja) | 2003-09-01 | 2003-09-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005079364A true JP2005079364A (ja) | 2005-03-24 |
JP3991018B2 JP3991018B2 (ja) | 2007-10-17 |
Family
ID=34214165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003308423A Expired - Lifetime JP3991018B2 (ja) | 2003-09-01 | 2003-09-01 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7009267B2 (ja) |
JP (1) | JP3991018B2 (ja) |
CN (1) | CN1291487C (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009060071A (ja) * | 2007-08-31 | 2009-03-19 | Yiguang Electronic Ind Co Ltd | 電磁干渉を防止する電子装置およびその製造方法 |
JP2010021225A (ja) * | 2008-07-09 | 2010-01-28 | Sharp Corp | 電子部品およびその製造方法、並びに、電子部品を備えた電子装置 |
WO2022085446A1 (ja) * | 2020-10-19 | 2022-04-28 | ローム株式会社 | 半導体装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129519B2 (en) * | 2002-05-08 | 2006-10-31 | Advanced Technology Materials, Inc. | Monitoring system comprising infrared thermopile detector |
US6617175B1 (en) * | 2002-05-08 | 2003-09-09 | Advanced Technology Materials, Inc. | Infrared thermopile detector system for semiconductor process monitoring and control |
WO2004088415A2 (en) * | 2003-03-28 | 2004-10-14 | Advanced Technology Materials Inc. | Photometrically modulated delivery of reagents |
US7063097B2 (en) | 2003-03-28 | 2006-06-20 | Advanced Technology Materials, Inc. | In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration |
JP4146815B2 (ja) * | 2004-03-26 | 2008-09-10 | シャープ株式会社 | 光通信用半導体装置の製造方法 |
JP2005347632A (ja) * | 2004-06-04 | 2005-12-15 | Sharp Corp | 半導体装置および電子機器 |
US20080006775A1 (en) * | 2006-06-22 | 2008-01-10 | Arno Jose I | Infrared gas detection systems and methods |
WO2008083524A1 (fr) * | 2007-01-12 | 2008-07-17 | Xiamen Hualian Electronics Co., Ltd. | Méthode de fabrication d'une télécommande ir à amplificateur/récepteur |
TW200840246A (en) * | 2007-03-29 | 2008-10-01 | Unity Opto Technology Co Ltd | Infrared receiver manufacturing method and the structure thereof |
TW201032319A (en) * | 2009-02-25 | 2010-09-01 | Everlight Electronics Co Ltd | Semiconductor optoelectronic device and quad flat non-leaded optoelectronic device |
EP2224486A3 (en) * | 2009-02-25 | 2012-09-12 | Everlight Electronics Co., Ltd. | Quad flat non-leaded chip package structure |
US9340878B2 (en) | 2009-05-29 | 2016-05-17 | Entegris, Inc. | TPIR apparatus for monitoring tungsten hexafluoride processing to detect gas phase nucleation, and method and system utilizing same |
CN102903712A (zh) * | 2012-10-26 | 2013-01-30 | 慧创就光电有限公司 | 一种输入输出式光电装置 |
CN109037977B (zh) * | 2018-08-31 | 2024-04-19 | 珠海格力电器股份有限公司 | 线耳结构及与线耳结构固定连接的接线端子及光伏多联器 |
CN111952253A (zh) * | 2020-08-10 | 2020-11-17 | 江西兰丰科技有限公司 | 一种抗干扰的红外线接收头 |
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US3560813A (en) * | 1969-03-13 | 1971-02-02 | Fairchild Camera Instr Co | Hybridized monolithic array package |
US4309717A (en) * | 1979-07-16 | 1982-01-05 | Rca Corporation | Coaxially mounted high frequency light detector housing |
US4439006A (en) * | 1981-05-18 | 1984-03-27 | Motorola, Inc. | Low cost electro-optical connector |
JPS612371A (ja) * | 1984-06-14 | 1986-01-08 | Mitsubishi Electric Corp | 半導体受光装置 |
US5089861A (en) * | 1990-05-09 | 1992-02-18 | Rohm Co., Ltd. | Semiconductor laser device with mounting block |
JPH05315639A (ja) * | 1991-02-15 | 1993-11-26 | Fujimoto Denki Kk | 光電半導体装置およびその製造方法 |
JP2750972B2 (ja) * | 1991-12-26 | 1998-05-18 | シャープ株式会社 | 光学装置およびその製造方法 |
JPH0984162A (ja) | 1995-09-14 | 1997-03-28 | Sharp Corp | リモコン受光ユニット |
JP4072443B2 (ja) * | 2003-02-05 | 2008-04-09 | シャープ株式会社 | 受光センサ |
-
2003
- 2003-09-01 JP JP2003308423A patent/JP3991018B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-31 US US10/929,893 patent/US7009267B2/en not_active Expired - Lifetime
- 2004-09-01 CN CNB2004100901875A patent/CN1291487C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009060071A (ja) * | 2007-08-31 | 2009-03-19 | Yiguang Electronic Ind Co Ltd | 電磁干渉を防止する電子装置およびその製造方法 |
JP2010021225A (ja) * | 2008-07-09 | 2010-01-28 | Sharp Corp | 電子部品およびその製造方法、並びに、電子部品を備えた電子装置 |
WO2022085446A1 (ja) * | 2020-10-19 | 2022-04-28 | ローム株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP3991018B2 (ja) | 2007-10-17 |
US20050045999A1 (en) | 2005-03-03 |
US7009267B2 (en) | 2006-03-07 |
CN1291487C (zh) | 2006-12-20 |
CN1601728A (zh) | 2005-03-30 |
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