JP2005039299A - 強誘電体メモリ及びその製造方法 - Google Patents

強誘電体メモリ及びその製造方法 Download PDF

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Publication number
JP2005039299A
JP2005039299A JP2004319616A JP2004319616A JP2005039299A JP 2005039299 A JP2005039299 A JP 2005039299A JP 2004319616 A JP2004319616 A JP 2004319616A JP 2004319616 A JP2004319616 A JP 2004319616A JP 2005039299 A JP2005039299 A JP 2005039299A
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Japan
Prior art keywords
film
insulating film
capacitor
plug
interlayer insulating
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Pending
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JP2004319616A
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Japanese (ja)
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JP2005039299A5 (enrdf_load_stackoverflow
Inventor
Takumi Mikawa
巧 三河
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004319616A priority Critical patent/JP2005039299A/ja
Publication of JP2005039299A publication Critical patent/JP2005039299A/ja
Publication of JP2005039299A5 publication Critical patent/JP2005039299A5/ja
Pending legal-status Critical Current

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JP2004319616A 2000-10-17 2004-11-02 強誘電体メモリ及びその製造方法 Pending JP2005039299A (ja)

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JP2004319616A JP2005039299A (ja) 2000-10-17 2004-11-02 強誘電体メモリ及びその製造方法

Applications Claiming Priority (2)

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JP2000316033 2000-10-17
JP2004319616A JP2005039299A (ja) 2000-10-17 2004-11-02 強誘電体メモリ及びその製造方法

Related Parent Applications (1)

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JP2001288468A Division JP2002198494A (ja) 2000-10-17 2001-09-21 強誘電体メモリ及びその製造方法

Publications (2)

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JP2005039299A true JP2005039299A (ja) 2005-02-10
JP2005039299A5 JP2005039299A5 (enrdf_load_stackoverflow) 2006-01-12

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JP2004319616A Pending JP2005039299A (ja) 2000-10-17 2004-11-02 強誘電体メモリ及びその製造方法

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JP (1) JP2005039299A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294695A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8093578B2 (en) 2006-11-20 2012-01-10 Panasonic Corporation Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294695A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8093578B2 (en) 2006-11-20 2012-01-10 Panasonic Corporation Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element

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