JP2005033197A5 - - Google Patents
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- Publication number
- JP2005033197A5 JP2005033197A5 JP2004183048A JP2004183048A JP2005033197A5 JP 2005033197 A5 JP2005033197 A5 JP 2005033197A5 JP 2004183048 A JP2004183048 A JP 2004183048A JP 2004183048 A JP2004183048 A JP 2004183048A JP 2005033197 A5 JP2005033197 A5 JP 2005033197A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor device
- metal
- layer
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 34
- 150000004767 nitrides Chemical class 0.000 claims 22
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 150000002736 metal compounds Chemical class 0.000 claims 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical class [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 claims 4
- 150000002830 nitrogen compounds Chemical class 0.000 claims 4
- 150000002927 oxygen compounds Chemical class 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 239000011777 magnesium Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000605 extraction Methods 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 150000003623 transition metal compounds Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004183048A JP4572597B2 (ja) | 2003-06-20 | 2004-06-21 | 窒化物半導体素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003177387 | 2003-06-20 | ||
| JP2004183048A JP4572597B2 (ja) | 2003-06-20 | 2004-06-21 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005033197A JP2005033197A (ja) | 2005-02-03 |
| JP2005033197A5 true JP2005033197A5 (enrdf_load_stackoverflow) | 2007-08-02 |
| JP4572597B2 JP4572597B2 (ja) | 2010-11-04 |
Family
ID=34220100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004183048A Expired - Fee Related JP4572597B2 (ja) | 2003-06-20 | 2004-06-21 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4572597B2 (enrdf_load_stackoverflow) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4980615B2 (ja) * | 2005-02-08 | 2012-07-18 | ローム株式会社 | 半導体発光素子およびその製法 |
| JP2006228855A (ja) * | 2005-02-16 | 2006-08-31 | Rohm Co Ltd | 半導体発光素子およびその製法 |
| US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
| JP2006294907A (ja) * | 2005-04-12 | 2006-10-26 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
| JP5196288B2 (ja) * | 2005-04-27 | 2013-05-15 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
| KR101107473B1 (ko) | 2005-05-17 | 2012-01-19 | 엘지이노텍 주식회사 | 발광 다이오드 |
| JP2006332365A (ja) * | 2005-05-26 | 2006-12-07 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置 |
| JP4969087B2 (ja) * | 2005-11-28 | 2012-07-04 | スタンレー電気株式会社 | 共晶ボンディング発光装置とその製造方法 |
| JP5446059B2 (ja) * | 2006-04-24 | 2014-03-19 | 豊田合成株式会社 | ＧａＮ系半導体発光素子の製造方法 |
| JP2008192782A (ja) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子 |
| JP5264233B2 (ja) * | 2008-03-24 | 2013-08-14 | 三菱電機株式会社 | 有機電界発光型表示装置 |
| JP5123269B2 (ja) | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
| KR101533817B1 (ko) * | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| KR100999756B1 (ko) * | 2009-03-13 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| KR101081193B1 (ko) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101014013B1 (ko) | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101945301B1 (ko) | 2009-10-16 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| JP5725927B2 (ja) | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | 高効率発光ダイオード及びその製造方法 |
| CN102432958B (zh) * | 2010-11-03 | 2014-05-07 | 如皋市中如化工有限公司 | 一种耐寒阻燃级pvc电缆料 |
| JP2012142508A (ja) * | 2011-01-06 | 2012-07-26 | Hitachi Cable Ltd | 半導体素子用ウェハ |
| JP5378582B2 (ja) * | 2012-08-27 | 2013-12-25 | 株式会社東芝 | 半導体発光素子の製造方法 |
| JP6038564B2 (ja) * | 2012-09-20 | 2016-12-07 | Ｄｏｗａエレクトロニクス株式会社 | 半導体積層体接合用基板およびその製造方法 |
| JP5818031B2 (ja) * | 2013-03-21 | 2015-11-18 | ウシオ電機株式会社 | Ｌｅｄ素子 |
| KR102256590B1 (ko) * | 2014-07-31 | 2021-05-26 | 서울바이오시스 주식회사 | 발광 다이오드 |
| JP6668863B2 (ja) * | 2016-03-22 | 2020-03-18 | 日亜化学工業株式会社 | 発光素子 |
| JP7262965B2 (ja) * | 2018-10-17 | 2023-04-24 | スタンレー電気株式会社 | 半導体発光素子 |
| KR102843626B1 (ko) * | 2024-09-27 | 2025-08-06 | 광운대학교 산학협력단 | 열전도층을 구비한 전력 반도체 패키지 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3130292B2 (ja) * | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | 半導体発光装置及びその製造方法 |
| JP2003168823A (ja) * | 2001-09-18 | 2003-06-13 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP2003243705A (ja) * | 2002-02-07 | 2003-08-29 | Lumileds Lighting Us Llc | 発光半導体の方法及び装置 |
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2004
- 2004-06-21 JP JP2004183048A patent/JP4572597B2/ja not_active Expired - Fee Related