JP2004527875A5 - - Google Patents

Download PDF

Info

Publication number
JP2004527875A5
JP2004527875A5 JP2002553215A JP2002553215A JP2004527875A5 JP 2004527875 A5 JP2004527875 A5 JP 2004527875A5 JP 2002553215 A JP2002553215 A JP 2002553215A JP 2002553215 A JP2002553215 A JP 2002553215A JP 2004527875 A5 JP2004527875 A5 JP 2004527875A5
Authority
JP
Japan
Prior art keywords
ion beam
cluster ion
gas cluster
workpiece
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002553215A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004527875A (ja
JP4168381B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2001/050343 external-priority patent/WO2002052608A2/en
Publication of JP2004527875A publication Critical patent/JP2004527875A/ja
Publication of JP2004527875A5 publication Critical patent/JP2004527875A5/ja
Application granted granted Critical
Publication of JP4168381B2 publication Critical patent/JP4168381B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002553215A 2000-12-26 2001-12-26 ガスクラスターイオンビームのための充電制御および線量測定システム Expired - Lifetime JP4168381B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25828000P 2000-12-26 2000-12-26
PCT/US2001/050343 WO2002052608A2 (en) 2000-12-26 2001-12-26 Charging control and dosimetry system for gas cluster ion beam

Publications (3)

Publication Number Publication Date
JP2004527875A JP2004527875A (ja) 2004-09-09
JP2004527875A5 true JP2004527875A5 (enExample) 2005-12-22
JP4168381B2 JP4168381B2 (ja) 2008-10-22

Family

ID=22979888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002553215A Expired - Lifetime JP4168381B2 (ja) 2000-12-26 2001-12-26 ガスクラスターイオンビームのための充電制御および線量測定システム

Country Status (5)

Country Link
US (1) US6646277B2 (enExample)
EP (1) EP1348227B1 (enExample)
JP (1) JP4168381B2 (enExample)
DE (1) DE60122379T2 (enExample)
WO (1) WO2002052608A2 (enExample)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1550144A4 (en) * 2002-09-23 2009-07-08 Tel Epion Inc ION BEAM BEAM TREATMENT METHOD AND SYSTEM THEREFOR
EP1584104A4 (en) * 2002-12-12 2010-05-26 Tel Epion Inc RE-CRYSTALLIZATION OF A SEMICONDUCTIVE SURFACE FILM AND SEMICONDUCTOR DOTING BY MEANS OF ENERGETIC CLUSTER RADIATION
US7410890B2 (en) * 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
WO2005089459A2 (en) 2004-03-17 2005-09-29 Epion Corporation Method and apparatus for improved beam stability in high current gas-cluster ion beam processing system
US7060989B2 (en) * 2004-03-19 2006-06-13 Epion Corporation Method and apparatus for improved processing with a gas-cluster ion beam
US6953942B1 (en) * 2004-09-20 2005-10-11 Axcelis Technologies, Inc. Ion beam utilization during scanned ion implantation
EP1807859A2 (en) * 2004-10-25 2007-07-18 TEL Epion Inc. Ionizer and method for gas-cluster ion-beam formation
US20060093753A1 (en) * 2004-10-29 2006-05-04 Nickel Janice H Method of engineering a property of an interface
US7799683B2 (en) * 2004-11-08 2010-09-21 Tel Epion, Inc. Copper interconnect wiring and method and apparatus for forming thereof
US7504135B2 (en) * 2005-02-03 2009-03-17 Samsung Electronics Co., Ltd Method of fabricating a manganese diffusion barrier
US7186992B2 (en) * 2005-02-07 2007-03-06 Hewlett-Packard Development Company, L.P. Method of fabricating a polarizing layer on an interface
WO2006123739A1 (ja) * 2005-05-20 2006-11-23 Japan Aviation Electronics Industry Limited 固体表面の平坦化方法及びその装置
JP5105729B2 (ja) * 2005-09-01 2012-12-26 キヤノン株式会社 ガスクラスターイオンビームによる加工方法
KR20080078703A (ko) 2005-12-01 2008-08-27 텔 에피온 인크 이온 빔을 통해 가공물을 스캐닝하기 위한 방법 및 장치
US7342240B2 (en) * 2006-02-24 2008-03-11 Varian Semiconductor Equipment Associates, Inc. Ion beam current monitoring
JP2007277708A (ja) * 2006-03-17 2007-10-25 Canon Inc 成膜装置および成膜方法
US7420189B2 (en) * 2006-04-04 2008-09-02 Olympus Corporation Ultra precise polishing method and ultra precise polishing apparatus
US7642531B2 (en) * 2006-07-14 2010-01-05 Tel Epion Inc. Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipment
US7561983B2 (en) * 2006-09-29 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation based on ion beam angle-related information
US7550749B2 (en) * 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7550748B2 (en) * 2007-03-30 2009-06-23 Tel Epion, Inc. Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam
US7566888B2 (en) * 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US20090032725A1 (en) * 2007-07-30 2009-02-05 Tokyo Electron Limited Apparatus and methods for treating a workpiece using a gas cluster ion beam
US7917241B2 (en) * 2007-08-01 2011-03-29 Tel Epion Inc. Method and system for increasing throughput during location specific processing of a plurality of substrates
US20100227523A1 (en) * 2007-09-14 2010-09-09 Exogenesis Corporation Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby
US9144627B2 (en) 2007-09-14 2015-09-29 Exogenesis Corporation Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby
US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7754588B2 (en) * 2007-09-28 2010-07-13 Tel Epion Inc. Method to improve a copper/dielectric interface in semiconductor devices
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
US8372489B2 (en) * 2007-09-28 2013-02-12 Tel Epion Inc. Method for directional deposition using a gas cluster ion beam
US7794798B2 (en) * 2007-09-29 2010-09-14 Tel Epion Inc. Method for depositing films using gas cluster ion beam processing
US7825389B2 (en) * 2007-12-04 2010-11-02 Tel Epion Inc. Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture
US7883999B2 (en) * 2008-01-25 2011-02-08 Tel Epion Inc. Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US20090314963A1 (en) * 2008-06-24 2009-12-24 Tel Epion Inc. Method for forming trench isolation
US9103031B2 (en) * 2008-06-24 2015-08-11 Tel Epion Inc. Method and system for growing a thin film using a gas cluster ion beam
US7905199B2 (en) * 2008-06-24 2011-03-15 Tel Epion Inc. Method and system for directional growth using a gas cluster ion beam
US7776743B2 (en) * 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US7871929B2 (en) * 2008-07-30 2011-01-18 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US8202435B2 (en) * 2008-08-01 2012-06-19 Tel Epion Inc. Method for selectively etching areas of a substrate using a gas cluster ion beam
US7948734B2 (en) * 2008-09-11 2011-05-24 Tel Epion Inc. Electrostatic chuck power supply
US8169769B2 (en) * 2008-09-11 2012-05-01 Tel Epion Inc. Electrostatic chuck power supply
US7834327B2 (en) * 2008-09-23 2010-11-16 Tel Epion Inc. Self-biasing active load circuit and related power supply for use in a charged particle beam processing system
US8313663B2 (en) * 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8981322B2 (en) * 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US20100200774A1 (en) * 2009-02-09 2010-08-12 Tel Epion Inc. Multi-sequence film deposition and growth using gas cluster ion beam processing
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7947582B2 (en) * 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
JP5701783B2 (ja) * 2009-03-11 2015-04-15 エクソジェネシス コーポレーション 表面の生物活性特性を改善する方法とこの方法によって改善された表面をもつ物体
US20100243913A1 (en) * 2009-03-31 2010-09-30 Tel Epion Inc. Pre-aligned nozzle/skimmer
US8877299B2 (en) * 2009-03-31 2014-11-04 Tel Epion Inc. Method for enhancing a substrate using gas cluster ion beam processing
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US20120000421A1 (en) * 2010-07-02 2012-01-05 Varian Semicondutor Equipment Associates, Inc. Control apparatus for plasma immersion ion implantation of a dielectric substrate
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
EP2758184A4 (en) 2011-08-22 2015-06-24 Exogenesis Corp METHOD FOR IMPROVING THE BIOACTIVE PROPERTIES OF A SURFACE AND OBJECTS WITH SUCH IMPROVED SURFACES
US8546209B1 (en) 2012-06-15 2013-10-01 International Business Machines Corporation Replacement metal gate processing with reduced interlevel dielectric layer etch rate
US9111719B1 (en) * 2014-01-30 2015-08-18 Axcelis Technologies, Inc. Method for enhancing beam utilization in a scanned beam ion implanter
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
CN111034038B (zh) * 2017-09-29 2024-02-06 株式会社村田制作所 压电基板的制造装置和压电基板的制造方法
TWI867059B (zh) * 2019-10-04 2024-12-21 漢辰科技股份有限公司 減少離子佈植系統顆粒汙染的方法、離子佈植系統以及非暫時性電腦可讀取儲存媒體

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021675A (en) 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4361762A (en) 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
JPS60143630A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd イオン注入方法
US4816693A (en) * 1987-08-21 1989-03-28 National Electrostatics Corp. Apparatus and method for uniform ion dose control
US5329129A (en) * 1991-03-13 1994-07-12 Mitsubishi Denki Kabushiki Kaisha Electron shower apparatus including filament current control
JP2965739B2 (ja) 1991-03-28 1999-10-18 大日本印刷株式会社 集束イオンビーム装置
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
US6331227B1 (en) * 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
EP1305169A1 (en) * 2000-05-02 2003-05-02 Epion Corporation System and method for adjusting the properties of a device by gcib processing
AU2001273274A1 (en) * 2000-07-10 2002-01-21 Epion Corporation Improving effectiveness of artificial hip by gcib
DE60140749D1 (de) * 2000-07-10 2010-01-21 Tel Epion Inc Ung
JP2004502510A (ja) * 2000-07-10 2004-01-29 エピオン コーポレイション Gcibによる眼内レンズの改善
KR100845635B1 (ko) * 2000-11-22 2008-07-10 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입용 하이브리드 주사 시스템 및 방법

Similar Documents

Publication Publication Date Title
JP2004527875A5 (enExample)
WO2002052608A3 (en) Charging control and dosimetry system for gas cluster ion beam
Conrad Plasma source ion implantation: A new approach to ion beam modification of materials
EP3178585A1 (en) Method for treating raw-material powder, apparatus for treating raw-material powder, and method for producing object
JPH04137728A (ja) 集束イオンビームエッチング装置
WO2002019374A3 (en) Methods and apparatus for adjusting beam parallelism in ion implanters
JP5113155B2 (ja) ロードロック制御
JPH11502049A (ja) プラズマジェットでウェーハを処理する装置
US20140124367A1 (en) Sample preparation apparatus, sample preparation method, and charged particle beam apparatus using the same
GB2308006A (en) Method of and system for controlling energy including in fusion
EP0942453A3 (en) Monitoring of plasma constituents using optical emission spectroscopy
EP0964425A3 (en) Apparatus for processing a work piece with a uniformly neutralised ion beam
KR920018839A (ko) 이온비임 주입방법 및 장치
TWI455170B (zh) 用於離子佈植之束角測量的方法與設備
EP1367629A3 (en) Apparatus for tilting a beam system
EP0779081A3 (en) Charged particle beam apparatus and method of operating the same
CA2129403C (en) Ion implanting apparatus and ion implanting method
KR100654673B1 (ko) 이온빔 스퍼터링에 의한 금형 표면연마장치 및 그 연마방법
Hartmann et al. Lateral implantation dose measurements of plasma immersion ion implanted non-planar samples
JPS55154581A (en) Ion etching method
US4510386A (en) Thinning of specimens for examination under the electron microscope
JPS57147857A (en) Sample observation through scanning electron microscope
DE112006001555T5 (de) Ladungspartikel-Strahlvorrichtung und Verfahren zum Erzeugen eines Ladungspartikel-Strahlabbilds
JPS554937A (en) Dry etching method
JPS55158890A (en) Electric-charged particle beam processing device