JP2004527104A5 - - Google Patents

Download PDF

Info

Publication number
JP2004527104A5
JP2004527104A5 JP2002558333A JP2002558333A JP2004527104A5 JP 2004527104 A5 JP2004527104 A5 JP 2004527104A5 JP 2002558333 A JP2002558333 A JP 2002558333A JP 2002558333 A JP2002558333 A JP 2002558333A JP 2004527104 A5 JP2004527104 A5 JP 2004527104A5
Authority
JP
Japan
Prior art keywords
layer
polymer
less
dielectric constant
nanoporous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002558333A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004527104A (ja
Filing date
Publication date
Priority claimed from US09/741,634 external-priority patent/US20020076543A1/en
Application filed filed Critical
Publication of JP2004527104A publication Critical patent/JP2004527104A/ja
Publication of JP2004527104A5 publication Critical patent/JP2004527104A5/ja
Pending legal-status Critical Current

Links

JP2002558333A 2000-12-19 2001-12-18 層状誘電性ナノ多孔質材料、およびその製造方法 Pending JP2004527104A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/741,634 US20020076543A1 (en) 2000-12-19 2000-12-19 Layered dielectric nanoporous materials and methods of producing same
PCT/US2001/048869 WO2002058145A2 (en) 2000-12-19 2001-12-18 Layered dielectric nanoporous materials and methods of producing same

Publications (2)

Publication Number Publication Date
JP2004527104A JP2004527104A (ja) 2004-09-02
JP2004527104A5 true JP2004527104A5 (https=) 2005-07-28

Family

ID=24981532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002558333A Pending JP2004527104A (ja) 2000-12-19 2001-12-18 層状誘電性ナノ多孔質材料、およびその製造方法

Country Status (8)

Country Link
US (1) US20020076543A1 (https=)
EP (1) EP1410440A2 (https=)
JP (1) JP2004527104A (https=)
KR (1) KR20030065548A (https=)
CN (1) CN1555575A (https=)
AU (1) AU2002245149A1 (https=)
CA (1) CA2431993A1 (https=)
WO (1) WO2002058145A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196422B2 (en) * 2001-12-14 2007-03-27 Intel Corporation Low-dielectric constant structure with a multilayer stack of thin films with pores
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7741773B2 (en) * 2004-04-09 2010-06-22 Ifire Ip Corporation Thick film dielectric structure for thick dielectric electroluminescent displays
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
WO2012064177A1 (en) * 2010-11-11 2012-05-18 Mimos Berhad Nanoporous membrane and method of forming thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01235254A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体装置及びその製造方法
US5382684A (en) * 1993-07-06 1995-01-17 Mobil Oil Corporation Nitrogenous 1,3-substituted adamantanes
US5874516A (en) * 1995-07-13 1999-02-23 Air Products And Chemicals, Inc. Nonfunctionalized poly(arylene ethers)
US6063714A (en) * 1995-11-16 2000-05-16 Texas Instruments Incorporated Nanoporous dielectric thin film surface modification
JP2001520805A (ja) * 1997-04-17 2001-10-30 アライドシグナル・インコーポレーテッド 等級化された密度を有するナノポーラス誘電体フィルム及びそのようなフィルムの製造方法
US6077792A (en) * 1997-07-14 2000-06-20 Micron Technology, Inc. Method of forming foamed polymeric material for an integrated circuit
US6093636A (en) * 1998-07-08 2000-07-25 International Business Machines Corporation Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets
US6090724A (en) * 1998-12-15 2000-07-18 Lsi Logic Corporation Method for composing a thermally conductive thin film having a low dielectric property
US6171687B1 (en) * 1999-10-18 2001-01-09 Honeywell International Inc. Infiltrated nanoporous materials and methods of producing same

Similar Documents

Publication Publication Date Title
CN100428498C (zh) 一种硅部件的结合方法及该方法所用黏结剂和其结合制品
CN1293622C (zh) 半导体器件及其制造方法
JP4594988B2 (ja) 金属間誘電体として用いられる低k及び超低kの有機シリケート膜の疎水性の回復
CN102449746B (zh) 蚀刻液及用其形成沟槽隔离结构的方法
JP4709506B2 (ja) 電気的相互接続構造およびその形成方法
CN1650406A (zh) 排序二相介电薄膜及含有该膜的半导体器件
KR20070083711A (ko) 낮은-k 유전 기능 임프린팅 재료
JP2008544484A (ja) プリメタルおよび/またはシャロートレンチアイソレーションに用いられるスピン−オン誘電体材料のための紫外線硬化処理方法
CN1278415C (zh) 具有多个布线层的半导体器件及其制造方法
CN1261997C (zh) 微电子工艺和结构
CN1965402A (zh) 用于形成沟槽隔离结构的方法
CN102646666A (zh) 作为化学-机械抛光停止层的介电保护层
JP2004527104A5 (https=)
CN100552542C (zh) 由旋涂上的陶瓷薄膜组成的构图层
CN1237604C (zh) 半导体器件
JP2024521248A (ja) 多層構造の製造方法
US8017025B2 (en) Method for producing air gaps using nanotubes
TWI225262B (en) A process for spin-on coating with an organic material having a low dielectric constant
CN1102293C (zh) 集成电路器件制造工艺
CN104465506B (zh) 铜互连中空气隙的形成方法
EP1026726A3 (en) Semiconductor device having an insulating film with voides and method for manufacturing the same
KR101150267B1 (ko) 낮은 유전 상수 k를 가진 제올라이트-탄소 도핑된옥사이드 복합체 유전체
JP2001077192A (ja) 半導体装置およびその製造方法
US6982206B1 (en) Mechanism for improving the structural integrity of low-k films
CN1462069A (zh) 布线结构的形成方法