JP2004513221A - 銅シード層の異常を克服し表面形状サイズ及びアスペクト比を調整する方法と装置 - Google Patents

銅シード層の異常を克服し表面形状サイズ及びアスペクト比を調整する方法と装置 Download PDF

Info

Publication number
JP2004513221A
JP2004513221A JP2001586638A JP2001586638A JP2004513221A JP 2004513221 A JP2004513221 A JP 2004513221A JP 2001586638 A JP2001586638 A JP 2001586638A JP 2001586638 A JP2001586638 A JP 2001586638A JP 2004513221 A JP2004513221 A JP 2004513221A
Authority
JP
Japan
Prior art keywords
substrate
conductive material
layer
seconds
aspect ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001586638A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004513221A5 (enExample
Inventor
ヘイ，　ピーター
ワック，　ヤン−サン，　レオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2004513221A publication Critical patent/JP2004513221A/ja
Publication of JP2004513221A5 publication Critical patent/JP2004513221A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001586638A 2000-05-23 2001-05-10 銅シード層の異常を克服し表面形状サイズ及びアスペクト比を調整する方法と装置 Withdrawn JP2004513221A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20650000P 2000-05-23 2000-05-23
PCT/US2001/015200 WO2001090446A2 (en) 2000-05-23 2001-05-10 Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio

Publications (2)

Publication Number Publication Date
JP2004513221A true JP2004513221A (ja) 2004-04-30
JP2004513221A5 JP2004513221A5 (enExample) 2005-06-02

Family

ID=22766672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001586638A Withdrawn JP2004513221A (ja) 2000-05-23 2001-05-10 銅シード層の異常を克服し表面形状サイズ及びアスペクト比を調整する方法と装置

Country Status (5)

Country Link
US (1) US6808612B2 (enExample)
EP (1) EP1337693A2 (enExample)
JP (1) JP2004513221A (enExample)
TW (1) TW492078B (enExample)
WO (1) WO2001090446A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913680B1 (en) 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
JP2004536217A (ja) * 2000-10-03 2004-12-02 アプライド　マテリアルズ　インコーポレイテッド 金属蒸着のためのエントリーにあたって半導体基板を傾けるための方法と関連する装置
US6911136B2 (en) 2002-04-29 2005-06-28 Applied Materials, Inc. Method for regulating the electrical power applied to a substrate during an immersion process
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040245107A1 (en) * 2003-06-03 2004-12-09 Guangli Che Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions
JP2005039142A (ja) * 2003-07-18 2005-02-10 Nec Electronics Corp 半導体装置の製造方法
US20060175201A1 (en) * 2005-02-07 2006-08-10 Hooman Hafezi Immersion process for electroplating applications
CN100578743C (zh) * 2005-12-02 2010-01-06 株式会社爱发科 Cu膜的形成方法
US8492878B2 (en) * 2010-07-21 2013-07-23 International Business Machines Corporation Metal-contamination-free through-substrate via structure
US8632628B2 (en) 2010-10-29 2014-01-21 Lam Research Corporation Solutions and methods for metal deposition
US10214826B2 (en) * 2013-01-29 2019-02-26 Novellus Systems, Inc. Low copper electroplating solutions for fill and defect control
US20160102416A1 (en) * 2013-01-29 2016-04-14 Novellus Systems, Inc. Low copper/high halide electroplating solutions for fill and defect control
KR101290670B1 (ko) * 2013-06-03 2013-07-29 구본술 도금 신뢰성 향상 기능을 갖는 내장형 안테나 제조방법
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
US9758896B2 (en) 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US20160309596A1 (en) * 2015-04-15 2016-10-20 Applied Materials, Inc. Methods for forming cobalt interconnects
WO2019199614A1 (en) 2018-04-09 2019-10-17 Lam Research Corporation Copper electrofill on non-copper liner layers
US11203816B1 (en) * 2020-10-23 2021-12-21 Applied Materials, Inc. Electroplating seed layer buildup and repair

Family Cites Families (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170870B (nl) 1952-07-05 Koninklijke Hoogovens En Staal Werkwijze voor het vuurvast bekleden van ovenwanden en een aldus vervaardigde metallurgische schachtoven.
DE932709C (de) 1952-08-31 1955-09-08 W Kampschulte & Cie Dr Verfahren zur Abscheidung von glatten und glaenzenden Kupferueberzuegen
US2882209A (en) 1957-05-20 1959-04-14 Udylite Res Corp Electrodeposition of copper from an acid bath
SU443108A1 (ru) 1968-11-22 1974-09-15 Центральный Научно-Исследовательский Институт Технологии Машиностроения Электролит меднени
US3627661A (en) 1969-02-13 1971-12-14 Ransburg Electro Coating Corp Electronic apparatus and method
US3649509A (en) 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US3727620A (en) 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3770598A (en) 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
SE444822B (sv) 1975-03-11 1986-05-12 Oxy Metal Industries Corp Bad och medel for elektrolytisk utfellning av koppar
JPS5271871A (en) 1975-12-11 1977-06-15 Nec Corp Washing apparatus
JPS5819350B2 (ja) 1976-04-08 1983-04-18 富士写真フイルム株式会社 スピンコ−テイング方法
JPS5321048A (en) 1976-08-10 1978-02-27 Nippon Electric Co Constant current density plating device
US4120759A (en) 1976-08-10 1978-10-17 New Nippon Electric Company, Ltd. Constant current density plating method
CH629542A5 (de) 1976-09-01 1982-04-30 Inoue Japax Res Verfahren und vorrichtung zur galvanischen materialablagerung.
CH617508A5 (enExample) 1976-12-24 1980-05-30 Eric Robert
US4326940A (en) 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4315059A (en) 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4405416A (en) 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4396467A (en) 1980-10-27 1983-08-02 General Electric Company Periodic reverse current pulsing to form uniformly sized feed through conductors
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
DE3272891D1 (en) 1981-10-01 1986-10-02 Emi Ltd Electroplating arrangements
US4489740A (en) 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4428815A (en) 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4789445A (en) 1983-05-16 1988-12-06 Asarco Incorporated Method for the electrodeposition of metals
US4510176A (en) 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
US4519846A (en) 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
AU602673B2 (en) 1985-12-24 1990-10-25 Gould Electronics Inc Electroplating metal foil
US4693805A (en) 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4869971A (en) 1986-05-22 1989-09-26 Nee Chin Cheng Multilayer pulsed-current electrodeposition process
US4732785A (en) 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US4891106A (en) 1987-08-18 1990-01-02 Hughes Aircraft Company Method of forming nonmagnetic silver electrodes on quartz glass
US5230743A (en) 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
US5235995A (en) 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5092975A (en) 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5316974A (en) 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
US5039381A (en) 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5055425A (en) 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5162260A (en) 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
CA2038615C (en) 1990-03-23 1995-12-12 Masamichi Akatsu Poly (phenylene sulfide) fibers and production process thereof
US5222310A (en) 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5259407A (en) 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5252807A (en) 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5368711A (en) 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
US5256274A (en) 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
JP2524436B2 (ja) 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面処理方法
EP0496605B1 (en) 1991-01-24 2001-08-01 Wako Pure Chemical Industries Ltd Surface treating solutions for semiconductors
JP2525521B2 (ja) 1991-06-25 1996-08-21 日本リーロナール株式会社 無電解スズ―鉛合金めっき浴
JPH0544075A (ja) 1991-08-15 1993-02-23 Nippon Riironaale Kk 無電解銅めつき代替銅ストライクめつき方法
JP3200468B2 (ja) 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用めっき装置
JP2654314B2 (ja) 1992-06-04 1997-09-17 東京応化工業株式会社 裏面洗浄装置
JPH08501827A (ja) 1992-09-15 1996-02-27 エイティアール ワイアー アンド ケーブル カンパニー，インコーポレイテッド 銅の電解メッキ方法及び装置
US5328589A (en) 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5384640A (en) 1993-01-19 1995-01-24 Gaztech International Corporation Gas sample chamber for use with a source of coherent radiation
US5608943A (en) 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5625170A (en) 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
US5885469B1 (en) 1996-11-05 2000-08-08 Applied Materials Inc Topographical structure of an electrostatic chuck and method of fabricating same
JP3377849B2 (ja) 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用メッキ装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5705223A (en) 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5670034A (en) 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US6203582B1 (en) 1996-07-15 2001-03-20 Semitool, Inc. Modular semiconductor workpiece processing tool
US5838121A (en) 1996-11-18 1998-11-17 Applied Materials, Inc. Dual blade robot
JP3255866B2 (ja) 1997-01-30 2002-02-12 カゴメ株式会社 食品材料の連続煎炒装置
US6174425B1 (en) 1997-05-14 2001-01-16 Motorola, Inc. Process for depositing a layer of material over a substrate
JPH1180989A (ja) 1997-09-02 1999-03-26 Oki Electric Ind Co Ltd メッキ装置
US6024856A (en) 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
JP3423631B2 (ja) 1998-02-05 2003-07-07 キヤノン株式会社 酸化亜鉛薄膜の形成方法、それを用いた半導体素子基板の製造方法及び光起電力素子の製造方法
KR100474746B1 (ko) 1998-02-12 2005-03-08 에이씨엠 리서치, 인코포레이티드 도금 장치 및 방법
TWI223678B (en) 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
JP2002506488A (ja) 1998-04-21 2002-02-26 アプライド マテリアルズ インコーポレイテッド 電気化学堆積システム及び基体の電気めっき方法
US6071388A (en) 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6074544A (en) 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6210555B1 (en) 1999-01-29 2001-04-03 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
US6319384B1 (en) 1998-10-14 2001-11-20 Faraday Technology Marketing Group, Llc Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
BR9906873A (pt) 1998-10-14 2002-01-02 Faraday Technology Inc Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados
US6203684B1 (en) 1998-10-14 2001-03-20 Faraday Technology Marketing Group, Llc Pulse reverse electrodeposition for metallization and planarization of a semiconductor substrates
US6793796B2 (en) 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US6254760B1 (en) 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6267853B1 (en) 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6340633B1 (en) 1999-03-26 2002-01-22 Advanced Micro Devices, Inc. Method for ramped current density plating of semiconductor vias and trenches
US6551488B1 (en) 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6551484B2 (en) 1999-04-08 2003-04-22 Applied Materials, Inc. Reverse voltage bias for electro-chemical plating system and method
US6261733B1 (en) 1999-05-10 2001-07-17 Agfa-Gevaert Silver salt diffusion transfer material sensitized for blue light
US6432832B1 (en) 1999-06-30 2002-08-13 Lam Research Corporation Method of improving the profile angle between narrow and wide features
US6224737B1 (en) 1999-08-19 2001-05-01 Taiwan Semiconductor Manufacturing Company Method for improvement of gap filling capability of electrochemical deposition of copper
US6399479B1 (en) 1999-08-30 2002-06-04 Applied Materials, Inc. Processes to improve electroplating fill
US6395101B1 (en) 1999-10-08 2002-05-28 Semitool, Inc. Single semiconductor wafer processor
US6423636B1 (en) * 1999-11-19 2002-07-23 Applied Materials, Inc. Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
US6409903B1 (en) 1999-12-21 2002-06-25 International Business Machines Corporation Multi-step potentiostatic/galvanostatic plating control
US6227263B1 (en) 2000-02-04 2001-05-08 Terry Kust Fluid diverting assembly
US6913680B1 (en) 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
US6440291B1 (en) 2000-11-30 2002-08-27 Novellus Systems, Inc. Controlled induction by use of power supply trigger in electrochemical processing
US6432821B1 (en) 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating

Also Published As

Publication number Publication date
WO2001090446A3 (en) 2003-06-12
US6808612B2 (en) 2004-10-26
US20020011415A1 (en) 2002-01-31
WO2001090446A2 (en) 2001-11-29
EP1337693A2 (en) 2003-08-27
TW492078B (en) 2002-06-21

Similar Documents

Publication Publication Date Title
US6808612B2 (en) Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
US6399479B1 (en) Processes to improve electroplating fill
US7138014B2 (en) Electroless deposition apparatus
US6824666B2 (en) Electroless deposition method over sub-micron apertures
US6881318B2 (en) Dynamic pulse plating for high aspect ratio features
US6664122B1 (en) Electroless copper deposition method for preparing copper seed layers
US6143155A (en) Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6328871B1 (en) Barrier layer for electroplating processes
US20030143837A1 (en) Method of depositing a catalytic layer
WO1999065072A1 (en) Electrochemical planarization of metal layers using a bipolar electrode assembly
WO2005004234A1 (en) Selective capping of copper wiring
WO1999065071A1 (en) Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly
CN101265606A (zh) 化学电镀沉积装置及形成导电层结构的方法
KR20010014062A (ko) 기판상에 전기도금하는 전기화학적인 증착 시스템 및 방법
WO2007111676A2 (en) Method of direct plating of copper on a substrate structure
EP1132500A2 (en) Method for electrochemical deposition of metal using modulated waveforms
US7169700B2 (en) Metal interconnect features with a doping gradient
JP3939124B2 (ja) 配線形成方法
EP1069212A1 (en) Electrochemical deposition for high aspect ratio structures using electrical pulse modulation
US6746591B2 (en) ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature
US20070141818A1 (en) Method of depositing materials on full face of a wafer
CN108330518A (zh) 用于填充互连结构的方法及设备
US6797144B2 (en) Method for reducing surface defects in an electrodeposition process
WO2003085713A1 (en) Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects
US20060243596A1 (en) Uniform current distribution for ECP loading of wafers

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20080805