JP2004506337A - 金属基板の化学機械平坦化 - Google Patents

金属基板の化学機械平坦化 Download PDF

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Publication number
JP2004506337A
JP2004506337A JP2002519139A JP2002519139A JP2004506337A JP 2004506337 A JP2004506337 A JP 2004506337A JP 2002519139 A JP2002519139 A JP 2002519139A JP 2002519139 A JP2002519139 A JP 2002519139A JP 2004506337 A JP2004506337 A JP 2004506337A
Authority
JP
Japan
Prior art keywords
polishing
wafer
weight
polishing fluid
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002519139A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004506337A5 (enExample
Inventor
マンディゴ，グレン・シー
バーカー，ロス・イー・ザ・セカンド
ラック，クレイグ・ディー
サリバン，イアン・ジー
ゴールドバーグ，ウェンディー・ビー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rodel Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Holdings Inc filed Critical Rodel Holdings Inc
Publication of JP2004506337A publication Critical patent/JP2004506337A/ja
Publication of JP2004506337A5 publication Critical patent/JP2004506337A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2002519139A 2000-08-11 2001-08-09 金属基板の化学機械平坦化 Pending JP2004506337A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22433900P 2000-08-11 2000-08-11
US22746600P 2000-08-24 2000-08-24
PCT/US2001/025038 WO2002014014A2 (en) 2000-08-11 2001-08-09 Chemical mechanical planarization of metal substrates

Publications (2)

Publication Number Publication Date
JP2004506337A true JP2004506337A (ja) 2004-02-26
JP2004506337A5 JP2004506337A5 (enExample) 2005-03-17

Family

ID=26918631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002519139A Pending JP2004506337A (ja) 2000-08-11 2001-08-09 金属基板の化学機械平坦化

Country Status (6)

Country Link
US (1) US6602436B2 (enExample)
EP (1) EP1307319A2 (enExample)
JP (1) JP2004506337A (enExample)
KR (1) KR20030020977A (enExample)
TW (1) TW516119B (enExample)
WO (1) WO2002014014A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128689A (ja) * 2004-10-26 2006-05-18 Samsung Corning Co Ltd 化学的機械的平坦化用の水性スラリー組成物

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7516536B2 (en) * 1999-07-08 2009-04-14 Toho Engineering Kabushiki Kaisha Method of producing polishing pad
US6869343B2 (en) * 2001-12-19 2005-03-22 Toho Engineering Kabushiki Kaisha Turning tool for grooving polishing pad, apparatus and method of producing polishing pad using the tool, and polishing pad produced by using the tool
US6790768B2 (en) 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
TW561541B (en) * 2001-10-09 2003-11-11 Hitachi Chemical Co Ltd Polishing pad for CMP, method for polishing substrate using it and method for producing polishing pad for CMP
JP3934388B2 (ja) * 2001-10-18 2007-06-20 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
CN1311009C (zh) * 2001-11-15 2007-04-18 三星电子株式会社 添加剂组合物、含有该添加剂组合物的淤浆组合物及使用该淤浆组合物抛光物体的方法
US6806193B2 (en) * 2003-01-15 2004-10-19 Texas Instruments Incorporated CMP in-situ conditioning with pad and retaining ring clean
US6843708B2 (en) * 2003-03-20 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of reducing defectivity during chemical mechanical planarization
US6843709B1 (en) 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for reducing slurry reflux
US20050164603A1 (en) * 2004-01-22 2005-07-28 House Colby J. Pivotable slurry arm
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
EP1994112B1 (en) * 2006-01-25 2018-09-19 LG Chem, Ltd. Cmp slurry and method for polishing semiconductor wafer using the same
JP2009033038A (ja) * 2007-07-30 2009-02-12 Elpida Memory Inc Ｃｍｐ装置及びｃｍｐによるウェハー研磨方法
US20100130013A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Slurry composition for gst phase change memory materials polishing
JP5407748B2 (ja) * 2009-10-26 2014-02-05 株式会社Ｓｕｍｃｏ 半導体ウェーハの研磨方法
TWI664280B (zh) * 2016-10-11 2019-07-01 Fujifilm Electronic Materials U.S.A., Inc. 高溫cmp組成物及用於使用其之方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
WO1996025270A1 (en) 1995-02-15 1996-08-22 Advanced Micro Devices, Inc. Abrasive-free selective chemo-mechanical polish for tungsten
JP3076244B2 (ja) * 1996-06-04 2000-08-14 日本電気株式会社 多層配線の研磨方法
US5637031A (en) * 1996-06-07 1997-06-10 Industrial Technology Research Institute Electrochemical simulator for chemical-mechanical polishing (CMP)
US5652177A (en) 1996-08-22 1997-07-29 Chartered Semiconductor Manufacturing Pte Ltd Method for fabricating a planar field oxide region
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US6022268A (en) 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
TW375556B (en) 1997-07-02 1999-12-01 Matsushita Electric Industrial Co Ltd Method of polishing the wafer and finishing the polishing pad
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
WO2000037217A1 (en) 1998-12-21 2000-06-29 Lam Research Corporation Method for cleaning an abrasive surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128689A (ja) * 2004-10-26 2006-05-18 Samsung Corning Co Ltd 化学的機械的平坦化用の水性スラリー組成物

Also Published As

Publication number Publication date
TW516119B (en) 2003-01-01
WO2002014014A3 (en) 2002-05-02
EP1307319A2 (en) 2003-05-07
KR20030020977A (ko) 2003-03-10
US20020058426A1 (en) 2002-05-16
WO2002014014A2 (en) 2002-02-21
US6602436B2 (en) 2003-08-05

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