JP2004502307A5 - - Google Patents

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Publication number
JP2004502307A5
JP2004502307A5 JP2002505694A JP2002505694A JP2004502307A5 JP 2004502307 A5 JP2004502307 A5 JP 2004502307A5 JP 2002505694 A JP2002505694 A JP 2002505694A JP 2002505694 A JP2002505694 A JP 2002505694A JP 2004502307 A5 JP2004502307 A5 JP 2004502307A5
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JP
Japan
Prior art keywords
conductive layer
photoelectric
current flowing
semiconductor
photoelectric element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002505694A
Other languages
English (en)
Japanese (ja)
Other versions
JP4928046B2 (ja
JP2004502307A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2001/007091 external-priority patent/WO2002001649A1/en
Publication of JP2004502307A publication Critical patent/JP2004502307A/ja
Publication of JP2004502307A5 publication Critical patent/JP2004502307A5/ja
Application granted granted Critical
Publication of JP4928046B2 publication Critical patent/JP4928046B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002505694A 2000-06-29 2001-06-22 光電素子 Expired - Lifetime JP4928046B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00202263.0 2000-06-29
EP00202263 2000-06-29
PCT/EP2001/007091 WO2002001649A1 (en) 2000-06-29 2001-06-22 Optoelectric element

Publications (3)

Publication Number Publication Date
JP2004502307A JP2004502307A (ja) 2004-01-22
JP2004502307A5 true JP2004502307A5 (enExample) 2012-01-19
JP4928046B2 JP4928046B2 (ja) 2012-05-09

Family

ID=8171713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002505694A Expired - Lifetime JP4928046B2 (ja) 2000-06-29 2001-06-22 光電素子

Country Status (8)

Country Link
US (1) US6686581B2 (enExample)
EP (1) EP1228540B1 (enExample)
JP (1) JP4928046B2 (enExample)
KR (1) KR100869866B1 (enExample)
CN (1) CN1263168C (enExample)
DE (1) DE60143152D1 (enExample)
TW (1) TW511302B (enExample)
WO (1) WO2002001649A1 (enExample)

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CN1653297B (zh) * 2002-05-08 2010-09-29 佛森技术公司 高效固态光源及其使用和制造方法
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US6864110B2 (en) * 2002-10-22 2005-03-08 Agilent Technologies, Inc. Electrophoretic processes for the selective deposition of materials on a semiconducting device
US20070075941A1 (en) * 2003-10-08 2007-04-05 Koninklijke Philips Electronics N.V. Electrowetting display device
WO2005041632A2 (en) * 2003-10-31 2005-05-12 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
WO2005043954A2 (en) * 2003-10-31 2005-05-12 Phoseon Technology, Inc. Series wiring of highly reliable light sources
DE202005002110U1 (de) * 2004-02-19 2005-05-04 Hong-Yuan Technology Co., Ltd., Yonghe Lichtemittierende Vorrichtung
EP1735844B1 (en) 2004-03-18 2019-06-19 Phoseon Technology, Inc. Use of a high-density light emitting diode array comprising micro-reflectors for curing applications
EP1754259B1 (en) 2004-03-18 2019-07-17 Phoseon Technology, Inc. Direct and indirect cooling of leds
US7816638B2 (en) * 2004-03-30 2010-10-19 Phoseon Technology, Inc. LED array having array-based LED detectors
ATE503963T1 (de) * 2004-04-12 2011-04-15 Phoseon Technology Inc Hochdichtes led-array
WO2005100961A2 (en) * 2004-04-19 2005-10-27 Phoseon Technology, Inc. Imaging semiconductor strucutures using solid state illumination
KR101288758B1 (ko) * 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 산업 공정에서 광원을 사용하는 시스템 및 방법
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US7642527B2 (en) * 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
US8062925B2 (en) * 2006-05-16 2011-11-22 Koninklijke Philips Electronics N.V. Process for preparing a semiconductor light-emitting device for mounting
EP2122709B1 (en) * 2007-02-12 2010-09-22 Philips Intellectual Property & Standards GmbH Large area light emitting diode light source
KR100967952B1 (ko) * 2008-01-10 2010-07-06 (주)삼우아이엠씨 도로포장의 덧씌우기 공법
KR100973238B1 (ko) 2008-03-26 2010-07-30 서울반도체 주식회사 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는ｌｅｄ
JP5657012B2 (ja) 2010-02-25 2015-01-21 ライタイザー コリア カンパニー リミテッド 発光ダイオード及びその製造方法
US9062847B2 (en) * 2011-04-13 2015-06-23 Osram Gmbh Method for manufacturing a phospor device and lighting apparatus comprising such phosphor device
DE102013109031B4 (de) * 2013-08-21 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102015106635A1 (de) * 2015-04-29 2016-11-03 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
WO2017023440A1 (en) 2015-08-05 2017-02-09 Proteq Technologies Llc Light-emitting device

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JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
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